CN109541745B - Micro-ring resonator with improved coupling area and manufacturing method thereof - Google Patents
Micro-ring resonator with improved coupling area and manufacturing method thereof Download PDFInfo
- Publication number
- CN109541745B CN109541745B CN201811529297.5A CN201811529297A CN109541745B CN 109541745 B CN109541745 B CN 109541745B CN 201811529297 A CN201811529297 A CN 201811529297A CN 109541745 B CN109541745 B CN 109541745B
- Authority
- CN
- China
- Prior art keywords
- waveguide
- layer
- micro
- straight
- ring resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
Abstract
The invention provides a micro-ring resonator with an improved coupling area and a manufacturing method thereof, belonging to the field of integrated optics. The device comprises a substrate 1, a bonding layer 2, a straight waveguide 4, a dielectric layer 6 and a runway waveguide 7, wherein the bonding layer 2 is arranged above the substrate 1, the dielectric layer 6 is arranged above the bonding layer 2, the straight waveguide 4 is arranged in the dielectric layer 6, a straight channel part of the runway waveguide 7 is right above the straight waveguide 4, the device is characterized by further comprising an embedded groove 3, the embedded groove 3 is arranged in the bonding layer 2 in a coupling area and is located right below the straight waveguide 4, and the refractive index of the embedded groove 3 is smaller than that of the substrate 1. The buried groove structure adopted in the invention can reduce the leakage loss of the optical field in the transmission process, promote the optical field to transfer to other media, further improve the coupling efficiency, and also has the advantage of promoting the mode to change from multimode mode reduction in the ridge waveguide.
Description
Technical Field
The invention belongs to the field of integrated optics, and particularly relates to a micro-ring resonant cavity device structure with an improved coupling region and a related manufacturing method thereof.
Background
Integrated optics is one of the development fronts in the fields of optics and optoelectronics, and the main research contents of the integrated optics comprise collimation, deflection, filtering, spatial radiation, light oscillation, conduction, amplification, modulation of light waves in thin film materials, and nonlinear optical effects of the thin film materials related to the collimation, the deflection, the filtering, the spatial radiation, the light oscillation, the conduction, the amplification, the modulation and the like. In recent years, with the development of micromachining technologies such as ion beam implantation, direct bonding, focused ion beam etching, and the like, the research of optoelectronics is going deep, and the discovery of materials with various optical properties, integrated optics is gradually maturing. In 1969, marcacili [1] et al proposed micro-ring resonators and simulated bandpass filters based thereon, and until the last decade, due to the continuous advance of CMOS process precision, the research and application of micro-ring resonators in the field of integrated optics began to rapidly develop, and has now become one of the most basic and indispensable structural units in integrated optics. The micro-ring resonator has wavelength selectivity, can be used for regulating and controlling a transmission path of light, and can generate various nonlinear optical phenomena. Due to the simple structure, small size and easy combination with other photonic structures, the microring resonator has become one of the most basic structural units in integrated optics, and is widely applied to the above-mentioned various integrated photonic devices. Semiconductor lasers, optical filters, wavelength converters, optical logic gates, optical time delays, optical modulators/switches, optical sensors, etc. based on micro-ring resonators have been developed.
At present, although the micro-ring resonator is implemented On different materials such as SOI (Silicon-On-Insulator, Silicon On an insulating substrate), organic polymer, lithium niobate and the like, the marked parameters of the micro-ring resonator, such as loss, modulation depth, free spectral range, quality factor and the like, still have a large improvement space. In addition, most micro-ring resonators adopt a horizontal coupling structure, in the aspect of coupling distance, the coupling distance of devices adopting horizontal coupling is about 200nm generally, the coupling distance of horizontal coupling is narrow in process realization, the precision of common photoetching technology cannot meet the requirement, and the cost of more advanced photoetching technology is too high. The resonator adopting the vertical coupling structure also has the problem that the loss of the device is increased due to the fact that the surfaces of all layers on the multilayer structure cannot be flat, so that the advantages brought by the vertical coupling structure are offset, and the resonator also has difficulty in application.
It is therefore desirable to provide a microring resonator structure with improved coupling regions to optimize performance and provide a more easily implemented fabrication method.
[1]Marcatili E AJ.Bends in optical dielectric guides.Bell SystemTechnical Journal, 1969,48(7):2103-2132.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the microring resonator is provided, and a buried groove structure is added, so that the performance parameters of the microring resonator, such as leakage loss, coupling efficiency and the like, are excellent.
Aiming at the technical problems, the technical scheme adopted by the invention is as follows:
a micro-ring resonator with an improved coupling area comprises a substrate 1, a bonding layer 2, a straight waveguide 4, a dielectric layer 6 and a runway waveguide 7, wherein the bonding layer 2 is arranged above the substrate 1, the dielectric layer 6 is arranged above the bonding layer 2, the straight waveguide 4 is arranged in the dielectric layer 6, a straight channel part of the runway waveguide 7 is arranged right above the straight waveguide 4, the micro-ring resonator is characterized by further comprising a buried groove 3, the buried groove 3 is arranged in the bonding layer 2 in the coupling area and is positioned right below the straight waveguide 4, and the refractive index of the buried groove 3 is smaller than that of the substrate 1.
Further, the buried groove 3 is a dielectric material or a cavity having a refractive index lower than 1.5.
Further, the buried groove 3 may be disposed below the entire straight waveguide 4, or below the straight waveguide 4 and the annular portion of the racetrack waveguide 7.
Further, the width of the buried trench 3 is preferably slightly larger than the width of the optical leakage mode field, and the depth of the buried trench 3 is preferably slightly larger than the depth of the optical leakage mode field.
Further, when the buried groove 3 is a cavity and the width of the buried groove is larger than that of the straight waveguide 4, a supporting layer structure should be manufactured above the buried groove 3 to prevent the waveguide core layer from collapsing, and the supporting layer structure is made of SiO2Or Si3N4The thickness of the support layer does not exceed 1 μm.
Further, a cladding layer 8 is arranged above the dielectric layer 6, and the runway waveguide 7 is arranged in the cladding layer 8.
Furthermore, the section of the straight waveguide 4 in the coupling region is narrowed to form a narrowed shape, the narrowed shape is continuously equal to the straight waveguide 4 in height, and the narrowed shape is a trapezoid 5 or a dumbbell shape.
Further, the straight waveguide 4 is directly above the straight portion of the track-type waveguide 7.
Further, the runway length of the runway type waveguide 7 can be selected as required, and the runway is not required to be the annular waveguide.
Further, the straight waveguide 4 and the racetrack waveguide 7 are strip waveguides, ridge waveguides or circular waveguides.
Furthermore, a metal layer is deposited on the upper and lower sides of the straight waveguide 4 and a metal layer is deposited on the upper and lower sides of the racetrack waveguide 7 to manufacture electrodes, and the refractive index of the waveguide material is changed by applying an electric field to realize the function of the micro-ring modulator.
Further, the substrate 1 may be optionally selected from Si and SiO2The bonding layer 2 can be made of SiO2Or polymer material such as BCB (benzocyclobutene) and PMMA (polymethyl methacrylate), α -Si and LiNbO can be used as the waveguides 4 and 73、GaN、Ta2O5The medium layer 6 can be made of material with refractive index higher than 2 or low-loss polymer material such as PMMA, PI (fluorine-containing polyimide), etc., and the medium layer 6 can be BCB or SiO2、Si3N4The low refractive index dielectric material is BCB, and the like can be adopted as the cladding layer 8.
The invention also provides a manufacturing method of the coupling region improved micro-ring resonator, which comprises the following steps:
step 8, etching the second waveguide layer film by taking photoresist or metal as a mask to obtain a runway-type waveguide 7;
step 9, preparing a cladding layer 8 above the track type waveguide 7 by spin coating or Plasma Enhanced Chemical Vapor Deposition (PECVD);
and 10, punching from the top layer of the device to the sacrificial layer 9, and corroding the sacrificial layer 9 by using corrosive liquid to obtain the cavity 3.
Furthermore, in the step 2, a photoresist can be used as a mask, a chemical vapor deposition method is adopted on the substrate, a sacrificial layer 9 is deposited on the position corresponding to the cavity 3, and then the photoresist is cleaned to expose the sacrificial layer 9.
