CN108152998A - A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit - Google Patents
A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit Download PDFInfo
- Publication number
- CN108152998A CN108152998A CN201711422479.8A CN201711422479A CN108152998A CN 108152998 A CN108152998 A CN 108152998A CN 201711422479 A CN201711422479 A CN 201711422479A CN 108152998 A CN108152998 A CN 108152998A
- Authority
- CN
- China
- Prior art keywords
- black phosphorus
- absorptive unit
- multistage
- electrode
- optical attenuator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0081—Electric or magnetic properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
- G02F1/0123—Circuits for the control or stabilisation of the bias voltage, e.g. automatic bias control [ABC] feedback loops
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
Abstract
The invention discloses a kind of adjustable optical attenuators based on multistage black phosphorus absorptive unit, are related to optical attenuator field；It includes signal end and multistage is placed equidistant with the black phosphorus absorptive unit on signal end, and the signal end includes silicon substrate, the dielectric layer being arranged in silicon substrate and the slab waveguide being arranged in the middle part of signal end, and the slab waveguide is arranged on above dielectric layer；The present invention solve existing adjustable optical attenuator because the modification scope of absorptive unit influenced by its saturated characteristic, cause modification scope narrow the problem of, achieved the effect that widen modification scope.
Description
Technical field
The invention belongs to optical attenuator fields, and in particular to a kind of variable optical attenuation based on multistage black phosphorus absorptive unit
Device.
Background technology
Black phosphorus is a kind of two-dimentional new material similar with graphene, in necks such as integrated optics field, signal detection, sensings
Domain has good application prospect；Different layers of black phosphorus have very strong absorption characteristic, while black phosphorus to the light of different-waveband
Absorption characteristic can be changed by applied voltage, realize different degrees of light absorption.
In integrated optics, due to characteristics such as generality and the CMOS technology compatibilities of silicon materials, it is adjustable to make silica-based waveguides
Humorous optical attenuator is an important research direction, if can be by tunable silica-based waveguides optical attenuator and laser light source, light
The devices such as detection integrate on the same substrate, so that it may realize light intensity tunable light source, light signal intensity detection, detector protection etc.
Critical function.Using silicon substrate integrated waveguide, the mode that black phosphorus is laid in waveguide surface realizes tunable, fast response time of decaying,
There are good integration and stability；Traditional tunable optical attenuation majority is to realize optical attenuation using the method for mechanical, hand-driven
Tuning, this Tuning mechanism may be only available for large-sized experiment porch and use, is not easy to minimize, integrated and intelligent
Change；Traditional absorption adjustable attenuator based on black phosphorus changes attenuation degree by adjusting bias voltage, due to absorbing material
Semiconductor absorber characteristic, after bias voltage is added to a certain degree, absorption intensity will not change again, have so as to modification scope
Limit.So a kind of optical attenuator is needed to realize the connection of multistage absorption unit, increase modification scope and control accuracy.
Invention content
Present invention aims at：The present invention provides a kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit, solutions
Existing adjustable optical attenuator determined because the modification scope of absorptive unit is influenced by its saturated characteristic, has caused modification scope is narrow to ask
Topic.
In order to solve the above technical problems, the technical solution adopted in the present invention is：
A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit, is placed equidistant with including signal end and multistage in signal
Black phosphorus absorptive unit on end, the signal end include silicon substrate, the dielectric layer being arranged in silicon substrate and are arranged in the middle part of signal end
Slab waveguide, the slab waveguide is arranged on above dielectric layer.
