CN112886943A - Electrically-controlled attenuation circuit applied to terahertz frequency band and electrically-controlled attenuator - Google Patents

Electrically-controlled attenuation circuit applied to terahertz frequency band and electrically-controlled attenuator Download PDF

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Publication number
CN112886943A
CN112886943A CN202110110686.XA CN202110110686A CN112886943A CN 112886943 A CN112886943 A CN 112886943A CN 202110110686 A CN202110110686 A CN 202110110686A CN 112886943 A CN112886943 A CN 112886943A
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electrically
circuit
attenuation circuit
radio frequency
fet device
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CN112886943B (en
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王雨桐
孟范忠
张贞鹏
陈艳
薛昊东
汪璐
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CETC 13 Research Institute
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CETC 13 Research Institute
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention is suitable for the technical field of electrically tunable attenuators, and provides an electrically tunable attenuation circuit applied to a terahertz frequency band and an electrically tunable attenuator, wherein the electrically tunable attenuation circuit comprises: a multi-finger FET device and a radio frequency transmission line; the drains on both sides of the multi-fingers in the multi-finger FET device are connected with a radio frequency transmission line. The invention forms the electrically-controlled attenuation circuit applied to the terahertz frequency band by the multi-finger FET device and the radio frequency transmission line, wherein the drain electrodes at two sides of the multi-finger in the multi-finger FET device are connected with the radio frequency transmission line, so that the radio frequency signal in the formed electrically-controlled attenuation circuit can be horizontally transmitted in the multi-finger FET device, thereby reducing the insertion loss of the electrically-controlled attenuation circuit, and enabling the electrically-controlled attenuation circuit applied to the terahertz frequency band formed by the multi-finger FET device and the radio frequency transmission line to obtain a larger maximum attenuation value through design.

Description

Electrically-controlled attenuation circuit applied to terahertz frequency band and electrically-controlled attenuator
Technical Field
The invention belongs to the technical field of electrically-tuned attenuators, and particularly relates to an electrically-tuned attenuation circuit applied to a terahertz frequency band and an electrically-tuned attenuator.
Background
The electrically-adjustable attenuation circuit is a controller for effectively and continuously adjusting radio-frequency microwave signals through an external control signal, and the size of the radio-frequency signals is controlled by continuously changing the external voltage of a device.
A typical electrically tunable attenuation circuit is generally composed of a PIN diode or a Field Effect Transistor (FET). In the prior art, the FET device has better performance at extremely high working frequency by selecting a proper substrate and FET device structure, such as the maximum working frequency f of an InP-based FET devicemaxThe THz can reach more than 1, but the electrically-controlled attenuation circuit of the terahertz frequency band usually needs to adopt a parallel structure between FET devices, the FET devices need to be connected with a radio frequency transmission line through T-shaped junctions when being connected in parallel to the ground, the T-shaped junctions can increase the insertion loss of the electrically-controlled attenuation circuit in the terahertz frequency band, the maximum attenuation value and the insertion loss of the electrically-controlled attenuation circuit are mutually restricted, the insertion loss of the electrically-controlled attenuation circuit can be increased while the maximum attenuation value of the electrically-controlled attenuation circuit is increased, and further the increase of the maximum attenuation value of the electrically-controlled attenuation circuit is limited.
Disclosure of Invention
In view of this, the embodiment of the present invention provides an electrically tunable attenuation circuit and an electrically tunable attenuator applied to a terahertz frequency band, so as to solve the problem in the prior art that the insertion loss of the electrically tunable attenuation circuit applied to the terahertz frequency band limits the increase of the maximum attenuation value.
The first aspect of the embodiment of the invention provides an electric tuning attenuation circuit applied to a terahertz frequency band, which comprises a multi-finger FET device and a radio frequency transmission line;
and the drains at two sides of the multi-finger in the multi-finger FET device are connected with the radio frequency transmission line.
