TWM569067U - Electric excitation photon crystal surface-emitting laser device - Google Patents

Abstract

An electroluminescence photonic crystal surface-emitting laser element comprising: a current confinement structure, which is located on the photonic crystal structure and the active layer, and has an aperture; a transparent conductive layer located on the current confinement structure and covering the photon Crystal structure; a positive electrode metal, located on the transparent conductive layer, and has a metal hole; the original system directly etches from the top of the epitaxial structure to the inside to make a photonic crystal, without the need for wafer fusion or epitaxial growth The technology not only can penetrate the laser light, but also has electrical conductivity, and then electrically excites the quantum structure, and then the light energy is emitted from the front surface of the epitaxial structure by the photonic crystal structure, and has a small far field divergence angle and the like. characteristic.

Description

Electrically excited photonic crystal surface-emitting laser element

The present invention relates to an electro-excited photonic crystal surface-emitting laser element, in which a positive electrode metal, a transparent conductive layer, and a current confinement structure cooperate with each other to electrically excite a quantum structure, and then a photonic crystal structure is used to make the light energy from the Lei The front side of the crystal structure emits light.

Photonic crystal (PC) is an artificial crystal, or Metamaterials. The refractive index of this crystal has a periodic distribution in space, and its characteristics are similar to those of solid crystals. The periodic potential and boundary conditions are introduced into the Schrödinger equation. The dispersion relation of the solid crystal can be obtained by solving the characteristic problem, or called Band Structure. By the same token, the periodic refractive index distribution and boundary conditions are introduced into the Maxwell equation, and the energy band structure of the photonic crystal can be obtained by solving the characteristic problem. The propagation behavior of electromagnetic waves in a photonic crystal is similar to that in a solid crystal. When a specific frequency of electromagnetic waves cannot exist in a photonic crystal, that is, similar to a band gap in a solid crystal, it is called a photonic crystal forbidden band ( Forbidden band). Photonic crystals can control the propagation behavior of light, and its application range is very wide, such as photonic crystal laser, photonic crystal fiber and other related applications.

According to the above, photonic crystal lasers are mainly divided into two types, Defect lasers and Band-edge lasers. The operating frequency of the defective laser is in the forbidden band of the photonic crystal, and one or several lattice points are removed as defects in the photonic crystal structure, so that the electromagnetic wave is confined in the defect to form a laser cavity, and the laser is formed. The advantages are extremely high quality factor, low threshold conditions, and the like. The edge-type laser can use the edge energy state of the energy band to approach the zero to achieve slow light effect. It should be such that the life time of the photon in the photonic crystal is lengthened to enhance the interaction between the photon and the gain medium. Since the laser is designed to operate at a flat energy state at the edge of the band, rather than forbidding the energy state in the band, the resonance region is no longer confined to a very small volume, and can be extended to the entire photonic crystal region to achieve a large Area coherent resonance. On the other hand, due to the special diffraction phenomenon of photonic crystals, light is not only coupled on the plane of the photonic crystal, but also diffracts the plane of the photonic crystal, so that the effect of surface emission can be achieved. The advantages of this type of laser are excellent characteristics such as surface-emitting light, large-area light output, small divergence angle, high power output, and easy fabrication of a two-dimensional laser array.

According to the secondary press, the photonic crystal laser can be divided into photoexcited and electrically excited laser according to the excitation source. The photoexcited laser introduces a high-power laser source into the component to generate a large number of electron-hole pair to achieve the laser. Phenomenon; electric excitation laser uses external power supply to supply electrons and holes. In practical applications, electric excitation is the main method. However, the hole structure of photonic crystal makes current injection difficult, and it is necessary to consider the transmission path and distribution of carriers. Therefore, it is difficult to achieve laser excitation than light. It can be seen from the literature review that the process of electrically exciting laser can be roughly divided into two types: wafer fusion (Wafer fusion) and epitaxial growth (Regrowth). For the first time, the former was used by Kyoto University Noda et al. in 1999 to use wafer fusing technology to bond two wafers under high temperature and high pressure, successfully demonstrating the operation of InGaP/InP multiple quantum well laser at room temperature. The maximum output power under pulse wave operation exceeds 20mW, and the far-field divergence angle is less than 1.8 degrees. The latter was published by Noda et al. in 2014. It successfully produced Watt-class InGaAs/ using epitaxial growth technology. AlGaAs multiple quantum well laser, continuous current operation at room temperature, maximum output power up to 1.5W, divergence angle less than 3 degrees.

However, since the current research on the fabrication of electro-excited photonic crystal lasers is mainly based on wafer fusion and epitaxial growth, these two manufacturing methods require more complicated techniques. Surgery. Therefore, the present creator has conceived an electro-excited photonic crystal surface-emitting laser element in view of the above problems, and hopes to complete it in a simpler manner, which is a problem to be solved by the creation.

The main purpose of the present invention is to provide an electro-excited photonic crystal surface-emitting laser element which is directly etched from the uppermost portion of the epitaxial structure to form a photonic crystal, and uses indium tin oxide as an electrode structure to successfully avoid the prior art wafer. The process of fusion and epitaxial growth can not only penetrate the laser light but also have electrical conductivity, so it is very suitable for surface-emitting lasers.

In order to achieve the above object, the technical means adopted by the present invention comprises: a substrate having a first surface and a second surface on the opposite side; and a lower cladding layer on the first surface of the substrate; The active layer is located on the lower cladding layer and has a quantum structure; an upper cladding layer is located on the active layer; a contact layer is located on the upper cladding layer, and The upper cladding layer and the contact layer are of a high-profile type and are provided with a plurality of air holes to form a photonic crystal structure, and a surface of the photonic crystal structure is set to a first predetermined area; a current confinement structure is located at the photon a crystal structure and the active layer, and having an aperture, and the aperture corresponds to a first predetermined region of the photonic crystal structure, causing current flow to be confined to a first predetermined region of the photonic crystal structure; a transparent conductive layer, a system And covering the first predetermined area of the photonic crystal structure, and setting a second predetermined area on the upper surface of the transparent conductive layer, the position of the second predetermined area and the photonic crystal structure a predetermined area is in an upper and lower correspondence relationship; a positive electrode metal is located on the transparent conductive layer and has a metal hole, and the metal hole corresponds to a second predetermined area of the transparent conductive layer, so that the metal hole Does not obscure the photonic crystal structure a first predetermined region; and a back electrode metal on the second surface of the substrate; thereby, the positive electrode metal, the transparent conductive layer, the current confinement structure and the back electrode metal cooperate with each other to electrically excite The quantum structure is further exposed by the photonic crystal structure to a first predetermined region of the photonic crystal structure, an aperture of the current confinement structure, a second predetermined region of the transparent conductive layer, and a metal of the positive electrode metal Outside the hole.

In a preferred embodiment, the upper cladding layer has a thickness ranging from 10 to 500 nm.

In a preferred embodiment, the air holes can be arranged in a two dimensional array.

In a preferred embodiment, the material of the current confinement structure may comprise any one selected from the group consisting of tantalum nitride, hafnium oxide, and polyimide.

In a preferred embodiment, the material of the transparent conductive layer may include any one selected from the group consisting of indium tin oxide, antimony tin oxide, fluorine-doped tin oxide, aluminum zinc oxide, gallium zinc oxide, indium zinc oxide, and zinc oxide. Composition.

In a preferred embodiment, the quantum structure can include at least one quantum dot layer.

In a preferred embodiment, the material of the quantum dot layer may be selected from the group consisting of indium arsenide, gallium nitride, indium gallium arsenide, indium gallium nitride, indium gallium phosphide, indium gallium arsenide, and phosphating. Any of aluminum gallium indium and gallium arsenide gallium indium.

In a preferred embodiment, the quantum structure can include at least one quantum well layer.

In a preferred embodiment, the material of the quantum well layer may include a material selected from the group consisting of indium arsenide, gallium nitride, indium gallium arsenide, indium gallium nitride, indium gallium phosphide, indium gallium arsenide, and phosphating. Any of aluminum gallium indium and gallium arsenide gallium indium.

In a preferred embodiment, the substrate and the lower cladding layer may include a buffer layer.

In a preferred embodiment, the buffer layer and the lower cladding layer may include a first gradation layer.

In a preferred embodiment, the lower cladding layer and the active layer may include a first separate confinement layer heterogeneity; the active layer and the upper cladding layer may include a second separation The local layer is heterogeneous.

In a preferred embodiment, the upper cladding layer and the contact layer may include a second gradation layer.

By means of the above-mentioned technical means, indium tin oxide is used as the transparent conductive layer, and the current confinement structure is used to control the current distribution and slow down the boundary loss of the photonic crystal structure, and the electro-excitation light which is operated at room temperature is successfully displayed.

10A, 10B‧‧‧Electrically excited photonic crystal surface-emitting laser elements

11‧‧‧Substrate

111‧‧‧ first surface

112‧‧‧ second surface

12‧‧‧ under cladding

13‧‧‧Active layer

131‧‧‧Quantum structure

131A‧‧·Quantum layer

131B‧‧‧Quantum well

1311‧‧‧ Quantum dots

1312‧‧‧ Coverage

1313‧‧‧ spacer

14‧‧‧Upper coating

141‧‧‧Air holes

15‧‧‧Photonic crystal structure

151‧‧‧Photonic crystal structure upper surface

16‧‧‧ Current Limiting Structure

161‧‧‧ aperture

17‧‧‧Transparent conductive layer

171‧‧‧Top surface of transparent conductive layer

18‧‧‧ positive electrode metal

181‧‧‧Metal hole

19‧‧‧Negative electrode metal

A ₁ ‧‧‧First scheduled area

A ₂ ‧‧‧Second scheduled area

B‧‧‧buffer layer

C‧‧‧Contact layer

F‧‧‧Photonic Crystal Graphics

G ₁ ‧‧‧First Gradient Layer

G ₂ ‧‧‧Second gradient

L ₁ ‧‧‧ outside length

L ₂ ‧‧‧inside length

M‧‧‧hard mask

R‧‧‧positive photoresist

S ₁ ‧‧‧ first separate localized heterostructure

S ₂ ‧‧‧Second separate confined heterostructure

T‧‧‧ trench

W‧‧‧ epitaxial structure

A‧‧ cycle

Figure 1A is a schematic diagram of the epitaxial structure of the present invention.

Figure 1B is a schematic diagram of the creation of a hard mask.

Figure 1C is a schematic diagram of the definition of a photonic crystal pattern.

Figure 1D is a schematic diagram of the transfer photonic crystal pattern of the present invention.

Figure 1E is a schematic view of the present invention to remove the hard mask.

Figure 1F is a schematic diagram of the etching of the high stage.

Figure 1G is a schematic diagram of the current limited structure of the present creation.

Figure 1H is a schematic diagram of the creation of a transparent conductive layer.

Figure 1I is a schematic diagram of the inventive trench as an isolation boundary.

Fig. 1J is a schematic view showing the thinning of the substrate of the present invention.

Figure 1K is a schematic diagram of the metal deposition of the positive electrode of the present invention.

Figure 1L is a schematic diagram of the metal deposition of the back electrode of the present invention.

Figure 2A is an electron micrograph of a top view of the photonic crystal structure of the present invention.

Figure 2B is an electron micrograph of a side view of the photonic crystal structure of the present invention.

Figure 3 is a schematic illustration of another preferred embodiment of the present invention.

Figure 4A is a schematic diagram of the inventive quantum structure.

Figure 4B is a schematic illustration of another preferred embodiment of the inventive quantum structure.

Figure 5 is a top view of the creation.

Figure 6 is an electron micrograph of the side view of the present creation.

First, referring to FIG. 1A to FIG. 1L, a preferred embodiment of an electrically-excited Photonic-Crystal Surface-Emitting Lasers component 10A includes: a substrate. 11. The first surface 111 and the second surface 112 of the opposite side are provided. In this embodiment, the material of the substrate 11 may include a material selected from the group consisting of gallium nitride (GaN), gallium arsenide (GaAs), and indium phosphide. (InP) is constituted by any of them, but is not limited thereto.

A Cladding layer 12 is fastened on the first surface 111 of the substrate 11. In this embodiment, the material of the lower cladding layer 12 may be selected from the group consisting of aluminum gallium arsenide (AlGaAs) and arsenic. Gallium (GaAs), aluminum gallium nitride (AlGaN), aluminum gallium indium arsenide (AlGaInAs), or aluminum gallium indium arsenide (AlGaInP) is used, but is not limited thereto.

An active layer 13 is ligated on the lower cladding layer 12 and has a Quantum Structure 131.

A Cladding layer 14 is ligated on the active region 13. In this embodiment, the thickness of the upper cladding layer 14 ranges from 10 to 500 nm, and the upper cladding layer 14 is matched. The material system may include any one selected from the group consisting of aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAs), aluminum gallium nitride (AlGaN), aluminum gallium arsenide (AlGaInAs), and aluminum gallium phosphide (AlGaInP). It is constituted, but is not limited thereto.

A contact layer (C) is located on the upper cladding layer 14. In this embodiment, the material of the contact layer (C) may include a layer selected from gallium nitride (GaN) and gallium arsenide. (GaAs) or indium gallium arsenide (InGaAsP) is used, but is not limited thereto.

As shown in FIG. 1A, the substrate 11, the lower cladding layer 12, the active layer 13, the upper cladding layer 14, and the contact layer (C) form an epitaxial structure (W), which does not limit epitaxial growth. The number of layers.

As shown in FIG. 1B, a hard mask (M) is formed, and tantalum nitride (SiNx) is deposited on the epitaxial structure (W), but is not limited thereto.

As shown in FIG. 1C, a photonic crystal pattern (F) is defined, and a positive photoresist (R) is spin-coated on the epitaxial structure (W), and then the photonic crystal pattern (F) is defined in the positive photoresist (R). In the above, the photonic crystal region is a square of 290 μm, but is not limited thereto.

As shown in FIG. 1D, the photonic crystal pattern (F) is transferred, the photonic crystal pattern (F) is first transferred into the hard mask (M), and the positive photoresist (R) is removed, and then the photon is removed. The crystal pattern (F) is transferred into the epitaxial structure (W). Since the quantum structure 131 limits most of the light field of the waveguide mode to the region of the active layer 13, the etching depth needs to be deeper to obtain stronger coupling. The intensity, when the etching depth is greater than 500 nm, the photonic crystal will have better coupling efficiency, but is not limited thereto.

As shown in FIG. 1E, the hard mask (M) is removed, but is not limited thereto.

As shown in FIG. 1F, a 310 μm square platform is defined by a yellow light process, and the etching depth is about 450 nm, so that the upper cladding layer 14 and the contact layer (C) are in a Mesa type and are provided with a plurality of air holes. (air hole) 141, forming a photonic crystal structure 15, and the upper surface 151 of the photonic crystal structure 15 is set to a first predetermined area (A ₁ ), and the purpose of etching the high stage is to help the light confinement in the photonic crystal. In the present embodiment, the period (a) of the photonic crystal structure 15 is 385 nm, 388 nm, 390 nm, 393 nm, and 395 nm, but is not limited thereto. In addition, as shown in FIG. 2A and FIG. 2B, each of the air holes 141 has a cylindrical shape, and each of the air holes 141 has a depth of 520 nm to 540 nm and a diameter of 130 to 140 nm, and the air holes 141 can be arranged. Two-dimensional array, but is not limited to this.

As shown in FIG. 1G, a current confinement structure 16 is fabricated because a photonic crystal having an infinite period does not theoretically have a Boundary effect. However, photonic crystals in practical applications are finite-period, so the boundary at the crystal will There is energy loss, but if the area of the photonic crystal is larger than the area where the component has gain, the loss caused by the boundary effect can be slowed down, and the photonic crystal area is two to three times the gain area, which can successfully generate laser phenomenon, so the use The yellow light process defines a circular aperture pattern in the middle of the first predetermined region (A ₁ ) of the photonic crystal structure 15 having a diameter of 150 μm, redepositing tantalum nitride 120 nm, and utilizing lift (Lift) Off) removing excess tantalum nitride such that the current confinement structure 16 is tied to the photonic crystal structure 15 and the active layer 13 and has an aperture 161 corresponding to the photonic crystal structure 15 a first predetermined area (a _1), so that current flows in a first predetermined limited area (a ₁₎ of the photonic crystal structure 15, so that the laser mode is similar to exist in an infinite photonic crystal in the present embodiment, Current limitations of the material system of structure 16 may include one selected from silicon nitride (an SiNx), silicon oxide (the SiOx), polyimide (Polyimide) either a configuration, but is not limited thereto.

As shown in FIG. 1H, a transparent conductive layer 17 is formed because the edge-type laser has a surface-emitting property. If a large-area metal is applied to the light-emitting region to affect the laser light, indium tin oxide (Indium Tin Oxide) is used. As the transparent conductive layer 17, ITO has both the characteristics of transporting carriers and light transmission. An 225 nm indium tin oxide film is grown by an E-gun evaporator, and the transparent conductive layer 17 is tied to the current confinement structure 16 and covers the first predetermined area of the photonic crystal structure 15 (A). ₁ ), and the upper surface 171 of the transparent conductive layer 17 is set to a second predetermined area (A ₂ ), the position of the second predetermined area (A ₂ ) and the first predetermined area of the photonic crystal structure 15 (A) ₁ ) The position of the upper and lower correspondences is present. In this embodiment, the material of the transparent conductive layer 17 may be selected from the group consisting of indium tin oxide (ITO), antimony tin oxide (ATO), fluorine-doped tin oxide (FTO), and oxidation. Aluminum zinc (AZO), gallium zinc oxide (GZO), indium zinc oxide (IZO), or zinc oxide (ZnO) is used, but is not limited thereto.

As shown in FIG. 1I, after the transparent conductive layer 17 is plated, a trench (T) is defined as an isolation boundary by a yellow light process, and the trench is etched by using an indium tin oxide etching solution ( The indium tin oxide in T) is removed, but is not limited thereto.

As shown in FIG. 1J, a positive electrode metal 18 is deposited by using a yellow light process to define an electrode pattern, and depositing two metals, titanium (Ti) and gold (Au), and then removing excess metal by lift-off, so that The positive electrode metal 18 is located on the transparent conductive layer 17 and has a metal hole 181, and the metal hole 181 corresponds to the second predetermined area (A ₂ ) of the transparent conductive layer 17, so that the metal hole 181 is not The first predetermined region (A ₁ ) of the photonic crystal structure 15 is shielded, but is not limited thereto.

As shown in FIG. 1K, the thickness of the substrate 11 is thinned so that the second surface 112 of the substrate 11 forms a mirror-like surface, but is not limited thereto.

As shown in FIG. 1L, a back electrode metal 19 is deposited and three metals of nickel (Ni), germanium (Ge), and gold (Au) are deposited, and the back electrode metal 19 is tied to the second surface 112 of the substrate 11. on. Finally, Rapid Thermal Annealing (RTA), that is, the electro-excited photonic crystal surface-emitting laser element 10A is completed, but is not limited thereto.

In another preferred embodiment, as shown in FIG. 3, an electrically excited photonic crystal surface-emitting type lightning The element 10B includes a buffer layer (B) between the substrate 11 and the lower cladding layer 12. In this embodiment, the material of the buffer layer (B) may include It is composed of any one of gallium nitride (GaN), gallium arsenide (GaAs), and indium phosphide (InP); the thickness of the buffer (B) is 200 nm, but is not limited thereto.

The buffer layer (B) and the lower cladding layer 12 may include a first graded layer (GRIN) (G ₁ ). In this embodiment, the underlying layer 12 is arsenicized. The composition of aluminum gallium is Al _0.4 Ga _0.6 As, and the ratio of aluminum is changed from 0.4 to 0.1, the purpose of which is to alleviate the steep barrier between the gallium arsenide and the aluminum gallium arsenide interface; the thickness of the lower cladding layer 12 is 1.3. Μm; the material of the first graded layer (G ₁ ) may include aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAs), aluminum gallium nitride (AlGaN), aluminum gallium indium arsenide (AlGaInAs), The aluminum phosphide indium arsenide (AlGaInP) is composed of any one of the layers; the thickness of the first gradation layer (G ₁ ) is 150 nm, but is not limited thereto.

The lower cladding layer 12 and the active layer 13 may include a first Separate Confinement Heterostructure (SCH) (S ₁ ); the active layer 13 and the upper cladding layer 14 are The method may include: providing a second Separate Confinement Heterostructure (SCH) (S ₂ ). In this embodiment, the first separately confined layer heterostructure (S ₁ ) is heterogeneous with the second separately confined layer (S _{2 )} The material may include any one selected from the group consisting of aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAs), aluminum gallium nitride (AlGaN), aluminum gallium indium arsenide (AlGaInAs), and aluminum gallium phosphide (AlGaInP). a composition whose function can respectively achieve the limitation of the carrier and the light field; the thickness of the first divided localized heterostructure (S ₁ ) is 130 nm; the thickness of the second separately localized heterostructure (S ₂ ) is 105 nm However, it is not limited to this.

The upper cladding layer 14 and the contact layer (C) may include a second graded layer (GRIN) (G ₂ ), and the upper cladding layer 14 and the second graded layer ( G ₂ ) and the contact layer (C) are of a high-profile type and provided with a plurality of air holes 141 to form the photonic crystal structure 15. In this embodiment, the composition of the aluminum gallium arsenide of the upper cladding layer 14 is Al _0.4. Ga _0.6 As, the ratio of aluminum is changed from 0.4 to 0.1, the purpose of which is to alleviate the steep barrier between the gallium arsenide and the aluminum gallium arsenide interface; the thickness of the upper cladding 14 is 200 nm; the thickness of the contact layer (C) 100 nm; the material of the second graded layer (G ₂ ) may include aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAs), aluminum gallium nitride (AlGaN), aluminum gallium indium arsenide (AlGaInAs) The aluminum phosphide indium arsenide (AlGaInP) is composed of any one of the layers; the thickness of the second gradation layer (G ₂ ) is 150 nm, but is not limited thereto.

The substrate 11, the buffer layer (B), the first gradation layer (G ₁ ), the lower cladding layer 12, the first separately confined layer heterostructure (S ₁ ), the active layer 13, the The second separate localized heterostructure (S ₂ ), the upper cladding layer 14, the second gradation layer (G ₂ ), and the contact layer (C) form the epitaxial structure (W), and does not limit epitaxial growth The number of layers. In addition, the structure above the active layer 13 is a P-type semiconductor, and the dopant is a germanium atom (Be), wherein the uppermost contact layer (C) is heavily doped (Havily doped) for the purpose of oxidation. Indium tin forms a good ohmic contact, while the structure under the active layer is an N-type semiconductor, the dopant is a germanium atom (Si), the concentration of the two dopants is 10 ¹⁸ cm ^-3 , and the heavily doped region is 10 ¹⁹ cm ^-3 . The substrate 11, the buffer layer (B), the first gradation layer (G ₁ ), the lower cladding layer 12, the first separately confined layer (S ₁ ), and the second separately confined layer (S) are disclosed. ₂ ) The material range of the upper cladding layer 14, the second gradation layer (G ₂ ) and the contact layer (C) also enables the wavelength range to include blue to infrared light.

As shown in FIG. 4A, the quantum structure 131 may include at least one quantum dot layer 131A. In this embodiment, the material of the quantum dot layer 131A may include an indium arsenide (InAs) or gallium nitride (GaN). InGaAs, InGaN, InGaP, InGaP, AlGaInAs, AlGaInP, GaAs Indium Gallium Phosphide (GaInAsP) Any one of them is constituted, but is not limited thereto. In addition, the quantum structure 131 has seven layers of the quantum dot layer 131A. The quantum dot layer 131A further includes a quantum dot 1311, a cap layer 1312 and a spacer layer 1313. The quantum dot 1311 covers the cap layer 1312. The spacer layer 1313 is provided on the cover layer 1312, and the material of the quantum dot 1311 is indium arsenide and its thickness is 2.2 ML (Mono layer), and the material of the cover layer 1312 is indium gallium arsenide, and its composition formula The material of In _0.15 Ga _0.85 As and its thickness of 5 nm and the spacer layer 1313 is gallium arsenide and its thickness is 45 nm, but is not limited thereto.

As shown in FIG. 4B, the quantum structure 131 may include at least one quantum well layer 131B. In this embodiment, the material of the quantum well layer 131B may include an indium arsenide (InAs) or gallium nitride (GaN). InGaAs, InGaN, InGaP, InGaP, AlGaInAs, AlGaInP, GaAs Indium Gallium Phosphide (GaInAsP) Any one of them is constituted, but is not limited thereto.

According to the above, the quantum structure 131 is used as a gain medium, and an electro-excited photonic crystal energy band edge type laser which is operated at room temperature is successfully fabricated, and the period (a) of the photonic crystal structure 15 is 385 nm, 388 nm, 390 nm, and 393 nm. Or 395 nm, the laser emission wavelength is around 1.3 μm, the laser wavelength becomes longer as the period of the photonic crystal structure 15 becomes larger, and is not limited to the period of the photonic crystal structure 15 (a) is 385 nm, 388nm, 390nm, 393nm or 395nm, so the laser emission wavelength is not limited to 1.3μm, and the process does not require wafer fusion or epitaxial re-growth complex technology, choose to directly etch from the top of the epitaxial structure (W) to the inside The photonic crystal structure 15 is fabricated, and indium tin oxide is coated over the photonic crystal structure 15 as the transparent conductive layer 17 to make light The light can be emitted from the front surface of the epitaxial structure (W), and the photonic crystal energy band edge type laser has excellent characteristics such as surface emitting light and small far field divergence angle, so the coupling efficiency of the optical fiber is superior to that of the edge type laser (Edge). -emitting laser), the laser operating in this band has high application potential in the field of optical fiber communication, but is not limited to this.

Based on such a configuration, the aspect of the preferred embodiment described above differs only in the material of the epitaxial growth, and can be achieved by the positive electrode metal 18, the transparent conductive layer 17, the current confinement structure 16, and the back. The electrode metal 19 cooperates with each other to electrically excite the quantum structure 131, and the photonic crystal structure 15 can face the first predetermined region (A ₁ ) of the photonic crystal structure 15 and the aperture of the current confinement structure 16 161, the second predetermined region (A ₂ ) of the transparent conductive layer 17 is outside the metal hole 181 of the positive electrode metal 18, and as shown in FIG. 5, the length (L ₁ ) of the outer side of the metal hole 181 is 650 μm and The inner length (L ₂ ) is 300 μm, and the second predetermined region (A ₂ ) of the transparent conductive layer 17 is present in the metal hole 181, and as shown in FIG. 6, the photonic crystal structure 15 is sequentially formed on the photonic crystal structure 15. The current confinement structure 16 and the transparent conductive layer 17 are compared with those of the current confinement structure 16 and the transparent conductive layer 17 on the photonic crystal structure 15 as shown in FIG. 2A and FIG. 2B. The confinement structure 16 and the transparent conductive layer 17 are fabricated on the electrical excitation Photonic crystal surface-emitting laser elements 10A, 10B where the.

In summary, the structure revealed by this creation is unprecedented, and it can achieve the improvement of efficacy, and it can be used for industrial utilization. It fully complies with the new patent requirements, and invites the bureau to grant patents to encourage innovation. There is no sense of morality.

However, the drawings and descriptions disclosed above are only preferred embodiments of the present invention, and modifications or equivalent changes made by those skilled in the art in accordance with the spirit of the present invention should still be included in the scope of the patent application.

Claims (13)

An electroluminescent photonic crystal surface-emitting laser element comprising: a substrate having a first surface and a second surface opposite to each other; and a lower cladding layer positioned on the first surface of the substrate; a layer on the lower cladding layer and having a quantum structure; an upper cladding layer on the active layer; a contact layer on the upper cladding layer and on the upper layer The coating layer and the contact layer are of a high-profile type and are provided with a plurality of air holes to form a photonic crystal structure, and a surface of the photonic crystal structure is set to a first predetermined area; a current confinement structure is tied to the photonic crystal The structure and the active layer have an aperture, and the aperture corresponds to a first predetermined area of the photonic crystal structure, so that current flow is confined to a first predetermined area of the photonic crystal structure; a transparent conductive layer is tied to The current confinement structure covers the first predetermined area of the photonic crystal structure, and the upper surface of the transparent conductive layer defines a second predetermined area, the position of the second predetermined area and the first of the photonic crystal structure The position of the fixed region presents an upper and lower correspondence relationship; a positive electrode metal is located on the transparent conductive layer and has a metal hole, and the metal hole corresponds to a second predetermined region of the transparent conductive layer, so that the metal hole is not Masking a first predetermined region of the photonic crystal structure; and a back electrode metal on the second surface of the substrate; thereby, the positive electrode metal, the transparent conductive layer, the current confinement structure, and the back electrode metal Interacting with each other to electrically excite the quantum structure, and the photonic crystal structure can be surface-exposed to a first predetermined region of the photonic crystal structure, an aperture of the current confinement structure, and a second predetermined region of the transparent conductive layer to The metal electrode of the positive electrode metal is outside. The electro-excited photonic crystal surface-emitting laser element according to claim 1, wherein the upper cladding layer has a thickness ranging from 10 to 500 nm. The electrically activated photonic crystal surface-emitting laser element of claim 1, wherein the air hole system is arranged in a two-dimensional array. The electroluminescent photonic crystal surface-emitting laser element according to claim 1, wherein the material of the current confinement structure may comprise any one selected from the group consisting of tantalum nitride, hafnium oxide, and polyimide. The electroluminescent photonic crystal surface-emitting laser element according to claim 1, wherein the material of the transparent conductive layer may be selected from the group consisting of indium tin oxide, antimony tin oxide, fluorine-doped tin oxide, aluminum zinc oxide, and oxidation. Any of gallium zinc, indium zinc oxide, and zinc oxide. The electroluminescent photonic crystal face-emitting laser element of claim 1, wherein the quantum structure system comprises at least one quantum dot layer. The electro-excited photonic crystal surface-emitting laser element according to claim 6, wherein the material of the quantum dot layer may be selected from the group consisting of indium arsenide, gallium nitride, indium gallium arsenide, indium gallium nitride, and phosphorus. Indium gallium arsenide, aluminum gallium arsenide arsenide, aluminum gallium phosphide indium phosphide, or gallium arsenide arsenide phosphide. The electrically excited photonic crystal surface-emitting laser element of claim 1, wherein the quantum structure system comprises at least one quantum well layer. The electro-excited photonic crystal surface-emitting laser element according to claim 8, wherein the material of the quantum well layer may be selected from the group consisting of indium arsenide, gallium nitride, indium gallium arsenide, indium gallium nitride, and phosphorus. Indium gallium arsenide, aluminum gallium arsenide arsenide, aluminum gallium phosphide indium phosphide, or gallium arsenide arsenide phosphide. The electroluminescent photonic crystal face-emitting laser element of claim 1, wherein the substrate and the lower cladding layer comprise a buffer layer. The electroluminescent photonic crystal face-emitting laser element of claim 10, wherein the buffer layer and the lower cladding layer comprise a first gradation layer. The electro-excited photonic crystal surface-emitting laser element according to claim 1, wherein the lower cladding layer and the active layer may include a first separate localized layer heterogeneity; the active layer and the upper layer Between the cladding layers can include a second separate localized layer of heterogeneity. The electroluminescent photonic crystal face-emitting laser element of claim 1, wherein the upper cladding layer and the contact layer comprise a second gradation layer.