CN102591041B - Integrated type online electro-optic modulator with graphene thin film and D-type optical fiber - Google Patents
Integrated type online electro-optic modulator with graphene thin film and D-type optical fiber Download PDFInfo
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- CN102591041B CN102591041B CN201210067024.XA CN201210067024A CN102591041B CN 102591041 B CN102591041 B CN 102591041B CN 201210067024 A CN201210067024 A CN 201210067024A CN 102591041 B CN102591041 B CN 102591041B
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Abstract
The invention belongs to the technical field of optical communication and sensing transmission of optical communication, and provides an integrated type online electro-optic modulator with a graphene thin film and a D-type optical fiber to overcome the disadvantages that the traditional electro-optic modulator is large in volume, high in energy consumption, narrow in modulation bandwidth, high in insertion loss, easy in interruption and the like. The electro-optic modulator comprises a silicon dioxide substrate, the D-type optical fiber arranged inside a groove of the silicon dioxide substrate, the graphene thin film coated on a polished surface of the D type optical fiber, and two metal electrodes oppositely arranged at the two sides of the graphene thin film, wherein one of the two metal electrodes is attached to the edge of the graphene thin film, the other one of the two metal electrodes is connected with the silicon dioxide substrate, and packaging adhesive used for packaging is arranged on a surface formed by the silicon dioxide substrate and the D-type optical fiber. The integrated type online electro-optic modulator with the graphene thin film and the D-type optical fiber, disclosed by the invention, has the advantages of small size, low power consumption and low cost, signal light is not subjected to the requirement of skewed normal distribution, few system error is produced, and the optical insertion loss is low; in addition, no crystal refraction effect is exerted and the pulse quality is excellent. The graphene has the advantages of sensitive electro-optic response and high modulation speed.
Description
Technical field
The invention belongs to optical communication and sensing transmission technique field thereof, provide a kind of graphene film D type optical fiber integrated form online electrooptic modulator.
Background technology
As the principal mode of modern communications, optical fiber communication has broadband, low-loss, large capacity, reliability high.Along with the fast development of high speed transmission system, people also improve day by day to the requirement of bandwidth.As an important component part of optical communication, optical modulation also more and more is subject to people's attention.The effect of light modulation techniques is that bit signal is loaded on light wave, by continuous on-off action, produces the light pulse of being modulated.According to the principle of work of modulator, photomodulator can be divided into electrooptic modulator, acousto-optic modulator, magneto-optic modulator and electricity and cause the Absorption modulation device.And electrooptical modulation can be directly and the combination of circuit communication system, it is the most ripe, most widely used a kind of technology wherein.
The principle of work of traditional electrooptic modulator is to utilize the linear electro-optic effect of medium, and the Pockles effect is carried out work.Under alive effect, the effective refractive index linear change of medium, modulate the output light intensity, produces pulse signal outside.Its structure generally is in series by the polarizer, electro-optic crystal, bias electrode, analyzer and signal amplifier, light signal enters electro-optic crystal after by the polarizer, electro-optic crystal changes refractive index by the modulation requirement under the effect of electric signal, make that light signal is modulated goes out different polarization states, present different intensity after analyzer, thereby produce modulated pulse trains.Current, commercial electrooptic modulator has KTP crystal modulator, lithium columbate crystal modulator, monocrystalline silicon modulator etc.
Along with the raising day by day of user's request, numerous limitation of traditional electrooptic modulator, become communication science and developed very important bottleneck.At first, traditional electrical photomodulator size is generally several millimeters to tens centimetres, and volume is larger, and the insertion loss between device and fibre system is larger, is not easy to integrated and micro-system application; The second, the physicochemical property of modulation crystal material are stable not, make electrooptic modulator be subject to the impact of temperature humidity and photo damage threshold value etc.; The 3rd, the driving voltage of traditional electrical photomodulator is generally several volts to several hectovolts, needs higher threshold voltage, and energy consumption is high, heat production is many, noise is large; The 4th, due to electro-optic crystal, the refractive index homogeneity is not high enough, and the ABSORPTION AND SCATTERING loss is larger, so the energy dissipation of traditional electrical photomodulator is serious; The 5th, different crystal is selective to the transmitted light wave frequency range, usually only have tens nanometers, cause traditional electrical photomodulator bandwidth wide not, and large scale, high driving voltage also make its transfer rate slow, larger operating lag arranged, the distortionless transmission requirement of high-level efficiency be can't meet, wavelength-division multiplex and wide-band modulation are unfavorable for; The 6th, the traditional electrical photomodulator generally is based on the Polarization Control light intensity, and the precision of system is had to very high requirement, easily is disturbed, and system stability is not high enough.
