CN109103745A - A kind of vcsel structure and preparation method thereof with air-gap DBR - Google Patents
A kind of vcsel structure and preparation method thereof with air-gap DBR Download PDFInfo
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- CN109103745A CN109103745A CN201811245161.1A CN201811245161A CN109103745A CN 109103745 A CN109103745 A CN 109103745A CN 201811245161 A CN201811245161 A CN 201811245161A CN 109103745 A CN109103745 A CN 109103745A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention provides a kind of vcsel structure with air-gap DBR, the conductive substrates of the face N electrode are equipped with including the back side, successively growth has N-type GaAs buffer layer, N-type DBR and Quantum well active district from bottom to top on the surface of conductive substrates, one region growing of Quantum well active district surface has oxidation limiting layer, and the periphery same layer of oxidation limiting layer is equipped with aluminium oxidation product AlxOyAnnulus, oxidation limiting layer and aluminium oxidation product AlxOySurface be equipped with planar rondure p-type DBR, in aluminium oxidation product AlxOySiO is equipped with the Quantum well active district surface of p-type DBR same layer periphery2The surface of filled layer, p-type DBR is equipped with air-gap DBR, SiO2The surface of filled layer is equipped with p side electrode.The present invention also provides a kind of preparation methods of aforementioned vcsel structure, its air-gap DBR is by oxidation and etching process, the dbr structure of AlGaAs/air material is formed at light hole, and there are not oxidized and corrosion high Al contents AlGaAs backing material in two sides.The application increases the refringence of DBR material by using air-gap structure DBR.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of vcsel structure and its preparation with air-gap DBR
Method.
Background technique
Vertical cavity surface emitting laser (Vertical-Cavity Surface-Emitting Laser, VCSEL) is with it
It is low in energy consumption, be easy to that two dimension is integrated, circular light spot easily saves the advantages such as cost with fiber coupling, On-wafer measurement, be widely used in 3D
The fields such as sensing, laser printing, optic communication and optical storage.VCSEL generally comprises columnar resonator structure, including buffering
Layer, lower DBR (Distributed Bragg Reflection, distributed bragg reflector mirror), lower limit layer, quantum well radiation
Layer, upper limiting layer, upper DBR and ohmic contact layer.In order to reduce threshold current, current limit is formed using oxidation or H+implantation
Structure.Electrode is made respectively in ohmic contact layer and substrate back, and electric current is from electrode injection to Quantum well active district, electronics-sky
Cave is compounded in Quantum Well and shines, and reflects through upper and lower DBR, from the top-emission laser of resonator structure.Due to Quantum Well gain
Only 1% or so, therefore the reflectivity of upper and lower DBR is all 99% or more.In near infrared wavelength region, DBR generally uses high and low
The AlGaAs material of component.The reflectivity of DBR is related with the refringence of DBR material and DBR logarithm, and the series resistance of DBR
It is all directly proportional to DBR logarithm with the absorption to light.But the present inventor has found after study, in existing vcsel structure
The refringence of DBR high and low refractive index material is smaller.
Summary of the invention
For the smaller technical problem of the refringence of DBR high and low refractive index material in existing vcsel structure,
The present invention provides a kind of vcsel structure with air-gap DBR, by by the AlGaAs material air of high Al contents in DBR
Instead of increasing the refringence of DBR material, reducing DBR logarithm, and then reduce series resistance and the absorption to light.
In order to solve the above-mentioned technical problem, present invention employs the following technical solutions:
A kind of vcsel structure with air-gap DBR, including conductive substrates, the back side of the conductive substrates are equipped with the face N electricity
Pole, successively epitaxial growth has N-type GaAs buffer layer, N-type DBR and Quantum Well active from bottom to top on the surface of the conductive substrates
Area, the area epitaxy growth on the Quantum well active district surface have round oxidation limiting layer, the circle oxidation limiting layer
Periphery same layer is equipped with aluminium oxidation product AlxOyAnnulus, the circle oxidation limiting layer and aluminium oxidation product AlxOySurface be equipped with
The p-type DBR of planar rondure, in the aluminium oxidation product AlxOyIt is equipped with the Quantum well active district surface of p-type DBR same layer periphery
SiO2The surface of filled layer, the p-type DBR is equipped with air-gap DBR, the SiO2The surface of filled layer is equipped with and is electrically connected with p-type DBR
Connect and with the matched p side electrode of air-gap DBR.
Further, the round oxidation limiting layer is Alx1Ga1-x1The representative value of As, x1 are 0.98, the round oxidation limit
Preparative layer with a thickness of 30nm, the diameter d of the circle oxidation limiting layer1It is 5 μm.
Further, the p-type DBR is by 3 couples of λ0The Al of/4 optical thicknesses0.12Ga0.88As/Alx2Ga1-x2Structure is laminated in As material
At the representative value of the x2 is 0.8；Wherein, λ0For the excitation wavelength of VCSEL.
Further, the air-gap DBR is by 10~12 couples of λ0The Al of/4 optical thicknesses0.12Ga0.88As/air material is constituted,
And not oxidized Alx3Ga1-x3For As support column, i.e., the described air-gap DBR includes the multilayer Al of up-down structure0.12Ga0.88As
High-index material, two layers neighbouring of Al0.12Ga0.88It is not oxidized there are two being set between As high-index material
Alx3Ga1-x3As support column, each layer of Al0.12Ga0.88The structure of As high-index material is that double sector structures of same circle are docked
Made of dumbbell shape planar structure, each Alx3Ga1-x3As support column is a fan-shaped column, neighbouring two layers of Al0.12Ga0.88As
Two Al between high-index materialx3Ga1-x3As support column, fan shape center vertex is opposite and is free air-gap separation d2, described
Air-gap spacing d2Greater than the diameter d of round oxidation limiting layer1；Wherein, λ0For the excitation wavelength of VCSEL.
Further, the representative value of the x3 is 0.92, the d2Representative value be 7 μm.
Further, there are two Al in branch and air-gap DBR for the p side electrode tool0.12Ga0.88As dumbbell shape planar structure
Intermediate eel-like figure matching.
Further, the Al0.12Ga0.88Eel-like figure width d among As dumbbell shape planar structure4Preferably 8 μm.
Further, the aluminium oxidation product AlxOyThe outer diameter of annulus and the diameter of p-type DBR are d3, and the diameter d3
Preferably 25 μm.
The present invention also provides the preparation method that a kind of aforementioned strip has the vcsel structure of air-gap DBR, the method includes with
Lower step:
S1, one N-type GaAs conductive substrates of selection are put into feux rouges MOCVD, are passed through H2And AsH3Remove water and the oxidation on surface
Object, successively epitaxial growth N-type GaAs buffer layer, N-type DBR, InGaAs/AlGaAs quantum from bottom to top on conductive substrates surface
Trap active area, round oxidation limiting layer, p-type DBR and air-gap DBR；
S2, through Twi-lithography and dry etching, form two table tops: from bottom to top the first table top be cylindrical type, be etched to
Quantum well active district, the second table top are symmetrical two sectors, are etched to p-type DBR；The epitaxial wafer that etching is completed is put into
In oxidation furnace, it is passed through N2And vapor, in-furnace temperature are 420 DEG C -430 DEG C, the AlGaAs material of high Al contents is oxidized to
AlxOy；It is monitored by infrared CCD, oxide layer is formed, Al at air-gap DBRx3Ga1-x3As oxidation perforation, and there are unoxidized
Alx3Ga1-x3As is as support column；
S3, SiO is deposited in the first table top using PECVD2To being flushed with the second table top, then in the second table top and SiO2On
Make p side electrode；
S4, the Al that will be formed in air-gap DBR using wet etchingxOyIt erodes, forms air-gap structure, and not by oxygen
The Al of changex3Ga1-x3As is as support column；
S5, conductive substrates are thinned, overleaf sputter the face N electrode, form the vcsel structure for having air-gap DBR.
Further, in the step S5, conductive substrates are thinned to 100 μm.
Compared with prior art, the vcsel structure and preparation method thereof provided by the invention with air-gap DBR, has
Below the utility model has the advantages that increasing the refringence of DBR high and low refractive index material using the air-gap dbr structure in the application,
In the case where keeping DBR reflectivity constant, DBR logarithm can be greatly reduced, and then reduce the series resistance of DBR and to light
Absorption loss, improve the Slop efficiency and photoelectric conversion efficiency of vcsel structure.
Detailed description of the invention
Fig. 1 is the vcsel structure schematic diagram provided by the invention with air-gap DBR.
Fig. 2 a is the vcsel structure schematic top plan view provided by the invention with air-gap DBR.
Fig. 2 b is the vcsel structure diagrammatic cross-section provided by the invention with air-gap DBR.
Fig. 3 is the structural schematic diagram that the embodiment of the present invention utilizes MOCVD epitaxy to grow on conductive substrates.
Fig. 4 a is structural schematic diagram of the embodiment of the present invention after photoetching, dry etching.
Fig. 4 b is the oxidized structural schematic diagram of the embodiment of the present invention.
Fig. 5 is the embodiment of the present invention through SiO2Structural schematic diagram after planarization and production p side electrode.
Fig. 6 is that the embodiment of the present invention utilizes the air-gap dbr structure schematic diagram obtained after wet etching.
In figure, 10, conductive substrates；11, N-type GaAs buffer layer；12, N-type DBR；13, Quantum well active district；14, round oxygen
Change limiting layer；141, aluminium oxidation product AlxOy；15, p-type DBR；16, air-gap DBR；160,Al0.12Ga0.88As high refractive index material
Material；161,Alx3Ga1-x3As support column；162, air-gap；20,SiO2Filled layer；30, p side electrode；31, the face N electrode.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Conjunction is specifically illustrating, and the present invention is further explained.
In the description of the present invention, it is to be understood that, term " longitudinal direction ", " radial direction ", " length ", " width ", " thickness ",
The orientation of the instructions such as "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" or
Positional relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore not
It can be interpreted as limitation of the present invention.In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or two
More than.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
It please referring to shown in Fig. 1, Fig. 2 a and Fig. 2 b, the present invention provides a kind of vcsel structure with air-gap DBR, including
Conductive substrates 10, the back side of the conductive substrates 10 are equipped with the face N electrode 31, and the surface of the conductive substrates 10 is from bottom to top successively
Epitaxial growth has N-type GaAs buffer layer 11, N-type DBR12 and a Quantum well active district 13, and the one of 13 surface of Quantum well active district
Area epitaxy growth has round oxidation limiting layer 14, and the periphery same layer of the circle oxidation limiting layer 14 is equipped with aluminium oxidation product
AlxOy141 annulus, the circle oxidation limiting layer 14 and aluminium oxidation product AlxOy141 surface is equipped with the p-type of planar rondure
DBR15, in the aluminium oxidation product AlxOy141 and p-type DBR15 same layer periphery 13 surface of Quantum well active district be equipped with SiO2It fills out
Layer 20 is filled, i.e., the described SiO2The thickness of filled layer 20 is the sum of round oxidation limiting layer 14 and thickness of p-type DBR15, the p-type
The surface of DBR15 is equipped with air-gap DBR16, the SiO2The surface of filled layer 20 is equipped with and is electrically connected with p-type DBR15 and and air
The matched p side electrode 30 of gap DBR16.
As specific embodiment, the circle oxidation limiting layer 14 is Alx1Ga1-x1The representative value of As, x1 are 0.98, described
Round oxidation limiting layer 14 with a thickness of 30nm, the diameter d of the circle oxidation limiting layer 141It is 5 μm.Using institute in this implementation
The round oxidation limiting layer 14 stated reduces threshold current it is possible thereby to form the limitation of electric current and light field.
As specific embodiment, the p-type DBR15 is by 3 couples of λ0The Al of/4 optical thicknesses0.12Ga0.88As/Alx2Ga1-x2As
Material stacking is constituted, and the representative value of the x2 is 0.8；Wherein, λ0For the excitation wavelength of VCSEL.Using the P described in this implementation
Type DBR15, it is possible thereby to provide a part of reflectivity, and thus electric current imports active area.
As specific embodiment, the air-gap DBR16 is by 10~12 couples of λ0The Al of/4 optical thicknesses0.12Ga0.88As/air
Material is constituted, and not oxidized Alx3Ga1-x3For As support column, i.e., the described air-gap DBR16 includes the multilayer of up-down structure
Al0.12Ga0.88As high-index material 160, two layers neighbouring of Al0.12Ga0.88It is equipped between As high-index material 160
Two not oxidized Alx3Ga1-x3As support column 161, each layer of Al0.12Ga0.88The structure of As160 high-index material is same
Dumbbell shape planar structure made of double sector structures docking of one circle, each Alx3Ga1-x3As support column 161 is a fan-shaped column,
Neighbouring two layers of Al0.12Ga0.88Two Al between As160 high-index materialx3Ga1-x3As support column 161, fan shape center
Vertex is opposite and is free air-gap separation d2, i.e. two Alx3Ga1-x3It is opposite between As support column 161 to be formed with air-gap 162, institute
State air-gap spacing d2Greater than the diameter d of round oxidation limiting layer 141；Wherein, λ0For the excitation wavelength of VCSEL.Using this implementation
Described in air-gap DBR16, the DBR than usual high and low refractive index AlGaAs material reduces 8~10 pairs, it is possible thereby to subtract
Few light absorption, improves the electro-optical efficiency of device.
As specific embodiment, the representative value of the x3 is 0.92, the d2Representative value be 7 μm.
As specific embodiment, there are two Al in branch and air-gap DBR16 for the tool of p side electrode 300.12Ga0.88As160
Eel-like figure matching among dumbbell shape planar structure reduces contact resistance it is possible thereby to increase electrode contact surface product.
As specific embodiment, the Al0.12Ga0.88Eel-like figure width d among As160 dumbbell shape planar structure4Preferably
8μm。
As specific embodiment, the aluminium oxidation product AlxOyThe outer diameter of 141 annulus and the diameter of p-type DBR15 are d3,
And the diameter d3Preferably 25 μm.
The present invention also provides the preparation method that a kind of aforementioned strip has the vcsel structure of air-gap DBR, the method includes with
Lower step:
S1, selection one N-type GaAs conductive liner, 10 bottom are put into feux rouges MOCVD, are passed through H2And AsH3Remove the water and oxygen on surface
Then compound is passed through TMGa, TMAl, Si well known to those skilled in the art into chamber2H6, TMIn and CBr4Equal raw materials, are leading
Successively epitaxial growth N-type GaAs buffer layer 11, N-type DBR12, InGaAs/AlGaAs Quantum Well from bottom to top on electric substrate surface
Active area 13, round oxidation limiting layer 14, p-type DBR15 and air-gap DBR16, the structure after growth are as shown in Figure 3；Wherein, have
The epitaxial growth method of body has been known to the skilled person, and details are not described herein；
S2, through Twi-lithography and dry etching, form two table tops: from bottom to top the first table top be cylindrical type, be etched to
Quantum well active district 13, wherein aluminium oxidation product AlxOyThe outer diameter of 141 annulus and the diameter d of p-type DBR153It is 25 μm；Second
Face is symmetrical two sectors, is etched to p-type DBR15, wherein Al0.12Ga0.88Among As160 dumbbell shape planar structure
Eel-like figure width d4It is 8 μm；The epitaxial wafer that etching is completed is put into oxidation furnace, N is passed through2And vapor, in-furnace temperature be 420 DEG C-
430 DEG C, the AlGaAs material of high Al contents is oxidized to AlxOy；It is monitored by infrared CCD, oxide layer forms 5 μm of oxidation hole
Diameter is as light hole, Al at air-gap DBR16x3Ga1-x3As oxidation perforation, and there are unoxidized Alx3Ga1-x3As is as support
Column, specifically as shown in fig. 4 a；Since oxidation depth is related with Al component and oxidization time, it is possible to by controlling aforementioned value
The relative size of x1 and x3 and oxidization time adjust numerical value d1And d2Size, and specifically control to adjust for this field
Technical staff for be easier to realize, therefore repeat no more, Al inside specific air-gap DBR16x3Ga1-x3As material
Situation is oxidized to please refer to shown in Fig. 4 b；
S3, SiO is deposited in the first table top using PECVD2To being flushed with the second table top, then in the second table top and SiO2On
P side electrode 30 is made, as shown in Figure 5；Specific SiO2Deposition and 30 production method of p side electrode have been that those skilled in the art are ripe
The prior art known, details are not described herein；
S4, the suitable corrosive liquid (such as HCl solution) of selection make AlxOyAnd Alx3Ga1-x3As etch selectivities with higher,
The Al that will be formed in air-gap DBR16 using existing wet corrosion techniquexOyIt erodes, forms air-gap structure, and not by oxygen
The Al of changex3Ga1-x3As is as support column, the specific inside the air-gap DBR16 AlxOyThe result being corroded please refers to Fig. 6 institute
Show；
S5, conductive substrates 10 are thinned, conductive substrates is such as thinned to 100 μm, then splashed at the back side of conductive substrates 10
The face N electrode 31 is penetrated, the vcsel structure for having air-gap DBR16 is formed, specific structure please refers to shown in Fig. 1.
Compared with prior art, the vcsel structure and preparation method thereof provided by the invention with air-gap DBR, has
Below the utility model has the advantages that increasing the refringence of DBR high and low refractive index material using the air-gap dbr structure in the application,
In the case where keeping DBR reflectivity constant, DBR logarithm can be greatly reduced, and then reduce the series resistance of DBR and to light
Absorption loss, improve the Slop efficiency and photoelectric conversion efficiency of vcsel structure.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with
Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of technical solution of the present invention, should all be covered at this
In the scope of the claims of invention.
Claims (10)
1. a kind of vcsel structure with air-gap DBR, which is characterized in that including conductive substrates, the back side of the conductive substrates
Equipped with the face N electrode, successively epitaxial growth has N-type GaAs buffer layer, N-type DBR and amount from bottom to top on the surface of the conductive substrates
Sub- trap active area, the area epitaxy growth on the Quantum well active district surface have round oxidation limiting layer, the round oxidation
The periphery same layer of limiting layer is equipped with aluminium oxidation product AlxOyAnnulus, the circle oxidation limiting layer and aluminium oxidation product AlxOy's
Surface is equipped with the p-type DBR of planar rondure, in the aluminium oxidation product AlxOyWith the Quantum well active district table of p-type DBR same layer periphery
Face is equipped with SiO2The surface of filled layer, the p-type DBR is equipped with air-gap DBR, the SiO2The surface of filled layer is equipped with and p-type
DBR electrical connection and with the matched p side electrode of air-gap DBR.
2. the vcsel structure according to claim 1 with air-gap DBR, which is characterized in that the round oxidation limitation
Layer is Alx1Ga1-x1The representative value of As, x1 are 0.98, the circle oxidation limiting layer with a thickness of 30nm, the round oxidation limit
The diameter d of preparative layer1It is 5 μm.
3. the vcsel structure according to claim 1 with air-gap DBR, which is characterized in that the p-type DBR is by 3 pairs
λ0The Al of/4 optical thicknesses0.12Ga0.88As/Alx2Ga1-x2The stacking of As material is constituted, and the representative value of the x2 is 0.8；Wherein, λ0
For the excitation wavelength of VCSEL.
4. the vcsel structure according to claim 1 with air-gap DBR, which is characterized in that the air-gap DBR by
10~12 couples of λ0The Al of/4 optical thicknesses0.12Ga0.88As/air material is constituted, and not oxidized Alx3Ga1-x3As is as support
Column, i.e., the described air-gap DBR include the multilayer Al of up-down structure0.12Ga0.88As high-index material, neighbouring two layers
Al0.12Ga0.88Not oxidized Al there are two being set between As high-index materialx3Ga1-x3As support column, each layer
Al0.12Ga0.88The structure of As high-index material is dumbbell shape planar structure made of double sector structures docking of same circle, often
One Alx3Ga1-x3As support column is a fan-shaped column, neighbouring two layers of Al0.12Ga0.88Two between As high-index material
Alx3Ga1-x3As support column, fan shape center vertex is opposite and is free air-gap separation d2, the air-gap spacing d2It is aoxidized greater than circle
The diameter d of limiting layer1；Wherein, λ0For the excitation wavelength of VCSEL.
5. the vcsel structure according to claim 4 with air-gap DBR, which is characterized in that the representative value of the x3 is
0.92, the d2Representative value be 7 μm.
6. the vcsel structure according to claim 4 with air-gap DBR, which is characterized in that the p side electrode has
Liang Ge branch and Al in air-gap DBR0.12Ga0.88Eel-like figure matching among As dumbbell shape planar structure.
7. the vcsel structure according to claim 4 with air-gap DBR, which is characterized in that the Al0.12Ga0.88As
Eel-like figure width d among dumbbell shape planar structure4Preferably 8 μm.
8. the vcsel structure according to claim 1 with air-gap DBR, which is characterized in that the aluminium oxidation product
AlxOyThe outer diameter of annulus and the diameter of p-type DBR are d3, and the diameter d3Preferably 25 μm.
9. a kind of preparation method of the vcsel structure according to claim 1 to 8 with air-gap DBR,
It is characterized in that, the described method comprises the following steps:
S1, one N-type GaAs conductive substrates of selection are put into feux rouges MOCVD, are passed through H2And AsH3The water and oxide on surface are removed,
Successively epitaxial growth N-type GaAs buffer layer, N-type DBR, InGaAs/AlGaAs Quantum Well from bottom to top on conductive substrates surface
Active area, round oxidation limiting layer, p-type DBR and air-gap DBR；
S2, through Twi-lithography and dry etching, form two table tops: from bottom to top the first table top be cylindrical type, be etched to quantum
Trap active area, the second table top are symmetrical two sectors, are etched to p-type DBR；The epitaxial wafer that etching is completed is put into oxidation
In furnace, it is passed through N2And vapor, in-furnace temperature are 420 DEG C -430 DEG C, the AlGaAs material of high Al contents is oxidized to AlxOy；It is logical
Infrared CCD monitoring is crossed, oxide layer is formed, Al at air-gap DBRx3Ga1-x3As oxidation perforation, and there are unoxidized Alx3Ga1- x3As is as support column；
S3, SiO is deposited in the first table top using PECVD2To being flushed with the second table top, then in the second table top and SiO2Upper production P
Face electrode；
S4, the Al that will be formed in air-gap DBR using wet etchingxOyIt erodes, forms air-gap structure, and not oxidized
Alx3Ga1-x3As is as support column；
S5, conductive substrates are thinned, overleaf sputter the face N electrode, form the vcsel structure for having air-gap DBR.
10. the preparation method of the vcsel structure according to claim 9 with air-gap DBR, which is characterized in that described
In step S5, conductive substrates are thinned to 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811245161.1A CN109103745B (en) | 2018-10-24 | 2018-10-24 | VCSEL structure with air gap DBR and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811245161.1A CN109103745B (en) | 2018-10-24 | 2018-10-24 | VCSEL structure with air gap DBR and preparation method thereof |
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| CN111193186A (en) * | 2020-02-28 | 2020-05-22 | 太平洋（聊城）光电科技有限公司 | Vertical cavity surface emitting laser and method of manufacturing the same |
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