CN106654856B - Vertical cavity surface laser and manufacturing method thereof - Google Patents
Vertical cavity surface laser and manufacturing method thereof Download PDFInfo
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- CN106654856B CN106654856B CN201710113863.3A CN201710113863A CN106654856B CN 106654856 B CN106654856 B CN 106654856B CN 201710113863 A CN201710113863 A CN 201710113863A CN 106654856 B CN106654856 B CN 106654856B
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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Abstract
The invention relates to the technical field of lasers, and provides a vertical cavity surface laser and a manufacturing method thereof. The laser comprises a laser substrate 1, an N-type distributed Bragg reflector group 2, an active region 3, an oxidation limiting layer 4, a P-surface electrode 5, an optical film 6, a second grating layer 7 and a BCB passivation layer 8; wherein, a first grating formed by oxidation is arranged on the oxidation limiting layer 4; and a second grating is etched on the light-emitting surface of the P-type distributed Bragg reflector group 6. According to the embodiment of the invention, through the introduction of the first grating formed by oxidation, the anisotropic injection of the current in the active region is realized, various problems caused by the isotropy of carrier injection, such as a spatial hole burning phenomenon, are effectively relieved, meanwhile, the introduction of the second grating further relieves the multimode and scattering problems of output light, and the self-polymerization polarized light output in the neck direction is realized.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of lasers, in particular to a vertical cavity surface laser and a manufacturing method thereof.
[ background of the invention ]
The vertical cavity surface emitting laser has the characteristics of high power, single longitudinal mode, circular light spot output, long service life, easiness in two-dimensional integration and the like, so that the commercial application of the high-power vertical cavity surface emitting laser is more and more extensive, particularly in the fields of telecommunication, laser display, laser ignition, pumping sources, laser processing and the like. Through continuous efforts for decades around the world, the market for VCSELs is becoming larger and larger. The defects of high threshold current, low photoelectric conversion efficiency and the like of the high-power vertical cavity surface emitting laser are well improved. For a long time, a Vertical cavity surface Emitting semiconductor Laser (VCSEL) is always at a low power level, which greatly restricts the application of the device. The power level of the VCSEL material is greatly improved only by the development of the VCSEL material growth and preparation technology in recent years, so that a wide prospect is opened for the application development of the VCSEL laser. However, as the VCSEL laser power is continuously increased, the solution of the problem of the laser mode becomes increasingly urgent and important, because the increase of the VCSEL laser power has not only not improved the laser mode but also has an adverse effect on the acquisition of the fundamental mode. This also limits the usefulness of VCSEL lasers in a number of important applications. Therefore, it is necessary to solve the problem of VCSEL laser power and the problem of optical mode to develop a VCSEL laser with high quality and suitability for application, which is an important issue facing the semiconductor laser field at home and abroad.
The most extensive solution proposed at present for the optical mode problem in China is a grating modulation vertical emission laser. However, there is no systematic and technically simple solution to the various types of grating modulated vertical emission lasers.
[ summary of the invention ]
The technical problem to be solved by the embodiment of the invention is that the vertical cavity surface emitting laser has light scattering and multimode caused by polarization switch effect.
The embodiment of the invention adopts the following technical scheme:
in a first aspect, an embodiment of the present invention provides a vertical cavity surface laser, including a substrate 1, an N-type distributed bragg reflector group 2, an active region 3, an oxidation limiting layer 4, a P-surface electrode 5, an optical film 6, a second grating layer 7, and a BCB passivation layer 8; the N-type distributed Bragg reflector group 2, the active region 3, the oxidation limiting layer 4, the P-type distributed Bragg reflector group 6 and the BCB passivation layer 8 are sequentially stacked and positioned on the substrate 1; wherein, a first grating formed by oxidation is arranged on the oxidation limiting layer 4; and a second grating is etched on the light-emitting surface of the P-type distributed Bragg reflector group 6.
Optionally, the first grating is a strip grating, and the second grating is an annular grating, wherein the strip grating is formed by oxidizing a conductive strip region and a non-conductive strip region in parallel and alternately.
Optionally, the first grating is a ring grating, and the second grating is a stripe grating, wherein the ring grating is formed by alternately oxidizing concentric rings into a conductive stripe region and a non-conductive stripe region.
Optionally, the P-type distributed bragg reflector group 6 is an evaporated optical medium film group, and the optical medium film group is formed by one or more oxides alternately according to the thickness of one quarter of the working wavelength of the laser; or alternatively one or more non-oxide optical films, in thicknesses of one quarter of the operating wavelength of the laser; or alternatively composed of oxides and non-oxides alternating by a thickness of one quarter of the operating wavelength of the laser.
Optionally, the oxide for forming the optical dielectric film comprises SiOx, Al2O3、TiO2、ZrO2、HfO2And Ta2O5One or more of; non-oxides for forming optical dielectric films include SiNx, ZnS, CaF2And MgF2One or more of.
Optionally, the distance between the first grating in the oxidation limiting layer and the second grating in the optical medium film group is adjusted according to the wavelength of the output light.
Optionally, the composition and thickness of the optical medium film group are adjusted according to the second grating.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a vertical cavity surface laser, including:
sequentially epitaxially growing an N-type distributed Bragg reflector group 2, an active region 3 and an oxidation limiting layer 4 on a substrate 1;
etching a first grating pattern on the surface of the oxidation limiting layer 4, manufacturing a non-conductive strip-shaped area by a directional oxidation method, and forming the grating pattern with the conductive strip-shaped area;
epitaxially growing a P-type distributed Bragg reflector group 6 on the oxidation limiting layer 4, and etching a second grating on an optical dielectric film at the light-emitting surface of the P-type distributed Bragg reflector group 6;
and manufacturing an ohmic contact layer and a P electrode on the P-type distributed Bragg reflector group 6.
Optionally, the first grating is a strip grating, and the second grating is an annular grating, wherein the strip grating is formed by oxidizing a conductive strip region and a non-conductive strip region in parallel and alternately; or,
the first grating is a ring grating, the second grating is a strip grating, wherein the ring grating is formed by alternately oxidizing concentric rings of a conductive strip region and a non-conductive strip region.
Optionally, the optical medium film group is formed by one or more oxides alternately according to the thickness of one quarter of the working wavelength of the laser; or alternatively one or more non-oxide optical films, in thicknesses of one quarter of the operating wavelength of the laser; or alternatively composed of oxides and non-oxides alternating by a thickness of one quarter of the operating wavelength of the laser.
According to the embodiment of the invention, through the introduction of the first grating formed by oxidation, the anisotropic injection of the current in the active region is realized, various problems caused by the isotropy of carrier injection, such as a spatial hole burning phenomenon, are effectively relieved, meanwhile, the introduction of the second grating further relieves the multimode and scattering problems of output light, and the self-polymerization polarized light output in the neck direction is realized.
And in the alternative, the combination of the oxidized strip grating, the ring grating and the optical dielectric film DBR brings great space for the modulation of light and the structure of the laser resonant cavity.
In addition, the vertical cavity surface emitting laser provided by the embodiment of the invention has the advantages of simple and convenient manufacturing process, good repeatability and easy popularization.
[ description of the drawings ]
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a vertical cavity surface laser structure provided by an embodiment of the present invention;
FIG. 2 is a schematic top view of a vertical cavity surface laser structure according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for fabricating a vertical cavity surface laser according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a vertical cavity surface laser structure provided by an embodiment of the present invention;
FIG. 5 is a schematic top view of a vertical cavity surface laser structure according to an embodiment of the present invention;
FIG. 6 is a schematic flow chart of a method for fabricating a vertical cavity surface laser according to an embodiment of the present invention;
fig. 7 is a schematic flowchart of a method for manufacturing a vertical cavity surface laser according to an embodiment of the present invention.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are for convenience only to describe the present invention without requiring the present invention to be necessarily constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiments of the present invention are directed to solving the problem of single transverse mode and single polarization of a high power VCSEL laser. The vertical cavity surface laser and the manufacturing method thereof provided by the embodiment of the invention have important significance for developing the application of the VCSEL laser, particularly solving the high-quality miniature laser required by the application of miniature load laser ranging, space communication, target identification, tracking guidance and the like in the space detection technology.
Since the advent of the lateral oxidation confinement structure, the threshold current, modulation speed, and photoelectric conversion efficiency of the device were greatly improved. However, this structure has a drawback that it cannot be eliminated by itself, that is, a phenomenon that the current density at the edge of the insulating layer after the side oxidation is higher than that at the central region. The phenomenon of gain overlap of the optical mode cannot be eliminated and even if the current is injected perfectly uniformly in the oxide confinement layer, most of the current is concentrated on the oxide confinement layer boundary, mainly because the area is the square of the radius. The optical mode is thus maximized in the center, which results in increased threshold current, reduced efficiency and more spatial hole burning for devices with an aperture of 10 μm and above. Even if the aperture is reduced to a single mode size of about 3 μm, gain overlap can be improved but this drawback cannot be eliminated, and carriers are diffused in a range of several micrometers outside the small aperture to increase threshold current and parasitic capacitance so that light scattering is correspondingly enlarged.
In order to solve the above problems, the present invention will be described below with reference to the following embodiments, which respectively illustrate how to overcome the corresponding technical problems from the structure and the manufacturing method.
Example 1:
embodiment 1 of the present invention provides a vertical cavity surface laser, as shown in fig. 1-2, a substrate 1, an N-type distributed bragg reflector group 2, an active region 3, an oxidation limiting layer 4, a P-surface electrode 5, an optical film 6, a second grating layer 7, and a BCB passivation layer 8; the N-type distributed Bragg reflector group 2, the active region 3, the oxidation limiting layer 4, the P-surface electrode 5, the optical film 6, the second grating layer 7 and the BCB passivation layer 8 are sequentially stacked and positioned on the substrate 1; wherein, a first grating is arranged on the oxidation limiting layer 4; and a second grating 7 is etched on the light-emitting surface of the optical film 6.
According to the embodiment of the invention, through the introduction of the first grating formed by oxidation, the anisotropic injection of the current in the active region is realized, various problems caused by the isotropy of carrier injection, such as a spatial hole burning phenomenon, are effectively relieved, meanwhile, the introduction of the second grating further relieves the multimode and scattering problems of output light, and the self-polymerization polarized light output in the neck direction is realized. The vertical cavity surface emitting laser provided by the embodiment of the invention has the advantages of simple and direct structure manufacturing process, good repeatability and easy popularization.
In the embodiment of the present invention, in order to solve the problem of high process requirement of the secondary epitaxial semiconductor material, there is a preferred implementation manner, in which the optical film 6 is specifically implemented as a P-type distributed bragg reflector group 6 and is composed of an evaporated optical dielectric film group.
When the P-type distributed bragg reflector group 6 is an evaporated optical medium film group, in a specific implementation process, the optical medium film group is formed by one or more oxides alternately according to the thickness of one quarter of the working wavelength of the laser; or alternatively one or more non-oxide optical films, in thicknesses of one quarter of the operating wavelength of the laser; or alternatively composed of oxides and non-oxides alternating by a thickness of one quarter of the operating wavelength of the laser.
Wherein the oxide for forming the optical dielectric film comprises SiOx and Al2O3、TiO2、ZrO2、HfO2And Ta2O5One or more of; non-oxides for forming optical dielectric films include SiNx, ZnS, CaF2And MgF2One or more of.
In the embodiment of the invention, the pitches of the first grating in the oxidation limiting layer and the second grating in the optical medium film group are adjusted according to the wavelength of the output light.
In the embodiment of the invention, the composition and the thickness of the optical medium film group are obtained by adjusting according to the second grating.
In the embodiment of the present invention, the optional N electrode 0 is formed on the bottom surface of the substrate 1.
Example 2:
the embodiment of the invention is a specific implementation manner provided on the basis of the structure of the vertical cavity surface laser in embodiment 1, in this embodiment, the first grating is a strip grating, and the second grating is a ring grating, wherein the strip grating is formed by oxidizing a conductive strip region and a non-conductive strip region in parallel and alternately. As shown in fig. 1-2, the vertical cavity surface laser structure substrate 1, the N-type distributed bragg reflector set 2, the active region 3, the oxidation limiting layer 4, the P-surface electrode 5, the P-type distributed bragg reflector set 6, the second grating layer 7 and the BCB passivation layer 8; the N-type distributed Bragg reflector group 2, the active region 3, the oxidation limiting layer 4, the P-surface electrode 5, the P-type distributed Bragg reflector group 6, the second grating layer 7 and the BCB passivation layer 8 are sequentially stacked and positioned on the substrate 1; wherein, a strip grating formed by oxidation is arranged on the oxidation limiting layer 4; and an annular grating is etched on the light-emitting surface of the P-type distributed Bragg reflector group 6.
Compared with the vertical cavity surface laser in the embodiment 1, the vertical cavity surface laser can achieve anisotropic injection of current in an active region, effectively relieve various problems caused by carrier injection isotropy, such as a spatial hole burning phenomenon, and the like, and meanwhile, the introduction of the second grating further relieves the multimode and scattering problems of output light, and achieves the beneficial effect of self-polymerization polarized light output in the neck direction. The combination of the grating based on the oxide type strip, the ring and the optical dielectric film DBR can bring great space for the light modulation and the structure of the laser resonant cavity.
Example 3:
the embodiment of the invention is a specific implementation manner provided on the basis of the structure of the vertical cavity surface laser in embodiment 1, in the embodiment, the first grating is a ring grating, and the second grating is a strip grating, wherein the ring grating is formed by alternately oxidizing concentric rings into a conductive strip region and a non-conductive strip region. As shown in fig. 1-2, the vertical cavity surface laser structure substrate 1, the N-type distributed bragg reflector set 2, the active region 3, the oxidation limiting layer 4, the P-surface electrode 5, the P-type distributed bragg reflector set 6, the second grating layer 7 and the BCB passivation layer 8; the N-type distributed Bragg reflector group 2, the active region 3, the oxidation limiting layer 4, the P-surface electrode 5, the P-type distributed Bragg reflector group 6, the second grating layer 7 and the BCB passivation layer 8 are sequentially stacked and positioned on the substrate 1; wherein, the oxidation limiting layer 4 is provided with an annular grating formed by oxidation; and a strip-shaped grating is etched on the light-emitting surface of the P-type distributed Bragg reflector group 6.
This example is slightly less effective in alleviating the isotropy of carrier injection than example 2, but still can be one of the improvements provided by this example of the present invention.
Example 4:
the embodiment of the present invention further provides a method for manufacturing a vertical cavity surface laser, as shown in fig. 3, including:
in step 201, an N-type dbr 2, an active region 3, and an oxide confinement layer 4 are epitaxially grown on a substrate 1 in this order.
In step 202, a first grating pattern is engraved on the surface of the oxidation limiting layer 4, and a conductive and non-conductive area is formed by a directional oxidation method, and the first grating pattern is formed with the conductive area.
In step 203, an optical film 6 is epitaxially grown on the oxidation-limited layer 4, and a second grating layer 7 is etched and formed on the optical dielectric film at the light-emitting surface of the optical film 6.
In step 204, a BCB passivation layer 8 is formed on the P-type dbr 6, and a P-side electrode 5 is formed on the oxide confinement layer 4 by etching.
According to the embodiment of the invention, through the introduction of the first grating formed by oxidation, the anisotropic injection of the current in the active region is realized, various problems caused by the isotropy of carrier injection, such as a spatial hole burning phenomenon, are effectively relieved, meanwhile, the introduction of the second grating further relieves the multimode and scattering problems of output light, and the self-polymerization polarized light output in the neck direction is realized.
Example 5:
the embodiment of the present invention sets forth specific implementation contents after the step 201 is executed from the aspect of a specific industrial product manufacturing process, and relates to the related contents in the above-mentioned steps 202 and 204.
In step 301, the epitaxial wafer is cleaned: during cleaning, special attention needs to be paid to the fact that the surface structure of the epitaxial wafer cannot be damaged, deep scratches are avoided to the greatest extent, otherwise, the wafer is difficult to process at a later stage, and the surface of the cleaned wafer is bright and smooth and has no impurity pollution. Through repeated experimental research, we conclude a set of efficient epitaxial wafer cleaning method, which adopts water bath cleaning and wiping before photoetching, and adopts dilute acid and alkali solution to remove surface oxide films and the like before growing optical films and metal electrodes. In the laboratory, carbon tetrachloride, trichloroethylene, acetone, ethanol, hydrochloric acid, ammonia and the like are commonly used as the reagents.
In step 302, photolithography: growing a layer of 200nm silicon nitride on the cleaned epitaxial wafer, coating photoresist, transferring the pattern on the photoetching plate onto the epitaxial wafer by adopting an ultraviolet contact type exposure machine, fully utilizing the structural part of the epitaxial wafer during the first photoetching, etching the pattern on the photoetching plate onto the chip as much as possible, and etching the silicon nitride by a dry method after photoetching to finish the pattern transfer of the strip-shaped grating at the light-emitting surface. And removing the photoresist to prepare for wet oxidation.
In step 303, wet selective oxidation: 1.5L/min N at a temperature of 420 DEG C2Carrying water vapor with certain temperature to carry out selective wet oxidation, controlling the oxidation depth by time, and removing the surface silicon nitride after the oxidation is finished.
In step 304, growth of an optical media film: and (4) finishing the growth of the P-type DBR through a thermal evaporation process.
In step 305, an N electrode channel is etched, with ICP etching, under the protection of photoresist.
In step 306, the BCB passivates the chip: the BCB insulating film with uniform and compact passivation is beneficial to a device enhancerThe performance of the device is improved, and the service life of the device is prolonged. In the past, SiO is adopted2As a passivation insulating layer, but due to SiO2The thermal conductivity of the high-power VCSEL is too low, which seriously affects the heat dissipation performance of the VCSEL, especially the heat dissipation performance of the high-power VCSEL, and further reduces the efficiency, power and service life of the device.
In step 307, N-plane fabrication electrodes: and thermally evaporating Ge-Au-Ni-Au by using vacuum coating machine equipment.
In step 308, the alloy: the epitaxial wafer on which the N-side electrode was formed was peeled off in NMP and then placed in an RTP-500 rapid thermal processing apparatus to alloy at 380 ℃ for 60 seconds.
In step 309, P electrode fabrication, electron beam thermal evaporation of Ti-Pt-Au.
In step 310, an optical grating is formed on the mesa of the light exit hole by etching and etching the optical dielectric film at the mesa of the light exit hole by ICP.
In step 311, an antireflection film is grown on the light emitting surface.
Example 6:
the embodiment of the present invention further provides a structure of a vertical cavity surface laser, which is more universal (a buffer layer 9 is introduced, and an application example of the vertical cavity surface laser with an N electrode and a P electrode on the same side is provided) than the structure described in embodiment 1 (only necessary technical features are described), as shown in fig. 4 and fig. 5 (where fig. 4 is a cross-sectional view of fig. 5 viewed from an angle a-a'), and includes a substrate 1, a buffer layer 9, an N-type distributed bragg reflector set 2, an active region 3, an oxide confinement layer 4, a P-type distributed bragg reflector set 6, and a passivation layer 8; the buffer layer 9, the N-type distributed Bragg reflector group 2, the active region 3, the oxidation limiting layer 4, the P-type distributed Bragg reflector group 6 and the passivation layer 8 are sequentially stacked and positioned on the substrate 1; a P electrode 5 is formed on the oxidation limiting layer 4 through photoetching, an N electrode 0 is formed on the N-type distributed Bragg reflector group 2 through photoetching, a strip-shaped grating is arranged on the oxidation limiting layer 4, and the strip-shaped grating is formed by oxidizing a conductive strip-shaped region and a non-conductive strip-shaped region in an alternating manner in parallel; and the light-emitting surface of the P-type distributed Bragg reflector group 6 is etched and manufactured with an annular grating 7.
According to the embodiment of the invention, through the introduction of the first grating formed by oxidation, the anisotropic injection of the current in the active region is realized, various problems caused by the isotropy of carrier injection, such as a spatial hole burning phenomenon, are effectively relieved, meanwhile, the introduction of the second grating further relieves the multimode and scattering problems of output light, and the self-polymerization polarized light output in the neck direction is realized. The vertical cavity surface emitting laser provided by the embodiment of the invention has the advantages of simple and direct structure manufacturing process, good repeatability and easy popularization. In addition, the P electrode and the N electrode are manufactured on the same surface in the embodiment of the invention, so that the method can be suitable for specific application occasions.
Example 7:
corresponding to the structure of the vertical cavity surface laser provided in embodiment 6, an embodiment of the present invention further provides a method for manufacturing the structure, as shown in fig. 6, where the method includes the following steps.
In step 401, an N-type dbr group 2, an active region 3, and an oxide confinement layer 4 are epitaxially grown on a substrate 1 in this order.
In step 402, a first grating pattern is patterned on the surface of the oxide-confined layer 4, and a conductive and non-conductive area is formed by a directional oxidation method, and the first grating pattern is formed with the conductive area.
In step 403, a P-type distributed bragg reflector 6 is epitaxially grown on the oxide confinement layer 4, and a second grating is formed by etching on the optical dielectric film at the light exit surface of the P-type distributed bragg reflector 6.
In step 404, mesa-structured P-dbr 6 is etched out over the oxide confinement layer 4, as shown in fig. 4, and a passivation layer 8 is grown in the etched-out regions.
In step 405, after the laser completes the fabrication of the passivation layer 8, a P electrode 5 is formed on the oxide confinement layer 4 by photolithography lift-off, and an N electrode 0 is formed on the N-type dbr 2.
The embodiment of the invention provides a processing production sequence, and the P-type distributed Bragg reflector group 6 with the mesa structure is formed in an etching mode, so that the manufacture of the mesa structure is simplified to a certain extent, but the problems of side flatness and excessive etching exist in the etching process, but the problems are not negligible in the embodiment. Therefore, in connection with the present embodiment, there is also a preferable implementation that an etch stop layer is grown between the oxide confinement layer 4 and the P-dbr 6, so as to avoid the over-etching problem.
Example 8:
corresponding to the structure of the vertical cavity surface laser provided in embodiment 6, the embodiment of the present invention further provides a method for manufacturing the structure, and compared with the method flow provided in embodiment 7, the implementation steps of this embodiment have certain adjustments, as shown in fig. 7, and the method includes the following implementation steps.
In step 401, an N-type dbr group 2, an active region 3, and an oxide confinement layer 4 are epitaxially grown on a substrate 1 in this order.
In step 402, a first grating pattern is patterned on the surface of the oxide-confined layer 4, and a conductive and non-conductive area is formed by a directional oxidation method, and the first grating pattern is formed with the conductive area.
In step 403', a P-type dbr 6 with a mesa structure is formed by selectively growing a P-type dbr on the oxide confinement layer 4 in an epitaxial manner.
In step 404', a passivation layer 8 is grown on the non-electrode contact region outside the P-type dbr group 6 of the mesa structure.
In step 405', after the laser completes the fabrication of the passivation layer 8, a P electrode 5 is formed on the oxide confinement layer 4 by photolithography lift-off, and an N electrode 0 is formed on the N-type dbr 2.
In step 406', a second grating is formed on the optical dielectric film at the light exit surface of the P-type dbr 6 by etching.
Compared with the method described in embodiment 7, in the embodiment of the present invention, a selective area growth method is provided for generating the P-type dbr 6 with a mesa structure, so as to avoid the transitional corrosion problem that may be caused by the etching method used in embodiment 7. Compared with the way of adding the corrosion stop layer in the embodiment 7, the embodiment of the invention can further ensure the optical quality of the final product because the corrosion stop layer is not additionally added.
In addition, the embodiment of the invention puts the manufacturing process of the second grating at the end, thereby further avoiding the damage to the second grating structure when manufacturing the N electrode or the P electrode. Even if SiO2 is used for mask protection, the presence of a non-planar grating structure leads to high requirements during the process and the possibility of incomplete removal during the mask removal process.
Example 9:
the embodiment of the present invention sets forth specific implementation contents after the step 401 is performed, and relates to the related contents in the above steps 403 '-406', from the aspect of manufacturing process of specific industrial products.
In step 501, the epitaxial wafer is cleaned: during cleaning, special attention needs to be paid to the fact that the surface structure of the epitaxial wafer cannot be damaged, deep scratches are avoided to the greatest extent, otherwise, the wafer is difficult to process at a later stage, and the surface of the cleaned wafer is bright and smooth and has no impurity pollution. Through repeated experimental research, we conclude a set of efficient epitaxial wafer cleaning method, which adopts water bath cleaning and wiping before photoetching, and adopts dilute acid and alkali solution to remove surface oxide films and the like before growing optical films and metal electrodes. In the laboratory, carbon tetrachloride, trichloroethylene, acetone, ethanol, hydrochloric acid, ammonia and the like are commonly used as the reagents.
In step 502, photolithography: the pattern on the photoetching plate is transferred onto the epitaxial wafer by adopting an ultraviolet contact type exposure machine, the structural part of the epitaxial wafer is fully utilized during the first photoetching, the pattern of the photoetching plate is etched onto the chip as much as possible, the best cleaned pattern is obtained after the photoetching, and the overexposure or the underexposure can greatly influence the subsequent second photoetching.
In step 503, ICP etches the mesa: under the protection of the photoresist, the silicon nitride mask is etched until the high aluminum layer (namely the AlAs layer) is just exposed, so that the wet selective oxidation is carried out. And thoroughly cleaning the epitaxial wafer with the etched table top to prepare for wet oxidation.
In step 504, wet selective oxidation: 1.5L/min N at a temperature of 420 DEG C2Carrying water vapor with a certain temperature for selective wet oxidation, controlling the oxidation depth by time, and selecting a proper oxidation aperture is beneficial to reducing the threshold value of the device and improving the output power of the device.
In step 505, N contact channels are etched by ICP under the protection of photoresist.
In step 506, N-plane fabrication electrodes: and thermally evaporating Ge-Au-Ni-Au by using vacuum coating machine equipment.
In step 507, the alloy: the epitaxial wafer on which the N-side electrode was formed was peeled off in NMP and then placed in an RTP-500 rapid thermal processing apparatus to alloy at 380 ℃ for 60 seconds.
In step 508, the BCB passivates the chip: the uniform and compact passivation of the BCB insulating film is beneficial to improving the performance of the device and prolonging the service life of the device. In the past, SiO is adopted2As a passivation insulating layer, but due to SiO2The thermal conductivity of the high-power VCSEL is too low, which seriously affects the heat dissipation performance of the VCSEL, especially the heat dissipation performance of the high-power VCSEL, and further reduces the efficiency, power and service life of the device.
In step 509, the P electrode is fabricated and the electron beam thermally evaporates the Ti-Pt-Au.
In step 510, the grating at the exit hole is obtained by etching after the fabrication of the exit hole mesa grating.
In step 511, an antireflection film is grown on the light emitting surface.
It should be noted that the explanations of the related objects or modules in the above structural embodiments (embodiments 1, 2, 3, and 6) are also applicable to the method step embodiments ( embodiments 4, 5, 7, 8, and 9), and the explanations of the related objects or modules in the method step embodiments are also applicable to the structural embodiments, which are not described herein again.
Those of ordinary skill in the art will appreciate that all or part of the steps of the various methods of the embodiments may be implemented by associated hardware as instructed by a program, which may be stored on a computer-readable storage medium, which may include: a Read Only Memory (ROM), a Random Access Memory (RAM), a magnetic or optical disk, or the like.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. A vertical cavity surface laser is characterized in that a substrate (1), an N-type distributed Bragg reflector group (2), an active region (3), an oxidation limiting layer (4), a P-surface electrode (5), a P-type distributed Bragg reflector group (6), a second grating layer (7) and a BCB passivation layer (8) are arranged; the N-type distributed Bragg reflector group (2), the active region (3), the oxidation limiting layer (4) and the P-type distributed Bragg reflector group (6) are sequentially stacked and positioned on the substrate (1); wherein, the BCB passivation layer (8) grows in a non-electrode contact area outside the P-type distributed Bragg reflector group (6) of the mesa structure; wherein a first grating formed by oxidation is arranged on the oxidation limiting layer (4); a second grating is etched on the light-emitting surface of the P-type distributed Bragg reflector group (6);
the first grating is a strip grating, the second grating is an annular grating, and the strip grating is formed by oxidizing a conductive strip region and a non-conductive strip region in an alternating manner;
wherein, a P electrode (5) is formed on the oxidation limiting layer (4) by photolithography.
2. The vertical cavity surface laser as claimed in claim 1, wherein the P-type distributed bragg reflector group (6) is composed of an evaporated optical medium film group; the optical medium film group is formed by one or more oxides alternately according to the thickness of one quarter of the working wavelength of the laser; or alternatively one or more non-oxide optical films, in thicknesses of one quarter of the operating wavelength of the laser; or alternatively composed of oxides and non-oxides alternating by a thickness of one quarter of the operating wavelength of the laser.
3. The VCSEL of claim 2, wherein the oxide for forming the optical dielectric film includes SiOx, Al2O3、TiO2、ZrO2、HfO2And Ta2O5One or more of; non-oxides for forming optical dielectric films include SiNx, ZnS, CaF2And MgF2One or more of.
4. The vertical cavity surface laser as claimed in claim 1, wherein the pitch of the first grating in the oxide confinement layer and the second grating in the P-type distributed bragg reflector group (6) is adjusted according to the wavelength of the output light.
5. A method for manufacturing a vertical cavity surface laser comprises the following steps:
the method comprises the following steps that an N-type distributed Bragg reflector group (2), an active region (3) and an oxidation limiting layer (4) are epitaxially grown on a substrate (1) in sequence;
etching a first grating pattern on the surface of the oxidation limiting layer (4), manufacturing a non-conductive strip-shaped area by a directional oxidation method, and forming the grating pattern with the conductive strip-shaped area;
epitaxially growing a P-type distributed Bragg reflector group (6) on the oxidation limiting layer (4);
growing a passivation layer (8) in a non-electrode contact area outside the P-type distributed Bragg reflector group (6) of the mesa structure;
after the laser finishes the manufacture of a passivation layer (8), forming a P electrode (5) on the oxidation limiting layer (4) through photoetching stripping, and forming an N electrode (0) on the N-type distributed Bragg reflector group (2);
etching a second grating on the optical dielectric film at the light-emitting surface of the P-type distributed Bragg reflector group (6);
the first grating is a strip grating, the second grating is an annular grating, and the strip grating is formed by oxidizing a conductive strip region and a non-conductive strip region in an alternating parallel mode.
6. The method of claim 5 wherein the group of optical dielectric films is formed of one or more oxides alternating in thickness of one quarter of the operating wavelength of the laser; or alternatively one or more non-oxide optical films, in thicknesses of one quarter of the operating wavelength of the laser; or alternatively composed of oxides and non-oxides alternating by a thickness of one quarter of the operating wavelength of the laser.
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| CN108512032A (en) * | 2018-04-17 | 2018-09-07 | 北京工业大学 | A kind of end face launching semiconductor laser with end face grating selection mechanism |
| CN109980501B (en) * | 2019-05-05 | 2024-05-10 | 厦门乾照半导体科技有限公司 | Vertical plane-emitting laser structure and manufacturing method thereof |
| CN110212407B (en) * | 2019-07-08 | 2024-02-09 | 苏州长瑞光电有限公司 | Vertical cavity surface emitting laser and power adjusting method thereof |
| CN111106533A (en) * | 2019-12-21 | 2020-05-05 | 江西德瑞光电技术有限责任公司 | VCSEL chip and manufacturing method thereof |
| CN111211488A (en) * | 2020-01-16 | 2020-05-29 | 浙江博升光电科技有限公司 | High contrast grating vertical cavity surface emitting laser and method of manufacture |
| CN112490851B (en) * | 2020-11-30 | 2022-07-12 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with upper and lower electrodes arranged in staggered manner |
| CN112993750B (en) * | 2021-01-28 | 2022-03-15 | 华芯半导体研究院(北京)有限公司 | VCSEL chip, preparation method thereof and laser scanning radar |
| CN113285352A (en) * | 2021-07-23 | 2021-08-20 | 华芯半导体研究院(北京)有限公司 | Vertical cavity surface emitting laser with sorting protection structure |
| CN113791416B (en) * | 2021-09-10 | 2023-12-05 | 苏州长光华芯光电技术股份有限公司 | Laser radar system |
| CN114899707B (en) * | 2022-07-12 | 2022-10-11 | 苏州长光华芯光电技术股份有限公司 | Vertical-cavity surface-emitting semiconductor light-emitting structure and preparation method thereof |
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