CN101667716B - Double-sided bonding long-wavelength vertical cavity surface emitting laser and manufacturing method thereof - Google Patents
Double-sided bonding long-wavelength vertical cavity surface emitting laser and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a double-sided bonding long-wavelength vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof. The laser comprises an N electrode (1), an N-type GaAs substrate (2), an N-type GaAs/AlGaAs material series lower distributed Bragg reflector (DBR) (3), an InP based strained quantum well active area (4), a GaAs/AlGaAs material series upper DBR (5), a SiO2 mask (8), a P electrode (9) and a light-exiting window (10), wherein the upper DBR (5) consists of a P-type DBR (6) and an intrinsic DBR (7). The structure and the method overcome the defects of smaller refractive index difference, poor thermal conductivity and poor electrical conductivity of DBR materials of the conventional VCSEL, not only can realize good current limit, but also can reduce the absorption consumption and the growth difficulty of the materials and omit the step of secondary epitaxial process.
Description
Technical field
The present invention relates to long-wavelength vertical cavity surface emitting laser of vertical cavity surface emitting laser technical field, particularly bonding structure and preparation method thereof.
Background technology
Vertical cavity surface emitting laser becomes the focus of optoelectronic areas research because low threshold value, circular light beam, high modulation frequency, dynamically single longitudinal mode operation and advantage such as easily two dimension is integrated.1.3 μ m and 1.55 mum wavelength vertical cavity surface emitting lasers are in the low chromatic dispersion and the low decay window of optical fiber, make long-wavelength vertical cavity surface emitting laser have the incomparable advantage of short wavelength VCSEL aspect the middle and long distance optical fiber communication, add this two existing communication standards of wave band and mature technology, make long wavelength VCSEL in middle and long distance high-speed data communications, light interconnection, light parallel processing, light recognition system, application prospect is very wide in metropolitan area network and wide area network, has potentiality before the market.
At 1.3 μ m and 1.55 mum wavelength near zones, can provide the material of high-gain mainly to be based on the material of InP substrate, the InGaAsP QW of InP base and AlGaInAs QW are that the big difficult point of VCSEL is exactly the DBR material with the active layer material lattice match, the refringence of materials such as InGaAsP/InP, AlGaInAs/InP, InAlGaAs/InAlAs is smaller, therefore, make DBR reach reflectivity more than 99%, just need more periodicity, thereby increased epitaxially grown difficulty.And thicker DBR also can bring bigger series resistance, more serious thermal effect and bigger optical loss.On the other hand, the thermal conductivity of quaternary alloy material is low, makes the thermal resistance of device be difficult to reduce, and these factors are compared significantly slowly the progress of InP base long wavelength VCSEL with short wavelength VCSEL.
Wafer bonding techniques, refer to two homogeneities or the combination of heterogeneous wafer surface atomic bonding under uniform temperature, the pressure condition, wafer bonding techniques is not limited by material lattice and crystal orientation mismatch, dislocation is confined to the interface, can remedy the deficiency of material growth, use to designs and material the bigger degree of freedom is provided, make the integrated possibility that becomes between dissimilar materials and the device.
Wafer bonding techniques is applied to 1.3 μ m and 1.55 mum wavelength VCSEL, with the GaAs/AlGaAs material of high reflectance is that Bragg mirror and the InP base active area bonding of forming gets up, it is many to have improved traditional long wavelength VCSEL distribution Bragg reflector number of plies, thermal resistance is big, be difficult to reach high reflectance, the shortcoming of epitaxial growth difficulty.
The normal at present employing of long wavelength VCSEL is buried tunnel junction structure and is realized the electric current restriction, this method requires the high-quality tunnel junction of epitaxial growth, also to add the secondary epitaxy processing step more simultaneously, increase the element manufacturing cost, distribution Bragg reflector be will go up and P type distribution Bragg reflector and intrinsic distribution Bragg reflector two parts will be divided into, adopt the oxidation method for limiting to realize the electric light restriction simultaneously, rather than adopt and bury tunnel junction structure, the long wavelength VCSEL for preparing single inner chamber contact structures, not only can realize good electric current restriction, reduce the difficulty of material growth and removed the secondary epitaxy processing step from.
Summary of the invention
The purpose of this invention is to provide a kind of double-sided bonding long-wavelength vertical cavity surface emitting laser and preparation method thereof.
The present invention relates to a kind of long-wavelength vertical cavity surface emitting laser, described laser comprises N type electrode 1, N type electrode is produced on N type GaAs substrate 2 back sides, N type GaAs substrate 2, distribution Bragg reflector DBR3 under the N type GaAs/AlGaAs, N type DBR is produced on the N type GaAs substrate 2, the N type GaAs/AlGaAs layer 18 and 19 that comprises 32 cycles is formed, InP base strained quantum well active area 4, being clipped between N type DBR3 and the last distribution Bragg reflector DBR5 of sandwich style, by bonding techniques the three is bonded together, last DBR5, be produced on InP base strained quantum well active area 4, form by P type DBR6 and intrinsic DBR7, wherein P type DBR6 is bonded on the InP base strained quantum well active area 4, P type GaAs layer 14 by 1.5 cycles, P type AlGaAs layer 15, P type oxidation limiting layer 16 and P type GaAs layer 17, intrinsic DBR7 is produced on the P type DBR, the intrinsic GaAs/AlGaAs layer 11 and 12 that comprises 23.5 cycles, and thick etch stop layer 13 compositions in λ/4, etch stop layer 13 links to each other with P type GaAs layer 14, and intrinsic GaAs layer 11 links to each other with etch stop layer 13, intrinsic GaAs layer 11 links to each other SiO with intrinsic AlGaAs layer 12
2Mask 8 covers on the sidewall of InP active area 4, P type GaAs layer 14 and intrinsic GaAs layer 11 and the corresponding DBR5 of going up, and P electrode 9 is produced on the P type GaAs layer 14, and light-emitting window 5 is produced on the intrinsic GaAs layer 11 of DBR5.Described laser can pass through double-sided bonding, selective corrosion, wet oxidation etc. method realize, it is less to have improved traditional long-wavelength vertical cavity surface emitting laser distribution Bragg reflector refringence, thermal conductance, electricity is led relatively poor shortcoming, DBR5 be will go up simultaneously and P type DBR6 and intrinsic DBR7 composition will be divided into, adopt the oxidation method for limiting to realize the electric light restriction, rather than adopt and bury tunnel junction structure, the long wavelength VCSEL for preparing the inner chamber contact structures, not only can realize good electric current restriction, and reduce the absorption loss of material, the difficulty of material growth and remove the secondary epitaxy processing step from.
The invention still further relates to is a kind of manufacture method of long-wavelength vertical cavity surface emitting laser structure, it is characterized in that, this manufacture method comprises the steps:
1) adopt mocvd method at N type GaAs substrate 2 growth N type DBR3, N type DBR3 comprises the GaAs/AlGaAs layer 18 and 19 in 32 cycles, the AlGaAs layer 19 of growing earlier, and regrowth GaAs layer 18 repeats 32 such growth cycles altogether.
2) adopt molecular beam epitaxy accretion method at the InP substrate In that grows successively
0.47Ga
0.53As stops layer and InP base active area 4, active area materials can be an InGaAsP strain volume trap active area, it also can be AlGaInAs strain volume trap active area, 3-8 optimal design of number design of quantum well is 5, the active area optical thickness is designed to n/2 λ, and n is an odd number, and optimal design is 1.5 λ, λ is an excitation wavelength, and active area is N-i-P type from top to bottom.
3) adopt mocvd method distribution Bragg reflector DBR5 in the growth of N type GaAs substrate, at the N type GaAs substrate etch stop layer (so that postorder bonding technology post-etching removes the GaAs substrate) of growing successively, intrinsic DBR7 and P type DBR6.Intrinsic DBR5 lays respectively on the different GaAs substrates with N type DBR3, is bonded together by bonding method and InP base active area 4.
4) by the Direct Bonding technology N type DBR3 and InP base active area 4 are bonded together, finish bonding for the first time, attenuate InP substrate reduces to 50-60 μ m then, adopts the method for chemical corrosion to remove InP substrate and corresponding In again
0.47Ga
0.53As etch stop layer 20.
5) will go up DBR5 by the Direct Bonding technology is bonded together with active area 4 and the following DBR3 that bonding is good, finish bonding for the second time, attenuate has DBR5 substrate one side then, reduces to 50-60 μ m, adopts the method for chemical corrosion to remove GaAs substrate and corresponding etch stop layer again.
6) by standard photoetching mask technique, form the cylindrical mesa figure, do mask with photoresist and carry out wet chemical etching technique intrinsic DBR7.
7) form last second cylindrical mesa figure with the standard alignment process, be mask wet etching P type DBR6 with photoresist, expose the sidewall of oxidation limiting layer 16.
8) will expose sidewall Al by wet process oxidation technology
0.98Ga
0.02As or AlAs layer 16 carry out lateral oxidation, form electricity, light limiting aperture, and oxide-aperture is controlled at about 10～20 microns.
9) with 300 ℃ of growths of plasma reinforced chemical vapor deposition (PECVD) SiO
28, remove annular electrode aperture and light-emitting window SiO by standard photoetching, corrosion
2, the DBR6 sidewall forms mask on the P type simultaneously, to prevent short circuit current.
10) evaporation P electrode 9 forms mask by standard photolithography process again, and corrosion forms P electrode 9 shapes then.
11) attenuate, polishing N type GaAs substrate 2, evaporation N electrode 1 carries out Alloying Treatment then.
The principal character of this structure and manufacture method is as follows:
1) upper and lower DBR5 and the 3 GaAs/AlGaAs material system that is high index-contrast 0.5, good conductivity and thermal conductivity forms;
2) go up distribution Bragg reflector 5 and be made up of P type distribution Bragg reflector 6 and intrinsic distribution Bragg reflector 7, not only can reduce absorption loss, and include the oxidation limiting layer, the convenient electric current of realizing limits;
3) active area is the material of InP base, active area be n λ/2, wherein n is an odd number, λ is an excitation wavelength;
4) upper and lower DBR3,5 with active area 4 respectively at different substrates, adopt the growth of different extensional mode, and adopt the method for double-sided bonding that three parts are bonded together;
5) the AlGaAs lateral oxidation to high Al component of employing wet oxidation realizes electricity, light stream restriction, rather than adopts and bury tunnel junction structure, reduces material growth difficulty, has also removed secondary epitaxy technology from;
6) wet etching method forms two coaxial cylindrical mesa with intrinsic DBR7 and P type DBR6, and P type electrode 9 is produced on the P type GaAs layer 14 of P type DBR6, and the N electrode is produced on the N type GaAs substrate 2, belongs to single inner chamber contact structures vertical cavity laser.
It is many that the present invention has overcome traditional long-wavelength vertical cavity surface emitting laser distribution Bragg reflector number of plies, and thermal resistance is big, is difficult to reach high reflectance, the shortcoming of epitaxial growth difficulty.
Description of drawings
Fig. 1 is the schematic diagram of double-sided bonding long-wavelength surface-emitting laser;
Fig. 2 is the PL spectrum of AlGaInAs quantum well active area;
Fig. 3 is the optical photograph behind the double-sided bonding substrate etching;
Fig. 4 is ESEM (SEM) figure behind upper and lower DBR and the active area bonding;
Fig. 5 is the reflection spectrogram of double-sided bonding VCSEL device;
Fig. 6 is the microphotograph figure of corrosion bright dipping important actor;
Fig. 7 is the microphotograph figure behind the wet oxidation;
Fig. 8 is Al
0.98Ga
0.02Microphotograph figure behind As layer 16 partial oxidation;
Fig. 9 is the microphotograph figure behind the corrosion SiO2
Figure 10 is the microphotograph figure behind the corrosion TiAu
Figure 11 is the horizontal SEM figure of double-sided bonding long-wavelength surface-emitting laser;
Figure 12 (a) is the P-I curve of 16 μ m oxide-aperture double-sided bonding VCSEL devices;
Figure 12 (b) is the P-I curve of 20 μ m oxide-aperture double-sided bonding VCSEL devices;
Figure 13 is the emission spectrum figure of 20 μ m oxide-aperture double-sided bonding VCSEL devices;
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
See also accompanying drawing 1 to Figure 13.The object of the invention provides a kind of double-sided bonding long-wavelength vertical cavity surface emitting laser.
