CN105826814A - Method of preparing indium phosphide-based narrow-ridge waveguide semiconductor laser - Google Patents
Method of preparing indium phosphide-based narrow-ridge waveguide semiconductor laser Download PDFInfo
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- CN105826814A CN105826814A CN201610333092.4A CN201610333092A CN105826814A CN 105826814 A CN105826814 A CN 105826814A CN 201610333092 A CN201610333092 A CN 201610333092A CN 105826814 A CN105826814 A CN 105826814A
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- indium phosphide
- ridge waveguide
- semiconductor laser
- preparation
- photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
Abstract
A method of preparing an indium phosphide-based narrow-ridge waveguide semiconductor laser comprises the following steps: performing lithography on a P-side contact layer of an indium phosphide-based epitaxial wafer, and transferring the pattern of a striped-ridge waveguide on a lithography plate onto photoresist; with the photoresist as a mask, corroding the P-side contact layer not protected by photoresist on part of the indium phosphide-based epitaxial wafer to form a ridged waveguide; gluing the indium phosphide-based epitaxial wafer coated with the photoresist, removing a bottom film, and sputtering a dielectric film; stripping the photoresist and the dielectric film on the ridged waveguide and forming an electrical injection window; sputtering or evaporating metal on the front of the indium phosphide-based epitaxial wafer to form a P planar electrode; thinning and polishing the N-type substrate of the indium phosphide-based epitaxial wafer, evaporating metal on the N-type substrate to form an N planar electrode, and carrying out alloying to form a chip; and sintering the chip onto a heat sink, and leading wires to complete preparation. The process is simple, and the product yield is high.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, refer in particular to the preparation method of the narrow ridge waveguide semiconductor laser of a kind of indium phosphide.
Background technology
Indium phosphide semiconductor laser is because of the ripe preparation technology of laser instrument used by its compatible Conventional communication, and easily realizes the advantage such as integrated with other device and be with a wide range of applications.At present, commercial semiconductor laser is mainly indium phosphide semiconductor laser.
The width of laser instrument ridge waveguide and its performance have much relations.Narrow ridge waveguide has great significance for realizing laser instrument list transverse mode lasing, reduction threshold current etc..But, limited by etching condition and optical limit, along with narrowing of ridge waveguide, on ridge waveguide, the technology difficulty of alignment electrode injection window is just greatly increased.In order to solve this technical barrier, thus improving efficiency, some research groups are attempted distinct methods and are solved this problem both at home and abroad.According to the character that various substrates are different, scheme is also not quite similar.Such as, for Sapphire Substrate, it is possible to use the character that substrate light transmittance is high, the technological means of back side photoetching is used to realize electrical pumping window；It addition, also have the GaN epitaxy sheet method etc. by the band the most ultrasonic stripping of glue plasma enhanced chemical vapor deposition (PECVD) somatomedin material.But, for the epitaxial wafer of indium phosphide, its quality is highly brittle, it is easy to fragmentation.So, ultrasonic stripping mode such as grade can not use safely.Again due to the characteristic of non-refractory of common photoresist, somatomedin thin film can not use higher temperature, and the dielectric film quality that PECVD grows at low temperatures is the best, so, the mode of somatomedin thin film is also required to careful selection.The mode temperature requirement to be met of selected somatomedin thin film, also to meet requirement in directivity, and the thin film i.e. grown well to wrap the sidewall of ridge, the most just can prevent electric leakage.All difficulties require that the narrow ridge waveguide that we explore applicable indium phosphide quasiconductor opens the concrete technology implementation method of electrical pumping window, and the research of this problem is the most meaningful.
Summary of the invention
It is an object of the invention to provide the preparation method of the narrow ridge waveguide semiconductor laser of a kind of indium phosphide.Selecting band glue somatomedin thin film manner when, growth temperature to be considered, it is impossible to higher than the highest bearing temperature of photoresist, otherwise can cause photoresist degeneration；It is accounted for the directivity of growth pattern, the i.e. dielectric film parcel for ridge waveguide sidewall, adequate thickness to be had, otherwise will leak electricity.Selecting stripping means when, also to avoid the modes such as ultrasonic, need the stripping means groping to be suitable for InP substrate, in case fragment.
The present invention provides the preparation method of the narrow ridge waveguide semiconductor laser of a kind of indium phosphide, comprises the steps:
Step 1: carry out photoetching on the contact layer of indium phosphide epitaxial wafer P face, the figure of bar shaped ridge waveguide in reticle is transferred on photoresist；
Step 2: with photoresist as mask, etch away parts indium phosphide epitaxial wafer is not photo-etched the P face contact layer part of glue protection, forms ridge waveguide；
Step 3: the indium phosphide epitaxial wafer gluing with photoresist is removed counterdie, thereon one layer of dielectric film of sputtering；
Step 4: peel off the photoresist on ridge waveguide and dielectric film, forms electrical pumping window；
Step 5: at the sputtering of indium phosphide epitaxial wafer front or evaporated metal, form p side electrode；
Step 6: by thinning for the N-type substrate of indium phosphide epitaxial wafer, polishing, evaporated metal in N-type substrate, forms N face electrode, and alloy, forms substrate；
Step 7: substrate is sintered on heat sink, and go between, complete preparation.
From technique scheme it can be seen that the method have the advantages that
1, the preparation method of the narrow ridge waveguide semiconductor laser of a kind of indium phosphide that the present invention provides, it is possible to achieve open electrical pumping window for indium phosphide semiconductor laser any width ridge waveguide.
2, the preparation method of the narrow ridge waveguide semiconductor laser of a kind of indium phosphide that the present invention provides, open electrical pumping windowhood method with other are conventional compared with, technique is simpler, is more easy to realize.
3, the preparation method of the narrow ridge waveguide semiconductor laser of a kind of indium phosphide that the present invention provides, is to be suitable for InP-based materials character specially, does not has any injury to epitaxial wafer.
Accompanying drawing explanation
For making technical scheme and advantage clearer, describe in detail, wherein below in conjunction with instantiation and accompanying drawing:
Fig. 1 is the flow chart of the inventive method；
Fig. 2 is the structural representation of the present invention；
Fig. 3 is the current-voltage curve (in Chinese) of indium phosphide semiconductor laser in the present invention.
Detailed description of the invention
Referring to shown in Fig. 1, Fig. 2, the present invention provides the preparation method of the narrow ridge waveguide semiconductor laser of a kind of indium phosphide, comprises the steps:
Step 1: use the photoetching process of standard to carry out photoetching on indium phosphide epitaxial wafer P face contact layer 2, the figure of bar shaped ridge waveguide in reticle is transferred on photoresist, described photoresist thickness is 1 micron-3 microns, and described epitaxial slice structure is followed successively by n type inp substrate, N face indium phosphide limiting layer (n-type doping), N face ducting layer (undoped p), SQW/quantum dot active region, P face ducting layer (undoped p), P face indium phosphide limiting layer (p-type doping), InGaAs ohmic contact layer (p-type heavy doping) from bottom to top；
Step 2: with photoresist as mask, etch away parts indium phosphide epitaxial wafer is not photo-etched P face contact layer 2 part of glue protection, forms ridge waveguide, and the corrosive liquid of described corrosion P face contact layer 2 is HNO3∶HBr∶H2O=1: 1: 10, etching time and the degree of depth are determined by step instrument, and corrosion depth is 200 nanometer-2 microns；
Step 3: the indium phosphide epitaxial wafer gluing with photoresist is removed counterdie, one layer of dielectric film 5 of sputtering thereon, the gas that described gluing process is used is oxygen or nitrogen, power is 100W-500W, time is 15s-1min, the material of described dielectric film 5 is silicon oxide or silicon nitride, and thickness is 100nm-500nm；
Step 4: peel off the photoresist on ridge waveguide and dielectric film 5, forms electrical pumping window, and described stripping includes: soak more than 20 hours in acetone soln；Again with wet acetone cotton balls along the wiping of ridge waveguide direction；
Step 5: at the sputtering of indium phosphide epitaxial wafer front or evaporated metal, forming p side electrode 6, the material of described p side electrode 6 is Ti/Au, Au/Zn/Au or Cr/Au；
Step 6: by thinning for the N-type substrate 1 of indium phosphide epitaxial wafer, polishing; described N-type substrate 1 is thinned to 90-200 micron; evaporated metal in N-type substrate 1; forming N face electrode 7, the material of described N face electrode 7 is Au/Ge/Ni or Cr/Au, and alloy; described alloy condition is nitrogen protection; temperature is 200 DEG C-450 DEG C, and the time is 30s-1min, forms substrate；
Step 7: substrate is sintered on heat sink, and go between, complete preparation.
The current-voltage curve of the indium phosphide semiconductor laser shown in Fig. 3 understands, and the semiconductor laser I-V characteristic that profit makes in this way is fine, there is not electric leakage.
In particular embodiments described above; the technical problem to be solved in the present invention and technical scheme have been carried out specific description in greater detail; it is it should be understood that; the above-described specific embodiment being only the present invention; it is not limited to the present invention; in all spirit in the present invention, thought and spirit, any modification, equivalent substitution and improvement etc. done, within all should being included in protection scope of the present invention.
Claims (10)
1. a preparation method for the narrow ridge waveguide semiconductor laser of indium phosphide, comprises the steps:
Step 1: carry out photoetching on the contact layer of indium phosphide epitaxial wafer P face, the figure of bar shaped ridge waveguide in reticle is transferred on photoresist；
Step 2: with photoresist as mask, etch away parts indium phosphide epitaxial wafer is not photo-etched the P face contact layer part of glue protection, forms ridge waveguide；
Step 3: the indium phosphide epitaxial wafer gluing with photoresist is removed counterdie, thereon one layer of dielectric film of sputtering；
Step 4: peel off the photoresist on ridge waveguide and dielectric film, forms electrical pumping window；
Step 5: at the sputtering of indium phosphide epitaxial wafer front or evaporated metal, form p side electrode；
Step 6: by thinning for the N-type substrate of indium phosphide epitaxial wafer, polishing, evaporated metal in N-type substrate, forms N face electrode, and alloy, forms substrate；
Step 7: substrate is sintered on heat sink, and go between, complete preparation.
2. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, wherein photoresist thickness is 1 micron-3 microns.
3. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, wherein the corrosive liquid of corrosion P face contact layer is HNO3∶HBr∶H2O=1: 1: 10, corrosion depth is 200 nanometer-2 microns.
4. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, the gas that wherein gluing process is used is oxygen or nitrogen, and power is 100W-500W, and the time is 15s-1min.
5. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, wherein the material of dielectric film is silicon oxide or silicon nitride, and thickness is 100nm-500nm.
6. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, wherein peels off and includes: soak more than 20 hours in acetone soln；Again with wet acetone cotton balls along the wiping of ridge waveguide direction.
7. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, wherein the material of p side electrode is Ti/Au, Au/Zn/Au or Cr/Au.
8. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, is wherein thinned to 90-200 micron by N-type substrate.
9. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, wherein the material of N face electrode is Au/Ge/Ni or Cr/Au.
10. the preparation method of the narrow ridge waveguide semiconductor laser of indium phosphide as claimed in claim 1, wherein alloy condition is nitrogen protection, and temperature is 200 DEG C-450 DEG C, and the time is 30s-1min.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365516A (en) * | 2018-02-13 | 2018-08-03 | 中国科学院半导体研究所 | The semiconductor laser and preparation method thereof of ridge array is coupled based on indium phosphide |
| CN108649428A (en) * | 2018-06-26 | 2018-10-12 | 华慧芯科技（天津）有限公司 | The realization technique of graphical window on RWG type Distributed Feedback Laser vallums |
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| JPH0927656A (en) * | 1995-07-12 | 1997-01-28 | Oki Electric Ind Co Ltd | Manufacture of ridge waveguide semiconductor laser |
| CN1521907A (en) * | 2003-01-27 | 2004-08-18 | 中国科学院半导体研究所 | Window-isolated minimal-hole semiconductor laser and manufacture method |
| CN1983750A (en) * | 2005-12-14 | 2007-06-20 | 中国科学院半导体研究所 | Device structure and its production for single-modulus quantum cascade laser |
| CN101005196A (en) * | 2006-01-20 | 2007-07-25 | 中国科学院半导体研究所 | Two dimension array integrated module of wavelength selective distribution feedback laser |
| US20100124244A1 (en) * | 2008-11-18 | 2010-05-20 | Atsushi Higuchi | Semiconductor laser device |
| CN102263370A (en) * | 2010-10-09 | 2011-11-30 | 吉林大学 | p-ZnO and n-GaN combined multi-layer terminal emitting lasers and preparation methods |
| CN104538843A (en) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | Manufacturing method of semiconductor laser chip for carbon dioxide detection |
-
2016
- 2016-05-19 CN CN201610333092.4A patent/CN105826814A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927656A (en) * | 1995-07-12 | 1997-01-28 | Oki Electric Ind Co Ltd | Manufacture of ridge waveguide semiconductor laser |
| CN1521907A (en) * | 2003-01-27 | 2004-08-18 | 中国科学院半导体研究所 | Window-isolated minimal-hole semiconductor laser and manufacture method |
| CN1983750A (en) * | 2005-12-14 | 2007-06-20 | 中国科学院半导体研究所 | Device structure and its production for single-modulus quantum cascade laser |
| CN101005196A (en) * | 2006-01-20 | 2007-07-25 | 中国科学院半导体研究所 | Two dimension array integrated module of wavelength selective distribution feedback laser |
| US20100124244A1 (en) * | 2008-11-18 | 2010-05-20 | Atsushi Higuchi | Semiconductor laser device |
| CN102263370A (en) * | 2010-10-09 | 2011-11-30 | 吉林大学 | p-ZnO and n-GaN combined multi-layer terminal emitting lasers and preparation methods |
| CN104538843A (en) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | Manufacturing method of semiconductor laser chip for carbon dioxide detection |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365516A (en) * | 2018-02-13 | 2018-08-03 | 中国科学院半导体研究所 | The semiconductor laser and preparation method thereof of ridge array is coupled based on indium phosphide |
| CN108649428A (en) * | 2018-06-26 | 2018-10-12 | 华慧芯科技（天津）有限公司 | The realization technique of graphical window on RWG type Distributed Feedback Laser vallums |
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Inventor after: Yang Tao Inventor after: Xu Feng Inventor after: Luo Shuai Inventor after: Gao Feng Inventor after: Ji Haiming Inventor before: Yang Tao Inventor before: Xu Feng Inventor before: Luo Shuai Inventor before: Gao Feng Inventor before: Ji Haiming |
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Application publication date: 20160803 |
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