CN105206727A - InGaN/GaN multi-quantum-well single-nano-pole LED device and manufacturing method thereof - Google Patents
InGaN/GaN multi-quantum-well single-nano-pole LED device and manufacturing method thereof Download PDFInfo
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- 238000002955 isolation Methods 0.000 claims description 24
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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Abstract
The invention discloses an InGaN/GaN multi-quantum-well single-nano-pole LED device. The distance between an n-type GaN layer and a p-type GaN layer at the two ends of an InGaN/GaN multi-quantum-well nano-pole and the corresponding portions of a metal electrode film is smaller than or equal to 100 nm or the n-type GaN layer and the p-type GaN layer at the two ends of the InGaN/GaN multi-quantum-well nano-pole are in direct contact with the metal electrode film, a middle InxGa1-x/GaN quantum well active layer is isolated from the metal electrode film, and metal electrodes are secondarily deposited at the portions where the two ends of the InGaN/GaN multi-quantum-well nano-pole are in contact with the metal electrode film through a focused ion beam system to form ohmic contact. A method of the InGaN/GaN multi-quantum-well single-nano-pole LED device is mainly characterized in that ohmic contact of the nano-pole is formed through ultraviolet photoetching and focusing ion beam secondary depositing. By means of the method, the alignment accuracy between the electrodes and the nano-pole can be remarkably improved, the preparing success rate can be remarkably increased, multiple InGaN/GaN quantum wells are not damaged while the electrodes are prepared, good metal semiconductor contact is achieved accordingly, the electric injection current density is improved, and therefore luminance is improved. The method is suitable for preparing a single-nano-pole InGaN/GaN light emitting diode, and is particularly suitable for nanometer devices with the sizes smaller than the limitation of ultraviolet photoetching.
Description
Technical field
The present invention relates to a kind of InGaN/GaN Multiple Quantum Well list nano-pillar LED component and preparation method thereof, belong to field of semiconductor illumination.
Background technology
In recent years, semiconductor nanowires/low-dimensional quantum structure such as post, nano dot is subject to the extensive concern of domestic and international academia and industrial circle, property can be shown in mechanics, biochemistry, electromagnetism and photoelectron with hope, and in microsystem, probe into carrier transport mechanism.Nanoscale heterojunction has higher geometry restriction effect because of it, and novel is functional, in field of optoelectronic devices development rapidly, is in particular in LED light-emitting diode, laser, solar cell, detector etc.Sub-wavelength luminescent device and high-polarization illuminating source are the key factors that development light display is shown, are especially embodied on the high-resolution light source of development.Make a general survey of numerous semi-conducting material, III-nitride material is direct gap semiconductor, and its band gap covers from infrared visible ray to ultraviolet band, is the ideal material realizing solid-state illumination and low power consumption display.
The InGaN/GaN Multiple Quantum Well LED component of nanoscale is compared to conventional plane LED component, and its optical property has greatly improved, and its stress is largely released, and the piezoelectric polarization of reduction correspondingly can cut down quantum limitation effect.Secondly, the extraction efficiency of the light of the InGaN/GaN Multiple Quantum Well LED component of this one-dimentional structure is enhanced.Again, due to structural anisotropy, 1-dimention nano post LED can produce the very high linearly polarized light of degree of polarization.Because physical dimension I realizes super-resolution, illuminating source.These significant advantages make single nano-pillar LED pole be expected to the backlight of alternative existing commercialization planar LED for display screen, and the formation of LED background light source still depends on polarization optical element additional in liquid crystal display at present.
