CN104283109A - Silicon-based micro-cavity laser based on metal limit cooling structure and method for manufacturing silicon-based micro-cavity laser - Google Patents
Silicon-based micro-cavity laser based on metal limit cooling structure and method for manufacturing silicon-based micro-cavity laser Download PDFInfo
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Abstract
The invention discloses a silicon-based micro-cavity laser based on a metal limit cooling structure and a method for manufacturing the silicon-based micro-cavity laser. The laser comprises an SOI wafer with a silicon waveguide, a semiconductor epitaxial wafer, a bonding layer, an N-electrode metal layer, an insulation isolating layer and a P-electrode metal coating, wherein the semiconductor epitaxial wafer comprises a bottom contact layer and a semiconductor laser resonant cavity, the semiconductor laser resonant cavity is located above the bottom contact layer, and a cooling channel is etched on the middle of the semiconductor laser resonant cavity; the bonding layer is used for bonding the SOI wafer with the silicon waveguide to the semiconductor epitaxial wafer; the N-electrode metal layer is located above the bottom contact layer and annularly surrounds the semiconductor laser resonant cavity; the surfaces of the N-electrode metal layer, the bottom contact layer and the semiconductor laser resonant cavity are covered with the insulation isolating layer; the P-electrode metal coating is located above the insulation isolating layer and the semiconductor laser resonant cavity and completely covers the side face of the semiconductor laser resonant cavity and the surface of the cooling channel.
Description
Technical field
The present invention relates to silicon based opto-electronics integrated technology field, particularly relate to a kind of silicon substrate microcavity laser device based on metal restriction radiator structure and preparation method thereof.
Background technology
Along with the development of silicon based opto-electronics integrated circuit and light network, the silica-based light source of electric pump is a requisite factor.But due to silicon be a kind of indirect bandgap material, luminous efficiency is low, is therefore not suitable for doing light source.Further, direct growth direct gap semiconductor material on silicon, because its lattice does not mate, growth difficulty is very large.In the last few years, SOI (isolate supports) platform is due to the compatibility of itself and CMOS technology and the feature little to the light absorption of communication wavelengths, more and more receive the concern of people, the method that SOI and III/V semi-conducting material bonding gets up to make silica-based light source is shown great application prospect at silicon based opto-electronics integration field by a kind of bonding techniques that utilizes.Based on this, silica-based Fabry-Perot (FP) bonded silica base laser, Distributed Bragg Reflection (DBR) and distributed feed-back (DFB) silica-based single mode FP cavity laser also in succession between generation.
Micro-cavity laser, because its volume is little, energy consumption is low and be convenient to integrated advantage, has huge application prospect in light network and integreted phontonics loop.But Bonded on Silicon Substrates micro-cavity laser, because itself volume is very little and bonded layer is very low with the thermal conductivity of burying silica (BOX) layer, causes the thermal resistance of Bonded on Silicon Substrates micro-cavity laser very large, thus has a strong impact on the output characteristic of laser.。Fig. 1 shows the structure chart of micro-cavity laser in prior art, and it comprises: with the SOI wafer of silicon waveguide, comprises substrate 1, bury silica (BOX) layer 2 and top silicon waveguide 3; Bonded layer 4; Back contact layer 5; Semiconductor laser resonator, comprising: lower limit layer 6, active area 7, upper limiting layer 8; N electrode metal level 9; Dielectric isolation layer 10; P electrode metal cladding 11; This structure is for use dielectric isolation layer 10 (SiO completely
2) restriction, P electrode metal cladding 11 do not cover the common lasers structure of semiconductor laser resonator completely, the heat major part that this structure laser produces is present in semiconductor laser resonator, do not conduct, therefore cause the thermal diffusivity of laser poor.
