CN107171651B - Balance weight adjustable microstrip equalizer loaded with PIN diode - Google Patents

Balance weight adjustable microstrip equalizer loaded with PIN diode Download PDF

Info

Publication number
CN107171651B
CN107171651B CN201710485021.0A CN201710485021A CN107171651B CN 107171651 B CN107171651 B CN 107171651B CN 201710485021 A CN201710485021 A CN 201710485021A CN 107171651 B CN107171651 B CN 107171651B
Authority
CN
China
Prior art keywords
transmission line
pin diode
equalizer
loaded
resonance unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710485021.0A
Other languages
Chinese (zh)
Other versions
CN107171651A (en
Inventor
夏雷
覃丽容
刘伶
吕俊杰
李博
董君辰
张勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN201710485021.0A priority Critical patent/CN107171651B/en
Publication of CN107171651A publication Critical patent/CN107171651A/en
Application granted granted Critical
Publication of CN107171651B publication Critical patent/CN107171651B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G5/00Tone control or bandwidth control in amplifiers
    • H03G5/16Automatic control
    • H03G5/165Equalizers; Volume or gain control in limited frequency bands

Landscapes

  • Waveguide Connection Structure (AREA)

Abstract

The invention discloses an equalization adjustable microstrip equalizer loaded with a PIN diode; the dielectric substrate comprises a first metal layer, a dielectric substrate and a second metal layer which are sequentially laminated from top to bottom; the first metal layer comprises an input transmission line, a main transmission line and an output transmission line which are arranged along a straight line; a first resonance unit and a second resonance unit are respectively arranged at two ends of one side of the main transmission line, and a direct current bias circuit is arranged at the middle section of the other side of the main transmission line; the direct current bias circuit comprises a first bonding pad and a second bonding pad, and the second bonding pad is connected with a forward bias voltage. Based on a microstrip form, the invention utilizes the change relation of the resistance of the PIN diode along with the bias voltage, and changes the absorption resistance through the PIN diode, thereby realizing the adjustability of the equalizer in the equalizing amount, improving the temperature characteristic of the equalizer to a certain extent, simultaneously considering the requirements of miniaturization and low standing wave, and having the advantages of low tuning voltage, convenient tuning and small volume.