For how realizing the single LED nano-device of 1 dimension, various countries researchers have employed a lot of method, as selective epitaxy growing nano array in patterned substrate, this secondary epitaxy technological difficulties are to form N-shaped, p-type doping, once cannot heavy doping be formed, directly will affect and form P-N junction and even affect its electric property.Secondly, in this epitaxial growth nucleocapsid structure InGaNGaN nano-pillar on a si substrate, because it has larger lattice mismatch and thermal coefficient of expansion, easily form more defect.In addition, it is emphasized that the aspect ratio of nano-pillar plays an important role on the degree of polarization of optics, and the aspect ratio how better controlling nano-pillar is also the another difficult point of secondary epitaxy.
Secondly, how to realize another difficult point that nano-device electrical pumping is also this problem, this not only constrains excavates the further research of its performance, also counteracts that development and the application of nano-device.At present, patent documentation CN103077888A discloses a kind of method for preparing electrode on single nano wire based on electron beam exposure technique, it is noted herein that, this electron beam exposure technique is comparatively complicated, prepare costly single, and easily peel off at link nano wires such as strippings, therefore rate of finished products is lower.AppliedPhysicsLetter periodical reports and adopts ultraviolet light photolithographicallpatterned to prepare InGaN/GaN Multiple Quantum Well list nano-pillar LED component, show the good characteristics of luminescence, but be diffraction limit in this single its limitation of ultraviolet light photoetching technique, for the single nano wire being less than 1 micron long, this processing technology can not realize.
At present, patent documentation CN103383980A discloses one and utilizes the soft nanometer embossing of ultraviolet (UV-NIL) to prepare the method for orderly gallium nitride nano-array.The method adopts the gallium nitride nano-pillar of PMMA and ultra-violet curing glue double-layer glue technology ultraviolet soft impression preparation large area, low defect, thus realizes array in order and have the gallium nitride nano-array of homogeneous diameter length.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of InGaN/GaN Multiple Quantum Well list nano-pillar LED component with low-dimensional quantum structure is provided.
The technical solution used in the present invention is: a kind of InGaN/GaN Multiple Quantum Well list nano-pillar LED component, comprises
Device substrate;
Deposition device isolation layer over a device substrate;
Be plated in the metal electrode rete on device isolation layer;
Described metal electrode film surface makes the region that metal electrode film is divided into multiple mutual isolation by one or more groove in length and breadth by lithography, also comprise at least one InGaN/GaN Multiple Quantum Well nano-pillar, described InGaN/GaN Multiple Quantum Well nano-pillar at least comprises the n-type GaN layer grown successively on a sapphire substrate, In
xga
1-xn/GaN mqw active layer and p-type GaN layer, the width of described groove is less than the length of whole InGaN/GaN Multiple Quantum Well nano-pillar, described InGaN/GaN Multiple Quantum Well nano-pillar is transferred to the metal electrode rete with groove figure, and be across groove, the distance of the metal electrode film of the n-type GaN layer at two ends and p-type GaN layer distance two different area of isolation is within 100nm or directly contact the metal electrode film of two different area of isolation, and the In of centre
xga
1-xn/GaN mqw active layer and metal electrode film are isolated, and the position contacted with metal electrode film at InGaN/GaN Multiple Quantum Well nano-pillar two ends forms ohmic contact by focused ion beam system secondary deposition metal electrode.Preferably, described In
xga
1-xthe periodicity of N/GaN mqw active layer is 10 ~ 15, described x scope: 0.12≤x≤0.35, emission wavelength at 430 ~ 550nm, the thickness 300 ~ 500nm of p-type GaN layer, the thickness of n-type GaN layer 1.5 ~ 3 μm.
Preferably, the diameter of described InGaN/GaN Multiple Quantum Well nano-pillar is 70 ~ 500nm, and length is 0.8 ~ 3.5 μm.
Preferably, described device substrate is the material with excellent surface evenness, comprises hard material and flexible material.
Preferably, described device isolation layer is SiO
2layer or Si
3c
4layer, thickness is 50 ~ 1000nm.
Preferably, described metal electrode rete is Ni/Au or Ti/Au bilayer or the metal multilayer film of the acquisition of electron evaporation deposition, and thickness is 10 ~ 500nm.