Summary of the invention
The object of the invention is silicon substrate microcavity laser device proposing a kind of metal restriction radiator structure and preparation method thereof.Wherein, the semiconductor epitaxial wafer growth of III/V race is in p-type InP substrate, SOI etches silicon waveguide, by bonding techniques, the two is bonded together, utilize semiconductor processing technology to etch microcavity shapes, and etch heat dissipation channel at microcavity center, at facet surface growth dielectric isolation layer, semiconductor laser resonator covers by final recycling P electrode metal cladding completely, thus reaches the object that heat radiation reduces thermal resistance.
A kind of silicon substrate microcavity laser device based on metal restriction radiator structure that the present invention proposes, is characterized in that, comprising:
With the SOI wafer of silicon waveguide;
Semiconductor epitaxial wafer, it comprises back contact layer and semiconductor laser resonator; Described semiconductor laser resonator is positioned at above described back contact layer, and its intermediate etch is formed with heat dissipation channel;
Bonded layer, for bonding with the SOI wafer of silicon waveguide and semiconductor epitaxial wafer;
N electrode metal level, it is positioned at above back contact layer, and around being formed in around described semiconductor laser resonator;
Dielectric isolation layer, it covers N electrode metal level, back contact layer and semiconductor laser resonator surface;
P electrode metal cladding, it is positioned at above dielectric isolation layer and semiconductor laser resonator, and covers semiconductor laser resonator side and heat dissipation channel surface completely.
The invention allows for a kind of manufacture method of the silicon substrate microcavity laser device based on metal restriction radiator structure, it comprises:
Step 1, on the soi wafer etching form silicon waveguide, and growing semiconductor epitaxial wafer;
Step 2, utilize bonded layer by described SOI wafer and semiconductor epitaxial wafer bonding;
Step 3, on described epitaxial wafer, etching forms semiconductor laser resonator, and retains one deck back contact layer in bottom; Meanwhile, heat dissipation channel is formed at formed semiconductor laser resonator intermediate etch;
Step 4, making N electrode metal level on described back contact layer surface, making it around being formed in around described semiconductor laser resonator;
Step 5, growth dielectric isolation layer, make it cover N electrode metal level, back contact layer and semiconductor laser resonator surface;
Step 6, growth P electrode metal cladding, make it be formed in above dielectric isolation layer and semiconductor laser resonator, and cover semiconductor laser resonator side and heat dissipation channel surface completely.
The silicon substrate microcavity laser device of the metal restriction radiator structure that the present invention proposes, the silicon-based micro ring laser utilizing bonding techniques and semiconductor laser manufacture craft to make metal to limit completely, micro-cyclic laser advantage of this kind of structure is by metal limiting layer, because the thermal conductivity of metal is very high, the heat that laser active district can be made to produce imports larger region into quickly through n-electrode metal level and p-electrode metal cladding, thus effectively reduces laser active district temperature and thermal resistance.
The advantage of the silicon substrate microcavity laser device of the metal restriction radiator structure that the present invention proposes is: for utilizing SiO
2deng the Bonded on Silicon Substrates micro-cavity laser of dielectric material as limiting layer, the thermal conductivity of silicon substrate is very large (in 131K/ (mK) left and right), therefore can well heat conduction.But, due to the thermal conductivity of bonded layer and buried silicon oxide layer very low (in 1K/ (mK) left and right), therefore the heat produced in active area is difficult to conduct in silicon substrate, and cause the temperature of active area to raise very large, therefore the thermal resistance of laser is larger.The silicon substrate microcavity laser device of the metal restriction radiator structure that the present invention proposes, by metal limiting layer as heat dissipating layer, because the thermal conductivity (about 150K/ (mK)) of metal is very high, the heat that laser active district produces can be imported into larger region by N electrode metal level and P electrode metal cladding, thus effectively reduce thermal resistance and laser active district temperature, improve the performance of laser.