Optionally, the number of the multi-finger FET devices is N, where N is a positive integer;
when N is 1, the drain electrodes on two sides of the multi-finger in the multi-finger FET device are connected with the radio frequency transmission line;
when N is larger than or equal to 2, the N multi-finger FET devices are connected in parallel, and the drain electrodes on two sides of each multi-finger FET device are connected with the drain electrodes on two sides of the adjacent multi-finger FET devices through the radio frequency transmission line.
Optionally, the electrically tunable attenuation circuit applied to the terahertz frequency band further includes a ground via and N isolation resistors;
the source electrode of each multi-finger FET device is connected with the grounding through hole, the grid electrode of each multi-finger FET device is connected with one end of the corresponding isolation resistor, and the drain electrode of each multi-finger FET device is connected with the drain electrode of the adjacent multi-finger FET device through the radio frequency transmission line;
the other end of each isolation resistor is used as a control end of the electrically-tunable attenuation circuit, the drain electrode of the first multi-finger FET device is connected with the radio-frequency transmission line and then used as a radio-frequency input end of the electrically-tunable attenuation circuit, and the drain electrode of the last multi-finger FET device is connected with the radio-frequency transmission line and then used as a radio-frequency output end of the electrically-tunable attenuation circuit.
Optionally, the multi-finger FET device is a two-finger FET device.
A second aspect of the embodiment of the present invention provides an electrically tunable attenuator, including any one of the electrically tunable attenuation circuits applied to a terahertz frequency band.
Optionally, the electrically tunable attenuation circuit applied to the terahertz frequency band is a first electrically tunable attenuation circuit or a second electrically tunable attenuation circuit;
the electrically-adjusted attenuator further comprises: the first quadrature coupling circuit, the second quadrature coupling circuit, the first absorption load and the second absorption load;
the input/output port of the first orthogonal coupling circuit is used for inputting radio frequency signals to be attenuated, the coupling port of the first orthogonal coupling circuit is connected with the radio frequency input end of the first electrically-tunable attenuation circuit, the through port of the first orthogonal coupling circuit is connected with the radio frequency input end of the second electrically-tunable attenuation circuit, and the isolation port of the first orthogonal coupling circuit is connected with the first absorption load and is used for absorbing the radio frequency signals reflected by the coupling port and the through port of the first orthogonal coupling circuit;
the radio frequency output end of the first electrically-tunable attenuation circuit is connected with the through port of the second orthogonal coupling circuit, the radio frequency output end of the second electrically-tunable attenuation circuit is connected with the coupling port of the second orthogonal coupling circuit, and the control end of the first electrically-tunable attenuation circuit and the control end of the second electrically-tunable attenuation circuit are both used for connecting a control power supply;
the isolation port of the second orthogonal coupling circuit is connected with the second absorption load and used for absorbing the radio frequency signals reflected by the coupling port and the through port of the second orthogonal coupling circuit, and the input/output port of the second orthogonal coupling circuit is used for outputting attenuated radio frequency signals.
Optionally, the first electrically tunable attenuation circuit and the second electrically tunable attenuation circuit have the same structure.
Optionally, the first quadrature coupling circuit and the second quadrature coupling circuit have the same structure.
Optionally, the first quadrature coupling circuit is a wideband quadrature coupling circuit.
Optionally, the wideband quadrature coupling circuit is a Lange structure quadrature coupling circuit.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: the embodiment of the invention forms the electrically-controlled attenuation circuit applied to the terahertz frequency band by the multi-finger FET device and the radio frequency transmission line, wherein the drain electrodes on two sides of the multi-finger FET device are connected with the radio frequency transmission line, so that the radio frequency signal in the formed electrically-controlled attenuation circuit can be horizontally transmitted in the multi-finger FET device, the insertion loss of the electrically-controlled attenuation circuit is reduced, the problem that the insertion loss of the electrically-controlled attenuation circuit is increased due to the introduction of parasitic parameters and non-ideal effects because the FET device and the radio frequency transmission line need to turn right angles when transmitting the radio frequency signal through a T-shaped junction is solved, and the electrically-controlled attenuation circuit applied to the terahertz frequency band and formed by the multi-finger FET device and the radio frequency transmission line can obtain a larger.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic connection diagram of an electrical tuning attenuation circuit applied to a terahertz frequency band according to an embodiment of the present invention;
fig. 2 is a schematic connection diagram of a single-finger FET device in the electrically tunable attenuation circuit according to the embodiment of the present invention;
fig. 3 is a schematic connection diagram of an electrically tunable attenuation circuit applied to a terahertz frequency band according to another embodiment of the present invention;
fig. 4 is a schematic structural diagram of an electrically tunable attenuator provided in an embodiment of the present invention;
fig. 5 is a schematic diagram of a Lange structure quadrature coupling circuit according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic connection diagram of an electrical tuning attenuation circuit applied to a terahertz frequency band according to an embodiment of the present invention, which is detailed as follows: the electrically tunable attenuation circuit includes a multifinger FET device 10 and a radio frequency transmission line 20.
Wherein, the drains D on both sides of the multi-finger in the multi-finger FET device 10 are connected with the radio frequency transmission line 20.
The Field Effect Transistors (FET) are generally connected in parallel, and the more FET devices are connected in parallel, the larger the maximum attenuation value of the formed electrically-controlled attenuation circuit is. However, in the electrically tunable attenuation circuit formed by the conventional FET devices, each FET device needs a T-shaped junction to be connected with a radio frequency transmission line, the more FET devices connected in parallel in the electrically tunable attenuation circuit, the larger parasitic parameters and non-ideal effects introduced by the T-shaped junction, and the larger insertion loss of the electrically tunable attenuation circuit, and in the use of the electrically tunable attenuation circuit, the smaller the insertion loss is, the better the insertion loss is, that is, the insertion loss of the electrically tunable attenuation circuit restricts the increase of the maximum attenuation value of the electrically tunable attenuation circuit.
Referring to fig. 2, when the conventional FET devices are connected in parallel, the rf transmission line needs to form a T-junction to connect with the FET devices, that is, the rf signal is transmitted along the lateral direction of the T-junction, the transmission direction is unchanged, a port is separately led out to connect with the drain (D pole) of the FET devices, and the source (S pole) of the FET devices is grounded through the grounding via 30. In the connection structure, the FET device and the signal transmission direction are in a vertical relation, the insertion loss of the electrically-tunable attenuation circuit is increased by complex parasitic parameters introduced by the T-shaped junction, the bandwidth is limited, the design difficulty is increased, and the nonideal effect is also introduced.
According to the electrically-controlled attenuation circuit applied to the terahertz frequency band, the drains on two sides of the multi-finger FET device are connected with the radio frequency transmission line, when a radio frequency signal passes through the multi-finger FET device, the drains on two sides of the multi-finger FET device are bridged through the air bridge, the air bridge can be simply equivalent to an inductor under high frequency, and the inductor is much weaker than a non-ideal effect introduced by a T-shaped junction, so that the radio frequency signal transmitted in the radio frequency transmission line can pass through the multi-finger FET device along a straight line in the arrow direction in fig. 1 without turning at a right angle, the T-shaped junction is avoided being formed, the insertion loss of the electrically-controlled attenuation circuit is further reduced, the design difficulty of the electrically-controlled attenuation circuit formed by the FET devices is favorably reduced, and the electrically-controlled attenuation circuit applied to the terahertz frequency band formed by the multi-finger FET devices can obtain a larger maximum attenuation.
Optionally, referring to fig. 3, the number of the multi-finger FET devices 10 in the electrically tunable attenuation circuit may be N, where N is a positive integer.
Wherein, when N is 1, the drains on both sides of the multi-finger in the multi-finger FET device 10 are connected to the rf transmission line 20.
When N is larger than or equal to 2, the N multi-finger FET devices 10 are connected in parallel, and the drain electrodes on two sides of each multi-finger FET device 10 are connected with the drain electrodes on two sides of the adjacent multi-finger FET devices 10 through the radio frequency transmission line 20.
When the FET device is used for forming the electrically-adjusted attenuation circuit, when the voltage between the grid source and the source of the FET device changes, the FET device can be equivalent to a voltage-controlled resistor, and the resistance between the source and the drain can change along with the change of the conduction state of the FET device. Since the high-frequency performance of the FET device is limited by the parasitic parameters of the FET device, such as the gate-source capacitance Cgs, the gate-drain capacitance Cgd, and the drain-source parasitic capacitance Cds, in particular, the source-drain parasitic capacitance Cds of the FET device in the off state greatly limits the operating frequency of the FET device in the series structure, the sub-millimeter wave and terahertz frequency bands generally use the parallel structure. When the requirement on the attenuation range of the electrically-tuned attenuation circuit is not high, the electrically-tuned attenuation circuit applied to the terahertz frequency band can be formed by a single-stage FET device formed by a multi-finger FET device. In addition, a multistage parallel structure can be formed by at least two multi-finger FET devices, and a circuit applied to a terahertz frequency band is formed by the multistage parallel structure, wherein the number of the multi-finger FET devices connected in parallel in the specific multistage parallel structure can be selected according to actual requirements for the maximum attenuation value of the electrically tuned attenuation circuit, the number of gate fingers specifically included in each multi-finger FET device in the multistage parallel structure and the gate width of each gate finger can be designed as required, the length and the width of a radio frequency transmission line between two adjacent multi-finger FET devices can also be designed as required, and the embodiment does not limit the length and the width.
Optionally, referring to fig. 3, the electrically tunable attenuation circuit applied to the terahertz frequency band may further include a ground via 30 and N isolation resistors Rg.
The source S of each multi-finger FET device 10 is connected to the ground via 30, the gate G of each multi-finger FET device 10 is connected to one end of a corresponding isolation resistor Rg, and the drain D of each multi-finger FET device 10 is connected to the drain D of an adjacent multi-finger FET device 10 through the radio frequency transmission line 20.
The other end of each isolation resistor Rg serves as a control end of the electrically-tuned attenuation circuit, the drain D of the first multi-finger FET device 10 is connected with the radio-frequency transmission line 20 and then serves as a radio-frequency input end P1 of the electrically-tuned attenuation circuit, and the drain D of the last multi-finger FET device 10 is connected with the radio-frequency transmission line 20 and then serves as a radio-frequency output end P2 of the electrically-tuned attenuation circuit.
The number of the ground vias 30 may be one-to-one corresponding to the number of the multi-finger FET devices, the source of each multi-finger FET device is connected to one corresponding ground via, the number of the ground vias 30 may also be not one-to-one corresponding to the number of the multi-finger FET devices, and the sources of the multi-finger FET devices are connected to the same ground via according to the circuit layout.
Each isolation resistor Rg is connected between the grid of the corresponding multifinger FET device and the control end Vc of the electrically-controlled attenuation circuit, and the control end Vc of the electrically-controlled attenuation circuit is used for being connected with a control power supply. Isolation resistors Rg are connected between the control end Vc of the electrically-adjusted attenuation circuit and the grid electrode of each multi-finger FET device, and therefore crosstalk between radio-frequency signals and the control end can be reduced to the maximum extent.
Alternatively, the multi-finger FET device may be a two-finger FET device.
In this embodiment, the two-finger FET device is used to form the electrically tunable attenuation circuit applied to the terahertz frequency band, so that the insertion loss of the electrically tunable attenuation circuit can be reduced to the greatest extent, and thus, when the electrically tunable attenuation circuit applied to the terahertz frequency band is formed, the design difficulty is reduced, and the electrically tunable attenuation circuit applied to the terahertz frequency band with a larger maximum attenuation value can be obtained conveniently.
