CN114256738B - Electric pump nitride suspended waveguide micro-laser and preparation method thereof - Google Patents
Electric pump nitride suspended waveguide micro-laser and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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Abstract
The invention discloses an electric pump nitride suspended waveguide micro-laser and a preparation method thereof. The invention prepares the nitride microcavity laser with the suspended waveguide structure on the silicon substrate nitride epitaxial wafer by utilizing photoetching, ICP nitride dry etching and silicon wet etching processes and an electron beam evaporation process; the microcavity is suspended, the optical loss in the vertical direction is greatly reduced, meanwhile, the electrode luminous area coincides with the microcavity area, and the lead wires are arranged on the posts at the two ends, so that the complex lead wire process is avoided.
Description
Technical Field
The invention relates to the technical field of laser, in particular to an electric pump nitride suspended waveguide micro-laser and a preparation method thereof.
Background
The laser technology is widely applied in national economy development, relates to a plurality of fields of industrial manufacture, communication, information processing, medical treatment and health, energy conservation and environmental protection, aerospace and the like, is a key support technology for developing high-end precision manufacture, and helps the national industrial transformation and upgrading. As one of the advanced technologies in the modern manufacturing industry, the method has the advantages of high precision, high efficiency, low energy consumption, low cost and the like which are not possessed by the traditional processing mode, has larger degree of freedom in the aspects of the material, shape, size, processing environment and the like of the processed material, and can better solve the technical problems of processing, forming, refining and the like of different materials. With the continuous development of laser technology and laser micromachining application technology, laser machining technology can replace traditional machining in more fields.
Lasers can be classified into the following categories according to the working medium: solid state lasers, liquid lasers, gas lasers, semiconductor lasers, free electron lasers. The semiconductor laser has the outstanding characteristics of high energy conversion efficiency, easiness in high-speed current modulation, microminiaturization, simple structure, long service life and the like, and becomes the most important and most practical laser.
So far, researchers have proposed different forms of lasers, mainly in the following directions: semiconductor laser, fiber laser, solid state laser. Both optical fibers and solid state depends on the development of a semiconductor laser, in the solid state laser, an LD is usually coupled and output by the optical fibers, single-tube energy is smaller, the light beam quality is poor, and the LD is generally coupled and output by the optical fibers in a shaping way, so that the light beam quality is improved; the fiber laser is also the same, LD is used as a pump source, and the improvement of power efficiency and the simplification of the system are also dependent on the development of LD chips; the greatest difference between optical and electrical pumping is that electrical pumping is more efficient, less bulky, and can reach wavelengths that some optical pumps cannot reach for the pump source.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the electric pump nitride suspended waveguide micro-laser with low optical loss in the vertical direction, high-density on-chip integration and extremely high efficiency, and simultaneously provides the preparation method of the electric pump nitride suspended waveguide micro-laser with simple process flow, small mode volume and low surface roughness.
According to one aspect of the description, an electric pump nitride suspended waveguide micro-laser is provided, wherein a silicon-based nitride epitaxial wafer is used as a carrier of the laser, and the laser comprises a silicon substrate layer, a u-type gallium nitride layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer, a p-type electrode arranged on the p-type gallium nitride layer and an n-type electrode arranged on the upper surface of the n-type gallium nitride layer, which are sequentially arranged from bottom to top; the laser is provided with a waveguide microcavity structure comprising an anode disc microcavity and a cathode disc microcavity, the anode disc microcavity and the cathode disc microcavity are connected through a waveguide, and the lower parts of the anode disc microcavity and the cathode disc microcavity are respectively supported by a silicon substrate layer.
The silicon substrate layer in the technical proposal is composed of HF and HNO 3 Due to isotropy, the disk microcavity structure which is only supported by the silicon columns on two sides of the waveguide is formed, so that the waveguide structure connecting the two disk microcavities is completely suspended, and the optical loss is greatly reduced in the vertical direction.
Further, the structure of the positive plate microcavity penetrates through the p-type gallium nitride layer 5 and the quantum well layer 4.
Further, the p-type electrode 6, the p-type gallium nitride layer 5 and the quantum well layer 4 are arranged in the anode disc microcavity; the n-type electrode 7 and the n-type gallium nitride layer 3 are arranged in the cathode disc microcavity.
Further, the anode disc microcavity and the cathode disc microcavity are in a step shape.
Further, the n-type electrode 7 is formed in the center of the negative disc microcavity; the p-type electrode 6 is formed in the center of the positive electrode disc microcavity.
According to an aspect of the present disclosure, there is provided a method for preparing the electric pump nitride suspended waveguide micro laser, including:
the first step: spin-coating photoresist on the upper surface of a p-type gallium nitride layer 5 of a silicon-based nitride epitaxial wafer, and defining a graph of a positive disc microcavity on the spin-coated photoresist layer by adopting a photoetching process;
and a second step of: evaporating metallic nickel on the graph of the positive plate micro-cavity by adopting an electron beam evaporation process, and removing residual photoresist;
and a third step of: etching the nitride layer downwards by adopting an ICP etching process until reaching the upper surface of the n-type gallium nitride layer 3, thereby transferring the pattern structure defined in the first step downwards into the p-type gallium nitride layer 5 and the quantum well layer 4 of the silicon-based nitride epitaxial wafer, and then removing metallic nickel by using dilute nitric acid;
fourth step: spin-coating photoresist on the upper surface of the silicon-based nitride epitaxial wafer, and defining a pattern of a negative disc microcavity on the spin-coated photoresist layer by adopting a photoetching process;
fifth step: evaporating metallic nickel on the surface of the pattern structure of the negative disc microcavity by adopting an electron beam evaporation process, and removing residual photoresist;
sixth step: etching the n-type gallium nitride layer 3 downwards along the defined complete negative disc microcavity structure by adopting an ICP etching process until reaching the upper surface of the silicon substrate layer 1, thereby transferring the pattern structure of the complete negative disc microcavity to the n-type gallium nitride layer 3 and the u-type gallium nitride layer 2 in sequence, and finally removing metallic nickel by using dilute nitric acid;
seventh step: spin-coating photoresist on the upper surface of the silicon-based nitride epitaxial wafer, and defining a p-type region electrode pattern and an n-type region electrode pattern on the spin-coated photoresist layer by adopting a photoetching process;
eighth step: evaporating a positive electrode on the upper surface of the electrode pattern of the p-type region by adopting an electron beam evaporation process, evaporating a negative electrode on the upper surface of the electrode pattern of the n-type region, respectively plating positive and negative electrodes on the p-type gallium nitride layer 5 and the n-type gallium nitride layer 3, finally removing residual photoresist, stripping Au/Ni on the photoresist, and obtaining a p-type electrode 6 and an n-type electrode 7;
ninth step: and etching the silicon substrate layer 1 by using an isotropic wet method to form silicon columns supporting discs on two sides of the waveguide in the silicon substrate layer 1, thereby obtaining the completely suspended waveguide microcavity.
According to the technical scheme, the electrically-driven gallium nitride suspended waveguide microcavity is designed and prepared by utilizing an advanced micro-nano processing technology, and as only the lower parts of the disc microcavities connected with the two ends of the suspended waveguide structure are supported by the silicon substrate layer, the waveguide microcavity structure connecting the two discs is completely suspended, the optical loss is greatly reduced in the vertical direction, and the system cost is further reduced under the condition that a complex lead process is avoided.
Further, the positive electrode and the negative electrode are both evaporated Au/Ni.
Compared with the prior art, the invention has the beneficial effects that:
(1) Compared with a solid laser taking crystals and glass as matrix materials and a gas laser taking gas as a working medium, the wavelength of the semiconductor laser can be expanded to the visible spectrum and the ultraviolet spectrum; in addition, gallium nitride is used as the representation of a III-nitride wide bandgap semiconductor, has remarkable performance advantages compared with the prior two-generation semiconductor, overcomes the problems of narrow bandgap of silicon materials, low electron mobility and more limitation in the high-frequency and high-power field, and has a low-dimensional quantum structure and excellent photoelectric physical properties; furthermore, since gallium nitride is a good photoelectric material, it can more intuitively respond to the change of the luminescence color in the microcavity.
(2) The invention prepares the nitride microcavity laser with the suspended waveguide structure on the silicon substrate nitride epitaxial wafer by utilizing photoetching, ICP nitride dry etching, silicon wet etching and electron beam evaporation process, the waveguide microcavity is suspended, the optical loss in the vertical direction is extremely small, meanwhile, the electrode light-emitting area is overlapped with the microcavity area, and the lead is arranged on the posts at the two ends, thereby avoiding complex lead process.
(3) The electric pump nitride suspended waveguide micro-laser provided by the invention has low optical loss in the vertical direction, is beneficial to high-density on-chip integration and has extremely high efficiency; the preparation method provided by the invention has simple process flow and can prepare the nitride suspended waveguide structure electric pump laser with small mode volume and low surface roughness.
Drawings
FIG. 1 is a side view of an electric pump nitride suspended waveguide micro-laser according to an embodiment of the present invention;
FIG. 2 is a top view of an electric pump nitride suspended waveguide micro-laser according to an embodiment of the present invention;
fig. 3 is a flow chart of a process for fabricating an electric pump nitride suspended waveguide micro-laser according to an embodiment of the present invention.
In the figure: 1. a silicon substrate layer; 2. a u-type gallium nitride layer; 3. an n-type gallium nitride layer; 4. a quantum well layer; 5. a p-type gallium nitride layer; 6. a p-type electrode; 7. an n-type electrode.
Detailed Description
The following description of the embodiments of the present invention will be made in detail and with reference to the accompanying drawings, wherein it is apparent that the embodiments described are only some, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
Example 1
As shown in fig. 1-2, the embodiment provides an electric pump nitride suspended waveguide micro-laser, which uses a silicon-based nitride epitaxial wafer as a carrier, and comprises a silicon substrate layer 1, a u-type gallium nitride layer 2, an n-type gallium nitride layer 3, a quantum well layer 4 arranged on one side of the n-type gallium nitride layer 3, and a p-type gallium nitride layer 5. The n-type gallium nitride platform and the p-type gallium nitride platform at the other side are in a ladder shape. An n-type electrode 7 with Au/Ni deposited metal material is evaporated at the center of the disk on the upper surface of the exposed n-type gallium nitride layer 3, and a p-type electrode 6 with Au/Ni deposited metal material is evaporated on the waveguide and disk pattern of the p-type gallium nitride platform. The silicon substrate layer 1 is composed of HF and HNO 3 Due to isotropy, a disk supported only by the silicon pillars is formed, so that the waveguide structure is completely suspended and the optical loss in the vertical direction is small.
The waveguide structure and the right disc structure penetrate through the p-type gallium nitride layer 5 and the quantum well layer 4.
The p-type electrode 6 is arranged along the upper surface of the p-type gallium nitride layer 5, and a disc structure with a waveguide and a right side connected is arranged below the p-type electrode; the n-type electrode 7 is arranged along the upper surface of the n-type gallium nitride layer 3, and a disc connected with the left side of the waveguide structure is arranged below the n-type electrode.
Example 2
As shown in fig. 3, this embodiment takes a disc+waveguide microcavity structure as an example, and an electric pump nitride suspended waveguide micro laser is prepared, where the radius of the disc is 75 microns, the length of the waveguide is 200 microns, and the width is 16 microns.
The first step: ultrasonic cleaning commercial silicon substrate nitride epitaxial wafer purchased through acetone, absolute ethyl alcohol and deionized water for one time, blow-drying by a nitrogen gun, spin-coating photoresist AZ5214 on the front surface of the wafer (the upper surface of the p-type gallium nitride layer 5) by using a spin coater at a rotating speed of 4000 revolutions per minute for 40 seconds (the thickness of the photoresist is 1.5 microns);
and defining a positive plate and a waveguide microcavity structure supported by the positive plate on the spin-coated photoresist layer by adopting a photoetching process, wherein the model of a photoetching machine is MA6.
And a second step of: and (3) evaporating 700nm metal nickel on the surface of the p-type gallium nitride layer 5 by adopting an electron beam evaporation process, and then removing residual photoresist by using an acetone solution.
And a third step of: and adopting a III-V group inductively coupled plasma etching process to etch the nitride layer downwards until reaching the upper surface of the n-type gallium nitride layer, transferring the graph of the disc and the waveguide structure defined in the first step into the quantum well layer 4 and the p-type gallium nitride layer 5 of the silicon-based nitride epitaxial wafer, and then removing residual metallic nickel on the wafer by using a dilute nitric acid solution.
Fourth step: spin-coating a photoresist AZ5214 on the upper surface of the silicon-based nitride epitaxial wafer by using a spin coater at a rotating speed of 4000 rpm for 50 seconds (the thickness of the photoresist is 2 micrometers); and defining a pattern of the negative pole disc and the waveguide microcavity structure supported by the negative pole disc on the photoresist layer spin-coated by adopting a photoetching process.
Fifth step: and (3) evaporating 700nm metal nickel on the upper surface of the pattern structure by adopting an electron beam evaporation process, and finally removing residual photoresist by using an acetone solution to strip the metal nickel.
Sixth step: and etching the n-type gallium nitride layer down to the upper surface of the silicon substrate layer along the defined complete waveguide structure by adopting an ICP etching process, thereby transferring the complete pattern structure down to the n-type gallium nitride layer 3 and the u-type gallium nitride layer 2, and finally removing metallic nickel by using a dilute nitric acid solution.
Seventh step: photoresist AZ5214 is spin-coated on the front surface of the wafer by using a spin coater at 4000 revolutions per minute for 50 seconds (the thickness of the photoresist is 2 microns), and an n-type region electrode pattern and a p-type region electrode pattern are respectively defined on the left side and the right side of the spin-coated photoresist layer by adopting a photoetching process, wherein the model of the photoresist is MA6.
Eighth step: and (3) evaporating metal (Au/Ni) on the upper surface of the electrode pattern by adopting an electron beam evaporation process, so that the p-type electrode 6 and the n-type electrode 7 are respectively plated on the p-type gallium nitride layer 5 and the n-type gallium nitride layer 3, and finally removing residual photoresist by using an acetone solution, and stripping the redundant Au/Ni.
And etching the silicon substrate layer 1 from the bottom of the waveguide microcavity by adopting an isotropic wet etching process, so that the suspended waveguide structure microcavity supported by the silicon column can be obtained. The etching solution is a mixed solution of hydrofluoric acid and dilute nitric acid with the ratio of 1:1.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced with equivalents; these modifications or substitutions do not depart from the essence of the corresponding technical solutions from the technical solutions of the embodiments of the present invention.
Claims (7)
1. The electric pump nitride suspended waveguide micro-laser is characterized in that the laser takes a silicon-based nitride epitaxial wafer as a carrier and comprises a silicon substrate layer (1), a u-type gallium nitride layer (2), an n-type gallium nitride layer (3), a quantum well layer (4), a p-type gallium nitride layer (5), a p-type electrode (6) arranged on the p-type gallium nitride layer (5) and an n-type electrode (7) arranged on the upper surface of the n-type gallium nitride layer (3), wherein the u-type gallium nitride layer (2), the n-type gallium nitride layer (3), the quantum well layer (4) and the p-type gallium nitride layer (5) are sequentially arranged from bottom to top; the laser is provided with a waveguide microcavity structure comprising an anode disc microcavity and a cathode disc microcavity, the anode disc microcavity and the cathode disc microcavity are connected through a waveguide, and the lower parts of the anode disc microcavity and the cathode disc microcavity are respectively supported by a silicon substrate layer (1).