Description

Balance weight adjustable microstrip equalizer loaded with PIN diode
Technical Field
The invention belongs to the technical field of equalizer control, and particularly relates to an equalizing adjustable microstrip equalizer loaded with a PIN diode.
Background
The equalizer is mainly applied to modern radar electronic warfare, is connected to the input end or the output end of a high-power traveling wave tube, and plays a role of gain equalization (amplitude equalizer) or phase equalization (phase equalizer). The key is how to selectively absorb excess microwave energy without reflecting the energy back to the input port. The resistance is an energy absorption mechanism in the equalizer, mainly influences the attenuation characteristic of the curve of the equalizer, and the wave-absorbing material can be used for the energy absorption of the cavity type equalizer, but the attenuation quantity is difficult to accurately control, so that the fixed resistance is mainly used in engineering practice. The final equalization amount is higher or lower than the target value due to errors in resistance machining and assembly, and in addition, the output power of the MPM front-stage driving module is greatly changed along with the working temperature, and the temperature characteristic can be improved to a certain extent by changing the equalization amount of the equalizer, so that the secondary adjustment for realizing the attenuation of the equalizer has important use value.
Disclosure of Invention
The invention aims to: in order to solve the problems in the prior art, the invention provides an equalization adjustable microstrip equalizer loaded with a PIN diode.
The technical scheme of the invention is as follows: a balance weight adjustable microstrip equalizer loaded with a PIN diode comprises a first metal layer, a medium substrate and a second metal layer which are sequentially stacked from top to bottom; the first metal layer comprises an input transmission line, a main transmission line and an output transmission line which are arranged along a straight line; a first resonance unit and a second resonance unit are respectively arranged at two ends of one side of the main transmission line, and a direct current bias circuit is arranged at the middle section of the other side of the main transmission line; the first resonance unit and the second resonance unit have the same structure and respectively comprise a PIN diode and a microstrip branch connected with the main transmission line; one end of a micro-strip branch of the first resonance unit is connected with the first PIN diode, and the other end of the micro-strip branch is grounded through the metal through hole; one end of a micro-strip branch of the second resonance unit is connected with the second PIN diode, and the other end of the micro-strip branch is grounded through the metal through hole; the direct current bias circuit comprises a first bonding pad and a second bonding pad, and the second bonding pad is connected with a forward bias voltage.
Furthermore, an input matching branch and an output matching branch are respectively arranged at two ends of the other side of the main transmission line.
Furthermore, a first blocking capacitor is connected in series between the input transmission line and the input matching branch.
Furthermore, a second blocking capacitor is connected in series between the input transmission line and the output matching branch.
Furthermore, the microstrip branches of the first resonance unit and the second resonance unit are both of a folded bending structure.
Further, a first pad of the dc bias circuit is connected to the main transmission line, and the second pad is connected to the first pad through a choke inductor.
The invention has the beneficial effects that: the PIN diode loaded equalizing adjustable microstrip equalizer is based on a microstrip form, changes the absorption resistance through the PIN diode by utilizing the change relation of the resistance of the PIN diode along with the bias voltage, thereby realizing the equalizing adjustment of the equalizer, improving the temperature characteristic of the equalizer to a certain extent, simultaneously considering the requirements of miniaturization and low standing wave, and having the advantages of low tuning voltage, convenient tuning and small volume.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of the balanced adjustable microstrip equalizer loaded with the PIN diode according to the invention.
Fig. 2 is a schematic circuit topology diagram of the balanced adjustable microstrip equalizer loaded with the PIN diode according to the invention.
Fig. 3 is a schematic circuit structure diagram of a first metal layer of the balanced adjustable microstrip equalizer loaded with the PIN diode according to the present invention.
FIG. 4 is a diagram showing the test result of S21 in the example of the present invention.
FIG. 5 is a diagram showing the test result of S11 in the example of the present invention.
Wherein, 1, inputting the transmission line; 2. a first blocking capacitor; 3. inputting the matched branch knots; 4. a first resonance unit; 5. a main transmission line; 6. a DC bias circuit; 7. a second resonance unit; 8. outputting the matched branch knots; 9. a second blocking capacitor; 10. an output transmission line; 11. a first pad; 12. a choke inductance; 13. a second pad; 14. a metal via; 15. a first PIN diode; 16. a second PIN diode; 17. a first metal layer; 18. a dielectric substrate; 19. a second metal layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Fig. 1 is a schematic cross-sectional structure diagram of the balanced adjustable microstrip equalizer loaded with the PIN diode according to the present invention. A balance weight adjustable microstrip equalizer loaded with PIN diodes comprises a first metal layer 17, a dielectric substrate 18 and a second metal layer 19 which are sequentially stacked from top to bottom; to form the adjustable equalizer of the present invention, the first metal layer 17 is processed by the printed circuit board manufacturing process to form the desired metal pattern, and the second metal layer 19 is an unprocessed complete gold layer.