Preferably, the metal electrode of described secondary deposition is Pt electrode, is of a size of 200-500nm × 200-500nm, and height of deposition is 200-500nm.
The invention also discloses the preparation method of above-mentioned InGaN/GaN Multiple Quantum Well list nano-pillar LED component, its step comprises:
A, preparation InGaN/GaN Multiple Quantum Well nano-pillar, and dispersion obtains nano-pillar suspension-turbid liquid in a solvent, obtained InGaN/GaN Multiple Quantum Well nano-pillar at least comprises the n-type GaN layer grown successively on a sapphire substrate, In
xga
1-xn/GaN mqw active layer and p-type GaN layer;
B, choose the device substrate with excellent surface evenness, cleaning substrate: adopt acetone, alcohol, deionized water ultrasonic cleaning successively, each 3 ~ 5 minutes of each step;
C, over a device substrate employing plasma reinforced chemical vapour deposition method deposit a layer dielectric insulating barrier;
D, on device isolation layer photoresist in spin coating, uv-exposure produces figure;
E, the sample completing photoetching is put into electron beam evaporation platform, evaporation layer of metal electrode film layer on a photoresist, soaks being placed in acetone soln in the sample after plated film, and is aided with ultrasonic cleaning, make Graphic transitions on photoresist on metal electrode film, metal electrode film forms gap;
F, nano-pillar suspension-turbid liquid to be dropped on the metal electrode rete of sample, then toast, by the solvent evaporate to dryness of nano-pillar suspension-turbid liquid, make nano-pillar be dispersed in substrate;
G, sample is put into focused ion beam system, select suitable InGaN/GaN Multiple Quantum Well nano-pillar, the position ion beam bombardment secondary deposition metal electrode contacted with metal electrode film at its two ends, wherein suitable InGaN/GaN Multiple Quantum Well nano-pillar refers to: InGaN/GaN Multiple Quantum Well nano-pillar is across groove, the n-type GaN layer at two ends and p-type GaN layer from the distance of the metal electrode film of two different area of isolation within 100nm or directly contact the metal electrode film of two different area of isolation, and the In of centre
xga
1-xn/GaN mqw active layer and metal electrode film are isolated, and isolation refers to In
xga
1-xn/GaN mqw active layer does not touch metal electrode film, the metal electrode of secondary deposition is the metal electrode film in order to connect p-type GaN layer/n-type GaN layer and sample, and its size is with can blanket p-type GaN layer/n-type GaN layer top and can not cross p-type GaN layer/n-type GaN layer and be as the criterion;
H, sample is placed in quick anneal oven, anneals under oxygen atmosphere.
Preferably, described steps A is realized by following steps:
A1, at emission wavelength be 430 ~ 550nm InGaN/GaN Multiple Quantum Well LED substrate on grow a layer insulating, PMMA glue and ultra-violet curing glue are spin-coated on surface of insulating layer successively;
A2, utilize the soft nanometer embossing of ultraviolet, use soft template on ultra-violet curing glue, form the ordered nano post array of gross area;
A3, utilize reactive ion beam etching technique, pass into CHF
3and O
2the remnant layer of mist etching ultra-violet curing glue, then with ultra-violet curing glue for mask, utilize RIE technology, pass into O
2pMMA layer is etched, nano-pillar array structure is transferred to PMMA layer;
A4, employing electron beam evaporation technique, evaporation Ni metallic diaphragm on PMMA layer, is placed in acetone soln subsequently and soaks or ultrasonic stripping, peel off PMMA layer thus obtain large-area ordered metal nano post array by sample;
A5, employing RIE technology, with metal nano post for mask, pass into CHF
3and O
2mist, anisotropic etching insulating barrier, is transferred on insulating barrier by metal nano array structure;
A6, employing ICP technology, with insulating barrier nano-pillar for mask, pass into Cl
2with the mist of Ar, anisotropic etching p-type gallium nitride layer, In
xga
1-xn/GaN mqw active layer, n-type gallium nitride layer, formed and run through p-type gallium nitride layer, In
xga
1-xn/GaN mqw active layer, is deep to the nano column array of n-type gallium nitride layer, sample is placed on inorganic acid, etching injury is removed in aqueous slkali water-bath, then removes remaining insulating barrier;
A7, the sample of acquisition is placed in solution, adopt ultrasonic method by nano-pillar from substrate mechanical stripping, thus dispersion forms nano-pillar suspension-turbid liquid in a solvent.
Preferably, the metal electrode rete in described step e is Ni/Au or Ti/Au bilayer or multilayer film, and in described step G, the metal electrode of secondary deposition is Pt electrode.
Method of the present invention is preparation nano-pillar, be distributed on the metal electrode film of employing ultraviolet photolithographic making, use two-beam focused ion beam system secondary deposition metal electrode, obtain p-type GaN layer/n-type GaN layer through twice metal evaporation to contact with the good ohmic of metal electrode film, thus achieve single InGaN/GaN Multiple Quantum Well nano-pillar device.Being used alone focused ion beam technology in the past makes in electrode process, because considering that subsequent current injects convenient test, generally all adopt Pt electrode bombardment time long, depositional area is larger, the scheme that thickness is thicker, can bring like this near every root Pt line and have very large contaminated area, easily cause electric pole short circuit and high energy Ga example to inject and the Multiple Quantum Well that causes is had chance with the problem of district's defect; For using secondary deposition metal mode in the present invention, can contaminated area be reduced while realizing good ohmic contact, weakening the impact of Ga ion pair nano material, and greatly can save processing cost, being made into power high, work simplification.This method also can carry out design electrode pattern according to the difformity of nano-pillar itself and size, is a kind of method realizing the single InGaN/GaN Multiple Quantum Well nano-pillar device relatively simple, reliability is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of the InGaN/GaN Multiple Quantum Well LED substrate obtained in steps A 1 of the present invention.
Fig. 2 is the structural representation of the InGaN/GaN Multiple Quantum Well LED deposition on substrate insulating barrier obtained in steps A 1 of the present invention.
Fig. 3 is the structural representation of spin coating PMMA glue and ultra-violet curing glue on the InGaN/GaN Multiple Quantum Well LED that obtains in steps A 1 of the present invention.
Fig. 4 is the structural representation of ordered nano post array on the ultra-violet curing glue-line that obtains in steps A 2 of the present invention.
Fig. 5 is the structural representation of ordered nano post array on the PMMA layer that obtains in steps A 3 of the present invention.
Fig. 6 is the structural representation of ordered nano post array on the metal film that obtains in steps A 4 of the present invention.
Fig. 7 is the structural representation of ordered nano post array on the silica dioxide medium thin layer that obtains in steps A 5 of the present invention.
Fig. 8 is the structural representation of the InGaN/GaN Multiple Quantum Well nano column array obtained in steps A 6 of the present invention.
Fig. 9 is the structural representation of the device substrate obtained in step B of the present invention.
Figure 10 is the structural representation of the device obtained in step C of the present invention, and wherein deposition on substrate has device isolation layer.
Figure 11 is the structural representation of the device obtained in step e of the present invention, and wherein on device isolation layer, evaporation has metal electrode rete.
Figure 12 is the structural representation of InGaN/GaN Multiple Quantum Well list nano-pillar LED component of the present invention, and wherein nano-pillar is positioned on metal electrode rete, does not carry out the secondary deposition of Pt electrode.
Figure 13 is the structural representation of InGaN/GaN Multiple Quantum Well list nano-pillar LED component of the present invention, and wherein nano-pillar is positioned on metal electrode rete, and carries out the secondary deposition of Pt electrode.