2. The electric pump nitride suspended waveguide micro-laser according to claim 1, wherein the positive electrode disc microcavity structure penetrates through the p-type gallium nitride layer (5) and the quantum well layer (4).
3. The electric pump nitride suspended waveguide micro-laser according to claim 1 or 2, wherein the p-type electrode (6), the p-type gallium nitride layer (5) and the quantum well layer (4) are arranged in a positive disc microcavity; the n-type electrode (7) and the n-type gallium nitride layer (3) are arranged in the negative disc microcavity.
4. The pump nitride suspended waveguide micro-laser of claim 1, wherein the positive disc microcavity and the negative disc microcavity are stepped.
5. An electric pump nitride suspended waveguide micro-laser according to claim 1, characterized in that the n-type electrode (7) is formed in the centre of the negative disc microcavity; the p-type electrode (6) is formed in the center of the anode disc microcavity.
6. A method of making the electric pump nitride suspended waveguide micro-laser of any one of claims 1-5, comprising:
the first step: spin-coating photoresist on the upper surface of a p-type gallium nitride layer (5) of a silicon-based nitride epitaxial wafer, and defining a graph of a positive disc microcavity on the spin-coated photoresist layer by adopting a photoetching process;
and a second step of: evaporating metallic nickel on the graph of the positive plate micro-cavity by adopting an electron beam evaporation process, and removing residual photoresist;
and a third step of: etching the nitride layer downwards by adopting an ICP etching process until the upper surface of the n-type gallium nitride layer (3) is reached, so that the pattern structure defined in the first step is downwards transferred into the p-type gallium nitride layer (5) and the quantum well layer (4) of the silicon-based nitride epitaxial wafer, and then dilute nitric acid is used for removing metallic nickel;
fourth step: spin-coating photoresist on the upper surface of the silicon-based nitride epitaxial wafer, and defining a pattern of a negative disc microcavity on the spin-coated photoresist layer by adopting a photoetching process;
fifth step: evaporating metallic nickel on the surface of the pattern structure of the negative disc microcavity by adopting an electron beam evaporation process, and removing residual photoresist;
sixth step: etching the n-type gallium nitride layer (3) downwards along the defined complete negative disc microcavity structure by adopting an ICP etching process until reaching the upper surface of the silicon substrate layer (1), thereby transferring the pattern structure of the complete negative disc microcavity to the n-type gallium nitride layer (3) and the u-type gallium nitride layer (2) in sequence, and finally removing metallic nickel by using dilute nitric acid;
seventh step: spin-coating photoresist on the upper surface of the silicon-based nitride epitaxial wafer, and defining a p-type region electrode pattern and an n-type region electrode pattern on the spin-coated photoresist layer by adopting a photoetching process;
eighth step: evaporating a positive electrode on the upper surface of the electrode pattern of the p-type region by adopting an electron beam evaporation process, evaporating a negative electrode on the upper surface of the electrode pattern of the n-type region, respectively plating positive and negative electrodes on the p-type gallium nitride layer (5) and the n-type gallium nitride layer (3), finally removing residual photoresist, and stripping Au/Ni on the photoresist to obtain a p-type electrode (6) and an n-type electrode (7);
ninth step: and etching the silicon substrate layer (1) by using an isotropic wet method, so that silicon columns supporting discs at two sides of the waveguide are formed in the silicon substrate layer (1), and a completely suspended waveguide microcavity is obtained.
7. The method of making an electric pump nitride suspended waveguide micro-laser of claim 6, wherein the positive and negative electrodes are both evaporated Au/Ni.
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