CN105510648B - One kind is used for super high power GaN microwave device high-isolation microwave test fixtures - Google Patents
One kind is used for super high power GaN microwave device high-isolation microwave test fixtures Download PDFInfo
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- CN105510648B CN105510648B CN201610024246.1A CN201610024246A CN105510648B CN 105510648 B CN105510648 B CN 105510648B CN 201610024246 A CN201610024246 A CN 201610024246A CN 105510648 B CN105510648 B CN 105510648B
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- match circuit
- isolation
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- drain electrode
- grid
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0425—Test clips, e.g. for IC's
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses one kind to be used for super high power GaN microwave device high-isolation microwave test fixtures, belongs to semiconducter device testing technical field.The present invention includes test box body, pcb board, briquetting, direct current biasing exit, radio frequency input and output exit, and pcb board is placed in testing cassete body, and pcb board includes feed match circuit and radio frequency input and output micro-strip；Feed match circuit is divided into grid feed match circuit and drain electrode feed match circuit two parts, grid feed match circuit includes double fan-shaped line, two RC filter networks, gate bias resistor, grid filter capacitors, and drain electrode feed match circuit includes double fan-shaped lines, two RC filter networks, drain electrode filter capacitor；Direct current biasing exit is drawn by two feedthrough capacitors from feed match circuit；Radio frequency input and output exit is that coaxial transmission turns micro-strip transfer connector.The present invention solve the problems, such as in microwave device super high power test process exist drain electrode leakage radiofrequency signal isolation it is inadequate, direct current biasing module can be avoided to burn, ensure test result it is authentic and valid.
Description
Technical field
It is especially a kind of to be used for super high power GaN microwave devices height the invention belongs to semiconducter device testing technical field
Isolation microwave test fixture.
Background technology
GaN semiconductor technologies have turned into the inevitable development trend of high-power technology.Compared with second generation semiconductor GaAs,
GaN (gallium nitride) device has the electron saturation velocities of higher breakdown voltage and Geng Gao and higher power output, its work(
Rate density reaches more than 10 times of GaAs (GaAs), and high operating voltage effectively improves the efficiency of whole system.
High-power GaN microwave devices are voltage control device, and packing forms are cermet shell, and internal structure includes grid
Match circuit, leakage match circuit, matching capacitance, active chip, bonding gold wire.Shell base is source electrode, and two exits are respectively
Grid, drain electrode.Super high power GaN microwave devices have that active chip grid width is big, and drain voltage is high, output power feature.It is micro-
The main performance of wave device includes power, gain and efficiency.With the significantly lifting of device microwave property, how accurately by it
Performance reflects, and the effect of test fixture is most important.
Microwave test fixture is the bridge between tester and measured device, and test fixture will realize three basic functions:
Fixed measured piece, DC feedback and signal coaxial transmission turn the function of micro-strip transmission.Feed is that microwave device test fixture is set
The content that weight calculation point considers, it is divided into grid feed and drain electrode feed two parts.Feed matching network mainly include resistance, electric capacity,
Fan-shaped line short-circuit line.Because super high power device output power has reached hectowatt, multikilowatt, if testing cassete output matching network every
Inadequate from degree, in test, excessive radio frequency, which is revealed, will burn drain electrode power supply module.
Microwave test fixture feeds match circuit generally use list sector structure, with GaN microwave devices operating voltage, output
The lifting of power, conventional test fixture can not meet requirement, in high pressure super high power microwave device test process
In the presence of drain electrode leakage radiofrequency signal isolation it is inadequate the problem of.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of super high power GaN microwave devices high-isolation microwave test
Fixture, for high pressure super high power microwave device microwave test, solve and leakage in microwave device super high power test process be present
The problem of isolation of pole leakage radiofrequency signal is inadequate, can avoid direct current biasing module from burning, and ensure that test result truly has
Effect, is also applied for similar device microwave test.