Figure 14 is the scanning electron microscopy picture of the InGaN/GaN Multiple Quantum Well list nano-pillar LED component of Figure 12.
Figure 15 is the scanning electron microscopy picture of the InGaN/GaN Multiple Quantum Well list nano-pillar LED component of Figure 13.
Figure 16 is the I-V characteristic curve of InGaN/GaN Multiple Quantum Well list nano-pillar LED component in embodiment 1.
Figure 17 is the electroluminescence spectrum of InGaN/GaN Multiple Quantum Well list nano-pillar LED component in embodiment 1.
Wherein 1 represent n-type GaN layer, 2 represent mqw active layer, 3 represent p-type GaN layer, and 4 represent insulating barrier, and 5 represent PMMA glue-line, 6 represent ultra-violet curing glue-line, 7 represent metallic diaphragm, and 8 represent device substrate, and 9 represent device isolation layer, 10 represent metal electrode rete, and 11 represent secondary deposition metal electrode.
Embodiment
Embodiment 1
This InGaN/GaN Multiple Quantum Well list nano-pillar LED component, its step comprises:
A1, be 0.3 in In component, emission wavelength is 510nm, the periodicity of quantum well be 10 InGaN/GaN Multiple Quantum Well LED substrate on grow the thick SiO of one deck 300nm
2insulating barrier, is spin-coated on SiO successively by PMMA glue thick for 200nm and the thick ultra-violet curing glue of 30nm
2surface of insulating layer; The thickness of the P type GaN layer of InGaN/GaN Multiple Quantum Well LED substrate is the thickness of 500nm, InGaN well layer is for the thickness of 3nm, GaN barrier layer is 12nm, the thickness 2um of n-type GaN layer;
A2, utilize the soft nanometer embossing of ultraviolet, to prepare in advance and did soft template and the device ultra-violet curing film surface close contact of release treatment, under uviol lamp, fully exposure makes ultra-violet curing adhesive curing, the demoulding subsequently, soft template is separated with device surface, the ultra-violet curing glue-line of device surface forms orderly nano column array;
A3, utilize reactive ion beam etching technique, pass into CHF
3and O
2the remnant layer of mist etching ultra-violet curing glue, then with ultra-violet curing glue for mask, utilize RIE technology, pass into O
2pMMA layer is etched, nano-pillar array structure is transferred to PMMA layer;
A4, employing electron beam evaporation technique, the Ni metallic diaphragm that evaporation 30nm is thick on PMMA layer, is placed in acetone soln subsequently and soaks or ultrasonic stripping, peel off PMMA layer thus obtain large-area ordered metal nano post array by sample;
A5, employing RIE technology, with metal nano post for mask, pass into CHF
3and O
2mist, anisotropic etching SiO
2insulating barrier, is transferred to metal nano array structure on SiO2 insulating barrier, etching parameters: CHF
3and O
2flow is respectively 35sccm and 5sccm, power: 100W, pressure: 3Pa, etch period: 10min;
A6, employing ICP technology, with SiO
2insulating barrier nano-pillar is mask, passes into Cl
2with the mist of Ar, anisotropic etching p-type gallium nitride layer, In
0.3ga
0.7n/GaN mqw active layer, n-type gallium nitride layer, formed and run through p-type gallium nitride layer, In
0.3ga
0.7n/GaN mqw active layer, is deep to the nano column array of n-type gallium nitride layer, sample is placed on inorganic acid, inorganic alkali solution 40 C water bath heats and remove etching injury in 5 minutes, then use hydrofluoric acid to remove remaining insulating barrier, etching parameters: Cl
218sccm and 10sccm is respectively, cavity air pressure: 10mTorr, DC bias voltage: 300V, RF power 50W, ICP power: 200W, frequency 13.56MHz, etch period: 7Wmin, the nano-pillar height etched 2 μm with Ar flow;
A7, the sample of acquisition is placed in alcohol, adopts ultrasonic method by nano-pillar from substrate mechanical stripping, thus be dispersed in alcohol and form nano-pillar suspension-turbid liquid;
