CN220382488U - High-speed vertical cavity surface emitting laser and photoelectric equipment with same - Google Patents
High-speed vertical cavity surface emitting laser and photoelectric equipment with same Download PDFInfo
- Publication number
- CN220382488U CN220382488U CN202321584140.9U CN202321584140U CN220382488U CN 220382488 U CN220382488 U CN 220382488U CN 202321584140 U CN202321584140 U CN 202321584140U CN 220382488 U CN220382488 U CN 220382488U
- Authority
- CN
- China
- Prior art keywords
- layer
- oxidation
- surface emitting
- reflector
- emitting laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 42
- 230000003647 oxidation Effects 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000005693 optoelectronics Effects 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 8
- 238000004891 communication Methods 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 238000001228 spectrum Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The disclosure provides a high-speed vertical cavity surface emitting laser and photoelectric equipment with the same, and relates to the technical field of photoelectric devices. The high-speed vertical cavity surface emitting laser comprises a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxidation limiting layer, a second reflector layer and a second electrode layer, wherein the oxidation aperture shape of the oxidation limiting layer is in a water drop shape. By adopting the high-speed vertical cavity surface emitting laser, the generation of a plurality of degeneracy modes on the same frequency point can be reduced, so that the relative intensity noise of the laser can be reduced, the consistency of the relative intensity noise and the root mean square spectrum width is improved, and the communication quality is greatly improved.
Description
Technical Field
The present disclosure relates generally to the field of optoelectronic devices, and in particular, to a high-speed vertical cavity surface emitting laser and an optoelectronic device having the same.
Background
The vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL) has the advantages of small volume, low power consumption, two-dimensional array integration, high modulation rate, circular beam output and the like, and can be widely applied to the fields of optical communication, 3D sensing, laser radar and the like. The oxidized aperture shape in the oxidation-limited layer of the VCSEL affects the mode of the laser and further affects important characteristics such as relative intensity noise (Relative Intensity Noise, RIN) and Root Mean Square (RMS).
Currently, the oxidized aperture shape of the VCSEL in the related art is usually circular, and has extremely high rotational symmetry, so that two or even more degenerate modes are easy to appear on the same frequency point, and a mode competition phenomenon exists between the degenerate modes, so that mode allocation noise (Mode Partition Noise, MPN) is increased, further an RIN is increased, and meanwhile, the RIN and RMS consistency is deteriorated, so that a Bit Error Ratio (BER) of a communication system is improved, and the communication quality is seriously affected.
Disclosure of Invention
In view of the above-mentioned drawbacks or shortcomings in the related art, it is desirable to provide a high-speed vertical cavity surface emitting laser and an optoelectronic device having the same, which can reduce the relative intensity noise of the laser, and improve the consistency of the relative intensity noise and the root mean square spectrum width, so as to solve the problem of increasing the bit error rate due to the excessive relative intensity noise and dispersion, and improve the communication quality.
In a first aspect, the present disclosure provides a high-speed vertical cavity surface emitting laser comprising a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxidation-limiting layer, a second reflector layer, and a second electrode layer, wherein an oxidation aperture shape of the oxidation-limiting layer is a drop shape.
Optionally, in some embodiments of the present disclosure, the first electrode layer, the first reflector layer, the active layer, the oxidation-limiting layer, the second reflector layer, and the second electrode layer are stacked in order above the substrate layer;
alternatively, the first electrode layer is located below the substrate layer, and the first reflector layer, the active layer, the oxidation limiting layer, the second reflector layer, and the second electrode layer are stacked in order above the substrate layer.
Optionally, in some embodiments of the present disclosure, the first reflector layer and the second reflector layer comprise at least one of a bragg reflector layer and a high contrast grating layer.
Optionally, in some embodiments of the disclosure, the active layer includes any one of a single quantum well layer and a multiple quantum well layer.
Optionally, in some embodiments of the disclosure, the oxidation aperture is disposed at a location intermediate the oxidation limiting layer.
