CN103972625A - MIC attenuator applied to DC and ultrahigh frequency - Google Patents
MIC attenuator applied to DC and ultrahigh frequency Download PDFInfo
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- CN103972625A CN103972625A CN201410217006.4A CN201410217006A CN103972625A CN 103972625 A CN103972625 A CN 103972625A CN 201410217006 A CN201410217006 A CN 201410217006A CN 103972625 A CN103972625 A CN 103972625A
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Abstract
The invention relates to an MIC attenuator applied to DC and ultrahigh frequency. The MIC attenuator applied to DC and ultrahigh frequency is characterized by comprising a grounding structure, a film resistor network structure and characteristic impedance matching microstrip lines, the film resistor network structure comprises two direct-connection resistors R and two resistors R1to ground; the grounding structure is a quarter quasi sector open-circuit microstrip line; one ends of the two direct-connection resistors R are connected with one ends of the resistors R1 to ground to form the film resistor network structure of a criss-cross mirror structure, the other ends of the two direct-connection resistors R are connected with the impedance matching microstrip lines at the microwave signal input end and the microwave signal output end, and the other ends of the two resistors to ground are respectively connected with the grounding structure. According to the MIC attenuator for applying DC to ultrahigh frequency, broadband microwave signal energy can be evenly absorbed, the attenuation values of microwave signals of all frequencies in operation bandwidth are the same, meanwhile, any-frequency reflection signals in the bandwidth can be reduced to an extremely low level, and good matching is achieved.
Description
Technical field
The present invention relates to one and be applied to MIC (Microwave IntergratedCirciut) attenuator of DC (low frequency) to superfrequency, belong to microwave device design field.
Background technology
MIC attenuator is microwave link gain allotment and improves cascade module voltage standing wave ratio means very flexibly and effectively, in microwave current overall design, is widely adopted.
Tradition MIC attenuator, so owing to existing microstrip transition line need to mate design between the composition straight-through resistance of attenuator and resistance to earth, frequency bandwidth and the band internal characteristic of attenuator are restricted, taking 3dB attenuator as example: the narrower absolute bandwidth 24GHz of frequency range (4.4 to 28.8GHz), amplitude flatness 1.15dB in band, and the larger 3mm × 5.5mm of size.Simultaneously, composition attenuator resistance to earth pass through punching form ground connection, and punching need to meet microwave unit MIC sheet design technology and require to punch nearby, must meet bore edges apart from resistance 0.5mm required distance, directly cause amplitude-frequency characteristic variation in attenuator band, and frequency is higher, the larger amplitude-frequency characteristic of attenuation is poorer, affects high-frequency wideband microwave unit and use.Cannot realize machine debugging stage microwave bypass functionality, flexibility is poor.
Summary of the invention
To the effect that of the present invention: to overcome the deficiencies in the prior art, the MIC attenuator of a kind of DC of being applied to superfrequency proposed, the right-angled intersection mirror image being directly connected to form by straight-through resistance and resistance to earth has realized small size, ultra broadband characteristic, resistance to earth ground connection is carried out ground connection by sector open-circuit line simultaneously, the impact of the parasitic parameter that minimizing ground hole is far introduced apart from resistance, has expanded working band.
Technical solution of the present invention is:
Being applied to DC comprises to the MIC attenuator of superfrequency: ground structure, film resistor network structure, a characteristic impedance coupling microstrip line, and wherein film resistor network structure comprises again two straight-through resistance R, two resistance to earth R1;
One end of one end of two straight-through resistance R and two resistance to earth R1 links together and forms the enantiomorphous film resistor network structure of right-angled intersection, the other end of two straight-through resistance R is connected with the impedance matching microstrip line of microwave signal input and microwave signal output respectively, and the other end of two resistance to earth is connected with ground structure respectively.
Described two ground structures are identical, are all the accurate sector open-circuit microstrip lines of quarter-wave, and accurate sector open-circuit microstrip line is made up of trapezoidal microstrip line and rectangle microstrip line, and the parallel broadside of trapezoidal microstrip line equates and is connected with rectangle microstrip line width edge length.
Accurate fan-shaped offset of microstrip line electrical length in described ground structure is 1/4th of bandwidth of operation centre frequency corresponding wavelength.
The straight-through resistance R resistance of described film resistor network structure two is identical, is film resistor; Described two earth resistance R1 resistances are identical, are film resistor.
The width of described straight-through resistance R is identical with characteristic impedance coupling micro belt line width.