B, choose there is excellent surface evenness silicon chip as device substrate, cleaning substrate: adopt acetone, alcohol, deionized water ultrasonic cleaning successively, each 3 ~ 5 minutes of each step;
C, over a device substrate employing plasma reinforced chemical vapour deposition method deposit one deck silicon carbide layer;
Photoresist on D, on the silicon carbide layer spin coating, photoresist can select AZ5214 or AZ5100, and uv-exposure produces figure;
E, the sample completing photoetching is put into electron beam evaporation platform, evaporation layer of metal electrode film layer on a photoresist, metal electrode rete selects Ni/Au duplicature, soak being placed in acetone soln in the sample after plated film, and be aided with ultrasonic cleaning, make Graphic transitions on photoresist on metal film, metal film forms gap;
F, nano-pillar suspension-turbid liquid to be dropped on the metal electrode rete of sample, then toast, by the solvent evaporate to dryness of nano-pillar suspension-turbid liquid, make nano-pillar be dispersed in substrate;
G, sample is put into focused ion beam system, select suitable InGaN/GaN Multiple Quantum Well nano-pillar, the position ion beam bombardment secondary deposition Pt electrode contacted with metal electrode film at its two ends, wherein suitable InGaN/GaN Multiple Quantum Well nano-pillar refers to: InGaN/GaN Multiple Quantum Well nano-pillar is transferred to the metal electrode rete with groove figure and across groove, the n-type GaN layer at two ends and p-type GaN layer from the distance of the metal electrode film of two different area of isolation within 100nm or directly contact the metal electrode film of two different area of isolation, and the In of centre
xga
1-xn/GaN mqw active layer and metal electrode film are isolated, the Pt electrode of secondary deposition is the metal electrode film in order to connect p-type GaN layer/n-type GaN layer and sample, its size is with can blanket p-type GaN layer/n-type GaN layer top and can not cross p-type GaN layer/n-type GaN layer and be as the criterion, plated metal Pt is generated by the hydrocarbon compound gas effect of high energy Ga ion and Pt, Pt metal dimension is 500nm × 500nm, height of deposition is about 400nm, ion beam current adopts 0.17nA, high pressure is 5kV, and sedimentation time is about 70 seconds;
H, sample is placed in quick anneal oven, anneal under oxygen atmosphere, annealing time 30 seconds, annealing temperature is about 300 DEG C.
InGaN/GaN Multiple Quantum Well list nano-pillar its I-V characteristic curve of LED component obtained and electroluminescence spectrum are as shown in Figure 16 and Figure 17.
Embodiment 2
This InGaN/GaN Multiple Quantum Well list nano-pillar LED component, obtained by the method for embodiment 1, difference is: device substrate is quartz, and device isolation layer is SiO
2layer, thickness is the periodicity of 50nm, InGaN/GaN mqw active layer is 15, In component is 0.35, emission wavelength is 550nm, and the thickness of p-type GaN layer is 300nm, and the thickness of n-type GaN layer is 1.5 μm, the diameter of obtained nano-pillar is 500nm, length is 3.5 μm, and metal electrode rete is Ni/Au/Ti/Au tetra-layers of metal film that electron evaporation deposition obtains, and thickness is 500nm, Pt electrode is of a size of 400nm × 400nm, and height of deposition is 500nm.
Embodiment 3
This InGaN/GaN Multiple Quantum Well list nano-pillar LED component, obtained by the method for embodiment 1, difference is: device substrate is PDMS, and device isolation layer is SiO
2layer, thickness is the periodicity of 200nm, InGaN/GaN mqw active layer is 12, In component is 0.12, emission wavelength is 430nm, and the thickness of p-type GaN layer is 400nm, and the thickness of n-type GaN layer is 3 μm, the diameter of obtained nano-pillar is 70nm, length is 0.8 μm, and metal electrode rete is the Ti/Au double-level-metal film that electron evaporation deposition obtains, and thickness is 200nm, Pt electrode is of a size of 200nm × 200nm, and height of deposition is 200nm.
Claims (10)
1. an InGaN/GaN Multiple Quantum Well list nano-pillar LED component, comprises
Device substrate;
Deposition device isolation layer over a device substrate;
Be deposited on the metal electrode rete on device isolation layer;
It is characterized in that: described metal electrode film surface makes the region that metal electrode film is divided into multiple mutual isolation by one or more groove in length and breadth by lithography, also comprise at least one InGaN/GaN Multiple Quantum Well nano-pillar, described InGaN/GaN Multiple Quantum Well nano-pillar at least comprises the n-type GaN layer grown successively on a sapphire substrate, In
xga
1-xn/GaN mqw active layer and p-type GaN layer, the width of described groove is less than the length of whole InGaN/GaN Multiple Quantum Well nano-pillar, described InGaN/GaN Multiple Quantum Well nano-pillar is across groove, the distance of the metal electrode film of the n-type GaN layer at two ends and p-type GaN layer distance two different area of isolation is within 100nm or directly contact the metal electrode film of two different area of isolation, and the In of centre
xga
1-xn/GaN mqw active layer and metal electrode film are isolated, and the position contacted with metal electrode film at InGaN/GaN Multiple Quantum Well nano-pillar two ends forms ohmic contact by focused ion beam system secondary deposition metal electrode.
2. InGaN/GaN Multiple Quantum Well list nano-pillar LED component according to claim 1, is characterized in that: described In
xga
1-xthe periodicity of N/GaN mqw active layer is 10 ~ 15, described x scope: 0.12≤x≤0.35, emission wavelength at 430 ~ 550nm, the thickness 300 ~ 500nm of p-type GaN layer, the thickness of n-type GaN layer 1.5 ~ 3 μm.
3. InGaN/GaN Multiple Quantum Well list nano-pillar LED component according to claim 1, is characterized in that: the diameter of described InGaN/GaN Multiple Quantum Well nano-pillar is 70 ~ 500nm, and length is 0.8 ~ 3.5 μm.
4. InGaN/GaN Multiple Quantum Well list nano-pillar LED component according to claim 1, is characterized in that: described device substrate is the material with excellent surface evenness, comprises hard material and flexible material.
5. InGaN/GaN Multiple Quantum Well list nano-pillar LED component according to claim 1, is characterized in that: described device isolation layer is SiO
2layer or Si
3c
4layer, thickness is 50 ~ 1000nm.
6. InGaN/GaN Multiple Quantum Well list nano-pillar LED component according to claim 1, is characterized in that: described metal electrode rete is Ni/Au or Ti/Au bilayer or the metal multilayer film of the acquisition of electron evaporation deposition, and thickness is 10 ~ 500nm.
7. InGaN/GaN Multiple Quantum Well list nano-pillar LED component according to claim 1, it is characterized in that: the metal electrode of described secondary deposition is Pt electrode, is of a size of 200-500nm × 200-500nm, height of deposition is 200-500nm.
