CN116914559A - Tunable laser chip and preparation method thereof - Google Patents
Tunable laser chip and preparation method thereof Download PDFInfo
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- CN116914559A CN116914559A CN202311170902.5A CN202311170902A CN116914559A CN 116914559 A CN116914559 A CN 116914559A CN 202311170902 A CN202311170902 A CN 202311170902A CN 116914559 A CN116914559 A CN 116914559A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000002161 passivation Methods 0.000 claims description 29
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000013067 intermediate product Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a tunable laser chip and a preparation method thereof, wherein the tunable laser chip comprises a light outlet provided with an output light beam, the tunable laser chip comprises a base station part, a round platform part and a heating tuning structure, the round platform part is arranged on the base station part, and the heating tuning structure is arranged on the upper surface of the base station part and surrounds the periphery of the round platform part and is used for adjusting the wavelength tuning range of the output light beam of the light outlet by changing the temperature. According to the tunable laser chip, the heating tuning structure is arranged outside the round table part, so that the temperature in the laser chip can be changed, and the wavelength tuning range in the laser chip can be changed. The heating tuning mode and the current tuning mode are combined, so that the laser wavelength tuning range of the laser chip is wider, and the tuning process is stable and controllable.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a tunable laser chip and a preparation method thereof.
Background
Along with the rapid development of 5G/6G, the demand for tunable laser chips is higher and higher, and the tunable laser chip has important application value in the fields of tunable dense wavelength division multiplexing transmitters and receivers, dynamic wavelength routing, burst mode switching of optical data packets, channel wavelength metering, internet of things sensing, laser radar and the like.
Most of the current overseas tunable laser chips are based on thermal tuning, which has a slow tuning speed and is only single wavelength tuning.
Disclosure of Invention
The invention aims to provide a tunable laser chip and a preparation method thereof, which are used for realizing controllable and stable tuning of laser wavelength.
The invention discloses a tunable laser chip, which is provided with a light outlet for outputting light beams, wherein the tunable laser chip comprises a base station part, a round platform part and a heating tuning structure, the round platform part is arranged on the base station part, and the heating tuning structure is arranged on the upper surface of the base station part and surrounds the periphery of the round platform part and is used for adjusting the wavelength tuning range of the light beams output by the light outlet by changing the temperature.
Preferably, the light outlet is elliptical in shape and is used for outputting the light beams with double wavelengths.
Preferably, the base portion includes substrate layer, N type DBR layer and active layer from top to bottom in proper order, round platform portion includes P type DBR layer, round platform portion still is equipped with the oxidation limiting layer, the oxidation limiting layer is located between active layer and the P type DBR layer, be equipped with the electric current limiting hole on the oxidation limiting layer, the active layer passes through the electric current limiting hole to round platform portion upper surface direction vertical output light beam is in order to form the light outlet.
Preferably, the upper surface of the base station part, the upper surface of the round table part and the outer side wall of the round table part are all provided with passivation layers, the heating tuning structure is arranged outside the passivation layers, the passivation layers are provided with annular windows positioned on the upper surface of the round table part, and the light outlet is positioned in the annular windows.
Preferably, the tunable laser chip further includes a P-side electrode and an N-side electrode, where the P-side electrode is evaporated on the passivation layer and covers the annular window, so that the P-side electrode contacts with the P-type DBR layer; the N-face electrode is evaporated below the substrate layer.
Preferably, the P-surface electrode includes an internal connection part, an external connection part and a connection part, the internal connection part is evaporated on the annular window, the internal connection part is provided with a through hole for facilitating the light outlet to output light beams, and the external connection part is evaporated on the edge of the base part and is used for electrically connecting with a peripheral structure; the two ends of the connecting part are respectively connected with the inner connecting part and the outer connecting part.
Preferably, the heating tuning structure comprises an annular heating electrode and a square heating electrode, wherein the annular heating electrode and the square heating electrode are evaporated on the surface of the passivation layer, the annular heating electrode is arranged on the periphery of the round table part in a surrounding mode, one end of the square heating electrode is connected with the annular heating electrode, and the other end of the square heating electrode is connected with an external structure; the annular heating electrode is provided with a through groove which is used for avoiding interference with the P-face electrode, and the connecting part is evaporated on the passivation layer in the through groove.
