CN109103745B - VCSEL structure with air gap DBR and preparation method thereof - Google Patents

VCSEL structure with air gap DBR and preparation method thereof Download PDF

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CN109103745B
CN109103745B CN201811245161.1A CN201811245161A CN109103745B CN 109103745 B CN109103745 B CN 109103745B CN 201811245161 A CN201811245161 A CN 201811245161A CN 109103745 B CN109103745 B CN 109103745B
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dbr
air gap
layer
type
conductive substrate
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CN109103745A (en
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周广正
黄瑞
代京京
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Chuangzhi Lianhui Chongqing Technology Co ltd
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Chuangzhi Lianhui Chongqing Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The applicationThe VCSEL structure with air gap DBR comprises a conductive substrate with N-side electrode on its back surface, N-type GaAs buffer layer, N-type DBR and quantum well active region sequentially grown on the surface of the conductive substrate from bottom to top, oxidation limiting layer grown on one region of the surface of the quantum well active region, aluminum oxide product Al arranged on the same layer of the periphery of the oxidation limiting layer x O y Circular ring, oxidation limiting layer and aluminum oxidation product Al x O y A planar circular P-type DBR is arranged on the surface of the aluminum oxide product Al x O y The surface of the quantum well active region which is arranged outside the same layer of the P-type DBR is provided with SiO 2 The filling layer, the surface of the P-type DBR is provided with an air gap DBR, siO 2 The surface of the filling layer is provided with a P-surface electrode. The application also provides a preparation method of the VCSEL structure, wherein the air gap DBR is a DBR structure of AlGaAs/air materials formed at the light emergent hole through oxidation and corrosion processes, and high Al component AlGaAs which is not oxidized and corroded is reserved at two sides as a supporting material. The refractive index difference of the DBR material is increased by adopting the air gap structure DBR.

Description

VCSEL structure with air gap DBR and preparation method thereof
Technical Field
The application relates to the technical field of semiconductors, in particular to a VCSEL structure with an air gap DBR and a preparation method thereof.
Background
The Vertical-Cavity Surface-Emitting Laser (VCSEL) has the advantages of low power consumption, easiness in two-dimensional integration, easiness in coupling of circular light spots with optical fibers, cost saving in on-chip testing and the like, and is widely applied to the fields of 3D sensing, laser printing, optical communication, optical storage and the like. The VCSEL generally includes a pillar resonator structure including a buffer layer, a lower DBR (Distributed Bragg Reflection, distributed bragg reflector), a lower confinement layer, a quantum well light emitting layer, an upper confinement layer, an upper DBR, and an ohmic contact layer. To reduce the threshold current, oxidation or proton implantation is used to form a current limiting structure. Electrodes are respectively manufactured on the ohmic contact layer and the back surface of the substrate, current is injected into the quantum well active region from the electrodes, electrons and holes are combined in the quantum well to emit light, and laser is emitted from the top of the resonator structure through reflection of the upper DBR and the lower DBR. The quantum well gain is only about 1%, so the reflectivity of the upper and lower DBRs is above 99%. In the near infrared range, DBR's typically employ high and low composition AlGaAs materials. The reflectivity of a DBR is related to the refractive index difference of the DBR material and the DBR logarithm, while the series resistance of the DBR and the absorption of light are both proportional to the DBR logarithm. However, the inventors of the present application have found that the refractive index difference between the DBR high and low refractive index materials in the conventional VCSEL structure is relatively small.
Disclosure of Invention
Aiming at the technical problem that the refractive index difference of DBR high and low refractive index materials in the existing VCSEL structure is smaller, the application provides the VCSEL structure with the air gap, and the AlGaAs material with the high Al component in the DBR is replaced by air, so that the refractive index difference of the DBR material is increased, the DBR logarithm is reduced, and the series resistance and the light absorption are further reduced.
In order to solve the technical problems, the application adopts the following technical scheme:
the VCSEL structure with air gap DBR comprises a conductive substrate, wherein the back surface of the conductive substrate is provided with an N-surface electrode, the surface of the conductive substrate is sequentially epitaxially grown with an N-type GaAs buffer layer, an N-type DBR and a quantum well active region from bottom to top, a region of the surface of the quantum well active region is epitaxially grown with a circular oxidation limiting layer, and the peripheral same layer of the circular oxidation limiting layer is provided with an aluminum oxidation product Al x O y A circular ring, a circular oxidation limiting layer and aluminum oxidation products Al x O y A planar circular P-type DBR is arranged on the surface of the aluminum oxide product Al x O y The surface of the quantum well active region which is arranged outside the same layer of the P-type DBR is provided with SiO 2 The filling layer is arranged on the surface of the P-type DBR, and the air gap DBR is arranged on the surface of the P-type DBR, and the SiO is arranged on the surface of the P-type DBR 2 The surface of the filling layer is provided with a P-face electrode which is electrically connected with the P-type DBR and matched with the air gap DBR.
Further, the round oxidation limiting layer is Al x1 Ga 1-x1 As, x1 has a typical value of 0.98, the thickness of the circular oxidation limiting layer is 30nm, the diameter d of the circular oxidation limiting layer 1 Is 5 μm.
Further, the P-type DBR consists of 3 pairs of lambda 0 Al of optical thickness/4 0.12 Ga 0.88 As/Al x2 Ga 1-x2 As material stack, a typical value for x2 is 0.8; wherein lambda is 0 Is the lasing wavelength of the VCSEL.
Further, the air gap DBR consists of 10-12 pairs of lambda 0 Al of optical thickness/4 0.12 Ga 0.88 An As/air material and Al not oxidized x3 Ga 1-x3 As is used As a support column, i.e. the air gap DBR comprises multiple layers of Al with upper and lower structures 0.12 Ga 0.88 As high refractive index material, two layers of Al adjacent to each other up and down 0.12 Ga 0.88 Two unoxidized Al are arranged between As high refractive index materials x3 Ga 1-x3 As support columns, each layer of Al 0.12 Ga 0.88 The structure of the As high refractive index material is a dumbbell-shaped plane structure formed by butt joint of double fan-shaped structures with the same circle, and each Al x3 Ga 1-x3 The As support column is a sector column, and two layers of Al are adjacent from top to bottom 0.12 Ga 0.88 Two Al's between As high refractive index materials x3 Ga 1-x3 As support columns, opposite fan-shaped center vertexes and provided with an air gap distance d 2 The air gap spacing d 2 Diameter d greater than the circular oxidation limiting layer 1 The method comprises the steps of carrying out a first treatment on the surface of the Wherein lambda is 0 Is the lasing wavelength of the VCSEL.
Further, the typical value of x3 is 0.92, d 2 Is typically 7 μm.
Further, the P-plane electrode has two branches and Al in the air gap DBR 0.12 Ga 0.88 The thin waist in the middle of the As dumbbell type plane structure is matched.
Further, the Al 0.12 Ga 0.88 Thin waist width d in middle of As dumbbell-shaped plane structure 4 Preferably 8 μm.
Further, the aluminum oxidation product Al x O y The outer diameter of the circular ring and the diameter of the P-type DBR are d 3 And the diameter d 3 Preferably 25 μm.
The application also provides a preparation method of the VCSEL structure with the air gap DBR, which comprises the following steps:
s1, selecting an N-type GaAs conductive substrate, putting the N-type GaAs conductive substrate into red light MOCVD, and introducing H 2 And AsH 3 Removing surface water and oxide, and conducting electricityAn N-type GaAs buffer layer, an N-type DBR, an InGaAs/AlGaAs quantum well active region, a circular oxidation limiting layer, a P-type DBR and an air gap DBR are sequentially epitaxially grown on the surface of the substrate from bottom to top;
s2, forming two table tops through twice photoetching and dry etching: the first table top from bottom to top is cylindrical and etched to the quantum well active region, the second table top is two sectors which are symmetrical left and right, and etched to the P-type DBR; placing the etched epitaxial wafer into an oxidation furnace, and introducing N 2 And steam, the temperature in the furnace is 420-430 ℃, alGaAs material with high Al component is oxidized into Al x O y The method comprises the steps of carrying out a first treatment on the surface of the By infrared CCD monitoring, oxide layer formation, al at air gap DBR x3 Ga 1-x3 As is oxidized and penetrated, and remains unoxidized Al x3 Ga 1-x3 As is used As a support column;
s3, depositing SiO on the first table top by PECVD 2 To be flush with the second table top, then at the second table top and SiO 2 Manufacturing a P-surface electrode;
s4, using wet etching to form Al in the air gap DBR x O y Etching away to form an air gap structure and unoxidized Al x3 Ga 1-x3 As is used As a support column;
s5, thinning the conductive substrate, sputtering an N-face electrode on the back face, and forming the VCSEL structure with the air gap DBR.