In the manufacturing method of the invention, the etching method can adopt wet etching, dry etching or electron beam exposure, and the sacrificial layer 9 can adopt α -Si or SiO material2Metal, etc.
In the manufacturing method of the invention, the support layer can be manufactured by vapor deposition before the sacrificial layer 9 is manufactured in step 2 if the support layer is required to be manufactured as an optional structure; if the metal electrode is made as an optional structure, a metal lower electrode can be vapor-deposited after ion implantation is completed in the step one, and then a metal upper electrode is made through vapor deposition after the waveguide layer film is etched.
Compared with the prior art, the invention has the following beneficial effects:
1. the buried groove structure adopted in the invention can reduce the leakage loss of the optical field in the transmission process, promote the optical field to transfer to other media, further improve the coupling efficiency, and also has the advantage of promoting the mode to change from multimode mode reduction in the ridge waveguide.
2. The vertical coupling structure adopted in the invention has larger coupling area per unit length of the waveguide, and has larger coupling distance tolerance and wider coupling distance when the coupling distance obtains the same coupling efficiency compared with the horizontal coupling structure, thereby being easier to realize in process and having higher distance precision.
3. The straight waveguide adopted in the invention is narrowed at the section of the coupling region to form a narrowed shape, so that the light field can be promoted to transfer to another waveguide, and the coupling efficiency is improved.
4. Due to the self-leveling characteristic of the bonding layer, the influence of the manufactured buried groove structure on bonding is greatly reduced, the thickness is more controllable and the precision is higher, the consistency of the single crystal film obtained by the stripping process is better, and the stability, the consistency and the like of the manufactured device are more excellent; the sacrificial layer process makes it possible to fabricate complex junctions in the fabrication of various devices.
Drawings
Fig. 1 is a top view of a microring resonator structure of the present invention.
Fig. 2 is a cross-sectional view of a micro-ring resonator structure of the present invention.
Fig. 3 is a top view of a straight waveguide narrowing in cross-section to form a trapezoid structure in the microring resonator structure of the present invention.
Fig. 4 is a three-dimensional structure of a coupling region of a microring resonator of the present invention.
Fig. 5 is a graph showing simulation results of the micro-ring resonator of the present invention with or without a buried trench structure in COMSOL.
FIGS. 6(a) - (i) are flow charts of steps 1 to 10 of the method for fabricating the microring resonator provided by the present invention;
description of reference numerals:
the device comprises a substrate 1, a bonding layer 2, a cavity 3, a straight waveguide 4, a trapezoidal structure 5, a dielectric layer 6, a runway waveguide 7, a cladding 8 and a sacrificial layer 9;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the microring resonator with improved coupling region and the method for manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a top view of a microring resonator structure of the present invention. As shown in figure 1, the invention is a micro-ring resonator adopting a vertical coupling structure, the basic symmetrical structure of the micro-ring resonator comprises a straight waveguide 4, a runway type waveguide 7, a buried groove 3 and a trapezoidal structure 5, light is coupled into a device from the input end of the straight waveguide 4 and is transmitted along the straight waveguide 4, a part of light field in the trapezoidal structure 5 in a coupling area is coupled into the runway type waveguide 7, and a part of light field is output along the straight end of the straight waveguide 4. The light entering the racetrack waveguide 7 is transmitted around the inside thereof and then is coupled into another straight waveguide 4 at another coupling region, and the light coupled into the other straight waveguide 4 can be superposed with the light input by the uploading terminal and output from the downloading terminal.
Fig. 2 is a cross-sectional view of a micro-ring resonator structure of the present invention. As shown in fig. 2, the device structure of the present invention includes, in a cross-sectional view, a substrate 1, a bonding layer 2, a buried trench 3, a straight waveguide 4, a trapezoid structure 5, a dielectric layer 6, a racetrack waveguide 7, and a cladding layer 8, where a double-fold line in the device structure indicates that there is a longer distance in the device, which is not shown. The embedded groove 3 is arranged in the bonding layer 2, the strip waveguide 4 is embedded in the dielectric layer 6, the trapezoid structure 5 and the straight waveguide 4 are continuously equal in height, and the runway waveguide 7 is arranged right above the straight waveguide 4.
