CN218161212U - High-speed vertical cavity surface emitting laser and electronic device with same - Google Patents
High-speed vertical cavity surface emitting laser and electronic device with same Download PDFInfo
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- CN218161212U CN218161212U CN202222356307.8U CN202222356307U CN218161212U CN 218161212 U CN218161212 U CN 218161212U CN 202222356307 U CN202222356307 U CN 202222356307U CN 218161212 U CN218161212 U CN 218161212U
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Abstract
The present disclosure provides a high-speed vertical cavity surface emitting laser and an electronic device having the same, the high-speed vertical cavity surface emitting laser includes a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxidation confinement layer, a second reflector layer, and a second electrode layer, wherein an oxidation aperture shape of the oxidation confinement layer is a polygon having a non-perfect symmetry. By adopting the high-speed vertical cavity surface emitting laser, the relative intensity noise of the laser can be reduced, meanwhile, the consistency of the relative intensity noise and the root mean square spectrum width is improved, and the communication quality is greatly improved.
Description
Technical Field
The present disclosure relates generally to the field of optoelectronic device technology, and more particularly, to a high-speed vertical cavity surface emitting laser and an electronic device having the same.
Background
A Vertical Cavity Surface Emitting Laser (VCSEL) has many advantages such as small size, low power consumption, easy integration, high modulation rate, and circular beam output, and can be widely applied to the fields of optical communication, 3D sensing, laser radar, and the like.
The shape of the oxide aperture in the oxide confinement layer of a VCSEL affects the mode of the laser and further affects important characteristics such as Relative Intensity Noise (RIN) and Root Mean Square (RMS) spectral width. At present, in the related art, the shape of an oxide aperture of a VCSEL is generally circular and has extremely high rotational symmetry, which causes two or even a plurality of degenerate modes to easily appear at the same frequency point, and a Mode competition phenomenon exists between the degenerate modes, which causes an increase in Mode allocation Noise (MPN), and further causes an increase in RIN, and simultaneously causes a deterioration in consistency between RIN and RMS, thereby causing an increase in Bit Error Rate (BER) of a communication system and seriously affecting communication quality.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned defects or shortcomings in the related art, it is desirable to provide a high-speed vertical cavity surface emitting laser and an electronic device having the same, which can reduce the relative intensity noise of the laser and simultaneously improve the consistency of the relative intensity noise and the root mean square spectrum width, thereby solving the problem of increased bit error rate due to excessive relative intensity noise and dispersion and improving the communication quality.
In a first aspect, the present disclosure provides a high speed vertical cavity surface emitting laser comprising a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxidation confinement layer, a second reflector layer, and a second electrode layer, wherein the oxidation aperture shape of the oxidation confinement layer is a polygon with non-perfect symmetry.
Optionally, in some embodiments of the present disclosure, the oxide aperture is disposed at an intermediate position of the oxide confinement layer.
Optionally, in some embodiments of the present disclosure, the first electrode layer is below the substrate layer, and the first reflector layer, the active layer, the oxidation limiting layer, the second reflector layer, and the second electrode layer are sequentially stacked above the substrate layer.
Optionally, in some embodiments of the present disclosure, the first reflector layer and the second reflector layer comprise at least one of a bragg reflector layer and a high contrast grating layer.
Optionally, in some embodiments of the present disclosure, the first electrode layer and the second electrode layer include any one of an N-type electrode layer and a P-type electrode layer.
Optionally, in some embodiments of the present disclosure, the active layer includes any one of a single quantum well layer and a multiple quantum well layer.
In a second aspect, the present disclosure provides an electronic device including the high-speed vertical cavity surface emitting laser according to any one of the first aspects.
According to the technical scheme, the embodiment of the disclosure has the following advantages:
the embodiment of the disclosure provides a high-speed vertical cavity surface emitting laser and an electronic device with the same, wherein the shape of an oxidation aperture in an oxidation limiting layer of the high-speed vertical cavity surface emitting laser is set to be a polygon with incomplete symmetry, the rotational symmetry of circular oxidation aperture mode distribution is broken, the generation of a plurality of degenerate modes on the same frequency point is reduced, the relative intensity noise of the laser can be reduced, the consistency of the relative intensity noise and the root-mean-square spectral width is improved, and the communication quality is greatly improved.