Preferably, the black phosphorus absorptive unit include first electrode, second electrode, first layer black phosphorus, second layer black phosphorus and
Spacer medium, the first electrode and second electrode are separately positioned on black phosphorus absorptive unit both ends, and the slab waveguide is located at institute
The middle part between first electrode and second electrode is stated, it is black to be equipped with first layer between the first electrode bottom and slab waveguide
Phosphorus, the slab waveguide top of first layer black phosphorus is provided with spacer medium, between the spacer medium upper end and second electrode bottom
It is equipped with second layer black phosphorus；Convenient for cascading multiple black phosphorus absorptive units, modification scope is widened；
Preferably, the slab waveguide includes silicon.Using silicon as waveguide material, refractive index is big, and light field binding effect is more preferable, together
When can reduce device size；
Preferably, the dielectric layer includes silica；
Preferably, the spacer medium includes Si oxide and silicon nitrogen oxides.Strengthen the stabilization combined with black phosphorus material
Property, while ensure the higher carrier mobility of black phosphorus, improve the response speed of device work；
Preferably, the multistage black phosphorus absorptive unit switchs control by multiple gate circuits and connects a of black phosphorus absorptive unit
Number；Convenient for connecting different absorptive units, regulation and control attenuation range is realized.
Compared with prior art, the invention has the advantages that：
1. the present invention is connected using multiple black phosphorus absorptive units, pass through the absorption list of gate circuit switch connection difference number
Member achievees the purpose that output light decrement can be tuned on a large scale, avoids existing adjusting bias voltage and adds to a certain degree, inhales
Receive material absorption intensity reach capacity the modification scope brought it is narrow the shortcomings that；It is single because absorbing to solve existing adjustable optical attenuator
The problem of modification scope of member is influenced by its saturated characteristic, causes modification scope narrow, has widened modification scope；
2. the present invention is using multiple black phosphorus absorptive units are cascaded, each absorptive unit up regulation range is by its absorbing material
Limitation, multiple cascades, broadening attenuation modification scope reduce limitation, are unique methods effective and feasible at present；Pass through grade
Join multiple absorptive units and realize attenuation coarse adjustment control, control bias realizes fine tuning control, improves and adjusts while realizing broadening modification scope
Control precision；
3. the silica-based waveguides structure that the present invention uses has compatibility well with CMOS technology, easy to process and integrated,
Cause more compact structure；Using black phosphorus as absorbing material, absorption efficiency is high, is substantially reduced device size, improves its performance
Stability；
4. the present invention, as spacer medium, strengthens the stabilization combined with black phosphorus material using Si oxide and silicon nitrogen oxides
Property, while ensure the higher carrier mobility of black phosphorus, improve the response speed of device work；Simultaneously using silicon as waveguide material,
Refractive index is big, and light field binding effect is more preferable, while can reduce device size, improves the stability of its performance.
Description of the drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein：
Fig. 1 is the cascade structure schematic diagram of the present invention；
Fig. 2 is the schematic cross-section of the single black phosphorus absorptive unit of the present invention；
Fig. 3 is the structure diagram of the single black phosphorus absorptive unit of the present invention；
Fig. 4 is that the cascade-connected attenuator of the present invention accesses the attenuation data figure in the case of different absorptive units；
It is marked in figure：1- first electrodes, 2- first layer black phosphorus, 3- spacer mediums, 4- second layer black phosphorus, 5- slab waveguides,
6- dielectric layers, 7- silicon substrates, 8- second electrodes, 9- black phosphorus absorptive units.
Specific embodiment
All features or disclosed all methods disclosed in this specification or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
It elaborates with reference to Fig. 1-4 couples of present invention.
A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit, is placed equidistant with including signal end and multistage in signal
Black phosphorus absorptive unit 9 on end, signal end include silicon substrate 7, the dielectric layer 6 being arranged in silicon substrate 7 and are arranged in the middle part of signal end
Slab waveguide 5, slab waveguide 5 is arranged on the top of dielectric layer 6.
