CN108110614A - GaN base Distributed Feedback Laser of embedded Bragg grating and preparation method thereof - Google Patents

GaN base Distributed Feedback Laser of embedded Bragg grating and preparation method thereof Download PDF

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Publication number
CN108110614A
CN108110614A CN201711386192.4A CN201711386192A CN108110614A CN 108110614 A CN108110614 A CN 108110614A CN 201711386192 A CN201711386192 A CN 201711386192A CN 108110614 A CN108110614 A CN 108110614A
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China
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layer
gan base
grating
bragg
laser
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CN201711386192.4A
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Chinese (zh)
Inventor
李俊泽
李沫
张建
张健
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Institute of Electronic Engineering of CAEP
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Institute of Electronic Engineering of CAEP
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Priority to CN201711386192.4A priority Critical patent/CN108110614A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231Grating growth or overgrowth details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

GaN base DFB semiconductor laser the invention discloses embedded Bragg grating and preparation method thereof, this method step are:The extension limiting layer on GaN self-supported substrates;Using nanometer embossing SiO is utilized in substrate limitation layer surface2Prepare uniform Bragg grating;Prepare complete epitaxial wafer;Grating is carried out to bury growth and extension full laser device structure;Prepare chip of laser.The present invention solves the problems, such as that preparing hundred nano-scale grating using electron beam exposure is unable to large-area applications and excessively high manufacturing cost, the epitaxial wafer of preparation can carry out nanoheteroepitaxy curved dislocation using grating, dislocation is prevented to enter superstructure, improve epitaxial wafer crystal quality, simple process, compatible with common process, GaN base DFB semiconductor laser cost, the uniformity effectively improved can be greatly reduced.The Distributed Feedback Laser prepared using this method can apply to high power solid state laser pumping source because its single mode is selectively preferable.