Drawings
Other features, objects and advantages of the disclosure will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic cross-sectional structure diagram of a high-speed vertical cavity surface emitting laser according to an embodiment of the present disclosure;
FIG. 2 is a top view of the oxide aperture region and the corresponding spectral pattern distribution of a related art circular oxide aperture high speed VCSEL;
FIG. 3 is a top view of the oxide aperture region and the corresponding spectral pattern distribution of a pentagonal oxide aperture high speed VCSEL with imperfect symmetry according to an embodiment of the present disclosure;
FIG. 4 is a comparative schematic of RIN box plots of a related art circular oxide aperture high speed VCSEL and a pentagonal oxide aperture high speed VCSEL with imperfect symmetry provided by embodiments of the present disclosure;
FIG. 5 is a comparative schematic RMS box plot of a related art circular oxide aperture high speed VCSEL and a pentagonal oxide aperture high speed VCSEL with imperfect symmetry provided by embodiments of the present disclosure;
fig. 6 is a block diagram of an electronic device according to an embodiment of the present disclosure;
FIG. 7 is a schematic diagram of a basic process flow of a method for fabricating a high-speed VCSEL according to an embodiment of the present disclosure;
fig. 8 is a top view of a high speed VCSEL partial oxidation aperture shape and a corresponding near field optical spot pattern provided by an embodiment of the present disclosure.
Reference numerals:
100-high speed vertical cavity surface emitting laser, 101-substrate layer, 102-first electrode layer, 103-first reflector layer, 104-active layer, 105-oxide confinement layer, 1051-oxide aperture, 106-second reflector layer, 107-second electrode layer, 200-electronic device.
Detailed Description
In order to make the technical solutions of the present disclosure better understood by those skilled in the art, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are only a part of the embodiments of the present disclosure, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present disclosure and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the disclosure described are capable of operation in sequences other than those illustrated or otherwise described herein.
Moreover, the terms "comprises," "comprising," and any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or modules is not necessarily limited to those steps or modules explicitly listed, but may include other steps or modules not expressly listed or inherent to such process, method, article, or apparatus.
For convenience of understanding and explanation, the high-speed vertical cavity surface emitting laser provided by the embodiment of the present disclosure, and the electronic device and the manufacturing method having the same are explained in detail below by fig. 1 to 8.
Please refer to fig. 1, which is a schematic cross-sectional structure diagram of a high-speed vcsel according to an embodiment of the present disclosure. The high-speed vertical cavity surface emitting laser 100 includes a substrate layer 101, a first electrode layer 102, a first reflector layer 103, an active layer 104, an oxidation confinement layer 105, a second reflector layer 106, and a second electrode layer 107.
The shape of the oxide aperture of the oxide limiting layer 105 is a polygon with non-complete symmetry, such as but not limited to a quadrangle, a pentagon, a hexagon, and the like. Optionally, the oxide aperture 1051 is disposed in the middle of the oxide confinement layer 105 in the embodiments of the present disclosure. Taking the polygon as an example, as shown in fig. 2, which is a top view of the oxide aperture region of a related art circular oxide aperture high speed VCSEL and a corresponding spectral pattern profile, and as shown in fig. 3, which is a top view of the oxide aperture region of a related art circular oxide aperture high speed VCSEL having a non-perfect symmetry and a corresponding spectral pattern profile provided by an embodiment of the present disclosure, wherein the abscissa of the spectral pattern profile represents the wavelength and the ordinate represents the luminous intensity. As can be seen from fig. 2 and fig. 3, the pentagonal oxidation pore size with imperfect symmetry breaks the rotational symmetry of the circular oxidation pore size mode distribution, so that the degenerate modes are separated, thereby avoiding the generation of multiple degenerate modes at the same frequency point.
Further, as shown in fig. 4, it is a comparison between RIN box diagrams of a related art circular oxide aperture high speed VCSEL and a pentagonal oxide aperture high speed VCSEL with non-complete symmetry provided by the embodiment of the present disclosure, and as shown in fig. 5, it is a comparison between RMS box diagrams of a related art circular oxide aperture high speed VCSEL and a pentagonal oxide aperture high speed VCSEL with non-complete symmetry provided by the embodiment of the present disclosure. As can be seen from fig. 4 and 5, the pentagonal oxidized aperture with non-complete symmetry can reduce MPN, so as to effectively reduce RIN of the VCSEL, improve consistency of RIN and RMS, and greatly improve communication quality.
Alternatively, the high speed VCSEL 100 of embodiments of the present disclosure includes, but is not limited to, a top emitting structure and a bottom emitting structure. Such as the top emission structure shown in fig. 1, in which the first electrode layer 102 is under the substrate layer 101, and the first reflector layer 103, the active layer 104, the oxide confinement layer 105, the second reflector layer 106, and the second electrode layer 107 are sequentially stacked over the substrate layer 101.
Alternatively, the first reflector layer 103 and the second reflector layer 106 in the embodiments of the present disclosure may include any one of an N-type reflector layer and a P-type reflector layer. Further, the first Reflector layer 103 and the second Reflector layer 106 may include at least one of a Distributed Bragg Reflector (DBR) layer and a High Contrast Grating (HCG) layer. That is, the first reflector layer 103 and the second reflector layer 106 are both bragg reflectors, or the first reflector layer 103 and the second reflector layer 106 are both high-contrast gratings, or one of the first reflector layer 103 and the second reflector layer 106 is a bragg reflector and the other is a high-contrast grating.
Alternatively, the first electrode layer 102 and the second electrode layer 107 in the embodiment of the present disclosure may include any one of an N-type electrode layer and a P-type electrode layer.
Alternatively, the active layer 104 in the embodiment of the present disclosure may include any one of a single Quantum Well (MQW) layer and a Multiple Quantum Well (MQW) layer for emitting light when energized.
The embodiment of the disclosure provides a high-speed vertical cavity surface emitting laser, which breaks the rotational symmetry of circular oxide aperture mode distribution by setting the shape of the oxide aperture in the oxide limiting layer of the high-speed vertical cavity surface emitting laser to be a polygon with incomplete symmetry, reduces the generation of a plurality of degenerate modes on the same frequency point, further reduces the relative intensity noise of the laser, improves the consistency of the relative intensity noise and the root-mean-square spectral width, and greatly improves the communication quality.
Based on the foregoing embodiments, please refer to fig. 6, which is a block diagram of an electronic device according to an embodiment of the disclosure. The electronic device 200 includes the high-speed VCSEL 100 of the embodiment corresponding to FIGS. 1 to 5. For example, the electronic device 200 may include, but is not limited to, an optical module, an integrated optoelectronic chip, and the like.
The embodiment of the disclosure provides an electronic device, and because the high-speed vertical cavity surface emitting laser of the electronic device sets the shape of the oxidation aperture in the oxidation limiting layer to be a polygon with incomplete symmetry, the rotational symmetry of circular oxidation aperture mode distribution is broken, the generation of a plurality of degenerate modes on the same frequency point is reduced, the relative intensity noise of the laser can be further reduced, meanwhile, the consistency of the relative intensity noise and the root-mean-square spectral width is improved, and the communication quality is greatly improved.
Based on the foregoing embodiments, please refer to fig. 7, which is a schematic diagram illustrating a basic flow of a method for manufacturing a high-speed vertical cavity surface emitting laser according to an embodiment of the present disclosure. The method can be applied to the high-speed vertical cavity surface emitting laser 100 of the embodiment corresponding to fig. 1 to 5, and specifically includes the following steps:
s101, providing a substrate layer, and sequentially forming a first reflector layer, an active layer, an oxidation limiting layer and a second reflector layer above the substrate layer.
Illustratively, taking the structure shown in fig. 1 as an example, the first reflector layer 103 and the active layer 103 are formed on the substrate layer 101 by periodic and alternate growth using Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) techniques104、Al 0.98 Ga 0.02 An oxidized confinement layer 105 of As high aluminum composition and periodically alternately grown forms a second reflector layer 106.
And S102, arranging a plurality of Trench, and exposing the oxidation limiting layer through etching to partially oxidize the oxidation limiting layer to obtain the polygonal oxidation aperture with incomplete symmetry.
For example, the embodiments of the present disclosure may provide five equally spaced or unequally spaced trenches, that is, the distances between the trenches are equal or unequal. Obtaining a Trench graph after photoetching, and etching by Inductively Coupled Plasma (ICP) to enable Al to be formed 0.98 Ga 0.02 The oxidation limiting layer 105 with As high aluminum component is exposed, and then the pentagonal oxidation aperture with non-complete symmetry is obtained through a wet oxidation mode, wherein the oxidation aperture 1051 is arranged on Al 0.98 Ga 0.02 An intermediate position of the As high alumina composition oxidation limiting layer 105. As shown in fig. 8, which is a top view of a partial oxidation aperture shape of a high-speed VCSEL and a corresponding Near Field (NF) spot diagram provided in the embodiment of the present disclosure, pentagonal oxidation apertures with different shapes can be obtained by differently setting the positions of the trenches, and meanwhile, stability and reliability of the high-speed vertical cavity surface emitting laser 100 can be improved by five Trench oxidation modes.
And S103, filling metal into the etched Trench, forming a first electrode layer below the substrate layer and forming a second electrode layer above the second reflector layer.
Exemplarily, in the embodiment of the present disclosure, the Trench is filled with metal by a magnetron sputtering method, an N-type metal electrode corresponding to the first electrode layer 102 is obtained by an electrode evaporation process, a P-type metal electrode corresponding to the second electrode layer 106 is obtained by a magnetron sputtering method and a lift-off process, and then the laser coated with the electrode is placed in a rapid annealing furnace for annealing to achieve the purpose of alloying, so that a good ohmic contact can be formed between the electrode and a semiconductor material, and the electrical characteristics of the device are improved, thereby obtaining the high-speed vertical cavity surface emitting laser 100 shown in fig. 1.
It should be noted that, for the descriptions of the same steps and the same contents in this embodiment as those in other embodiments, reference may be made to the descriptions in other embodiments, which are not described herein again.
The embodiment of the disclosure provides a method for manufacturing a vertical cavity surface emitting laser, which breaks the rotational symmetry of circular oxide aperture mode distribution by setting the shape of the oxide aperture in the oxide limiting layer of the high-speed vertical cavity surface emitting laser to be a polygon with incomplete symmetry, reduces the generation of a plurality of degenerate modes on the same frequency point, further reduces the relative intensity noise of the laser, improves the consistency of the relative intensity noise and the root-mean-square spectrum width, and greatly improves the communication quality.
The above examples are only intended to illustrate the technical solution of the present disclosure, not to limit it; although the present disclosure has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present disclosure.
Claims (7)
1. A high-speed vertical cavity surface emitting laser includes a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxidation confinement layer, a second reflector layer, and a second electrode layer, wherein the oxidation confinement layer has an oxide aperture shape of a polygon having a non-perfect symmetry.
2. A high speed vertical cavity surface emitting laser according to claim 1, wherein said oxide aperture is provided at an intermediate position of said oxide confinement layer.
3. A high speed vertical cavity surface emitting laser according to any one of claims 1 to 2, wherein said first electrode layer is below said substrate layer, and said first reflector layer, said active layer, said oxide confinement layer, said second reflector layer and said second electrode layer are stacked in this order above said substrate layer.
4. A high speed VCSEL according to claim 3, wherein the first reflector layer and the second reflector layer include at least one of a Bragg reflector layer and a high contrast grating layer.
5. A high speed vertical cavity surface emitting laser according to claim 4, wherein said first electrode layer and said second electrode layer comprise any one of an N-type electrode layer and a P-type electrode layer.
6. A high speed VCSEL according to claim 5, wherein the active layer includes any one of a single quantum well layer and a multiple quantum well layer.
7. An electronic device characterized in that it comprises a high-speed vertical cavity surface emitting laser according to any one of claims 1 to 6.
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| CN115377796A (en) * | 2022-09-05 | 2022-11-22 | 深圳博升光电科技有限公司 | High-speed vertical cavity surface emitting laser, electronic device with high-speed vertical cavity surface emitting laser and manufacturing method of high-speed vertical cavity surface emitting laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115377796A (en) * | 2022-09-05 | 2022-11-22 | 深圳博升光电科技有限公司 | High-speed vertical cavity surface emitting laser, electronic device with high-speed vertical cavity surface emitting laser and manufacturing method of high-speed vertical cavity surface emitting laser |
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