Black phosphorus absorptive unit 9 includes first electrode 1, second electrode 8, first layer black phosphorus 2, second layer black phosphorus 4 and isolation and is situated between
Matter 3, first electrode 1 and second electrode 8 are separately positioned on 9 both ends of black phosphorus absorptive unit, and slab waveguide 5 is located at 1 He of first electrode
Middle part between second electrode 8 is equipped with first layer black phosphorus 2, first layer black phosphorus 2 between 1 bottom of first electrode and slab waveguide 5
The top of slab waveguide 5 be provided with spacer medium 3, it is black to be equipped with the second layer between 8 bottom of 3 upper end of spacer medium and second electrode
Phosphorus 4；Convenient for cascading multiple black phosphorus absorptive units, modification scope is widened；
Slab waveguide 5 includes silicon.Using silicon as waveguide material, refractive index is big, and light field binding effect is more preferable, while can reduce
Device size；
Dielectric layer 6 includes silica；
Spacer medium 3 includes Si oxide and silicon nitrogen oxides.Strengthen the stability combined with black phosphorus material, ensure simultaneously
The higher carrier mobility of black phosphorus improves the response speed of device work；
Multistage black phosphorus absorptive unit 9 is switched the number of control connection black phosphorus absorptive unit 9 by multiple gate circuits；Convenient for regulation and control
Attenuation range.
Embodiment 1
When operation wavelength is 1.55um, first layer black phosphorus 2,4 thickness of second layer black phosphorus are 1.06nm, and 7 thickness of silicon substrate is
1um, the material of dielectric layer 6 are silica, thickness 0.6um；5 material of slab waveguide is silicon, and end face is the pros of length of side 0.4um
Shape；Both sides are connected with first electrode 1 and second electrode 8, and electrode material is golden, the external bias voltage of two electrodes；Spacer medium 3
Material is silica, thickness 100nm；Single 9 length 1um of black phosphorus absorptive unit, adjacent black phosphorus absorptive unit 9 are spaced 1um,
Ten black phosphorus absorptive units 9 are laid in waveguide in total；Ten black phosphorus absorptive units are completely in open-circuit condition first, at this time device
Part attenuating is most weak；If one of absorptive unit is made to be in access circuit, there is bias at absorptive unit both ends, regulate and control this partially
Variation realizes that absorption coefficient changes in 0~0.182dB/um between being pressed in 0.1V~0.4V, realizes small-scale attenuation regulation and control；
Decay formula is as follows：
I=I0·exp(-α·N·L)
(wherein α is attenuation coefficient, and N is the effective absorptive unit number for accessing circuit, and L is the length of single absorptive unit,
I is output intensity, I0It is input light intensity)；By decay formula it is found that as N=1, the attenuation range regulated and controled by α is very narrow, if
Make multiple absorptive units in running order (having bias), N has a higher value, and attenuating can effectively enhance (as shown in Figure 4),
So as to generally widen attenuation modification scope.
Embodiment 2
When operation wavelength is 0.78um, first layer black phosphorus 2,4 thickness of second layer black phosphorus are 0.53nm；Remaining material thickness is not
Become, corresponded to according to wavelength and change black phosphorus thickness, convenient for ensureing optical attenuation and modification scope.
Embodiment 3
When operation wavelength is 2um, first layer black phosphorus 2,4 thickness of second layer black phosphorus are 1.59nm；Remaining material thickness is constant,
It is corresponded to according to wavelength and changes black phosphorus thickness, convenient for ensureing optical attenuation and modification scope.
Operation principle：Black phosphorus material has certain absorption characteristic to light, and black phosphorus is laid on waveguide core layer surface and guided mode
The field interactions of dying that declines, absorb part light energy, realize guided mode light intensity attenuation；The absorption characteristic of black phosphorus material and black phosphorus
The number of plies is closely related with applying bias, selects the appropriate black phosphorus number of plies that can determine the absorbent core wavelength of black phosphorus, and bias can be
Change black phosphorus carrier concentration to a certain extent, material fermi level is caused to change, so as to change the light absorption energy of black phosphorus
Power realizes different degrees of attenuation；Black phosphorus is related to effective interaction length to the absorption intensity of light, and action length is longer, attenuation
It is stronger, and total effective length of cascade-connected attenuator be equal to effectively make with single absorptive unit in channel status absorptive unit number
With the product of length；The absorptive unit number of circuit is accessed by control, can realize different degrees of attenuation coarse adjustment control, in addition
Bias can be controlled to realize fine tuning control, be finally completed regulatable attenuation.The present invention is connected using multiple black phosphorus absorptive units, is led to
Contactor of moving into one's husband's household upon marriage connects the absorptive unit of different numbers, achievees the purpose that output light decrement can be tuned on a large scale, avoids
Existing adjusting bias voltage adds to a certain degree, and the absorption intensity of absorbing material reaches capacity, and the modification scope that brings is narrow to be lacked
Point；Existing adjustable optical attenuator is solved because the modification scope of absorptive unit is influenced by its saturated characteristic, causes modification scope narrow
The problem of, widen modification scope.
Claims (6)
1. a kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit, it is characterised in that：It is equidistant including signal end and multistage
The black phosphorus absorptive unit (9) being arranged on signal end, the signal end include silicon substrate (7), the dielectric layer being arranged in silicon substrate (7)
(6) it is arranged on above dielectric layer (6) with the slab waveguide (5) that is arranged in the middle part of signal end, the slab waveguide (5).
2. a kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit according to claim 1, it is characterised in that：Institute
State black phosphorus absorptive unit (9) including first electrode (1), second electrode (8), first layer black phosphorus (2), second layer black phosphorus (4) and every
From medium (3), the first electrode (1) and second electrode (8) are separately positioned on black phosphorus absorptive unit (9) both ends, the bar shaped
Middle part of the waveguide (5) between the first electrode (1) and second electrode (8), first electrode (1) bottom and bar shaped wave
It leads and first layer black phosphorus (2) is equipped between (5), spacer medium (3) is provided with above the slab waveguide (5) of first layer black phosphorus (2),
Second layer black phosphorus (4) is equipped between spacer medium (3) upper end and second electrode (8) bottom.
3. a kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit according to claim 2, it is characterised in that：Institute
Slab waveguide (5) is stated including silicon.
4. a kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit according to claim 3, it is characterised in that：Institute
Dielectric layer (6) is stated including silica.
5. a kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit according to claim 4, it is characterised in that：Institute
It states spacer medium (3) and includes Si oxide and silicon nitrogen oxides.
It is 6. special according to a kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit of claim 1-5 any one of them
Sign is：The multistage black phosphorus absorptive unit (9) is switched the number of control connection black phosphorus absorptive unit (9) by multiple gate circuits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711422479.8A CN108152998A (en) | 2017-12-25 | 2017-12-25 | A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711422479.8A CN108152998A (en) | 2017-12-25 | 2017-12-25 | A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108152998A true CN108152998A (en) | 2018-06-12 |
Family
ID=62461960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711422479.8A Pending CN108152998A (en) | 2017-12-25 | 2017-12-25 | A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108152998A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109445132A (en) * | 2018-11-30 | 2019-03-08 | 宁波大学 | A kind of non-volatile tunable directional coupler based on phase-change material |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1614462A (en) * | 2003-11-07 | 2005-05-11 | 日本电气株式会社 | Optical waveguide device, variable optical attenuator, and optical switch |
| CN103972625A (en) * | 2014-05-21 | 2014-08-06 | 西安空间无线电技术研究所 | MIC attenuator applied to DC and ultrahigh frequency |
| CN105022178A (en) * | 2015-08-18 | 2015-11-04 | 电子科技大学 | Graphene phase type light modulator based on planar waveguide |
| CN105737977A (en) * | 2016-04-15 | 2016-07-06 | 博创科技股份有限公司 | Wide-range optical power meter |
| CN105759467A (en) * | 2016-05-23 | 2016-07-13 | 电子科技大学 | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides |
| CN105807454A (en) * | 2016-05-23 | 2016-07-27 | 电子科技大学 | Mid-infrared electro-optical modulator based on black phosphorus fluoride waveguide |
| CN106970475A (en) * | 2016-11-07 | 2017-07-21 | 北京交通大学 | Silicon substrate graphene gate layer electro-optical spatial ultrafast modulation device |
-
2017
- 2017-12-25 CN CN201711422479.8A patent/CN108152998A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1614462A (en) * | 2003-11-07 | 2005-05-11 | 日本电气株式会社 | Optical waveguide device, variable optical attenuator, and optical switch |