The second aspect of the invention discloses a method for manufacturing a tunable laser chip, comprising the steps of:
preparing a tunable laser chip body, wherein the tunable laser chip body comprises a base station part and a round platform part, and the tunable laser chip body is provided with a light outlet for outputting light beams to the upper surface of the round platform part;
the base station part is vapor-deposited with a heating tuning structure, and the heating tuning structure is enclosed on the outer wall of the round station part and is used for adjusting the wavelength tuning range of the light beam output by the light outlet by changing the temperature.
Preferably, the preparing a tunable laser chip body includes:
cleaning the epitaxial wafer to ensure that the surface of the epitaxial wafer is free from stains and chemical residues;
etching the epitaxial wafer by using a dry etching process to form a round platform part and a base platform part on the epitaxial wafer; the base platform part comprises a substrate layer, an N-type DBR layer and an active layer from bottom to top;
performing side oxidation on the oxide layer by adopting a wet selective oxidation technology to form an elliptical current limiting hole, wherein the active layer vertically outputs a light beam to the upper surface direction of the round table part through the current limiting hole so as to form the light outlet;
and depositing transparent insulating substances on the surfaces of the round table part and the base part to serve as passivation layers, and etching annular windows on the surfaces of the passivation layers through etching technology, wherein the annular windows are arranged outside the light outlet in a surrounding mode.
Preferably, after the tunable laser chip body is prepared, the method further includes:
evaporating metal on the periphery of the passivation layer, which is positioned at the light outlet, to form a P-surface electrode, wherein the P-surface electrode fills and covers the annular window so as to be connected with a P-type DBR layer;
and evaporating metal on the substrate layer to form an N-face electrode.
The invention has the beneficial effects that:
according to the tunable laser chip, the heating tuning structure is arranged outside the round table part, so that the temperature in the laser chip can be changed, and the wavelength tuning range in the laser chip can be changed. The heating tuning mode and the current tuning mode are combined, so that the laser wavelength tuning range of the laser chip is wider, and the tuning process is stable and controllable.
Drawings
FIG. 1 is a schematic diagram of a tunable laser chip;
FIG. 2 is a topography of an oxidation-limited aperture of a tunable laser chip;
FIGS. 3-5 are graphs of test spectra after current is applied in different ways, respectively;
fig. 6-11 are schematic partial views of structural changes during the fabrication of a tunable laser chip.
Reference numerals illustrate:
10. an N-side electrode; 20. a substrate layer; 30. an N-type DBR layer; 40. an active layer; 50. an oxidation limiting layer; 51. an oxidation limiting hole; 60. a P-type DBR layer; 70. a P-plane electrode; 71. an inner joint part; 72. an external connection part; 73. a connection part; 80. heating the tuning structure; 81. an annular heating electrode; 82. square heating electrode; 90. a passivation layer; 91. an annular window; 101. and a light outlet.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc., are based on those shown in the drawings, are merely for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in the specific direction, and thus should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be the communication between the two parts. The specific meaning of the terms in the present invention will be understood by those of ordinary skill in the art in specific detail.
Referring to fig. 1, the tunable laser chip disclosed in the present embodiment is a vertical profile emitting laser, and includes, in order from bottom to top, an N-plane electrode 10, a substrate layer 20, an N-type DBR layer 30, an active layer 40, an oxidation-limiting layer 50, a P-type DBR layer 60, and a P-plane electrode 70. The etching shape of the laser comprises a truncated cone portion and a base portion, the base portion comprises a substrate layer 20, an N-type DBR layer 30 and an active layer 40 from bottom to top in sequence, the truncated cone portion comprises a P-type DBR layer 60, the truncated cone portion is further provided with an oxidation limiting layer 50, the oxidation limiting layer 50 is arranged between the active layer 40 and the P-type DBR layer 60, the oxidation limiting layer 50 is provided with a current limiting hole, and the active layer 40 vertically outputs a light beam to the upper surface direction of the truncated cone portion through the current limiting hole to form a light outlet 101.