The width of described resistance to earth R1 is identical with the trapezoidal microstrip line parallel narrow hem width degree in accurate sector open-circuit microstrip line.
Described characteristic impedance coupling microstrip line is 50 Europe.
Described film resistor network is realized microwave short circuit after connecting by the width gold ribbon pressure weldings such as microstrip line employing that two straight-through resistance are connected.
The present invention's advantage is compared with prior art:
(1) between the composition resistance with respect to traditional MIC attenuator, all there is the microstrip transmission line segment that uses frequency range to mate for difference, the present invention adopts the symmetrical topological form of right-angled intersection mirror image, reduce size and realize ultra broadband characteristic, for different frequency range matching section, size is little, and bandwidth can cover DC frequency range to EHF frequency range microwave product, can be used as preferred circuit directly applies, applicability is strong, and cost is low, and engineering using value is high.
(2) the present invention changes traditional MIC attenuator and directly expands the mode of working band by punching ground connection, the present invention by resistance to earth ground connection by gradual change λ/4 open-circuit line ground connection, eliminate the too much parasitic parameter impact of introducing due to punching ground connection, by length and the end width of reasonable adjustment gradual change λ/4 open-circuit line, realize the even absorption to broadband microwave signal energy, the reflected signal of optional frequency in bandwidth can be down to extremely low-level simultaneously, eliminate more high band self-excitation, thereby reach good Broadband Matching effect, the present invention is simultaneously without punching ground connection, simplify production procedure, reduce production link, thereby cost squeeze, and raising reliability, meanwhile, can not introduce some unnecessary ghost effects, thereby make to be with interior amplitude-frequency characteristic improving.
(3) the present invention can combine by multistage differential declines magnitude connection, thereby realizes the gain-adjusted of certain limit, makes complete machine gain-adjusted simple and flexible; Film resistor network of the present invention is realized microwave short circuit after connecting by the width gold ribbon pressure weldings such as microstrip line employing that two straight-through resistance are connected simultaneously, regulates so multistage attenuator of the present invention can be realized attenuation after connecting flexibly.
(4) the present invention, with respect to traditional chip attenuator, realizes slitless connection without sealing and being easier to other circuit of MIC, improves reliability, reduces costs; Meanwhile, the present invention adopts the most basic film resistor in realization, and form is simple, and technical maturity, well Realization of Product, and ultra broadband compact nature of the present invention has general usability.
Brief description of the drawings
Fig. 1 is microwave circuit structural representation of the present invention;
Fig. 2 be traditional π type micro-with film decreaser reflection loss and the insertion loss figure at 1-25GHz;
Fig. 3 is reflection loss and the insertion loss figure of the present invention at 2-50GHz attenuation 4dB.
Fig. 4 is reflection loss and the insertion loss figure of the present invention at 2-50GHz attenuation 2dB.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
As shown in Figure 1, a kind of DC of being applied to comprises to the MIC attenuator of superfrequency: ground structure, film resistor network structure, 50 ohm characteristic impedance coupling microstrip line Z
0, wherein film resistor network structure comprises again two straight-through resistance R, two resistance to earth R1;
One end of one end of two straight-through resistance R and two resistance to earth R1 links together and forms the enantiomorphous film resistor network structure of right-angled intersection, the other end of two straight-through resistance R is connected with the impedance matching microstrip line of microwave signal input and microwave signal output respectively, and the other end of two resistance to earth is connected with ground structure respectively.
Two ground structures are identical, are all the accurate sector open-circuit microstrip lines of quarter-wave, and accurate sector open-circuit microstrip line is made up of trapezoidal microstrip line and rectangle microstrip line, and the parallel broadside of trapezoidal microstrip line equates and is connected with rectangle microstrip line width edge length.
Accurate fan-shaped offset of microstrip line electrical length in ground structure is 1/4th of bandwidth of operation centre frequency corresponding wavelength.
The straight-through resistance R resistance of film resistor network structure two is identical, is film resistor; Described two earth resistance R1 resistances are identical, are film resistor.
The width of straight-through resistance R is identical with characteristic impedance coupling micro belt line width.
The width of resistance to earth R1 is identical with the trapezoidal microstrip line parallel narrow hem width degree in accurate sector open-circuit microstrip line.
Characteristic impedance coupling microstrip line is 50 Europe.
Film resistor network is realized microwave short circuit after connecting by the width gold ribbon pressure weldings such as microstrip line employing that two straight-through resistance are connected.
