CN110829179A - Vertical cavity surface emitting laser and manufacturing method thereof - Google Patents
Vertical cavity surface emitting laser and manufacturing method thereof Download PDFInfo
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- CN110829179A CN110829179A CN201911268050.7A CN201911268050A CN110829179A CN 110829179 A CN110829179 A CN 110829179A CN 201911268050 A CN201911268050 A CN 201911268050A CN 110829179 A CN110829179 A CN 110829179A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000002347 injection Methods 0.000 claims abstract description 23
- 239000007924 injection Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Semiconductor Lasers (AREA)
Abstract
The application discloses a vertical cavity surface emitting laser, which comprises a vertical cavity surface emitting laser component, a first insulating layer positioned on the surface of the vertical cavity surface emitting laser component, and a heating component positioned on the upper surface of the first insulating layer; the heating assembly comprises a metal layer, a wiring pad and a lead for connecting the metal layer and the wiring pad; the vertical cavity surface emitting laser component comprises an N-type back electrode, a substrate, an N-surface DBR layer, a protruding structure, a second insulating layer and a P-type injection electrode, wherein the N-type back electrode, the substrate, the N-surface DBR layer and the protruding structure are sequentially distributed from bottom to top, the protruding structure is located in a first preset region of the upper surface of the N-surface DBR layer, the second insulating layer is distributed on the upper surface of the N-surface DBR layer, the first preset region, the side surface of the protruding structure and a second preset region of the upper surface of the protruding structure. The heating assembly has small volume, simple structure and low cost, so that the laser has small volume and can reduce the complexity and the cost. In addition, the application also provides a manufacturing method with the advantages.
Description
Technical Field
The present disclosure relates to the field of semiconductor laser technology, and more particularly, to a vertical cavity surface emitting laser and a method for fabricating the same.
Background
A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a Laser with a light-Emitting direction perpendicular to the Surface of a resonant Cavity, has the advantages of small threshold current, small divergence angle, circularly symmetric light spot, easy two-dimensional integration and the like, and is widely applied to the fields of optical interconnection, optical storage, optical communication and the like.
When the VCSEL is applied to an atomic sensor (atomic clock, atomic gyroscope, magnetometer), etc., it is necessary to output laser light of a certain power at a high temperature. In order to ensure that the laser wavelength of the VCSEL meets the requirement of the central wavelength corresponding to the atomic vapor absorption spectral line in the atomic sensor under the working current, the laser wavelength of the VCSEL can be adjusted by adjusting the working temperature of the VCSEL, and the requirement of a system on the laser wavelength is further met. The VCSEL is heated by a separate heating device, the VCSEL is firstly packaged on the surface of a tube shell, then the tube shell with the VCSEL is attached to the heating device, the VCSEL is heated by heating the laser tube shell, and finally the laser wavelength is adjusted according to the temperature drift characteristic (0.06 nm/DEG C) of the VCSEL. The added heating equipment increases the complexity of the system, so that the volume of the system becomes large, the requirements of miniaturization and miniaturization cannot be met, and the added heating equipment is high in cost.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The invention aims to provide a vertical cavity surface emitting laser and a manufacturing method thereof, which can heat the vertical cavity surface emitting laser, reduce the volume of the vertical cavity surface emitting laser and reduce the cost.
In order to solve the above technical problem, the present application provides a vertical cavity surface emitting laser, including a vertical cavity surface emitting laser component, a first insulating layer located on a surface of the vertical cavity surface emitting laser component, and a heating component located on an upper surface of the first insulating layer;
the heating assembly comprises a metal layer, a wiring pad and a lead wire for connecting the metal layer and the wiring pad; vertical cavity surface emitting laser subassembly includes from supreme N type back electrode, substrate, the N face DBR layer that distributes in proper order down, is located the first protruding structure of predetermineeing the region of N face DBR layer upper surface, and distribute and be in N face DBR layer upper surface removes first predetermineeing the region protruding structure side protruding structure upper surface second predetermines regional second insulating layer, and distributes and be in the electrode is annotated to the P type of second insulating layer surface.
Optionally, the first insulating layer is located on the upper surface of the protruding structure.
Optionally, the first insulating layer is located in a third preset region of the P-type injection electrode, where the third preset region corresponds to a region of the upper surface of the N-plane DBR layer other than the first preset region.
Optionally, the first insulating layer is any one of a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer.
Optionally, the metal layer is a round-trip annular metal layer.
Optionally, the substrate is a gallium arsenide substrate.
