CN101071935A - Method for preparing buried structure AlInGaAs distributed feedback laser - Google Patents
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- CN101071935A CN101071935A CN 200610078213 CN200610078213A CN101071935A CN 101071935 A CN101071935 A CN 101071935A CN 200610078213 CN200610078213 CN 200610078213 CN 200610078213 A CN200610078213 A CN 200610078213A CN 101071935 A CN101071935 A CN 101071935A
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Abstract
The invention is a method for making buried-structure AlInGaAs distribution feedback laser, characterized in that it comprises the steps of: (1) making absorption type gain coupling grating on a substrate in large area; (2) using plasma chemical gas phase deposition technique to grow medium membrane on epitaxial slice and adopting photoetching technique to make medium mask pattern; (3) using strip selective epitaxial growth technique to in turn grow lower limit layer, active region, upper limit layer and protective layer to form a trapeziform structure; (4) successively growing contact layer on the epitaxial slice; (5) growing an insulating layer on the epitaxial slice in large area and making electrode windows on the active region; (6) making p-side electrode on the epitaxial slice; (7) thinning the substrate back of the epitaxial slice to make n-side electrode; and (8) cleaving the epitaxial slice to make a tube core.
Description
Technical field
The invention belongs to the photoelectron technology field, relate to a kind of new structure and manufacture method with buried structure aluminium indium gallium arsenic (AlInGaAs) distribution of material feedback laser of electric current volitional check function.This grows width automatically on the substrate of having made the absorption type gain coupling grating be 1～3 micron aluminium indium gallium arsenic strain compensation Multiple Quantum Well fillet platform shape active area; and this table top is protected with indium phosphide (InP); need not through traditional handicrafts such as over etchings, can effectively solve aluminium (Al) the oxidation difficult problem that this aluminium indium gallium arsenic material with better temperature performance and modulating characteristic exists.Another key point of the present invention is to have adopted a kind of special method epitaxial growth indium phosphide and indium gallium arsenic (InGaAs) contact layer, can form a kind of special buried structure, not only can obtain good facular model, but also have electric current volitional check function.The present invention is to making low threshold current, high efficiency and do not have the meaning that refrigeration high speed directly modulated lasers has particular importance cheaply, and the photon of aluminium indium gallium arsenic (AlInGaAs) material is integrated with reference value.
Background technology
When the side direction guide structure of design and making semiconductor laser, have two basic problems to need to consider: the one, effectively limit the lateral expansion of electric current and the sideways diffusion of charge carrier and reduce threshold current and improve the electric current injection efficiency to reach, the secondth, have good facular model to reach the coupling efficiency of raising device and optical fiber.The side direction guide structure of semiconductor laser mainly is summed up as index guide structure mechanism and gain guided mechanism.At present, the side direction guide structure that semiconductor laser generally adopts mainly contains three types: (1) ridge waveguide structure (Ridge Waveguide, RW) laser (reference: 1. Photonics Tech.Lett., 2001, Vol.13,773-775) and 2. Photonics Tech.Lett., 2004, Vol.22,159-165), this waveguide structure fabrication is comparatively simple, but this structure is not strong in the restriction of lateral to electric current, be unfavorable for reducing threshold current, the poor quality of the facular model of this waveguiding structure is unfavorable for improving power output and coupling efficiency simultaneously.(2) bury ridge bar structure (BuriedRidge Stripe, BRS) laser (reference: 1. Electronics Lett., 1994, Vol.30,1146-1147 and 2. PhotonicsTech.Lett., 2005, Vol.17,1369-1371), the making of this structure is than ridge waveguide structure complexity, advantage has been to improve the symmetry of facular model and can have suppressed the appearance of higher order mode, and ion injects the effect that the current barrier region that forms can play the restriction electric current simultaneously.(3) buried heterostructure (Buried Heterostructure, BH) laser (reference: 1. PhotonicsTech.Lett., 1999,949-951) and 2. Vol.11, Photonics Tech.Lett., 2005, Vol.17,276-278, this waveguiding structure has very strong restriction to electric current, have facular model preferably simultaneously, but the manufacture craft more complicated of this structure.People wish to design a kind of side direction guide structure always, and not only its manufacture craft requires simply, and require that electric current is had stronger restriction, require the facular model of waveguiding structure that good symmetry and stability are arranged simultaneously.
Modulating characteristic and temperature performance are two important index of semiconductor laser.Adopt bigger aluminium indium gallium arsenic (AlInGaAs) material of conduction band well depth as the Multiple Quantum Well active area obviously improve device the at a high speed straight tonality of no refrigeration can (reference: J.Quantum Electron., Vol.30,511-523).But because alumina-bearing material when the growth of etching and secondary epitaxy oxidation takes place easily, so when adopting aluminium indium gallium arsenic material, adopt ridge waveguide structure mostly, in order to avoid cause the oxidation that contains aluminium (Al) active area as active area.If make buried structure aluminium indium gallium arsenic (AlInGaAs) Multiple Quantum Well active area laser, then need to take the original position lithographic technique (reference: 1. Journal of Crystal Growth of complex process, 2003, Vol.248,426-430) or In-Situ Cleaning (reference: Electronics Lett., 2004, Vol.40,669-671) technology overcomes the problem of oxidation of alumina-bearing material.Therefore, need find a kind ofly can form buried structure, can prevent the oxidation of alumina-bearing material simultaneously again, and the simple method of technology.
Summary of the invention
The objective of the invention is to, a kind of manufacture method of buried structure AlInGaAs distributed feedback laser is provided, the problem of oxidation that has not only solved aluminium indium gallium arsenic material of this structure, and have electric current volitional check function, technology is simple simultaneously.
The manufacture method of a kind of buried structure AlInGaAs distributed feedback laser of the present invention is characterized in that, comprises the steps:
(1) large-area manufacturing absorption type gain coupling grating on substrate;
(2) utilize plasma chemical vapor deposition technique, somatomedin film on epitaxial wafer adopts lithography corrosion technology, makes the dielectric mask figure;
(3) utilize fillet selective epitaxy growing technology, grow successively lower limit layer, active area, upper limiting layer and protective layer form trapezoidal structure;
(4) contact layer of on epitaxial wafer, then growing;
(5) large area deposition one layer insulating on epitaxial wafer, and above trapezoidal active area, leave electrode window through ray;
(6) on epitaxial wafer, make p face electrode;
(7), make n face electrode to the substrate back attenuate of epitaxial wafer;
(8) the cleavage epitaxial wafer is made tube core.
Wherein the absorption type gain coupling grating is that growing n-type InGaAsP absorbed layer and n type indium phosphide resilient coating form on the substrate of having scribed periodic optical grating.
Wherein the width of the growth window of dielectric mask figure is about 2 microns, and the width of mask is near 15 microns, and the material of mask is oxides such as silicon dioxide or silicon nitride.
Wherein lower limit layer is a n type aluminium indium gallium arsenic material, and its band gap size is reduced to the numerical value of band gap at the base of active area always from the band gap numerical value of indium phosphide.
Wherein active area is the aluminium indium gallium arsenic strain compensation Multiple Quantum Well of intrinsic, and the trap number is 6～10.
Wherein upper limiting layer is a p type aluminium indium gallium arsenic material, and its band gap size increases to the band gap numerical value of indium phosphide always from the numerical value of the band gap at the base of active area.
Wherein protective layer is a p type indium phosphide, and trapezoidal active area is covered.
Wherein contact layer is made up of p type phosphorization phosphide indium layer and p type ingaas layer.
Wherein the material of insulating barrier is oxides such as silicon dioxide or silicon nitride, and this insulating barrier will link to each other with mask.
Wherein electrode window through ray be positioned at trapezoidal active area directly over, the insulating barrier etching is formed.
Description of drawings
In order to further specify content of the present invention, below in conjunction with drawings and Examples the present invention is described in detail, wherein:
Fig. 1 is a schematic diagram of making the absorption type gain coupling grating on substrate;
Fig. 2 is a schematic diagram of having made dielectric mask on epitaxial wafer;
Fig. 3 is at the schematic diagram behind the active area of having grown on the epitaxial wafer;
Fig. 4 is at the schematic diagram behind the contact layer of having grown on the epitaxial wafer
Fig. 5 is depositing the schematic diagram behind the insulating barrier on the epitaxial wafer;
Fig. 6 is the schematic diagram after leaving electrode window through ray on the epitaxial wafer;
Fig. 7 has made the device architecture schematic diagram behind the metal electrode.
Embodiment
See also Fig. 1 to Fig. 7, the manufacture method of a kind of buried structure AlInGaAs distributed feedback laser of the present invention is characterized in that, comprises the steps:
(1) large-area manufacturing absorption type gain coupling grating 2 (consulting Fig. 1) on substrate 1, this absorption type gain coupling grating 2 are that growing n-type InGaAsP absorbed layer and n type indium phosphide resilient coating form on the substrate 1 of having scribed periodic optical grating;
(2) utilize plasma chemical vapor deposition technique, somatomedin film on epitaxial wafer, adopt lithography corrosion technology, make dielectric mask figure 3 (consulting Fig. 2), about 2 microns of the width of the growth window of this dielectric mask figure 3, the width of mask is near 15 microns, and the material of mask is oxides such as silicon dioxide or silicon nitride;
(3) utilize fillet selective epitaxy growing technology, grow successively lower limit layer 4, active area 5, upper limiting layer 6 and protective layer 7, form trapezoidal structure (consulting Fig. 3), this lower limit layer 4 is a n type aluminium indium gallium arsenic material, and its band gap size is reduced to the numerical value of band gap at the base of active area always from the band gap numerical value of indium phosphide; Wherein active area 5 is the aluminium indium gallium arsenic strain compensation Multiple Quantum Well of intrinsic, and the trap number is 6～10; Wherein upper limiting layer 6 is a p type aluminium indium gallium arsenic material, and its band gap size increases to the band gap numerical value of indium phosphide always from the numerical value of the band gap at the base of active area; Wherein protective layer 7 is a p type indium phosphide, and trapezoidal active area is covered;
(4) contact layer 8 (consulting Fig. 4) of on epitaxial wafer, then growing, this contact layer 8 is made up of p type phosphorization phosphide indium layer and p type ingaas layer;
(5) large area deposition one layer insulating 9 (consulting Fig. 5) on epitaxial wafer, and above trapezoidal active area 5, leave electrode window through ray 10 (consulting Fig. 6), the material of this insulating barrier 9 is oxides such as silicon dioxide or silicon nitride, this insulating barrier 9 will link to each other with mask 3, this electrode window through ray 10 be positioned at trapezoidal active area directly over, insulating barrier 9 etchings are formed;
(6) on epitaxial wafer, make p face electrode 11 (consulting Fig. 7);
(7), make n face electrode to substrate 1 thinning back side of epitaxial wafer;
(8) the cleavage epitaxial wafer is made tube core.
Below please consult Fig. 1 to Fig. 7 again, the manufacture method of a kind of buried structure AlInGaAs distributed feedback laser of the present invention be described in detail as follows:
(1) as shown in Figure 1, preparation absorption type gain coupling grating 2 on n type indium phosphide (InP) substrate 1.The fabrication direction of grating is in crystal orientation, substrate 1 (100) face upper edge [110].In order effectively to play feedback effect, must make the feedback wavelength of grating near necessary wavelength (in the example being 1.31 microns), this numerical value is also approaching with the material gain peak wavelength of designed quantum well active area.Just can calculate the cycle of the grating that will prepare according to the material gain peak wavelength of the effective refractive index of Multiple Quantum Well active area and designed active area.Include grating the distributed feedback laser maximum be a little to have good single-mode behavior.InGaAsP (InGaAsP) absorbed layer is to adopt metal organic chemical vapor deposition technology (MOCVD) growth.The band gap wavelength of InGaAsP (InGaAsP) layer should be greater than the quantum well band gap wavelength, and band gap wavelength is 1.4 microns in this example, has the certain absorption effect, has changed traditional transparent grating into gain coupled type distributed feedback grating.Absorption type gain coupling distributed feedback laser and general index-coupled distributed feedback laser Comparatively speaking, have plurality of advantages: manufacture craft is simple, need not the coating anti reflection film; The monofilm selectivity is not easy to be subjected to the influence of end face reflectivity, can improve rate of finished products; The noise that external light reflection causes is low; Has the ability that the monofilm ultrashort light pulse takes place; Frequency bandspread under the High Speed Modulation is very little.Gain coupled type distributed feedback laser has and important effect in fields such as photo measure, optical storage, optical communication and optical information processing.
(2) utilizing plasma chemical vapor deposition technique (PECVD), is being the silicon dioxide (SiO of 100～150 nanometers through growth one layer thickness on the epitaxial wafer of step 1
2) deielectric-coating.Silicon dioxide (SiO
2) deielectric-coating mainly acts on is to play masking action when carrying out fillet selective epitaxy growth, also can be silicon oxynitride (SiON) or nitrogen China silicon (SiN).The thickness of this layer dielectric can not be too big, in order to avoid have influence on the fillet selective epitaxy growth quality of active area.
(3) as shown in Figure 2, the silicon dioxide (SiO of growth in step 2
2) on the deielectric-coating, adopt traditional lithography corrosion technology, make the fillet selective epitaxy needed silicon dioxide (SiO that grows
2) mask 3,1 is n type indium phosphide (InP) substrate, 2 is the absorption type gain coupling grating.About 1～3 micron of fillet growth window width (Wo), the silicon dioxide (SiO of both sides symmetry
2) mask strips width (Wm) is 10～20 microns.When photoetching corrosion, must strictly control gluing, baking, exposure, developing process, obtain edge smoothing photoresist figure clearly.Because compound semiconductor is different with the mechanism of nucleation on the deielectric-coating at substrate, compound semiconductor can only not grown on deielectric-coating in growth on the substrate, so can utilize above mask graph to realize selecting region growing.In addition, the plane at this block graphics place is (100) face of substrate, silicon dioxide (SiO
2) the dielectric mask fillet is along [110] crystal orientation, accurately control the mask direction and help when the fillet selective epitaxy is grown, obtaining smooth smooth fillet active area.Fillet selects the needed mask graph of growth to be different from traditional selection needed mask graph of growing.Traditional selection is grown the width of needed mask graph growth window much larger than 5 microns, generally near 15 microns, the width of the compound semiconductor waveguide that epitaxial growth obtains is also near 15 microns, the waveguide of width is not suitable for being used for directly using as waveguide like this, also needs to adopt technologies such as photoetching that the width of waveguide is further reduced.The width of the growth window of the mask graph of fillet selection growth is generally less than 5 microns, and near 1～3 micron, the compound semiconductor waveguide that growth obtains on the zone of such width can directly be used for making photoelectric device and integrated device thereof mostly.
(4) as shown in Figure 3, adopt metal organic chemical vapor deposition technology (MOCVD), making silicon dioxide (SiO
2) on the epitaxial wafer of deielectric-coating mask graph, aluminium indium gallium arsenic (AlInGaAs) the Multiple Quantum Well active area 5 of limiting layer 4, strain compensation, p type aluminium indium arsenic (AlInAs) are gone up limiting layer 6 and p type indium phosphide (InP) protective layer 7 respectively to growing n-type aluminium indium arsenic (AlInAs) respectively down successively.Wherein the active area trap number of strain compensation is 6～10, and aluminium indium gallium arsenic (AlInGaAs) trap band gap wavelength is 1.31 microns, and trap is thick to be 5 nanometers, the compressive strain amount is 1%, it is 1.0 microns that aluminium indium gallium arsenic (AlInGaAs) is built band gap wavelength, and building thick is 10 nanometers, and the tensile strain amount is 0.4%.Because the conduction band well depth of aluminium indium gallium arsenic material (Δ Ec=0.72 Δ Eg) is bigger than aluminium indium gallium arsenic conduction band well depth (Δ Ec=0.4 Δ Eg), so adopt aluminium indium gallium arsenic material can improve the modulation bandwidth and the no refrigeration performance of device as the Multiple Quantum Well active area materials.Because it is 1～3 micron that fillet is selected the growth window width of the mask graph of growth, so the width of the waveguide that growth obtains is also near 1～3 micron, the facular model that can guarantee device is a fundamental transverse mode, can be directly use as the active area of device, need not photoetching, these characteristics have just in time avoided aluminium indium gallium arsenic material that the problem of oxidation takes place in corrosion process easily.The growth of p type indium phosphide (InP) protective layer 7 is for active area covers, and effectively prevents to contain the oxidation of aluminum active district in subsequent technique.
(5) shown in Fig. 4, growing p-type indium phosphide (InP) and p type indium gallium arsenic (InGaAs) contact layer 8 on the process epitaxial wafer of step 4.The main effect of p type indium phosphide (InP) is the light restriction factor that improves active area, improves the facular model of laser, helps improving coupling efficiency.The main effect of p type indium gallium arsenic (IGaAs) is to reduce contact resistance, and charge carrier effectively is injected with in the source region.
(6) as shown in Figure 5, adopt traditional chemical gas phase deposition technology (CVD), growthing silica (SiO on epitaxial wafer
2) insulating barrier 9.This one deck silicon dioxide mainly plays electric buffer action, is different from the effect that silicon dioxide played in the step 3, and thickness is than the silicon dioxide (SiO in the step 3
2) thickness is big.This one deck silicon dioxide can reduce parasitic capacitance simultaneously, plays the effect that improves modulation bandwidth.
(7) as shown in Figure 6, adopt Alignment Method at silicon dioxide (SiO
2) leave electrode window through ray 10 on the insulating barrier.This window is the injection channel of electric current.As can be seen from Figure 6, the laser of this structure has electric current volitional check function.This electric current restriction is not to rely on buried heterostructure commonly used or ion to inject realizing than the restriction of big resistance to electric current of formation, but utilizes this special structure to realize.Because all there is silicon dioxide (SiO on the bottom position both sides at active area
2) insulating barrier, so the electric current that injects from current channel must pass through active area, thereby realized the volitional check of electric current.
(8) as shown in Figure 7, sputtered titanium/platinum on epitaxial wafer/gold (Ti/Pt/Au) is made p face electrode 11.Also can be made into traditional high-frequency electrode as required.To the epitaxial wafer thinning back side, evaporated gold/germanium/nickel (Au/Ge/Ni) n face electrode.
The cleavage epitaxial wafer is made tube core.
It is 1～3 micron aluminium indium gallium arsenic (AlInGaAs) Multiple Quantum Well fillet platform shape active area part that key point of the present invention is to adopt the wide selective epitaxy growing technology of fillet to generate width automatically, and under the situation of the mask that does not remove the fillet growth, directly alternating temperature growing p-type indium phosphide (InP) and P type indium gallium arsenic (InGaAs) contact layer form the laser buried structure with electric current volitional check function.This key measure not only greatly reduces the complexity and the cost of device making technics, and can improve the performance and the rate of finished products of device.To describe summary of the invention and characteristics thereof in detail below.
Distributed feedback grating adopts the absorption type gain coupling grating of directly making on substrate.The employing of this grating has plurality of advantages: do not need to plate reflectance coating, the single mode selectivity is not subjected to the influence of end face reflectivity, and the noise that external reflection light causes is low; Frequency bandspread is very little during the high speed dynamic modulation, has simplified manufacture craft, has improved rate of finished products.
Adopt metal organic chemical vapor deposition technology (MOCVD); select on the epitaxial wafer of the required dielectric mask figure of growth having made fillet, aluminium indium gallium arsenic (AlInGaAs) the Multiple Quantum Well active area of limiting layer, strain compensation, intrinsic aluminium indium arsenic (AlInAs) are gone up limiting layer and intrinsic indium phosphide (InP) protective layer respectively respectively down at higher temperature conditions growing n-type indium phosphide successively (InP) resilient coating, intrinsic aluminium indium arsenic (AlInAs).Automatically form fillet platform shape active area part in this way, and need not etching technics, further simplified manufacture craft.Because the interface of the waveguide that forms is smooth smooth like this, can reduce the loss in the waveguide simultaneously.The employing of aluminium indium gallium arsenic (AlInGaAs) the Multiple Quantum Well active area of strain compensation mainly is modulating characteristic and the temperature characterisitic in order to improve device.
The making of the p type indium phosphide (InP) of the device among the present invention and p type indium gallium arsenic (InGaAs) contact layer is different from traditional handicraft.After adopting fillet to select growing technology to form aluminium indium gallium arsenic (AlInGaAs) fillet platform shape active area part automatically, do not need epitaxial wafer is taken out from reative cell, but behind the appropriate change growth conditions direct growth p type indium phosphide (InP) and p type indium gallium arsenic (InGaAs) contact layer.Because semi-conducting material can not be in the dielectric mask superficial growth, and,, p type indium phosphide (InP) and p type indium gallium arsenic (InGaAs) contact layer partly grow so can depending on active area because (100) face and (111) B face all are the growth crystal faces of indium phosphide (InP).Because the existence of active area both sides dielectric mask can be limited in injection current the active area part automatically, but also can guarantee the light restriction.On the other hand, reduce the complexity and the cost of device making technics, improved the finished product rate of finished products.
By above twice metal organic chemical vapor deposition (MOCVD) extension, behind the absorption type gain grating that just completed, the trapezoidal active area part of fillet, indium phosphide (InP) and indium gallium arsenic (InGaAs) contact layer.Then, on epitaxial wafer, then deposit the exhausted (SiO of layer of silicon dioxide
2) the edge layer, this one deck silicon dioxide mainly plays electric buffer action.And adopt Alignment Method at silicon dioxide (SiO
2) leave electrode window through ray on the insulating barrier.Make p face electrode and n face electrode at last on epitaxial wafer respectively, the making of tube core has just been finished.
Claims (10)
1. the manufacture method of a buried structure AlInGaAs distributed feedback laser is characterized in that, comprises the steps:
(1) large-area manufacturing absorption type gain coupling grating on substrate;
(2) utilize plasma chemical vapor deposition technique, somatomedin film on epitaxial wafer adopts lithography corrosion technology, makes the dielectric mask figure;
(3) utilize fillet selective epitaxy growing technology, grow successively lower limit layer, active area, upper limiting layer and protective layer form trapezoidal structure;
(4) contact layer of on epitaxial wafer, then growing;
(5) large area deposition one layer insulating on epitaxial wafer, and above trapezoidal active area, leave electrode window through ray;
(6) on epitaxial wafer, make p face electrode;
(7), make n face electrode to the substrate back attenuate of epitaxial wafer;
(8) the cleavage epitaxial wafer is made tube core.
2, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1, it is characterized in that wherein the absorption type gain coupling grating is that growing n-type InGaAsP absorbed layer and n type indium phosphide resilient coating form on the substrate of having scribed periodic optical grating.
3, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1, it is characterized in that, wherein the width of the growth window of dielectric mask figure is about 2 microns, and the width of mask is near 15 microns, and the material of mask is oxides such as silicon dioxide or silicon nitride.
4, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1, it is characterized in that, wherein lower limit layer is a n type aluminium indium gallium arsenic material, and its band gap size is reduced to the numerical value of band gap at the base of active area always from the band gap numerical value of indium phosphide.
5, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1 is characterized in that, wherein active area is the aluminium indium gallium arsenic strain compensation Multiple Quantum Well of intrinsic, and the trap number is 6～10.
6, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1, it is characterized in that, wherein upper limiting layer is a p type aluminium indium gallium arsenic material, and its band gap size increases to the band gap numerical value of indium phosphide always from the numerical value of the band gap at the base of active area.
7, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1 is characterized in that, wherein protective layer is a p type indium phosphide, and trapezoidal active area is covered.
8, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1 is characterized in that, wherein contact layer is made up of p type phosphorization phosphide indium layer and p type ingaas layer.
9, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1 is characterized in that, wherein the material of insulating barrier is oxides such as silicon dioxide or silicon nitride, and this insulating barrier will link to each other with mask.
10, the manufacture method of buried structure AlInGaAs distributed feedback laser according to claim 1 is characterized in that, wherein electrode window through ray be positioned at trapezoidal active area directly over, the insulating barrier etching is formed.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108233175A (en) * | 2018-01-31 | 2018-06-29 | 湖北光安伦科技有限公司 | A kind of production method for burying AlGaInAs Distributed Feedback Lasers |
| CN110970538A (en) * | 2019-11-22 | 2020-04-07 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102142658A (en) * | 2011-02-28 | 2011-08-03 | 北京航星网讯技术股份有限公司 | Method for manufacturing laser chip for natural gas detection |
| CN102142658B (en) * | 2011-02-28 | 2012-10-31 | 北京航星网讯技术股份有限公司 | Method for manufacturing laser chip for natural gas detection |
| CN108233175A (en) * | 2018-01-31 | 2018-06-29 | 湖北光安伦科技有限公司 | A kind of production method for burying AlGaInAs Distributed Feedback Lasers |
| CN108233175B (en) * | 2018-01-31 | 2019-09-06 | 湖北光安伦科技有限公司 | A kind of production method for burying AlGaInAs Distributed Feedback Laser |
| CN110970538A (en) * | 2019-11-22 | 2020-04-07 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
| CN112271209A (en) * | 2020-12-14 | 2021-01-26 | 陕西源杰半导体技术有限公司 | Semiconductor device manufacturing method and semiconductor device |
| CN112271209B (en) * | 2020-12-14 | 2021-08-13 | 陕西源杰半导体科技股份有限公司 | Semiconductor device manufacturing method and semiconductor device |
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