Optionally, in some embodiments of the disclosure, the high-speed vertical cavity surface emitting laser further includes a passivation layer located on the second reflector layer in a region where the second electrode layer is not disposed.
In a second aspect, the present disclosure provides an optoelectronic device comprising a high speed vertical cavity surface emitting laser according to any one of the first aspects.
From the above technical solutions, the embodiments of the present disclosure have the following advantages:
the embodiment of the disclosure provides a high-speed vertical cavity surface emitting laser and photoelectric equipment with the same, by setting the oxidation aperture shape in the oxidation limiting layer of the high-speed vertical cavity surface emitting laser into a drop shape, the rotational symmetry of the distribution of circular oxidation aperture modes is broken, the generation of multiple degeneracy modes on the same frequency point can be reduced, the relative intensity noise of the laser can be reduced, the consistency of the relative intensity noise and the root mean square spectrum width is improved, and the communication quality is greatly improved.
Drawings
Other features, objects and advantages of the present disclosure will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the following drawings:
fig. 1 is a schematic cross-sectional view of a high-speed vcsels according to an embodiment of the present disclosure;
FIG. 2 is a top view of a water droplet-shaped oxidation aperture provided in an embodiment of the present disclosure;
fig. 3 is an oxidation simulation schematic diagram corresponding to a droplet-shaped oxidation aperture, a microscope schematic diagram corresponding to an actual chip, and a near-field flare schematic diagram according to an embodiment of the disclosure;
FIG. 4 is a schematic cross-sectional view of another embodiment of the present disclosure;
fig. 5 is a block diagram of an optoelectronic device according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of a basic flow of a method for manufacturing a high-speed VCSEL according to an embodiment of the present disclosure;
fig. 7 is a schematic diagram of a droplet-shaped design with different aspect ratios according to an embodiment of the present disclosure.
Reference numerals:
100-high speed vertical cavity surface emitting laser, 101-substrate layer, 102-first electrode layer, 103-first reflector layer, 104-active layer, 105-oxidation-limiting layer, 1051-oxidation aperture, 106-second reflector layer, 107-second electrode layer, 108-passivation layer, 200-optoelectronic device.
Detailed Description
In order that those skilled in the art will better understand the present disclosure, a technical solution in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person of ordinary skill in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.
The terms "first," "second," "third," "fourth" and the like in the description and in the claims and in the above-described figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the described embodiments of the disclosure may be capable of operation in sequences other than those illustrated or described herein.
Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or modules is not necessarily limited to those steps or modules that are expressly listed or inherent to such process, method, article, or apparatus.
For ease of understanding and explanation, the high-speed vertical cavity surface emitting laser, the optoelectronic device having the same, and the method of manufacturing the same provided by the embodiments of the present disclosure are described in detail below with reference to fig. 1 to 7.
Fig. 1 is a schematic cross-sectional view of a high-speed vcsels according to an embodiment of the disclosure. The high-speed vertical cavity surface emitting laser 100 includes a substrate layer 101, a first electrode layer 102, a first reflector layer 103, an active layer 104, an oxidation limiting layer 105, a second reflector layer 106, and a second electrode layer 107.
It should be noted that, in the embodiment of the disclosure, the first electrode layer 102 may be an N-type metal electrode layer, and the second electrode layer 107 may be a P-type metal electrode layer. And the oxidation aperture shape of the oxidation limiting layer 105 may be a drop shape, such as shown in fig. 2. Further, as shown in fig. 3, an oxidation simulation diagram corresponding to a droplet-shaped oxidation aperture, a microscope diagram corresponding to an actual chip, and a Near Field (NF) flare diagram provided in the embodiment of the present disclosure are sequentially shown. The embodiment of the present disclosure can break the rotational symmetry of the circular oxidized aperture mode distribution by setting the oxidized aperture shape in the oxidized confinement layer 105 to a water drop shape, thereby reducing the generation of multiple degenerate modes on the same frequency point. In addition, the drop-shaped unthreaded hole can also reduce the adverse effect of process errors on the high-speed performance of the chip, which is beneficial to the improvement of the product yield. In the production process, the actual oxidation shape will have a slight difference from the design shape, but the tolerance of the drop-shaped photo hole to this difference is high compared to the photo holes of other shapes. Therefore, the water drop-shaped chips on the whole wafer are more consistent in performance, the outliers are greatly reduced, and the yield of the light-passing chip array is improved.