Fig. 2 is a schematic diagram of a circuit topology structure of the balanced adjustable microstrip equalizer loaded with the PIN diode according to the present invention. The first metal layer 17 of the present invention includes an input transmission line 1, a main transmission line 5 and an output transmission line 10 linearly arranged along a long side; a first resonance unit 4 and a second resonance unit 7 are respectively arranged at two ends of one side of the main transmission line 5, and a direct current bias circuit 6 is arranged at the middle section of the other side; the input matching branch 3 and the output matching branch 8 are respectively arranged at the two ends of the other side of the main transmission line 5 and used for adjusting port standing waves; a first blocking capacitor 2 is connected in series between the input transmission line 1 and the input matching branch 3, and a second blocking capacitor 9 is connected in series between the output transmission line 10 and the output matching branch 8 to achieve blocking.
The first resonance unit 4 and the second resonance unit 7 have the same structure and both comprise PIN diodes and microstrip branches connected with the main transmission line; one end of a micro-strip branch of the first resonance unit 4 is connected with the first PIN diode 15, and the other end of the micro-strip branch is grounded through the metal through hole 14; one end of a micro-strip branch of the second resonance unit 7 is connected with the second PIN diode 16, and the other end of the micro-strip branch is grounded through the metal through hole 14; the metal through hole 14 serves as both the radio frequency path ground in the resonant structure and the ground of the dc circuit; in order to reduce the length of the resonant unit, the microstrip branches of the first resonant unit 4 and the second resonant unit 7 are both of folded and bent structures.
The direct current bias circuit 6 of the present invention includes a first pad 11 and a second pad 13, and the second pad 13 is connected to a forward bias voltage. The first pad 11 of the dc bias circuit 6 is connected to the main transmission line 5, and the second pad 13 is connected to the first pad 11 through the choke inductor 12 for microwave signal isolation.
Fig. 3 is a schematic circuit structure diagram of the first metal layer of the balanced adjustable microstrip equalizer loaded with the PIN diode according to the present invention. The whole structure transmission line of the invention adopts a microstrip line, the dielectric substrate 18 adopts a Taconic RF-60(tm) substrate with the thickness of 0.635mm and the dielectric constant of 6.15, and the line widths w0 of the input transmission line 1 and the output transmission line 10 are 0.95 mm; the main transmission line 5 has a line width ws of 0.6mm and a length ls of 6.2 mm; the input matching branch 3 and the output matching branch 8 have the same size, dx is 1mm, dy is 0.8mm, d1 is 0.5mm, and d2 is 0.4 mm; the first resonance unit 4 and the second resonance unit 7 have the same size, pad _ w is 0.8mm, pad _ l is 0.8mm, w is 0.25mm, l1 is 0.8mm, l2 is 2.5mm, l3 is l5 is l7 is 0.7mm, l4 is l6 is l8 is 3.5mm, l9 is 1.2mm, l10 is 2.5mm, and a is b is 1 mm; the diameter d0 of the metal through-hole 14 is 0.5 mm. The first blocking capacitor 2 and the second blocking capacitor 9 adopt a 100pF capacitor packaged by 0402, the choke inductor 12 adopts LQW18AN13NJ00, and the inductance value is 13 nH. The first PIN diode 15 and the second PIN diode 16 are low-capacitance diodes SMP1302-040LF of SKYWORKS, and the corresponding bias voltage is about 600-650 mV. The size of the whole circuit is 15mm multiplied by 24 mm.
Fig. 4 is a schematic diagram showing the test result of S21 in the embodiment of the present invention, and fig. 5 is a schematic diagram showing the test result of S11 in the embodiment of the present invention. The balance-weight adjustable microstrip equalizer loaded with the PIN diode works at 2-6 GHz, the maximum attenuation value of a corresponding curve is increased from 5.8dB to 11.4dB, and the middle individual points of S11 except the bias voltage of 0.65V are slightly higher than-10 dB, and the rest are below-10 dB.
The working principle of the balance weight adjustable microstrip equalizer loaded with the PIN diode is as follows:
microwave signals are fed in from the input transmission line 1, and are transmitted on the main transmission line 5 after being subjected to impedance matching through the input matching branch 3; two resonance units (a first resonance unit 4 and a second resonance unit 7) are connected to the main transmission line 5, signals resonate on the first resonance unit 4 and the second resonance unit 7 and show a band stop characteristic, and a first PIN diode 15 and a second PIN diode 16 mainly show a resistance characteristic and are used for absorbing microwave energy; the microwave signal is output through the output transmission line 10 after being impedance matched by the output matching branch 8; the first DC blocking capacitor 2 and the second DC blocking capacitor 9 are used for blocking DC and alternating current, and the choke inductor 12 is used for blocking DC and alternating current; the first PIN diode 15 and the second PIN diode 16 are positively biased through the second bonding pad 13, and different resistance values can be obtained by adjusting the bias voltage of the first PIN diode and the second PIN diode, so that the effect of adjusting the attenuation amount is achieved.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.

Claims (5)

1. A balance weight adjustable microstrip equalizer loaded with a PIN diode is characterized by comprising a first metal layer (17), a dielectric substrate (18) and a second metal layer (19) which are sequentially stacked from top to bottom; the first metal layer (17) comprises an input transmission line (1), a main transmission line (5) and an output transmission line (10) which are arranged along a straight line; a first resonance unit (4) and a second resonance unit (7) are respectively arranged at two end positions of one side of the main transmission line (5), an input matching branch (3) and an output matching branch (8) are respectively arranged at two end positions of the other side of the main transmission line (5), and a direct current bias circuit (6) is arranged at the middle section position of the other side; the first resonance unit (4) and the second resonance unit (7) have the same structure and respectively comprise a PIN diode and a microstrip branch connected with the main transmission line (5); one end of a micro-strip branch of the first resonance unit (4) is connected with the first PIN diode (15), and the other end of the micro-strip branch is grounded through the metal through hole (14); one end of a micro-strip branch of the second resonance unit (7) is connected with the second PIN diode (16), and the other end of the micro-strip branch is grounded through the metal through hole (14); the direct current bias circuit (6) comprises a first bonding pad (11) and a second bonding pad (13), and the second bonding pad (13) is connected with a forward bias voltage.
2. The PIN diode-loaded equalization tunable microstrip equalizer according to claim 1, characterized in that a first blocking capacitor (2) is connected in series between the input transmission line (1) and the input matching stub (3).
3. The PIN diode-loaded equalization tunable microstrip equalizer of claim 1, wherein a second blocking capacitor (9) is connected in series between the output transmission line (10) and the output matching stub (8).
4. The PIN diode-loaded equalization tunable microstrip equalizer of claim 1, wherein the microstrip branches of the first resonant unit (4) and the second resonant unit (7) are both folded and bent structures.
5. The PIN diode-loaded scalable microstrip equalizer according to claim 1, wherein a first pad (11) of the DC bias circuit (6) is connected to the main transmission line (5), and wherein the second pad (13) is connected to the first pad (11) via a choke inductor (12).
CN201710485021.0A 2017-06-23 2017-06-23 Balance weight adjustable microstrip equalizer loaded with PIN diode Active CN107171651B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710485021.0A CN107171651B (en) 2017-06-23 2017-06-23 Balance weight adjustable microstrip equalizer loaded with PIN diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710485021.0A CN107171651B (en) 2017-06-23 2017-06-23 Balance weight adjustable microstrip equalizer loaded with PIN diode

Publications (2)

Publication Number Publication Date
CN107171651A CN107171651A (en) 2017-09-15
CN107171651B true CN107171651B (en) 2020-04-14

Family

ID=59820088

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710485021.0A Active CN107171651B (en) 2017-06-23 2017-06-23 Balance weight adjustable microstrip equalizer loaded with PIN diode

Country Status (1)

Country Link
CN (1) CN107171651B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108040024A (en) * 2017-12-04 2018-05-15 中国电子科技集团公司第四十研究所 A kind of ultra wide band electrically adjustable equalizer based on CSRR structures
CN109617618B (en) * 2019-01-31 2021-04-02 北京无线电测量研究所 Broadband photoelectric conversion circuit
CN110277617B (en) * 2019-07-02 2021-01-26 电子科技大学 Broadband miniaturized equalizer based on unequal hybrid bridge structure
CN111697994B (en) * 2020-06-24 2021-07-09 天津中科海高微波技术有限公司 Novel adjustable amplitude equalizer
CN112002975B (en) * 2020-08-27 2021-09-24 电子科技大学 Miniaturized equalizer based on double-helix resonator and defected ground structure
CN114374065B (en) * 2022-01-11 2023-03-31 陕西烽火诺信科技有限公司 Media-loaded X, ku waveband multi-branch equalizer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185573A (en) * 2011-03-11 2011-09-14 京信通信系统(中国)有限公司 Circuit of electric-tuning gain equalizer
CN202696648U (en) * 2012-07-13 2013-01-23 四川九洲电器集团有限责任公司 Adjustable millimeter wave power equalizer
CN105140086A (en) * 2015-09-10 2015-12-09 电子科技大学 Miniature power gain balancer based on dual-mode resonator
CN106252181A (en) * 2016-08-29 2016-12-21 电子科技大学 Miniaturization equalizer based on LCP technology
CN106356606A (en) * 2016-08-30 2017-01-25 电子科技大学 Miniaturized phase shifting equalizer based on Wilkinson power divider

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205335217U (en) * 2016-01-11 2016-06-22 中国电子科技集团公司第十研究所 Compact microstrip gainequalizer
CN105655674B (en) * 2016-03-24 2018-11-30 成都九洲迪飞科技有限责任公司 The adjustable microstrip filter of zero point

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185573A (en) * 2011-03-11 2011-09-14 京信通信系统(中国)有限公司 Circuit of electric-tuning gain equalizer
CN202696648U (en) * 2012-07-13 2013-01-23 四川九洲电器集团有限责任公司 Adjustable millimeter wave power equalizer
CN105140086A (en) * 2015-09-10 2015-12-09 电子科技大学 Miniature power gain balancer based on dual-mode resonator
CN106252181A (en) * 2016-08-29 2016-12-21 电子科技大学 Miniaturization equalizer based on LCP technology
CN106356606A (en) * 2016-08-30 2017-01-25 电子科技大学 Miniaturized phase shifting equalizer based on Wilkinson power divider

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Miniaturized microstrip equalizer based on SCRLH ZOR;Q.Y. Yang et al;《2014 IEEE International Conference on Communiction Problem-solving》;20141207;603-606 *
微波与毫米波增益均衡及放大技术研究;周太富;《中国优秀硕士学位论文全文数据库信息科技辑》;20130731(第7期);第17页第1段-第4段及图2-14 *

Also Published As

Publication number Publication date
CN107171651A (en) 2017-09-15

Similar Documents

Publication Publication Date Title
CN107171651B (en) Balance weight adjustable microstrip equalizer loaded with PIN diode
US9112458B2 (en) Wideband Doherty amplifier
KR100883529B1 (en) Power divider and power combiner using dual band - composite right / left handed transmission line
CN107453727B (en) Low-insertion-loss negative group time delay microwave circuit
JP6280985B2 (en) Compact wireless directional coupler for cellular applications
CN1925211B (en) Half-modular substrate integral wave guide filter
CN107508572B (en) Broadband negative group time delay microwave circuit based on distributed parameter realization
US9318788B2 (en) Directional coupler
CN107395148A (en) A kind of temperature compensation equalizing circuit of TR components
CN109639243B (en) F-class power amplifier based on coupling loop resonant network
JP2015084469A (en) High-frequency circuit module
US8686790B2 (en) Distributed amplifier for band pass radio front-end
CN105186080A (en) Half-mode substrate integrated waveguide band-pass filter
CN111817670A (en) C-waveband ultra-wideband high-gain low-noise amplifier chip
CN107317076B (en) PIN tube loading frequency adjustable equalizer
CN103972625A (en) MIC attenuator applied to DC and ultrahigh frequency
CN105846026A (en) Lumped structure microwave amplitude equalizer
CN105161810A (en) Low temperature co-fired ceramic (LTCC) miniature power gain equalizer based on composite right/left-handed structure
CN110350874B (en) Microstrip power amplifier with harmonic suppression capability
CN110265752B (en) X-band dielectric wave conductive tuning microwave equalizer
CN200950464Y (en) Semi-module substrate integrated waveguide filter
CN107425251B (en) Mirror power synthesis method based on planar circuit board
CN215869737U (en) IPD-based high-balance-degree broadband balun
JP2017169200A (en) Directional coupler and power splitter made therefrom
KR20090095741A (en) Integrated active antenna

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant