CN102790354B - Vertical-cavity surface-emitting laser and production method thereof - Google Patents
Vertical-cavity surface-emitting laser and production method thereof Download PDFInfo
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- CN102790354B CN102790354B CN201210279632.7A CN201210279632A CN102790354B CN 102790354 B CN102790354 B CN 102790354B CN 201210279632 A CN201210279632 A CN 201210279632A CN 102790354 B CN102790354 B CN 102790354B
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Abstract
The invention relates to a vertical-cavity surface-emitting laser and a production method thereof. The vertical-cavity surface-emitting laser comprises a negative-side (n) electrode, a gallium arsenide (GaAs) substrate, a buffering layer, an n-type distribution bragg reflection (DBR) layer, an oxidized limiting layer, an active area, a passivation layer, a positive (p)-type DBR layer and an ohm contact layer. According to the vertical-cavity surface-emitting laser and the production method thereof, the circular oxidation limiting layer is oxidized to a grate stripe shape through a given process, so that injection of isotropous current can be broken through, and the polarization control of two orthogonal polarization light is realized by injecting the anisotropic current to the active area. In addition, the vertical-cavity surface-emitting laser is simple in structure and manufacturing process, good in repeatability and easy to popularize.
Description
Technical field
The invention belongs to Semiconductor Optic Electronics technical field, be specifically related to a kind of vertical cavity surface emitting laser and preparation method thereof.
Background technology
The high power of vertical cavity surface emitting laser, single longitudinal mode, output circular light spot, long-life are easy to the two dimension feature such as integrated in addition, make the business application of high-power vertical cavity surface emitting laser more and more extensive, especially former at field of telecommunications, laser display field, laser ignition, pumping and laser processing etc.Through whole world persevering endeavors decades, it is increasing that the market of VCSEL is becoming.The high threshold current of high-power vertical cavity surface emitting laser, the shortcomings such as low photoelectric conversion efficiency to well improving.For a long time, vertical-cavity-face emitting semiconductor laser (VCSEL), always in lower power levels, makes the application of this device be subject to great restriction.The development of several years up to date VCSEL Material growths and technology of preparing just makes its power level start to be greatly enhanced, thereby has opened up wide prospect for the application development of VCSEL laser.But, along with VCSEL laser power is constantly improved, it is day by day urgent and important that the solution of its zlasing mode problem becomes, because the up to the present raising of VCSEL laser power does not only improve zlasing mode, and on basic mode, produces adverse influence obtaining.This has restricted equally VCSEL laser and has played a role in a lot of important applied field.Therefore, must solve its optical mode problem and can develop the high-quality VCSEL laser that is really suitable for application in solving VCSEL laser power problem, this is an important problem of at present domestic and international semiconductor laser field face.And this project proposes a kind of new research ideas and methods first in order to solve single this international advanced subject of transverse mode list polarization problem of high-power V CSEL laser just, we expect can disclose by the work of this project the physical mechanism that VCSEL laser list transverse mode list polarization forms, and make a breakthrough realizing on high power VCSEL laser.This is for the application of development VCSEL laser, particularly aspect solving the needed high-quality microlasers of application such as miniature load laser ranging in space exploration technology, space communication, target recognition and tracking guidance, has great importance.
Since the appearance of side oxidation limiting structure, threshold current, modulating speed and the photoelectric conversion efficiency of device are very significantly improved.Seemed the almost Perfect of this structural expression, but this structure also exists the defect that self cannot eliminate, and that is exactly in the side oxidation phenomenon that the current density at the edge of insulating barrier can be higher than central area afterwards.Cannot eliminate the overlapping phenomenon of gain of optical mode, even if electric current evenly injects oxidation limiting layer is perfect, most of electric current is also concentrated on oxidation limiting layer border, be mainly because area be radius square relation.Therefore optical mode reaches maximum at center, and such result will cause the reduction of increase, the efficiency of the threshold current of aperture 10 μ m and above device to also have more serious that spatial hole burning becomes.Even if aperture narrows down to the single mode size of 3 μ m left and right, overlapping can improve but this defect still can not be eliminated of gaining, thus thereby in several micrometer ranges of charge carrier outside small-bore, diffusion has increased threshold current and parasitic capacitance scattering of light is also extended accordingly.
Summary of the invention
The present invention is directed to the shortcoming that vertical cavity surface emitting laser of the prior art has polarization switch effect, proposing one is oxidized without etched mesa without side, can solve the overlapping defect of gain can impressed current linear injection of optical mode, vertical cavity surface emitting laser and preparation method thereof.
For achieving the above object, the technical scheme of vertical cavity surface emitting laser of the present invention and preparation method thereof is specific as follows:
A kind of vertical cavity surface emitting laser, is from top to bottom followed successively by: substrate, resilient coating, N-type distribution Bragg reflector group, active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer;
Carrier injection aperture in described oxidation limiting layer be shaped as the spaced grating fringe shape in transparent area and light tight district.
In technique scheme, the grating fringe width in described carrier injection aperture is 0.5-1.5 μ m.
In technique scheme, described active area comprises: space layer and active region.
In technique scheme, described oxidation limiting layer is AlAs layer.
In technique scheme, the outside of described active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer, being equipped with thickness is the AlN passivation layer of 100～250nm.
The manufacture method of the vertical cavity surface emitting laser described in technique scheme, the formation of the oxidation limiting layer of this vertical cavity surface emitting laser comprises the following steps:
Step I: go out to be oxidized limiting layer by photoetching formation;
Step I i: silicon dioxide thin film growth above described oxidation limiting layer, is then lithographically grating fringe shape;
Step I ii: described oxidation limiting layer is oxidized, forms the carrier injection aperture of grating fringe shape;
Step I v: get rid of the described silica membrane forming in step I i.
In technique scheme, the oxidation depth in described step I ii, described circular oxidation limiting layer being oxidized is the thickness of described oxidation limiting layer.
In technique scheme, in described step I i, above described circular oxidation limiting layer, the thickness of silicon dioxide thin film growth is 50～250nm.
The beneficial effect of vertical cavity surface emitting laser of the present invention and preparation method thereof is:
Vertical cavity surface emitting laser of the present invention and preparation method thereof, by changing traditional annular oxidation limiting layer structure, circular oxide layer is oxidized to grating fringe shape, energy impressed current is injected into the mode of active area, reach the non-homogeneous injection of electric current, and then realize the Polarization Control of two mutually orthogonal polarised lights.The mode that this electric current injects can effectively be eliminated isotropism electric current and inject the polarization switch effect occurring because of mode competition of two crossed polarized lights bringing.
Vertical cavity surface emitting laser of the present invention, without side oxidation, without etched mesa, only need make small electrode at P face.
In addition, vertical-cavity surface emitting laser structure manufacturing process of the present invention is simple and direct, reproducible, easily promotes.
Brief description of the drawings
Fig. 1 is the structural representation of a kind of embodiment of vertical cavity surface emitting laser of the present invention.
Fig. 2 is the electric current distribution curve synoptic diagram on VCSEL of the prior art active area.
Fig. 3 is the electric current distribution curve synoptic diagram on VCSEL of the present invention active area.
Reference numeral in figure is expressed as:
1-N face electrode; 2-substrate; 3-resilient coating; 4-N type distribution Bragg reflector group; 5-is oxidized limiting layer; 61,62-space layer; 7-active region; 8-passivation layer; 9-P type distribution Bragg reflector group; 10-ohmic contact layer; 11-P face electrode.
Embodiment
The invention thought of vertical cavity surface emitting laser of the present invention and preparation method thereof is:
Vertical cavity surface emitting laser of the present invention, is from top to bottom followed successively by: substrate, resilient coating, N-type distribution Bragg reflector group, active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer; Carrier injection aperture in described oxidation limiting layer be shaped as the spaced grating fringe shape in transparent area and light tight district.
The manufacture method of vertical cavity surface emitting laser of the present invention, the formation of the oxidation limiting layer of this vertical cavity surface emitting laser comprises the following steps:
Step I: go out to be oxidized limiting layer by photoetching formation;
Step I i: silicon dioxide thin film growth above described oxidation limiting layer, is then lithographically grating fringe shape;
Step I ii: described oxidation limiting layer is oxidized, forms the carrier injection aperture of grating fringe shape;
Step I v: get rid of the described silica membrane forming in step I i.
As shown in the above, vertical cavity surface emitting laser of the present invention and preparation method thereof, by changing traditional annular oxidation limiting layer structure, circular oxide layer is oxidized to grating fringe shape, energy impressed current is injected into the mode of active area, reach the non-homogeneous injection of electric current, and then realize the Polarization Control of two mutually orthogonal polarised lights.The mode that this electric current injects can effectively be eliminated isotropism electric current and inject the polarization switch effect occurring because of mode competition of two crossed polarized lights bringing.Vertical cavity surface emitting laser of the present invention, without side oxidation, without etched mesa, only need make small electrode at P face.In addition, vertical-cavity surface emitting laser structure manufacturing process of the present invention is simple and direct, reproducible, easily promotes.
Below in conjunction with accompanying drawing, the embodiment of vertical cavity surface emitting laser of the present invention and preparation method thereof is described in further detail.
Fig. 1 has shown a kind of embodiment of vertical cavity surface emitting laser of the present invention and preparation method thereof.
The device architecture main body VCSEL part of vertical cavity surface emitting laser of the present invention is to be formed by MOCVD mono-secondary growth, and concrete structure is from top to bottom respectively: N face electrode 1, substrate 2, resilient coating 3, N-type distribution Bragg reflector group 4, active area (comprising space layer 61, active region 7 and space layer 62), oxidation limiting layer 5, P type distribution Bragg reflector group and ohmic contact layer 9, ohmic contact layer 10 and p side electrode 11.Wherein, the carrier injection aperture in described oxidation limiting layer 5 be shaped as the spaced grating fringe shape in transparent area and light tight district, grating fringe width is 0.5-1.5 μ m.
The manufacture method of vertical cavity surface emitting laser of the present invention comprises the following steps:
1. epitaxial wafer cleans: in VCSELs technical process, the cleaning process of epitaxial wafer is the simplest in VCSELs element manufacturing but the while is also most important link, and it is along with each step of device making technics.What when cleaning, pay particular attention to is to cause damage to epitaxial wafer surface texture, avoid occurring very dark cut as far as possible, otherwise the later stage can be difficult to process, the chip surface having cleaned should light, level and smooth, free from admixture pollutes.Through repeatedly repeating experimental study, we sum up the cleaning method of a set of efficient epitaxial wafer, before photoetching, have adopted water-bath cleaning, and wiping adopted acid, alkali weak solution to remove oxide on surface film etc. before growing optics film and metal electrode.In laboratory, our normally used reagent has carbon tetrachloride, trichloroethylene, acetone, ethanol, alkene hydrochloric acid, ammoniacal liquor etc.
2. an epitaxial surface growth silicon dioxide, the thickness of growth silicon dioxide is 50～250nm, too thick easily in the process of heating, rupture, too thin in the oxidizing process of oxidation limiting layer easily generation steam leak into aluminium arsenide surface by silicon dioxide result easily caused to bad consequence.
3. by reactive ion beam etching (RIBE), silicon dioxide being etched into the cycle is 0.5～1.5 micron (μ grating m), etching depth is for running through completely.
4. in accurate oxidation furnace, jin is oxidized grating, and the thickness that oxidation depth and side oxidation depth are aluminium arsenide, will exceed aluminium arsenide thickness too many scarcely, in case Carrier Injection Efficiency is too low, affects luminous power.
5. erode silicon dioxide, in experimenting, we find out that, and hydrogen fluoride also has corrosiveness to aluminium arsenide, and therefore we will try one's best the proportioning of corrosive liquid is reduced in corrode silicon dioxide, and the corrosive liquid of low concentration can reduce the corrosive effect of aluminium arsenide.
6. secondary epitaxy, carefully carries out secondary epitaxy Material growth, continued growth P-DBRs(P type distribution Bragg reflector group 9 after clean surface) and cap rock.
7. attenuate: adopt the method for mechanical reduction, for the first time epitaxial wafer is thinned to 350～450 μ m, so that photoetching below, develop, baking, will avoid the scuffing to epitaxial wafer surface in thinning process, if there is very dark cut, be difficult to remove, can affect the performance of device.We adopt UNIPOL-802 type precise grinding polisher, use white alundum powder, will repeatedly adjust the evenness of polishing machine in thinning process, are conducive to like this planarization and the consistency of epitaxial wafer, and the epitaxial wafer evenness after attenuate is in the scope of ± 10 μ m.
8. photoetching: adopt ultraviolet contact exposure machine, figure on photolithography plate is transferred on epitaxial wafer, when photoetching for the first time, to make full use of epitaxial wafer and have the part of structure, being carved on chip more than the figure of photolithography plate is tried one's best, after photoetching is complete, the pattern that obtains cleaning is best, over-exposed or under-exposed all can be very large on photoetching for the second time impact below.
9. wet etched-mesa: under the protection of photoresist, use glacial acetic acid, hydrobromic acid; the mixed solution of potassium bichromate or use phosphoric acid, hydrogen peroxide, the mixed solution of water carries out wet etching; etch into and just in time just exposed high aluminium lamination, to carry out wet method selective oxidation.Find that through experiment the table top that the first mixed solution corrodes there will be " whipping " phenomenon, be unfavorable for current limit and the some optical confinement of oxide layer to device, and the complete table top of the second solution corrosion presents rhombus table top, this is because selective corrosion is relevant, particularly evident for minor diameter single tube.The epitaxial wafer that corrodes table top will clean thoroughly, prepares wet oxidation.
10. large area reactive sputtering AlN dielectric film: in order to prevent device short circuit in the time welding, the thickness of AlN closes important, and control growth thickness is 100～250nm.In the time of thinner thickness, easily there is pin hole, when welding, can produce leakage current, if surface stress is larger when AlN is thicker, when alloy, the Ohm contact electrode on surface easily comes off.The AlN dielectric film of growth even compact is conducive to the performance of device raising device, extends the life-span of device.In our technique, be all to take SiO2 to do passivation insulation in the past, because the thermal conductivity of SiO2 is too low, had a strong impact on the heat dispersion of VCSEL, the particularly heat dispersion of high power VCSEL, and then can make device efficiency reduce, power reduction, the lost of life.
11. 2 attenuated polishings: in order to reduce substrate to scattering of light loss, epitaxial wafer is carried out to attenuate for the second time, thickness is reduced to 120～170 μ m, then use silica suspension to carry out polishing, the surface scattering loss of device can be reduced in the surface of level and smooth light, is conducive to restriction diffusion wet etching and makes lenticule.
12.N face is made electrode: utilize dissimilar photoresist to prepare inverted trapezoidal on lenticular surface, then utilize DM-450A type vacuum coating machine equipment thermal evaporation Ge-Au-Ni-Au, the quality of inverted trapezoidal directly can affect the shape of light-emitting window, in order to obtain high-quality inverted trapezoidal, select suitable photoresist most important, sample is placed in baking oven to post bake after photoetching is complete 40 minutes, exactly in order to keep the integrality of inverted trapezoidal.
13. alloys: the epitaxial wafer of having made N face electrode is placed on to the gold layer of peeling off window in acetone, window is exposed, be then put in RTP-500 rapid thermal process apparatus alloy 60 seconds.
14. chip cleavage encapsulation: by chip cleavage, adopt P face fall the mode of encapsulation be welded on oxygen-free copper heat sink on.On N face electrode, utilize gold wire bonder lead-in wire, be encapsulated into TO-3.
In order to study the inhomogeneities that electric current that grating introduces injects, the inhomogeneities of the CURRENT DISTRIBUTION causing is carried out sunykatuib analysis electric current distribution by multiple physical field finite element analysis software (comsol multiphysic).Fig. 3 is the electric current distribution curve on active area.Fig. 2 is the electric current distribution curve on the common VCSEL active area that there is no optical grating construction of the prior art.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all execution modes.And the apparent variation of being extended out thus or variation are still among the protection range in the invention.
Claims (1)
1. a manufacture method for vertical cavity surface emitting laser, is from top to bottom followed successively by: substrate, resilient coating, N-type distribution Bragg reflector group, active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer; It is characterized in that,
Carrier injection aperture in described oxidation limiting layer be shaped as the spaced grating fringe shape in transparent area and light tight district; The grating fringe width in described carrier injection aperture is 0.5-1.5 μ m;
Described active area comprises: space layer and active region; Described oxidation limiting layer is AlAs layer;
The outside of described active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer, being equipped with thickness is the AlN passivation layer of 100～250nm;
The formation of the oxidation limiting layer of this vertical cavity surface emitting laser comprises the following steps:
Step I: go out to be oxidized limiting layer by photoetching formation;
Step I i: silicon dioxide thin film growth above described oxidation limiting layer, is then lithographically grating fringe shape; Above described oxidation limiting layer, the thickness of silicon dioxide thin film growth is 50～250nm;
Step I ii: described oxidation limiting layer is oxidized, forms the carrier injection aperture of grating fringe shape; The oxidation depth that described oxidation limiting layer is oxidized is the thickness of described oxidation limiting layer;
Step I v: get rid of the described silica membrane forming in step I i.
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| CN104319628B (en) * | 2014-10-24 | 2018-04-27 | 中国科学院长春光学精密机械与物理研究所 | Outer cavity coherent vertical-cavity-face emitting semiconductor laser |
| CN104319627B (en) * | 2014-10-24 | 2017-07-25 | 中国科学院长春光学精密机械与物理研究所 | Second order grating is concerned with vertical-cavity-face emitting semiconductor laser |
| CN106654856B (en) * | 2017-02-28 | 2020-06-30 | 武汉光迅科技股份有限公司 | Vertical cavity surface laser and manufacturing method thereof |
| CN108847573B (en) * | 2018-06-27 | 2021-06-01 | 湖北光安伦芯片有限公司 | Vertical cavity surface emitting laser and manufacturing method thereof |
| CN113644546B (en) * | 2020-09-02 | 2022-06-10 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
| CN112993750B (en) * | 2021-01-28 | 2022-03-15 | 华芯半导体研究院(北京)有限公司 | VCSEL chip, preparation method thereof and laser scanning radar |
| CN113540971A (en) * | 2021-07-16 | 2021-10-22 | 中科启迪光电子科技(广州)有限公司 | Vertical cavity surface emitting laser with semi-annular symmetrical electrode structure |
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| CN101356703A (en) * | 2006-08-30 | 2009-01-28 | 株式会社理光 | Surface-emission laser diode, surface-emission laser diode array, optical scanning apparatus and image forming apparatus |
| CN101521353A (en) * | 2009-04-08 | 2009-09-02 | 中国科学院长春光学精密机械与物理研究所 | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization through emergent light window electrode structure |
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| US20040105476A1 (en) * | 2002-08-19 | 2004-06-03 | Wasserbauer John G. | Planar waveguide surface emitting laser and photonic integrated circuit |
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| CN101356703A (en) * | 2006-08-30 | 2009-01-28 | 株式会社理光 | Surface-emission laser diode, surface-emission laser diode array, optical scanning apparatus and image forming apparatus |
| CN101521353A (en) * | 2009-04-08 | 2009-09-02 | 中国科学院长春光学精密机械与物理研究所 | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization through emergent light window electrode structure |
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