The application also provides a method for manufacturing the vertical cavity surface emitting laser, which comprises the following steps:
growing an N-face DBR layer on the upper surface of the substrate;
growing a convex structure in a first preset region on the upper surface of the N-side DBR layer;
growing a second insulating layer on the upper surface of the N-surface DBR layer except the first preset region, the side surface of the locking protruding structure and the second preset region on the upper surface of the protruding structure;
growing a P-type injection electrode on the outer surface of the second insulating layer to obtain a vertical cavity surface emitting laser component;
growing a first insulating layer on the surface of the vertical cavity surface emitting laser assembly;
a metal layer, a wiring pad and a lead wire for connecting the metal layer and the wiring pad are formed on the upper surface of the first insulating layer;
and growing an N-type back electrode on the lower surface of the substrate.
Optionally, the growing a convex structure on the upper surface of the N-face DBR layer includes:
growing an epitaxial wafer on the upper surface of the N-side DBR layer;
etching the epitaxial wafer by adopting a photoetching technology to obtain a pretreatment convex structure, wherein the pretreatment convex structure comprises a first space layer, an active layer, a second space layer, an oxide layer to be oxidized and a P-surface DBR layer which are sequentially stacked from bottom to top;
oxidizing the oxide layer to be oxidized to obtain an oxide layer;
and manufacturing a current injection hole in the oxide layer to obtain the convex structure.
Optionally, the growing a first insulating layer on the surface of the vcsel module includes:
and growing the first insulating layer on the upper surface of the protruding structure.
Optionally, the growing a first insulating layer on the surface of the vcsel module includes:
and growing the first insulating layer in a third preset region of the P-type injection electrode, wherein the third preset region corresponds to a region of the upper surface of the N-surface DBR layer except the first preset region.
The vertical cavity surface emitting laser comprises a vertical cavity surface emitting laser component, a first insulating layer positioned on the surface of the vertical cavity surface emitting laser component, and a heating component positioned on the upper surface of the first insulating layer; the heating assembly comprises a metal layer, a wiring pad and a lead wire for connecting the metal layer and the wiring pad; vertical cavity surface emitting laser subassembly includes from supreme N type back electrode, substrate, the N face DBR layer that distributes in proper order down, is located the first protruding structure of predetermineeing the region of N face DBR layer upper surface, and distributes N face DBR layer upper surface removes the first region of predetermineeing, protruding structure side, protruding structure upper surface second predetermines regional second insulating layer, and distributes and be in the electrode is annotated to the P type of second insulating layer surface.
It can be seen that the vcsel in the present application includes a vcsel module, a first insulating layer and a heating module, wherein the heating module includes a metal layer, a wiring pad and a conductive trace, the vcsel module includes an N-type back electrode, a substrate, an N-type DBR layer, a protrusion structure located in a first predetermined region on an upper surface of the N-type DBR layer, a second insulating layer, and a P-type injection electrode, when the vcsel needs to be increased in temperature, a current is applied to the heating module, the current flows through the metal layer to generate heat energy, the heat energy is diffused from the metal layer to the vcsel module, so as to increase the vcsel temperature, and since the heating module includes the metal layer, the wiring pad and the conductive trace, the entire heating module has a small volume, a simple structure and a low cost, so that the vcsel has a small volume, the development trend of miniaturization is satisfied, and simultaneously the complexity and the manufacturing cost of the vertical cavity surface emitting laser can be reduced. In addition, the application also provides a manufacturing method with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser according to an embodiment of the present disclosure;
FIG. 2 is a top view of a VCSEL provided in an embodiment of the present application;
FIG. 3 is a schematic structural diagram of another VCSEL provided in an embodiment of the present application;
FIG. 4 is a top view of another VCSEL provided in an embodiment of the present application;
FIG. 5 is a flowchart of a method for fabricating a VCSEL according to an embodiment of the present disclosure;
in the drawing, 1, a vertical cavity surface emitting laser element, 2, a first insulating layer, 3, a heating element, 4, a current injection region, 5, a light exit port, 11, an N-type back electrode, 12, a substrate, 13, an N-side DBR layer, 14, a bump structure, 15, a second insulating layer, 16, a P-type injection electrode, 31, a metal layer, 33, a wiring pad, 32, a wiring, 141, a first spatial layer, 142, an active layer, 143, a second spatial layer, 144, an oxide layer, 145, and a P-side DBR layer are illustrated.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, heating of VCSELs currently requires heating the VCSELs by a separate heating device, which first packages the VCSELs on the surface of a package, and then attaches the package with the VCSELs to the heating device to heat the VCSELs by heating the laser package. The added heating equipment increases the complexity of the system, so that the volume of the system becomes large, the requirements of miniaturization and miniaturization cannot be met, and the added heating equipment is high in cost.
In view of this, the present application provides a vertical cavity surface emitting laser, please refer to fig. 1, fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser provided in an embodiment of the present application, including a vertical cavity surface emitting laser component 1, a first insulating layer 2 located on a surface of the vertical cavity surface emitting laser component 1, and a heating component 3 located on an upper surface of the first insulating layer 2;
the heating assembly 3 comprises a metal layer 31, a wiring pad 33, and a wire 32 connecting the metal layer 31 and the wiring pad 33; vertical cavity surface emitting laser subassembly 1 includes from supreme N type back electrode 11, substrate 12, the N face DBR layer 13 that distributes in proper order down, is located the first protruding structure 14 of predetermineeing regional of N face DBR layer 13 upper surface, and distribute and be in N face DBR layer 13 upper surface removes first predetermine the region protruding structure 14 side the regional second insulating layer 15 is predetermine to protruding structure 14 upper surface second, and distributes and be in the P type injection electrode 16 of second insulating layer 15 surface.
Specifically, the bump structure 14 includes a first space layer 141, an active layer 142, a second space layer 143, an oxide layer 144, and a P-surface DBR (Distributed Bragg Reflector) layer 145, which are sequentially stacked from bottom to top, and a current injection hole is formed in the oxide layer 144. Wherein, the first and second spatial layers 141 and 143 may be, but are not limited to, Al0.3Ga0.7As。
In the present embodiment, the material of the metal layer 31 is not particularly limited as long as it can generate heat when current is applied. For example, the metal layer 31 may be a copper metal layer 31, or an iron metal layer 31, or the like.
In an embodiment of the present application, the metal layer 31 is a round-trip annular metal layer 31, but the present application is not limited thereto specifically, and in other embodiments of the present application, the metal layer 31 may also be a serpentine metal layer 31.
Further, in this embodiment, the sectional area of the metal layer 31 is not specifically limited, the resistance of the metal layer 31 is inversely proportional to the sectional area of the metal layer 31, the smaller the sectional area is, the larger the resistance of the metal layer 31 is, and when the current flowing into the metal layer 31 is constant, the more heat the metal layer 31 generates, the faster the temperature of the vcsel rises.
It should be noted that the number of the bonding pads 33 and the wires 32 is two, the two wires 32 are respectively connected to two ends of the metal layer 31, and the two bonding pads 33 are respectively connected to the two wires 32 for respectively leading in and leading out the current, because the diameter of the wires 32 is very small, such as a hairline, the current cannot be directly led in and led out, and the bonding pads 33 are needed.
The first insulating layer 2 in this embodiment is provided to separate the metal layer 31 and the electrode of the vcsel module 1 into independent electrical injection systems, so that the vcsel module 1 and the metal layer 31 can be independently powered. Wherein the current injection region 4 of the vertical cavity surface emitting laser assembly 1 is located in the second insulating layer 15.
Optionally, the first insulating layer 2 includes, but is not limited to, any one of a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer. Similarly, the second insulating layer 15 includes, but is not limited to, any one of a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer.
Optionally, in an embodiment of the present application, the substrate 12 is a gallium arsenide substrate 12.
It should be noted that the first predetermined region is generally a middle region of the upper surface of the N-plane DBR layer 13, but this is not limited thereto in the present application, as the case may be. The second predetermined area depends on the position of the first insulating layer 2, and will be described below.
The VCSEL in this embodiment includes a VCSEL component 1, a first insulating layer 2, and a heating component 3, wherein the heating component 3 includes a metal layer 31, a wiring pad 33, and a conductive line 32, the VCSEL component 1 includes an N-type back electrode 11, a substrate 12, an N-side DBR layer 13, a protruding structure 14 located in a first predetermined region on an upper surface of the N-side DBR layer 13, a second insulating layer 15, and a P-type injection electrode 16, when it is desired to raise the VCSEL temperature, a current is applied to the heating component 3, the current generates heat energy when flowing through the metal layer 31, and the heat is diffused from the metal layer 31 into the VCSEL component 1, thereby raising the VCSEL temperature, and since the heating component 3 includes the metal layer 31, the wiring pad 33, and the conductive line 32, the entire heating component 3 has a small volume, The structure is simple, the cost is low, so that the size of the vertical cavity surface emitting laser is small, the development trend of miniaturization is met, and meanwhile, the complexity and the manufacturing cost of the vertical cavity surface emitting laser can be reduced.
Based on the above embodiments, in an embodiment of the present application, the first insulating layer 2 is located on the upper surface of the protruding structure 14, as shown in fig. 1, at this time, the second predetermined area is a semicircular ring at the edge of the upper surface of the circular protruding structure 14, please refer to fig. 2.
On the basis of the above embodiments, in an embodiment of the present application, the first insulating layer 2 is located in a third predetermined region of the P-type injection electrode 16, wherein the third predetermined region corresponds to a region of the upper surface of the N-side DBR layer 13 except for the first predetermined region, as shown in fig. 3, and at this time, the second predetermined region is a ring at the edge of the upper surface of the circular protruding structure 14, please refer to fig. 4.
Referring to fig. 5, fig. 5 is a flowchart illustrating a method for fabricating a vertical cavity surface emitting laser according to an embodiment of the present disclosure, the method including:
step S101: an N-sided DBR layer is grown on the upper surface of the substrate.
Optionally, an N-plane DBR (distributed bragg Reflector) layer is grown on the upper surface of the substrate by using a metal organic chemical vapor deposition method.
Step S102: and growing a convex structure on a first preset region on the upper surface of the N-side DBR layer.
It should be noted that the first predetermined region is generally a middle region of the upper surface of the N-plane DBR layer, but this is not limited thereto in the present application as appropriate.
Specifically, the process of growing the protruding structure includes:
step S1021: and growing an epitaxial wafer on the upper surface of the N-side DBR layer.
The epitaxial wafer comprises a to-be-processed first spatial layer, a to-be-processed active layer, a to-be-processed second spatial layer, a to-be-processed oxide layer and a to-be-processed P-surface DBR layer which are sequentially stacked from bottom to top.
Step S1022: and etching the epitaxial wafer by adopting a photoetching technology to obtain a pretreatment convex structure, wherein the pretreatment convex structure comprises a first space layer, an active layer, a second space layer, a to-be-oxidized layer and a P-surface DBR layer which are sequentially stacked from bottom to top.
Specifically, the epitaxial wafer is exposed, developed and the like, then a mask with the same size and shape as the size and shape of the pretreatment convex structure is prepared, then the epitaxial wafer with the mask is etched, and the etching depth is increased until the second space layer is exposed, so that the pretreatment convex structure is obtained.
Step S1023: and oxidizing the oxide layer to be oxidized to obtain an oxide layer.
Optionally, the protrusion structure to be pretreated is placed in a wet oxidation furnace to oxidize an oxide layer to be oxidized to obtain an oxide layer, so as to form current limitation and light limitation, wherein the oxide layer to be oxidized is a high-alumina component layer.
Step S1024: and manufacturing a current injection hole in the oxide layer to obtain the convex structure.
Step S103: and growing a second insulating layer on the upper surface of the N-surface DBR layer except the first preset region, the side surface of the locking protruding structure and the second preset region on the upper surface of the protruding structure.
Optionally, a second insulating layer is grown by using a plasma enhanced chemical vapor deposition method. The second predetermined area depends on the position of the first insulating layer, and will be described below.
Step S104: and growing a P-type injection electrode on the outer surface of the second insulating layer to obtain the vertical cavity surface emitting laser component.
Optionally, a P-type injection electrode is grown on the outer surface of the second insulating layer by a sputtering method.
Step S105: and growing a first insulating layer on the surface of the vertical cavity surface emitting laser component.
Optionally, the first insulating layer is grown by plasma enhanced chemical vapor deposition.
It should be noted that, in this embodiment, the first insulating layer to be grown is not particularly limited,
step S106: and a metal layer, a wiring pad and a lead wire for connecting the metal layer and the wiring pad are formed on the upper surface of the first insulating layer.
Specifically, the metal layer, the wiring pad and the lead are formed by processes such as photoetching, metal film deposition, metal film stripping and the like.
In the present embodiment, the shape of the metal layer is not particularly limited, as appropriate. For example, the metal layer may be a round-trip annular metal layer or a serpentine metal layer.
Step S107: and growing an N-type back electrode on the lower surface of the substrate.
Optionally, an N-type back electrode is grown on the lower surface of the substrate by a sputtering method.
It should be noted that before growing the N-type back electrode, the substrate needs to be thinned to a desired thickness, and then the N-type back electrode is grown again.
The vcsel manufactured in this embodiment includes a vcsel assembly, a first insulating layer, and a heating assembly, wherein the heating assembly includes a metal layer, a wiring pad, and a conductive wire, the vcsel assembly includes an N-type back electrode, a substrate, an N-type DBR layer, a protrusion structure located in a first predetermined region on an upper surface of the N-type DBR layer, a second insulating layer, and a P-type injection electrode The cost is low, so that the volume of the vertical cavity surface emitting laser is small, the development trend of miniaturization is met, and meanwhile, the complexity and the manufacturing cost of the vertical cavity surface emitting laser can be reduced.
On the basis of the above embodiments, in an embodiment of the present application, the growing a first insulating layer on a surface of the vertical cavity surface emitting laser component includes:
and growing the first insulating layer on the upper surface of the protruding structure. At this time, the second predetermined area is a semicircular ring at the edge of the upper surface of the circular convex structure.
On the basis of the above embodiments, in an embodiment of the present application, the growing a first insulating layer on a surface of the vertical cavity surface emitting laser component includes:
and growing the first insulating layer in a third preset region of the P-type injection electrode, wherein the third preset region corresponds to a region of the upper surface of the N-surface DBR layer except the first preset region. At this time, the second predetermined area is a circular ring at the edge of the upper surface of the circular protrusion structure.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The vertical cavity surface emitting laser and the method for manufacturing the same provided by the present application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. A vertical cavity surface emitting laser is characterized by comprising a vertical cavity surface emitting laser component, a first insulating layer positioned on the surface of the vertical cavity surface emitting laser component, and a heating component positioned on the upper surface of the first insulating layer;
the heating assembly comprises a metal layer, a wiring pad and a lead wire for connecting the metal layer and the wiring pad; vertical cavity surface emitting laser subassembly includes from supreme N type back electrode, substrate, the N face DBR layer that distributes in proper order down, is located the first protruding structure of predetermineeing the region of N face DBR layer upper surface, and distribute and be in N face DBR layer upper surface removes first predetermineeing the region protruding structure side protruding structure upper surface second predetermines regional second insulating layer, and distributes and be in the electrode is annotated to the P type of second insulating layer surface.
2. A vertical cavity surface emitting laser according to claim 1, wherein said first insulating layer is on said convex structure upper surface.
3. A vertical cavity surface emitting laser according to claim 1, wherein said first insulating layer is located in a third predetermined region of said P-type injection electrode, wherein said third predetermined region corresponds to a region of the upper surface of said N-plane DBR layer other than said first predetermined region.
4. A vertical cavity surface emitting laser according to any one of claims 1 to 3, wherein said first insulating layer is any one of a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer.
5. A vertical cavity surface emitting laser according to claim 4, wherein said metal layer is a round-trip annular metal layer.
6. A vertical cavity surface emitting laser according to claim 5, wherein said substrate is a gallium arsenide substrate.
7. A method for manufacturing a vertical cavity surface emitting laser includes:
growing an N-face DBR layer on the upper surface of the substrate;
growing a convex structure in a first preset region on the upper surface of the N-side DBR layer;
growing a second insulating layer on the upper surface of the N-surface DBR layer except the first preset region, the side surface of the locking protruding structure and the second preset region on the upper surface of the protruding structure;
growing a P-type injection electrode on the outer surface of the second insulating layer to obtain a vertical cavity surface emitting laser component;
growing a first insulating layer on the surface of the vertical cavity surface emitting laser assembly;
a metal layer, a wiring pad and a lead wire for connecting the metal layer and the wiring pad are formed on the upper surface of the first insulating layer;
and growing an N-type back electrode on the lower surface of the substrate.
8. A method of fabricating a vertical cavity surface emitting laser according to claim 7, wherein said growing a convex structure on the upper surface of said N-plane DBR layer comprises:
growing an epitaxial wafer on the upper surface of the N-side DBR layer;
etching the epitaxial wafer by adopting a photoetching technology to obtain a pretreatment convex structure, wherein the pretreatment convex structure comprises a first space layer, an active layer, a second space layer, an oxide layer to be oxidized and a P-surface DBR layer which are sequentially stacked from bottom to top;
oxidizing the oxide layer to be oxidized to obtain an oxide layer;
and manufacturing a current injection hole in the oxide layer to obtain the convex structure.
9. A method according to claim 7 or 8, wherein growing a first insulating layer on the surface of the VCSEL component includes:
and growing the first insulating layer on the upper surface of the protruding structure.
10. A method according to claim 7 or 8, wherein growing a first insulating layer on the surface of the VCSEL component includes:
and growing the first insulating layer in a third preset region of the P-type injection electrode, wherein the third preset region corresponds to a region of the upper surface of the N-surface DBR layer except the first preset region.
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