8. a preparation method for InGaN/GaN Multiple Quantum Well list nano-pillar LED component, its step comprises:
A, preparation InGaN/GaN Multiple Quantum Well nano-pillar, and dispersion obtains nano-pillar suspension-turbid liquid in a solvent, obtained InGaN/GaN Multiple Quantum Well nano-pillar at least comprises the n-type GaN layer grown successively on a sapphire substrate, In
xga
1-xn/GaN mqw active layer and p-type GaN layer;
B, choose the device substrate with excellent surface evenness, cleaning device substrate: adopt acetone, alcohol, deionized water ultrasonic cleaning successively, each 3 ~ 5 minutes of each step;
C, over a device substrate employing plasma reinforced chemical vapour deposition method deposit a layer dielectric insulating barrier;
D, on device isolation layer photoresist in spin coating, uv-exposure produces figure;
E, the sample completing photoetching is put into electron beam evaporation platform, evaporation layer of metal electrode film layer on a photoresist, soaks being placed in acetone soln in the sample after plated film, and is aided with ultrasonic cleaning, make Graphic transitions on photoresist on metal electrode film, metal electrode film forms groove;
F, nano-pillar suspension-turbid liquid to be dropped on the metal electrode rete of sample, then toast, by the solvent evaporate to dryness of nano-pillar suspension-turbid liquid, make nano-pillar be dispersed in substrate;
G, sample is put into focused ion beam system, select suitable InGaN/GaN Multiple Quantum Well nano-pillar, the position ion beam bombardment secondary deposition metal electrode contacted with metal electrode film at its two ends, wherein suitable InGaN/GaN Multiple Quantum Well nano-pillar refers to: InGaN/GaN Multiple Quantum Well nano-pillar is across groove, the n-type GaN layer at two ends and p-type GaN layer are from the distance of metal electrode film within 100nm or directly contacting metal electrode film, and the In of centre
xga
1-xn/GaN mqw active layer and metal electrode film are isolated, the metal electrode of secondary deposition is the metal electrode film in order to connect p-type GaN layer/n-type GaN layer and sample, and its size is with can blanket p-type GaN layer/n-type GaN layer top and do not cross p-type GaN layer/n-type GaN layer and be as the criterion;
H, sample is placed in quick anneal oven, anneals under oxygen atmosphere.
9. the preparation method of InGaN/GaN Multiple Quantum Well list nano-pillar LED component according to claim 8, is characterized in that: described steps A is realized by following steps:
A1, at emission wavelength be 430 ~ 550nm InGaN/GaN Multiple Quantum Well LED substrate on grow a layer insulating, PMMA glue and ultra-violet curing glue are spin-coated on surface of insulating layer successively;
A2, utilize the soft nanometer embossing of ultraviolet, use soft template on ultra-violet curing glue, form the ordered nano post array of gross area;
A3, utilize reactive ion beam etching technique, pass into CHF
3and O
2the remnant layer of mist etching ultra-violet curing glue, then with ultra-violet curing glue for mask, utilize RIE technology, pass into O
2pMMA layer is etched, nano-pillar array structure is transferred to PMMA layer;
A4, employing electron beam evaporation technique, evaporation Ni metallic diaphragm on PMMA layer, is placed in acetone soln subsequently and soaks or ultrasonic stripping, peel off PMMA layer thus obtain large-area ordered metal nano post array by sample;
A5, employing RIE technology, with metal nano post for mask, pass into CHF
3and O
2mist, anisotropic etching insulating barrier, is transferred on insulating barrier by metal nano array structure;
A6, employing ICP technology, with insulating barrier nano-pillar for mask, pass into Cl
2with the mist of Ar, anisotropic etching p-type gallium nitride layer, In
xga
1-xn/GaN mqw active layer, n-type gallium nitride layer, formed and run through p-type gallium nitride layer, In
xga
1-xn/GaN mqw active layer, is deep to the nano column array of n-type gallium nitride layer, sample is placed on inorganic acid, etching injury is removed in aqueous slkali water-bath, then removes remaining insulating barrier;
A7, the sample of acquisition is placed in solution, adopt ultrasonic method by nano-pillar from substrate mechanical stripping, thus dispersion forms nano-pillar suspension-turbid liquid in a solvent.
10. the preparation method of InGaN/GaN Multiple Quantum Well list nano-pillar LED component according to claim 8, it is characterized in that: the metal electrode rete in described step e is Ni/Au or Ti/Au bilayer or multilayer film, and in described step G, the metal electrode of secondary deposition is Pt electrode.
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