Graphene is the New Two Dimensional material that a kind of carbon atom is hexagonal honeycomb lattice arrangement, be also at present the thinnest in the world be also the hardest nano material.Its thickness is a carbon atom diameter (about 10nm) only; Electric conductivity is strong, and the resistivity 10-9 ohm of only having an appointment, much smaller than metals such as copper, silver; Absorption to light is very low, is only 2.3%, and logical photosensitiveness is good; Stable chemical nature, be difficult for oxidation.Graphene is determined by its Fermi level the absorbent properties of light.When not applying external voltage, the Fermi level of Graphene approaches the dirac point.Now, inject the light that frequency is v0, can be by the Electron absorption in band between Graphene to change electron level, light must be more by Electron absorption, and waveguiding effect is more weak.When applying a negative voltage (usually being less than-1V), conduction band enlarges, the forbidden band compression, and Fermi level reduces away from below dirac point, there is no to absorb the bound electron of luminous energy at interband, so light signal is shown as to conducting.When applying one enough during large positive voltage (usually being greater than 3.8V), Fermi level raises, and higher than the dirac point, now, the forbidden band ratio enlarges, and the light of interband transmission is absorbed in a large number, shows as photoresistance.By regulating the bias voltage of graphene layer, can regulate its Fermi level, and then realize the make-break operation to Graphene surface conductive light, reached the purpose with the electric signal modulated light signal.
Many series devices of using in modern optical networks have the problem of docking with single-mode fiber, and result causes the problems such as insertion loss increase, power reflection and appliance integrality be poor.One of its solution is exactly to use the single-mode fiber of single-sided polishing.D type optical fiber is by a section of single-mode fiber being carried out to the new construction optical fiber that single-sided polishing forms later, due to the similar letter of its shape of cross section " D ", therefore be called D type optical fiber.When light transmits in fibre core, due to light guide close to polished surface, part light can be propagated with the form of evanescent wave on polished surface, so D type optical fiber can form senser element and various integrating optical photocontrol and the communication device etc. of various surface light evanescent waves.
Compare and traditional crystal integrated electro-optical modulation device, the electrooptical modulation mode based on graphene film-D type optical fiber structure has clear superiority.At first, small volume, for the approximately several nm of the graphene film thickness of electrooptical modulation, even devices such as supplemantary electrode, substrates, its volume also is far smaller than the size of the about 10mm-100mm of traditional integrated electro-optic modulator; Secondly, loss is extremely low, in the electrooptic modulator of Graphene-D type optical fiber structure, light, from general single mode fiber input, is propagated along D type optical fiber and graphene film surface, and with the form of evanescent wave, acts on mutually with it, then by the single-mode fiber output optical signal, so do not have the problems such as device access, path is short, Mode Coupling is simple; The 3rd, energy consumption is very little, the integrated electrooptic modulator than tradition, in the modulation system of Graphene-D type optical fiber structure, electric signal only provides bias voltage, does not have current loop, do not produce in theory electric heating, the driving voltage of the energy level of atom level modulation simultaneously is also relatively low; The 4th, speed is faster, and bandwidth is larger, compares traditional electrooptic modulator, and the bandwidth of graphene film-D type optical fiber structure electro-optic modulation system is not limited by the frequency-selecting of crystalline nature and doped fiber, can realize that visible ray arrives far wide area modulation.
Summary of the invention
The defects such as traditional electrical photomodulator volume is large, energy consumption is high, modulation band-width is narrow in order to overcome, insertion loss greatly, easily is disturbed, provide a kind of graphene film D type optical fiber integrated form online electrooptic modulator, its size is less, bias voltage approximately-5V, modulation efficiency > 90%, the about 1000nm-1700nm of wavelength coverage, more than modulating speed can reach 50GHz.This modulator structure is simple, with low cost, size is small, easy to operate, can be integrated in efficiently in Circuits System, realize the high speed electro-optical modulation of chip-scale.
