CN105789802A - Ultra-wideband Balun based on new interconnection structure - Google Patents
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Abstract
The present invention provides an ultra-wideband Balun based on a new interconnection structure. The ultra-wideband Balun includes a rectangular dielectric substrate. A T-junction power divider, a coplanar stripline, a two-port output terminal microstrip band, and a three-port output terminal microstrip band are arranged on the front of the dielectric substrate. A two-port output terminal microstrip floor, a three-port output terminal microstrip floor, a coplanar wave guide, and an input terminal microstrip floor are arranged on the back of the dielectric substrate. Multiple round metal through holes are arranged inside the dielectric substrate and are used for connecting devices on the front and back of the dielectric substrate. The ultra-wideband Balun based on the new interconnection structure has a small size, a compact circuit structure, low insertion loss, and a good output port matching feature.
Description
Technical Field
The invention belongs to the technical field of microwave passive devices, and particularly relates to an ultra-wideband balun based on a novel interconnection structure.
Background
In the field of antennas, dipole antennas belong to balanced antennas, so that a balun is required to convert an unbalanced signal into a balanced signal to feed the balanced antenna. The balun is a balanced-to-unbalanced converter and can provide a constant-amplitude reverse signal and realize impedance matching. At present, the most common signal transmission line in the microwave integrated circuit is a microstrip line, unbalanced signals are transmitted, and the coplanar waveguide and the coplanar stripline are single-sided transmission lines, so that the microwave integrated circuit has the characteristics of small size, easiness in integration, convenience in realizing a broadband interconnection structure with a microstrip structure and the like. Based on the background, the ultra-wideband balun with low loss, small size and better port matching performance is realized by adopting the microstrip line-coplanar waveguide and the microstrip line-coplanar stripline.
The structure of ultra-wideband balun has been reported in the literature:
document 1 (vicetgonz lez-posaas, carlos Mart i n-Pascual, Jos e LuisJim e nez-Mart i n, and daniel segovia-Vargas, Lumped-elementbalun for uhf wideband printed circuit board, ieeetransactionsonaanddpropagation, 2008,56, (7): 2102-) 2107) uses capacitive and inductive in high-pass cell and low-pass cell structures, respectively, to obtain the phase reversal characteristics of the two output ports by appropriate parallel measures, but this balun is based on a semi-Lumped element implementation, is difficult to achieve, and has large insertion loss.
In document 2(PengWu, YongZhang, Yu-LiangDong, andQinZhang, AnovelKa-bandPLANArbunningmicrostrip-CPS-microstrip transition, eemicrowavewirelesson company, lett, 2011,21, (3):136-138), a broadband balun is realized by using an interconnection structure of two symmetrical microstrip lines and coplanar strip lines, but the size of the balun is relatively large and the structure is relatively complex.
In document 3(JinShao, Rongguo Zhou, ChangChen, Xiao-HuaWang, HyoungsoKim, and HualiangZhang, Designofawidebandbasilingparallelstrips, IEEEMicrowaveWirelessCompone, Lett.,2013,23, (3): 125-.
To sum up, the balun designed in the document 1 adopts a semi-lumped element implementation manner, so that the loss of the lumped element in the millimeter wave band is high and the circuit is inconvenient to process; (2) the broadband balun designed in the document 2 is large in size and complex in structure; (3) the broadband balun designed in document 3 has a disadvantage of large size.
Disclosure of Invention
The invention aims to provide an ultra-wideband balun which is small in size, compact in circuit structure, low in insertion loss and good in output port matching characteristic based on a novel interconnection structure.
In order to solve the technical problem, the invention provides an ultra wide band balun based on a novel interconnection structure, which comprises a rectangular dielectric substrate; the front surface of the dielectric substrate is provided with a T-shaped junction power divider, a coplanar stripline, a two-port output end microstrip conduction band and a three-port output end microstrip conduction band; the back side of the dielectric substrate is provided with a two-port output end microstrip line floor, a three-port output end microstrip line floor, a coplanar waveguide and an input end microstrip line floor; a plurality of circular metal through holes are formed in the medium substrate and are used for connecting devices on the front side and the back side of the medium substrate.
Preferably, the T-shaped junction power divider is composed of a T-shaped junction microstrip line conduction band parallel to the short edge of the dielectric substrate and an input end microstrip line conduction band vertical to the T-shaped junction microstrip line conduction band; one end of the input end microstrip line conduction band is positioned at the edge of the short side of the dielectric substrate; the center of the T-shaped junction microstrip line conduction band is positioned on a central axis parallel to the long edge of the dielectric substrate, one end of the T-shaped junction microstrip line conduction band is connected with the coplanar stripline, and the other end of the T-shaped junction microstrip line conduction band is connected with a circular metal through hole and is connected with the coplanar waveguide through the circular metal through hole.
Preferably, the two-port output end microstrip line conduction band and the three-port output end microstrip line conduction band are both perpendicular to the narrow edge of the dielectric substrate, and one end of each conduction band is located at the edge of the narrow edge of the dielectric substrate; the other end of the microstrip conduction band at the two-port output end is connected with the coplanar stripline, and the other end of the microstrip conduction band at the three-port output end is simultaneously connected with the two circular metal through holes and is connected with the coplanar waveguide through the two circular metal through holes.
Preferably, the coplanar strip line comprises two parallel microstrip line conduction bands, wherein two ends of one microstrip line conduction band are respectively connected with the two circular metal through holes and are respectively connected with the microstrip line floor at the output end of the medium port and the microstrip line floor at the input end through the circular metal through holes; one end of the other microstrip line conduction band in the coplanar strip line is connected with the microstrip line conduction band at the output end of the two ports, and the other end of the other microstrip line conduction band is connected with the T-shaped junction power divider.
Preferably, the input end microstrip line floor is rectangular, three sides of the input end microstrip line floor are located on three sides of the dielectric substrate, and the other side of the input end microstrip line floor is connected with the floor of the coplanar waveguide.
Preferably, the two-port output microstrip line floor is rectangular, the central axis of the two-port output microstrip line floor is overlapped with the central axis of the coplanar stripline, and the two-port output microstrip line floor is connected with one conduction band of the coplanar stripline through a metal through hole.
Preferably, the three-port output microstrip line floor is rectangular, and the central axis of the three-port output microstrip line floor coincides with the central axes of the three-port output microstrip line conduction band and the coplanar waveguide.
Preferably, one end of the signal line of the coplanar waveguide is connected with the three-port output end microstrip line ground plate, the other end of the signal line of the coplanar waveguide is connected with the microstrip line conduction band through one metal through hole, one end of the ground plate of the coplanar waveguide is connected with the input end microstrip line ground plate, and the other end of the ground plate of the coplanar waveguide is connected with the three-port output end microstrip line conduction band through two metal through holes.
Preferably, the relative dielectric constant of the dielectric substrate is 3.38, and the thickness is 0.508 mm; the characteristic impedance of the input microstrip line is 50 ohms, and the width is 1.05 mm; the characteristic impedance of the two-port output end microstrip line and the three-port output end microstrip line is 75 ohms, and the width of the two-port output end microstrip line and the three-port output end microstrip line is 0.3 mm; the length L3 of the coplanar stripline is 4.2mm, and the groove width is 0.17 mm; the length of a signal line of the coplanar waveguide is 2.4mm, and the width of the groove is 0.4 mm; the distance between the two-port output end microstrip line and the three-port output end microstrip line is 6.25 mm; the radius of the metal through hole is 0.3 mm.
Preferably, the conduction band of the input microstrip line deviates 1.5mm from the balun symmetry axis.
Compared with the prior art, the invention has the obvious advantages that (1) the structure of the balun is simple, the balun can be realized on a single PCB, the processing is convenient, and the production cost is low; (2) the balun has the functions of providing constant-amplitude reverse signals and impedance matching, and an impedance matching section is not needed to be used when the balanced antenna and other radio frequency elements feed; (3) the balun has the characteristics of small size, wide working frequency band (from 0.13MHz to 5.2GHz, and the frequency band bandwidth ratio exceeds 50:1), small insertion loss, good matching characteristic of an output port and the like.
Drawings
Fig. 1 is a schematic 3D structure diagram of an ultra-wideband balun embodiment based on a novel interconnection structure.
Fig. 2 is a schematic top view of an ultra-wideband balun based on a novel interconnection structure according to an embodiment of the present invention.
Fig. 3 is a schematic structural dimension diagram of an embodiment of the ultra-wideband balun based on a novel interconnection structure.
Fig. 4 is a simulation diagram of the S-parameter of the ultra-wideband balun based on the novel interconnection structure.
Fig. 5 is a simulation diagram of amplitude difference of two output ports of the ultra-wideband balun based on the novel interconnection structure.
Fig. 6 is a simulation diagram of phase difference between two output ports of the ultra-wideband balun based on the novel interconnection structure.
Detailed Description
The invention relates to an ultra wide band balun based on a novel interconnection structure, which comprises a rectangular dielectric substrate 9; a T-shaped junction power divider 2, a coplanar stripline 4, a two-port output end microstrip conduction band 6 and a three-port output end microstrip conduction band 7 are arranged on the front surface of the dielectric substrate 9; wherein,
the T-shaped junction power divider 2 is composed of an input end microstrip line conduction band 1 and a T-shaped junction microstrip line conduction band 12 vertically connected with the input end microstrip line conduction band 1, one end of the input end microstrip line conduction band 1 is located at the edge of the short side of the dielectric substrate 9, and the other end of the input end microstrip line conduction band 1 is connected with the T-shaped junction microstrip line conduction band 12; the T-shaped junction microstrip line conduction band 12 is parallel to the short side of the dielectric substrate 9, the center of the T-shaped junction microstrip line conduction band 12 is located on a central axis parallel to the long side of the dielectric substrate 9, one end of the T-shaped junction microstrip line conduction band 12 is connected with the coplanar stripline 4, the other end of the T-shaped junction microstrip line conduction band is connected with the circular metal through hole 3, and the T-shaped junction microstrip line conduction band is connected with the coplanar waveguide 10 through the circular metal through hole 3.
The two-port output end microstrip line conduction band 6 and the three-port output end microstrip line conduction band 7 are both vertical to the narrow edge of the dielectric substrate 9, and one end of each microstrip line conduction band is positioned at the edge of the narrow edge of the dielectric substrate 9; the other end of the microstrip conduction band 6 at the two-port output end is connected with the coplanar stripline 4, and the other end of the microstrip conduction band 7 at the three-port output end is simultaneously connected with the two circular metal through holes 3 and is connected with the coplanar waveguide 10 on the back side of the dielectric substrate 9 through the two circular metal through holes 3;
the coplanar stripline 4 comprises two parallel microstrip conduction bands, wherein two ends of one microstrip conduction band are respectively connected with the two circular metal through holes 3 and are respectively connected with the two-port output end microstrip floor 5 and the input end microstrip floor 11 on the reverse side of the dielectric substrate 9 through the circular metal through holes 3; one end of the other microstrip line conduction band in the coplanar stripline 4 is connected with the microstrip line conduction band 6 at the output end of the two ports, and the other end is connected with the T-shaped junction power divider 2.
The reverse side of the dielectric substrate 9 comprises a two-port output end microstrip line floor 5, a three-port output end microstrip line floor 8, a coplanar waveguide 10 and an input end microstrip line floor 11, wherein,
the input end microstrip line floor 11 is rectangular, three sides of the input end microstrip line floor are positioned at three sides of the dielectric substrate 9 and are superposed, and the other side of the input end microstrip line floor is connected with the floor of the coplanar waveguide 10;
the two-port output end microstrip line floor 5 is rectangular, the central axis thereof is superposed with the central axis of the coplanar stripline 4, and the two-port output end microstrip line floor is connected with one conduction band of the coplanar stripline 4 through a metal through hole 3,
the three-port output end microstrip line floor 8 is rectangular, the central axis thereof is superposed with the central axes of the three-port output end microstrip line conduction band 7 and the coplanar waveguide 10,
one end of a signal line of the coplanar waveguide 10 is connected with a three-port output end microstrip line floor 8, the other end of the signal line is connected with a T-shaped junction microstrip line conduction band 12 through one metal through hole 3, one end of the floor of the coplanar waveguide 10 is connected with an input end microstrip line floor 11, and the other end of the floor of the coplanar waveguide 10 is connected with a three-port output end microstrip line conduction band 7 through two metal through holes 3.
The working process of the ultra-wideband balun based on the novel interconnection structure is as follows: electromagnetic signals enter the balun from the input end microstrip line 1, two paths of equal-amplitude homodromous signals are obtained through the T-shaped junction power divider 2, wherein one path of signals passes through the coplanar stripline 4 and is transmitted to a two-port output end microstrip transmission line consisting of a two-port output end microstrip line conduction band 6 and a two-port output end microstrip line floor 5 along the coplanar stripline 4; similarly, the other signal is transmitted to a three-port output microstrip transmission line composed of a three-port output microstrip conduction band 7 and a three-port output microstrip ground plate 8 along the coplanar waveguide 10 through the coplanar waveguide 10.
Structurally, the widths of an input end microstrip line conduction band 1, a two-port output end microstrip line conduction band 6 and a three-port output end microstrip line conduction band 7 are determined according to the impedance of a port, and the input end microstrip line conduction band 1 is generally designed to be the corresponding width of a 50-ohm microstrip line; in the application field of the antenna, the widths of the two-port output end microstrip line conduction band 6 and the three-port output end microstrip line conduction band 7 are determined according to the input impedance of the antenna. The line width of the coplanar strip line 4, the signal line of the coplanar waveguide 10 and the conduction band width of the microstrip line of the output port are kept consistent. The bandwidth of the balun is increased along with the increase of the length of the coplanar waveguide 10 to reach the maximum value, and then is reduced, the groove width between two transmission lines of the coplanar strip line 4 is controlled to have an adjusting function on the amplitude matching characteristics of two output ports of the balun, and the phase matching characteristics of the two output ports of the balun can be adjusted by controlling the distance of the microstrip conduction band 1 of the input end deviating from the symmetrical axis of the structure. In the manufacturing process, the required metal patterns are formed on the front circuit and the back circuit of the circuit substrate by the printed circuit board manufacturing process.
Examples
By taking the ultra-wideband balun based on the novel interconnection structure working at 0.15-5.2GHz as an example with reference to fig. 1, fig. 2, and fig. 3, the dielectric substrate 9 adopted has a relative dielectric constant of 3.38 and a thickness of 0.508 mm. The characteristic impedance of the input microstrip line 1 is 50 ohms, the width W1 of the input microstrip line 1 is 1.05mm, the characteristic impedances of the two-port output end microstrip line 6 and the three-port output end microstrip line 7 are 75 ohms, and the width W2 is 0.3 mm. The line width of the coplanar strip line 4 is consistent with W2, the length L3 is 4.2mm, and the groove width S1 is 0.17 mm; the width of a signal line of the coplanar waveguide 10 is consistent with W2, the length L4 is 2.4mm, the slot width S2 is 0.4mm, and the distance L2 between the two-port output end microstrip line 6 and the three-port output end microstrip line 7 is 6.25 mm. The radius of the metal through hole 3 is 0.3mm, and the distance L1 of the input microstrip line conduction band 1 deviating from the balun symmetry axis is 1.5 mm.
The ultra-wideband balun of the embodiment is modeled and simulated in electromagnetic simulation software HFSS.13. Fig. 4 is a simulation diagram of the S parameter of the ultra-wideband balun in this embodiment, and it can be seen from the diagram that the S parameter of the balun is less than-10 dB in the range of 0.15-5.2GHz, the insertion loss is less than 1.3dB, the octave bandwidth is 34.7, and the advantage of low insertion loss of the ultra-wideband is achieved.
Fig. 5 is an amplitude difference between two balanced output ports of the ultra-wideband balun in this embodiment, and it can be seen from the figure that the amplitude difference between the two balanced output ports of the ultra-wideband balun in this embodiment is within 0.2 dB.
Fig. 6 is a phase difference between two balanced output ports of the ultra-wideband balun in this embodiment, and it can be seen from the figure that the phase difference between the two balanced output ports of the balun in this embodiment is within 180 ± 2 degrees.
In summary, the ultra-wideband balun based on a novel interconnection structure is based on the background of development of wireless communication to broadband and miniaturization, and the ultra-wideband balun is realized by utilizing two different types of broadband interconnection structures; the invention realizes the ultra-wideband balun by utilizing the microstrip line-coplanar waveguide and the microstrip line-coplanar microstrip line broadband interconnection structure, and has the advantages of small size, compact circuit structure, small insertion loss, good matching characteristic of two balanced output ports, ultra-wideband and the like.
Claims (10)
1. An ultra-wideband balun based on a novel interconnection structure is characterized by comprising a rectangular dielectric substrate (9); the front surface of the dielectric substrate (9) is provided with a T-shaped junction power divider (2), a coplanar stripline (4), a two-port output end microstrip conduction band (6) and a three-port output end microstrip conduction band (7); the back surface of the dielectric substrate (9) is provided with a two-port output end microstrip line floor (5), a three-port output end microstrip line floor (8), a coplanar waveguide (10) and an input end microstrip line floor (11); a plurality of circular metal through holes (3) are arranged in the dielectric substrate (9) and are used for connecting devices on the front side and the back side of the dielectric substrate (9).
2. The ultra-wideband balun based on a novel interconnection structure as claimed in claim 1, characterized in that the T-junction power divider (2) is composed of a T-junction microstrip conduction band (12) parallel to the short side of the dielectric substrate (9) and an input microstrip conduction band (1) perpendicular to the T-junction microstrip conduction band (12); one end of the input end microstrip line conduction band (1) is positioned at the edge of the short side of the dielectric substrate (9); the center of the T-shaped junction microstrip line conduction band (12) is positioned on a central axis parallel to the long edge of the dielectric substrate (9), one end of the T-shaped junction microstrip line conduction band (12) is connected with the coplanar stripline (4), and the other end of the T-shaped junction microstrip line conduction band is connected with a circular metal through hole (3) and is connected with the coplanar waveguide (10) through the circular metal through hole (3).
3. The ultra-wideband balun based on a novel interconnection structure as claimed in claim 1, wherein the two-port output end microstrip line conduction band (6) and the three-port output end microstrip line conduction band (7) are both perpendicular to the narrow side of the dielectric substrate (9), and one end of each conduction band is located at the edge of the narrow side of the dielectric substrate (9); the other end of the two-port output microstrip line conduction band (6) is connected with the coplanar stripline (4), and the other end of the three-port output microstrip line conduction band (7) is simultaneously connected with the two circular metal through holes (3) and is connected with the coplanar waveguide (10) through the two circular metal through holes (3).
4. The ultra-wideband balun based on a novel interconnection structure as claimed in claim 1, characterized in that the coplanar stripline (4) comprises two parallel microstrip conduction bands, wherein two ends of one microstrip conduction band are respectively connected with two circular metal vias (3), and are respectively connected with the microstrip ground (5) at the output end of the two ports and the microstrip ground (11) at the input end through the circular metal vias (3); one end of the other microstrip line conduction band in the coplanar stripline (4) is connected with the microstrip line conduction band (6) at the output end of the two ports, and the other end is connected with the T-shaped junction power divider (2).
5. The ultra-wideband balun based on a novel interconnection structure as claimed in claim 1, characterized in that the input microstrip line ground (11) is rectangular, three sides of which are located on three sides of the dielectric substrate (9), and the other side of which is connected to the ground of the coplanar waveguide (10).
6. The ultra-wideband balun based on a novel interconnection structure as claimed in claim 1, characterized in that the two-port output microstrip line ground plate (5) is rectangular, the central axis of which coincides with the central axis of the coplanar stripline (4), and which is connected with one of the conduction bands of the coplanar stripline (4) through a metal via (3).
7. The ultra-wideband balun based on a novel interconnection structure as claimed in claim 1, characterized in that the three-port output microstrip line ground plane (8) is rectangular, and the central axis thereof coincides with the central axes of the three-port output microstrip line conduction band (7) and the coplanar waveguide (10).
8. The ultra-wideband balun based on a novel interconnection structure as claimed in claim 1, characterized in that one end of the signal line of the coplanar waveguide (10) is connected to the three-port output microstrip line ground (8), the other end is connected to the T-junction microstrip line conduction band (12) through one metal via (3), one end of the ground of the coplanar waveguide (10) is connected to the input microstrip line ground (11), and the other end is connected to the three-port output microstrip line conduction band (7) through two metal vias (3).
9. The ultra-wideband balun based on a novel interconnection structure as claimed in claim 1, characterized in that the dielectric substrate (9) has a relative dielectric constant of 3.38 and a thickness of 0.508 mm; the characteristic impedance of the input microstrip line (1) is 50 ohms, and the width is 1.05 mm; the characteristic impedance of the two-port output end microstrip line (6) and the three-port output end microstrip line (7) is 75 ohms, and the width is 0.3 mm; the length L3 of the coplanar stripline (4) is 4.2mm, and the groove width is 0.17 mm; the length of a signal line of the coplanar waveguide (10) is 2.4mm, and the width of the groove is 0.4 mm; the distance between the two-port output end microstrip line (6) and the three-port output end microstrip line (7) is 6.25 mm; the radius of the metal through hole (3) is 0.3 mm.
10. The ultra-wideband balun based on a novel interconnect structure as claimed in claim 1, characterized in that the input microstrip line conduction band (1) is offset 1.5mm from the balun symmetry axis.
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| CN106450707A (en) * | 2016-12-16 | 2017-02-22 | 淮阴工学院 | Balun applicable to dipole antenna |
| CN106654557A (en) * | 2016-12-16 | 2017-05-10 | 淮阴工学院 | Dual-frequency-point broadband dipole antenna |
| CN106684516A (en) * | 2016-12-15 | 2017-05-17 | 南通大学 | Broadband three-wire balun |
| CN108123196A (en) * | 2017-12-25 | 2018-06-05 | 北京邮电大学 | Wideband filtered based on vertical two-sided parallel strips integrates three-dimensional balun |
| WO2018171229A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Balun circuit structure with bridge structure antenna |
| CN113612456A (en) * | 2021-10-11 | 2021-11-05 | 深圳飞骧科技股份有限公司 | Broadband microwave power amplifier |
| CN114447596A (en) * | 2022-01-25 | 2022-05-06 | 北京星英联微波科技有限责任公司 | Broadband vertical planar printed gain enhanced antenna with H-shaped resonator structure |
| CN114678673A (en) * | 2022-04-02 | 2022-06-28 | 西安电子科技大学 | Broadband balun loaded with ferrite magnetic ring |
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| CN106684516B (en) * | 2016-12-15 | 2019-05-28 | 南通大学 | A kind of three line balun of broadband |
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| CN106654557A (en) * | 2016-12-16 | 2017-05-10 | 淮阴工学院 | Dual-frequency-point broadband dipole antenna |
| CN106654557B (en) * | 2016-12-16 | 2023-09-29 | 淮阴工学院 | Double-frequency-point broadband dipole antenna |
| WO2018171229A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Balun circuit structure with bridge structure antenna |
| CN108123196B (en) * | 2017-12-25 | 2020-06-02 | 北京邮电大学 | Broadband filtering integrated stereo balun based on vertical double-sided parallel strip lines |
| CN108123196A (en) * | 2017-12-25 | 2018-06-05 | 北京邮电大学 | Wideband filtered based on vertical two-sided parallel strips integrates three-dimensional balun |
| CN113612456A (en) * | 2021-10-11 | 2021-11-05 | 深圳飞骧科技股份有限公司 | Broadband microwave power amplifier |
| CN114447596A (en) * | 2022-01-25 | 2022-05-06 | 北京星英联微波科技有限责任公司 | Broadband vertical planar printed gain enhanced antenna with H-shaped resonator structure |
| CN114447596B (en) * | 2022-01-25 | 2022-10-18 | 北京星英联微波科技有限责任公司 | Broadband vertical planar printed gain enhanced antenna with H-shaped resonator structure |
| CN114678673A (en) * | 2022-04-02 | 2022-06-28 | 西安电子科技大学 | Broadband balun loaded with ferrite magnetic ring |
| CN114678673B (en) * | 2022-04-02 | 2023-03-14 | 西安电子科技大学 | Broadband balun loaded with ferrite magnetic ring |
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| CN105789802B (en) | 2018-09-04 |
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