In order to solve the above technical problems, the technical solution used in the present invention is：One kind is used for super high power GaN microwave devices
Part high-isolation microwave test fixture, including test box body, pcb board, briquetting, direct current biasing exit, radio frequency input and output draw
Go out end, pcb board is placed in testing cassete body, and pcb board includes feed match circuit and radio frequency input and output micro-strip；Feed match circuit
It is divided into grid feed match circuit and drain electrode feed match circuit two parts, grid feed match circuit includes double fan-shaped line, two
Individual RC filter networks, gate bias resistor, grid filter capacitor, drain electrode feed match circuit include double fan-shaped lines, two RC filters
Wave network, drain electrode filter capacitor；Direct current biasing exit is drawn by two feedthrough capacitors from feed match circuit, a punching
Capacitor core one end is welded on grid feed power-up end, and the other end of the feedthrough capacitor fuse passes through wire and direct current biasing module
A connections, another feedthrough capacitor fuse one end are welded on drain electrode feed power-up end, and the other end of the feedthrough capacitor fuse is by leading
Line is connected with direct current biasing modules A；Radio frequency input and output exit is that coaxial transmission turns micro-strip transfer connector, and coaxial transmission turns micro-
Include the radio frequency input adapter and radio frequency out splice going splice for being divided into test box body both sides, radio frequency input adapter and device with transfer connector
Part grid by radio frequency input micro-strip connect, between plus capacitance play blocking；Radio frequency out splice going splice leads to device drain
Cross radio frequency output micro-strip connection, between plus capacitance play blocking；Briquetting has four exits, two of which immobilising device
Source electrode, a fixed grid, a fixed drain electrode.
Further technical scheme, the design of the gate bias resistor of the grid feed match circuit are considering work bar
Under part while electric resistance partial pressure size, also to consider resistance and be resistant to rated power and to circuit stability effect.
Further technical scheme, the gate bias resistor that grid is fed in match circuit select 4 20 Ω Chip-Rs
It is in parallel.
Further technical scheme, RC filter networks in the feed match circuit using 51 Ω Chip-Rs and
1000pF patch capacitors series connection ground structure.
Further technical scheme, isolation parameters simulation is carried out to feed match circuit using ADS softwares, according to isolation
Degree result obtains two fan-shaped short-circuit line optimal sizes, and the short-circuit linear dimension of grid feed two sectors of match circuit is presented with reference to drain electrode
Electric match circuit.
Further technical scheme, the fan-shaped radius of the fan-shaped line determined according to isolation result is 0.508mm, and arc institute is right
The central angle number of degrees are 120 °.
Further technical scheme, direct current biasing exit selection 1500pF feedthrough capacitors, which are fixed on feedthrough capacitor, fixes peace
Fill at hole, feedthrough capacitor one end is connected pressure point welding with direct current biasing on pcb board, the other end welding of feedthrough capacitor is suitable long
The wire of degree is connected with direct current biasing modules A, and wherein feedthrough capacitor load voltage value need to be more than drain electrode operating voltage.
Further technical scheme, the capacitance in radio frequency input and output micro-strip select 1000pF patch capacitors.
Further technical scheme, grid filter capacitor select 1000pF capacitance electric capacity, and drain electrode filter capacitor is by 3
6800pF patch capacitors compose in parallel.
Further technical scheme, in addition to fin, test fixture are fixed on a heat sink, and to be measured with fan auxiliary
Device cools.
It is using beneficial effect caused by above-mentioned technical proposal：The present invention makes survey based on feed Match circuits
Device under test steady operation during examination, the isolation of leakage radiofrequency signal is improved, available for high pressure super high power microwave device
Part microwave test, solve exist in microwave device super high power test process drain electrode leakage radiofrequency signal isolation it is inadequate
Problem, direct current biasing module can be avoided to burn, ensure that test result is authentic and valid, be also applied for similar device microwave test.
The fixture is that emphasis is improved to feed match circuit sector short-circuit line on the basis of existing test fixture, i.e., single fan-shaped line
Two fan-shaped lines are changed to, so that suitable for device super high power output characteristic, the fixture cost is low, easily realizes, is given birth to for related scientific research
Production work provides safeguard.