Alternatively, as shown in fig. 1, a first electrode layer 102, a first reflector layer 103, an active layer 104, an oxidation limiting layer 105, a second reflector layer 106, and a second electrode layer 107 are stacked in this order over a substrate layer 101 in the embodiment of the present disclosure. Alternatively, as shown in fig. 4, in some embodiments of the present disclosure, the first electrode layer 102 is located below the substrate layer 101, and the first reflector layer 103, the active layer 104, the oxidation limiting layer 105, the second reflector layer 106, and the second electrode layer 107 are sequentially stacked above the substrate layer 101.
Alternatively, the first reflector layer 103 and the second reflector layer 106 in the embodiments of the present disclosure may include any one of an N-type reflector layer and a P-type reflector layer. Further, the first reflector layer 103 and the second reflector layer 106 may include at least one of a bragg reflector (Distributed Bragg Reflector, DBR) layer and a high contrast grating (High Contrast Grating, HCG) layer. That is, the first reflector layer 103 and the second reflector layer 106 are both bragg reflectors, or the first reflector layer 103 and the second reflector layer 106 are both high contrast gratings, or one of the first reflector layer 103 and the second reflector layer 106 is a bragg reflector and the other is a high contrast grating.
Alternatively, the oxidation aperture 1051 is disposed at an intermediate position of the oxidation limiting layer 105 in the embodiment of the present disclosure, and the active layer 104 may include any one of a single quantum well layer and a multiple quantum well (Multiple Quantum Well, MQW) layer for emitting light upon energization.
Alternatively, taking the example shown in fig. 4, the high-speed vcsels 100 according to the embodiments of the present disclosure further include a passivation layer 108, where the passivation layer 108 may be located on the second reflector layer 106 in a region where the second electrode layer 107 is not located. Wherein the passivation layer 108 is used for passivation of an insulating protection layer or an exit window protection layer, etc., the material of the passivation layer 108 may include, but is not limited to, silicon nitride (Si 3 N 4 ) And silicon dioxide (SiO) 2 ) Any one of the following.
On the other hand, please refer to fig. 5, which is a block diagram of an optoelectronic device according to an embodiment of the present disclosure. The optoelectronic device 200 includes the high-speed vertical cavity surface emitting laser 100 according to the corresponding embodiment of fig. 1 to 4. For example, the optoelectronic device 200 may include, but is not limited to, an optical module, an integrated optoelectronic chip, and the like.
As yet another aspect, please refer to fig. 6, which is a schematic diagram illustrating a basic flow chart of a method for manufacturing a high-speed vcsels according to an embodiment of the disclosure. The method can be applied to the high-speed vertical cavity surface emitting laser 100 in the corresponding embodiment of fig. 1 to 4, and specifically comprises the following steps:
s101, providing a substrate layer, and forming a first reflector layer, an active layer, an oxidation limiting layer, and a second reflector layer over the substrate layer in order.
Illustratively, taking the structure shown in FIG. 1 as an example, the first reflector layer 103, the active layer 104, and Al are formed on the substrate layer 101 by periodic alternating growth using metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) or molecular beam epitaxy (Molecular Beam Epitaxy, MBE) techniques 0.98 Ga 0.02 The oxidation limiting layer 105 of As high aluminum composition and the periodic alternating growth form a second reflector layer 106.
S102, setting three Trench arranged in a preset mode, and exposing the oxidation limiting layer through etching to partially oxidize the oxidation limiting layer to obtain the water drop-shaped oxidation aperture.
Illustratively, the embodiments of the present disclosure may provide three equally spaced or non-equally spaced Trench, i.e., the distances between the Trench are equal or unequal. After photolithography, a Trench pattern is obtained and etched by inductively coupled plasma (Inductively Coupled Plasma, ICP) to render Al 0.98 Ga 0.02 The oxidation limiting layer 105 of As high aluminum component is exposed, and then the water drop-shaped oxidation pore diameter 1051 is obtained by wet oxidation, wherein the oxidation pore diameter 1051 is arranged on Al 0.98 Ga 0.02 Intermediate the oxidation limiting layer 105 of As high aluminum composition.
In addition, it should be noted that, in the embodiment of the disclosure, the size of the Trench may be adjusted according to specific process limitations and chip performance indexes, for example, the width of the Trench may be 3 μm to 6 μm, the small spacing between the Trench may be 2 μm to 7 μm, and the large spacing may be 15 μm to 25 μm. According to the embodiment of the disclosure, the aspect ratio of the actual oxidation aperture 1051, for example, the water drop design with different aspect ratios shown in fig. 7, can be changed by adjusting the size and the position of the Trench, so that the distance between the unthreaded hole and the metal can be controlled, the inflow mode of current relative to the unthreaded hole is changed, the carrier concentration distribution is changed, and the effect of controlling the mode distribution of multiple transverse modes is achieved. And, compare in circular unthreaded hole, the Trench of this disclosed embodiment can promote the radiating effect, increases chip reliability, through adopting the Trench of great size simultaneously, can also guarantee the uniformity of oxidation, promotes the product yield.
And S103, performing metal filling on the etched Trench, and forming a first electrode layer and a second electrode layer, wherein the first electrode layer is connected with the first reflector layer, and the second electrode layer is connected with the second reflector layer.
Illustratively, in the embodiment of the present disclosure, metal filling may be performed on the Trench by using a magnetron sputtering method, an N-type metal electrode layer corresponding to the first electrode layer 102 is obtained by using an electrode evaporation process, and a P-type metal electrode layer corresponding to the second electrode layer 107 is obtained by using a magnetron sputtering method and a stripping process, and then the laser with the electrode plated is put into a rapid annealing furnace to perform annealing so as to achieve the purpose of alloy, so that good ohmic contact between the electrode and the semiconductor material can be formed, and the electrical characteristics of the device are improved. Wherein the first electrode layer 102 may be connected to the first reflector layer 103 and the second electrode layer 107 may be connected to the second reflector layer 106. The metal filling the Trench may be connected to the first electrode layer 102, or the metal filling the Trench may be connected to the second electrode layer 107, or the metal filling the Trench may exist separately from the two electrode layers.
It should be noted that, in this embodiment, the descriptions of the same steps and the same content as those in other embodiments may refer to the descriptions in other embodiments, and are not repeated here.
According to the high-speed vertical cavity surface emitting laser, the photoelectric device with the same and the manufacturing method, the oxidation aperture shape in the oxidation limiting layer of the high-speed vertical cavity surface emitting laser is set to be a drop shape, so that the rotational symmetry of distribution of circular oxidation aperture modes is broken, generation of multiple degeneracy modes on the same frequency point can be reduced, further, relative intensity noise of the laser can be reduced, meanwhile, consistency of the relative intensity noise and root mean square spectrum width is improved, and communication quality is greatly improved.
The above embodiments are merely for illustrating the technical solution of the present disclosure, and are not limiting thereof; although the present disclosure has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present disclosure.
Claims (7)
1. A high-speed vertical cavity surface emitting laser, comprising a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxidation limiting layer, a second reflector layer, and a second electrode layer, wherein the oxidation aperture shape of the oxidation limiting layer is a drop shape.
2. The high-speed vertical cavity surface emitting laser according to claim 1, wherein said first electrode layer, said first reflector layer, said active layer, said oxidation-limiting layer, said second reflector layer, and said second electrode layer are stacked in order above said substrate layer;
alternatively, the first electrode layer is located below the substrate layer, and the first reflector layer, the active layer, the oxidation limiting layer, the second reflector layer, and the second electrode layer are stacked in order above the substrate layer.
3. The high speed vcl-surface emitting laser of claim 1, wherein the first and second reflector layers include at least one of a bragg reflector layer and a high contrast grating layer.
4. The high-speed vertical cavity surface emitting laser according to claim 1, wherein the active layer comprises any one of a single quantum well layer and a multiple quantum well layer.
5. The high-speed vcl as claimed in any one of claims 1 to 4, wherein the oxidized aperture is provided at an intermediate position of the oxidation-limiting layer.
6. The high-speed vcl as recited in claim 5, further comprising a passivation layer on the second reflector layer in a region where the second electrode layer is not disposed.
7. An optoelectronic device comprising the high-speed vertical cavity surface emitting laser of any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321584140.9U CN220382488U (en) | 2023-06-20 | 2023-06-20 | High-speed vertical cavity surface emitting laser and photoelectric equipment with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321584140.9U CN220382488U (en) | 2023-06-20 | 2023-06-20 | High-speed vertical cavity surface emitting laser and photoelectric equipment with same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220382488U true CN220382488U (en) | 2024-01-23 |
Family
ID=89570445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321584140.9U Active CN220382488U (en) | 2023-06-20 | 2023-06-20 | High-speed vertical cavity surface emitting laser and photoelectric equipment with same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220382488U (en) |
-
2023
- 2023-06-20 CN CN202321584140.9U patent/CN220382488U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107078190B (en) | Method for GaN vertical microcavity surface emitting laser (VCSEL) | |
| US7012279B2 (en) | Photonic crystal light emitting device | |
| TWI714146B (en) | Led utilizing internal color conversion with light extraction enhancements | |
| US8995490B2 (en) | Edge-emitting semiconductor laser diode and method for producing the same | |
| US20220278165A1 (en) | Led arrays | |
| US10868213B2 (en) | LED utilizing internal color conversion with light extraction enhancements | |
| CN217239988U (en) | Vertical cavity surface emitting laser and electronic device having the same | |
| TWI845258B (en) | High-speed vertical cavity surface emitting laser, electronic device with the same and manufacturing method thereof | |
| US9419176B2 (en) | Three-dimensional light-emitting device and fabrication method thereof | |
| TW202312613A (en) | Vertical cavity surface emitting laser and manufacturing method thereof | |
| CN112838474A (en) | Epitaxial integrated dielectric film DBR external cavity surface emitting laser | |
| CN114583550A (en) | Vertical cavity surface emitting laser, electronic device having the same, and method of manufacturing the same | |
| WO2021213233A1 (en) | Vertical cavity surface emitting laser, manufacturing method thereof and camera module | |
| CN218161212U (en) | High-speed vertical cavity surface emitting laser and electronic device with same | |
| CN113708214A (en) | Dual-wavelength VCSEL structure based on selective area epitaxy technology and preparation method thereof | |
| CN220382488U (en) | High-speed vertical cavity surface emitting laser and photoelectric equipment with same | |
| CN116454730B (en) | High-speed vertical cavity surface emitting laser, photoelectric device with high-speed vertical cavity surface emitting laser and manufacturing method of high-speed vertical cavity surface emitting laser | |
| US7169629B2 (en) | VCSEL and the fabrication method of the same | |
| US20220311212A1 (en) | Vertical-cavity surface-emitting laser and method for forming the same | |
| CN111384666B (en) | Method for manufacturing vertical cavity surface emitting laser and vertical cavity surface emitting laser | |
| CN220382487U (en) | High-speed vertical cavity surface emitting laser and photoelectric equipment with same | |
| CN113410757B (en) | Vertical cavity surface emitting laser and preparation method thereof | |
| KR20200012613A (en) | A surface-emitting laser device and light emitting device including the same | |
| TWI773419B (en) | Backlit vertical resonant cavity surface emitting laser array and its manufacturing method | |
| CN116759888A (en) | High-speed vertical cavity surface emitting laser, photoelectric device with high-speed vertical cavity surface emitting laser and manufacturing method of high-speed vertical cavity surface emitting laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |