CN116937322B - Vertical cavity surface emitting laser - Google Patents
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- CN116937322B CN116937322B CN202310985182.1A CN202310985182A CN116937322B CN 116937322 B CN116937322 B CN 116937322B CN 202310985182 A CN202310985182 A CN 202310985182A CN 116937322 B CN116937322 B CN 116937322B
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- 238000000427 thin-film deposition Methods 0.000 claims description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Semiconductor Lasers (AREA)
Abstract
The invention discloses a vertical cavity surface emitting laser, which comprises a substrate, an AlN layer arranged on the substrate, an N-type ohmic contact layer arranged on the AlN layer and positioned in the middle of the AlN layer, a resonance unit arranged on the N-type ohmic contact layer, a P-type electrode and an N-type electrode; the resonance unit comprises a lower layer DBR, an active region, an oxidation limiting layer, an upper layer DBR and a P-type ohmic contact layer which are sequentially arranged on the N-type ohmic contact layer from bottom to top; and a heating wire is further arranged on the AlN layer and is positioned on the outer side of the N-type ohmic contact layer. According to the laser device, the AlN layer is added on the substrate, the heating wire is arranged on the AlN layer and serves as the temperature control structure of the laser device, so that the temperature control structure of the laser device is prepared with the laser device, the volume of a temperature control system of the laser device is effectively reduced, meanwhile, the heat transfer time is reduced, the temperature regulation of the laser device is enabled to be rapid, the lasing wavelength of the laser device is enabled to be stable, and the use effect is good.
Description
Technical Field
The present application relates to the field of optoelectronic technology, and in particular, to a vertical cavity surface emitting laser.
Background
Vertical-cavity surface-emitting lasers (VCSELs) are an important member of the semiconductor laser family, and VCSELs have the advantages of small size, good single-mode characteristics, low threshold current, circular light spot output and the like, and have been applied in the fields of communication, illumination, sensing and the like in a large scale.
In recent years, chip-scale atomic clocks (chip scale atomic clock, CSAC) based on VCSEL and micro-mechanical (micro-electromechanical system, MEMS) technologies become an important development direction of atomic frequency standard technologies, and VCSELs serve as core elements of the chip-scale atomic clocks, so that VCSE is ensured not to be influenced by environmental temperature factors, and stable output of light with specific wavelengths is a key technology in the development of the field.
However, due to the influence of the energy level characteristic of the quantum well in the vertical cavity surface emitting laser, when the working temperature of the quantum well changes, the forbidden bandwidth of the semiconductor material in the laser also changes, and further the lasing wavelength of the laser also changes, so that the lasing wavelength stability of the laser is poor and the use effect is poor.
Disclosure of Invention
Based on the above, the vertical cavity surface emitting laser is provided to solve the problems that the stability of the lasing wavelength of the laser is poor and the use effect is poor due to the fact that the forbidden bandwidth of semiconductor materials in the laser is changed along with the change of the working temperature of the quantum wells due to the influence of the energy level characteristics of the quantum wells in the vertical cavity surface emitting laser.
A vertical cavity surface emitting laser comprises a substrate, an AlN layer arranged on the substrate, an N-type ohmic contact layer arranged on the AlN layer and positioned in the middle of the AlN layer, a resonance unit arranged on the N-type ohmic contact layer, a P-type electrode and an N-type electrode;
the resonance unit comprises a lower layer DBR, an active region, an oxidation limiting layer, an upper layer DBR and a P-type ohmic contact layer which are sequentially arranged on the N-type ohmic contact layer from bottom to top;
and a heating wire is further arranged on the AlN layer, and the heating wire is positioned at the outer side of the N-type ohmic contact layer.
In the above scheme, optionally, the P-type electrode is disposed at a top of a left side of the P-type ohmic contact layer and a left side surface of the resonance unit.
In the above solution, further optionally, the P-type electrode is a semi-annular electrode, the radius of an outer ring of the P-type electrode is smaller than the radius of the resonance unit, and the radius of an inner ring of the P-type electrode is larger than the radius of the oxidation limiting hole on the oxidation limiting layer.
In the above aspect, further optionally, the oxidation limiting hole is formed on the oxidation limiting layer by wet oxidation.
In the above solution, further optionally, the N-type electrode is disposed on top of the right side of the N-type ohmic contact layer.
In the above solution, further optionally, the N-type electrode is a semi-ring electrode, and an inner ring radius of the N-type electrode is larger than a radius of the resonance unit.
In the above scheme, further optionally, an insulating layer is disposed on an outer side surface of the resonance unit, and the insulating layer is a silicon dioxide insulating layer.
In the above solution, further optionally, the N-type electrode is disposed on top of the right side of the N-type ohmic contact layer through a thin film deposition and metal lift-off process.