As an embodiment of the present invention, the present invention further includes an electrically tunable attenuator, which includes the electrically tunable attenuation circuit applied to the terahertz frequency band described in any one of the above embodiments, and has the same beneficial effects as the electrically tunable attenuation circuit applied to the terahertz frequency band described in any one of the above embodiments.
Optionally, referring to fig. 4, the electrically tunable attenuation circuit applied to the terahertz frequency band in any of the above embodiments may be a first electrically tunable attenuation circuit or a second electrically tunable attenuation circuit; the electrically tunable attenuator may further include: the first quadrature coupling circuit, the second quadrature coupling circuit, the first absorption load and the second absorption load.
The input/output port 1 of the first orthogonal coupling circuit is used for inputting a radio frequency signal RF1 to be attenuated, the coupling port 2 of the first orthogonal coupling circuit is connected with the radio frequency input end P1 of the first electrically-tuned attenuation circuit, the through port 3 of the first orthogonal coupling circuit is connected with the radio frequency input end P1 of the second electrically-tuned attenuation circuit, and the isolation port 4 of the first orthogonal coupling circuit is connected with the first absorption load and used for absorbing radio frequency signals reflected by the coupling port 2 and the through port 3 of the first orthogonal coupling circuit.
The radio frequency output end P2 of the first electrically-adjustable attenuation circuit is connected with the through port 3 of the second orthogonal coupling circuit, the radio frequency output end P2 of the second electrically-adjustable attenuation circuit is connected with the coupling port 2 of the second orthogonal coupling circuit, and the control end Vc of the first electrically-adjustable attenuation circuit and the control end Vc of the second electrically-adjustable attenuation circuit are both used for being connected with a control power supply.
The isolation port 4 of the second quadrature coupling circuit is connected to a second absorption load for absorbing the radio frequency signal reflected by the coupling port 2 and the through port 3 of the second quadrature coupling circuit, and the input/output port 1 of the second quadrature coupling circuit is for outputting an attenuated radio frequency signal RF 2.
The control end Vc of the first electrically-controlled attenuation circuit and the control end Vc of the second electrically-controlled attenuation circuit can be connected to the same control power supply, and can also be connected with the control power supply respectively, and the control power supplies are the same in size when being connected with the control power supplies respectively.
For electrically tunable attenuators, the return loss of a port under different control voltages is an important parameter, and is also a key of the electrically tunable attenuators, which is different from a single-pole single-throw switch. Generally, under low frequency, impedance changes caused by changes of conduction states of FET devices under different control voltages have little influence on standing waves of a radio frequency port of the overall electrically-tunable attenuator, but under high frequency, especially in a submillimeter wave terahertz frequency band above 100GHz, such changes can cause significant changes in impedance of the overall electrically-tunable attenuator, and even a situation of total reflection of the radio frequency port of the electrically-tunable attenuator under a certain control voltage can occur, so that it is important for the electrically-tunable attenuator applied to the terahertz frequency band to control port impedance under different control voltages.
In this embodiment, a radio frequency signal RF1 to be attenuated is input through an input/output port 1 of a first orthogonal coupling circuit, is divided into two paths of equal-amplitude orthogonal signals which are orthogonal to each other and have a phase difference of 90 degrees through the first orthogonal coupling circuit, is input to a first electrically-tuned attenuation circuit and a second electrically-tuned attenuation circuit through a coupling port 2 and a through port 3 of the first orthogonal coupling circuit, is input to a coupling port 2 and a through port 3 of the second orthogonal coupling circuit through a radio frequency output end of the first electrically-tuned attenuation circuit and a radio frequency output end of the second electrically-tuned attenuation circuit, is further orthogonally combined into one path through the second orthogonal coupling circuit, and is output by an input/output port of the second orthogonal coupling circuit as an attenuated radio frequency signal RF 2.
When the electrically-tunable attenuator of this embodiment is used to control the magnitude of a radio frequency signal, that is, in the process of controlling the voltage change at the control ends of the first electrically-tunable attenuation circuit and the second electrically-tunable attenuation circuit, the impedance change of the first electrically-tunable attenuation circuit and the second electrically-tunable attenuation circuit causes the reflected radio frequency signal to be absorbed by the second absorption load connected to the isolation port of the first orthogonal coupling circuit, which is connected to the first absorption load, and the second absorption load connected to the isolation port of the second orthogonal coupling circuit, and not reflected to the input/output ends of the first orthogonal coupling circuit and the second orthogonal coupling circuit, thereby ensuring that the standing wave at the radio frequency port of the integral electrically-tunable attenuator is good.
Although compared with the conventional electrically-tuned attenuator, the electrically-tuned attenuator of the present embodiment increases the extra loss of the two orthogonal coupling circuits, in such a structure, each electrically-tuned attenuator circuit can be designed without considering compromise between loss and port standing waves, so that design optimization with lower loss is focused, and lower loss can be obtained.
In addition, the first electrically tunable attenuation circuit and the second electrically tunable attenuation circuit of this embodiment are both the electrically tunable attenuation circuit applied to the terahertz frequency band described in any of the above embodiments, so that the electrically tunable attenuator of this embodiment can obtain a large maximum attenuation value on the premise of ensuring good standing waves at the radio frequency port.
Optionally, the first electrically tunable attenuation circuit and the second electrically tunable attenuation circuit have the same structure.
In this embodiment, the first electrically tunable attenuation circuit and the second electrically tunable attenuation circuit have the same structure, so that two paths of constant-amplitude orthogonal signals output by the first orthogonal coupling circuit are attenuated identically.
Exemplarily, on the premise that the structures of the first electrically tunable attenuation circuit and the second electrically tunable attenuation circuit are the same, the position corresponding to the second electrically tunable attenuation circuit can be obtained by rotating the position of the first electrically tunable attenuation circuit by 180 degrees, and on the premise that the structures of the first electrically tunable attenuation circuit and the second electrically tunable attenuation circuit are the same, the position corresponding to the second electrically tunable attenuation circuit can be obtained by rotating the position of the first electrically tunable attenuation circuit by 180 degrees, so that the obtained electrically tunable attenuators are completely symmetrical, and the standing wave of the radio frequency port of the electrically tunable attenuator can be improved.
Optionally, the first quadrature coupling circuit and the second quadrature coupling circuit have the same structure.
The orthogonal coupling circuits may be a branch orthogonal coupling circuit, a Lange structure orthogonal coupling circuit, or a ring orthogonal coupling circuit, and the first orthogonal coupling circuit and the second orthogonal coupling circuit on the left and right sides of the electrically tunable attenuator in this embodiment may be a branch orthogonal coupling circuit, a Lange structure orthogonal coupling circuit, or a ring orthogonal coupling circuit at the same time.
Because the bandwidth of the electrically tunable attenuator is mainly limited by the orthogonal coupling circuit, optionally, the first orthogonal coupling circuit may be a broadband orthogonal coupling circuit to ensure the circuit performance of the electrically tunable attenuator in a wider frequency band.
Alternatively, the wideband quadrature coupling circuit may be a Lange-structure quadrature coupling circuit as shown in fig. 5, and the Lange-structure quadrature coupling circuit may obtain better amplitude consistency and phase orthogonality in a wider bandwidth.
The embodiment of the invention provides a circuit topological structure of the electrically-tuned attenuator applicable to the terahertz frequency band instead of a specific circuit of the electrically-tuned attenuator.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.

Claims (10)

1. An electric tuning attenuation circuit applied to a terahertz frequency band is characterized by comprising a multi-finger FET device and a radio frequency transmission line;
and the drains at two sides of the multi-finger in the multi-finger FET device are connected with the radio frequency transmission line.
2. The electrically tunable attenuation circuit applied to the terahertz frequency band according to claim 1, wherein the number of the multifinger FET devices is N, and N is a positive integer;
when N is 1, the drain electrodes on two sides of the multi-finger in the multi-finger FET device are connected with the radio frequency transmission line;
when N is larger than or equal to 2, the N multi-finger FET devices are connected in parallel, and the drain electrodes on two sides of each multi-finger FET device are connected with the drain electrodes on two sides of the adjacent multi-finger FET devices through the radio frequency transmission line.
3. The electrically tunable attenuation circuit applied to the terahertz frequency band according to claim 2, further comprising a ground via and N isolation resistors;
the source electrode of each multi-finger FET device is connected with the grounding through hole, the grid electrode of each multi-finger FET device is connected with one end of the corresponding isolation resistor, and the drain electrode of each multi-finger FET device is connected with the drain electrode of the adjacent multi-finger FET device through the radio frequency transmission line;
the other end of each isolation resistor is used as a control end of the electrically-tunable attenuation circuit, the drain electrode of the first multi-finger FET device is connected with the radio-frequency transmission line and then used as a radio-frequency input end of the electrically-tunable attenuation circuit, and the drain electrode of the last multi-finger FET device is connected with the radio-frequency transmission line and then used as a radio-frequency output end of the electrically-tunable attenuation circuit.
4. The electrically tunable attenuation circuit applied to the terahertz frequency band according to any one of claims 1 to 3, wherein the multi-finger FET device is a two-finger FET device.
5. An electrically tunable attenuator, characterized by comprising the electrically tunable attenuation circuit applied to the terahertz frequency band as claimed in any one of claims 1 to 4.
6. The electrically tunable attenuator of claim 5, wherein the electrically tunable attenuation circuit applied to the terahertz frequency band is a first electrically tunable attenuation circuit or a second electrically tunable attenuation circuit;
the electrically-adjusted attenuator further comprises: the first quadrature coupling circuit, the second quadrature coupling circuit, the first absorption load and the second absorption load;
the input/output port of the first orthogonal coupling circuit is used for inputting radio frequency signals to be attenuated, the coupling port of the first orthogonal coupling circuit is connected with the radio frequency input end of the first electrically-tunable attenuation circuit, the through port of the first orthogonal coupling circuit is connected with the radio frequency input end of the second electrically-tunable attenuation circuit, and the isolation port of the first orthogonal coupling circuit is connected with the first absorption load and is used for absorbing the radio frequency signals reflected by the coupling port and the through port of the first orthogonal coupling circuit;
the radio frequency output end of the first electrically-tunable attenuation circuit is connected with the through port of the second orthogonal coupling circuit, the radio frequency output end of the second electrically-tunable attenuation circuit is connected with the coupling port of the second orthogonal coupling circuit, and the control end of the first electrically-tunable attenuation circuit and the control end of the second electrically-tunable attenuation circuit are both used for connecting a control power supply;
the isolation port of the second orthogonal coupling circuit is connected with the second absorption load and used for absorbing the radio frequency signals reflected by the coupling port and the through port of the second orthogonal coupling circuit, and the input/output port of the second orthogonal coupling circuit is used for outputting attenuated radio frequency signals.
7. The electrically adjustable attenuator of claim 6, wherein the first electrically adjustable attenuator circuit and the second electrically adjustable attenuator circuit are identical in structure.
8. The electrically tunable attenuator of claim 6 or 7, wherein the first quadrature coupling circuit and the second quadrature coupling circuit are identical in structure.
9. The electrically tunable attenuator of claim 8, wherein the first quadrature coupling circuit is a wideband quadrature coupling circuit.
10. The electrically tunable attenuator of claim 9, wherein the broadband quadrature coupling circuit is a Lange-structured quadrature coupling circuit.
CN202110110686.XA 2021-01-27 2021-01-27 Electric tuning attenuation circuit and electric tuning attenuator applied to terahertz frequency band Active CN112886943B (en)

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