The accurate sector open-circuit microstrip line electrical length of ultra broadband ground structure is the corresponding quarter-wave of bandwidth of operation centre frequency, is equivalent to short circuit from the narrow limit that is connected with resistance to earth, and circuit is simplified.
Interconnection film resistor network resistance R and R1 can be calculated by following methods:
Suppose that circuit input/output port coupling return loss equals zero, input/output port impedance Z
0(being generally 50 ohm).Straight-through resistance R output obtains load impedance Z
l=Z
0, input leads directly to resistance input port impedance Z in=Z0, can wait until the formula of resistance R and R1.
Suppose the pad value S of attenuator
21for known, resistance R and R1 can solve by following formula:
Further illustrate structure composition of the present invention with a specific embodiment below, suppose the pad value S of attenuator
21=4dB, in this enforcement attenuator be suitable for the 4dB attenuator that frequency is 4.5-50GHz, its R resistance is 13.35 ohm, R1 resistance is 285.7 ohm, size is about 2.24mm × 4.5mm, be all better than-20dB of its return loss, result is as shown in Figure 3.With the traditional microstrip attenuator contrast shown in accompanying drawing 2, bandwidth is extended to 44.5GHz by 17GHz, in band return loss by-15dB be optimized to-more than 20dB, inband flatness is improved to about 0.14dB by the about 1.8dB that originally tilted, size reduces 52% on 3.5mm × 6mm basis.
Another specific embodiment further illustrates structure composition of the present invention, suppose the pad value S21=2dB of attenuator, the 2dB attenuator that in this enforcement, the frequency of utilization of attenuator is 2.0-50GHz, its R resistance is 11.31 ohm, R1 resistance is 209.66 ohm, size is about 2.0mm × 4.5mm, be all better than-20dB of its return loss, and result is as shown in Figure 4.Compared with traditional microstrip attenuator, bandwidth is extended to 48GHz by 17GHz, in band, return loss is by-be optimized to-20dB of 15dB, and inband flatness is improved to about 0.54dB by the about 1.6dB that originally tilted, and size reduces 57% on 3.5mm × 6mm basis.
Can find out, the present invention, compared with conventional films resistance attenuator, has widened applying frequency, has improved band standing internal wave, has solved pad value along with frequency ramps, and directly applies without design iterations, and technique realizes and is easy to advantage.
The content not being described in detail in specification of the present invention belongs to those skilled in the art's known technology.
Claims (8)
1. be applied to the MIC attenuator of DC to superfrequency, it is characterized in that comprising: ground structure, film resistor network structure, characteristic impedance coupling microstrip line, wherein film resistor network structure comprises again two straight-through resistance R, two resistance to earth R1;
One end of one end of two straight-through resistance R and two resistance to earth R1 links together and forms the enantiomorphous film resistor network structure of right-angled intersection, the other end of two straight-through resistance R is connected with the impedance matching microstrip line of microwave signal input and microwave signal output respectively, and the other end of two resistance to earth is connected with ground structure respectively.
2. according to a kind of MIC attenuator of DC to superfrequency that be applied to described in right 1, it is characterized in that: described two ground structures are identical, all the accurate sector open-circuit microstrip lines of quarter-wave, accurate sector open-circuit microstrip line is made up of trapezoidal microstrip line and rectangle microstrip line, and the parallel broadside of trapezoidal microstrip line equates and is connected with rectangle microstrip line width edge length.
3. according to a kind of MIC attenuator of DC to superfrequency that be applied to described in right 1, it is characterized in that: the accurate fan-shaped offset of microstrip line electrical length in described ground structure is 1/4th of bandwidth of operation centre frequency corresponding wavelength.
4. according to a kind of MIC attenuator of DC to superfrequency that be applied to described in right 1, it is characterized in that: the straight-through resistance R resistance of described film resistor network structure two is identical, is film resistor; Described two earth resistance R1 resistances are identical, are film resistor.
5. according to a kind of MIC attenuator of DC to superfrequency that be applied to described in right 1, it is characterized in that: the width of described straight-through resistance R is identical with characteristic impedance coupling micro belt line width.
6. according to a kind of MIC attenuator of DC to superfrequency that be applied to described in right 1, it is characterized in that: the width of described resistance to earth R1 is identical with the trapezoidal microstrip line parallel narrow hem width degree in accurate sector open-circuit microstrip line.
7. according to a kind of MIC attenuator of DC to superfrequency that be applied to described in right 1, it is characterized in that: described characteristic impedance coupling microstrip line is 50 Europe.
8. according to a kind of MIC attenuator of DC to superfrequency that be applied to described in right 1, it is characterized in that: described film resistor network is realized microwave short circuit after connecting by the width gold ribbon pressure weldings such as microstrip line employing that two straight-through resistance are connected.
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| CN201410217006.4A CN103972625B (en) | 2014-05-21 | 2014-05-21 | A kind of it is applied to the low frequency MIC attenuator to superfrequency |
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| CN201410217006.4A CN103972625B (en) | 2014-05-21 | 2014-05-21 | A kind of it is applied to the low frequency MIC attenuator to superfrequency |
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| CN103972625B CN103972625B (en) | 2016-06-29 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242826A (en) * | 2014-09-05 | 2014-12-24 | 中国科学院微电子研究所 | Frequency mixer and wireless radio receiving and transmitting system |
| CN105227148A (en) * | 2015-09-28 | 2016-01-06 | 香港城市大学深圳研究院 | For the broadband matching network of power amplifier and construction method and power amplifier |
| CN105510648A (en) * | 2016-01-14 | 2016-04-20 | 中国电子科技集团公司第十三研究所 | High-isolation microwave test fixture for ultrahigh-power GaN microwave devices |
| CN107947754A (en) * | 2017-11-23 | 2018-04-20 | 中国电子科技集团公司第四十研究所 | A kind of Wide band high performance attenuator circuit |
| CN108152998A (en) * | 2017-12-25 | 2018-06-12 | 电子科技大学 | A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit |
| CN112886943A (en) * | 2021-01-27 | 2021-06-01 | 中国电子科技集团公司第十三研究所 | Electrically-controlled attenuation circuit applied to terahertz frequency band and electrically-controlled attenuator |
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| JPS60160201A (en) * | 1984-01-30 | 1985-08-21 | Fujitsu Ltd | Attenuator |
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| US7271682B1 (en) * | 2005-04-15 | 2007-09-18 | Altera Corporation | Wideband temperature-variable attenuator |
| CN202651325U (en) * | 2012-07-20 | 2013-01-02 | 齐齐哈尔大学 | X-waveband film attenuator |
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2014
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Patent Citations (4)
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| JPS60160201A (en) * | 1984-01-30 | 1985-08-21 | Fujitsu Ltd | Attenuator |
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| US7271682B1 (en) * | 2005-04-15 | 2007-09-18 | Altera Corporation | Wideband temperature-variable attenuator |
| CN202651325U (en) * | 2012-07-20 | 2013-01-02 | 齐齐哈尔大学 | X-waveband film attenuator |
Non-Patent Citations (1)
| Title |
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| 高燕: "基于LTCC技术的微带衰减器设计", 《西安电子科技大学硕士学位论文》, 26 September 2013 (2013-09-26), pages 46 - 55 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242826A (en) * | 2014-09-05 | 2014-12-24 | 中国科学院微电子研究所 | Frequency mixer and wireless radio receiving and transmitting system |
| CN105227148A (en) * | 2015-09-28 | 2016-01-06 | 香港城市大学深圳研究院 | For the broadband matching network of power amplifier and construction method and power amplifier |
| CN105227148B (en) * | 2015-09-28 | 2018-02-09 | 香港城市大学深圳研究院 | Broadband matching network and construction method and power amplifier for power amplifier |
| CN105510648A (en) * | 2016-01-14 | 2016-04-20 | 中国电子科技集团公司第十三研究所 | High-isolation microwave test fixture for ultrahigh-power GaN microwave devices |
| CN105510648B (en) * | 2016-01-14 | 2018-03-30 | 中国电子科技集团公司第十三研究所 | One kind is used for super high power GaN microwave device high-isolation microwave test fixtures |
| CN107947754A (en) * | 2017-11-23 | 2018-04-20 | 中国电子科技集团公司第四十研究所 | A kind of Wide band high performance attenuator circuit |
| CN108152998A (en) * | 2017-12-25 | 2018-06-12 | 电子科技大学 | A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit |
| CN112886943A (en) * | 2021-01-27 | 2021-06-01 | 中国电子科技集团公司第十三研究所 | Electrically-controlled attenuation circuit applied to terahertz frequency band and electrically-controlled attenuator |
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|---|---|
| CN103972625B (en) | 2016-06-29 |
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