CN112260062A - Vertical cavity surface emitting laser and preparation method thereof - Google Patents
Vertical cavity surface emitting laser and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 84
- 238000002310 reflectometry Methods 0.000 claims description 82
- 238000003780 insertion Methods 0.000 claims description 32
- 230000037431 insertion Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 230000008901 benefit Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 148
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 11
- 238000000407 epitaxy Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a vertical cavity surface emitting laser and a preparation method thereof. Wherein, the vertical cavity surface emitting laser includes: the device comprises an N-type substrate, an N-type Bragg reflector, a multiple quantum well layer, an x pair of first P-type Bragg reflectors, a current limiting layer, an N pair of second P-type Bragg reflectors and electrodes. The vertical cavity surface emitting laser has the advantages of strong reliability, high luminous efficiency and lower preparation cost.
Description
Technical Field
The invention relates to the field of semiconductor power devices, in particular to a vertical cavity surface emitting laser and a preparation method thereof.
Background
Currently, Vertical Cavity Surface Emitting Lasers (VCSELs) have high reliability requirements. The main method for improving the reliability of the VCSEL at present is to prepare Al by epitaxially growing a plurality of layers of high-aluminum materials, etching a cross section on a VCSEL chip by PECVD (plasma enhanced chemical vapor deposition), and preparing the Al by a wet oxidation process2O3As a current blocking layer. Al (Al)2O3The VCSEL is an amorphous structure, and stress and thermal expansion coefficient are different from those of peripheral materials, so that peripheral defects are introduced, the reliability of a chip is reduced, and the VCSEL is one of failure sources of the VCSEL. In addition, the oxidation process has many problems, such as the need for first-part oxidation to obtain the oxidation rate, process repeatability, process control of the oxidation rate, accuracy of the oxidation pore diameter, and the like, and the process has poor repeatability and high cost.
Thus, the conventional vertical cavity surface emitting laser and the method for manufacturing the same still need to be improved.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. To this end, an object of the present invention is to provide a vertical cavity surface emitting laser and a method of manufacturing the same. The vertical cavity surface emitting laser has the advantages of strong reliability, high luminous efficiency and lower preparation cost.
In a first aspect of the invention, a vertical cavity surface emitting laser is presented. According to an embodiment of the present invention, the vertical cavity surface emitting laser includes: an N-type substrate; the N-type Bragg reflector is formed on at least part of the surface of the N-type substrate; the multiple quantum well layer is formed on at least part of the surface of the N-type Bragg reflector far away from the N-type substrate; x pairs of first P-type Bragg reflectors formed on the multiple quantum well layer away from the multiple quantum well layerAt least part of the surface of the N-type Bragg reflector; wherein each pair of first P-type Bragg reflectors comprises a high-reflectivity AlGaAs layer and a low-reflectivity AlGaAs layer, and in the x pairs of first P-type Bragg reflectors, the high-reflectivity AlGaAs layer and the low-reflectivity AlGaAs layer are arranged at intervals; a current confinement layer formed on at least a portion of a surface of the x pairs of first P-type bragg mirrors remote from the multiple quantum well layer and exposing a surface of the portion of the first P-type bragg mirrors; the current limiting layer is made of SiO2、Si3N4At least one of (a); n pairs of second P-type bragg mirrors formed on a surface of a portion of the first P-type bragg mirror exposed by the current confinement layer; wherein each pair of the second P-type bragg reflectors comprises a high reflectivity AlGaAs layer and a low reflectivity AlGaAs layer, and in the n pairs of the second P-type bragg reflectors, the high reflectivity AlGaAs layer and the low reflectivity AlGaAs layer are arranged at intervals; an electrode disposed on the second P-type Bragg reflector; wherein n is a positive integer, and x is an integer greater than or equal to zero and less than n.
In addition, the vertical cavity surface emitting laser according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the present invention, the thickness of the single-layer high-reflectivity AlGaAs layer and the thickness of the single-layer low-reflectivity AlGaAs layer are both 1/4a λ, where a is the reflectivity of the vcsel and λ is the wavelength of the vcsel.