Fig. 3 is a top view of a straight waveguide narrowing in cross-section to form a trapezoid structure in the microring resonator structure of the present invention. Fig. 4 is a three-dimensional structure of a coupling region of a microring resonator of the present invention. As shown in fig. 3 and 4, in the coupling region structure of the present invention, the width of the coupling region straight waveguide 4 is gradually reduced to a certain extent and then is not reduced, so as to form a trapezoid structure 5, and the width of the buried trench 3 right below is smaller than the minimum width of the trapezoid structure 5 in the coupling region.
Fig. 5 is a graph showing simulation results of the micro-ring resonator with or without the buried trench structure in COMSOL according to the present embodiment. The structural parameters of the embodiment are ridge width of 1.5um, plate height of 800nm, ridge height of 200nm, air as a cladding layer, lithium niobate as a waveguide layer material, and BCB as a bonding layer and a dielectric layer. As shown in fig. 5, the device structure of the present embodiment is simulated in COMSOL, and it can be seen from the simulation result that the TE20 mode is significantly shifted to two sides in the structure containing the cavity, and the leakage loss to the lower layer is significantly reduced, so that the cavity structure has the advantages of reducing the loss and promoting the disappearance of the high-order mode so that the waveguide retains the fundamental mode.
The manufacturing method of the device of this embodiment is specifically described by taking the buried trench as the cavity as an example as shown in fig. 6(a) - (i):
step 1: for LiNbO as waveguide layer3Carrying out He + ion implantation on the thick film to form an ion implantation layer on the surface of the thick film;
step 2: LiNbO as waveguide layer using photoresist as mask3Depositing a layer of SiO on the position corresponding to the cavity 3 on one side of the thick film containing the He + ion injection layer by adopting a chemical vapor deposition method2The sacrificial layer 9 is cleaned by acetone in an ultrasonic cleaning instrument to expose the sacrificial layer 9;
and step 3: in SiO2Manufacturing the bonding layer 2 on the sacrificial layer 9 by spin coating BCB;
and 4, step 4: placing the Si substrate for bonding and the material containing the bonding layer 2 into bonding equipment, applying pressure to bond the two parts together, annealing, and performing ion implantation stripping to obtain the LiNbO waveguide layer3A film;
and 5: using Cr metal as mask and LiNbO as waveguide layer3Obtaining a straight waveguide 4 and a trapezoidal structure 5 on the film through Ar + etching;
step 6: a dielectric layer 6 is obtained by spin coating BCB on the upper parts of the straight waveguide 4 and the trapezoid structure 5;
and 7: ion-implanted LiNbO3Placing the thick film on the dielectric layer 6, placing the thick film into bonding equipment, applying pressure to bond the two parts together, annealing, and performing ion implantation stripping to obtain the waveguide layer LiNbO3A thin film of a material selected from the group consisting of,
and 8: etching the waveguide layer film by using photoresist or metal as a mask to obtain a runway waveguide 7;
and step 9: holes are punched from the top layer of the device to the sacrificial layer 9, and the sacrificial layer 9 is etched by HF acid to obtain the cavity 3.
The invention provides a micro-ring resonator with an improved coupling area and a manufacturing method thereof.A vertical coupling structure, a graph coupling area structure and a buried groove structure are integrated together by mainly utilizing a low-temperature bonding stripping and sacrificial layer process, wherein the vertical coupling structure enables the coupling distance to have larger tolerance and wider relatively and is easier to realize in the process; the trapezoidal structure can improve the coupling efficiency; the buried groove structure can reduce leakage loss of the optical field in the transmission process, and can promote the optical field to transfer to other media, so that the coupling efficiency is improved. In the aspect of the process, the self-leveling property of the bonding layer enables the influence of the manufactured cavity structure on bonding to be greatly reduced, the thickness is more controllable and the precision is higher, the consistency of the single crystal film obtained by the stripping process is better, and the stability, the consistency and the like of the manufactured device are more excellent; the sacrificial layer process makes it possible to fabricate complex junctions in the fabrication of various devices.
The above description is only for the purpose of illustrating the embodiments of the present invention and the purpose, content and advantages of the present invention are further described, it should be understood that the above description is only for the purpose of illustrating the embodiments of the present invention and is not to be construed as limiting the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. The improved micro-ring resonator of the coupling area comprises a substrate (1), a bonding layer (2), a straight waveguide (4), a dielectric layer (6) and a runway-type waveguide (7), wherein the bonding layer (2) is arranged above the substrate (1), the dielectric layer (6) is arranged above the bonding layer (2), the straight waveguide (4) is arranged in the dielectric layer (6), a straight channel part of the runway-type waveguide (7) is positioned right above the straight waveguide (4), the improved micro-ring resonator is characterized by further comprising a buried groove (3), the buried groove (3) is arranged in the bonding layer (2) in the coupling area and is positioned right below the straight waveguide (4), and the refractive index of the buried groove (3) is smaller than that of the substrate (1).
2. The micro-ring resonator with improved coupling area according to claim 1, characterized in that the buried trench (3) is a dielectric material or a cavity with a refractive index lower than 1.5.
3. The micro-ring resonator with improved coupling area according to claim 1, characterized in that the buried trench (3) is disposed under the whole straight waveguide (4) or under the annular portions of the straight waveguide (4) and the racetrack waveguide (7).
4. The micro-ring resonator of claim 1, wherein the width of the buried trench (3) is not less than the width of the optical leakage mode field, and the depth of the buried trench (3) is not less than the depth of the optical leakage mode field.
5. The micro-ring resonator with improved coupling zone according to claim 2, wherein when the buried trench (3) is a cavity and has a width greater than that of the straight waveguide (4), a support layer structure is formed above the buried trench (3) to prevent collapse of the waveguide core layer, and the support layer structure is made of SiO2Or Si3N4The thickness of the support layer does not exceed 1 μm.
6. The micro-ring resonator with improved coupling zone according to claim 1, characterized in that the straight waveguide (4) is narrowed in cross section at the coupling zone to form a narrowed shape, the narrowed shape being equal in height to the straight waveguide (4), and the narrowed shape being a trapezoid (5) or a dumbbell shape.
7. The micro-ring resonator with improved coupling zone according to claim 1, characterized in that a cladding (8) is arranged above the dielectric layer (6), and the racetrack waveguide (7) is arranged in the cladding (8).
8. A micro-ring modulator characterized in that electrodes are formed by depositing a metal layer on the upper and lower sides of the straight waveguide (4) and on the upper and lower sides of the racetrack waveguide (7) of the micro-ring resonator with improved coupling region according to claim 1, and the refractive index of the waveguide material is changed by applying an electric field to realize the function of the micro-ring modulator.
9. A method of fabricating a coupling region improved microring resonator as claimed in claim 7, the method comprising the steps of:
step 1, performing ion implantation on a waveguide layer thin film material to form an ion implantation layer on the surface of the waveguide layer thin film material;
step 2, preparing a buried groove pattern by adopting a sacrificial layer process, which comprises the following specific steps: adopting photoresist as a mask, depositing a sacrificial layer (9) on the position corresponding to the buried groove (3) on one side of the thin film material serving as the waveguide, which contains the ion injection layer, by adopting a chemical vapor deposition method, and then cleaning the photoresist to expose the sacrificial layer (9);
step 3, manufacturing a bonding layer (2) on the sacrificial layer (9) through spin coating or plasma enhanced chemical vapor deposition;