The laser further comprises a heating tuning structure 80, wherein the heating tuning structure 80 is arranged on the upper surface of the base station part and surrounds the periphery of the round table part, and is used for adjusting the wavelength tuning range of the light beam output by the light outlet 101 by changing the temperature.
Specifically, the shape of the current limiting hole is elliptical, so that the shape of the light outlet 101 is elliptical, the elliptical shape is designed to control the mode of outputting the spectrum, the elliptical shape can output the spectrum of two wavelengths, the heating electrode is used for heating and tuning the drift of the two wavelengths, and the tunable laser wavelength output of the two wavelengths of the light outlet 101 can be realized.
Further, the passivation layer 90 is disposed on the upper surface of the base portion, the upper surface of the truncated cone portion and the outer side wall of the truncated cone portion, the heating tuning structure 80 is disposed on the passivation layer 90, the passivation layer 90 is provided with an annular window 91 disposed on the upper surface of the truncated cone portion, and the light outlet 101 is disposed in the annular window 91.
In this embodiment, the P-side electrode 70 is evaporated on the passivation layer 90 and covers the annular window 91, so that the P-side electrode 70 contacts the P-type DBR layer; the N-side electrode 10 is evaporated under the substrate layer 20.
Specifically, the P-surface electrode 70 includes an inner connection portion 71, an outer connection portion 72, and a connection portion 73, the inner connection portion 71 is vapor-deposited on the annular window 91, the inner connection portion 71 is provided with a through hole for facilitating the light beam output from the light outlet 101, and the outer connection portion 72 is vapor-deposited on the edge of the base portion for electrically connecting with the peripheral structure; both ends of the connection portion 73 are connected to the inner connection portion 71 and the outer connection portion 72, respectively. The inner joint part 71 has a circular shape, and the outer joint part 72 has a circular shape.
In this embodiment, the heating tuning structure 80 includes an annular heating electrode 81 and a square heating electrode 82 that are evaporated on the surface of the passivation layer 90, the annular heating electrode 81 is arranged around the periphery of the truncated cone portion, one end of the square heating electrode 82 is connected with the annular heating electrode 81, and the other end of the square heating electrode 82 is connected with an external structure; the annular heating electrode 81 has a through groove for avoiding interference with the P-surface electrode 70, and the connection portion 73 is vapor-deposited on the passivation layer 90 in the through groove. The square heating electrodes 82 include two square heating electrodes 82, and the two square heating electrodes 82 are respectively connected to different positions of the outer wall of the annular heating electrode 81 so as to be respectively connected with the positive electrode and the negative electrode of the external device.
It will be appreciated that in order to avoid contact between the P-side electrode 70 and the annular heating electrode 81, an open through groove is provided on the annular heating electrode 81 to facilitate vapor deposition of the P-side electrode 70. The through groove on the annular heating electrode 81 is a fan-shaped through groove, and the arc of the fan-shaped through groove is preferably 30-60 degrees.
Specific example designs are as follows:
tunable laser chip: the annular heating electrode 81 is designed as an annular opening, the width of the heating metal ring is 150 μm, and the size of the square electrode matched with the square heating electrode 82 is as follows: 90 μm by 90 μm; the maximum diameter of the inscription part 71 of the metal P-surface electrode 70 of the metal light-emitting hole is 10 μm, the inner light-emitting opening 101 has an elliptical structure, the maximum diameter of the ellipse is less than 4 μm in order to ensure the output of dual wavelength, and the radius of the circumscribed part 72 of the P-surface electrode 70 is 90 μm. The diameter of the circular ring window was set to 15 μm/22. Mu.m. The morphology of the oxidation limiting aperture 51 of the laser is shown in fig. 2, the maximum radius of the oxidation limiting aperture 51 is 1.9 μm, and the minimum radius is 1 μm.
The spectrum diagram when the square heating electrode 82 is connected with 0mA, and the P surface electrode 70 and the N surface electrode 10 are connected with 4mA for driving is shown in FIG. 3;
the spectrum diagram when the square heating electrode 82 is connected with 0mA, and the P surface electrode 70 and the N surface electrode 10 are connected with 5mA for driving is shown in FIG. 4;
the spectrum of the square heater electrode 82 with 10mA applied and the P-side electrode 70 and N-side electrode 10 with 4mA applied is shown in FIG. 5.