Brief description of the drawings
Fig. 1 is the top view of the present invention；
Fig. 2 is Fig. 1 D-D sectional views；
Fig. 3 is the upward view of briquetting；
Fig. 4 is Fig. 3 E-E sectional views；
Fig. 5 is the structural representation of one embodiment of the invention；
In figure：1- test box bodys, 2-PCB plates, 3- radio frequency input and output micro-strips, 4- coaxially turn micro-strip coaxial fitting, and 5- is inclined
Put line, 6- gate bias resistors, 7- direct current biasings connection pressure point, 8- feedthrough capacitors are fixedly mounted hole, 9- grid filter capacitors,
Hole, 15- box bodys is fixedly mounted in 10- drain electrode filter capacitors, 11- fan-shaped lines, 12-RC filter networks, 13- capacitances, 14- devices
Hole is fixedly mounted in briquetting, and hole, 17- briquetting screw fixed holes, 18- device wire pressure points, A- direct current biasings is fixedly mounted in 16- fixtures
Module, B- microwave test modules, C- device under tests.
Embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Microwave test fixture feeds match circuit generally use list sector structure, is tested in high pressure super high power microwave device
During exist drain electrode leakage radiofrequency signal isolation it is inadequate the problem of, the invention provides a kind of high pressure super high power microwave
Device high-isolation test fixture, successfully solves microwave device super high power test problem.
Referring to shown in Fig. 1-Fig. 4, it is defeated that the present invention includes test box body 1, pcb board 2, briquetting, direct current biasing exit, radio frequency
Enter and export exit, pcb board 2 is placed in testing cassete body, and pcb board 2 includes feed match circuit and radio frequency input and output micro-strip 3；
Feed match circuit is divided into grid feed match circuit and drain electrode feed match circuit two parts, and grid feed match circuit includes
Two fan-shaped lines 11, two RC filter networks 12, gate bias resistor 6, grid filter capacitors 9, drain electrode feed match circuit bag
Include two fan-shaped lines, 11, two RC filter networks 12, drain electrode filter capacitor 10；Direct current biasing exit by two feedthrough capacitors from
Drawn on feed match circuit, a feedthrough capacitor fuse one end is welded on grid feed power-up end, the feedthrough capacitor fuse
The other end is connected by wire with direct current biasing modules A, and another feedthrough capacitor fuse one end is welded on drain electrode feed power-up end,
The other end of the feedthrough capacitor fuse is connected by wire with direct current biasing modules A；Radio frequency input and output exit passes to be coaxial
Defeated to turn micro-strip transfer connector 4, coaxial transmission turns radio frequency input of the micro-strip transfer connector 4 including being divided into test box body 1 both sides and connect
Head and radio frequency out splice going splice, radio frequency input adapter and device grids input micro-strip by radio frequency and are connected, between add capacitance 13
Play blocking；Radio frequency out splice going splice and device drain export micro-strip by radio frequency and be connecteds, between add capacitance 13 to play blocking
Effect；Briquetting has four exits, two of which immobilising device source electrode, a fixed grid, a fixed drain electrode.
The wherein design of the gate bias resistor 6 of grid feed match circuit electric resistance partial pressure size in the case where considering condition of work
While, also to consider resistance and be resistant to rated power and to circuit stability effect.
As shown in figure 1, pcb board 2 includes gate bias match circuit and drain dias match circuit, radio frequency input and output micro-strip 3,
Pcb board 2 uses 30mil (=0.762), loss angle tangent using the serial sheet material of Rutgers (Rogers) 6002, sheet metal thickness
TanD=0.0012.To ensure that device power-up procedures are stable, optimize resistance, capacitance parameter in offsets match circuit.Wherein grid
Match circuit is fed partially due to increasing with device grid width, device itself grid reverse leakage current becomes big, gate bias resistor 6
The voltage got can not ignore, and the design of the gate bias resistor 6 of grid feed match circuit sections in series is considering
Under condition of work while electric resistance partial pressure size, also to consider resistance and be resistant to rated power and to circuit stability effect；
By improving the isolation to revealing radiofrequency signal using two fan-shaped short-circuit line forms in feeding match circuit in drain electrode, for
Test frequency range and isolation parameters simulation is carried out to feed match circuit using ADS softwares, obtained according to isolation result fan-shaped short
Route optimal size, the fan-shaped short-circuit linear dimension that grid is fed in match circuit feed match circuit with reference to drain electrode.
In the present invention, the resistance capacitance parameter of selection is as follows：It is used as grid feedback from 4 20 ohm chip resistor parallel connections
Gate bias resistor 6 in electric match circuit；From 1000pF capacitances electric capacity as grid filter capacitor 9；Drain filter capacitor 10
Composed in parallel by 3 6800pF patch capacitors；The RC filter networks 12 that are connected with fan-shaped line from 51 Ω Chip-Rs and
1000pF patch capacitors series connection ground structure；Capacitance 13 in radio frequency input and output micro-strip 3 selects 1000pF patch capacitors；
Isolation parameters simulation is carried out to feed match circuit using ADS (Advanced Design System) softwares, according to isolation
Degree result determines that fan-shaped line sector radius is 0.508mm, and arc institute is 120 ° to the central angle number of degrees, through ADS software emulations, used
Two-stage sector short-circuit line isolation can reach 51dB in frequency range, and 25dB is improved than single fan-shaped short-circuit line isolation.
Pcb board 2 is printed circuit board (PCB), is freezed in the inner chamber of box body 1, box body rapidoprint is brass.Direct current biasing is drawn
End selection 1500pF feedthrough capacitors are fixed on feedthrough capacitor and are fixedly mounted at hole 8, are allowed to one end and are connected with direct current biasing on pcb board
Pressure point 7 is welded, and the wire of one end welding appropriate length is connected with direct current biasing modules A, as shown in figure 5, wherein feedthrough capacitor volume
Drain electrode operating voltage need to be more than by determining magnitude of voltage.
Because device under test is high power device, it is contemplated that device radiates, and need to fix on a heat sink test fixture, be used in combination
Fan additional device cools, to ensure that device shell temperature is no more than rated value requirement.As shown in figure 5, device under test C is placed on device
In groove, screw is arranged on device and is fixedly mounted in hole 14 to fix device under test C.Briquetting briquetting screw fixed hole 17 and box body
The installation of the position of hole 15 is fixedly mounted in briquetting, and test block is fixed using briquetting.16, hole need to be fixedly mounted by fixture in test fixture
Put and fix on a heat sink, and cooled with fan additional device.The coaxial micro-strip coaxial fitting 4 and microwave test module B that turns is connected
Connect, as shown in Figure 5.
Device wire pressure point 18 plays fixed device under test grid, drain electrode, makes grid, drain electrode and radio frequency input and output micro-
Band is in close contact.
After test fixture connects test system, microwave test is carried out to device.Device first applies biased electrical by operating point
Pressure, then apply radio-frequency input signals, power output is monitored, completes power, gain, the test of efficiency microwave parameters.
Above-described embodiment is only the part of the embodiment of the present invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made,
Belong to the scope of protection of the invention.
Claims (10)
1. one kind is used for super high power GaN microwave device high-isolation microwave test fixtures, it is characterised in that including testing box body
(1), pcb board (2), briquetting, direct current biasing exit, radio frequency input and output exit, pcb board (2) are placed in testing cassete body,
Pcb board (2) includes feed match circuit and radio frequency input and output micro-strip (3)；Feed match circuit is divided into grid feed matching electricity
Road and drain electrode feed match circuit two parts, grid feed match circuit include two fan-shaped lines (11), two RC filter networks
(12), gate bias resistor (6), grid filter capacitor (9), drain electrode feed match circuit include two fan-shaped lines (11), two
RC filter networks (12), drain electrode filter capacitor (10)；Direct current biasing exit is by two feedthrough capacitors from feed match circuit
Draw, a feedthrough capacitor fuse one end is welded on grid feed power-up end, and the other end of the feedthrough capacitor fuse passes through wire
It is connected with direct current biasing modules A, another feedthrough capacitor fuse one end is welded on drain electrode feed power-up end, the feedthrough capacitor fuse
The other end be connected by wire with direct current biasing modules A；Radio frequency input and output exit turns micro-strip transmission for coaxial transmission and connect
Head (4), coaxial transmission turn the radio frequency input adapter and radio frequency that micro-strip transfer connector (4) includes being divided into test box body (1) both sides
Out splice going splice, radio frequency input adapter and device grids input micro-strip by radio frequency and be connecteds, between plus capacitance (13) blocking
Effect；Radio frequency out splice going splice and device drain export micro-strip by radio frequency and be connecteds, between add capacitance (13) to play blocking；
Briquetting has four exits, two of which immobilising device source electrode, a fixed grid, a fixed drain electrode.
2. one kind according to claim 1 is used for super high power GaN microwave device high-isolation microwave test fixtures, it is special
Sign is, the design of the gate bias resistor (6) of the grid feed match circuit electric resistance partial pressure in the case where considering condition of work is big
While small, also to consider resistance and be resistant to rated power and to circuit stability effect.
3. one kind according to claim 2 is used for super high power GaN microwave device high-isolation microwave test fixtures, it is special
Sign is that the gate bias resistor (6) in grid feed match circuit is in parallel from 4 20 ohm chip resistors.
4. one kind according to claim 1 is used for super high power GaN microwave device high-isolation microwave test fixtures, it is special
Sign is that the RC filter networks (12) in the feed match circuit are connected using 51 Ω Chip-Rs and 1000pF patch capacitors
Ground structure.
5. one kind according to claim 1 is used for super high power GaN microwave device high-isolation microwave test fixtures, it is special
Sign is, carries out isolation parameters simulation to feed match circuit using ADS softwares, two sectors are obtained according to isolation result
Short-circuit line optimal size, the short-circuit linear dimension of two sectors that grid is fed in match circuit feed match circuit with reference to drain electrode.
6. one kind according to claim 5 is used for super high power GaN microwave device high-isolation microwave test fixtures, it is special
Sign is, is 0.508mm according to fan-shaped line (11) fan-shaped radius that isolation result determines, arc is to the central angle number of degrees
120°。
7. one kind according to claim 1 is used for super high power GaN microwave device high-isolation microwave test fixtures, it is special
Sign is that direct current biasing exit selection 1500pF feedthrough capacitors are fixed on feedthrough capacitor and hole (8) place is fixedly mounted, and make punching electric
Hold one end and pressure point (7) welding, the wire of the other end welding appropriate length of feedthrough capacitor are connected with direct current biasing on pcb board (2)
It is connected with direct current biasing modules A, wherein feedthrough capacitor load voltage value need to be more than drain electrode operating voltage.
8. one kind according to claim 1 is used for super high power GaN microwave device high-isolation microwave test fixtures, it is special
Sign is that the capacitance (13) in radio frequency input and output micro-strip (3) selects 1000pF patch capacitors.
9. one kind according to claim 1 is used for super high power GaN microwave device high-isolation microwave test fixtures, it is special
Sign is that grid filter capacitor (9) selects 1000pF capacitance electric capacity, and drain electrode filter capacitor (10) is by 3 6800pF patch capacitors
Compose in parallel.
10. one kind according to claim 1 is used for super high power GaN microwave device high-isolation microwave test fixtures, its
It is characterised by, in addition to fin, test fixture are fixed on a heat sink, and cooled with fan auxiliary device under test.
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| CN201610024246.1A CN105510648B (en) | 2016-01-14 | 2016-01-14 | One kind is used for super high power GaN microwave device high-isolation microwave test fixtures |
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| CN201610024246.1A CN105510648B (en) | 2016-01-14 | 2016-01-14 | One kind is used for super high power GaN microwave device high-isolation microwave test fixtures |
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| CN105510648B true CN105510648B (en) | 2018-03-30 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106383251B (en) * | 2016-11-30 | 2018-10-09 | 中国电子科技集团公司第二十九研究所 | A kind of wideband high-power test fixture |
| CN106771687B (en) * | 2016-12-22 | 2023-11-24 | 深圳市华讯方舟卫星产业科技有限公司 | Device and method for testing noise of microwave product after CAP assembly |
| CN107422199A (en) * | 2017-04-28 | 2017-12-01 | 中国电子科技集团公司第二十九研究所 | A kind of Multi-channel microwave component test system |
| CN107942105A (en) * | 2017-11-23 | 2018-04-20 | 中国电子科技集团公司第四十研究所 | A kind of waveguide-to-coaxial adapter test fixture and test method |
| CN109596866A (en) * | 2018-12-26 | 2019-04-09 | 中国电子科技集团公司第十三研究所 | Feed circuit structure and test fixture |
| CN110727262B (en) * | 2019-10-31 | 2020-10-30 | 长春工大检测技术有限责任公司 | Up-down transmission mechanism for testing electronic control unit of automobile engine |
| CN113219216A (en) * | 2021-04-23 | 2021-08-06 | 华南理工大学 | Gallium nitride microwave transistor test fixture and working method thereof |
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