CN112290382B - Semiconductor laser and manufacturing method thereof - Google Patents
Semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN112290382B CN112290382B CN202011544095.5A CN202011544095A CN112290382B CN 112290382 B CN112290382 B CN 112290382B CN 202011544095 A CN202011544095 A CN 202011544095A CN 112290382 B CN112290382 B CN 112290382B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
Abstract
The invention discloses a semiconductor laser and a manufacturing method thereof, wherein a first waveguide layer and a second waveguide layer of a passive region are integrated in a resonant cavity in a butt-joint growing mode, when laser emission is realized by light gain of current injected into an active region and output is carried out, a light field passes through a double-layer waveguide of the passive region, so that the size of the light spot in the vertical direction is effectively increased when the light field is coupled to a lower-layer waveguide and reaches an output end face, the light spot in a near field is expanded, the divergence angle of the far field is reduced, the output quality of a light beam is improved, the adjustment of the light beam is facilitated, the optical fiber coupling efficiency is improved, and the packaging coupling cost. Meanwhile, when the optical field is transmitted from the double-layer waveguide of the passive region to the single-layer waveguide of the active region, compared with the case of only adopting the single-layer waveguide, the loss is increased, so that the loss of external feedback light is increased, and the anti-reflection capability of the laser is improved.
Description
Technical Field
The invention relates to the field of semiconductor light-emitting devices, in particular to a semiconductor laser and a manufacturing method thereof.
Background
The semiconductor laser has been widely used in the fields of optical fiber communication, pump source, material processing, optical sensing, laser radar, etc. because of its advantages of small size, light weight, high electro-optical conversion efficiency, stable performance, high reliability, long service life, etc. However, the active region of the semiconductor laser generally adopts a multi-quantum well structure, the thickness of the active region is 100-200 nm, the width of the active region is 2-5 μm, the refractive index distribution of the light-emitting end face of the semiconductor laser is not symmetrical, so that the far-field characteristic of the semiconductor laser is represented as an asymmetric elliptical light spot, particularly in the vertical direction, the thickness of the active region is very thin, the far-field divergence angle in the vertical direction is generally 40-60 degrees and is far greater than the divergence angle in the horizontal direction, the adjustment of light beams is not facilitated, the optical fiber coupling efficiency is reduced, and the use of.
Disclosure of Invention
The present invention is directed to a semiconductor laser and a method for fabricating the same, and mainly aims to solve the above technical problems in the prior art.
In a first aspect, according to an embodiment of the present invention, a semiconductor laser is provided, which includes a resonant cavity, where the resonant cavity includes an active region and a passive region formed by double epitaxial butt-joint growth with the active region;
the active region comprises a substrate, and a first lower buffer layer, a grating layer, a first limiting layer, a lower waveguide layer, a multi-quantum well layer, an upper waveguide layer and a second limiting layer which are sequentially grown on the substrate from bottom to top;
the passive region comprises a second lower buffer layer, a first waveguide layer, a waveguide spacing layer, a second waveguide layer and a first upper buffer layer which are epitaxially grown on the first lower buffer layer from bottom to top in sequence;
the active region and the passive region are provided with an etching stop layer, a ridge structure is formed on the etching stop layer, and the ridge structure sequentially comprises an upper cladding layer, and an ohmic contact layer and an electrode layer which are grown on the upper cladding layer and correspond to the active region.
Specifically, an included angle is formed between a butt joint end face formed by pointing the active region and the passive region and a vertical plane.
Specifically, the included angle is 10-20 degrees.
Specifically, the length of the active region is 120-2000 μm, and the length of the passive region is 20-100 μm.
Specifically, the refractive indexes of the first waveguide layer and the second waveguide layer are 3.4-3.5, and the refractive index of the waveguide spacing layer is 3.18-3.24.
Specifically, the multiple quantum well layer is an InGaAlAs multiple quantum well layer or an InGaAsP multiple quantum well layer, the first waveguide layer and the second waveguide layer are both InGaAsP waveguide layers, and material band gaps of the first waveguide layer and the second waveguide layer are larger than material band gaps of the multiple quantum well layer.
Specifically, the thicknesses of the first waveguide layer and the second waveguide layer are both 150-400 nm, and the thickness of the waveguide spacing layer is 200-800 nm.
Specifically, an antireflection film is arranged on the end face of the resonant cavity corresponding to the passive region, and a high-reflection film is arranged on the end face of the resonant cavity corresponding to the active region.
In a second aspect, according to an embodiment of the present invention, there is provided a method for manufacturing a semiconductor laser, including:
s1, epitaxially growing a first lower buffer layer, a grating layer, a first limiting layer, a lower waveguide layer, a multi-quantum well layer, an upper waveguide layer and a second limiting layer on the substrate in sequence;
s2, manufacturing a silicon dioxide mask by utilizing photoetching, covering the active region, and etching the first lower buffer layer, the grating layer, the first limiting layer, the lower waveguide layer, the multi-quantum well layer, the upper waveguide layer and the second limiting layer of the passive region by a dry etching and humidifying corrosion method;
s3, sequentially growing a second lower buffer layer, a first waveguide layer, a waveguide spacing layer, a second waveguide layer and a first upper buffer layer in MOCVD (metal organic chemical vapor deposition) by secondary epitaxy;
s4, after the silicon dioxide mask is removed, continuing to epitaxially grow an etching stop layer, an upper cladding layer and an ohmic contact layer;
s5, manufacturing a photoresist mask through photoetching to cover the ohmic contact layer of the active region, and etching the ohmic contact layer of the passive region by using a wet etching method;
s6, manufacturing a silicon dioxide protective layer by utilizing photoetching, exposing the ohmic contact layer of the active region, covering other regions, manufacturing an electrode pattern mask by utilizing photoetching, manufacturing a Ti-Pt-Au electrode by utilizing evaporation, thickening the electrode by electroplating or chemical plating Au, and stripping metal in other regions to form an electrode layer.
Specifically, the etching depth of the dry etching and wet etching is 1000-2000 nm.
The embodiment of the invention provides a semiconductor laser and a manufacturing method thereof, wherein the semiconductor laser integrates a first waveguide layer and a second waveguide layer of a passive region in a resonant cavity in a butt-joint growing mode, when the current injected into an active region realizes light gain to realize lasing and output, the light gain passes through a double-layer waveguide of the passive region, so that the size of a light spot in the vertical direction is effectively increased when an optical field is coupled to a lower-layer waveguide and reaches an output end face, a near-field light spot is expanded, a far-field divergence angle is reduced, the output quality of a light beam is improved, the adjustment of the light beam is facilitated, the optical fiber coupling efficiency is improved, and the packaging coupling cost is reduced. Meanwhile, when the optical field is transmitted from the double-layer waveguide of the passive region to the single-layer waveguide of the active region, compared with the case of only adopting the single-layer waveguide, the loss is increased, so that the loss of external feedback light is increased, and the anti-reflection capability of the laser is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a longitudinal structural view of a semiconductor laser according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a butt end face of a semiconductor laser according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a lateral cross-sectional view of an active region of a semiconductor laser according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a transverse cross-section of a passive region of a semiconductor laser according to an embodiment of the present invention;
fig. 5 is a diagram of simulation results of transmission of an optical field from an active-segment quantum well region to a passive-segment double-layer waveguide in the semiconductor laser provided in the embodiment of the present invention;
fig. 6 is a diagram of a lateral mode field distribution of an active region of a semiconductor laser according to an embodiment of the present invention;
fig. 7 is a diagram of a transverse mode field distribution of an inactive region of a semiconductor laser according to an embodiment of the present invention;
fig. 8 is a graph of far field divergence angle of the output of the active and passive regions of a semiconductor laser provided by an embodiment of the present invention.
The optical waveguide structure comprises a substrate 1, a first lower buffer layer 2, a grating layer 3, a first limiting layer 4, a lower waveguide layer 5, a multi-quantum well layer 6, an upper waveguide layer 7, a second limiting layer 8, an etch stop layer 9, an upper cladding layer 10, an ohmic contact layer 11, an electrode layer 12, a second lower buffer layer 13, a first waveguide layer 14, a waveguide spacing layer 15, a second waveguide layer 16, a first upper buffer layer 17, an antireflection film 18 and a high-reflection film 19.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following embodiments, the x direction in fig. 1 to 8 is the length direction of the resonant cavity, i.e., the length direction of each layer; the Y direction is the width direction of the resonant cavity, namely the width direction of each layer; the Z direction is the height direction of the resonator, which is also the vertical direction.
In a first aspect, as shown in fig. 1, 3 and 4, according to an embodiment of the present invention, there is provided a semiconductor laser including a resonant cavity, the resonant cavity including an active region and a passive region formed by double epitaxial butt-growth with the active region; the active region comprises a substrate 1, and a first lower buffer layer 2, a grating layer 3, a first limiting layer 4, a lower waveguide layer 5, a multiple quantum well layer 6, an upper waveguide layer 7 and a second limiting layer 8 which are sequentially grown on the substrate 1 from bottom to top; the passive region comprises a second lower buffer layer 13, a first waveguide layer 14, a waveguide spacing layer 15, a second waveguide layer 16 and a first upper buffer layer 17 which are epitaxially grown on the first lower buffer layer 2 from bottom to top in sequence; the passive region and the active region are provided with an etching stop layer 9, a ridge structure is formed on the etching stop layer 9, and the ridge structure sequentially comprises an upper cladding layer 10, and an ohmic contact layer 11 and an electrode layer 12 which are grown on the upper cladding layer 10 and correspond to the active region.
When the semiconductor laser works, only current is injected into the active region to provide gain, and the passive region plays a role in expanding a mode field and does not provide gain. And the ridge structure is adopted, so that the structure is simple and the manufacturing is convenient.
Specifically, the substrate 1 functions to support the entire structure, and the substrate 1 may be a sapphire substrate, a silicon-based substrate, a silicon carbide substrate, or a composite substrate of the above substrates.
The first lower buffer layer 2, the second lower buffer layer 13, and the first upper buffer layer 17 function to buffer and reduce resistance.
The first limiting layer 4 and the second limiting layer 8 play a role in reducing optical loss, limiting carrier diffusion and reducing hole leakage current so as to reduce the threshold current of the device and improve the efficiency. Further, the first confinement layer 4 may be an N-type confinement layer, and the second confinement layer 8 may be a P-type confinement layer.
The grating layer 3 reflects light with a specific wavelength, so that the specific wavelength is selected, and distributed feedback is realized; the grating layer 3 is a wavelength selective grating or a one-dimensional photonic crystal. Optionally, the wavelength selective grating is a uniform grating, a chirped grating, an interpolated grating, or a phase shifted grating.
The upper cladding layer 10 can enable the near-field light spot to be far away from the surface of the device, and the absorption of light by surface defects is reduced.
The etch stop layer 9 serves as an etch barrier.
The ohmic contact layer 11 plays a role in transmitting a current value required by a laser, and the metal of the ohmic contact layer 11 is commonly Ti-Pt-Au, wherein Ti plays a role of an adhesive, and Pt plays a role in transition and blocking, which is beneficial to improving the stability and reliability of the device.
The electrode layer 12 is used to access an external power source to provide electrical stimulation. Further, the electrode layer 12 may be a P-type electrode layer.
In particular, in some possible embodiments, the semiconductor laser layers may use materials, thicknesses, and refractive indices as shown in the following table. It is understood that in other implementations, the materials, thicknesses, and refractive indices of the various layers are adjusted by the practitioner according to actual requirements and are not strictly limited herein.
TABLE 1 materials, thicknesses and refractive indices of semiconductor laser
| Dielectric layer | Material | Thickness (nm)） | |
| Substrate | |||
| 1 | InP | —— | 3.2 |
| First buffer layer | InP | —— | 3.2 |
| | InGaAsP | 45 | 3.24 |
| N-type confinement layer | InGaAsP | 35 | 3.2 |
| | InGaAsP or InGaAlAs | 30 | 3.45 |
| Multiple | InGaAsP or InGaAlAs | 90 | 3.48 |
| | InGaAsP or InGaAlAs | 30 | 3.45 |
| P-type confinement layer | InGaAsP | 35 | 3.2 |
| Second buffer layer | InP | —— | 3.2 |
| | InGaAsP | 200 | 3.45 |
| | InP | 300 | 3.2 |
| | InGaAsP | 200 | 3.45 |
| Second upper buffer layer | InP | —— | 3.2 |
In a specific application process, the semiconductor laser integrates the first waveguide layer 14 and the second waveguide layer 16 of the passive region in a resonant cavity by means of butt-joint growth, that is, a double-layer waveguide is integrated in the passive region. When the current injected into the active region is used for realizing light gain to realize lasing and outputting, the light passes through the double-layer waveguide of the passive region, so that when the light field is coupled to the lower-layer waveguide and reaches the output end face, the size of the light spot in the vertical direction is effectively increased, the near-field light spot is expanded, the far-field divergence angle is reduced, the light beam output quality is improved, the light beam adjustment is facilitated, the optical fiber coupling efficiency is improved, and the packaging coupling cost is reduced. Meanwhile, when the optical field is transmitted from the double-layer waveguide of the passive region to the single-layer waveguide of the active region (i.e., the upper waveguide layer 7, the lower waveguide layer 5 and the multiple quantum well layer 6), compared with the case of only using the single-layer waveguide, the loss is increased, so that the loss of the external feedback light is increased, and the anti-reflection capability of the laser is improved.
Further, as shown in fig. 2, the butt end faces formed by the active region and the passive region in a pointing manner form an included angle with the vertical plane. Preferably, the included angle theta is 10-20 degrees, so that butt joint end face reflection caused by the difference of refractive indexes between the two waveguides is avoided, and the influence of the butt joint end face reflection on a lasing longitudinal mode of the semiconductor laser is reduced.
Furthermore, the length of the active region is 120-2000 μm, and the length of the passive region is 20-100 μm.
Furthermore, the refractive indexes of the first waveguide layer 14 and the second waveguide layer 16 are 3.4-3.5, and the refractive index of the waveguide spacing layer 15 is 3.18-3.24.
Further, the multiple quantum well layer 6 is an InGaAlAs multiple quantum well layer or an InGaAsP multiple quantum well layer, both the first waveguide layer 14 and the second waveguide layer 16 are InGaAsP waveguide layers, and the material band gap of the first waveguide layer 14 and the second waveguide layer 16 is greater than that of the multiple quantum well layer 6.
Further, the thicknesses of the first waveguide layer 14 and the second waveguide layer 16 are both 150-400 nm, and the thickness of the waveguide spacing layer 15 is 200-800 nm.
Further, as shown in fig. 1, an anti-reflection film 18 is disposed on the end surface of the resonant cavity corresponding to the passive region, and a high-reflection film 19 is disposed on the end surface of the resonant cavity corresponding to the active region. The reflectivity of the high reflection film 19 is 85% -95%, and the reflectivity of the antireflection film 18 is 0.1% -0.5%, so that the permeability of one end face is enhanced, and photons emitted from the outside of the resonant cavity are converted into required laser.
Simulation was performed on the semiconductor laser device according to the above embodiment, and the simulation results shown in fig. 5 to 8 were obtained. It is apparent from fig. 5 that in the process of propagating the light field energy from the active segment to the passive segment, the transverse light field expands in the vertical and epitaxial directions, and the center of the light field mode moves downward. It can be seen from fig. 6 and 7 that when the light field is transmitted from the active region to the passive region, the light field energy gradually diffuses downward, so that in the vertical direction, the light spot size of the end surface mode field of the passive region is obviously increased relative to that of the end surface mode field of the active region, and the light spot of the end surface mode field of the passive region is closer to a circular light spot. It can be seen from fig. 8 that, after the passive-region double-layer waveguide structure is adopted, the divergence angle of the far field of the semiconductor laser is reduced from 35 ° of the single-layer waveguide to 21 °, and the far-field spot characteristic is greatly improved.
In a second aspect, according to an embodiment of the present invention, there is provided a method for manufacturing a semiconductor laser, including:
s1, epitaxially growing a first lower buffer layer 2, a grating layer 3, a first confinement layer 4, a lower waveguide layer 5, a multiple quantum well layer 6, an upper waveguide layer 7, and a second confinement layer 8 on the substrate 1 in this order.
S2, manufacturing a silicon dioxide mask by utilizing photoetching, covering the active region, and etching the first lower buffer layer 2, the grating layer 3, the first limiting layer 4, the lower waveguide layer 5, the multiple quantum well layer 6, the upper waveguide layer 7 and the second limiting layer 8 of the passive region by a dry etching and humidifying method.
S3, sequentially growing the second lower buffer layer 13, the first waveguide layer 14, the waveguide spacer layer 15, the second waveguide layer 16 and the first upper buffer layer 17 by secondary epitaxy in MOCVD.
S4, removing the silicon dioxide mask, and continuing to epitaxially grow the etch stop layer 9, the upper cladding layer 10, and the ohmic contact layer 11.
And S5, manufacturing a photoresist mask by photoetching to cover the ohmic contact layer 11 of the active region, and etching away the ohmic contact layer 11 of the inactive region by using a wet etching method.
S6, manufacturing a silicon dioxide protective layer by utilizing photoetching, exposing the ohmic contact layer 11 of the active region, covering other regions, manufacturing an electrode pattern mask by utilizing photoetching, manufacturing a Ti-Pt-Au electrode by utilizing evaporation, thickening the electrode by electroplating or chemical plating Au, and stripping metal in other regions to form the electrode layer 12.
The semiconductor laser prepared by the method integrates the first waveguide layer 14 and the second waveguide layer 16 of the passive region in a butt-joint growing mode, namely, a double-layer waveguide is integrated in the passive region. When the current injected into the active region is used for realizing light gain to realize lasing and outputting, the light passes through the double-layer waveguide of the passive region, so that when the light field is coupled to the lower-layer waveguide and reaches the output end face, the size of the light spot in the vertical direction is effectively increased, the near-field light spot is expanded, the far-field divergence angle is reduced, the light beam output quality is improved, the light beam adjustment is facilitated, the optical fiber coupling efficiency is improved, and the packaging coupling cost is reduced. Meanwhile, when the optical field is transmitted from the double-layer waveguide of the passive region to the single-layer waveguide of the active region (i.e., the upper waveguide layer 7, the lower waveguide layer 5 and the multiple quantum well layer 6), compared with the case of only using the single-layer waveguide, the loss is increased, so that the loss of the external feedback light is increased, and the anti-reflection capability of the laser is improved.
Furthermore, the etching depth of the dry etching and the wet etching is 1000-2000 nm.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (8)
1. A semiconductor laser is characterized by comprising a resonant cavity, wherein the resonant cavity comprises an active region and a passive region formed by secondary epitaxial butt-joint growth with the active region;
the active region comprises a substrate (1), and a first lower buffer layer (2), a grating layer (3), a first limiting layer (4), a lower waveguide layer (5), a multiple quantum well layer (6), an upper waveguide layer (7) and a second limiting layer (8) which are sequentially grown on the substrate (1) from bottom to top;
the passive region comprises a second lower buffer layer (13), a first waveguide layer (14), a waveguide spacing layer (15), a second waveguide layer (16) and a first upper buffer layer (17), which are epitaxially grown on the first lower buffer layer (2) from bottom to top in sequence;
the passive region and the active region are provided with an etching stop layer (9), a ridge structure is formed on the etching stop layer (9), and the ridge structure sequentially comprises an upper cladding layer (10), and an ohmic contact layer (11) and an electrode layer (12) which are grown on the upper cladding layer (10) and correspond to the active region from bottom to top;
an included angle is formed between a butt joint end face formed by pointing the active region and the passive region and a vertical plane on a first plane, the vertical direction is the height direction of the resonant cavity, and the first plane is a plane in which the length direction and the width direction of the resonant cavity are located; the included angle is 10-20 degrees.
2. The semiconductor laser as claimed in claim 1, wherein the active region has a length of 120 to 2000 μm and the passive region has a length of 20 to 100 μm.
3. A semiconductor laser according to claim 1, characterized in that the refractive indices of the first waveguide layer (14) and the second waveguide layer (16) are 3.4 to 3.5 and the refractive index of the waveguide spacer layer (15) is 3.18 to 3.24.
4. A semiconductor laser as claimed in claim 1, characterized in that the multiple quantum well layer (6) is an InGaAlAs multiple quantum well layer or an InGaAsP multiple quantum well layer, the first waveguide layer (14) and the second waveguide layer (16) are both InGaAsP waveguide layers, the material band gap of the first waveguide layer (14) and the second waveguide layer (16) being larger than the material band gap of the multiple quantum well layer (6).
5. A semiconductor laser as claimed in claim 1, characterized in that the first waveguide layer (14) and the second waveguide layer (16) each have a thickness of 150 to 400nm and the waveguide spacer layer (15) has a thickness of 200 to 800 nm.
6. A semiconductor laser according to claim 1, characterized in that the end facet of the resonant cavity corresponding to the passive region is provided with an anti-reflection film (18) and the end facet of the resonant cavity corresponding to the active region is provided with a high reflection film (19).
7. A method of fabricating a semiconductor laser, comprising:
s1, sequentially epitaxially growing a first lower buffer layer (2), a grating layer (3), a first limiting layer (4), a lower waveguide layer (5), a multi-quantum well layer (6), an upper waveguide layer (7) and a second limiting layer (8) on a substrate (1);
s2, manufacturing a silicon dioxide mask by utilizing photoetching, covering the active region, and etching the first lower buffer layer (2), the grating layer (3), the first limiting layer (4), the lower waveguide layer (5), the multiple quantum well layer (6), the upper waveguide layer (7) and the second limiting layer (8) of the passive region by a dry etching and humidifying method;
s3, sequentially growing a second lower buffer layer (13), a first waveguide layer (14), a waveguide spacing layer (15), a second waveguide layer (16) and a first upper buffer layer (17) in MOCVD by secondary epitaxy;
s4, after the silicon dioxide mask is removed, continuing to epitaxially grow the corrosion stop layer (9), the upper cladding layer (10) and the ohmic contact layer (11);
s5, manufacturing a photoresist mask through photoetching to cover the ohmic contact layer (11) of the active region, and etching away the ohmic contact layer (11) of the inactive region by using a wet etching method;
s6, a silicon dioxide protective layer is manufactured by photoetching, the ohmic contact layer (11) of the active region is exposed, other regions are covered, then an electrode pattern mask is manufactured by photoetching, a Ti-Pt-Au electrode is manufactured by evaporation, the electrode is thickened by electroplating or chemical plating Au, and the metal of other regions is stripped to form an electrode layer (12).
8. The method of claim 7, wherein the dry etching and the wet etching have an etching depth of 1000 to 2000 nm.
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| CN114256739B (en) * | 2021-12-15 | 2023-10-20 | 华中科技大学 | Distributed feedback laser for surface-emitting multi-order vortex beam |
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