CN208723310U - A kind of oxidized form planar laser with vertical cavity - Google Patents
A kind of oxidized form planar laser with vertical cavity Download PDFInfo
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- CN208723310U CN208723310U CN201821479837.9U CN201821479837U CN208723310U CN 208723310 U CN208723310 U CN 208723310U CN 201821479837 U CN201821479837 U CN 201821479837U CN 208723310 U CN208723310 U CN 208723310U
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- oxidation
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- table top
- vertical cavity
- planar laser
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Abstract
The utility model belongs to photoelectron technical field, discloses a kind of oxidized form planar laser with vertical cavity, from bottom to up successively includes: the face N electrode, substrate, N-type DBR, active area, oxidation limiting layer, p-type DBR, p side electrode；The p-type DBR is column table top, and the center of the table top is equipped with oxidation hole, and the table top includes gap, and multiple gap are uniformly distributed around the oxidation hole.The utility model solves the problems, such as that the current density ratio central area at the edge of insulating layer after the oxidation of side in the prior art is high, has reached reduction oxidation depth, the technical effect for improving oxidation accuracy, saving oxidation cost.
Description
Technical field
The utility model relates to photoelectron technical field more particularly to a kind of oxidized form planar laser with vertical cavity.
Background technique
In recent years, in the development of vertical cavity surface emitting laser, electric current is formed using selective oxidation technology extensively and is infused
Enter window, the method to realize extremely low threshold current/voltage and higher-wattage transfer efficiency.Because at a temperature of 400~500 DEG C
Wet oxidation there is very strong selectivity to the Al-GaAs of AlAs and high Al contents, and the oxide layer performance formed it is stable,
Electrical insulating property is good, refractive index is low, is very suitable for current limit and optical confinement, so this oxidation technology is in III-V race half
Conductor device preparation and photoelectricity have broad application prospects in integrating, and are currently widely used for vertical cavity surface emitting laser
(VCSELs) in the research of device preparation.
One difficult point of VCSEL preparation is to form ideal electric current injection limitation, and selective wet oxidation can be convenient
Ground forms good electric current and optical confinement layer in VCSEL, so that the device performance of VCSEL be made to make a breakthrough.Cause
This, selective oxidation technology has become a technique being most widely used in current VCSEL and its array development.Selective oxygen
The difficult point of change technology first is that accurate control to oxidation depth.
There are many report at present about wet oxidation rule, but oxidation depth linear rule or para-curve gauge at any time
Rule is always the focus of people's dispute.Mesa shape is to influence a factor of oxidation rate, since side oxidation limiting structure
Occur, threshold current, modulating speed and the photoelectric conversion efficiency of device are very significantly improved.But this structure there is also
The defect that itself can not be eliminated, that is, after the oxidation of side, the current density at the edge of insulating layer can be higher than central area.Nothing
Method eliminates the phenomenon that gain overlapping of optical mode, even if electric current is uniformly injected into oxidation limiting layer perfection, most of electric current also can
Concentrate on oxidation limiting layer boundary, be primarily due to area be radius square relationship.Therefore optical mode reaches at center
Maximum, the increase of threshold current, the reduction of efficiency, space that such result will lead to the device in 10 μm of aperture or more are burnt
Hole becomes more serious.Even if aperture narrows down to 3 μm or so of single mode dimensions, gain overlapping be can be improved, but this defect
Still it cannot eliminate, carrier spreads to increase threshold current and parasitic capacitance in several micron ranges outside small-bore,
To which the scattering of light is also extended accordingly.
Utility model content
The embodiment of the present application is by providing a kind of oxidized form planar laser with vertical cavity, after solving side oxidation in the prior art
The high problem in the current density ratio central area at the edge of insulating layer.
The embodiment of the present application provides a kind of oxidized form planar laser with vertical cavity, from bottom to up successively includes: the face N electrode, lining
Bottom, N-type DBR, active area, oxidation limiting layer, p-type DBR, p side electrode；
The p-type DBR is column table top, and the center of the table top is equipped with oxidation hole, and the table top includes gap, multiple
The gap is uniformly distributed around the oxidation hole.
Preferably, oxidation depth is the vertex of the gap to the distance in the oxidation hole, and the oxidation depth is less than institute
State the radius of table top.
Preferably, the gap carries out even partition to the p side electrode.
Preferably, the region for removing the table top in the oxidation hole is greater than the region of the p side electrode.
Preferably, the arc side of the gap is standard circular arc.
Preferably, the radius of the table top is 14um, and the radius in the oxidation hole is 8um, and the oxidation depth is 2um,
The radius of the gap is 4um, and the quantity of the gap is 9, and the distance between multiple described gap are 1.75um.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
In the embodiment of the present application, the p-type DBR in laser is column table top, and the center of table top is equipped with oxidation hole, in platform
Gap is introduced on face, due to the isotropism of oxidation, the oxidation depth of table top be reduced to gap vertex to oxidation hole distance, can
To reduce the depth of oxidation significantly, the accuracy of oxidation is improved, saves oxidation cost, is insulated after side oxidation can also be effectively reduced
The current density at the edge of layer, and then a series of current density unevenness are reduced on the influence of laser bring.
Detailed description of the invention
It, below will be to needed in embodiment description in order to illustrate more clearly of the technical solution in the present embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is one embodiment of the utility model, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is a kind of overall structure diagram of oxidized form planar laser with vertical cavity provided by the embodiment of the utility model；
Fig. 2 is the structural representation of table top in a kind of oxidized form planar laser with vertical cavity provided by the embodiment of the utility model
Figure；
Fig. 3 is the structure design of table top in a kind of oxidized form planar laser with vertical cavity provided by the embodiment of the utility model
Figure.
Wherein, the face 1-N electrode, 2- substrate, 3-N type DBR, 4- active area, 5- oxidation limiting layer, 6-P type DBR, 7-P face electricity
Pole；
61- aoxidizes hole, the non-oxide bore region table top of 62-, 63- gap；
64- aoxidizes pore radius, 65- table top radius, 66- gap radius, 67- gap spacing, 68- oxidation depth.
Specific embodiment
In order to better understand the above technical scheme, in conjunction with appended figures and specific embodiments to upper
Technical solution is stated to be described in detail.
A kind of oxidized form planar laser with vertical cavity is present embodiments provided, as shown in Figure 1, from bottom to up successively including: the face N
Electrode 1, substrate 2, N-type DBR3, active area 4, oxidation limiting layer 5, p-type DBR6, p side electrode 7；The p-type DBR6 is column platform
Face, the center of the table top are equipped with oxidation hole 61, and the table top includes gap 63, and multiple gap 63 are around the oxidation
Hole 61 is uniformly distributed.
Oxidation depth is the vertex of the gap 63 to the distance in the oxidation hole 61, and the oxidation depth is less than described
The radius in face.The gap 63 carries out even partition to the p side electrode 7.Remove the area of the table top in the oxidation hole 61
Domain (i.e. non-oxide bore region table top 62) is greater than the region of the p side electrode 7.
As shown in Fig. 2, legend scheme is with cylindrical mesa, for arch gap.Cylindrical stage is not limited in practical application
Face and arch gap.Table top as shown in Figure 2 is by optimization, includes several equally distributed gap 63.Due to
The isotropism of oxidation, the oxidation depth of such table top be reduced to the arched top of the gap 63 to the oxidation hole 61 away from
From, greatly reduce the depth of oxidation, saved oxidation cost, while can reduce oxidation after insulating layer edge electric current it is close
Degree, reducing a series of current density unevenness influences laser bring.
The arc side of the gap 63 can be standard round arc, or parabola or other curves.
As shown in figure 3, providing a specific embodiment, in this embodiment, the radius of the table top is 14um, described
The radius for aoxidizing hole is 8um, and the oxidation depth is 2um, and the radius of the gap is 4um, and the quantity of the gap is 9,
The distance between multiple described gap are 1.75um.
Correspondingly, the production of planar laser with vertical cavity the following steps are included:
1, epitaxial wafer clean: in VCSELs technical process, the cleaning process of epitaxial wafer be in VCSELs element manufacturing most
It is simple but it is also most important link, it with device making technics each step.It is paid particular attention to when cleaning
It is that cannot cause to damage to epitaxial wafer surface texture, avoids the occurrence of very deep scratch as far as possible, the chip surface cleaned should light
Bright, smooth, free from admixture pollution.Water-bath cleaning is used before photoetching, wiping uses before growing optics film and metal electrode
Acid, alkali weak solution removal oxide on surface film etc..Usually used reagent has a carbon tetrachloride, trichloro ethylene, acetone, ethyl alcohol,
Hydrochloric acid, ammonium hydroxide etc..
2, ultraviolet contact exposure machine, by the pattern transfer to epitaxial wafer on photolithography plate, first time photoetching photoetching: are used
When to make full use of the structured part of epitaxial wafer, be carved into the figure of photolithography plate is more as far as possible on chip, after photoetching is complete, obtain
The pattern of cleaning is best.
3, ICP etches table top: under the protection of photoresist, etches into and just just exposed high aluminium layer, it is wet to carry out
Method selective oxidation.The epitaxial wafer for having etched table top will be cleaned thoroughly, and wet oxidation is prepared.
4, wet selective aoxidizes: in the case where temperature is 420 DEG C, the vapor that the N2 of 1.5L/min carries certain temperature is carried out
Selective wet oxidation, oxidation depth are controlled by the time, and suitable oxide-aperture is selected to advantageously reduce the threshold value of device, are improved
The output power of device.
5, BCB is passivated chip: the BCB insulating film for being passivated even compact is conducive to the performance that device improves device,
Extend the service life of device.
6, the preparation of light-emitting surface anti-reflection film.
7, the production of p side electrode, electron beam evaporation Ti-Pt-Au.
8, to p side electrode progress plating, increase the thickness of surface layer gold, then send reduction processing.
9, after reduction processing, the face N electrode fabrication: vacuum coating machine equipment thermal evaporation Ge-Au-Ni-Au.
10, alloy: the epitaxial wafer for having made the face N electrode is placed in NMP and removes and then be put into RTP-500 rapid thermal treatment
380 DEG C alloy 60 seconds in device.
To sum up, the utility model is precisely controlled difficulty for vertical cavity surface emitting laser in the prior art oxidation, in side
Various problems brought by the phenomenon that the current density at the edge of insulating layer can be higher than central area after oxidation, to mesa shape
It optimizes, on the one hand gos deep into reducing oxidation depth to oxidation hole by gap, improve the accuracy of oxidation, on the other hand
The introducing of gap can reduce the current density at the edge of insulating layer after aoxidizing.
It should be noted last that the above specific embodiment is only to illustrate the technical solution of the utility model rather than limits
System, although the utility model is described in detail referring to example, those skilled in the art should understand that, it can be right
The technical solution of the utility model is modified or replaced equivalently, without departing from the spirit and model of technical solutions of the utility model
It encloses, should all cover in the scope of the claims of the utility model.
Claims (6)
1. a kind of oxidized form planar laser with vertical cavity, which is characterized in that from bottom to up successively include: the face N electrode, substrate, N-type
DBR, active area, oxidation limiting layer, p-type DBR, p side electrode；
The p-type DBR is column table top, and the center of the table top is equipped with oxidation hole, and the table top includes gap, multiple described
Gap is uniformly distributed around the oxidation hole.
2. oxidized form planar laser with vertical cavity according to claim 1, which is characterized in that oxidation depth is the gap
Distance of the vertex to the oxidation hole, radius of the oxidation depth less than the table top.
3. oxidized form planar laser with vertical cavity according to claim 1, which is characterized in that the gap is to the face the P electricity
Pole carries out even partition.
4. oxidized form planar laser with vertical cavity according to claim 1, which is characterized in that remove the described of the oxidation hole
The region of table top is greater than the region of the p side electrode.
5. oxidized form planar laser with vertical cavity according to claim 2, which is characterized in that the arc side of the gap is standard
Circular arc.
6. oxidized form planar laser with vertical cavity according to claim 5, which is characterized in that the radius of the table top is
14um, the radius in the oxidation hole are 8um, and the oxidation depth is 2um, and the radius of the gap is 4um, the number of the gap
Amount is 9, and the distance between multiple described gap are 1.75um.
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| CN201821479837.9U CN208723310U (en) | 2018-09-11 | 2018-09-11 | A kind of oxidized form planar laser with vertical cavity |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110829179A (en) * | 2019-12-11 | 2020-02-21 | 长春中科长光时空光电技术有限公司 | Vertical cavity surface emitting laser and manufacturing method thereof |
| CN112003124A (en) * | 2020-09-02 | 2020-11-27 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
| CN113794106A (en) * | 2021-08-05 | 2021-12-14 | 威科赛乐微电子股份有限公司 | Method for improving VCSEL (vertical cavity surface emitting laser) oxidation aperture uniformity |
| CN116742475A (en) * | 2023-07-14 | 2023-09-12 | 江苏华兴激光科技有限公司 | Narrow linewidth vertical cavity surface emitting laser |
-
2018
- 2018-09-11 CN CN201821479837.9U patent/CN208723310U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110829179A (en) * | 2019-12-11 | 2020-02-21 | 长春中科长光时空光电技术有限公司 | Vertical cavity surface emitting laser and manufacturing method thereof |
| CN112003124A (en) * | 2020-09-02 | 2020-11-27 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
| CN112003124B (en) * | 2020-09-02 | 2021-07-02 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
| CN113794106A (en) * | 2021-08-05 | 2021-12-14 | 威科赛乐微电子股份有限公司 | Method for improving VCSEL (vertical cavity surface emitting laser) oxidation aperture uniformity |
| CN116742475A (en) * | 2023-07-14 | 2023-09-12 | 江苏华兴激光科技有限公司 | Narrow linewidth vertical cavity surface emitting laser |
| CN116742475B (en) * | 2023-07-14 | 2024-01-23 | 江苏华兴激光科技有限公司 | Narrow linewidth vertical cavity surface emitting laser |
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