step 4, bonding the substrate material and the bonding layer (2) prepared in the step 3 together, annealing, and then carrying out ion implantation stripping to obtain a first waveguide layer film;
step 5, using photoresist or metal as a mask to etch the first waveguide layer film to obtain a straight waveguide (4);
step 6, a dielectric layer (6) is manufactured above the straight waveguide (4) through spin coating or plasma enhanced chemical vapor deposition;
step 7, bonding the waveguide layer material subjected to ion implantation treatment and the dielectric layer (6) prepared in the step 6 together, annealing, and then performing ion implantation stripping to obtain a second waveguide layer film;
step 8, etching the second waveguide layer film by taking photoresist or metal as a mask to obtain a runway-type waveguide (7);
step 9, preparing a cladding (8) above the track type waveguide (7) by spin coating or plasma enhanced chemical vapor deposition;
and 10, punching from the top layer of the device to the sacrificial layer (9), and corroding the sacrificial layer (9) by using a corrosive liquid to obtain a cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811529297.5A CN109541745B (en) | 2018-12-14 | 2018-12-14 | Micro-ring resonator with improved coupling area and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811529297.5A CN109541745B (en) | 2018-12-14 | 2018-12-14 | Micro-ring resonator with improved coupling area and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109541745A CN109541745A (en) | 2019-03-29 |
| CN109541745B true CN109541745B (en) | 2020-08-11 |
Family
ID=65855327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811529297.5A Active CN109541745B (en) | 2018-12-14 | 2018-12-14 | Micro-ring resonator with improved coupling area and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109541745B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110543034A (en) * | 2019-07-18 | 2019-12-06 | 武汉邮电科学研究院有限公司 | On-chip integrated broadband adjustable photon filter |
| CN110361604B (en) * | 2019-07-23 | 2021-08-13 | 北京无线电计量测试研究所 | Electric field detection quantum component, preparation method and quantum field intensity sensor |
| CN111175892A (en) * | 2020-01-07 | 2020-05-19 | 电子科技大学 | Lithium niobate optical waveguide device and preparation method thereof |
| CN111103261B (en) * | 2020-01-14 | 2022-08-26 | 东南大学 | Sub-wavelength grating runway type micro-ring resonator refractive index sensor |
| CN113325518B (en) * | 2021-05-31 | 2022-06-14 | 吉林大学 | Silica slab optical waveguide tunable micro-ring resonator and preparation method thereof |
| CN113872702B (en) * | 2021-09-26 | 2022-10-14 | 武汉光谷信息光电子创新中心有限公司 | Method, system, equipment and storage medium for controlling micro-ring wavelength |
| CN114035270B (en) * | 2021-11-08 | 2023-10-13 | 浙江光特科技有限公司 | Method for etching metal in optical waveguide |
| CN114035267A (en) * | 2021-11-11 | 2022-02-11 | 中国电子科技集团公司第五十五研究所 | AlGaAs optical waveguide manufacturing method for enhancing optical mode space limitation |
| CN114355507B (en) * | 2022-01-25 | 2023-12-05 | 吉林大学 | Micro-ring resonator based on inverted ridge type silicon dioxide/polymer mixed waveguide and preparation method thereof |
| CN117269079B (en) * | 2023-11-22 | 2024-02-27 | 天津工业大学 | Runway type micro-ring glucose sensor based on SOI and sensing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6411752B1 (en) * | 1999-02-22 | 2002-06-25 | Massachusetts Institute Of Technology | Vertically coupled optical resonator devices over a cross-grid waveguide architecture |
| CN1893334A (en) * | 2005-07-01 | 2007-01-10 | 中国科学院长春光学精密机械与物理研究所 | Polymer micro-resonance-ring wave-dividing multiplexer and preparing method therefor |
| KR20130069143A (en) * | 2011-12-16 | 2013-06-26 | 한국전자통신연구원 | Si and sin waveguide ring resonator structure |
| CN103259190A (en) * | 2013-05-13 | 2013-08-21 | 天津大学 | Annular semiconductor laser of vertical coupling structure and preparing method thereof |
| CN103308476A (en) * | 2013-05-16 | 2013-09-18 | 成都谱视科技有限公司 | Vernier effect based dual-micro-ring resonator optical biochemical sensing chip |
| CN103487406A (en) * | 2013-09-24 | 2014-01-01 | 电子科技大学 | Vertical coupling Mach-Zehnder interference type microring resonant cavity optical biochemical sensing chip |