The present invention is for achieving the above object by the following technical solutions:
The online electrooptic modulator of a kind of graphene film D type optical fiber integrated form, it is characterized in that: comprise silicon dioxide substrates (6), be arranged on the D type optical fiber (1) in silicon dioxide substrates (6) groove, be coated in the graphene film (2) on D type optical fiber polished surface (11), two metal electrodes (3) that are oppositely arranged on graphene film (2) both sides, described metal electrode one of them and graphene film layer (2) edge attach, another and silicon dioxide substrates (6) are joined, be provided with the packaging plastic for encapsulation on the face formed at silicon dioxide substrates (6) and D type optical fiber (1).
Further, described metal electrode (3) two ends are applied with the bias voltage that the light transmission rate of graphene film (2) is controlled.
Further, described packaging plastic is low-refraction ultraviolet glue (4).
The present invention has following beneficial effect:
One, the present invention is owing to having adopted Graphene-D type optical fiber structure, and than the traditional electrical photomodulator, its size and power consumption are small, cost is low, and flashlight is not had to the requirement of polarization state, and systematic error and light insertion loss are all very little; Without the crystal refraction effect, pulse quality is good; The Graphene electro-optic response is sensitive, modulating speed fast (theory can reach 500GB/s).
Two, the present invention is owing to having adopted Graphene-D type optical fiber structure, its device size is small, in the micron number magnitude, the approximately several nm of graphene film thickness for electrooptical modulation, even the device such as supplemantary electrode, substrate, its volume also is far smaller than the size of the about 10mm-100mm of traditional integrated electro-optic modulator.
Three, energy consumption of the present invention is very little, and the integrated electrooptic modulator than tradition, in the modulation system of Graphene-D type optical fiber structure, electric signal only provides bias voltage, do not have current loop, do not produce in theory electric heating, the driving voltage of the energy level of atom level modulation simultaneously is also relatively low;
Four, speed of the present invention is faster, and bandwidth is larger, compares traditional electrooptic modulator, and the bandwidth of graphene film-D type optical fiber structure electro-optic modulation system is not limited by the frequency-selecting of crystalline nature and doped fiber, can realize that visible ray arrives far wide area modulation.
Five, loss of the present invention is extremely low, in the electrooptic modulator of Graphene-D type optical fiber structure, light is from the general single mode fiber input, along D type optical fiber and graphene film surface, propagate, and with the form of evanescent wave, act on mutually with it, then by the single-mode fiber output optical signal, so there are not the problems such as device access, path is short, and Mode Coupling is simple;
Six, the present invention is owing to having adopted Graphene-D type optical fiber structure, and its modulation rate be exceedingly fast is up to more than 10GHz, and wider spectral bandwidth, between 1000nm-1700nm.
The accompanying drawing explanation
Fig. 1 is D type optical fiber structure schematic diagram;
Fig. 2 is the graphene-structured schematic diagram;
Fig. 3 is the three-dimensional structure schematic diagram of the online electrooptic modulator of graphene film D type optical fiber integrated form of the present invention;
Fig. 4 is the cross section view of the online electrooptic modulator of graphene film D type optical fiber integrated form of the present invention.
The work wave schematic diagram that Fig. 5 a and Fig. 5 b are the online electrooptic modulator of graphene film D type optical fiber integrated form of the present invention;
Fig. 5 a is modulation front electric signal and light signal schematic diagram;
Fig. 5 b is the light signal schematic diagram after modulating;
1-D type optical fiber, 11-D type optical fiber polished surface (surface), 12-fiber core, 13-D type fibre cladding, 2-graphene film, 3-gold electrode, 4-low-refraction ultraviolet glue, 5-optical fiber input/output terminal, 6-silicon dioxide substrates in figure.
Embodiment
Below in conjunction with drawings and Examples, technical scheme of the present invention is described further.
As shown in Figure 3; the D type optical fiber (1) of diameter 125um is fixed in the groove of silicon dioxide substrates (6) of about 150um*300um; at the upper one deck area about 25000um2 single-layer graphene film (2) that applies of D type optical fiber (1); be oppositely arranged a pair of gold electrode (3) and make one and single-layer graphene film (2) be attached to together with; another is placed on silicon dioxide substrates (6); for protecting whole modulator structure, carry out upper surface with low-refraction ultraviolet glue (4) and apply encapsulation.In practical operation, the characteristic of utilizing the photoconductivity of grapheme material controlled by impressed voltage, gold electrode (3) by graphene film (2) both sides applies bias voltage, light transmission rate to graphene film (2) is controlled, thereby the evanscent field that affects near the light of D type optical fiber (1) is propagated, change the transmission light intensity, at general single mode fiber (5) output terminal, form modulated pulse, reach the purpose of electrooptical modulation.Device size is small, and in the micron number magnitude, driving voltage is low, is only the voltage magnitude.The modulation rate be exceedingly fast is up to more than 10GHz, and wider spectral bandwidth, between 1000nm-1700nm.
Fig. 4 is the cross section view of this structure.
D type optical fiber is ground and is obtained by general single mode fiber.By one section of single-mode fiber, adopt four step rule to remove covering smooth without damaged to guarantee D type district, reduced the light scattering of grinding and polishing face.Distance by fiber core and polished surface in grinding and polishing is controlled insertion loss, and the luminous energy of therefore overflowing from polished surface is controlled equally.Due to the impact of grinding and polishing, the effective refractive index that light conducting is experienced reduces, and finally causes the pattern broadening in D type district.When after territory, mould place spraying nonlinear material-graphene dispersing solution, light can in the situation that do not affect transmission and suddenly die and be coupled into the graphene layer that is plated in polished surface, can improve effective active area up to several orders of magnitude like this.The number that is coupled into the light of graphene layer depends on several factors, comprises the character of the grinding and polishing degree of depth, film thickness and density and film itself etc.Finally on the graphene layer surface, add last layer ultraviolet glue protective seam.The operating distance of light conducting and grapheme material is longer, thereby has guaranteed enough nonlinear effects.All optical fibre structure: a lower Graphene concentration threshold can realize optical modulation.
The present invention is " D type optical fiber-graphene film-drive electrode-surface encapsulation " structure.Fix the D type optical fiber of a diameter 125um in the groove of silicon dioxide substrates, cover the single-layer graphene film on D type optical fiber, the gold electrode of the about 200um of size is relatively drawn in the substrate left and right sides, and left side electrode contacts with graphene layer, and the right electrode and silicon dioxide substrates are joined.Finally will the ultraviolet glue encapsulation with low-refraction at the modulator upper surface.The about 10um of the thickness of whole modulator.Its course of work is that, after input optical signal is inputted by general single mode fiber, the impact in D type fiber area due to evanscent field, act on mutually with the graphene film that is coated on D type optical fiber surface.Electrical modulation signal is applied to the both sides of graphene film by gold electrode, produce bias field, the photoconduction passband of rhythmic change Graphene, bias voltage for approximately-Graphene shows as logical light during 2V, when bias voltage is about 3V, Graphene shows as resistance light, and then make to change along the evanscent field intensity electrical modulation signal of graphene film conduction, obtain being subject to the light pulse sequence of electric signal modulation at the light output end of general single mode fiber.
Claims (3)
1. the online electrooptic modulator of graphene film D type optical fiber integrated form, it is characterized in that: comprise silicon dioxide substrates (6), be arranged on the D type optical fiber (1) in silicon dioxide substrates (6) groove, be coated in the single-layer graphene film (2) on D type optical fiber polished surface (11), two metal electrodes (3) that are oppositely arranged on graphene film (2) both sides, described metal electrode one of them and graphene film layer edge attach, another and silicon dioxide substrates (6) are joined, be provided with the packaging plastic for encapsulation on the face formed at silicon dioxide substrates (6) and D type optical fiber (1).
2. the online electrooptic modulator of a kind of graphene film D type optical fiber integrated form according to claim 1, it is characterized in that: described metal electrode (3) two ends are applied with the bias voltage that the light transmission rate of graphene film (2) is controlled.
3. the online electrooptic modulator of a kind of graphene film D type optical fiber integrated form according to claim 1, it is characterized in that: described packaging plastic is low-refraction ultraviolet glue (4).
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| US8105928B2 (en) * | 2009-11-04 | 2012-01-31 | International Business Machines Corporation | Graphene based switching device having a tunable bandgap |
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