CN108110614A - GaN base Distributed Feedback Laser of embedded Bragg grating and preparation method thereof - Google Patents
GaN base Distributed Feedback Laser of embedded Bragg grating and preparation method thereof Download PDFInfo
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- CN108110614A CN108110614A CN201711386192.4A CN201711386192A CN108110614A CN 108110614 A CN108110614 A CN 108110614A CN 201711386192 A CN201711386192 A CN 201711386192A CN 108110614 A CN108110614 A CN 108110614A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
GaN base DFB semiconductor laser the invention discloses embedded Bragg grating and preparation method thereof, this method step are:The extension limiting layer on GaN self-supported substrates;Using nanometer embossing SiO is utilized in substrate limitation layer surface2Prepare uniform Bragg grating;Prepare complete epitaxial wafer;Grating is carried out to bury growth and extension full laser device structure;Prepare chip of laser.The present invention solves the problems, such as that preparing hundred nano-scale grating using electron beam exposure is unable to large-area applications and excessively high manufacturing cost, the epitaxial wafer of preparation can carry out nanoheteroepitaxy curved dislocation using grating, dislocation is prevented to enter superstructure, improve epitaxial wafer crystal quality, simple process, compatible with common process, GaN base DFB semiconductor laser cost, the uniformity effectively improved can be greatly reduced.The Distributed Feedback Laser prepared using this method can apply to high power solid state laser pumping source because its single mode is selectively preferable.
Description
Technical field
The invention belongs to semiconductor photoelectric device fields, are related to GaN base DFB semiconductor laser, and in particular in one kind
GaN base DFB semiconductor laser of embedding Bragg grating and preparation method thereof.
Background technology
Semiconductor laser is since the invention of the sixties in last century just because of its small size, high efficiency, low-cost and easy-to modulation
The advantages that get the attention and tremendous development.Semiconductor laser is in the light source as communication system, if having dispersion,
Then spectrum widening can reduce transmission bandwidth, so as to limit transmission rate.Distributed feed-back(DFB)Semiconductor laser is that light leads to
The core devices of transmitting terminal in news system, single-mode output can effectively reduce dispersive broadening of the light in transmission process, and being suitble to should
For applications such as High Speed Modulations.
One of Distributed Feedback Laser key technology is prepared by short-period grating.For GaN base Distributed Feedback Laser, screen periods are about
For hundred nanometers, usual method is to prepare short week using the modes such as electron beam exposure or deep ultraviolet lasers two-beam interference exposure
Phase optical grating construction.Area of raster prepared by such mode is small, if prepare large area grating, electron beam exposure take it is very long,
Cost is excessively high.These are the reason is that one of bottleneck problem that limitation GaN base laser largely uses.
The content of the invention
To reduce GaN base Distributed Feedback Laser manufacturing cost, the present invention proposes a kind of GaN base DFB of embedded Bragg grating
Semiconductor laser and preparation method thereof, this method prepare the required Prague light of Distributed Feedback Laser using nanometer embossing
Grid, then optical grating construction is filled by MOCVD secondary epitaxies, complete the making of complete epitaxial wafer.It is different from the side of electron beam exposure
Formula prepares embedded Bragg grating, and nano impression energy large area prepares high-precision optical grating construction so that optical grating construction can be complete
It is realized on epitaxial wafer, technique can be simplified, shorten time and technical costs, be conducive to the preparation and application of GaN base Distributed Feedback Laser.
Technical scheme is as follows:
The GaN base DFB semiconductor laser of embedded Bragg grating, it is characterised in that:Including at least positioned at N-type GaN self-supportings
Substrate, lower limit layer and Bragg-grating structure layer, the N-type GaN self-supported substrates are located at the bottom, and lower limit layer is located at N
Above type GaN self-supported substrates, Bragg-grating structure layer is located above lower limit layer.On the Bragg-grating structure layer
Also it is disposed with lower waveguide layer, Quantum well active district, electronic barrier layer, upper ducting layer, upper limiting layer, p-type doped layer.
The preparation method of the GaN base DFB semiconductor laser of above-mentioned embedded Bragg grating, it is characterised in that including as follows
Step:
1) prepared by epitaxial wafer substrate
Epitaxial wafer is N-type GaN self-supported substrates using substrate, utilizes Metal Organic Chemical Vapor Deposition(MOCVD)
Extension transition zone and lower limit layer on the substrate, the thickness of the lower limit layer is 2um, and substrate is made;
2) Bragg-grating structure layer is prepared
The Bragg-grating structure layer by calculating is prepared using nanometer embossing cooperation ICP lithographic techniques, meets GaN base and swashs
The wavelength characteristic of light device, periodic grating structure is complete, etching injury is small, and lower limit layer surface forms Prague light through over etching
Grid structure sheaf;
3) secondary epitaxy based on optical grating construction
It will prepare to be put into MOCVD after the substrate cleaning with Bragg-grating structure layer and carry out secondary epitaxy, in grating
Nanoheteroepitaxy is completed in structure, i.e., AlGaN thin-film materials are obtained by extension on GaN optical grating constructions, and are sequentially completed down
Ducting layer, Quantum well active district, electronic barrier layer, upper ducting layer, upper limiting layer, p-type doped layer;
4) prepared by laser
After secondary epitaxy grows completion, photoetching is carried out to it and is etched to make ridge table top, it is secondary after removing etch mask
Etch electrode window through ray, metal evaporation electrode, N faces are thinned and the techniques such as electrode vapor deposition, scribing, cleavage, plated film complete laser
It prepares.
Beneficial effects of the present invention are as follows:
The present invention is with SiO2Bragg-grating structure layer is prepared using nano impression for mask, and is prepared with MOCVD secondary epitaxies
GaN base Distributed Feedback Laser finally makes Distributed Feedback Laser chip by ridge series of processes;Compared to electron beam exposure, deep ultraviolet
Dual-beam etching etc. makes the traditional handicraft of optical grating construction, and Bragg grating is prepared with quick, low using nanometer embossing
The advantages such as cost, high duplication.
The optical grating construction nanoheteroepitaxy that the present invention is prepared, since the extension on optical grating construction closes up into film energy
The dislocation of MOCVD growths median surface generation is bent by image force, dislocation is prevented to be conducive to further to epitaxial wafer face extensions
Promote GaN base laser epitaxial wafer crystal quality.
Description of the drawings
Fig. 1 is the preparation flow figure of the present invention.
Fig. 2 is the structure diagram of the substrate for use of the present invention.
Fig. 3 is the cross section structure figure that the present invention prepares Bragg-grating structure layer.
Fig. 4 is the construction profile that the present invention prepares Bragg-grating structure layer.
Fig. 5 is the epitaxial slice structure schematic diagram of the present invention.
Reference sign:
L1:N-type GaN self-supported substrates;L2:Lower limit layer;L3:Bragg-grating structure layer;L4:Lower waveguide layer;L5:Quantum Well
Active area;L6:Electronic barrier layer;L7:Upper ducting layer;L8:Upper limiting layer;L9:P-type doped layer.
Specific embodiment
Technological means and effect used by further to illustrate the present invention to reach predetermined goal of the invention, below in conjunction with
Legend illustrates the specific embodiment of the present invention.Following embodiment is not limited to the model of the present invention for illustrating the present invention
It encloses.
The preparation method of GaN base DFB semiconductor laser proposed by the present invention is as shown in Figure 1, comprise the steps of:
Step P1, prepares substrate:MOCVD epitaxy transition zone and lower limit layer are used on N-type GaN self-supported substrates, such as Fig. 2 institutes
Show;
Step P2, prepares Bragg grating:Bragg-grating structure layer is being made obtained by P1 on substrate using nanometer embossing,
As shown in Figure 3 and Figure 4;
Step P3, secondary epitaxy laser structure:Realize that secondary epitaxy is completed to swash using MOCVD on Bragg-grating structure layer
Light device epitaxial structure;
Step P4, ridge technique:GaN base Distributed Feedback Laser chip is prepared by ridge technique on extension chip base plinth.
Wherein:
Step P1 comprises the following steps:
On N-type GaN self-supported substrates L1, by delaying life outside MOCVD elder generations in-situ treatment high-temperature baking, the transition zone of short time
Long 2um lower limit layers L2;
Step P2 is comprised the steps of:
Epitaxial wafer is taken out from MOCVD device, SiO is deposited using PECVD in extension on piece2Mask layer, SiO2Mask thickness is
70nm;Special coining glue is spun on surface, photoresist thickness is 200nm, and is toasted 2 minutes on hot plate, is pressed using nanometer
Print machine realizes that the pattern transfer on from template to substrate makes Bragg grating, is etched using ICP and makes Bragg-grating structure
Layer, as shown in Figure 2,3, then it is valid for secondary epitaxy to clean slice, thin piece by the uniform grating structure L3 of property performance period on substrate
It is standby, comprising utilizing O2Plasma is removed in the polymer on surface in nano impression residue glue and etching process, and acetone, alcohol are gone
Ionized water cleans, and spare with nitrogen gun drying;
Step P3 is comprised the steps of:
Secondary epitaxy is carried out as shown in figure 5, the epitaxial wafer with Bragg-grating structure layer is put into MOCVD, is followed successively by down
Ducting layer L4, Quantum well active district L5, electronic barrier layer L6, upper ducting layer L7, upper limiting layer L8, p-type doped layer L9;Wherein,
The periodicity of Quantum well active district L5 is 4, and p-type doped layer is divided into two layers of general doping and heavy doping;
Step P4 laser preparation processes comprise the steps of:
After the completion of secondary epitaxy growth, photoetching and etching are carried out to it.The etching of ridge waveguide is carved using ICP dry method
Erosion, epitaxial wafer use silica to improve etching selection ratio as mask, prepare ridge table top.Next, it is gone using hydrofluoric acid
Except earth silicon mask, then by secondarily etched, set carves an electrode window through ray on ridge table top;Existed using magnetron sputtering
Epitaxial wafer P faces sputter Ti/Pt/Au;N faces are thinned, reduce to 120 μm, then in N faces vacuum evaporation layer of Au/Ge/
Sample is put into quick anneal oven and carries out alloy by Ni, a long thickness layer gold facilitates encapsulation again;Scribing is cleaved into Bar items;Most
After be coated with front and rear Cavity surface film;Bar items are cleaved into singulated dies, through oversintering, spun gold pressure welding, lead welding etc., tube core is sealed
Dress is completed to prepare.
More than, embodiment of the present invention is illustrated.It is all in the present invention the invention is not restricted to the above embodiment
Spirit with spirit in, being equal for being done is replaced, improved, and should be included within the scope of the present invention.
Claims (8)
1. the GaN base DFB semiconductor laser of embedded Bragg grating, it is characterised in that:It is propped up certainly including at least positioned at N-type GaN
Support substrate, lower limit layer and Bragg-grating structure layer, the N-type GaN self-supported substrates are located at the bottom, and lower limit layer is located at
Above N-type GaN self-supported substrates, Bragg-grating structure layer is located above lower limit layer.
2. the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 1, it is characterised in that:It is described
Lower waveguide layer, Quantum well active district, electronic barrier layer, upper ducting layer, the upper limit are also disposed on Bragg-grating structure layer
Preparative layer, p-type doped layer.
3. prepare the method for the GaN base DFB semiconductor laser of the embedded Bragg grating described in claim 1 or 2, feature
It is to comprise the following steps:
Step P1, with extending transition zone and lower limit layer outside MOCVD device on n type gallium nitride self-supported substrate;
Using nanometer embossing, uniform Bragg-grating structure layer is prepared on the surface of lower limit layer by step P2;
Step P3 carries out secondary epitaxy on the substrate with Bragg-grating structure layer, forms laser structure epitaxial wafer;
Step P4, based on laser structure epitaxial wafer, the preparation process for completing laser.
4. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special
Sign is that the thickness of the lower limit layer is 2um.
5. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special
Sign is, in the step P1, it is clear first to carry out 1080 DEG C of surfaces of in-situ high temperature to n type gallium nitride self-supported substrate by MOCVD
Clean, reaction chamber is ammonia hydrogen atmosphere, then extension N-type lower limit layer.
6. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special
Sign is, in the step P2, first deposits SiO using PECVD250 nanometers of layer, then by nano marking press in nano impression
Pattern transfer is realized on glue, SiO is utilized by ICP etchings2Bragg-grating structure layer is etched as mask layer, by removing
It is spare after glue, cleaning.
7. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special
Sign is, in the step P3, by MOCVD after Bragg grating epitaxial lateral overgrowth thin-film material successively extension lower waveguide layer,
The doping of Quantum well active district, electronic barrier layer, upper ducting layer, upper limiting layer and p-type doped layer, wherein p-type is divided into general doping
With two layers of heavy doping.
8. the preparation method of the GaN base DFB semiconductor laser of embedded Bragg grating according to claim 3, special
Sign is that the preparation process of laser described in step P4 includes photoetching, ICP etchings, deposition SiO2, prepare electrical pumping window,
It makes p-type Ohmic contact, substrate thinning polishing, make n-type Ohmic contact, light output end plated film and cleavage.
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Cited By (3)
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CN109462144A (en) * | 2018-11-09 | 2019-03-12 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of GaN base low order surface grating Distributed Feedback Laser |
CN111211488A (en) * | 2020-01-16 | 2020-05-29 | 浙江博升光电科技有限公司 | High contrast grating vertical cavity surface emitting laser and method of manufacture |
US11133649B2 (en) * | 2019-06-21 | 2021-09-28 | Palo Alto Research Center Incorporated | Index and gain coupled distributed feedback laser |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109462144A (en) * | 2018-11-09 | 2019-03-12 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of GaN base low order surface grating Distributed Feedback Laser |
US11133649B2 (en) * | 2019-06-21 | 2021-09-28 | Palo Alto Research Center Incorporated | Index and gain coupled distributed feedback laser |
US20210391692A1 (en) * | 2019-06-21 | 2021-12-16 | Palo Alto Research Center Incorporated | Index and gain coupled distributed feedback laser |
CN111211488A (en) * | 2020-01-16 | 2020-05-29 | 浙江博升光电科技有限公司 | High contrast grating vertical cavity surface emitting laser and method of manufacture |
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