| CN103972625A (en) * | 2014-05-21 | 2014-08-06 | 西安空间无线电技术研究所 | MIC attenuator applied to DC and ultrahigh frequency |
| CN105022178A (en) * | 2015-08-18 | 2015-11-04 | 电子科技大学 | Graphene phase type light modulator based on planar waveguide |
| CN105737977A (en) * | 2016-04-15 | 2016-07-06 | 博创科技股份有限公司 | Wide-range optical power meter |
| CN105759467A (en) * | 2016-05-23 | 2016-07-13 | 电子科技大学 | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides |
| CN105807454A (en) * | 2016-05-23 | 2016-07-27 | 电子科技大学 | Mid-infrared electro-optical modulator based on black phosphorus fluoride waveguide |
| CN106970475A (en) * | 2016-11-07 | 2017-07-21 | 北京交通大学 | Silicon substrate graphene gate layer electro-optical spatial ultrafast modulation device |
Non-Patent Citations (2)
| Title |
|---|
| CHARLES LIN ETC.: "Multilayer Black Phosphorus as a Versatile Mid-Infrared Electro-optic Material", 《NANOLETTERS》 * |
| 张芳: "几种新型二维材料的非线性吸收性能研究", 《中国博士学位论文全文数据库工程科技Ⅰ辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109445132A (en) * | 2018-11-30 | 2019-03-08 | 宁波大学 | A kind of non-volatile tunable directional coupler based on phase-change material |
| CN109445132B (en) * | 2018-11-30 | 2023-10-20 | 宁波大学 | Phase-change material-based nonvolatile tunable directional coupler |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Shiramin et al. | Graphene modulators and switches integrated on silicon and silicon nitride waveguide | |
| US9529158B2 (en) | Silicon-based, broadband, waveguide-integrated electro-optical switch | |
| Shi et al. | Field-effect optical modulation based on epsilon-near-zero conductive oxide | |
| US20140023321A1 (en) | Electro-optical waveguide apparatuses and methods thereof | |
| CN102591041B (en) | Integrated type online electro-optic modulator with graphene thin film and D-type optical fiber | |
| Sanchez et al. | Analysis and design optimization of a hybrid VO 2/Silicon2 $\times $2 microring switch | |
| RU2019140603A (en) | FIELD EFFECT ADJUSTABLE ABSORBER WITH NEAR-ZERO DIELECTRIC PERMEABILITY | |
| CN107579328A (en) | A kind of super transparent resonance device of surface electromagnetically induced of E shapes all dielectric | |
| CN105759467A (en) | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides | |
| Jin et al. | Electro-absorption modulator with dual carrier accumulation layers based on epsilon-near-zero ITO | |
| CN108051889A (en) | A kind of slot type waveguide TE mould analyzers for mixing plasma effect auxiliary | |
| CN108152998A (en) | A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit | |
| Yang et al. | Ultracompact plasmonic switch based on graphene-silica metamaterial | |
| CN108732794B (en) | Terahertz switch based on periodic graphene structure absorption characteristics and control method | |
| Wang et al. | Exploring a novel approach to manipulating plasmon-induced transparency | |
| CN105807454A (en) | Mid-infrared electro-optical modulator based on black phosphorus fluoride waveguide | |
| CN109001918A (en) | A kind of low-loss optically waveguide phase shifter based on high mobility TCO thin film | |
| CN108873395A (en) | A kind of unrelated optical modulator of graphene polarization based on mode conversion | |
| CN111458796B (en) | Optical coupler with four-slot waveguide | |
| CN111458795B (en) | Full-band polarizer based on silicon waveguide | |
| Wei et al. | TDFA-band silicon optical variable attenuator | |
| CN107102454A (en) | Unrelated absorption-type electrooptic modulator is polarized based on tin indium oxide optical-fiber type | |
| Han et al. | Low-power and ultrafast all-optical tunable plasmon induced transparency in metal-dielectric-metal waveguide side-coupled Fabry-Perot resonators system | |
| CN115032743A (en) | Multi-mode interference coupler type polarizer based on thin-film lithium niobate | |
| CN110133799B (en) | Waveguide integrated polarized light coupler based on graphene and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180612 |