Description

GaN base Distributed Feedback Laser of embedded Bragg grating and preparation method thereof
Technical field
The invention belongs to semiconductor photoelectric device fields, are related to GaN base DFB semiconductor laser, and in particular in one kind GaN base DFB semiconductor laser of embedding Bragg grating and preparation method thereof.
Background technology
Semiconductor laser is since the invention of the sixties in last century just because of its small size, high efficiency, low-cost and easy-to modulation The advantages that get the attention and tremendous development.Semiconductor laser is in the light source as communication system, if having dispersion, Then spectrum widening can reduce transmission bandwidth, so as to limit transmission rate.Distributed feed-back(DFB)Semiconductor laser is that light leads to The core devices of transmitting terminal in news system, single-mode output can effectively reduce dispersive broadening of the light in transmission process, and being suitble to should For applications such as High Speed Modulations.
One of Distributed Feedback Laser key technology is prepared by short-period grating.For GaN base Distributed Feedback Laser, screen periods are about For hundred nanometers, usual method is to prepare short week using the modes such as electron beam exposure or deep ultraviolet lasers two-beam interference exposure Phase optical grating construction.Area of raster prepared by such mode is small, if prepare large area grating, electron beam exposure take it is very long, Cost is excessively high.These are the reason is that one of bottleneck problem that limitation GaN base laser largely uses.
The content of the invention
To reduce GaN base Distributed Feedback Laser manufacturing cost, the present invention proposes a kind of GaN base DFB of embedded Bragg grating Semiconductor laser and preparation method thereof, this method prepare the required Prague light of Distributed Feedback Laser using nanometer embossing Grid, then optical grating construction is filled by MOCVD secondary epitaxies, complete the making of complete epitaxial wafer.It is different from the side of electron beam exposure Formula prepares embedded Bragg grating, and nano impression energy large area prepares high-precision optical grating construction so that optical grating construction can be complete It is realized on epitaxial wafer, technique can be simplified, shorten time and technical costs, be conducive to the preparation and application of GaN base Distributed Feedback Laser.
Technical scheme is as follows:
The GaN base DFB semiconductor laser of embedded Bragg grating, it is characterised in that:Including at least positioned at N-type GaN self-supportings Substrate, lower limit layer and Bragg-grating structure layer, the N-type GaN self-supported substrates are located at the bottom, and lower limit layer is located at N Above type GaN self-supported substrates, Bragg-grating structure layer is located above lower limit layer.On the Bragg-grating structure layer Also it is disposed with lower waveguide layer, Quantum well active district, electronic barrier layer, upper ducting layer, upper limiting layer, p-type doped layer.
The preparation method of the GaN base DFB semiconductor laser of above-mentioned embedded Bragg grating, it is characterised in that including as follows Step:
1) prepared by epitaxial wafer substrate
Epitaxial wafer is N-type GaN self-supported substrates using substrate, utilizes Metal Organic Chemical Vapor Deposition(MOCVD) Extension transition zone and lower limit layer on the substrate, the thickness of the lower limit layer is 2um, and substrate is made;
2) Bragg-grating structure layer is prepared
The Bragg-grating structure layer by calculating is prepared using nanometer embossing cooperation ICP lithographic techniques, meets GaN base and swashs The wavelength characteristic of light device, periodic grating structure is complete, etching injury is small, and lower limit layer surface forms Prague light through over etching Grid structure sheaf;
3) secondary epitaxy based on optical grating construction
It will prepare to be put into MOCVD after the substrate cleaning with Bragg-grating structure layer and carry out secondary epitaxy, in grating Nanoheteroepitaxy is completed in structure, i.e., AlGaN thin-film materials are obtained by extension on GaN optical grating constructions, and are sequentially completed down Ducting layer, Quantum well active district, electronic barrier layer, upper ducting layer, upper limiting layer, p-type doped layer;
4) prepared by laser
After secondary epitaxy grows completion, photoetching is carried out to it and is etched to make ridge table top, it is secondary after removing etch mask Etch electrode window through ray, metal evaporation electrode, N faces are thinned and the techniques such as electrode vapor deposition, scribing, cleavage, plated film complete laser It prepares.
Beneficial effects of the present invention are as follows:
The present invention is with SiO2Bragg-grating structure layer is prepared using nano impression for mask, and is prepared with MOCVD secondary epitaxies GaN base Distributed Feedback Laser finally makes Distributed Feedback Laser chip by ridge series of processes;Compared to electron beam exposure, deep ultraviolet Dual-beam etching etc. makes the traditional handicraft of optical grating construction, and Bragg grating is prepared with quick, low using nanometer embossing The advantages such as cost, high duplication.
The optical grating construction nanoheteroepitaxy that the present invention is prepared, since the extension on optical grating construction closes up into film energy The dislocation of MOCVD growths median surface generation is bent by image force, dislocation is prevented to be conducive to further to epitaxial wafer face extensions Promote GaN base laser epitaxial wafer crystal quality.
Description of the drawings
Fig. 1 is the preparation flow figure of the present invention.
Fig. 2 is the structure diagram of the substrate for use of the present invention.
Fig. 3 is the cross section structure figure that the present invention prepares Bragg-grating structure layer.
Fig. 4 is the construction profile that the present invention prepares Bragg-grating structure layer.
Fig. 5 is the epitaxial slice structure schematic diagram of the present invention.
Reference sign:
L1:N-type GaN self-supported substrates;L2:Lower limit layer;L3:Bragg-grating structure layer;L4:Lower waveguide layer;L5:Quantum Well Active area;L6:Electronic barrier layer;L7:Upper ducting layer;L8:Upper limiting layer;L9:P-type doped layer.
Specific embodiment
Technological means and effect used by further to illustrate the present invention to reach predetermined goal of the invention, below in conjunction with Legend illustrates the specific embodiment of the present invention.Following embodiment is not limited to the model of the present invention for illustrating the present invention It encloses.
The preparation method of GaN base DFB semiconductor laser proposed by the present invention is as shown in Figure 1, comprise the steps of:
Step P1, prepares substrate:MOCVD epitaxy transition zone and lower limit layer are used on N-type GaN self-supported substrates, such as Fig. 2 institutes Show;
Step P2, prepares Bragg grating:Bragg-grating structure layer is being made obtained by P1 on substrate using nanometer embossing, As shown in Figure 3 and Figure 4;
Step P3, secondary epitaxy laser structure:Realize that secondary epitaxy is completed to swash using MOCVD on Bragg-grating structure layer Light device epitaxial structure;
Step P4, ridge technique:GaN base Distributed Feedback Laser chip is prepared by ridge technique on extension chip base plinth.
Wherein:
Step P1 comprises the following steps:
On N-type GaN self-supported substrates L1, by delaying life outside MOCVD elder generations in-situ treatment high-temperature baking, the transition zone of short time Long 2um lower limit layers L2;
Step P2 is comprised the steps of:
Epitaxial wafer is taken out from MOCVD device, SiO is deposited using PECVD in extension on piece2Mask layer, SiO2Mask thickness is 70nm;Special coining glue is spun on surface, photoresist thickness is 200nm, and is toasted 2 minutes on hot plate, is pressed using nanometer Print machine realizes that the pattern transfer on from template to substrate makes Bragg grating, is etched using ICP and makes Bragg-grating structure Layer, as shown in Figure 2,3, then it is valid for secondary epitaxy to clean slice, thin piece by the uniform grating structure L3 of property performance period on substrate It is standby, comprising utilizing O2Plasma is removed in the polymer on surface in nano impression residue glue and etching process, and acetone, alcohol are gone Ionized water cleans, and spare with nitrogen gun drying;
Step P3 is comprised the steps of:
Secondary epitaxy is carried out as shown in figure 5, the epitaxial wafer with Bragg-grating structure layer is put into MOCVD, is followed successively by down Ducting layer L4, Quantum well active district L5, electronic barrier layer L6, upper ducting layer L7, upper limiting layer L8, p-type doped layer L9;Wherein, The periodicity of Quantum well active district L5 is 4, and p-type doped layer is divided into two layers of general doping and heavy doping;
Step P4 laser preparation processes comprise the steps of:
After the completion of secondary epitaxy growth, photoetching and etching are carried out to it.The etching of ridge waveguide is carved using ICP dry method Erosion, epitaxial wafer use silica to improve etching selection ratio as mask, prepare ridge table top.Next, it is gone using hydrofluoric acid Except earth silicon mask, then by secondarily etched, set carves an electrode window through ray on ridge table top;Existed using magnetron sputtering Epitaxial wafer P faces sputter Ti/Pt/Au;N faces are thinned, reduce to 120 μm, then in N faces vacuum evaporation layer of Au/Ge/ Sample is put into quick anneal oven and carries out alloy by Ni, a long thickness layer gold facilitates encapsulation again;Scribing is cleaved into Bar items;Most After be coated with front and rear Cavity surface film;Bar items are cleaved into singulated dies, through oversintering, spun gold pressure welding, lead welding etc., tube core is sealed Dress is completed to prepare.
More than, embodiment of the present invention is illustrated.It is all in the present invention the invention is not restricted to the above embodiment Spirit with spirit in, being equal for being done is replaced, improved, and should be included within the scope of the present invention.

Claims (8)

1. the GaN base DFB semiconductor laser of embedded Bragg grating, it is characterised in that:It is propped up certainly including at least positioned at N-type GaN Support substrate, lower limit layer and Bragg-grating structure layer, the N-type GaN self-supported substrates are located at the bottom, and lower limit layer is located at Above N-type GaN self-supported substrates, Bragg-grating structure layer is located above lower limit layer.
2. the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 1, it is characterised in that:It is described Lower waveguide layer, Quantum well active district, electronic barrier layer, upper ducting layer, the upper limit are also disposed on Bragg-grating structure layer Preparative layer, p-type doped layer.
3. prepare the method for the GaN base DFB semiconductor laser of the embedded Bragg grating described in claim 1 or 2, feature It is to comprise the following steps:
Step P1, with extending transition zone and lower limit layer outside MOCVD device on n type gallium nitride self-supported substrate;
Using nanometer embossing, uniform Bragg-grating structure layer is prepared on the surface of lower limit layer by step P2;
Step P3 carries out secondary epitaxy on the substrate with Bragg-grating structure layer, forms laser structure epitaxial wafer;
Step P4, based on laser structure epitaxial wafer, the preparation process for completing laser.
4. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special Sign is that the thickness of the lower limit layer is 2um.
5. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special Sign is, in the step P1, it is clear first to carry out 1080 DEG C of surfaces of in-situ high temperature to n type gallium nitride self-supported substrate by MOCVD Clean, reaction chamber is ammonia hydrogen atmosphere, then extension N-type lower limit layer.
6. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special Sign is, in the step P2, first deposits SiO using PECVD250 nanometers of layer, then by nano marking press in nano impression Pattern transfer is realized on glue, SiO is utilized by ICP etchings2Bragg-grating structure layer is etched as mask layer, by removing It is spare after glue, cleaning.
7. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special Sign is, in the step P3, by MOCVD after Bragg grating epitaxial lateral overgrowth thin-film material successively extension lower waveguide layer, The doping of Quantum well active district, electronic barrier layer, upper ducting layer, upper limiting layer and p-type doped layer, wherein p-type is divided into general doping With two layers of heavy doping.
8. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special Sign is that the preparation process of laser described in step P4 includes photoetching, ICP etchings, deposition SiO2, prepare electrical pumping window, It makes p-type Ohmic contact, substrate thinning polishing, make n-type Ohmic contact, light output end plated film and cleavage.
CN201711386192.4A 2017-12-20 2017-12-20 GaN base Distributed Feedback Laser of embedded Bragg grating and preparation method thereof Pending CN108110614A (en)

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Publication number Priority date Publication date Assignee Title
CN109462144A (en) * 2018-11-09 2019-03-12 中国工程物理研究院电子工程研究所 A kind of preparation method of GaN base low order surface grating Distributed Feedback Laser
CN111211488A (en) * 2020-01-16 2020-05-29 浙江博升光电科技有限公司 High contrast grating vertical cavity surface emitting laser and method of manufacture
US11133649B2 (en) * 2019-06-21 2021-09-28 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser

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CN105406355A (en) * 2015-12-22 2016-03-16 中国科学院半导体研究所 Manufacturing method for co-cavity dual-wavelength distributed feedback laser

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CN105406355A (en) * 2015-12-22 2016-03-16 中国科学院半导体研究所 Manufacturing method for co-cavity dual-wavelength distributed feedback laser

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109462144A (en) * 2018-11-09 2019-03-12 中国工程物理研究院电子工程研究所 A kind of preparation method of GaN base low order surface grating Distributed Feedback Laser
US11133649B2 (en) * 2019-06-21 2021-09-28 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser
US20210391692A1 (en) * 2019-06-21 2021-12-16 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser
CN111211488A (en) * 2020-01-16 2020-05-29 浙江博升光电科技有限公司 High contrast grating vertical cavity surface emitting laser and method of manufacture

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