CN204391233U - A kind of ultra wide band balun based on novel interconnect architecture - Google Patents

A kind of ultra wide band balun based on novel interconnect architecture Download PDF

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CN204391233U
CN204391233U CN201420795649.2U CN201420795649U CN204391233U CN 204391233 U CN204391233 U CN 204391233U CN 201420795649 U CN201420795649 U CN 201420795649U CN 204391233 U CN204391233 U CN 204391233U
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microstrip line
conduction band
port
medium substrate
ultra wide
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林善明
顾辉
蔡传涛
黄烽
王建朋
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Nanjing University of Science and Technology
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Nanjing University of Science and Technology
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Abstract

The utility model proposes a kind of ultra wide band balun based on novel interconnect architecture.Comprise rectangular medium substrate; T junction power divider, coplanar stripline, Two-port netwerk output microstrip line conduction band, three port output microstrip line conduction bands are provided with in the front of medium substrate; The reverse side of medium substrate is provided with Two-port netwerk output microstrip line, three port output microstrip line, co-planar waveguide, input microstrip line; Be provided with the device of multiple circular metal through hole for connecting media substrate positive and negative in the dielectric substrate.The utility model size is little, circuit structure is compact, insertion loss is little, have good output port matching properties.

Description

A kind of ultra wide band balun based on novel interconnect architecture
Technical field
The utility model belongs to microwave passive component technical field, is specifically related to a kind of ultra wide band balun based on novel interconnect architecture.
Background technology
In field of antenna, dipole antenna belongs to balanced type antenna, thus needs a Ba Lun unbalanced signal to be converted to balanced signal and to come for balanced type antenna feed.Ba Lun is balun, can provide constant amplitude reverse signal and realize impedance matching.In microwave current integrated circuit, modal signal transmssion line is microstrip line, transmission be non-equilibrium signal, and co-planar waveguide and coplanar stripline are all one side transmission lines, have size little, are easy to integrated, are convenient to realize the features such as broadband interconnect architecture with microstrip structure.Based on this background, we adopt microstrip line-co-planar waveguide and microstrip line-coplanar stripline to achieve a kind of loss is low, size is little, the ultra wide band balun of good port match performance.
Have the bibliographical information structure of ultra wide band balun:
Document 1 (Vicente Gonz á lez-Posadas, Carlos Mart í n-Pascual, Jos é Luis Jim é nez-Mart í n, and Daniel Segovia-Vargas, Lumped-element balun for UHF UWB printed balanced antennas, IEEE Transactions on antenna and propagation, 2008, 56, (7) utilize: 2102-2107) in high pass unit and low pass cellular construction and present capacitive character and inductive respectively, like this by suitable measure in parallel, thus obtain the phase place reverse characteristic of two output ports, but this Ba Lunshi realizes based on half lamped element, be difficult to realize wide bandwidth, and insertion loss is large.
Document 2 (Peng Wu, Yong Zhang, Yu-Liang Dong, and Qin Zhang, A novel Ka-band planar balun using microstrip-CPS-microstrip transition, IEEE Microwave Wireless Compon.Lett., 2011,21, (3): 136-138) in utilize the interconnect architecture of two symmetrical microstrip line-coplanar striplines to achieve the Ba Lun in broadband, but the larger and complicated structure of the size of Ba Lun.
Document 3 (Jin Shao, Rongguo Zhou, Chang Chen, Xiao-Hua Wang, Hyoungsoo Kim, and Hualiang Zhang, Design of a wideband balun using parallel strips, IEEE Microwave Wireless Compon.Lett., 2013,23, (3): 125-127) in utilize phase converter to achieve the Ba Lun in broadband, have good port match characteristic, but the size of Ba Lun is larger.
In sum, what the Ba Lun of design in (1) document 1 adopted is the implementation of half lamped element, millimere-wave band lamped element loss comparatively and make circuit be not easy to processing; (2) the comparatively large and complex structure of the wideband balun size of design in document 2; (3) in document 3, the wideband balun of design has the large shortcoming of size.
Summary of the invention
The purpose of this utility model provides based on novel interconnect architecture that a kind of size is little, circuit structure is compact, insertion loss is little, have the ultra wide band balun of good output port matching properties.
In order to solve the problems of the technologies described above, the utility model provides a kind of ultra wide band balun based on novel interconnect architecture, comprises rectangular medium substrate; T junction power divider, coplanar stripline, Two-port netwerk output microstrip line conduction band, three port output microstrip line conduction bands are provided with in the front of medium substrate; The reverse side of medium substrate is provided with Two-port netwerk output microstrip line, three port output microstrip line, co-planar waveguide, input microstrip line; Be provided with the device of multiple circular metal through hole for connecting media substrate positive and negative in the dielectric substrate.
Preferably, T junction power divider is made up of the T junction microstrip line conduction band parallel with medium substrate minor face and the input microstrip line conduction band vertical with T junction microstrip line conduction band; One end of input microstrip line conduction band is positioned at the edge of medium substrate minor face; Being centrally located on the parallel central axis in limit long with medium substrate of T junction microstrip line conduction band, one end of T junction microstrip line conduction band is connected with coplanar stripline, and the other end is connected with a circular metal through hole, and is connected with co-planar waveguide by this circular metal through hole.
Preferably, Two-port netwerk output microstrip line conduction band, three port output microstrip line conduction bands are all perpendicular to the narrow limit of medium substrate, and one end is all positioned at the edge on the narrow limit of medium substrate; The other end of Two-port netwerk output microstrip line conduction band is connected with coplanar stripline, and the other end of three port output microstrip line conduction bands is connected with two circular metal through holes simultaneously, and is connected with co-planar waveguide by these two circular metal through holes.
Preferably, coplanar stripline comprises two parallel microstrip line conduction bands, wherein the two ends of a microstrip line conduction band are connected with two circular metal through holes respectively, and are connected with Two-port netwerk output microstrip line and input microstrip line respectively by circular metal through hole; In coplanar stripline, one end of another microstrip line conduction band is connected with Two-port netwerk output microstrip line conduction band, and the other end is connected with T junction power divider.
Preferably, input microstrip line is rectangle, and its three limits are positioned on three limits of medium substrate, and another side is connected with the floor of co-planar waveguide.
Preferably, Two-port netwerk output microstrip line is the central axes of rectangle, its central axis and coplanar stripline, and it is connected with a wherein conduction band of coplanar stripline by a metal throuth hole.
Preferably, three port output microstrip line are rectangle, the central axes of its central axis and three port output microstrip line conduction bands, co-planar waveguide.
Preferably, one end of the holding wire of co-planar waveguide is connected with three port output microstrip line, the other end is connected with microstrip line conduction band by a metal throuth hole, the one end on the floor of co-planar waveguide is connected with input microstrip line, and the other end is connected with three port output microstrip line conduction bands by two metal throuth holes.
Preferably, medium substrate relative dielectric constant 3.38, thickness is 0.508mm; The characteristic impedance of input microstrip line is 50 ohm, and width is 1.05mm; Two-port netwerk output microstrip line and three port output microstrip line characteristic impedances are 75 ohm, and width is 0.3mm; The length L3 of coplanar stripline is 4.2mm, and groove width is 0.17mm; The length of the holding wire of co-planar waveguide is 2.4mm, and groove width is 0.4mm; Distance between Two-port netwerk output microstrip line and three port output microstrip lines is 6.25mm; The radius of metal throuth hole is 0.3mm.
Preferably, input microstrip line conduction band and depart from Ba Lun symmetry axis 1.5mm.
Compared with prior art, its remarkable advantage is the utility model, and the structure of (1) Ba Lun is simple, and can realize on monolithic pcb board, just with processing, production cost is low; (2) Ba Lun has the effect providing constant amplitude reverse signal and impedance matching, for during the radio-frequency (RF) component feeds such as balancing antenna without the need to re-using impedance matching section; (3) size of Ba Lun is little, working band is wide (from 0.13MHz to 5.2GHz, bandwidth ratio is more than 50:1), insertion loss is little, output port has the characteristics such as matched well characteristic.
Accompanying drawing explanation
Fig. 1 is the 3D structural representation of the utility model based on the ultra wide band balun embodiment of novel interconnect architecture.
Fig. 2 is the plan structure schematic diagram of the utility model based on the ultra wide band balun embodiment of novel interconnect architecture.
Fig. 3 is the physical dimension schematic diagram of the utility model based on the embodiment of the ultra wide band balun of novel interconnect architecture.
Fig. 4 is the S parameter analogous diagram of the utility model based on the embodiment of the ultra wide band balun of novel interconnect architecture.
Fig. 5 is the analogous diagram of the utility model based on two output port amplitude differences of the embodiment of the ultra wide band balun of novel interconnect architecture.
Fig. 6 is the analogous diagram of the utility model based on two output port phase differences of the embodiment of the ultra wide band balun of novel interconnect architecture.
Embodiment
A kind of ultra wide band balun based on novel interconnect architecture of the utility model, comprises rectangular medium substrate 9; T junction power divider 2, coplanar stripline 4, Two-port netwerk output microstrip line conduction band 6, three port output microstrip line conduction band 7 is provided with in the front of medium substrate 9; Wherein,
T junction power divider 2 is formed by input microstrip line conduction band 1 with input microstrip line conduction band 1 T junction microstrip line conduction band 12 connected vertically, one end of input microstrip line conduction band 1 is positioned at the edge of medium substrate 9 minor face, and the other end is connected with T junction microstrip line conduction band 12; T junction microstrip line conduction band 12 is parallel with medium substrate 9 minor face, T junction microstrip line conduction band 12 be centrally located on the central axis parallel with the long limit of medium substrate 9, one end of T junction microstrip line conduction band 12 is connected with coplanar stripline 4, the other end is connected with a circular metal through hole 3, and is connected with co-planar waveguide 10 by this circular metal through hole 3.
Two-port netwerk output microstrip line conduction band 6, three port output microstrip line conduction band 7 all perpendicular to the narrow limit of medium substrate 9, and has one end to be positioned at the edge on the narrow limit of medium substrate 9; The other end of Two-port netwerk output microstrip line conduction band 6 is connected with coplanar stripline 4, the other end of three port output microstrip line conduction bands 7 is connected with two circular metal through holes 3 simultaneously, and is connected by the co-planar waveguide 10 of two circular metal through holes 3 with medium substrate 9 reverse side;
Coplanar stripline 4 comprises two parallel microstrip line conduction bands, wherein the two ends of a microstrip line conduction band are connected with two circular metal through holes 3 respectively, and are connected with the Two-port netwerk output microstrip line 5 of medium substrate 9 reverse side and input microstrip line 11 respectively by circular metal through hole 3; In coplanar stripline 4, one end of another microstrip line conduction band is connected with Two-port netwerk output microstrip line conduction band 6, and the other end is connected with T junction power divider 2.
The reverse side of medium substrate 9 comprises Two-port netwerk output microstrip line 5, three port output microstrip line 8, co-planar waveguide 10, input microstrip line 11, wherein,
Input microstrip line 11 is rectangle, and three limits that its three limits are positioned at medium substrate 9 overlap, and another side is connected with the floor of co-planar waveguide 10;
Two-port netwerk output microstrip line 5 is the central axes of rectangle, its central axis and coplanar stripline 4, and it is connected with a wherein conduction band of coplanar stripline 4 by a metal throuth hole 3,
Three port output microstrip line 8 are rectangle, the central axes of its central axis and three port output microstrip line conduction bands 7, co-planar waveguide 10,
One end of the holding wire of co-planar waveguide 10 is connected with three port output microstrip line 8, the other end is connected with T junction microstrip line conduction band 12 by a metal throuth hole 3, the one end on the floor of co-planar waveguide 10 is connected with input microstrip line 11, and the other end is connected with three port output microstrip line conduction bands 7 by two metal throuth holes 3.
The utility model is as follows based on the course of work of the ultra wide band balun of novel interconnect architecture: electromagnetic signal enters Ba Lun from input microstrip line 1, two-way constant amplitude signal is in the same way obtained through T junction power divider 2, wherein a road signal is through coplanar stripline 4, is transferred to the Two-port netwerk output microstrip transmission line of Two-port netwerk output microstrip line conduction band 6 and Two-port netwerk output microstrip line 5 composition along coplanar stripline 4; Same, another road signal, through co-planar waveguide 10, is transferred to three port output microstrip transmission lines of three port output microstrip line conduction bands 7 and three port output microstrip line 8 composition along co-planar waveguide 10.
Structurally, the width of input microstrip line conduction band 1, Two-port netwerk output microstrip line conduction band 6 and three port output microstrip line conduction bands 7 is determined according to the impedance of port, and general input microstrip line conduction band 1 is designed to the corresponding width of 50 ohm microstrip; In antenna applications field, Two-port netwerk output microstrip line conduction band 6 and three port output microstrip line conduction band 7 width are determined according to the input impedance of antenna.The live width of coplanar stripline 4, co-planar waveguide 10 holding wire and output port microstrip line conduction band width are consistent.After the bandwidth of Ba Lun increases with the length of co-planar waveguide 10 and increases and reach maximum, can reduce again, the groove width controlled between coplanar stripline 4 two transmission lines has corrective action to Ba Lun two output port amplitude matching properties, and the distance of the control input end microstrip line conduction band 1 deviation structure axis of symmetry can regulate Ba Lun two output port phase matching characteristics.In manufacture, form required metal pattern by the circuit fabrication of printed-circuit board manufacturing technology to circuit substrate front-side circuit and the back side.
Embodiment
Composition graphs 1, Fig. 2, Fig. 3, to be operated in the ultra wide band balun based on novel interconnect architecture of 0.15-5.2GHz, medium substrate 9 relative dielectric constant 3.38 of employing, thickness is 0.508mm.The characteristic impedance of input microstrip line 1 is 50 ohm, and the width W 1 of input microstrip line 1 is 1.05mm, and Two-port netwerk output microstrip line 6 and three port output microstrip line 7 characteristic impedances are 75 ohm, and width W 2 is 0.3mm.The live width of coplanar stripline 4 is consistent with W2, and length L3 is 4.2mm, groove width S1 is 0.17mm; The holding wire width of co-planar waveguide 10 is consistent with W2, and length L4 is 2.4mm, groove width S2 is 0.4mm, and the distance L2 between Two-port netwerk output microstrip line 6 and three port output microstrip lines 7 is 6.25mm.The radius of metal throuth hole 3 is 0.3mm, and the distance L1 that input microstrip line conduction band 1 departs from Ba Lun symmetry axis is 1.5mm.
The present embodiment ultra wide band balun is modeling and simulating in electromagnetic simulation software HFSS.13.Fig. 4 is the S parameter analogous diagram of ultra wide band balun in the present embodiment, and as can be seen from the figure, the S parameter of Ba Lun is less than-10dB within the scope of 0.15-5.2GHz, and insertion loss is less than 1.3dB, and frequency multiplication bandwidth is 34.7, has the advantage of ultra broadband low insertion loss.
Fig. 5 is two Differential Output port amplitude differences of ultra wide band balun in the present embodiment, and as can be seen from the figure, two Differential Output port amplitude differences of this embodiment Ba Lun are within 0.2dB.
Fig. 6 is two Differential Output port phase differences of ultra wide band balun in the present embodiment, and as can be seen from the figure, two Differential Output port phase differences of this embodiment Ba Lun are within 180 ± 2 degree.
In sum, the utility model is based on the ultra wide band balun of novel interconnect architecture, based on radio communication to broadband, miniaturization background, two kinds of dissimilar broadband interconnect architectures are utilized to achieve ultra wide band balun, this structure comprises two symmetrical interconnect architectures, co-planar waveguide, microstrip line conduction band and microstrip line composition interconnect architecture, form crossings on different level place, be connected to an output port of microstrip line conduction band structure, coplanar stripline, microstrip line conduction band and microstrip line composition interconnect architecture, be connected to another output port of microstrip line conduction band structure, the utility model utilizes microstrip line-co-planar waveguide and microstrip line-coplanar microstrip line broadband interconnect architecture to realize ultra wide band balun, has that size is little, circuit structure is compact, insertion loss is little, an advantage such as two Differential Output port matching properties are good, ultra broadband.

Claims (10)

1. based on a ultra wide band balun for novel interconnect architecture, it is characterized in that, comprise rectangular medium substrate (9); T junction power divider (2), coplanar stripline (4), Two-port netwerk output microstrip line conduction band (6), three port output microstrip lines conduction band (7) are provided with in the front of medium substrate (9); The reverse side of medium substrate (9) is provided with Two-port netwerk output microstrip line (5), three port output microstrip line (8), co-planar waveguide (10), input microstrip line (11); The device of multiple circular metal through hole (3) for connecting media substrate (9) positive and negative is provided with in medium substrate (9).
2. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, T junction power divider (2) is made up of the T junction microstrip line conduction band (12) parallel with medium substrate (9) minor face and the input microstrip line conduction band (1) vertical with T junction microstrip line conduction band (12); One end of input microstrip line conduction band (1) is positioned at the edge of medium substrate (9) minor face; T junction microstrip line conduction band (12) be centrally located on the central axis parallel with medium substrate (9) long limit, one end of T junction microstrip line conduction band (12) is connected with coplanar stripline (4), the other end is connected with a circular metal through hole (3), and is connected with co-planar waveguide (10) by this circular metal through hole (3).
3. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, Two-port netwerk output microstrip line conduction band (6), three port output microstrip lines conduction band (7) are all perpendicular to the narrow limit of medium substrate (9), and one end is all positioned at the edge on medium substrate (9) narrow limit; The other end of Two-port netwerk output microstrip line conduction band (6) is connected with coplanar stripline (4), the other end of three port output microstrip lines conduction band (7) is connected with two circular metal through holes (3) simultaneously, and is connected with co-planar waveguide (10) by these two circular metal through holes (3).
4. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, coplanar stripline (4) comprises two parallel microstrip line conduction bands, wherein the two ends of a microstrip line conduction band are connected with two circular metal through holes (3) respectively, and are connected with Two-port netwerk output microstrip line (5) and input microstrip line (11) respectively by circular metal through hole (3); In coplanar stripline (4), one end of another microstrip line conduction band is connected with Two-port netwerk output microstrip line conduction band (6), and the other end is connected with T junction power divider (2).
5. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, input microstrip line (11) is rectangle, and its three limits are positioned on three limits of medium substrate (9), and another side is connected with the floor of co-planar waveguide (10).
6. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, Two-port netwerk output microstrip line (5) is rectangle, the central axes of its central axis and coplanar stripline (4), and it is connected with a wherein conduction band of coplanar stripline (4) by a metal throuth hole (3).
7. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, three port output microstrip line (8) are rectangle, the central axes of its central axis and three port output microstrip lines conduction band (7), co-planar waveguide (10).
8. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, one end of the holding wire of co-planar waveguide (10) is connected with three port output microstrip line (8), the other end is connected with T junction microstrip line conduction band (12) by a metal throuth hole (3), the one end on the floor of co-planar waveguide (10) is connected with input microstrip line (11), and the other end is connected with three port output microstrip lines conduction band (7) by two metal throuth holes (3).
9. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, medium substrate (9) relative dielectric constant 3.38, thickness is 0.508mm; Input microstrip line (1) characteristic impedance is 50 ohm, and width is 1.05mm; Two-port netwerk output microstrip line (6) and three port output microstrip line (7) characteristic impedances are 75 ohm, and width is 0.3mm; The length L3 of coplanar stripline (4) is 4.2mm, and groove width is 0.17mm; The length of the holding wire of co-planar waveguide (10) is 2.4mm, and groove width is 0.4mm; Distance between Two-port netwerk output microstrip line (6) and three port output microstrip lines (7) is 6.25mm; The radius of metal throuth hole (3) is 0.3mm.
10. as claimed in claim 1 based on the ultra wide band balun of novel interconnect architecture, it is characterized in that, input microstrip line conduction band (1) departs from Ba Lun symmetry axis 1.5mm.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105244582A (en) * 2015-10-30 2016-01-13 南京理工大学 Wideband balun based on microstrip line-slot structure
CN105789802A (en) * 2014-12-15 2016-07-20 南京理工大学 Ultra-wideband Balun based on new interconnection structure
CN106450707A (en) * 2016-12-16 2017-02-22 淮阴工学院 Balun applicable to dipole antenna
CN112002976A (en) * 2020-08-11 2020-11-27 南京理工大学 Brick type power divider with same output phase

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789802A (en) * 2014-12-15 2016-07-20 南京理工大学 Ultra-wideband Balun based on new interconnection structure
CN105789802B (en) * 2014-12-15 2018-09-04 南京理工大学 A kind of ultra wide band balun based on novel interconnection architecture
CN105244582A (en) * 2015-10-30 2016-01-13 南京理工大学 Wideband balun based on microstrip line-slot structure
CN106450707A (en) * 2016-12-16 2017-02-22 淮阴工学院 Balun applicable to dipole antenna
CN112002976A (en) * 2020-08-11 2020-11-27 南京理工大学 Brick type power divider with same output phase
CN112002976B (en) * 2020-08-11 2021-09-03 南京理工大学 Brick type power divider with same output phase

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