| CN104283109A (en) * | 2014-09-26 | 2015-01-14 | 中国科学院半导体研究所 | Silicon-based micro-cavity laser based on metal limit cooling structure and method for manufacturing silicon-based micro-cavity laser |
| CN105759467A (en) * | 2016-05-23 | 2016-07-13 | 电子科技大学 | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides |
-
2018
- 2018-12-14 CN CN201811529297.5A patent/CN109541745B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6411752B1 (en) * | 1999-02-22 | 2002-06-25 | Massachusetts Institute Of Technology | Vertically coupled optical resonator devices over a cross-grid waveguide architecture |
| CN1893334A (en) * | 2005-07-01 | 2007-01-10 | 中国科学院长春光学精密机械与物理研究所 | Polymer micro-resonance-ring wave-dividing multiplexer and preparing method therefor |
| KR20130069143A (en) * | 2011-12-16 | 2013-06-26 | 한국전자통신연구원 | Si and sin waveguide ring resonator structure |
| CN103259190A (en) * | 2013-05-13 | 2013-08-21 | 天津大学 | Annular semiconductor laser of vertical coupling structure and preparing method thereof |
| CN103308476A (en) * | 2013-05-16 | 2013-09-18 | 成都谱视科技有限公司 | Vernier effect based dual-micro-ring resonator optical biochemical sensing chip |
| CN103487406A (en) * | 2013-09-24 | 2014-01-01 | 电子科技大学 | Vertical coupling Mach-Zehnder interference type microring resonant cavity optical biochemical sensing chip |
| CN104283109A (en) * | 2014-09-26 | 2015-01-14 | 中国科学院半导体研究所 | Silicon-based micro-cavity laser based on metal limit cooling structure and method for manufacturing silicon-based micro-cavity laser |
| CN105759467A (en) * | 2016-05-23 | 2016-07-13 | 电子科技大学 | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109541745A (en) | 2019-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109541745B (en) | Micro-ring resonator with improved coupling area and manufacturing method thereof | |
| US5281305A (en) | Method for the production of optical waveguides employing trench and fill techniques | |
| CN110989076B (en) | Thin-film lithium niobate single polarization waveguide and preparation method thereof | |
| US9946029B2 (en) | Optical coupler having anchored cantilever structure with multi-stage inverse taper core waveguide and fabrication method thereof | |
| US8412007B2 (en) | 3-D waveguide coupling device capable of two-step coupling and manufacture method thereof | |
| CN108225297B (en) | Resonant integrated optical gyroscope with vertically coupled silicon dioxide waveguide and lithium niobate thin film | |
| US20150323737A1 (en) | Method for production of optical waveguides and coupling and devices made from the same | |
| CN110911961B (en) | Tunable narrow linewidth laser | |
| US20090074346A1 (en) | Hybrid Electro-Optic Polymer/Sol-Gel Modulator | |
| US11520175B2 (en) | Active region-less modulator and method | |
| CN111367014B (en) | On-chip edge coupler with spot-size conversion function for optical interconnection | |
| Wang et al. | A cost-effective edge coupler with high polarization selectivity for thin film lithium niobate modulators | |
| GB2322713A (en) | Method for fabricating low-loss optically active device | |
| JP2006235379A (en) | Thermo-optical phase modulator and its manufacturing method | |
| JP2016045294A (en) | Optical semiconductor device and fabrication method of the same | |
| CN114355507B (en) | Micro-ring resonator based on inverted ridge type silicon dioxide/polymer mixed waveguide and preparation method thereof | |
| WO2016179869A1 (en) | Tapered waveguide and silicon-based chip | |
| CN114355508B (en) | Few-mode waveguide power divider based on directional coupling structure and preparation method thereof | |
| CN115685598A (en) | Waveguide structure with core-spun electro-optic material layer, preparation method and application | |
| JP5867016B2 (en) | Waveguide type optical device and manufacturing method thereof | |
| KR101787209B1 (en) | Saturable absorber and manufacturing method thereof, and pulse laser device using the same | |
| JP2004037587A (en) | Optical modulator and method for manufacturing the same | |
| JP3969320B2 (en) | Waveguide type optical components | |
| KR20050036404A (en) | Optical device employing the silica/polymer hybrid optical waveguide | |
| JP4003658B2 (en) | Lens array spot size conversion optical circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |