CN219086444U - Semiconductor laser - Google Patents
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- CN219086444U CN219086444U CN202320041375.7U CN202320041375U CN219086444U CN 219086444 U CN219086444 U CN 219086444U CN 202320041375 U CN202320041375 U CN 202320041375U CN 219086444 U CN219086444 U CN 219086444U
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Abstract
The utility model discloses a semiconductor laser, which sequentially comprises the following steps: the laser comprises an N-face electrode, a substrate, a buffer layer, an N-type cladding layer, an N-type waveguide layer, an active region, a first P-type waveguide layer, an etching blocking layer, a current injection regulating layer, a second P-type waveguide, a P-type cladding layer, a cover layer and a P-face electrode, wherein the current injection regulating layer comprises at least one gain region and one non-gain region, the complete control of carriers can be realized by selectively etching the current injection regulating layer and secondary epitaxial growth, only the current of the gain region is injected into the active region, the non-gain region can form a P-N-P current blocking reverse bias layer, the effects of carrier diffusion, concentration, a thermal lens and the like can be well limited, the optical loss of a high-order side mode is increased, the gain of the high-order side mode is reduced, the number of the laser side modes is effectively reduced, the stress problem caused by mesa etching and the like in the traditional process step can be solved, and the laser output with high power, high beam quality and high brightness is realized.
Description
Technical Field
The utility model belongs to the technical field of semiconductor lasers, and relates to a semiconductor laser.
Background
The semiconductor laser has the advantages of wide wavelength range, small volume, high efficiency, low cost, long service life and the like, becomes a core light source in the information field from the advent of the semiconductor laser, and has very important application in a plurality of fields such as pumping, material processing, sensing, biomedical treatment, national defense and the like along with the improvement of the power of the semiconductor laser. Applications related to laser energy generally require lasers with a certain energy density, i.e. high power combined with high beam quality, to obtain high brightness. However, the semiconductor laser is limited by the structural characteristics of the semiconductor laser, and the problems of large divergence angle, poor beam quality and low brightness are faced, so that the semiconductor laser is limited to be directly applied.
The traditional wide-area semiconductor laser has the advantages of high power and high efficiency, but the lateral mode is easily affected by local gain and refractive index change, such as built-in refractive index generated by etching a table surface or a groove, lateral carrier leakage and concentration, thermal lens effect, longitudinal non-uniform effect, optical fiber effect, stress and the like, and works in a complex multi-side mode, the far field width is rapidly widened along with current increase, the light beam quality is very poor, and the output laser brightness is very low.
For these effects, a number of methods have been proposed to control the lateral modes of semiconductor lasers, such as the anti-thermal lens effect, mesa edge proton implantation, tapered waveguides, slanted waveguides, external cavity structures, lateral resonant anti-guiding structures, integrated mode filtering structures, etc., which can improve the lateral beam quality of semiconductor lasers to some extent, but often cause significant power and efficiency losses, and can affect device reliability and process yield. In addition, the current method generally optimizes the device structure only for a single effect, and is difficult to realize extremely high beam quality under the condition of maintaining high power output, and the brightness of the laser is limited.
In summary, how to realize a semiconductor laser with high power and high beam quality is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the foregoing, it is an object of the present application to overcome the above-mentioned drawbacks of the prior art and to provide a semiconductor laser for improving the power and beam quality of the semiconductor laser.
In order to achieve the above object, the present application provides the following technical solutions:
a semiconductor laser, comprising, in order from bottom to top: the semiconductor device comprises an N-face electrode, a substrate, a buffer layer, an N-type cladding layer, an N-type waveguide layer, an active region, a first P-type waveguide layer, an etching barrier layer, a current injection regulating layer, a second P-type waveguide layer, a P-type cladding layer, a cover layer and a P-face electrode, wherein the current injection regulating layer is made of an N-type high-doped material; the current injection regulation layer comprises at least one gain area and one non-gain area, and the non-gain area is positioned at the periphery of each gain area; the gain region is formed by etching away the current injection regulating layer corresponding to the current injection region.
Preferably, the shape of the gain region includes a circle, an ellipse, or a polygon.
Preferably, the size and spacing of each of said gain regions is different.
Preferably, the gain region is rectangular in shape.
Preferably, the width of the rectangular gain region decreases from the center of the current injection regulating layer to two sides.
Preferably, the material of the current injection regulating layer does not contain aluminum, and the refractive index of the current injection regulating layer is higher than that of the first P-type waveguide layer.
Preferably, the material of the etching barrier layer is different from the material of the current injection regulating layer, and the material of the etching barrier layer is a P-type doped material which does not contain aluminum.
Preferably, the thickness of the etching barrier layer is between 10 and 30nm, inclusive.
Preferably, the width of the current injection regulating layer is between 20 and 100nm, including the end point value.
Preferably, the thickness of the first P-type waveguide layer is greater than the thickness of the second P-type waveguide layer.
Preferably, the substrate is any one of GaAs, inP, gaSb and GaN.
A method of manufacturing a semiconductor laser, applied to a semiconductor laser as claimed in any one of the preceding claims, comprising:
sequentially growing a buffer layer, an N-type cladding layer, an N-type waveguide layer, an active region, a first P-type waveguide layer, an etching barrier layer and a current injection regulating layer on the upper surface of a substrate;
photoetching and etching are carried out on the surface of the current injection regulating layer, the current injection regulating layer of the gain region is completely etched, and the etching is stopped at the etching barrier layer;
after cleaning and preprocessing the surface of the wafer, placing the wafer into epitaxial equipment for secondary growth, and sequentially depositing a second P-type waveguide layer, a P-type cladding layer and a cover layer;
depositing an insulating layer on the surface of the cover layer, photoetching and etching the insulating layer of the central gain region, and opening an electrode window; depositing a P-surface electrode and an alloy; thinning and polishing the substrate, depositing an N-face electrode and an alloy on the lower surface of the substrate; cleaving the wafer into laser bars along the front and back cavity surfaces, evaporating an antireflection film on the front cavity surface and evaporating a high-reflection film on the back cavity surface; cleaving the bar into a single tube to obtain the semiconductor laser.
According to the technical scheme disclosed by the utility model, the current injection regulating layer is introduced into the semiconductor laser through secondary epitaxial growth, the p-n-p current blocking reverse bias layer is formed in the non-gain region, so that the lateral carrier expansion and aggregation can be effectively inhibited, meanwhile, the laser does not need to etch a mesa, the built-in refractive index difference and waveguide effect can be reduced, the lasing mode is reduced, and the beam quality of the laser is improved; in order to inhibit the thermal lens effect and the longitudinal hole burning effect, a plurality of gain areas are etched in the current injection regulating layer, the uniformity of carrier, temperature or light field distribution is improved by regulating and controlling current injection distribution, and the generation of a high-order side mode is inhibited; meanwhile, the current injection regulating layer has a high refractive index, the non-gain region is reserved with the current injection regulating layer, current cannot be effectively injected into the active region, and a coupling light field can leak into the high-doped cover layer, so that the high-order side mode gain can be reduced, the high-order side mode loss can be improved, the side mode resolution can be enhanced, the number of side lasing modes can be reduced on the premise of not losing power, and the side beam quality can be improved. The subsequent preparation process of the laser does not need etching a table top, can reduce the strain introduced by encapsulation and the like, improves the polarization degree of output laser light, and has great advantages in the aspect of beam combination application. In a word, the laser can realize laser output with high power, high beam quality and high brightness, and has good application prospect.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings may be obtained according to the provided drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic diagram of a semiconductor laser according to the present utility model;
fig. 2 is a top view of a current injection adjusting layer of a semiconductor laser according to an embodiment of the present utility model;
FIG. 3 is a top view of a current injection regulating layer of another semiconductor laser according to an embodiment of the present utility model;
FIG. 4 is a top view of a third semiconductor laser current injection regulation layer according to an embodiment of the present utility model;
fig. 5 is a flowchart of a method for manufacturing a semiconductor laser according to an embodiment of the present utility model.
Detailed Description
The following description of the technical solutions in the embodiments of the present application will be made clearly and completely with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
As shown in fig. 1, a semiconductor laser structure of the present utility model is shown in the following order, from bottom to top, an N-side electrode 1, a substrate 2, a buffer layer 3, an N-type cladding layer 4, an N-type waveguide layer 5, an active region 6, a first P-type waveguide layer 7, an etching barrier layer 8, a current injection control layer 9, a second P-type waveguide layer 10, a P-type cladding layer 11, a cap layer 12, an insulating layer 13, and a P-side electrode 14.
An N-side electrode 1 is deposited on the lower surface of the substrate 2, and it and a P-side electrode 14 provided as an electrode of a semiconductor laser for current injection.
The substrate 2 is an N-type highly doped group iii-v compound, which may be any one of GaAs, inP, gaSb and GaN, for supporting.
The buffer layer 3 is grown on the substrate 2 and is an N-type highly doped material, the same as the substrate 2 material, which is used to bury the defects of the substrate 2 itself.
An N-type cladding layer 4 is grown on the buffer layer 3 and is an N-type doped material with a refractive index lower than that of the N-type waveguide layer 5 to limit the expansion of the optical field toward the substrate.
An N-type waveguide layer 5 is grown on the N-type cladding layer 4, which has a band gap lower than that of the N-type cladding layer 4, but a refractive index higher than that of the N-type cladding layer 4, and which is undoped or N-type low doped.
The active region 6 is located above the N-type waveguide layer 5 and may be a single-layer or multi-layer quantum well, quantum dot, quantum wire, or other gain material, typically undoped.
A first P-type waveguide layer 7 is located over the active region 6, which is undoped or low P-type doped.
The etch stop layer 8 is located on the first P-type waveguide layer 7 and is of an aluminum-free material, different from the composition of the current injection regulating layer 9, for providing a large etch selectivity when etching the current injection regulating layer 9, and is doped with P-type material, having a thickness of between 10-30nm, inclusive.
The current injection regulating layer 9 is positioned above the etching barrier layer 8, is made of an aluminum-free material, is highly doped in an N type, and has a thickness of 20-100nm, including an endpoint value; the current injection regulating layer 9 comprises a gain region 15 and a non-gain region 16. The first epitaxial growth is carried out until the current injection regulating layer 9 is stopped, then photoetching and etching are carried out, the gain region 15 is the current injection regulating layer 9 corresponding to the current injection region and is completely etched, then the subsequent epitaxial layer is deposited by the second epitaxial growth, the region of the current injection regulating layer 9 which is not etched is a non-gain region 16, and the non-gain region 16 is restrained in carrier transmission due to the current injection regulating layer 9 (PNP reverse bias is formed), so that current injection regulation is realized.
The second P-type waveguide layer 10 is obtained by secondary epitaxial growth on the current injection regulating layer 9, has the same or different composition as the first P-type waveguide layer 7, and has a thickness lower than that of the first P-type waveguide layer 7, and adopts P-type doping.
The P-type cladding layer 11 is grown on the second P-type waveguide layer 10, has a band gap higher than that of the first P-type waveguide layer 7 and the second P-type waveguide layer 10, but has a refractive index lower than that of the first P-type waveguide layer 7 and the second P-type waveguide layer 10, and is doped P-type.
The cap layer 12 is located over the P-type cladding layer 11 and is heavily doped to facilitate ohmic contact.
An insulating layer 13 is over the cap layer 12 for limiting contact of the P-side electrode 14 outside the gain region with the cap layer 12.
The P-side electrode 14 is used to form an ohmic contact with the cap layer 12 for current injection.
According to the semiconductor laser provided by the embodiment of the utility model, the component graded layer can be introduced between the layers so as to reduce the barrier resistance.
The current injection regulating layer 9 of the semiconductor laser is provided with a gain region 15 and a non-gain region 16, wherein the gain region 15 is specifically formed by etching the second P-type waveguide layer 10 which is grown in a secondary epitaxy after the current injection region corresponds to the current injection regulating layer 9, and the non-gain region 16 is formed by the current injection regulating layer 9 which is not etched outside the gain region 15. The gain region 15 of the semiconductor laser, since it is P-doped with the underlying material (etch stop layer 8), current can be injected down into the active region 6; the non-gain region 16 forms a PNP reverse bias with the upper second P-type waveguide layer 10 and the lower etching barrier layer 8 due to the presence of the N-type highly doped current injection regulating layer 9, and current cannot be injected into the active region 6. When the semiconductor laser is energized, only the gain region 15 passes a current, and an optical gain lasing can be obtained. Therefore, the current injection regulating layer 9 can effectively regulate carrier injection distribution, and the current injection regulating layer 9 is very close to the active region 6, so that lateral leakage and aggregation effects of carriers can be inhibited, and the gain of a high-order side mode is reduced, thereby enhancing the beam quality of the laser.
In addition, the current injection regulating layer 9 of the semiconductor laser of the present utility model includes a plurality of gain regions 15 and a non-gain region 16, wherein the gain regions 15 are specifically formed by etching the second P-type waveguide layer 10 which is epitaxially grown for the second time after the current injection regulating layer 9 corresponding to the current injection region is etched, and two adjacent gain regions 15 are isolated by the non-etched current injection regulating layer 9 (non-gain region). The width of these gain regions 15 may be different, decreasing from the center to both sides, as may the width of the current injection regulating layer 9 remaining between adjacent gain regions 15. Thus, the non-gain region 16 may be disposed at a location of the semiconductor laser other than at the fundamental side-mode optical field peak, while at the same time being at the higher-order side-mode optical field peak of the semiconductor laser. When the semiconductor laser is energized, only the gain regions 15 may be energized, while the non-gain regions 16 may not be energized, absorbing light and increasing optical losses. The gain regions 15 electrified can obtain optical gain to generate laser, by regulating carrier injection distribution, carrier leakage, concentration and thermal lens effect can be restrained, loss of a high-order side mode is improved, gain of the high-order side mode is reduced, accordingly mode gain loss difference between a base side mode and the high-order side mode is enhanced, gain of the base side mode is increased, loss of the base side mode is reduced, strong mode resolution is obtained, the number of lasing side modes is effectively reduced, laser output with low lateral divergence angle is obtained, high-power and high-beam quality laser output is achieved, and brightness of a semiconductor laser is greatly improved.
In addition, the current injection regulating layer 9 of the semiconductor laser of the present utility model has a plurality of gain regions 15 distributed two-dimensionally, and the size and interval of these gain regions 15 may be different. By adjusting the distribution of the gain region 15, the injection current distribution can be regulated and controlled, the effects of carrier diffusion, aggregation, thermal lens, space hole burning or non-uniform distribution of longitudinal carriers and the like are suppressed, and the lasing of the high-order side mode is suppressed, so that the beam quality and brightness of the laser are improved.
In addition, the current injection regulating layer 9 of the semiconductor laser has a refractive index higher than that of the first P-type waveguide layer 7, and the non-gain region 16 not only inhibits current injection, but also enhances light leakage loss due to the tunneling effect of the high refractive index layer, thereby increasing the light field loss of the region. Therefore, the laser can regulate and control the gain and the optical loss of the optical mode simultaneously, and realize high lateral mode resolution, thereby obtaining high output laser brightness.
According to the technical scheme disclosed by the utility model, the controllable gain region 15 is formed through the current injection regulating and controlling layer 9, so that selective power-on of each region is realized when the semiconductor laser is electrified, the non-gain region 16 faces low gain and high loss, so that the optical loss of a high-order side mode is increased, the gain of a base side mode is reduced, the loss of the base side mode is increased, namely, the mode gain loss difference between the base side mode and the high-order side mode is increased, the number of lasing side modes is effectively reduced, and the low lateral divergence angle is obtained, so that the light beam quality, the power and the brightness of the semiconductor laser are improved.
Referring to fig. 2, a top view of a semiconductor laser current injection regulation layer according to an embodiment of the present utility model is shown. The cavity length of the laser is L, the gain stripe width is W, the luminous point interval is D, and the current injection regulating layer 9 comprises: a first rectangular gain section 151, a second rectangular gain section 152, a third rectangular gain section 153, a fourth rectangular gain section 154, a fifth rectangular gain section 155, a sixth rectangular gain section 156, a seventh rectangular gain section 157, and a first non-gain section 116, the first non-gain section 116 being located around all rectangular gain sections.
The first non-gain region 116 cannot be injected into the active region 6 due to the presence of the N-doped current injection regulation layer; the first rectangular gain region 151, the second rectangular gain region 152, the third rectangular gain region 153, the fourth rectangular gain region 154, the fifth rectangular gain region 155, the sixth rectangular gain region 156 and the seventh rectangular gain region 157 are etched to remove the current injection regulating layer 9 corresponding to the current injection region, so that current can be injected into the active region 6, the current injection regulating layer 9 is reserved in the front cavity surface and the rear cavity surface of the laser, and the carrier density of the cavity surface in actual operation is reduced, so that the reliability of the cavity surface is improved.
In the semiconductor laser provided by the embodiment of the utility model, the current injection regulating layer 9 consists of 7 rectangular gain areas and one non-gain area 116, the widths of the 7 rectangular gain areas are different in the semiconductor laser, and the size of each rectangular gain area is changed in a chirp manner so as to effectively inhibit a resonance mode, thereby realizing stable single-beam output and improving the quality of laser output by the semiconductor laser. In addition, by adjusting the width of the 7 rectangular gain regions, the peak position of the light field of the higher-order side mode can be kept in the non-gain region 116 as much as possible, so as to reduce the gain of the higher-order side mode and increase the loss of the higher-order side mode, thereby enhancing the mode resolution, improving the quality of the laser output by the semiconductor laser and improving the brightness of the laser output by the semiconductor laser.
Referring to fig. 3, a top view of another semiconductor laser current injection regulation layer provided by an embodiment of the present utility model is shown. In another semiconductor laser provided in the embodiment of the present utility model, the current injection adjusting layer 9 includes: n first gain granules 21n, n second gain granules 22n, and one non-gain zone 216. The first gain block 21n includes n eighth rectangular gain sections 215; the second gain section 22n includes n-1 ninth rectangular gain sections 225. The eighth rectangular gain section 215 is identical to the ninth rectangular gain section 225.
Referring to fig. 4, a top view of a third semiconductor laser current injection regulation layer provided by an embodiment of the present utility model is shown. The third semiconductor laser provided in the embodiment of the present utility model includes n third gain area groups 31n, n fourth gain area groups 31n, and a third non-gain area 316.
The third gain region group 31N includes N nth rectangular gain regions 315N; the fourth gain section 32N includes N-1 nth rectangular gain sections 325N.
The size and interval of each N-th rectangular gain region 315N and N-th rectangular gain region 325N are different, and the size changes with chirp, so that the carrier diffusion effect and the space hole burning effect can be restrained, the more stable temperature, carrier and light field distribution can be obtained on the front cavity surface, the occurrence of high-order modes under high power current can be restrained, and the beam quality and brightness of laser can be improved.
The embodiment of the application also provides a semiconductor laser preparation method, which is applied to any one of the semiconductor lasers, referring to fig. 5, which shows a flowchart of the semiconductor laser preparation method provided by the embodiment of the application, and may include:
s1: and sequentially growing a buffer layer, an N-type cladding layer, an N-type waveguide layer, an active region, a first P-type waveguide layer, an etching barrier layer and a current injection regulating layer on the upper surface of the substrate.
A buffer layer, an N-type cladding layer, an N-type waveguide layer, an active region, a first P-type waveguide layer, an etch stop layer, and a current injection regulation layer may be sequentially grown on the upper surface of the substrate using an MOCVD (Metal-organic Chemical Vapor Deposition, metal organic chemical vapor deposition) apparatus or an MBE (Molecular beam epitaxy ) apparatus to form a first epitaxial structure.
For the GaAs-based semiconductor laser, 20nm thick P-type doped GaInP can be used as an etching barrier layer, and 50nm thick N-type high doping is adopted>2E18 cm -3 ) As a current injection regulating layer.
S2: photoetching and etching are carried out on the surface of the current injection regulating layer, the current injection regulating layer corresponding to the gain region is completely etched, and the etching is stopped at the etching barrier layer.
And photoetching the upper surface of the first epitaxial structure (namely the surface of the current injection regulating layer), preparing an etching mask, defining a gain region, a non-gain region and an overlay mark, then etching the current injection regulating layer by taking photoresist as the mask, and transferring a mask pattern into the current injection regulating layer.
After the epitaxial layer is obtained, the uppermost current injection regulating layer can be etched by utilizing photoetching, wet method or dry method, and the current injection regulating layer with the whole thickness is etched, and the etching is stopped at the etching barrier layer due to the fact that the etching barrier layer has a large etching selectivity.
For example, after one epitaxial growth is completed, the wafer is grown on an epitaxial waferPerforming surface photoetching, spin coating photoresist, exposing and developing to obtain a gain region pattern; by H 3 PO 4 :H 2 O 2 :H 2 The exposed etching current blocking layer is easy to etch by O=1:1:15, and the etching depth is greater than 50nm, so that the current injection regulating layer is ensured to be completely etched, and the etching is stopped at the GaInP layer due to the fact that the GaInP has a large etching selection ratio relative to the GaAs; the gain area and the non-gain area of the laser can be defined on the surface of the first epitaxial structure through photoetching and etching; the photoresist mask is removed in preparation for a second epitaxy.
S3: and after cleaning and pretreatment of the surface of the wafer, sequentially growing a second P-type waveguide layer, a P-type cladding layer and a cover layer by secondary epitaxy.
And after cleaning and preprocessing the surface of the wafer, carrying out secondary epitaxy on the first epitaxy structure, and sequentially growing a second P-type waveguide layer, a P-type cladding layer and a cover layer to form a second epitaxy structure.
Before secondary epitaxial growth, the sample is subjected to ultraviolet ozone plasma cleaning and acid rinsing to remove surface polymers, particles and lattice damage, then the sample is immediately sent into an MOCVD or MBE reaction chamber to carry out secondary epitaxy, a first grown second P-type waveguide layer buries an etched gain region in a current injection regulation layer, and then the P-type cladding layer and the GaAs cover layer are continuously grown.
S4: depositing an insulating layer on the surface of the cover layer, and opening an electrode window; depositing a P-surface electrode and an alloy; thinning and polishing a substrate, depositing an N-face electrode and an alloy on the lower surface of the substrate; cleaving into bars, plating a cavity mask, and cleaving into single-tube chips to obtain the semiconductor laser.
After the secondary epitaxial growth is finished, depositing an insulating layer on the upper surface of the secondary epitaxial structure, photoetching and etching the insulating layer, and opening an electrode window; depositing a P-surface electrode and an alloy; thinning and polishing the substrate, depositing an N-face electrode and an alloy on the lower surface of the substrate; and cleaving the wafer into bars along the front and back cavity surface directions, plating a cavity surface film, and then cleaving the bars into single-tube chips to obtain the semiconductor laser.
After the secondary epitaxial growth is finished, adopting equal stepsIon enhanced chemical vapor deposition (PECVD) equipment deposits 100-300nm thick electrically insulating layer (SiO) on the surface of the cap layer 2 Or SiNx), photoetching and etching an electric insulation layer of the central gain region, and opening an electrode window; then depositing a P-surface electrode and an alloy on the upper surface to form a P-type metal contact electrode; thinning and polishing the bottom of the substrate to a thickness of 100-150 mu m, and then depositing an N-face electrode and an alloy on the bottom surface of the substrate to form an N-type metal contact electrode; cleaving the laser into bars along the front and back cavity surfaces, and evaporating an anti-reflection film on the front cavity surface and an evaporation high-reflection film on the back cavity surface; and cleaving the coated bars into single-tube chips to obtain the semiconductor laser.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements is inherent to. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. In addition, the parts of the above technical solutions provided in the embodiments of the present application, which are consistent with the implementation principles of the corresponding technical solutions in the prior art, are not described in detail, so that redundant descriptions are avoided.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. A semiconductor laser, comprising, in order from bottom to top: the semiconductor device comprises an N-face electrode, a substrate, a buffer layer, an N-type cladding layer, an N-type waveguide layer, an active region, a first P-type waveguide layer, an etching barrier layer, a current injection regulating layer, a second P-type waveguide layer, a P-type cladding layer, a cover layer and a P-face electrode, wherein the current injection regulating layer is made of an N-type high-doped material; the current injection regulation layer comprises at least one gain area and one non-gain area, and the non-gain area is positioned at the periphery of each gain area; the gain region is formed by etching away the current injection regulating layer corresponding to the current injection region.
2. A semiconductor laser as claimed in claim 1 wherein the shape of the gain region comprises a circle, ellipse or polygon.
3. A semiconductor laser as claimed in claim 1, wherein the size and spacing of each of said gain regions is different.
4. A semiconductor laser as claimed in claim 2 wherein the gain region is rectangular in shape.
5. A semiconductor laser as claimed in claim 4 wherein the width of the rectangular gain region decreases from the center of the current injection accommodating layer to both sides.
6. The semiconductor laser of claim 1, wherein the material of the current injection tuning layer is free of aluminum components, and wherein the refractive index of the current injection tuning layer is higher than the refractive index of the first P-type waveguide layer.
7. The semiconductor laser of claim 1, wherein the material of the etch stop layer is different from the material of the current injection regulation layer, and the material of the etch stop layer is a P-type doped material that does not contain aluminum.
8. The semiconductor laser of claim 1, wherein the etch stop layer has a thickness between 10-30nm, inclusive.
9. The semiconductor laser of claim 1, wherein the current injection modulating layer has a width between 20-100nm, inclusive.
10. The semiconductor laser of claim 1, wherein a thickness of the first P-type waveguide layer is greater than a thickness of the second P-type waveguide layer.
11. The semiconductor laser according to claim 1, wherein the substrate is any one of GaAs, inP, gaSb and GaN.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116505370A (en) * | 2023-06-20 | 2023-07-28 | 深圳市柠檬光子科技有限公司 | Edge-emitting laser and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116505370A (en) * | 2023-06-20 | 2023-07-28 | 深圳市柠檬光子科技有限公司 | Edge-emitting laser and method of manufacturing the same |
| CN116505370B (en) * | 2023-06-20 | 2023-10-13 | 深圳市柠檬光子科技有限公司 | Edge-emitting laser and method of manufacturing the same |
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