In some embodiments of the present invention, the vertical cavity surface emitting laser further comprises: an insertion layer including a low reflectance AlGaAs layer and a GaAs layer; the insertion layer is arranged between two adjacent pairs of second P-type Bragg reflectors, the low-reflectivity AlGaAs layer in the insertion layer is connected with the high-reflectivity AlGaAs layer in the second P-type Bragg reflectors, and the GaAs layer in the insertion layer is connected with the low-reflectivity AlGaAs layer in the second P-type Bragg reflectors.
In a second aspect of the present invention, the present invention proposes a method of manufacturing the vertical cavity surface emitting laser of the above-described embodiment. According to an embodiment of the invention, the method comprises: providing an N-type substrate, and sequentially forming an N-type Bragg reflector, a multiple quantum well layer, an x-pair first P-type Bragg reflector and a current limiting layer on the N-type substrate; etching the current confinement layer and a portion of the first P-type bragg mirror to expose a portion of a surface of the first P-type bragg mirror; forming n pairs of second P-type bragg mirrors on the surfaces of the exposed portions of the first P-type bragg mirrors of the current confinement layer; and an electrode is arranged on the second P-type Bragg reflector.
In addition, the method for manufacturing the vertical cavity surface emitting laser according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the invention, the method further comprises: in the process of forming n pairs of second P-type bragg mirrors, an insertion layer is formed between two adjacent pairs of the second P-type bragg mirrors.
In a third aspect of the invention, a vertical cavity surface emitting laser is presented. According to an embodiment of the present invention, the vertical cavity surface emitting laser includes: an N-type substrate; the N-type Bragg reflector is formed on at least part of the surface of the N-type substrate; the multiple quantum well layer is formed on at least part of the surface of the N-type Bragg reflector far away from the N-type substrate; x pairs of first P-type Bragg reflectors, wherein the x pairs of first P-type Bragg reflectors are formed on at least part of the surface of the multiple quantum well layer far away from the N-type Bragg reflector; wherein each pair of first P-type Bragg reflectors comprises a high-reflectivity AlGaAs layer and a low-reflectivity AlGaAs layer, and in the x pairs of first P-type Bragg reflectors, the high-reflectivity AlGaAs layer and the low-reflectivity AlGaAs layer are arranged at intervals; a current confinement layer formed on at least a part of the surface of the x pair of first P-type Bragg reflectors far away from the multiple quantum well layerExposing a surface of the portion of the first P-type Bragg reflector; the current limiting layer is made of SiO2、Si3N4At least one of (a); n pairs of second P-type bragg mirrors formed on the current confinement layer and a portion of the surface of the first P-type bragg mirror exposed by the current confinement layer; wherein each pair of the second P-type bragg reflectors comprises a high reflectivity AlGaAs layer and a low reflectivity AlGaAs layer, and in the n pairs of the second P-type bragg reflectors, the high reflectivity AlGaAs layer and the low reflectivity AlGaAs layer are arranged at intervals; an electrode disposed on the second P-type Bragg reflector; wherein n is a positive integer, and x is an integer greater than or equal to zero and less than n.
In addition, the vertical cavity surface emitting laser according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the present invention, the thickness of the single-layer high-reflectivity AlGaAs layer and the thickness of the single-layer low-reflectivity AlGaAs layer are both 1/4a λ, where a is the reflectivity of the vcsel and λ is the wavelength of the vcsel.
In some embodiments of the present invention, the vertical cavity surface emitting laser further comprises: an insertion layer including a low reflectance AlGaAs layer and a GaAs layer; the insertion layer is arranged between two adjacent pairs of second P-type Bragg reflectors, the low-reflectivity AlGaAs layer in the insertion layer is connected with the high-reflectivity AlGaAs layer in the second P-type Bragg reflectors, and the GaAs layer in the insertion layer is connected with the low-reflectivity AlGaAs layer in the second P-type Bragg reflectors.
In a fourth aspect of the present invention, the present invention proposes a method of manufacturing the vertical cavity surface emitting laser of the above-described embodiment. According to an embodiment of the invention, the method comprises: providing an N-type substrate, and sequentially forming an N-type Bragg reflector, a multiple quantum well layer, a first P-type Bragg reflector and a current limiting layer on the N-type substrate; etching the current confinement layer and a portion of the first P-type bragg mirror to expose a portion of a surface of the first P-type bragg mirror; forming a first P-type bragg mirror on a surface of a portion of the first P-type bragg mirror exposed by the current confinement layer; forming n pairs of second P-type bragg mirrors on the current confinement layer and a surface of a portion of the first P-type bragg mirror exposed by the current confinement layer; and an electrode is arranged on the second P-type Bragg reflector.
In addition, the method for manufacturing the vertical cavity surface emitting laser according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the invention, the method further comprises: in the process of forming n pairs of second P-type bragg mirrors, an insertion layer is formed between two adjacent pairs of the second P-type bragg mirrors.
In a fifth aspect of the present invention, the present invention provides a vertical cavity surface emitting laser. According to an embodiment of the present invention, the vertical cavity surface emitting laser includes: an N-type substrate; the N-type Bragg reflector is formed on at least part of the surface of the N-type substrate; the multiple quantum well layer is formed on at least part of the surface of the N-type Bragg reflector far away from the N-type substrate; x pairs of first P-type Bragg reflectors, wherein the x pairs of first P-type Bragg reflectors are formed on at least part of the surface of the multiple quantum well layer far away from the N-type Bragg reflector; wherein each pair of first P-type Bragg reflectors comprises a high-reflectivity AlGaAs layer and a low-reflectivity AlGaAs layer, and in the x pairs of first P-type Bragg reflectors, the high-reflectivity AlGaAs layer and the low-reflectivity AlGaAs layer are arranged at intervals; a current confinement layer formed on at least a portion of a surface of the x pairs of first P-type bragg mirrors remote from the multiple quantum well layer and exposing a surface of the portion of the first P-type bragg mirrors; the current limiting layer is made of SiO2、Si3N4At least one of (a); n pairs of second P-type Bragg reflectors formed at the current limitA cladding layer and a surface of a portion of the first P-type Bragg reflector exposed by the current confinement layer; wherein each pair of the second P-type bragg reflectors comprises a high reflectivity AlGaAs layer and a low reflectivity AlGaAs layer, and in the n pairs of the second P-type bragg reflectors, the high reflectivity AlGaAs layer and the low reflectivity AlGaAs layer are arranged at intervals; the P-type substrate is formed on at least part of the surface of the n pairs of second P-type Bragg reflectors far away from the current limiting layer; an electrode disposed on the P-type substrate; wherein n is a positive integer, and x is an integer greater than or equal to zero and less than n.
In addition, the vertical cavity surface emitting laser according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the present invention, the thickness of the single-layer high-reflectivity AlGaAs layer and the thickness of the single-layer low-reflectivity AlGaAs layer are both 1/4a λ, where a is the reflectivity of the vcsel and λ is the wavelength of the vcsel.
In some embodiments of the present invention, the vertical cavity surface emitting laser further comprises: an insertion layer including a low reflectance AlGaAs layer and a GaAs layer; the insertion layer is arranged between two adjacent pairs of second P-type Bragg reflectors, the low-reflectivity AlGaAs layer in the insertion layer is connected with the high-reflectivity AlGaAs layer in the second P-type Bragg reflectors, and the GaAs layer in the insertion layer is connected with the low-reflectivity AlGaAs layer in the second P-type Bragg reflectors.
In a sixth aspect of the present invention, the present invention proposes a method of manufacturing the vertical cavity surface emitting laser of the above-described embodiment. According to an embodiment of the invention, the method comprises: providing an N-type substrate, and sequentially forming an N-type Bragg reflector, a multiple quantum well layer, a first P-type Bragg reflector and a current limiting layer on the N-type substrate; etching the current confinement layer and a portion of the first P-type bragg mirror to expose a portion of a surface of the first P-type bragg mirror; forming a first P-type bragg mirror on a surface of a portion of the first P-type bragg mirror exposed by the current confinement layer; providing a P-type substrate, and forming n pairs of second P-type Bragg reflectors on the P-type substrate; combining the n pairs of second P-type Bragg reflectors with the first P-type Bragg reflector; an electrode is provided on the P-type substrate.
In addition, the method for manufacturing the vertical cavity surface emitting laser according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the invention, the method further comprises: in the process of forming n pairs of second P-type bragg mirrors, an insertion layer is formed between two adjacent pairs of the second P-type bragg mirrors.
The vertical cavity surface emitting laser according to the above-described embodiment of the present invention may have at least one advantage selected from the following:
(1) the vertical cavity surface emitting laser adopts a novel current limiting layer and secondary epitaxy, and can block current under the condition of not damaging the integrity of crystals, thereby solving the problems of reduced chip performance, shortened service life and poor reliability caused by the fact that defects are easily introduced due to stress change and thermal expansion coefficient change after the high aluminum material is oxidized.
(2) The vertical cavity surface emitting laser avoids the defect problem caused by an oxidation structure by optimizing an epitaxial structure, enhances the control on the oxidation layer, effectively controls electric parameters such as current and the like, weakens the transverse diffusion of the current, limits the transverse current, reduces the threshold current of the vertical cavity surface emitting laser, and improves the luminous efficiency of a device.
(2) The structure design of the vertical cavity surface emitting laser relieves the transverse potential difference of the P-type hole injection layer, weakens the injection of transverse carriers and improves the transverse limitation.
(3) The preparation method of the vertical cavity surface emitting laser has strong repeatability, and the manufacturing cost can be effectively controlled.
In addition, it should be noted that all the features and advantages described above for the vcsel are also applicable to the method for manufacturing the vcsel, and are not described herein again.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic structural view of a vertical cavity surface emitting laser in embodiment 1;
FIG. 2 is a schematic structural view of a vertical cavity surface emitting laser in embodiment 1;
FIG. 3 is a schematic structural view of a vertical cavity surface emitting laser in embodiment 2;
FIG. 4 is a schematic structural view of a vertical cavity surface emitting laser in embodiment 2;
FIG. 5 is a schematic structural view of a vertical cavity surface emitting laser in embodiment 3;
fig. 6 is a schematic structural view of a vertical cavity surface emitting laser in embodiment 3.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
In the present invention, n is a positive integer, and may be, for example, 1, 2, 3, 4, 5, 6, 7, 8, 100, 1000, or the like; a is the reflectivity of the vertical cavity surface emitting laser; λ is the wavelength of the vertical cavity surface emitting laser; the value range of lambda can be 600-1000 nm, such as 600nm, 700nm, 800nm, 850nm, 900nm, 1000nm and the like, and the value range of a can be determined according to lambda, for example, when lambda is 850nm, the value range of a can be 3-3.6. In the present invention, specific kinds of the high-reflectance AlGaAs layer and the low-reflectance AlGaAs layer are not particularly limited, and for example, the high-reflectance AlGaAs layer may be an Al12 layer and the low-reflectance AlGaAs layer may be an Al90 layer.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include at least one of the feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
The invention will now be described with reference to specific examples, which are intended to be illustrative only and not to be limiting in any way.
EXAMPLE 1 inverted T-shaped VCSEL
The structure of the VCSEL is shown in fig. 1 and 2. In FIG. 1, 1-1: n-type GaAs substrate layer, 1-2: n-type bragg reflector (NDBR), 1-3: multilayer quantum well layer (MQW), 1-4: x is to the P type Bragg reflector (PDBR, x is more than or equal to 0 and less than n), 1-5: current confinement layer, 1-6: n pairs of P-type bragg mirrors (PDBRs), 1-7: and a positive electrode.
The preparation flow of the VCSEL is as follows:
(1) primary epitaxy: through an epitaxial metal organic vapor deposition technology, NDBR is grown on an N-type substrate, then MQW is grown on the NDBR, and x pairs of PDBR (x is more than or equal to 0 and less than N) are grown on the MQW;
(2) forming a current confinement layer: a current limiting layer is manufactured on the MQW to play a role in current blocking;
(3) PECVD etching: adopting a PECVD etching process in the middle of the current limiting layer structure and the PDBR, wherein the etching thickness is d (d1< d < d 2);
(4) secondary epitaxy: and (4) carrying out secondary epitaxial vertical growth on n pairs of PDBRs in the current limiting layer etching region, and manufacturing electrodes at the n pairs of PDBRs to form the VCSEL.
As shown in fig. 2, a layer of Al12 (low composition Al) plus a layer of Al90 (high composition Al) can form a pair of PDBRs. In step (1), x pairs of DBRs (0 ≦ x < n) are grown on the MQW, and since the thickness of the single Al12 is d ═ 1/4a λ, and the thickness of the single Al90 is also d ═ 1/4a λ, for the convenience of PECVD etching, the thickness of the pair of PDBRs may be made d ═ 1/2 a λ, and the thickness of the x pairs of DBRs is x (1/2) a λ. N pairs of PDBRs were grown on x pairs of PDBRs, with a total thickness of n x (1/2) a λ. One of the Al12 layers is replaced with a GaAs layer (i.e., a pair of PDBRs as an insertion layer) in order to enhance reflectivity.
Example 2 Positive T-type VCSEL
The structure of the VCSEL is shown in fig. 3 and 4. In FIG. 3, 2-1: n-type GaAs substrate layer, 2-2: n-type bragg reflector (NDBR), 2-3: multilayer quantum well layer (MQW), 2-4: x is relative to the P type Bragg reflector (PDBR, x is more than or equal to 0 and is less than n), 2-5: current confinement layer, 2-6: n pair of P-type bragg mirrors (PDBR), 2-7: and a positive electrode.
The preparation flow of the VCSEL is as follows:
(1) primary epitaxy: through an epitaxial metal organic vapor deposition technology, NDBR is grown on an N-type substrate, MQW is grown on the NDBR, and x-to-PDBR (x is more than or equal to 0 and less than N) is grown on the MQW.
(2) Forming a current confinement layer: by fabricating a current confinement layer on the MQW, a more stable current blocking effect is achieved without introducing more defects.
(3) PECVD etching: and a PECVD etching process is adopted in the middle of the current limiting layer structure and the PDBR, and the etching thickness is d (d1< d < d2).
(4) Secondary epitaxy: controlling airflow in the current limiting layer etching region to vertically grow PDBR until the PDBR is flush with the upper surface of the current limiting layer, then continuously growing n pairs of PDBR on the current limiting layer and the formed PDBR, and manufacturing electrodes at the n pairs of PDBR to form the VCSEL.
As shown in fig. 4, a layer of Al12 (low composition Al) plus a layer of Al90 (high composition Al) can form a pair of PDBRs. In step (1), x pairs of DBRs (0 ≦ x < n) are grown on the MQW, and since the thickness of the single Al12 is d ═ 1/4a λ, and the thickness of the single Al90 is also d ═ 1/4a λ, for the convenience of PECVD etching, the thickness of the pair of PDBRs may be made d ═ 1/2 a λ, and the thickness of the x pairs of DBRs is x (1/2) a λ. N pairs of PDBRs were grown on x pairs of PDBRs, with a total thickness of n x (1/2) a λ. One of the Al12 layers is replaced with a GaAs layer (i.e., a pair of PDBRs as an insertion layer) in order to enhance reflectivity.
Example 3 Combined T-type VCSEL
The structure of the VCSEL is shown in fig. 5 and 6. In FIG. 5, 3-1: n-type GaAs substrate layer, 3-2: n-type bragg reflector (NDBR), 3-3: multilayer quantum well layer (MQW), 3-4: p type Bragg reflector (PDBR, x is more than or equal to 0 and less than n), 3-5: current confinement layer, 6: double-epitaxy PDBR, 3-7: n pairs of PDBR, 3-8: p-type substrate, 3-9: and a positive electrode.
The preparation flow of the VCSEL is as follows:
(1) primary epitaxy: through an epitaxial metal organic vapor deposition technology, NDBR is grown on an N-type substrate, MQW is grown on the NDBR, and x-to-PDBR (x is more than or equal to 0 and less than N) is grown on the MQW.
(2) Forming a current confinement layer: by manufacturing a current limiting layer on the MQW, the introduction of defects is reduced, the integrity of crystals is maintained, and the current blocking effect is achieved.
(3) PECVD etching: and a PECVD etching process is adopted in the middle of the current limiting layer structure and the PDBR, and the etching thickness is d (d1< d < d2).
(4) Secondary epitaxy: and controlling the airflow in the current limiting layer etching area to vertically grow PDBR until the PDBR is flush with the upper surface of the current limiting layer.
As shown in fig. 6, a layer of Al12 (low composition Al) plus a layer of Al90 (high composition Al) can form a pair of PDBRs. In step (1), x pairs of DBRs (0 ≦ x < n) are grown on the MQW, and since the thickness of the single Al12 is d ═ 1/4a λ, and the thickness of the single Al90 is also d ═ 1/4a λ, for the convenience of PECVD etching, the thickness of the pair of PDBRs may be made d ═ 1/2 a λ, and the thickness of the x pairs of DBRs is x (1/2) a λ.
(5) Growing n pairs of PDBR on a P type substrate: and growing n pairs of PDBRs with required thickness on the P type substrate, wherein the total thickness of the growth is n x (1/2) a lambda. To enhance the reflectivity, one of the Al12 layers was replaced with a GaAs layer (i.e., a pair of PDBRs as an intervening layer) and the positive electrode was fabricated on a P-type substrate.
(6) And (3) epitaxial bonding process: the PDBR grown on the P-type substrate is combined with NDBR, MQW, PDBR and current confining layers grown on the N-type substrate using bonding (bonding) techniques to form a complete VCSEL.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A vertical cavity surface emitting laser, comprising:
an N-type substrate;
the N-type Bragg reflector is formed on at least part of the surface of the N-type substrate;
the multiple quantum well layer is formed on at least part of the surface of the N-type Bragg reflector far away from the N-type substrate;
x pairs of first P-type Bragg reflectors, wherein the x pairs of first P-type Bragg reflectors are formed on at least part of the surface of the multiple quantum well layer far away from the N-type Bragg reflector; wherein each pair of first P-type Bragg reflectors comprises a high-reflectivity AlGaAs layer and a low-reflectivity AlGaAs layer, and in the x pairs of first P-type Bragg reflectors, the high-reflectivity AlGaAs layer and the low-reflectivity AlGaAs layer are arranged at intervals;
a current confinement layer formed on at least a portion of a surface of the x pairs of first P-type bragg mirrors remote from the multiple quantum well layer and exposing a surface of the portion of the first P-type bragg mirrors; the current limiting layer is made of SiO2、Si3N4At least one of (a);
n pairs of second P-type bragg mirrors formed on a surface of a portion of the first P-type bragg mirror exposed by the current confinement layer; wherein each pair of the second P-type bragg reflectors comprises a high reflectivity AlGaAs layer and a low reflectivity AlGaAs layer, and in the n pairs of the second P-type bragg reflectors, the high reflectivity AlGaAs layer and the low reflectivity AlGaAs layer are arranged at intervals;
an electrode disposed on the second P-type Bragg reflector;
wherein n is a positive integer, and x is an integer greater than or equal to zero and less than n.
2. A vcsel according to claim 1, wherein the thickness of said single high reflectivity AlGaAs layer and the thickness of said single low reflectivity AlGaAs layer are both 1/4 λ, where a is the reflectivity of said vcsel and λ is the wavelength of said vcsel.
3. A vertical cavity surface emitting laser according to claim 1, further comprising: an insertion layer including a low reflectance AlGaAs layer and a GaAs layer; the insertion layer is arranged between two adjacent pairs of second P-type Bragg reflectors, the low-reflectivity AlGaAs layer in the insertion layer is connected with the high-reflectivity AlGaAs layer in the second P-type Bragg reflectors, and the GaAs layer in the insertion layer is connected with the low-reflectivity AlGaAs layer in the second P-type Bragg reflectors.
4. A method of manufacturing a vertical cavity surface emitting laser according to any one of claims 1 to 3, comprising:
providing an N-type substrate, and sequentially forming an N-type Bragg reflector, a multiple quantum well layer, an x-pair first P-type Bragg reflector and a current limiting layer on the N-type substrate;
etching the current confinement layer and a portion of the first P-type bragg mirror to expose a portion of a surface of the first P-type bragg mirror;
forming n pairs of second P-type bragg mirrors on the surfaces of the exposed portions of the first P-type bragg mirrors of the current confinement layer;
an electrode is arranged on the second P-type Bragg reflector;
optionally, the method further comprises: in the process of forming n pairs of second P-type bragg mirrors, an insertion layer is formed between two adjacent pairs of the second P-type bragg mirrors.
5. A vertical cavity surface emitting laser, comprising:
an N-type substrate;
the N-type Bragg reflector is formed on at least part of the surface of the N-type substrate;
the multiple quantum well layer is formed on at least part of the surface of the N-type Bragg reflector far away from the N-type substrate;
x pairs of first P-type Bragg reflectors, wherein the x pairs of first P-type Bragg reflectors are formed on at least part of the surface of the multiple quantum well layer far away from the N-type Bragg reflector; wherein each pair of first P-type Bragg reflectors comprises a high-reflectivity AlGaAs layer and a low-reflectivity AlGaAs layer, and in the x pairs of first P-type Bragg reflectors, the high-reflectivity AlGaAs layer and the low-reflectivity AlGaAs layer are arranged at intervals;
a current confinement layer formed on at least a portion of the surface of the x pair of first P-type Bragg reflectors away from the multiple quantum well layer and exposing the portion of the first P-type Bragg reflectorA surface of a P-type Bragg reflector; the current limiting layer is made of SiO2、Si3N4At least one of (a);
n pairs of second P-type bragg mirrors formed on the current confinement layer and a portion of the surface of the first P-type bragg mirror exposed by the current confinement layer; wherein each pair of the second P-type bragg reflectors comprises a high reflectivity AlGaAs layer and a low reflectivity AlGaAs layer, and in the n pairs of the second P-type bragg reflectors, the high reflectivity AlGaAs layer and the low reflectivity AlGaAs layer are arranged at intervals;
an electrode disposed on the second P-type Bragg reflector;
wherein n is a positive integer, and x is an integer greater than or equal to zero and less than n.
6. A vertical cavity surface emitting laser according to claim 5, further comprising: an insertion layer including a low reflectance AlGaAs layer and a GaAs layer; the insertion layer is arranged between two adjacent pairs of second P-type Bragg reflectors, the low-reflectivity AlGaAs layer in the insertion layer is connected with the high-reflectivity AlGaAs layer in the second P-type Bragg reflectors, and the GaAs layer in the insertion layer is connected with the low-reflectivity AlGaAs layer in the second P-type Bragg reflectors.
7. A method of manufacturing a vertical cavity surface emitting laser according to claim 5 or 6, comprising:
providing an N-type substrate, and sequentially forming an N-type Bragg reflector, a multiple quantum well layer, a first P-type Bragg reflector and a current limiting layer on the N-type substrate;
etching the current confinement layer and a portion of the first P-type bragg mirror to expose a portion of a surface of the first P-type bragg mirror;
forming a first P-type bragg mirror on a surface of a portion of the first P-type bragg mirror exposed by the current confinement layer;
forming n pairs of second P-type bragg mirrors on the current confinement layer and a surface of a portion of the first P-type bragg mirror exposed by the current confinement layer;
an electrode is arranged on the second P-type Bragg reflector;
optionally, the method further comprises: in the process of forming n pairs of second P-type bragg mirrors, an insertion layer is formed between two adjacent pairs of the second P-type bragg mirrors.
8. A vertical cavity surface emitting laser, comprising:
an N-type substrate;
the N-type Bragg reflector is formed on at least part of the surface of the N-type substrate;
the multiple quantum well layer is formed on at least part of the surface of the N-type Bragg reflector far away from the N-type substrate;
x pairs of first P-type Bragg reflectors, wherein the x pairs of first P-type Bragg reflectors are formed on at least part of the surface of the multiple quantum well layer far away from the N-type Bragg reflector; wherein each pair of first P-type Bragg reflectors comprises a high-reflectivity AlGaAs layer and a low-reflectivity AlGaAs layer, and in the x pairs of first P-type Bragg reflectors, the high-reflectivity AlGaAs layer and the low-reflectivity AlGaAs layer are arranged at intervals;
a current confinement layer formed on at least a portion of a surface of the x pairs of first P-type bragg mirrors remote from the multiple quantum well layer and exposing a surface of the portion of the first P-type bragg mirrors; the current limiting layer is made of SiO2、Si3N4At least one of (a);
n pairs of second P-type bragg mirrors formed on the current confinement layer and a portion of the surface of the first P-type bragg mirror exposed by the current confinement layer; wherein each pair of the second P-type bragg reflectors comprises a high reflectivity AlGaAs layer and a low reflectivity AlGaAs layer, and in the n pairs of the second P-type bragg reflectors, the high reflectivity AlGaAs layer and the low reflectivity AlGaAs layer are arranged at intervals;
the P-type substrate is formed on at least part of the surface of the n pairs of second P-type Bragg reflectors far away from the current limiting layer;
an electrode disposed on the P-type substrate;
wherein n is a positive integer, and x is an integer greater than or equal to zero and less than n.
9. A vertical cavity surface emitting laser according to claim 8, further comprising: an insertion layer including a low reflectance AlGaAs layer and a GaAs layer; the insertion layer is arranged between two adjacent pairs of second P-type Bragg reflectors, the low-reflectivity AlGaAs layer in the insertion layer is connected with the high-reflectivity AlGaAs layer in the second P-type Bragg reflectors, and the GaAs layer in the insertion layer is connected with the low-reflectivity AlGaAs layer in the second P-type Bragg reflectors.
10. A method of manufacturing a vertical cavity surface emitting laser according to claim 8 or 9, comprising:
providing an N-type substrate, and sequentially forming an N-type Bragg reflector, a multiple quantum well layer, a first P-type Bragg reflector and a current limiting layer on the N-type substrate;
etching the current confinement layer and a portion of the first P-type bragg mirror to expose a portion of a surface of the first P-type bragg mirror;
forming a first P-type bragg mirror on a surface of a portion of the first P-type bragg mirror exposed by the current confinement layer;
providing a P-type substrate, and forming n pairs of second P-type Bragg reflectors on the P-type substrate;
combining the n pairs of second P-type Bragg reflectors with the first P-type Bragg reflector;
providing an electrode on the P-type substrate;
optionally, the method further comprises: in the process of forming n pairs of second P-type bragg mirrors, an insertion layer is formed between two adjacent pairs of the second P-type bragg mirrors.
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