In the above solution, further optionally, the heating wire is disposed on the AlN layer by a thin film deposition and metal stripping process according to a preset layout manner.
In the above scheme, further optionally, the substrate is a gallium arsenide substrate, and the thickness of the substrate is 80-100 μm.
The invention has at least the following beneficial effects:
based on further analysis and research on the problems in the prior art, the invention realizes the problems that the stability of the lasing wavelength of the laser is poor and the use effect is poor because the forbidden bandwidth of semiconductor materials in the laser is changed along with the change of the working temperature of the quantum well due to the influence of the energy level characteristic of the quantum well in the vertical cavity surface emitting laser.
The vertical cavity surface emitting laser comprises a substrate, an AlN layer arranged on the substrate, an N-type ohmic contact layer arranged on the AlN layer and positioned in the middle of the AlN layer, a resonance unit arranged on the N-type ohmic contact layer, a P-type electrode and an N-type electrode; the resonance unit comprises a lower layer DBR, an active region, an oxidation limiting layer, an upper layer DBR and a P-type ohmic contact layer which are sequentially arranged on the N-type ohmic contact layer from bottom to top; and a heating wire is further arranged on the AlN layer and is positioned on the outer side of the N-type ohmic contact layer. According to the laser device, the AlN layer is added on the substrate, the heating wire is arranged on the AlN layer and serves as the temperature control structure of the laser device, the temperature control structure of the laser device is made to be together with the laser device, the volume of a temperature control system of the laser device is effectively reduced, meanwhile, the heat transfer time is shortened, the temperature regulation of the laser device is enabled to be rapid, and then the laser wave of the laser device is enabled to be more stable, and the using effect is good.
Drawings
Fig. 1 is a schematic diagram of the overall cross-sectional structure of a temperature-adjustable vertical cavity surface emitting laser according to the present invention.
FIG. 2 is a schematic plan view of a temperature-tunable-based VCSEL of the present invention;
the gallium arsenide semiconductor comprises a 1-gallium arsenide substrate, a 2-AlN layer, a 3-N type ohmic contact layer, a 4-N type electrode, a 5-N type DBR, a 6-active region, a 7-oxidation limiting layer, an 8-silicon dioxide insulating layer, a 9-P type DBR, a 10-P type ohmic contact layer, an 11-P type electrode and a 12-heating wire.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
The vertical cavity surface emitting laser provided by the application, as shown in fig. 1, is characterized by comprising a substrate 1, an AlN layer 2 arranged on the substrate 1, an N-type ohmic contact layer 3 arranged on the AlN layer 2 and positioned in the middle of the AlN layer 2, a resonance unit arranged on the N-type ohmic contact layer 3, a P-type electrode 11 and an N-type electrode 4;
the resonance unit comprises a lower layer DBR5, an active region 6, an oxidation limiting layer 7, an upper layer DBR9 and a P-type ohmic contact layer 10 which are sequentially arranged on the N-type ohmic contact layer 3 from bottom to top;
and a heating wire 12 is further arranged on the AlN layer 2, and the heating wire 12 is positioned outside the N-type ohmic contact layer 3.
In one embodiment, the P-type electrode 11 is disposed on the top of the left side of the P-type ohmic contact layer 10 and the left side of the resonance unit.
In one embodiment, the P-type electrode 11 is a semi-annular electrode, the radius of the outer ring of the P-type electrode 11 is smaller than the radius of the resonance unit, and the radius of the inner ring of the P-type electrode 11 is larger than the radius of the oxidation limiting hole on the oxidation limiting layer 7.
In one embodiment, the oxidation limiting layer 7 is provided with the oxidation limiting hole by wet oxidation.
In one embodiment, the N-type electrode 4 is disposed on top of the right side of the N-type ohmic contact layer 3.
In one embodiment, the N-type electrode 4 is a semi-annular electrode, and the radius of the inner ring of the N-type electrode 4 is larger than the radius of the resonance unit.
In one embodiment, an insulating layer 8 is disposed on an outer side surface of the resonance unit, and the insulating layer 8 is a silicon dioxide insulating layer.
In one embodiment, the N-type electrode 4 is disposed on top of the right side of the N-type ohmic contact layer 3 through a thin film deposition and metal lift-off process.
In one embodiment, the heating wires 12 are disposed on the AlN layer 2 through a thin film deposition and metal lift-off process according to a preset layout manner.
In one embodiment, the substrate 1 is a gallium arsenide substrate, and the thickness of the substrate 1 is 80-100 μm.
The vertical cavity surface emitting laser of the embodiment comprises a substrate, an AlN layer arranged on the substrate, an N-type ohmic contact layer arranged on the AlN layer and positioned in the middle of the AlN layer, a resonance unit arranged on the N-type ohmic contact layer, a P-type electrode and an N-type electrode; the resonance unit comprises a lower layer DBR, an active region, an oxidation limiting layer, an upper layer DBR and a P-type ohmic contact layer which are sequentially arranged on the N-type ohmic contact layer from bottom to top; and a heating wire is further arranged on the AlN layer and is positioned on the outer side of the N-type ohmic contact layer. According to the laser device, the AlN layer is added on the substrate, the heating wire is arranged on the AlN layer and serves as the temperature control structure of the laser device, the temperature control structure of the laser device is made to be together with the laser device, the volume of a temperature control system of the laser device is effectively reduced, meanwhile, the heat transfer time is shortened, the temperature regulation of the laser device is enabled to be rapid, and then the laser wave of the laser device is enabled to be more stable, and the using effect is good.
In one embodiment, the lasing wavelength of a VCSEL currently used in chip scale atomic clocks can be tuned by an external heating system. For the optimal working temperature point of the alkali metal gas chamber in the chip-level atomic clock at about 70 ℃, the working temperature of the laser can be consistent with the working temperature point of the alkali metal of the chip clock through structural design when the vertical cavity surface emitting laser is designed. The temperature of the alkali metal gas chamber and the laser are controlled in the physical light path of the chip atomic clock. The temperature of the alkali metal gas chamber is controlled to improve the activity of metal atoms in the alkali metal gas chamber; the temperature of the laser is controlled to create stable external temperature so that the laser irradiates normal wavelength and works stably at the working temperature point. In order to maintain stable temperature of the light path environment in the chip-level atomic clock, the temperature is usually controlled by an external circuit, but the external circuit has larger volume, and the distance between the external circuit and the laser needs time for heat transfer, so that the temperature regulation of the laser has time delay, the lasing wavelength of the laser is unstable, and the locking of the atomic clock is affected. The AlN material has good heat conductivity coefficient, and can be prepared on a gallium arsenide substrate by means of ion beam deposition, magnetron sputtering, reactive magnetron sputtering and the like. The AlN layer structure is added at the bottom of the laser, the metal heating wire with a specific structure is prepared on the AlN layer, the temperature control structure of the laser and the laser are prepared together, on one hand, the volume of a temperature control system is reduced, on the other hand, the heat transfer time is shortened, the temperature is correspondingly quicker through regulating and controlling the temperature of the laser, and the lasing wavelength of the laser is more stable.
Based on the principle, and in order to achieve the purposes, the invention adopts the following specific technical scheme:
the temperature-controllable vertical cavity surface emitting laser comprises a GaAs base substrate 1, an AlN layer 2, an N-type metal ohmic contact layer 3, a lower layer DBR5, an active region 6, an oxidation limiting layer 7, an upper layer DBR9 and a P-type metal ohmic contact layer 10 from bottom to top.
The lower layer DBR5, the active region 6, the oxidation limiting layer 7, the upper layer DBR9, and the P-type metal ohmic contact layer 10 form a cylindrical cavity resonator of the vertical cavity surface emitting laser, a P-type electrode 11 is plated on the left side of the top of the vertical cavity surface emitting laser, and an N-type electrode 4 is plated on the right side of the cavity resonator of the vertical cavity surface emitting laser and the N-type ohmic contact layer 3. The resonant cavity of the vertical cavity surface emitting laser is coated by a silicon dioxide layer 8, and an electrode window is prepared by wet etching.
The bottom of the vertical cavity surface emitting laser is provided with an N-type electrode 4 on the N-type metal ohmic contact layer 3 through a thin film deposition and metal stripping process. And etching the N-type ohmic contact layer 3 in a specific area around the vertical cavity surface emitting laser to expose the AlN layer 2, and preparing a heating wire 12 with a specific pattern on the AlN layer 2 through a thin film deposition and metal stripping process. The vertical cavity surface emitting laser P metal electrode is prepared by using magnetron sputtering equipment through thin film deposition and metal stripping processes.
Further, the P-type metal electrode 11 is located at the left side of the top of the resonator of the vertical cavity surface emitting laser, the radius of the outer ring of the P-type annular electrode is slightly smaller than that of the resonator, the radius of the inner ring is larger than the oxidation limiting aperture, and the annular width of the metal electrode is 7 microns.
Further, the resonant cavity of the vertical cavity surface emitting laser is prepared by adopting a dry etching process: the cleaned laser epitaxial wafer is firstly dried, photoresist is coated, a photoetching machine is used for preparing patterns, and then ICP dry etching is used for transferring mask patterns to the epitaxial wafer.
Further, the silicon dioxide coating layer 8 is used as an insulating medium to be deposited on the surface of the chip, silicon dioxide on the table surface of the resonant cavity is removed through photoetching and wet etching, and the P-type metal electrode and the light emitting hole are exposed, so that the Pad electrode is deposited in a later period.
Furthermore, the oxidation limiting layer 7 needs to be oxidized by a wet method to form an oxidation limiting hole so as to limit light and electricity, and an oxidation aperture with a proper size is prepared by optimizing parameters such as temperature, humidity and time of oxidation so as to realize single-mode output of the laser.
Further, the N-type metal electrode 4 is disposed on the right side of the resonant cavity of the vertical cavity surface emitting laser and is deposited on the N-type ohmic contact layer 3, and the N-type metal electrode is in a ring shape, and the size of the inner ring is larger than that of the resonant cavity.
Furthermore, the metal heating wires 12 on the AlN layer 2 are in a reciprocating trend, so that magnetic fields generated when the heating wires are electrified can be mutually offset, and the influence of the magnetic fields generated when the heating wires are electrified on the laser is eliminated.
Furthermore, good ohmic contact is realized by optimizing electrode sputtering conditions, alloy components and rapid thermal annealing conditions, so that contact resistance is reduced, and the performance of the laser is optimized.
Further, the temperature control effect of the laser is optimized by optimizing parameters such as the thickness of the AlN layer, the pattern size and the thickness of the metal heating wire.
Further, the gallium arsenide substrate of the vertical cavity surface emitting laser is relatively thick, which is unfavorable for device cleavage, and can be solved by thinning and polishing, and the gallium arsenide substrate is usually thinned to 80-100 microns.
Compared with the prior art, the embodiment utilizes good thermal conductivity of AlN material, prepares a heating wire with a specific pattern on the material, and generates heat by energizing the heating wire, and transmits the heat to a laser through an AlN film. Compared with the prior chip-level atomic clock in which a temperature control heating system is additionally arranged outside the laser, the AlN film and the metal heating wire are combined to have more dominant heat conduction by utilizing air or silicon and glass materials for heat conduction, the temperature control effect is more obvious, and the volume of the chip-level atomic clock and the circuit power consumption are greatly reduced by adopting the mode. The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (7)
1. The vertical cavity surface emitting laser is characterized by comprising a substrate (1), a P-type electrode (11), an N-type electrode (4), an AlN layer (2) arranged on the substrate (1), an N-type ohmic contact layer (3) arranged on the AlN layer (2) and positioned in the middle of the AlN layer (2), and a resonance unit arranged on the N-type ohmic contact layer (3);
the resonance unit comprises a lower layer DBR (5), an active region (6), an oxidation limiting layer (7), an upper layer DBR (9) and a P-type ohmic contact layer (10) which are sequentially arranged on the N-type ohmic contact layer (3) from bottom to top;
a heating wire (12) is further arranged on the AlN layer (2), and the heating wire (12) is positioned at the outer side of the N-type ohmic contact layer (3);
the P-type electrode (11) is arranged at the left top of the P-type ohmic contact layer (10) and the left side surface of the resonance unit;
an insulating layer (8) is arranged on the outer side surface of the resonance unit, and the insulating layer (8) is a silicon dioxide insulating layer;
the N-type electrode (4) is arranged at the top of the right side of the N-type ohmic contact layer (3).
2. A vertical cavity surface emitting laser according to claim 1, wherein said P-type electrode (11) is a semi-annular electrode, the outer annular radius of said P-type electrode (11) is smaller than the radius of said resonator element, and the inner annular radius of said P-type electrode (11) is larger than the radius of the oxidation limiting hole in said oxidation limiting layer (7).
3. A vertical cavity surface emitting laser according to claim 2, characterized in that said oxidation limiting hole is formed on said oxidation limiting layer (7) by wet oxidation.
4. A vertical cavity surface emitting laser according to claim 1, characterized in that said N-type electrode (4) is a semi-annular electrode, the inner annular radius of said N-type electrode (4) being larger than the radius of said resonating unit.
5. A vertical cavity surface emitting laser according to claim 1, characterized in that the N-type electrode (4) is arranged on top of the right side of the N-type ohmic contact layer (3) by means of thin film deposition and metal lift-off processes.
6. A vertical cavity surface emitting laser according to claim 1, wherein the heating wire (12) is arranged on the AlN layer (2) by thin film deposition and metal lift-off process according to a predetermined arrangement.
7. A vertical cavity surface emitting laser according to claim 1, characterized in that said substrate (1) is a gallium arsenide substrate, said substrate (1) having a thickness of 80-100 μm.
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| CN115051237A (en) * | 2022-04-25 | 2022-09-13 | 武汉云岭光电有限公司 | Semiconductor laser, method for manufacturing same, and method for raising temperature of semiconductor laser |
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| CN115051237A (en) * | 2022-04-25 | 2022-09-13 | 武汉云岭光电有限公司 | Semiconductor laser, method for manufacturing same, and method for raising temperature of semiconductor laser |
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