CN102185573A - Circuit of electric-tuning gain equalizer - Google Patents
Circuit of electric-tuning gain equalizer Download PDFInfo
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- CN102185573A CN102185573A CN2011100580041A CN201110058004A CN102185573A CN 102185573 A CN102185573 A CN 102185573A CN 2011100580041 A CN2011100580041 A CN 2011100580041A CN 201110058004 A CN201110058004 A CN 201110058004A CN 102185573 A CN102185573 A CN 102185573A
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- 239000003990 capacitor Substances 0.000 description 6
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Abstract
The invention provides a circuit of an electric-tuning gain equalizer and aims to solve the problem that the prior art cannot compensate gain flatness by electric-tuning change, so debugging is difficult, and cost is high. The circuit of an electric-tuning gain equalizer comprises three sections of lamda/4 microstrip lines, four varactors and a voltage VCC, wherein the first section of lamda/4 microstrip line is connected between RFin and RFout, the voltage VCC is connected onto the first section of lamda/4 microstrip line; two ends of the first section of lamda/4 microstrip line are respectively connected with the second section of lamda/4 microstrip line and the third section of lamda/4 microstrip line, and two varactors, which ground respectively, are parallelly connected with each end of the second section of and the third section of lamda/4 microstrip line. The equalizer circuit of the invention adopts varactors, and utilizes that characteristic that reactance of the varactor changes along with changes of reverse voltage, so gain flatness curve can be changed by electric tuning, consistency is good, debugging is agile, and time cost and material cost is saved.
Description
Technical field
The present invention relates to radio-frequency technique design field in the mobile communication system, relate in particular to a kind of electricity and transfer the gainequalizer circuit.
Background technology
At some present high-power, high-gain power amplifier links, especially on feedforward or AAP power amplifier, because the power amplifier link is long, used chamber shell is bigger, gain flatness changed greatly in thereby the influence that the gain fluctuation of finding power amplifier when producing in batches is out of shape by link or chamber shell easily caused being with, and had influenced debugging efficiency greatly.If can on link, add the circuit of a gainequalizer, make this circuit when debugging, can be according to the situation of gain flatness in the original tape, change the gain curve of gainequalizer, make it in certain frequency range, produce an opposite gain curve, so just can reach the effect of gain flatness in the compensating band.
As shown in Figure 1, be abscissa with the frequency, gain to one having three curves in the reference axis of ordinate, wherein, the curve of positive slope is the power amplifier curve, the gain of power amplifier increases along with the rising of frequency; The compensated curve of equalizer curve for needing to add, its gain reduces along with the rising of frequency; If these two devices are placed on the same radio frequency link, its gain flatness (the VS frequency curve promptly gains) will become smooth, becomes the horizontal linear state of " balanced back curve ".For example, a power amplifier is 1dB at the gain flatness of 930MHz ~ 960MHz, and be the positive slope curve, transfer gainequalizer if be connected in series an electricity so in front, make that the gain curve of this equalizer in 930MHz ~ 960MHz frequency band is negative slope trend, and gain flatness is-1dB in its band, so just can be so that the gain size of whole radio frequency link is consistent in working band, thus also just compensated gain flatness.
In the prior art,, often adopt traditional link matching and debugging method for the compensating gain flatness.Promptly on radio frequency link, add electric capacity or inductance, make under the prerequisite that does not influence these other radio-frequency performances of link, improve its gain flatness.But adopt this method, debugging difficulty is big, and the bad grasp of consistency, can not flexible Application.
In addition, application number is that 200920057150.0 application documents disclose a kind of gainequalizer, and this equalizer adopts coupler, and on coupler circuit, load suitable resistance capacitance, realized frequency adjustable, it is adjustable to decay, and has reached the effect of compensating gain flatness.But such scheme belongs to the circuit that non-electricity is transferred gainequalizer, the shortcoming of sort circuit is exactly will change compensated curve at every turn, coming this equalizer is debugged again with regard to upgrading corresponding resistance capacitance, therefore is all not calculate very much at time cost or on material cost.
And, no matter the gainequalizer that is to use traditional link matching and debugging method or uses non-electricity to transfer will be realized gain balance, just must weld debugging to circuit by flatiron, very trouble operates.
Summary of the invention
For addressing the above problem, the invention provides a kind of electricity and transfer the gainequalizer circuit, can change gain flatness curve, compensating gain flatness better by " electricity is transferred ".
A kind of electricity of the present invention is transferred the gainequalizer circuit, comprising: first section
/ 4 microstrip lines, second section
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines, first variable capacitance diode, second variable capacitance diode, the 3rd variable capacitance diode, the 4th variable capacitance diode and voltage VCC, described first section
/ 4 microstrip lines are connected between RFin and the RFout, and described voltage VCC is connected described first section
On/4 microstrip lines; At described first section
Two end points places of/4 microstrip lines connect described second section respectively
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines are at described second section
Described first variable capacitance diode terminal in parallel and second variable capacitance diode of/4 microstrip lines are at described the 3rd section
Described the 3rd variable capacitance diode terminal in parallel and the 4th variable capacitance diode of/4 microstrip lines, described first variable capacitance diode, second variable capacitance diode, the 3rd variable capacitance diode, the 4th variable capacitance diode be ground connection respectively.
The present invention also provides another electricity to transfer the gainequalizer circuit, comprising: first section
/ 4 microstrip lines, second section
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines, first variable capacitance diode, second variable capacitance diode, first electric capacity, second electric capacity, first resistance, second resistance and voltage VCC, described first section
/ 4 microstrip lines are connected between RFin and the RFout, and described voltage VCC is connected described first section
On/4 microstrip lines; At described first section
Two end points places of/4 microstrip lines connect described second section respectively
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines; Described first electric capacity and first resistance polyphone back are connected in parallel on described second section with first variable capacitance diode
The end of/4 microstrip lines, described second electric capacity and second resistance polyphone back are connected in parallel on described the 3rd section with second variable capacitance diode
The end of/4 microstrip lines, described first variable capacitance diode, second variable capacitance diode, first resistance, second resistance is ground connection respectively.
From above scheme as can be seen, because being electricity, the present invention transfers gainequalizer, the engineer is according to the gain curve of power amplifier, only need to change the reverse voltage of variable capacitance diode, the gain curve of making in contrast compensates, just can reach the effect of balanced whole system gain flatness, thereby make the gain of power amplifier that better consistency be arranged in working frequency range, save debug time in a large number.Circuit of the present invention does not in addition need by flatiron circuit to be welded debugging, and debugging is flexible, and it is more succinctly convenient to operate, and has also reduced material cost to a certain extent.
Description of drawings
Fig. 1 is a gainequalizer effect schematic diagram;
Fig. 2 is that the electricity in the specific embodiment one is transferred the gainequalizer circuit theory diagrams;
Fig. 3 is that the electricity in the specific embodiment two is transferred the gainequalizer circuit theory diagrams;
Fig. 4 is that the electricity in the specific embodiment three is transferred the gainequalizer circuit theory diagrams;
Fig. 5 is adjustable range and the port standing wave effect schematic diagram that electricity of the present invention is transferred gainequalizer.
Embodiment
The invention provides a kind of electricity and transfer the gainequalizer circuit, thereby this circuit can solve in the prior art when the compensating gain flatness can't electricity to adjust and reform to become and causes the problem that debugging difficulty is big, cost is high.Below by specific embodiment, technical scheme of the present invention is further described.
Embodiment one
As shown in Figure 2, a kind of electricity of the present invention is transferred the gainequalizer circuit, comprising: first section
/ 4 microstrip lines, second section
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines, the first variable capacitance diode V1, the second variable capacitance diode V2, the 3rd variable capacitance diode V3, the 4th variable capacitance diode V4 and voltage VCC, described first section
/ 4 microstrip lines are connected between RFin and the RFout, and described voltage VCC is connected described first section
On/4 microstrip lines; At described first section
Two end points places of/4 microstrip lines (be node 1. with node 2.) be connected described second section respectively
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines are at described second section
The described first variable capacitance diode V1 terminal in parallel and the second variable capacitance diode V2 of/4 microstrip lines are at described the 3rd section
Described the 3rd variable capacitance diode V3 terminal in parallel and the 4th variable capacitance diode V4 of/4 microstrip lines, the described first variable capacitance diode V1, the second variable capacitance diode V2, the 3rd variable capacitance diode V3, the 4th variable capacitance diode V4 be ground connection respectively.
Voltage VCC is used for to being welded on second section
/ 4 microstrip lines and the 3rd section
Four variable capacitance diodes altogether on/4 microstrip lines provide reverse voltage; Three sections
The effect of/4 microstrip lines is identical, all is used to provide the phase shift of 90 degree; This circuit is selected variable capacitance diode for use, is to have utilized the junction capacitance of variable capacitance diode can be according to the difference of reverse voltage and the characteristic that changes within the specific limits.Because there is lead-in inductance in variable capacitance diode itself, like this, lead-in inductance and junction capacitance just can constitute a series resonant circuit, gain curve according to power amplifier, when changing the reverse voltage that voltage VCC provides, the junction capacitance of variable capacitance diode will change, so the position of the resonance frequency of this variable capacitance diode also can change, thereby obtain the compensating gain curve opposite with the gain curve of power amplifier, when both are superimposed, then reach the effect of gain flatness in the compensating band.
The present invention can regard a kind of " two detail microstrip line electricity are transferred the gainequalizer circuit " that is combined by two duplicate " single detail microstrip line electricity is transferred the gainequalizer circuit " as, when radiofrequency signal enters into node 1. the time from RFin, signal is divided into two-way, one the tunnel enters first single Zhi Jiedian transfers the gainequalizer circuit, and other one the tunnel enters primary path
/ 4 microstrip lines.When primary path
Signal on/4 microstrip lines is transferred to node 2. the time, is further divided into two-way, and one the road flows to second single Zhi Jiedian modulation equalizer, and one the road flows to output RFout.The signal reflex that wherein flows to second single Zhi Jiedian modulation equalizer is returned and is divided into two-way, and one the road flows to output RFout, and 1. another road flows to node.Wherein flow to node that a part of signal 1. owing on the transmission distance, passed through back and forth
/ 4 microstrip lines are compared with the signal that first single Zhi Jiedian modulation equalizer reflects, and transmission range is many
/ 2, so the two phase phasic difference 180 degree, because two element circuits are just the same, therefore the signal amplitude that reflects on input is identical, and phase phasic difference 180 degree are almost completely offset, and just can improve the port standing wave by a relatively large margin.Simultaneously owing to used two single detail amplitude equalizers, about its balanced scope also will be twice than a single detail gainequalizer.
Radiofrequency signal is from RFin port input, from the output of RFout port, the microstrip line between the primary path RFin to RFout (RFin---node 1.---node 2.---RFout) impedance must be consistent with load impedance.1. 2. draw respectively with node from node two sections
/ 4 microstrip line circuit are just the same, and these two and the microstrip line circuit symmetrical that connects are consistent, and could guarantee like this that 1. signal power that two details reflect goes up fully at node to offset, and carry out power stack back output at node on 2..This circuit has the effect of two the balanced amplitude range stack of single Zhi Jiedian accent gainequalizer sums, and the port standing wave also has clear improvement than a single Zhi Jiedian modulation equalizer.
Embodiment two
The difference of present embodiment and the foregoing description one mainly is, replaces one of them variable capacitance diode among the embodiment one with the series circuit of electric capacity and resistance in the present embodiment.As shown in Figure 3, a kind of electricity of present embodiment is transferred the gainequalizer circuit, comprising: first section
/ 4 microstrip lines, second section
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines, the first variable capacitance diode V1, the second variable capacitance diode V2, first capacitor C 1, second capacitor C 2, first resistance R 1, second resistance R 2 and voltage VCC, described first section
/ 4 microstrip lines are connected between RFin and the RFout, and described voltage VCC is connected described first section
On/4 microstrip lines; At described first section
Two end points places of/4 microstrip lines (be node 1. with node 2.) be connected described second section respectively
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines; Described first capacitor C 1 and first resistance R, 1 polyphone back are connected in parallel on described second section with the first variable capacitance diode V1
The end of/4 microstrip lines, described second capacitor C 2 and second resistance R, 2 polyphone backs are connected in parallel on described the 3rd section with the second variable capacitance diode V2
The end of/4 microstrip lines, the described first variable capacitance diode V1, the second variable capacitance diode V2, first resistance R 1, second resistance R 2 be ground connection respectively.
Identical with embodiment one, voltage VCC provide reverse voltage to variable capacitance diode, gain curve according to power amplifier, when changing described reverse voltage, thereby the gain curve that the position of resonance frequency changes and is compensated, because the gain curve of this compensation and the gain curve of former power amplifier are on the same link, therefore can reach the effect of gain flatness in the compensating band.
Identical with embodiment one, 1. 2. draw respectively with node from node two sections
/ 4 microstrip line circuit are just the same, and these two and the microstrip line circuit symmetrical that connects are consistent, and could guarantee like this that 1. signal power that two details reflect goes up fully at node to offset, and carry out power stack back output at node on 2..Other technologies feature in the present embodiment and concrete operation principle are identical with the description among the embodiment one, do not repeat them here.
Embodiment three
As a preferred embodiment, electricity of the present invention is transferred the gainequalizer circuit, on the basis of embodiment one or embodiment two, can also increase some other device.As shown in Figure 4, on the circuit base in embodiment one (can certainly serve as that following device is added on the basis) with embodiment two, when the resonance frequency of selected several variable capacitance diodes too high, do not drop on the words in our the required working frequency range, electricity at this time of the present invention is transferred the gainequalizer circuit, also need to comprise first inductance L 1, second inductance L 2, the 3rd inductance L 3, the 4th inductance L 4, described first inductance L 1 is serially connected between described first variable capacitance diode V1 and the earthing device, described second inductance L 2 is serially connected between described second variable capacitance diode V2 and the earthing device, described the 3rd inductance L 3 is serially connected between described the 3rd variable capacitance diode V3 and the earthing device, described the 4th inductance L 4 is serially connected between described the 4th variable capacitance diode V4 and the earthing device, makes the resonance range of each variable capacitance diode move to low frequency.(if add inductance on the basis of embodiment two, then the circuit of the present invention among this embodiment only need comprise two inductance, is serially connected between each variable capacitance diode and the earthing device.）
As an embodiment preferably, circuit of the present invention can also comprise a resistance R 3, and this resistance R 3 is serially connected in described first section
Between/4 microstrip lines and the voltage VCC.The main effect of R1 is to make voltage VCC could give by this resistance to be welded on
Each variable capacitance diode on/4 microstrip lines provides reverse voltage, but the resistance value of this resistance R 3 must be bigger, preferably more than 1k Ω, so just can make
Radiofrequency signal on/4 microstrip lines can not be leaked in the supply line of voltage VCC.
In addition, can also comprise two capacitor C 3 and C4 in the circuit of the present invention, as shown in Figure 4, one of them electric capacity (C3) is serially connected in RFin port and first section
Between/4 microstrip lines (say so accurately RFin and node 1. between), another one electric capacity (C4) then is serially connected in first section
Between/4 microstrip lines and the RFout (node 2. and between the RFout).These two electric capacity are capacitance, have logical the interchange, the function of resistance direct current, and choosing of capacitor's capacity size is relevant with working frequency range.The effect of two electric capacity in the present embodiment is in order to prevent two port RFin and the RFout of voltage VCC through to input and output, because if the straight-through words in the past of voltage might cause damage to the device beyond this circuit.
Below comparatively detailed description the operation principle of circuit of the present invention, it is right to need in concrete frequency range
/ 4 microstrip lines design accordingly, and choose different variable capacitance diodes, in conjunction with the layout plate figure of PCB and with the variable capacitance diode position, perhaps series-parallel resistance, electric capacity, inductance are debugged.Therefore, circuit on frequency ranges such as 869 ~ 894MHz, 925 ~ 960MHz, 1805 ~ 1880MHz, 1930 ~ 1990MHz, 2110 ~ 2170MHz, under the condition that the layout of PCB determines, above-mentioned variable capacitance diode, resistance, electric capacity and inductance are debugged according to actual conditions and are finally determined to choose.
Utilize above principle, we carry out the PCB design on 869MHz ~ 894MHz frequency range, choose through rational layout and correct device, test after debugging successfully, experimental result as shown in Figure 5, from the first half of Fig. 5 as can be seen, the electricity of the two detail microstrip lines designs of use of the present invention is transferred the gainequalizer circuit, and the maximal positive slope of equalizer is regulated can reach 1.7dB; And from the latter half equalizer port standing wave of the present invention as can be seen can reach especially-below the 21dB.Therefore, if there is surplus in the PCB layout space, requiring in change in gain can not be too big, improve under the prerequisite of port standing wave, and radio frequency link can adopt circuit structure of the present invention to realize the purpose of gain flatness in the compensating band.
From above several embodiment as can be seen, the present invention adopts the combination of lamped elements such as microstrip line and variable capacitance diode to realize the function that gain flatness in certain frequency range can " electricity be transferred ".In circuit of the present invention, the lumped parameter characteristic of utilizing variable capacitance diode changes with the change of reverse voltage, adopt a plurality of diodes in parallel or diode and lamped element carried out connection in series-parallel after, straight-through and the reflection characteristic of its element circuit on radio-frequency performance, and utilize the microstrip line impedance the connection in series-parallel characteristic and
The characteristic of/4 microstrip line phase shifts 90 degree, on Smith chart, carry out matching Design, thereby on radio frequency link, form the resonance point of certain trap amplitude, and the position of this resonance point changes with the change of the reverse bias voltage of diode, reach the function that to regulate the gain flatness of certain bandwidth in the following frequency range of 3GHz, make the gain flatness of this integrated circuit in certain frequency range be optimized.
Electricity of the present invention is transferred the gainequalizer circuit, be mainly used in communication equipments such as the repeater in wireless mobile communications field and base station power amplifier, especially it is longer to be fit to radio frequency link, the power amplification system of the complexity that the gain flatness index is difficult to be consistent when interior gain flatness of debugging band and batch process.
Claims (7)
1. an electricity is transferred the gainequalizer circuit, it is characterized in that, comprising: first section
/ 4 microstrip lines, second section
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines, first variable capacitance diode, second variable capacitance diode, the 3rd variable capacitance diode, the 4th variable capacitance diode and voltage VCC, described first section
/ 4 microstrip lines are connected between RFin and the RFout, and described voltage VCC is connected described first section
On/4 microstrip lines; At described first section
Two end points places of/4 microstrip lines connect described second section respectively
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines are at described second section
Described first variable capacitance diode terminal in parallel and second variable capacitance diode of/4 microstrip lines are at described the 3rd section
Described the 3rd variable capacitance diode terminal in parallel and the 4th variable capacitance diode of/4 microstrip lines, described first variable capacitance diode, second variable capacitance diode, the 3rd variable capacitance diode, the 4th variable capacitance diode be ground connection respectively.
2. an electricity is transferred the gainequalizer circuit, it is characterized in that, comprising: first section
/ 4 microstrip lines, second section
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines, first variable capacitance diode, second variable capacitance diode, first electric capacity, second electric capacity, first resistance, second resistance and voltage VCC, described first section
/ 4 microstrip lines are connected between RFin and the RFout, and described voltage VCC is connected described first section
On/4 microstrip lines; At described first section
Two end points places of/4 microstrip lines connect described second section respectively
/ 4 microstrip lines, the 3rd section
/ 4 microstrip lines; Described first electric capacity and first resistance polyphone back are connected in parallel on described second section with first variable capacitance diode
The end of/4 microstrip lines, described second electric capacity and second resistance polyphone back are connected in parallel on described the 3rd section with second variable capacitance diode
The end of/4 microstrip lines, described first variable capacitance diode, second variable capacitance diode, first resistance, second resistance is ground connection respectively.
3. electricity according to claim 1 is transferred the gainequalizer circuit, it is characterized in that, also comprise first inductance, second inductance, the 3rd inductance, the 4th inductance, described first inductance is serially connected between described first variable capacitance diode and the earthing device, described second inductance is serially connected between described second variable capacitance diode and the earthing device, described the 3rd inductance is serially connected between described the 3rd variable capacitance diode and the earthing device, and described the 4th inductance is serially connected between described the 4th variable capacitance diode and the earthing device.
4. electricity according to claim 2 is transferred the gainequalizer circuit, it is characterized in that, also comprise first inductance, second inductance, described first inductance is serially connected between described first variable capacitance diode and the earthing device, and described second inductance is serially connected between described second variable capacitance diode and the earthing device.
5. electricity according to claim 1 and 2 is transferred the gainequalizer circuit, it is characterized in that also comprise resistance, described resistance string is connected on described first section
Between/4 microstrip lines and the described voltage VCC.
6. electricity according to claim 5 is transferred the gainequalizer circuit, it is characterized in that the resistance at least 1 k Ω of described resistance.
7. electricity according to claim 5 is transferred the gainequalizer circuit, it is characterized in that, also comprises two electric capacity, and described two electric capacity are serially connected in RFin and described first section respectively
Between/4 microstrip lines and described first section
Between/4 microstrip lines and the RFout.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110058004.1A CN102185573B (en) | 2011-03-11 | 2011-03-11 | Circuit of electric-tuning gain equalizer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110058004.1A CN102185573B (en) | 2011-03-11 | 2011-03-11 | Circuit of electric-tuning gain equalizer |
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| CN102185573B CN102185573B (en) | 2014-02-05 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972632A (en) * | 2014-05-23 | 2014-08-06 | 大连海事大学 | Frequency-tunable micro-strip crossing directional coupler |
| CN105721362A (en) * | 2015-12-18 | 2016-06-29 | 航天恒星科技有限公司 | Amplitude equalizer |
| CN107171651A (en) * | 2017-06-23 | 2017-09-15 | 电子科技大学 | Load the adjustable Microstrip equalizer of equilibrium quantity of PIN diode |
| CN107317076A (en) * | 2017-07-05 | 2017-11-03 | 电子科技大学 | PIN pipe loading frequency adjustable equalizers |
| CN109039288A (en) * | 2018-07-27 | 2018-12-18 | 成都仕芯半导体有限公司 | Tunable gain equalizer |
| CN110311645A (en) * | 2019-05-28 | 2019-10-08 | 西安空间无线电技术研究所 | A kind of electric modulation balanced device of novel topological structure |
| CN112311345A (en) * | 2020-10-31 | 2021-02-02 | 拓维电子科技(上海)有限公司 | Adjustable gain equalizer |
| CN117335766A (en) * | 2023-12-01 | 2024-01-02 | 成都世源频控技术股份有限公司 | Ultra-wideband radio frequency equalizer structure |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972632B (en) * | 2014-05-23 | 2017-02-08 | 大连海事大学 | Frequency-tunable micro-strip crossing directional coupler |
| CN103972632A (en) * | 2014-05-23 | 2014-08-06 | 大连海事大学 | Frequency-tunable micro-strip crossing directional coupler |
| CN105721362A (en) * | 2015-12-18 | 2016-06-29 | 航天恒星科技有限公司 | Amplitude equalizer |
| CN105721362B (en) * | 2015-12-18 | 2023-11-03 | 航天恒星科技有限公司 | Amplitude equalizer |
| CN107171651B (en) * | 2017-06-23 | 2020-04-14 | 电子科技大学 | Balance weight adjustable microstrip equalizer loaded with PIN diode |
| CN107171651A (en) * | 2017-06-23 | 2017-09-15 | 电子科技大学 | Load the adjustable Microstrip equalizer of equilibrium quantity of PIN diode |
| CN107317076A (en) * | 2017-07-05 | 2017-11-03 | 电子科技大学 | PIN pipe loading frequency adjustable equalizers |
| CN109039288B (en) * | 2018-07-27 | 2022-04-19 | 成都仕芯半导体有限公司 | Adjustable gain equalizer |
| CN109039288A (en) * | 2018-07-27 | 2018-12-18 | 成都仕芯半导体有限公司 | Tunable gain equalizer |
| CN110311645A (en) * | 2019-05-28 | 2019-10-08 | 西安空间无线电技术研究所 | A kind of electric modulation balanced device of novel topological structure |
| CN110311645B (en) * | 2019-05-28 | 2023-03-31 | 西安空间无线电技术研究所 | Novel topological structure's electricity modulation amplitude equalizer |
| CN112311345A (en) * | 2020-10-31 | 2021-02-02 | 拓维电子科技(上海)有限公司 | Adjustable gain equalizer |
| CN112311345B (en) * | 2020-10-31 | 2023-03-10 | 拓维电子科技(上海)有限公司 | Adjustable gain equalizer |
| CN117335766A (en) * | 2023-12-01 | 2024-01-02 | 成都世源频控技术股份有限公司 | Ultra-wideband radio frequency equalizer structure |
| CN117335766B (en) * | 2023-12-01 | 2024-03-26 | 成都世源频控技术股份有限公司 | Ultra-wideband radio frequency equalizer structure |
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