The structure of described laser is as follows:
Fig. 1 is a double-sided bonding long-wavelength surface-emitting laser schematic diagram of the present invention.Described laser comprises N type electrode 1, and N type electrode is produced on N type GaAs substrate 2 back sides, N type GaAs substrate 2, N type GaAs//Al
0.9Ga
0.1Distribution Bragg reflector DBR3 under the As AlGaAs, N type DBR are produced on the N type GaAs substrate 2, comprise the N type GaAs/Al in 32 cycles
0.9Ga
0.1As layer 18 and 19 is formed, InP base strained quantum well active area 4, being clipped between N type DBR3 and the last distribution Bragg reflector DBR5 of sandwich style, by bonding techniques the three is bonded together, last DBR5 is produced on InP base strained quantum well active area 4, form by P type DBR6 and intrinsic DBR7, wherein P type DBR6 is bonded on the InP base strained quantum well active area 4, by the P type GaAs layer 14 in 1.5 cycles, P type/Al
0.9Ga
0.1As AlGaAs layer 15, P type/Al
0.98Ga
0.02As oxidation limiting layer 16 and P type GaAs layer 17, intrinsic DBR7 is produced on the P type DBR6, comprises the intrinsic GaAs//Al in 23.5 cycles
0.9Ga
0.1As AlGaAs layer 11 and 12, and thick etch stop layer 13 compositions in λ/4, etch stop layer 13 links to each other with P type GaAs layer 14, and intrinsic GaAs layer 11 links to each other with etch stop layer 13, and intrinsic GaAs layer 11 links to each other SiO with intrinsic AlGaAs layer 12
2Mask 8 covers on the sidewall of InP active area 4, P type GaAs layer 14 and intrinsic GaAs layer 11 and the corresponding DBR5 of going up, and P electrode 9 is produced on the P type GaAs layer 14, and light-emitting window 10 is produced on the intrinsic GaAs layer 11 of DBR5.
The present invention also provides a kind of manufacture method of double-sided bonding long-wavelength vertical cavity surface emitting laser, and described method comprises the steps:
1) adopt mocvd method at N type GaAs substrate 2 growth N type DBR3, N type DBR3 comprises the GaAs/AlGaAs layer 18 and 19 in 32 cycles, the AlGaAs layer 19 of growing earlier, and regrowth GaAs layer 18 repeats 32 such growth cycles altogether.
2) adopt molecular beam epitaxy accretion method at the InP substrate In that grows successively
0.47Ga
0.53As stops layer and InP base active area 4, and active area materials is an AlGaInAs strain volume trap active area, and quantum well number optimal design is 5, and the active area optical thickness is made as meter 1.5 λ, and λ is an excitation wavelength, and active area is the N-i-P type from top to bottom.The room temperature photoluminescence spectrum of AlGaInAs strain volume trap active area is seen Fig. 2, peak wavelength 1284nm, half-breadth 48.3nm.
3) adopt mocvd method in another one at N type GaAs substrate grow successively etch stop layer and last distribution Bragg reflector DBR5, last DBR5 lays respectively on the different GaAs substrates with N type DBR3, is bonded together by bonding method and InP base active area 4.Concrete succession: at the N type GaAs substrate etch stop layer (so that postorder bonding technology post-etching removes the GaAs substrate) of growing successively, intrinsic DBR7 and P type DBR6.Intrinsic DBR7 is by the intrinsic GaAs/Al in 23.5 cycles
0.9Ga
0.1As layer 11 and 12, and the thick etch stop layer 13 in λ/4 is formed succession GaAs layer 11Al
0.9Ga
0.1As layer 12 repeats 23.5 cycle GaAs/Al
0.9Ga
0.1The As layer, the etch stop layer 13 of growing then; P type DBR6 wherein is by P type GaAs layer 14, the Al in 1.5 cycles
0.9Ga
0.1The P type Al that As layer 1530nm is thick
0.98Ga
0.02As oxidation limiting layer 16 and P type GaAs layer 17, P type GaAs layer 14 are grown in etch stop layer 13, and succession is a layer P type GaAs layer 14 successively, P type/Al
0.9Ga
0.1As AlGaAs layer 15, P type Al
0.98Ga
0.02Asization limiting layer 16 and P type GaAs layer 17.
4) adopt the Direct Bonding technology that active area 4 is bonded together with N type DBR3, bonded interface is InP/GaAs, and attenuate InP substrate one side is reduced to 50-60 μ m then, adopts the method for chemical corrosion to remove InP substrate and corresponding In again
0.47Ga
0.53The As etch stop layer, it is HCl:H that the corrosive liquid that the InP substrate is removed adopts volume ratio
2O (3:1), volume ratio H is adopted in the removal of etch stop layer InGaAs
3PO
4: H
2O
2: H
2O (1:5:5) corrosive liquid.
5) will go up DBR5 by the Direct Bonding technology is bonded together with active area 4 and the N type DBR3 that bonding is good, bonded interface is InP/GaAs, finish bonding for the second time, attenuate has Bragg mirror substrate one side then, be reduced to 50-60 μ m, adopt the method for chemical corrosion to remove GaAs substrate and corresponding etch stop layer again, the corrosive liquid that the GaAs substrate is removed adopts volume ratio NH4OH:H
2O
2(1:20), volume ratio HCL:H is adopted in the removal of etch stop layer
2O (2:1) corrosive liquid.
Fig. 3 is the optical photograph of double-sided bonding substrate etching after removing, as can be seen from the figure, after the double-sided bonding substrate etching is removed, 1 * 1cm
2Double-sided bonding wafer surface light is smooth, no bubble, and bonding area is greater than 95%.
Respective scanned electron microscope picture SEM sees 4, and bonded interface is very complete clear as seen from Figure 4.
Corresponding reflection spectrogram is seen Fig. 5, the centre wavelength 1312nm of reflectance spectrum, and high reflection passband width 122nm, because last DBR logarithm is more, the position of reflectance spectrum lumen film is not clearly.
6) by standard photoetching mask technique, form column type table top figure, do mask with photoresist and carry out wet chemical etching technique intrinsic Bragg mirror.
7) form last second column type table top figure with the standard alignment process, do mask wet etching P type Bragg mirror 6 with photoresist, expose the sidewall of oxidation limiting layer 16.Fig. 6 is the microphotograph figure of corrosion bright dipping important actor.
8) by wet process oxidation technology to the thick Al of 30nm
0.98Ga
0.02As layer 16 carries out lateral oxidation, forms electricity, light limiting aperture, and oxide-aperture is controlled at 10～20 microns, and the microphotograph after the oxidation is seen Fig. 7.Wet process oxidation technology condition: nitrogen N
2Flow 1L/min, 95 ℃ of bath temperatures, 430 ℃ of oxidation furnace temperature, oxidation rate 1 μ m/min, Fig. 8 are the thick Al of 30nm
0.98Ga
0.02The microphotograph figure of As oxidation after 30 minutes, the circular hole at center is oxygen oxidized portion not among the figure, about 20 microns of oxide-aperture, the outer annulus of circular hole partly are oxidized portion.
9) with 300 ℃ of growths of plasma reinforced chemical vapor deposition (PECVD) SiO
28, remove annular electrode aperture and light-emitting window by standard photoetching, corrosion, distribution Bragg reflector 6 sidewalls form mask on the P type simultaneously, to prevent short circuit current, see Fig. 9.
10) evaporation TiAu P type electrode, by standard photolithography techniques, corrosion TiAu obtains P electrode 9, sees Figure 10.
11) attenuate, polishing N type GaAs substrate 2, evaporation N type AuGeNi/Au electrode 1 carries out Alloying Treatment, alloy condition, 430-450 ℃ of alloy temperatures, 45 seconds then.SEM Figure 11 through complete process double-sided bonding long-wavelength VCSEL device cross section has clearly demonstrated last DBR5, active area 4 and N type DBR6 among the figure, corresponding inner chamber contact device architecture.
Figure 12 (a) and Figure 12 (b) are respectively oxide-aperture 16 μ m, 20 μ m double-sided bonding VCSEL devices are under room temperature follow-on test condition, corresponding P-I curve, among contrast Figure 12 (a) and Figure 12 (b) as can be seen, along with oxide-aperture becomes big, it is big that threshold current becomes, and increased to the 3mA of 20um oxide-aperture by the 1.5mA of 16 μ m oxide-apertures.Under the injection current of the 7.8mA of 16um oxide-aperture device, power output reaches 92uW; Under the injection current of the device 17.8mA of 20 oxide-apertures, power output 0.15mW.
Figure 13 is 20 μ m oxide-aperture devices, in 0.1% duty ratio, and emission spectrum under the 58.3mA electric current, emission wavelength 1273.6nm, half-breadth 0.2nm.
The above; it only is the preferred embodiment that proposes according to technical solution of the present invention; be not that the present invention is done any pro forma restriction; every technical solution of the present invention content that do not break away from;, all still belong in the claim protection range of the present invention simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (5)
1. a double-sided bonding long-wavelength vertical cavity surface emitting laser is characterized in that, described laser comprises:
One N electrode (1), this N electrode (1) be produced on substrate (2) below;
One substrate (2), this substrate (2) are N type GaAs substrate;
The following distribution Bragg reflector (3) of one GaAs/AlGaAs material system comprises N type GaAs layer (the 18)/AlGaAs layer (19) in 32 cycles, and the light that is used in the reflector laser chamber forms laser generation;
One InP base active area (4), this InP base active area (4) is connected with following distribution Bragg reflector (3) by bonding method, be used for forming the gain of light, active area materials is InGaAsP volume trap material or AlGaInAs volume trap material, the optical thickness of active area is n λ/2, wherein n is an odd number, and λ is an excitation wavelength;
The last distribution Bragg reflector (5) of one GaAs/AlGaAs material system, the method by bonding is produced on InP base active area (4) top position, be used to form electric current injection aperture, and the light that is used in the reflector laser chamber forms laser generation; Last distribution Bragg reflector (5) is made up of P type distribution Bragg reflector (6) and intrinsic distribution Bragg reflector (7), P type distribution Bragg reflector (6) wherein, P type GaAs ohmic contact layer (14) by 1.5 cycles, P type AlGaAs layer (15), P type oxidation limiting layer (16) and P type GaAs layer (17) are formed, and oxidation limiting layer material is the Al of high Al component
0.98Ga
0.02As or AlAs layer; Intrinsic distribution Bragg reflector (7), by intrinsic GaAs layer (the 11)/AlGaAs layer (12) in 23.5 cycles, and the thick etch stop layer (13) in λ/4 is formed;
One SiO
2Mask (8) is deposited on active area (4) and the last distribution Bragg reflector (5), plays the effect of insulation and forms light window (10) purpose;
One P electrode (9), this P electrode (9) is produced on the both sides of active area P type distribution Bragg reflector, forms the inner chamber contact, is used for electric current and injects;
One light-emitting window (10).
2. the manufacture method of a double-sided bonding long-wavelength vertical cavity surface emitting laser is characterized in that, described method comprises the steps:
1) adopts mocvd method distribution Bragg reflector (3) under N type GaAs substrate (2) growth, N type GaAs layer (the 18)/AlGaAs layer (19) in 32 cycles of growth;
2) adopt molecular beam epitaxy accretion method at InP substrate growth In
0.47Ga
0.53As etch stop layer and InP base active area (4), active area materials is InGaAsP strain volume trap material or AlGaInAs strain volume trap material, and the active area optical thickness is designed to n λ/2, and wherein n is an odd number, λ is an excitation wavelength, and active area is the N-i-P type from top to bottom;
3) adopt mocvd method distribution Bragg reflector (5) in the growth of another one N type GaAs substrate, at the N type GaAs substrate etch stop layer of growing successively, intrinsic distribution Bragg reflector (7) and P type distribution Bragg reflector (6), P type distribution Bragg reflector (6) wherein, P type GaAs ohmic contact layer (14) by 1.5 cycles, P type AlGaAs layer (15), P type oxidation limiting layer (16) and P type GaAs layer (17) are formed, intrinsic distribution Bragg reflector (7) is by intrinsic GaAs layer (the 11)/AlGaAs layer (12) in 23.5 cycles, and the thick etch stop layer (13) in λ/4 is formed; Oxidation limiting layer material is the Al of high Al component
0.98Ga
0.02As or AlAs;
4) InP base active area (4) and following minute Prague speculum (3) employing bonding techniques are bonded together, attenuate InP substrate one side reduces to 50-60 μ m then, adopts the method for chemical corrosion to remove InP substrate and corresponding In again
0.47Ga
0.53The As etch stop layer;
5) will go up distribution Bragg reflector (5) by the Direct Bonding technology is bonded together with InP base active area (4) and the following distribution Bragg reflector (3) that bonding is good, attenuate has distribution Bragg reflector substrate one side then, be reduced to 50-60 μ m, adopt the method for chemical corrosion to remove GaAs substrate and corresponding etch stop layer again;
6) by standard photoetching mask technique, form the cylindrical mesa figure, do mask with photoresist and carry out wet chemical etching technique intrinsic distribution Bragg reflector;
7) form second cylindrical mesa figure with the standard alignment process, do mask wet etching P type distribution Bragg reflector (6) with photoresist, expose the sidewall of oxidation limiting layer (16);
8) will expose sidewall Al by wet process oxidation technology
0.98Ga
0.02As or AlAs layer (16), nitrogen N
2Carry steam and enter in the oxidation furnace, lateral oxidation forms electricity, light limiting aperture, and oxide-aperture is controlled at about the 10-20 micron;
9) high growth temperature SiO
2(8), remove the SiO in annular electrode aperture and the light-emitting window by standard photoetching, corrosion
2, form mask at P type distribution Bragg reflector (6) sidewall simultaneously, to prevent short circuit current;
10) evaporation P electrode (9) forms mask by standard photolithography process again, and corrosion forms P electrode (9) shape then;
11) attenuate, polishing N type GaAs substrate (2), evaporation N electrode (1) carries out Alloying Treatment then.
3. the manufacture method of double-sided bonding long-wavelength vertical cavity surface emitting laser according to claim 2, it is characterized in that, described upper and lower distribution Bragg reflector and InP base active area (4) is respectively at different substrates, adopt different extensional mode growths, and adopt the method for double-sided bonding that three parts are bonded together.
4. the manufacture method of double-sided bonding long-wavelength vertical cavity surface emitting laser according to claim 2 is characterized in that, adopts wet nitrogen oxidation Al
0.98Ga
0.02The method of As or AlAs layer (16) realizes the electric current restriction.
5. the manufacture method of double-sided bonding long-wavelength vertical cavity surface emitting laser according to claim 2, it is characterized in that, wet etching intrinsic distribution Bragg reflector (7) and P type distribution Bragg reflector (6) at twice, form two coaxial table tops, and P type electrode (9) is produced on the P type distribution Bragg reflector (6), the N electrode is produced on the substrate (2), belongs to single inner chamber contact structures vertical cavity surface emitting laser.
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