CN102832537B - Surface emission semiconductor laser device with two-inner-cavity contact type n-side light emergency framework supporting structure - Google Patents
Surface emission semiconductor laser device with two-inner-cavity contact type n-side light emergency framework supporting structure Download PDFInfo
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- CN102832537B CN102832537B CN201210341667.9A CN201210341667A CN102832537B CN 102832537 B CN102832537 B CN 102832537B CN 201210341667 A CN201210341667 A CN 201210341667A CN 102832537 B CN102832537 B CN 102832537B
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Abstract
The invention discloses a surface emission semiconductor laser device with a two-inner-cavity contact type n-side light emergency framework supporting structure and a manufacturing method for the surface emission semiconductor laser device, and belongs to the technical field of semiconductor laser device manufacturing. According to the prior art, a p-type electrode and an n-type electrode are of the inner cavity contact type, but the electrodes are only introduced on the p side, so that the two-side DBR resistance is reduced. The main problem in the prior art is that the p-type electrode and the n-type electrode are formed on the same side and cannot be prepared to be closed, and the p-type electrode and the n-type electrode are semicircular, so that current distribution is asymmetric, and a light field formed by injecting current carrier induced photons is not uniform in distribution. According to the laser device structure, the p-type electrode and the n-type electrode are arranged on two sides of the device, so that the two-inner-cavity contact type structure is formed, and the injected current passes through a p-type DBR and an n-type DBR and directly enters an active region; and furthermore, the framework supporting structure and the manufacturing method of the framework supporting structure are adopted on the n side, so that the problem of collapse of the active region, which is caused by insufficient connection strength of the device structure, in a process for etching an n-type electrode window is solved.
Description
Technical field
The invention belongs to semiconductor laser manufacturing technology field, relate to a kind of two inner chamber contact n side bright dipping frame support structure face emitting semiconductor lasers and preparation method thereof.
Background technology
The power output of tradition face emitting semiconductor laser is not as good as edge-emitting laser, this is because the face emitting semiconductor laser of traditional structure is to be mainly made up of p-type DBR, active layer, N-shaped DBR, electric current is via p-type electrode, form loop through p-type DBR, active area, N-shaped DBR, N-shaped substrate and N-shaped electrode, the equivalent resistance that this structure is introduced is very large, and impedance is mainly formed by DBR, cause device heating serious, threshold current raises, internal quantum efficiency reduces.Therefore reducing the equivalent resistance of device, is one of effective way of obtaining high-power high-efficiency face emitting semiconductor laser.In order to change this situation, there is bibliographical information, only make inner chamber contact electrode in p side, walk around p-type DBR resistance, to the resistance decrease to some degree of device; Report that in addition p-type and N-shaped electrode all introduce in p side, to reduce bilateral DBR resistance, but the problem of bringing is, p-type and N-shaped electrode are opened in a side, its electrode can not be prepared into closed ring, owing to being half ring-like, according to the flow through distribution principle of resistance of electric current, the distribution of electric current forms asymmetry, and it is inhomogeneous that injected carrier brings out the optical field distribution that photon forms.Here it is to be noted, it has been recognized that two interior cavity electrodes can reduce resistance, but in its enforcement and report, one-sided introducing is only proposed, here there is a problem to solve, when p-type and N-shaped electrode are opened respectively ring-shaped groove and introduced from both sides, because remaining annular junction is only the thickness of active area, approximately tens nanometer, in preparation process, comprise rubbing down, ultrasonic cleaning etc., as easy as rolling off a log cause active area stressed, vibration avalanche.
Summary of the invention
The two inner chamber contact n side bright dipping frame support structure face emitting semiconductor lasers of one that the present invention proposes.This face emitting semiconductor laser is by changing device architecture, its electrode is from two-sided introducing, make Injection Current walk around p-type DBR and N-shaped DBR directly enters active area simultaneously, electric current injects distribution equilibrium, charge carrier brings out optical field distribution symmetrically and evenly, whole device equivalent resistance effectively reduces, and then the thermal characteristics of device is also improved.This frame support structure and preparation method thereof, has solved device architecture bonding strength deficiency, the active area avalanche problem causing simultaneously.
The present invention is achieved in that and sees cross-sectional view Fig. 1 and n end view Fig. 2.The present invention proposes a kind of two inner chamber contact n side bright dipping frame support structure face emitting semiconductor laser.The structure of described laser comprises: p-type electrode (1), p-type DBR(2), p-type ohmic contact layer (3), oxidation limiting layer (4), p-type limiting layer (5), active area (6), N-shaped limiting layer (7), N-shaped ohmic contact layer (8), N-shaped DBR(9), resilient coating (10), substrate (11), anti-reflection film (12), N-shaped electrode (13), etch areas (14), frame support structure (15).
It is characterized in that: p-type electrode (1) and N-shaped electrode (13) are all inner chamber contact electrodes, and Injection Current walks around p-type DBR simultaneously and N-shaped DBR directly enters active area;
It is characterized in that: only carry out heavily doped to p-type electrode (1) and p-type ohmic contact layer (3) part of p-type ohmic contact layer (3) contact position, not heavy doping of p-type ohmic contact layer (3) within the scope of vertical cavity, the p-type ohmic contact layer (3) that ensures that with this sharp photon of penetrating was not heavily doped absorbs in a large number;
It is characterized in that: only carry out heavily doped to N-shaped electrode (13) and N-shaped ohmic contact layer (8) part of N-shaped ohmic contact layer (8) contact position, not heavy doping of N-shaped ohmic contact layer (8) within the scope of vertical cavity, the N-shaped ohmic contact layer (8) that ensures that with this sharp photon of penetrating was not heavily doped absorbs in a large number;
It is characterized in that: p-type ohmic contact layer (3) contains phase compensation layer, and its optical thickness meets laser resonance wavelength.
It is characterized in that: N-shaped ohmic contact layer (8) contains phase compensation layer, and its optical thickness meets laser resonance wavelength.
It is characterized in that: in the etching process of formation N-shaped electrode window through ray, adopt frame support structure (15) as shown in Figure 2 to carry out mask, only have the N-shaped DBR that (14) are located to be etched away, the device architecture within the scope of resonant cavity and overall stable connection are strengthened.
It is characterized in that: the frame supported passage of frame support structure (15) can be four-way, also all the other quantity passages, its width and shape are unrestricted, and this case only provides a kind of illustrated scheme demonstration.
The manufacturing process step of the inner chamber contact surface-emitting laser that the present invention proposes is as follows:
1) at p-type DBR(2) photomask surface;
2) do with photoresist mask, corrosion p-type DBR(2) to p-type ohmic contact layer (3);
3) to carrying out heavily doped without the p-type ohmic contact layer (3) of photoresist protection;
4) evaporation p side Ohm contact electrode Ti/Pt/Au;
5) peel off;
6) alignment, etches into the top layer of p-type limiting layer (5);
7) epitaxial wafer is put into wet oxidation device and be oxidized, control oxidization time, make to be oxidized limiting layer and form sizeable oxide-aperture, to realize good photoelectricity restriction, now p side completes;
8) substrate thinning polishing, evaporation one deck anti-reflection film ZrO2;
9) n side is carried out to alignment;
10) first removing n side with HF acid does not have photoresist to make the anti-reflection film ZrO of mask protection, then carries out wet etching, until etch into the top layer of N-shaped ohmic contact layer (8), forms N-shaped electrode window through ray;
11) carry out heavily doped to the N-shaped ohmic contact layer (8) without photoresist guard electrode window place;
12), after removing photoresist completely, adopt negative gum cover to carve;
13) at n side electrode evaporation AuGe/Ni/Au electrode;
14) peel off.
So far, technique has completed the two inner chamber contact electrodes of n side exit facet launching semiconductor laser and frame support structure thereof, Injection Current walks around p-type DBR simultaneously and N-shaped DBR directly enters active area, equivalent resistance reduces greatly, thereby device has better thermal characteristics, overcome the deficiency of conventional structure technology.
Figure of description
Fig. 1: two inner chamber contact n side bright dipping frame support structure face emitting semiconductor laser cross-sectional view: wherein: p-type electrode (1), p-type DBR(2), p-type ohmic contact layer (3), oxidation limiting layer (4), p-type limiting layer (5), active area (6), N-shaped limiting layer (7), N-shaped ohmic contact layer (8), N-shaped DBR(9), resilient coating (10), substrate (11), anti-reflection film (12) and N-shaped electrode (13)
Fig. 2: the n side figure of two inner chamber contact n side bright dipping frame support structure face emitting semiconductor lasers, wherein: etch areas (14), frame support structure (15)
Specific embodiments
1, adopt mocvd method, be about on the N-shaped GaAs substrate of 635 μ m epitaxial growth N-shaped GaAs resilient coating successively at thickness; 28 pairs by Al
0.9ga
0.1as/Al
0.1ga
0.9the N-shaped DBR that As forms; N-shaped GaAs ohmic contact layer; N-shaped limiting layer; 3 couples of In
0.17ga
0.83as/GaAs
0.92p
0.08the strain-compensated quantum well gain region forming, wherein In
0.17ga
0.83as is trap material, and thickness is 6nm, GaAs
0.92p
0.08for barrier material, thickness is 4nm; P-type limiting layer; By Al
0.92ga
0.08the oxidation limiting layer that the thickness that As forms is 30nm; P-type GaAs ohmic contact layer; 30 pairs by Al
0.9ga
0.1as/Al
0.1ga
0.9the gradual change p-type DBR that As forms.
2, carry out photoetching in epitaxial wafer p side, after exposure, development, form desired litho pattern.
3, litho pattern does mask, carries out wet etching or dry etching, and the p-type DBR (2) that etching is protected without photoresist is to the top layer of ohmic contact layer (3).
4, carry out heavily doped to the annulus etched surface of ohmic contact layer (3).
5, adopt magnetic control sputtering device, evaporation p side Ohm contact electrode Ti(30nm)/Pt(50nm)/Au(200nm), then carry out sur-face peeling.
6, alignment, etching is without the p-type DBR(2 of mask protection afterwards), until the top layer of p-type limiting layer (5).
7, epitaxial wafer is put into wet oxidation device and be oxidized, 400 DEG C of oxidizing temperatures, 95 DEG C of water bath with thermostatic control temperature, N
2flow 1L/min, controls oxidization time, forms oxide-aperture, to realize good photoelectricity restriction.
8, the n of epitaxial wafer side adopt machinery method substrate is carried out to attenuate polishing, evaporation one deck anti-reflection film ZrO
2, to improve the transmitance of light.
9, adopt double-sided alignment photoetching in n side.
10, first eroding n side with HF acid solution does not have photoresist to be the anti-reflection film ZrO of mask protection
2; Adopt dry etching technology, until etch into N-shaped ohmic contact layer top layer, form N-shaped electrode window through ray.
11,, after removing photoresist completely, adopt negative gum cover to carve.
12, carry out heavily doped to the N-shaped ohmic contact layer (8) without photoresist guard electrode window place.
13, at n side electrode evaporation AuGe/Ni/Au electrode.
14, peel off.
Claims (1)
1. a two inner chamber contact n face bright dipping frame support structure face emitting semiconductor laser, it is characterized in that, described laser comprises: P type electrode (1), p-type DBR(2), p-type ohmic contact layer (3), oxidation limiting layer (4), p-type limiting layer (5), active area (6), N-shaped limiting layer (7), N-shaped ohmic contact layer (8), N-shaped DBR(9), resilient coating (10), substrate (11), anti-reflection film (12), N-shaped electrode (13), etch areas (14), frame support structure (15); P-type electrode (1) and N-shaped electrode (13) are all inner chamber contact electrodes, and electrode introduces from bilateral, and Injection Current walks around p-type DBR and N-shaped DBR directly enters active area, and equivalent resistance reduces greatly; Only carry out heavily doped to p lateral electrode (1) and p-type ohmic contact layer (3) part of p-type ohmic contact layer (3) contact position, not heavy doping of p-type ohmic contact layer (3) within the scope of vertical cavity, the p-type ohmic contact layer (3) that ensures that with this sharp photon of penetrating was not heavily doped absorbs in a large number; Only carry out heavily doped to N-shaped electrode (13) and N-shaped ohmic contact layer (8) part of N-shaped ohmic contact layer (8) contact position, not heavy doping of N-shaped ohmic contact layer (8) within the scope of vertical cavity, the N-shaped ohmic contact layer (8) that ensures that with this sharp photon of penetrating was not heavily doped absorbs in a large number; Forming in the etching process of N-shaped electrode window through ray, adopt frame support structure (15) to carry out mask, the N-shaped DBR that only has etch areas (14) to locate is etched away, and the device architecture within the scope of resonant cavity and overall stable connection are strengthened; In the etching process of formation N-shaped electrode window through ray, the frame supported passage of frame support structure (15) is four-way, and its width and shape are unrestricted.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210341667.9A CN102832537B (en) | 2012-09-14 | 2012-09-14 | Surface emission semiconductor laser device with two-inner-cavity contact type n-side light emergency framework supporting structure |
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| CN201210341667.9A CN102832537B (en) | 2012-09-14 | 2012-09-14 | Surface emission semiconductor laser device with two-inner-cavity contact type n-side light emergency framework supporting structure |
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| CN102832537B true CN102832537B (en) | 2014-08-06 |
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| CN108598867B (en) * | 2018-06-26 | 2020-06-12 | 扬州乾照光电有限公司 | DBR structure chip and preparation method thereof |
| CN109888612A (en) * | 2019-04-17 | 2019-06-14 | 中国科学院长春光学精密机械与物理研究所 | Electric pump deep ultraviolet AlGaN semiconductor laser and preparation method thereof |
| CN111355123A (en) * | 2020-05-25 | 2020-06-30 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser and method for manufacturing negative electrode thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2422763Y (en) * | 1999-11-12 | 2001-03-07 | 中国科学院长春物理研究所 | Vertical chember surface emitting microchamber laser |
| CN1564405A (en) * | 2004-04-06 | 2005-01-12 | 北京工业大学 | Prepn. of inner chanber contacting vertical chamber emitting laser by 3-shaft self-aligning process |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002017448A1 (en) * | 2000-08-22 | 2002-02-28 | Regents Of The University Of California, The | Distributed bragg reflectors incorporating sb material for long-wavelength vertical cavity surface emitting lasers |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2422763Y (en) * | 1999-11-12 | 2001-03-07 | 中国科学院长春物理研究所 | Vertical chember surface emitting microchamber laser |
| CN1564405A (en) * | 2004-04-06 | 2005-01-12 | 北京工业大学 | Prepn. of inner chanber contacting vertical chamber emitting laser by 3-shaft self-aligning process |
Non-Patent Citations (2)
| Title |
|---|
| 侯立峰.高功率垂直腔面发射半导体激光器热理论与制备工艺研究.《中国博士学位论文全文数据库》.2011,第53-58页. |
| 高功率垂直腔面发射半导体激光器热理论与制备工艺研究;侯立峰;《中国博士学位论文全文数据库》;20111231;第53-58页 * |
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Inventor after: Hou Lifeng Inventor after: Li Te Inventor after: Zhao Bo Inventor after: Ge Hongli Inventor after: Zhao Yusi Inventor after: Liu Yu Inventor after: Jin Guolie Inventor after: Xu Peng Inventor after: Wang Yong Inventor after: Liu Xuedong Inventor after: Wan Lingmin Inventor after: Zhang Jianjia Inventor after: Zhao Yingjie Inventor after: Yan Changling Inventor after: Feng Yuan Inventor after: Hao Yongqin Inventor after: Li Zhanguo Inventor before: Zhao Yingjie Inventor before: Li Te Inventor before: Zhao Bo Inventor before: Ge Hongli Inventor before: Zhao Yusi Inventor before: Liu Yu Inventor before: Jin Guolie Inventor before: Xu Peng Inventor before: Liu Xuedong Inventor before: Wan Lingmin Inventor before: Zhang Jianjia Inventor before: Hou Lifeng Inventor before: Yan Changling Inventor before: Feng Yuan Inventor before: Hao Yongqin Inventor before: Li Zhanguo |
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Free format text: CORRECT: INVENTOR; FROM: ZHAO YINGJIE LIU XUEDONG WAN LINGMIN ZHANG JIANJIA HOU LIFENG YAN CHANGLING FENG YUAN HAO YONGQIN LI ZHANGUO LI TE ZHAO BO GE HONGLI ZHAO YUSI LIU YU JIN GUOLIE XU PENG TO: HOU LIFENG LIU XUEDONG WAN LINGMIN ZHANG JIANJIA ZHAO YINGJIE YAN CHANGLING FENG YUAN HAO YONGQIN LI ZHANGUO LI TE ZHAO BO GE HONGLI ZHAO YUSI LIU YU JIN GUOLIE XU PENG WANG YONG |
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