It can be concluded that the dual wavelength spectrum moves in the long wavelength direction at the same time as the current supplied to the P-side electrode 70 and the N-side electrode 10 increases with the supply of 0mA to the square heating electrode 82. The current applied to the P-side electrode 70 and the N-side electrode 10 is constant, and the spectrum of the dual wavelength shifts in the long wavelength direction after a fixed current is applied to the heating electrode. Therefore, the laser of the present embodiment can be tuned separately or together by adding the heating tuning structure 80, by current tuning and heating tuning.
The preparation method of the tunable laser chip comprises the following steps:
s100, a VCSEL laser chip, namely an epitaxial wafer, is epitaxially grown by a Plasma Enhanced Chemical Vapor Deposition (PECVD), the epitaxial wafer to be cleaned is cleaned according to an RCA standard, the epitaxial wafer is protected by high-purity nitrogen and dried after the cleaning is finished, and then the VCSEL laser chip to be processed is heated and dried for later use; the structure of the epitaxial wafer is shown in fig. 6;
s200, depositing or sputtering a SiO2 mask with a certain thickness on an epitaxial wafer to be processed; then, etching a truncated cone portion and a base portion on the epitaxial wafer by utilizing photoetching and etching technologies, wherein the truncated cone portion comprises a P-type DBR layer 60, and the base portion comprises a substrate layer 20, an N-type DBR layer 30 and an active layer 40 from bottom to top; removing excessive SiO2 by chemical etching, and cleaning; after cleaning, the chips are dried under the protection of high-purity nitrogen, and then heated and dried for later use; the resulting product is shown in FIG. 7;
s300, performing side oxidation on the oxide layer by adopting a wet selective oxidation technology to form an elliptical current limiting hole, and vertically outputting a light beam to the upper surface direction of the round table part through the current limiting hole by the active layer 40 to form a light outlet 101; the intermediate product is obtained as shown in fig. 8;
s400, depositing transparent insulating substances on the surfaces of the round table part and the base table part as a passivation layer 90, and etching an annular window 91 on the surface of the passivation layer 90 by an etching technology, wherein the annular window 91 is arranged outside the light outlet 101 in a surrounding manner; the intermediate product is obtained as shown in fig. 9;
s500, evaporating metal on the passivation layer 90 at the periphery of the light outlet 101 to form a P-surface electrode 70, wherein the P-surface electrode 70 fills and covers the annular window 91 so as to be connected with the P-type DBR layer 60; evaporating metal on the substrate layer 20 to form an N-face electrode 10; the intermediate product is obtained as shown in fig. 10;
the P-surface electrode 70 includes an inner connection portion 71, an outer connection portion 72, and a connection portion 73, the inner connection portion 71 is evaporated on the annular window 91, the inner connection portion 71 is provided with a through hole for facilitating the light beam output from the light outlet 101, and the outer connection portion 72 is evaporated on the edge of the base portion for electrically connecting with a peripheral structure;
and S600, evaporating the heating tuning structure 80 on the base part, wherein the heating tuning structure 80 is arranged on the outer wall of the round table part in a surrounding mode and is used for adjusting the wavelength tuning range of the light beam output by the light outlet 101 by changing the temperature. The heating tuning structure 80 comprises an annular heating electrode 81 and a square heating electrode 82, wherein the annular heating electrode 81 and the square heating electrode 82 are evaporated on the surface of the passivation layer 90, the annular heating electrode 81 is arranged on the periphery of the round table part in a surrounding mode, one end of the square heating electrode 82 is connected with the annular heating electrode 81, and the other end of the square heating electrode 82 is connected with an external structure; the annular heating electrode 81 is provided with a through groove for avoiding interference with the P-surface electrode 70, and the connecting part 73 is evaporated on the passivation layer 90 in the through groove; the intermediate product is obtained as shown in fig. 11.
The tunable laser chip of this scheme is through setting up heating tuning structure 80 outside the round platform portion, can change the temperature in the laser chip to change the wavelength tuning range in the laser chip. The heating tuning mode and the current tuning mode are combined, so that the laser wavelength tuning range of the laser chip is wider, and the tuning process is stable and controllable.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. The tunable laser chip is provided with a light outlet for outputting light beams and is characterized by comprising a base station part, a round table part and a heating tuning structure, wherein the round table part is arranged on the base station part, and the heating tuning structure is arranged on the upper surface of the base station part and surrounds the periphery of the round table part and is used for adjusting the wavelength tuning range of the light beams output by the light outlet by changing the temperature.
2. The tunable laser chip of claim 1, wherein the light outlet is elliptical in shape for outputting a dual wavelength light beam.
3. The tunable laser chip of claim 1, wherein the base portion includes a substrate layer, an N-type DBR layer, and an active layer in this order from below, the mesa portion includes a P-type DBR layer, the mesa portion is further provided with an oxidation limiting layer, the oxidation limiting layer is disposed between the active layer and the P-type DBR layer, a current limiting hole is disposed on the oxidation limiting layer, and the active layer outputs a light beam vertically to an upper surface direction of the mesa portion through the current limiting hole to form the light outlet.
4. The tunable laser chip of claim 3, wherein passivation layers are disposed on the upper surface of the base portion, the upper surface of the truncated cone portion, and outside the side wall of the truncated cone portion, the heating tuning structure is disposed outside the passivation layers, the passivation layers are provided with annular windows on the upper surface of the truncated cone portion, and the light outlet is disposed in the annular windows.
5. The tunable laser chip of claim 4, further comprising a P-side electrode and an N-side electrode, the P-side electrode being evaporated on the passivation layer and covering the annular window, the P-side electrode being in contact with the P-type DBR layer; the N-face electrode is evaporated below the substrate layer.
6. The tunable laser chip of claim 5, wherein the P-side electrode comprises an inner connection portion, an outer connection portion and a connection portion, the inner connection portion is evaporated on the annular window, the inner connection portion is provided with a through hole for facilitating the light beam output of the light outlet, and the outer connection portion is evaporated on the edge of the base portion and is used for electrically connecting with a peripheral structure; the two ends of the connecting part are respectively connected with the inner connecting part and the outer connecting part.
7. The tunable laser chip of claim 6, wherein the heating tuning structure comprises an annular heating electrode and a square heating electrode, the annular heating electrode is arranged around the periphery of the round table part, one end of the square heating electrode is connected with the annular heating electrode, and the other end of the square heating electrode is connected with a peripheral structure; the annular heating electrode is provided with a through groove which is used for avoiding interference with the P-face electrode, and the connecting part is evaporated on the passivation layer in the through groove.
8. A method of fabricating a tunable laser chip, comprising:
preparing a tunable laser chip body, wherein the tunable laser chip body comprises a base station part and a round platform part, and the tunable laser chip body is provided with a light outlet for outputting light beams to the upper surface of the round platform part;
the base station part is vapor-deposited with a heating tuning structure, and the heating tuning structure is enclosed on the outer wall of the round station part and is used for adjusting the wavelength tuning range of the light beam output by the light outlet by changing the temperature.
9. The method of manufacturing a tunable laser chip of claim 8, wherein the manufacturing a tunable laser chip body comprises:
cleaning the epitaxial wafer to ensure that the surface of the epitaxial wafer is free from stains and chemical residues;
etching the epitaxial wafer by using a dry etching process to form a round platform part and a base platform part on the epitaxial wafer; the base platform part comprises a substrate layer, an N-type DBR layer and an active layer from bottom to top;
performing side oxidation on the oxide layer by adopting a wet selective oxidation technology to form an elliptical current limiting hole, wherein the active layer vertically outputs a light beam to the upper surface direction of the round table part through the current limiting hole so as to form the light outlet;
and depositing transparent insulating substances on the surfaces of the round table part and the base part to serve as passivation layers, and etching annular windows on the surfaces of the passivation layers through etching technology, wherein the annular windows are arranged outside the light outlet in a surrounding mode.
10. The method of manufacturing a tunable laser chip of claim 9, further comprising, after the manufacturing of the tunable laser chip body:
evaporating metal on the periphery of the passivation layer, which is positioned at the light outlet, to form a P-surface electrode, wherein the P-surface electrode fills and covers the annular window so as to be connected with a P-type DBR layer;
and evaporating metal on the substrate layer to form an N-face electrode.
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