Further, in the step S5, the conductive substrate is thinned to 100 μm.
Compared with the prior art, the VCSEL structure with the air gap DBR and the preparation method thereof have the following beneficial effects: the air gap DBR structure of the application increases the refractive index difference of the materials with high and low refractive indexes of the DBR, can greatly reduce the number of DBR pairs under the condition of keeping the reflectivity of the DBR unchanged, further reduces the series resistance of the DBR and the absorption loss of light, and improves the inclined efficiency and the photoelectric conversion efficiency of the VCSEL structure.
Drawings
Fig. 1 is a schematic view of a VCSEL structure with an air gap DBR according to the present application.
Fig. 2a is a schematic top view of a VCSEL structure with an air gap DBR according to the present application.
Fig. 2b is a schematic cross-sectional view of a VCSEL structure with an air gap DBR according to the present application.
Fig. 3 is a schematic diagram of a structure of an embodiment of the present application grown epitaxially on a conductive substrate using MOCVD.
Fig. 4a is a schematic structural diagram of the embodiment of the present application after photolithography and dry etching.
FIG. 4b is a schematic diagram of an oxidized structure according to an embodiment of the present application.
FIG. 5 is a schematic diagram of an embodiment of the present application via SiO 2 And flattening and manufacturing a structural schematic diagram of the P-face electrode.
Fig. 6 is a schematic diagram of an air gap DBR structure obtained after wet etching according to an embodiment of the present application.
In the figure, 10, a conductive substrate; 11. an N-type GaAs buffer layer; 12. an N-type DBR; 13. a quantum well active region; 14. a circular oxidation limiting layer; 141. al as an oxidation product of aluminum x O y The method comprises the steps of carrying out a first treatment on the surface of the 15. A P-type DBR; 16. an air gap DBR; 160. al (Al) 0.12 Ga 0.88 As high refractive index material; 161. al (Al) x3 Ga 1-x3 An As support column; 162. an air gap; 20. SiO (SiO) 2 A filling layer; 30. a P-plane electrode; 31. an N-side electrode.
Detailed Description
The application is further described with reference to the following detailed drawings in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the implementation of the application easy to understand.
In the description of the present application, it should be understood that the terms "longitudinal," "radial," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships that are based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
Referring to fig. 1, 2a and 2b, the present application provides a VCSEL structure with an air gap DBR, comprising a conductive substrate 10, an N-side electrode 31 is disposed on the back surface of the conductive substrate 10, an N-type GaAs buffer layer 11, an N-type DBR12 and a quantum well active region 13 are sequentially epitaxially grown on the surface of the conductive substrate 10 from bottom to top, a circular oxidation limiting layer 14 is epitaxially grown on a region of the surface of the quantum well active region 13, and an aluminum oxide product Al is disposed on the same layer on the periphery of the circular oxidation limiting layer 14 x O y 141 ring, the circular oxidation limiting layer 14 and aluminum oxidation product Al x O y 141 is provided with a planar circular P-type DBR15 on the surface of the aluminum oxide product Al x O y 141 and the quantum well active region 13 outside the same layer of the P-type DBR15 are provided with SiO 2 A filler layer 20, i.e. the SiO 2 The thickness of the filling layer 20 is the sum of the thicknesses of the circular oxide confinement layer 14 and the P-type DBR15, the surface of the P-type DBR15 is provided with an air gap DBR16, and the SiO 2 The surface of the filling layer 20 is provided with a P-plane electrode 30 electrically connected to the P-type DBR15 and matching the air gap DBR 16.
As a specific example, the circular oxidation limiting layer 14 is Al x1 Ga 1-x1 Typical values for As, x1 are 0.98, the thickness of the circular oxidation limiting layer 14 is 30nm, the diameter d of the circular oxidation limiting layer 14 1 Is 5 μm. With the circular oxidation limiting layer 14 described in this embodiment, current and optical field limiting can be thereby created, reducing the threshold current.
As a specific example, the P-type DBR15 is composed of 3 pairs lambda 0 Al of optical thickness/4 0.12 Ga 0.88 As/Al x2 Ga 1-x2 As material stack, a typical value for x2 is 0.8; wherein lambda is 0 Is the lasing wavelength of the VCSEL. With the P-type DBR15 described in this embodiment, a part of reflectivity can be provided, and a current is thereby introduced into the active region.
As a specific example, the air gap DBR16 consists of 10-12 pairs lambda 0 Al of optical thickness/4 0.12 Ga 0.88 An As/air material and Al not oxidized x3 Ga 1-x3 As is used As a support column, i.e. the air gap DBR16 comprises multiple layers of Al in an up-down configuration 0.12 Ga 0.88 As high refractive index material 160, two layers of Al adjacent to each other up and down 0.12 Ga 0.88 Between the As high refractive index materials 160 are disposed two unoxidized Al x3 Ga 1-x3 As support columns 161, each layer of Al 0.12 Ga 0.88 The structure of the As160 high refractive index material is a dumbbell-shaped plane structure formed by butt joint of double fan-shaped structures with the same circle, and each Al x3 Ga 1-x3 As support column 161 is a sector column, and two layers of Al are adjacent to each other at the upper and lower sides 0.12 Ga 0.88 Two Al's between As160 high refractive index materials x3 Ga 1-x3 As support columns 161 with fan-shaped center apexes facing each other and having an air gap spacing d 2 I.e. two Al x3 Ga 1-x3 Between the As support columns 161, air gaps 162 are oppositely formed, and the air gaps have a distance d 2 Greater than diameter d of circular oxidation limiting layer 14 1 The method comprises the steps of carrying out a first treatment on the surface of the Wherein lambda is 0 Is the lasing wavelength of the VCSEL. The air gap DBR16 of the present embodiment reduces the number of pairs by 8 to 10 compared with conventional ones of AlGaAs materials having high and low refractive indices, thereby reducing light absorption and improving the electro-optical conversion efficiency of the device.
As a specific example, the typical value of x3 is 0.92, and d 2 Is typically 7 μm.
As a specific embodiment, the P-side electrode 30 has two branches and Al in the air gap DBR16 0.12 Ga 0.88 Thin waist matching in the middle of As160 dumbbell-shaped planar structure, thereby increasing electricityThe contact area of the electrode reduces the contact resistance.
As a specific embodiment, the Al 0.12 Ga 0.88 Thin waist width d in middle of As160 dumbbell-shaped plane structure 4 Preferably 8 μm.
As a specific example, the aluminum oxidation product Al x O y The outer diameter of the 141 ring and the diameter of the P-type DBR15 are d 3 And the diameter d 3 Preferably 25 μm.
The application also provides a preparation method of the VCSEL structure with the air gap DBR, which comprises the following steps:
s1, selecting an N-type GaAs conductive substrate 10, putting the N-type GaAs conductive substrate into red light MOCVD, and introducing H 2 And AsH 3 Removing surface water and oxide, and then introducing TMGa, TMAl, si, which is well known to those skilled in the art, into the chamber 2 H 6 TMIn and CBr 4 The raw materials are sequentially epitaxially grown on the surface of the conductive substrate from bottom to top, and the grown structure is shown in figure 3, wherein the N-type GaAs buffer layer 11, the N-type DBR12, the InGaAs/AlGaAs quantum well active region 13, the circular oxidation limiting layer 14, the P-type DBR15 and the air gap DBR16 are formed; specific epitaxial growth methods are well known to those skilled in the art, and are not described herein;
s2, forming two table tops through twice photoetching and dry etching: the first table top from bottom is cylindrical, etched to the quantum well active region 13, wherein the aluminum oxide product Al x O y Outer diameter of 141 ring and diameter d of P-type DBR15 3 25 μm; the second mesa is in the shape of two sectors which are symmetrical left and right, and etched to the P-type DBR15, wherein Al 0.12 Ga 0.88 Thin waist width d in middle of As160 dumbbell-shaped plane structure 4 8 μm; placing the etched epitaxial wafer into an oxidation furnace, and introducing N 2 And steam, the temperature in the furnace is 420-430 ℃, alGaAs material with high Al component is oxidized into Al x O y The method comprises the steps of carrying out a first treatment on the surface of the The oxide layer forms an oxide aperture of 5 mu m as a light outlet hole by monitoring with an infrared CCD, and Al is arranged at the air gap DBR16 x3 Ga 1-x3 As is oxidized and penetrated, and remains unoxidized Al x3 Ga 1-x3 As is used As a support column, as shown in FIG. 4aThe method comprises the steps of carrying out a first treatment on the surface of the Since the oxidation depth is related to the Al component and the oxidation time, the value d can be adjusted by controlling the relative magnitudes of the aforementioned values x1 and x3 and the oxidation time 1 And d 2 The specific control and regulation of the size of the air gap DBR16 is relatively easy for a person skilled in the art, and will not be described in detail x3 Ga 1-x3 As material is oxidized As shown in fig. 4 b;
s3, depositing SiO on the first table top by PECVD 2 To be flush with the second table top, then at the second table top and SiO 2 The P-side electrode 30 is fabricated as shown in fig. 5; specific SiO 2 Methods for depositing and fabricating P-side electrode 30 are well known to those skilled in the art and will not be described in detail herein;
s4, selecting proper corrosive liquid (such as HCl solution) to enable Al to be formed x O y And Al x3 Ga 1-x3 As has high corrosion selectivity, and Al formed in the air gap DBR16 is etched by the existing wet etching process x O y Etching away to form an air gap structure and unoxidized Al x3 Ga 1-x3 As is used As a support column, specifically Al inside the air gap DBR16 x O y The result of the corrosion is shown in FIG. 6;
s5, thinning the conductive substrate 10, such as thinning the conductive substrate to 100 μm, and then sputtering an N-surface electrode 31 on the back surface of the conductive substrate 10 to form the VCSEL structure with the air gap DBR16, wherein the specific structure is shown in FIG. 1.
Compared with the prior art, the VCSEL structure with the air gap DBR and the preparation method thereof have the following beneficial effects: the air gap DBR structure of the application increases the refractive index difference of the materials with high and low refractive indexes of the DBR, can greatly reduce the number of DBR pairs under the condition of keeping the reflectivity of the DBR unchanged, further reduces the series resistance of the DBR and the absorption loss of light, and improves the inclined efficiency and the photoelectric conversion efficiency of the VCSEL structure.
Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present application and not for limiting the same, and although the present application has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present application, which is intended to be covered by the scope of the claims of the present application.

Claims (6)

1. The VCSEL structure with the air gap DBR is characterized by comprising a conductive substrate, wherein the back surface of the conductive substrate is provided with an N-face electrode, the surface of the conductive substrate is sequentially epitaxially grown with an N-type GaAs buffer layer, an N-type DBR and a quantum well active region from bottom to top, a region of the surface of the quantum well active region is epitaxially grown with a circular oxidation limiting layer, and the peripheral same layer of the circular oxidation limiting layer is provided with an aluminum oxidation product Al x O y A circular ring, a circular oxidation limiting layer and aluminum oxidation products Al x O y A planar circular P-type DBR is arranged on the surface of the aluminum oxide product Al x O y The surface of the quantum well active region which is arranged outside the same layer of the P-type DBR is provided with SiO 2 The filling layer is arranged on the surface of the P-type DBR, and the air gap DBR is arranged on the surface of the P-type DBR, and the SiO is arranged on the surface of the P-type DBR 2 The surface of the filling layer is provided with a P-face electrode which is electrically connected with the P-type DBR and matched with the air gap DBR; the air gap DBR consists of 10-12 pairs of lambda 0 Al of optical thickness/4 0.12 Ga 0.88 An As/air material and Al not oxidized x3 Ga 1-x3 As is used As a support column, i.e. the air gap DBR comprises multiple layers of Al with upper and lower structures 0.12 Ga 0.88 As high refractive index material, two layers of Al adjacent to each other up and down 0.12 Ga 0.88 Two unoxidized Al are arranged between As high refractive index materials x3 Ga 1-x3 As support columns, each layer of Al 0.12 Ga 0.88 The structure of the As high refractive index material is a dumbbell-shaped plane structure formed by butt joint of double fan-shaped structures with the same circle, and each Al x3 Ga 1-x3 The As support column is a sector column, and two layers of Al are adjacent from top to bottom 0.12 Ga 0.88 Two Al's between As high refractive index materials x3 Ga 1-x3 As support columns, opposite fan-shaped center vertexes and provided with an air gap distance d 2 The air gap spacing d 2 Greater than circular oxidation limitDiameter d of layer 1 The method comprises the steps of carrying out a first treatment on the surface of the Wherein lambda is 0 A typical value for x3 is 0.92, d is the lasing wavelength of the VCSEL 2 Is typically 7 μm; the P-plane electrode has two branches and Al in the air gap DBR 0.12 Ga 0.88 Thin waist matching in the middle of As dumbbell-shaped plane structure, wherein the Al 0.12 Ga 0.88 Thin waist width d in middle of As dumbbell-shaped plane structure 4 Preferably 8 μm.
2. The VCSEL structure with an air gap DBR of claim 1, wherein the circular oxide confinement layer is Al x1 Ga 1-x1 As, x1 has a typical value of 0.98, the thickness of the circular oxidation limiting layer is 30nm, the diameter d of the circular oxidation limiting layer 1 Is 5 μm.
3. The VCSEL structure with an air gap DBR of claim 1, wherein the P-type DBR consists of 3 pairs λ 0 Al of optical thickness/4 012 Ga 088 As/Al x2 Ga 1-x2 As material stack, a typical value for x2 is 0.8; wherein lambda is 0 Is the lasing wavelength of the VCSEL.
4. A VCSEL structure with an air gap DBR as claimed in claim 1, wherein the aluminium oxide product Al x O y The outer diameter of the circular ring and the diameter of the P-type DBR are d 3 And the diameter d 3 Preferably 25 μm.
5. A method of fabricating a VCSEL structure with an air gap DBR according to any one of claims 1 to 4, the method comprising the steps of:
s1, selecting an N-type GaAs conductive substrate, putting the N-type GaAs conductive substrate into red light MOCVD, and introducing H 2 And AsH 3 Removing water and oxide on the surface, and sequentially epitaxially growing an N-type GaAs buffer layer, an N-type DBR, an InGaAs/AlGaAs quantum well active region, a circular oxidation limiting layer, a P-type DBR and an air gap DBR on the surface of the conductive substrate from bottom to top;
s2, forming two table tops through twice photoetching and dry etching: the first table top from bottom to top is cylindrical and etched to the quantum well active region, the second table top is two sectors which are symmetrical left and right, and etched to the P-type DBR; placing the etched epitaxial wafer into an oxidation furnace, and introducing N 2 And steam, the temperature in the furnace is 420-430 ℃, alGaAs material with high Al component is oxidized into Al x O y The method comprises the steps of carrying out a first treatment on the surface of the By infrared CCD monitoring, oxide layer formation, al at air gap DBR x3 Ga 1-x3 As is oxidized and penetrated, and remains unoxidized Al x3 Ga 1- x3 As is used As a support column;
s3, depositing SiO on the first table top by PECVD 2 To be flush with the second table top, then at the second table top and SiO 2 Manufacturing a P-surface electrode;
s4, using wet etching to form Al in the air gap DBR x O y Etching away to form an air gap structure and unoxidized Al x3 Ga 1-x3 As is used As a support column;
s5, thinning the conductive substrate, sputtering an N-face electrode on the back face, and forming the VCSEL structure with the air gap DBR.
6. The method of fabricating a VCSEL structure with an air gap DBR according to claim 5, wherein in step S5, the conductive substrate is thinned to 100 μm.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306672B1 (en) * 1997-07-24 2001-10-23 Samsung Electronics Co., Ltd. Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same
CN1780004A (en) * 2005-10-19 2006-05-31 中国科学院上海微系统与信息技术研究所 Vertical cavity photoelectric device containing tunnel junction
CN101667716A (en) * 2008-09-03 2010-03-10 中国科学院半导体研究所 Double-sided bonding long-wavelength vertical cavity surface emitting laser and manufacturing method thereof
CN107093841A (en) * 2017-06-30 2017-08-25 张永 A kind of epitaxial structure of near-infrared VCSEL lasers and preparation method thereof
CN210640483U (en) * 2018-10-24 2020-05-29 中证博芯（重庆）半导体有限公司 VCSEL with novel DBR structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306672B1 (en) * 1997-07-24 2001-10-23 Samsung Electronics Co., Ltd. Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same
CN1780004A (en) * 2005-10-19 2006-05-31 中国科学院上海微系统与信息技术研究所 Vertical cavity photoelectric device containing tunnel junction
CN101667716A (en) * 2008-09-03 2010-03-10 中国科学院半导体研究所 Double-sided bonding long-wavelength vertical cavity surface emitting laser and manufacturing method thereof
CN107093841A (en) * 2017-06-30 2017-08-25 张永 A kind of epitaxial structure of near-infrared VCSEL lasers and preparation method thereof
CN210640483U (en) * 2018-10-24 2020-05-29 中证博芯（重庆）半导体有限公司 VCSEL with novel DBR structure

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