Accompanying drawing explanation
Fig. 1 is the structural section schematic diagram of silicon substrate microcavity laser device in prior art;
Fig. 2 (a) is etched to back contact layer and the silicon substrate microcavity laser device structural representation utilizing metal to limit for heat dissipation channel in the present invention;
Fig. 2 (b) is etched to BOX layer and the silicon substrate microcavity laser device structural representation utilizing metal to limit for heat dissipation channel in the present invention;
Fig. 2 (c) is etched to layer-of-substrate silicon and the silicon substrate microcavity laser device structural representation utilizing metal to limit for heat dissipation channel in the present invention;
Fig. 3 is the variation relation schematic diagram of thermal resistance with laser radius and BCB bonded layer thickness of laser under the different structure shown in Fig. 1 and Fig. 2 utilizing Finite Element Method to calculate.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
The present invention proposes a kind of silicon substrate microcavity laser device based on metal restriction radiator structure, it has the radiator structure by limiting at semiconductor laser resonator intermediate etch heat dissipation channel and with metal.Metal limiting layer is as heat dissipating layer, because the thermal conductivity of metal is very high, can import by N electrode metal level and P electrode metal cladding the heat that laser active district produces into larger region, thus effectively reduce thermal resistance and laser active district temperature, improve the performance of laser.
Shown in Fig. 2, for DVS-BCB bonding micro-cyclic laser, the silicon substrate microcavity laser device based on metal restriction radiator structure that the present invention proposes is described in further detail.
A kind of silicon substrate microcavity laser device based on metal restriction radiator structure that the present invention proposes, it comprises:
With the SOI wafer of silicon waveguide, comprising: silicon substrate 1, its thermal conductivity is 131K/ (mK), is the good conductor of heat; Described silicon substrate 1 can select the SOI wafer with silicon waveguide; Bury silica (BOX) layer 2, be positioned at above silicon substrate 1; The effect of this layer is mainly used in isolating light field, prevents light loss, the SiO of this layer
2thermal conductivity be 1.27K/ (mK), therefore this layer seriously hinders the transmission of heat to silicon substrate; Top silicon waveguide 3, is positioned at above buried silicon oxide layer 2.The effect of silicon waveguide 3 laser coupled produced in semiconductor laser resonator is entered in silicon waveguide 3 by vertical coupled mode, thus realize bright dipping on silicon.
Bonded layer 4, bonded layer 4 is one decks III/V semiconductor epitaxial wafer and SOI sheet bonding got up, and is positioned at therebetween.Can be coupled in SOI top silicon waveguide 3 by the laser produced in bonded layer 4, III/V semiconductor epitaxial wafer.According to BCB bonding pattern, then select BCB (benzocyclobutene) bonded layer, its thermal resistance is 0.3K/ (mK); Heat is subject to great obstruction this layer of meeting, is the key factor causing laser heat resistive large.
Back contact layer 5, this layer is positioned at the top of bonded layer 4.It selects semi-conducting material, for depositing N electrode, provides pulse current injectingt.
Semiconductor laser resonator, for generation of laser, III/V semiconductor epitaxial wafer is etched to back contact layer 5 by semiconductor etching process and is formed by it, mainly comprise: lower limit layer 6, be positioned at the top of back contact layer 5, its shape can be micro-ring, micro-dish, square, ellipse or other polygon microcavity shapes, covers the part surface of back contact layer 5, and shown in figure is the microcavity shapes of micro-ring structure; Active area 7, is positioned at the top of lower limit layer 6, and shape is identical with lower limit layer 6, and this layer is the main region that heat produces, and is related to the thermal characteristic of device; Upper limiting layer 8, is positioned at the top of active area 7, and shape is identical with active area 7, plays the effect of light field restriction.
N electrode metal level 9, it is positioned at around semiconductor laser resonator, the top of back contact layer 5, around semiconductor laser resonator, and has certain distance with semiconductor laser resonator, for providing pulse current injectingt to laser.
Dielectric isolation layer 10, is positioned at facet surface, covers N electrode metal level 9 is surperficial, back contact layer 5 is not capped surface and semiconductor laser resonator surface.Can be SiO
2deng insulating material, there is lower refractive index.
Heat dissipation channel, it is by semiconductor laser resonator etching the hole formation formed.Wherein, semiconductor laser resonator etching hole is positioned at the center of microcavity, is formed III/V semiconductor epitaxial wafer etching by semiconductor etching techniques.The difference of its etching depth causes the improvement result of laser heat characteristic also different, and etching depth is darker, and its thermal characteristics is better.Fig. 2 (a) is for being etched to the structure of back contact layer 5, and Fig. 2 (b) buries the structure of silica 2 for being etched to, Fig. 2 (c) is for being etched to the structure of silicon substrate 1.P electrode metal cladding 11 effect be heat conduction that laser is produced to more large regions, thus reduce the thermal resistance of laser.For micro-dish, square isostructural semiconductor laser resonator, only need position etching heat radiation cavity therebetween.
P electrode metal cladding 11, is positioned at above dielectric isolation layer 10 and semiconductor laser resonator, and covers semiconductor laser resonator side completely, and heat dissipation channel surface.Because metal level has very high thermal conductivity, so the heat conduction that laser active district can be made to produce by this floor is to larger metallic region, thus reach the object that heat radiation reduces thermal resistance.
Fig. 2 (a) is depicted as etching hole and is etched to back contact layer 5 and utilizes P electrode metal cladding 11 to cover the radiator structure of semiconductor laser resonator completely, most of heat conduction extremely large-area P electrode metal cladding 11 that laser can produce by this kind of structure heat dissipation channel, therefore thermal resistance is lower.Fig. 2 (b) is depicted as etching hole and is etched to buried silicon oxide layer 2 and utilizes P electrode metal cladding 11 to cover the radiator structure of semiconductor laser resonator completely.Fig. 2 (c) is depicted as etching hole and is etched to layer-of-substrate silicon 1 and utilizes P electrode metal cladding 11 to cover the radiator structure of semiconductor laser resonator completely, the heat that laser produces can almost all conduct in P electrode metal cladding 11 and silicon substrate 1 by the heat dissipation channel of this kind of structure, the most obvious to the improvement of laser heat characteristic.
The invention allows for a kind of manufacture method of the silicon substrate microcavity laser device based on metal restriction radiator structure.The method comprises:
Step 1: processed by SOI sheet, etches silicon waveguide, and grows III/V semiconductor epitaxial wafer, in order to make semiconductor laser resonator.With the SOI wafer of silicon waveguide, comprising: silicon substrate 1; Bury silica (BOX) layer 2, be positioned at above silicon substrate 1; The effect of this layer is mainly used in isolating light field, prevents light loss, the SiO of this layer
2thermal conductivity be 1.27K/ (mK), therefore this layer seriously hinders the transmission of heat to silicon substrate; Top silicon waveguide 3, is positioned at above buried silicon oxide layer 2.The effect of silicon waveguide 3 laser coupled produced in semiconductor laser resonator is entered in silicon waveguide 3 by vertical coupled mode, thus realize bright dipping on silicon.
Step 2: utilize DVS-BCB bonding semiconductor technology, is got up III/V semiconductor epitaxial wafer and the SOI sheet with silicon waveguide 3 by bonded layer 4 bonding.Wherein, bonded layer 4, between III/V semiconductor epitaxial wafer and SOI sheet, realizes light is coupled to silicon waveguide 1 effect from III/V semiconductor epitaxial wafer.In order to realize effective optical coupling, the thickness of bonded layer 4 should be kept at below 500nm.Bonded layer 4 is comparatively large on the impact of laser thermal resistance, and BCB (benzocyclobutene) is a kind of adhesive, and thermal conductivity only has 0.3K/ (mK), therefore considers the heat dissipation characteristics of laser, and the thickness of this layer is the smaller the better.
Step 3: utilize semiconductor processing technology (as photoetching, inductively coupled plasma etching (ICP) technology, PECVD) as described in epitaxial wafer etches semiconductor laser resonator, and make it bottom reservation one deck InP as back contact layer 5, this semiconductor laser resonator mainly comprises: lower limit layer 6, be positioned at the top of back contact layer 5, its shape can be micro-ring, micro-dish, square or other microcavity shapes; Active area 7, is positioned at the top of lower limit layer 6, and shape is identical with lower limit layer 6, and this layer is the main region that heat produces, and is related to the thermal characteristic of device; Upper limiting layer 8, is positioned at the top of active area 7, and shape is identical with active area 7, plays the effect of light field restriction.In this step, directly semiconductor laser resonator center can be carried out etching and form heat dissipation channel; Specifically by being etched to back contact layer 5 bottom it, as shown in Fig. 2 (a), also can being etched to buried silicon oxide layer 2 further, as Fig. 2 (b), or being etched to layer-of-substrate silicon 1, as shown in Fig. 2 (c).Wherein, the degree of depth of etching is darker, then the thermal characteristics of device is better.
Step 4: utilize electron beam evaporation technique to make N electrode metal level 9 on the surface of back contact layer 5, around semiconductor laser resonator, certain distance is had with semiconductor laser resonator, material is Au/Ge/Ni alloy, N electrode metal level 9 can have influence on the thermolysis of P electrode metal cladding 11 with the distance of semiconductor laser resonator and the thickness of N electrode metal level 9, N electrode metal level 9 is nearer with the distance of semiconductor laser resonator, N electrode metal level 9 thickness is larger, and heat dissipation characteristics is better.N electrode metal level 9 should below 50 μm with the distance of semiconductor laser resonator.
Step 5: grow a dielectric isolation layer 10, makes it cover N electrode metal level 9, back contact layer 5 and semiconductor laser resonator surface.The effect of this layer is kept apart with N electrode metal level 9 and semiconductor laser resonator by P electrode metal cladding 11, avoids the strong absorption of metal pair light field and prevent laser to be short-circuited.The thickness of dielectric isolation layer 10 is between less than 5 μm, and blocked up dielectric isolation layer 10, can cause the thermal diffusivity of device to be deteriorated.
Step 6: growth one deck P electrode metal cladding 11, material is Ti/Pt/Au alloy, make patterned P electrode, P electrode metal cladding 11 is positioned at above dielectric isolation layer 10 and semiconductor laser resonator, and covers semiconductor laser resonator side and surface completely.The area of P electrode metal cladding 11 is larger, thickness is thicker, then its thermolysis is better.
The thermal resistance that Fig. 3 (a) is kind of the structure of four shown in Fig. 1 and Fig. 2 is with the variation relation of laser radius.Using dielectric isolation layer 10 (SiO completely
2) restriction, under P electrode metal cladding 11 do not cover the condition of semiconductor laser resonator completely, as shown in Figure 1, thermal resistance the altering a great deal with radius of laser, when laser radius is 10 μm, its thermal resistance is 4.9K/mW; For being etched to back contact layer 5 and utilizing P electrode metal cladding 11 to cover semiconductor laser resonator completely, as shown in Fig. 2 (a), its thermal resistance is 2K/mW; Bury silica 2 for being etched to and utilizing P electrode metal cladding 11 to cover semiconductor laser resonator completely, as shown in Fig. 2 (b), its thermal resistance is 1.7K/mW; For being etched to silicon substrate 1 and utilizing P electrode metal cladding 11 to cover semiconductor laser resonator completely, as shown in Fig. 2 (c), its thermal resistance is 1.1K/mW; In addition, for the metal restriction radiator structure utilizing p-electrode metal cladding 11 to cover semiconductor laser resonator completely, with the minimizing of laser radius, gathering way of its thermal resistance is slower, for kind of the structure of three shown in Fig. 2 (a), (b), (c), when laser radius is reduced to 5 μm from 20 μm, its laser thermal resistance adds 2.8K/mW, 2.6K/mW and 2.1K/mW respectively, and for dielectric isolation layer 10 (SiO
2) restriction, P electrode metal cladding 11 do not cover the silicon substrate microcavity laser device structure of semiconductor laser resonator completely, as shown in Figure 1, its thermal resistance adds 7.6K/mW.Therefore, the silicon substrate microcavity laser device based on metal restriction radiator structure proposed by the invention with utilize SiO
2laser Deng the restriction of other media is compared has very low thermal resistance, therefore improves the performance of laser.
The thermal resistance that Fig. 3 (b) is kind of the structure of four shown in Fig. 1 and Fig. 2 is with the variation relation of BCB bonded layer thickness.For Bonded on Silicon Substrates micro-cavity laser, the thickness of bonded layer 4 is the principal elements affecting laser temperature effect, and bonded layer 4 is thicker, and its thermal resistance is larger.As can be seen from Fig. 3 (b), the thickness of the thermal resistance layer bonded thereto 4 of Bonded on Silicon Substrates micro-cavity laser is substantially linear, for the structure shown in Fig. 1, Fig. 2 (a), (b), (c), the change slope of the laser thermal resistance of its correspondence and the thickness of bonded layer 4 is respectively 2.9,1.5,1.4 and 1.Therefore, with utilize SiO
2laser Deng the restriction of other media is compared, and the silicon substrate microcavity laser device based on metal restriction radiator structure proposed by the invention has better stability.
In the present invention, a kind of the silicon substrate microcavity laser device structure based on metal restriction radiator structure and the production program that utilize DVS-BCB bonding techniques is provided in above-described embodiment, but the present invention is not only confined to this, the change of relevant parameter can be carried out according to the actual requirements to the structure that the present invention sets forth, as long as ensure that laser is covered by metal with structural design.Such as:
What introduce in the implementation case is the micro-cyclic laser of Bonded on Silicon Substrates, and reality also can be micro-dish, square, oval or other polygon microcavitys, as long as to go out to dispel the heat hole and limiting with metal with metal restriction or at microcavity intermediate etch.
The III/V semiconductor epitaxial chip architecture applied in the implementation case mainly comprises three layers, and actual epitaxial slice structure can be made up of the semi-conducting material that multilayer is different, does not affect the metal restriction radiator structure that the present invention proposes.
What apply in the implementation case is DVS-BCB bonding techniques, and reality also can utilize Direct Bonding mode, metal bonding mode or other polymer-bound methods, as long as semi-conducting material and SOI wafer can be bonded together.
What set forth in the implementation case is micro-cyclic laser that the metal of InP-base limits completely, and reality also can be the semiconductor laser of GaAs base or other materials.
Use in the implementation case be P electrode metal Ti/Pt/Au and N electrode metal A u/Ge/Ni as electrode and heat-conducting layer, in practical structures, other metal or the very high material of thermal conductivity also can be utilized as heat-conducting layer.Further, the P electrode metal cladding of growth and the thickness of N electrode metal level also can be different according to actual requirement, and metal level is thicker, and the thermal resistance of its laser is also less.
In the implementation case, that dielectric isolation layer is SiO
2, also can replace with other Ins. ulative material, such as silicon nitride etc., as long as make the refractive index of insulating layer material low.
Semiconductor device fabrication technology used in the implementation case is not only confined to mention in the present invention, corresponding technology also can be utilized to replace, as long as can reach corresponding object.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1., based on a silicon substrate microcavity laser device for metal restriction radiator structure, it is characterized in that, comprising:
With the SOI wafer of silicon waveguide;
Semiconductor epitaxial wafer, it comprises back contact layer and semiconductor laser resonator; Described semiconductor laser resonator is positioned at above described back contact layer, and its intermediate etch is formed with heat dissipation channel;
Bonded layer, for bonding with the SOI wafer of silicon waveguide and semiconductor epitaxial wafer; N electrode metal level, it is positioned at above back contact layer, and around being formed in around described semiconductor laser resonator;
Dielectric isolation layer, it covers N electrode metal level, back contact layer and semiconductor laser resonator surface;
P electrode metal cladding, it is positioned at above dielectric isolation layer and semiconductor laser resonator, and covers semiconductor laser resonator side and heat dissipation channel surface completely.
2. the silicon substrate microcavity laser device based on metal restriction radiator structure according to claim 1, it is characterized in that, wherein, the SOI wafer of described band silicon waveguide comprises:
Layer-of-substrate silicon;
Buried silicon oxide layer, it is positioned at the top of layer-of-substrate silicon;
Top silicon waveguide, is positioned at above buried silicon oxide layer.
3. the silicon substrate microcavity laser device based on metal restriction radiator structure according to claim 1, it is characterized in that, wherein said bonded layer material is BCB, SiO
2or metal.
4. the silicon substrate microcavity laser device based on metal restriction radiator structure according to claim 1, it is characterized in that, wherein said back contact layer is semi-conducting material.
5. the silicon substrate microcavity laser device based on metal restriction radiator structure according to claim 1, it is characterized in that, semiconductor laser resonator, for generation of laser, comprising:
Lower limit layer, is positioned on back contact layer;
Active area, is positioned on lower limit layer;
Upper limiting layer, is positioned on active area.
6. the silicon substrate microcavity laser device based on metal restriction radiator structure according to claim 5, it is characterized in that, described semiconductor laser resonator is micro-ring, micro-dish, ellipse or polygon micro-cavity structure.
7. the silicon substrate microcavity laser device based on metal restriction radiator structure according to claim 2, it is characterized in that, described heat dissipation channel can be etched to back contact layer, bonded layer, buried silicon oxide layer or layer-of-substrate silicon.
8. the silicon substrate microcavity laser device based on metal restriction radiator structure according to claim 1, it is characterized in that, wherein said P electrode metal cladding is positioned at above dielectric isolation layer and semiconductor laser resonator, and covers semiconductor laser resonator side completely.
9., based on a manufacture method for the silicon substrate microcavity laser device of metal restriction radiator structure, it comprises:
Step 1, on the soi wafer etching form silicon waveguide, and growing semiconductor epitaxial wafer;
Step 2, utilize bonded layer by described SOI wafer and semiconductor epitaxial wafer bonding;
Step 3, on described epitaxial wafer, etching forms semiconductor laser resonator, and retains one deck back contact layer in bottom; Meanwhile, heat dissipation channel is formed at formed semiconductor laser resonator intermediate etch;
Step 4, making N electrode metal level on described back contact layer surface, making it around being formed in around described semiconductor laser resonator;
Step 5, growth dielectric isolation layer, make it cover N electrode metal level, back contact layer and semiconductor laser resonator surface;
Step 6, growth P electrode metal cladding, make it be formed in above dielectric isolation layer and semiconductor laser resonator, and cover semiconductor laser resonator side and heat dissipation channel surface completely.
10. method according to claim 9, is characterized in that, N electrode metal level and described semiconductor laser resonator have certain distance, and described distance is below 50 μm.
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| CN109541745B (en) * | 2018-12-14 | 2020-08-11 | 电子科技大学 | Micro-ring resonator with improved coupling area and manufacturing method thereof |
| CN112769033A (en) * | 2020-12-31 | 2021-05-07 | 联合微电子中心有限责任公司 | Back integrated laser device and manufacturing method thereof |
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| CN115799974A (en) * | 2023-02-07 | 2023-03-14 | 度亘激光技术（苏州）有限公司 | Heat conduction structure, preparation method thereof and indirect heat conduction structure |
| CN115799974B (en) * | 2023-02-07 | 2023-05-26 | 度亘激光技术（苏州）有限公司 | Heat conduction structure, preparation method thereof and indirect heat conduction structure |
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