CN106300016A - GaSb base single tube two-region structure short-pulse laser and preparation method thereof - Google Patents
GaSb base single tube two-region structure short-pulse laser and preparation method thereof Download PDFInfo
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- CN106300016A CN106300016A CN201610939768.4A CN201610939768A CN106300016A CN 106300016 A CN106300016 A CN 106300016A CN 201610939768 A CN201610939768 A CN 201610939768A CN 106300016 A CN106300016 A CN 106300016A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
Abstract
The present invention provides a kind of GaSb base single tube two-region structure short-pulse laser to include N-type GaSb substrate, and be sequentially deposited on N-type GaSb substrate N-type GaSb cushion, N-type AlGaAsSb lower limit layer, AlGaAsSb lower waveguide layer, active area, the upper ducting layer of AlGaAsSb, p-type AlGaAsSb upper limiting layer, cushion in p-type GaSb.Above narrow ridged waveguide structure, etch two electric currents inject window, forward current and reverse biased is injected respectively to gain region and uptake zone, twoth district are integrated forms monolithic two-region structure on the same chip, make epitaxial structure can a secondary growth, eliminate the step that non-linear saturable absorber is manufactured separately.Thus decrease light loss problem in traditional Z type and X-type optical pumping light path, it is possible to obtain bigger output.The present invention also provides for a kind of GaSb base single tube two-region structure short-pulse laser preparation method.
Description
Technical field
The present invention relates to short-pulse laser, be GaSb base single tube two-region structure short-pulse laser and system in particular
Preparation Method.
Background technology
Short-pulse laser has the features such as narrow spaces, high-peak power, wide spectral range so that it is become physics, chemistry,
The subjects such as biology, laser spectroscopy, and optoelectronics carry out exploratory development and disclose brand-new ultrafast mistake microcosmos
The important optical signal of journey and be widely used in the fields such as communication, national defence, medical treatment.
Short optical pulse source all solid state laser mainly with the ti sapphire laser of locked mode as representative is widely used at present,
But the volume of this kind of mode-locked laser is necessarily large and bulky, expensive, and controlling pulse recurrence frequency and electronic synchronizer etc.
The operation of pulse characteristic aspect is more complicated.But, semiconductor laser is because of its compact conformation, low cost, efficient, electricity controllability
The advantages such as good and wavelength tuning is flexible and become the ideal chose in ultra-short pulse laser source.It addition, traditional Si base, GaAs base material
Material strip gap is relatively wide, it is impossible to meet the requirement to wavelength, and the band gap of GaSb material relative narrower has inborn advantage.
Summary of the invention
In order to overcome drawbacks described above, it is an object of the invention to provide a kind of low optical path loss, it is possible to obtain more powerful, work
Skill is simpler, and cost is lower, and reliability and yield rate are high, the novel GaSb base single tube two-region structure short pulse impulse that wavelength is more stable
Light device.
To achieve these goals, according to the first aspect of the invention, it is provided that a kind of GaSb base single tube two-region structure is short
Pulse laser includes: substrate, epitaxial structure, ridged waveguide structure and two-region structure；
Described epitaxial structure, is positioned on described substrate, includes successively: N-type GaSb bottom breaker, N-type AlGaAsSb lower limit
Preparative layer, undoped AlGaAsSb lower waveguide layer, undoped AlGaAsSb lower barrierlayer, undoped SQW, undoped
Cushion in ducting layer, p-type AlGaAsSb upper limiting layer and p-type GaSb in the upper barrier layer of AlGaAsSb, undoped AlGaAsSb；
Described ridged waveguide structure, is etched downwards by cushion in described p-type GaSb and to be formed；
Described two-region structure, is positioned on described ridged waveguide structure, is formed by etching on described ridged waveguide structure
Gain region window and uptake zone window；
The material of described substrate is N-type gallium antimony；
Described N-type AlGaAsSb lower limit layer is the aluminum gallium arsenide antimony material of n-type doping, and component ratio is AlxGa1-xAsSb,
X scope is 0 to 1；
Described undoped AlGaAsSb lower waveguide layer is undoped aluminum gallium arsenide antimony material, and component ratio is AlyGa1-yAsSb,
V scope is 0 to 1；
Described undoped Quantum well active district is aluminum gallium arsenide antimony material and the indium gallium arsenic antimony material of undoped；
In described undoped AlGaAsSb, ducting layer is the aluminum gallium arsenide antimony material of p-type doping, and component ratio is AlzGa1- zAsSb, z range is 0 to 1；
Described p-type AlGaAsSb upper limiting layer is the aluminum gallium arsenide antimony material of p-type doping, and its component ratio is AluGa1- uAsSb, u scope is 0 to 1；
In described p-type GaSb, cushion is the gallium antimony material of p-type doping；
Described two-region structure is arranged on described ridged waveguide structure, forms gain region window and uptake zone window, gain
District's length of window is more than uptake zone window；
Described gain region window injects forward current, and described uptake zone window injects reverse biased.
According to a further aspect in the invention, one is additionally provided for preparing GaSb base monotube gathering double zoning as above
The method of the short impulse semiconductor laser of structure, comprises the steps:
S1: take N-type GaSb substrate described in；
S2: set gradually on described N-type GaSb substrate N-type GaSb bottom breaker, N-type AlGaAsSb lower limit layer,
In undoped AlGaAsSb lower waveguide layer, undoped AlGaAsSb lower barrierlayer, undoped quantum well layer, undoped AlGaAsSb
In barrier layer, undoped AlGaAsSb, in ducting layer, p-type AlGaAsSb upper limiting layer and p-type GaSb, cushion forms epitaxy junction
Structure；
S3: buffer-layer surface photoetching the first etching mask figure in described p-type GaSb；
S4: etch downwards at described first mask graph, the degree of depth arrives ducting layer in undoped AlGaAsSb, forms ridged
Waveguiding structure；
S5: photoetching etch the second mask graph on described ridged waveguide structure, forms electric isolution ditch；
S6: grow SiO on described second mask graph2Dielectric insulating film；
S7: at described SiO2Dielectric insulating film photoetching also etches the 3rd mask graph, forms gain region window and uptake zone
Window；
S8: prepare p side electrode on described 3rd mask graph surface；
S9: photoetching etch the 4th mask graph on described p side electrode, forms cleavage groove；
S10: prepare N face electrode in described substrate N face；
S11: the above is carried out Alloying Treatment, finally pressure welding lead-in wire on tube core, burn-on copper wire at potsherd, device
Part makes complete.
Beneficial effects of the present invention: employing photoetching technique, ICP lithographic technique, HF on the ridged waveguide structure etched:
NH4∶H2The technical schemes such as O (3: 6: 9) corrosive liquid corrosion arrange two electric currents and inject window, gain region window and uptake zone window
It is positioned at same tube core structure, decreases loaded down with trivial details processing step, inject forward piezoelectric voltage in described gain window, in described suction
Receive district's window and inject negative bias voltage.Owing to gain device and the integrated two-region that formed on the same chip of saturable absorber are tied
Structure so that epitaxial structure is sequentially depositing, had both eliminated the step that non-linear saturable absorber is manufactured separately, turn avoid tradition
Z-type X-type light path is individually added into the light path adjustment challenge that non-linear saturable absorber brings.
The invention allows for preparing different cavity length and the device of different windows ratio in a collection of device, technique is more
Simply, cost is lower, and reliability and yield rate are high.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the structure top view of the present invention；
Fig. 3 is the flow chart of preparation method of the present invention；
Detailed description of the invention
For making purpose of the present invention technical scheme and advantage clearer, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
It should be noted that the implementation not illustrating in accompanying drawing or describing, for ordinary skill people in art
Form known to Yuan.Although it addition, the demonstration of the parameter comprising particular value can be provided herein, it is to be understood that parameter is without definitely
Equal to corresponding value, but can be similar to be worth accordingly in acceptable error margin or design constraint.Implement additionally, following
The direction term mentioned in example, is only the direction with reference to accompanying drawing.Therefore, the direction term of use is used to illustrate not for limiting
The present invention processed.
The invention provides a kind of GaSb base single tube two-region structure short-pulse laser and preparation method thereof, pass through normal light
Carve and ICP etching is with the use of making laser instrument can be made by the structural material that is sequentially depositing, it is to avoid adjust light path
Challenge, the structure fabrication simultaneously also making laser instrument is simpler.
Fig. 1 is that the various piece to the present embodiment GaSb base single tube two-region structure short-pulse laser is carried out specifically
Bright.
Substrate 1 is (100) face N-type gallium antimony material.
Epitaxial structure includes: be sequentially prepared N-type GaSb bottom breaker 2, N-type AlGaAsSb lower limit on N-type GaSb substrate 1
Preparative layer 3, undoped AlGaAsSb lower waveguide layer 4, undoped AlGaAsSb lower barrierlayer 5, undoped quantum well layer 6, undoped
Buffer in ducting layer 8, p-type AlGaAsSb upper limiting layer 9 and p-type GaSb in the upper barrier layer of AlGaAsSb 7, undoped AlGaAsSb
Layer 10；Wherein quantum well layer active area can include 1-3 SQW.
Ridged waveguide structure, is positioned at cushion in described p-type GaSb and etches downwards formation；
Two-region structure, is positioned on described ridged waveguide structure, forms gain by etching on described ridged waveguide structure
District's window and uptake zone window.
In such scheme, lower limit layer 3 is the aluminum gallium arsenide antimony material of n-type doping, and component ratio is Al0.55Ga0.45AsSb,
Thickness is 2 μm；
In such scheme, lower waveguide layer 4 is undoped aluminum gallium arsenide antimony material, and component ratio is Al0.35Ga0.65AsSb, thickness
For 270nm；
In such scheme, SQW 6 is aluminum gallium arsenide antimony material and the indium gallium arsenic antimony material of undoped, and thickness is 10nm；
In such scheme, the aluminum gallium arsenide antimony material that upper ducting layer 8 adulterates for p-type, component ratio is Al0.35Ga0.65AsSb,
Thickness is 270nm；
In such scheme, the aluminum gallium arsenide antimony material that upper limiting layer 9 adulterates for p-type, its component ratio is
Al0.55Ga0.45AsSb, thickness is 2 μm；
In such scheme, the gallium antimony material that upper cushion 10 adulterates for p-type, thickness is 130nm；
In such scheme, the width of ridged waveguide structure is 4500nm, a length of 600 μm-2mm；
In such scheme, two window widths that two-region structure is arranged are 2 μm, a length of 500 μm-1800 of gain region window
μm, uptake zone window length 15 μm-60 μm, the window degree of depth is evaporation SiO2Thickness；
In such scheme, N-type AlGaAsSb lower limit layer 3 and the easy shape in AlGaAsSb lower waveguide layer 4 interface of undoped
Become high-quality hetero-junctions, reduce interface number, reduce the intensification that interfacial state compound thermal effect causes, thus improve laser instrument
Reliability.Upper ducting layer and upper limiting layer are that aluminum gallium arsenide antimony material is readily obtained high-quality epitaxial material, thus improve laser
The epitaxial wafer yield rate of device；
In such scheme, in undoped AlGaAsSb, ducting layer 8 can form good Ohmic contact with TiPtAu, reduces
The internal resistance of laser instrument.
Refer to accompanying drawing 1, in the present embodiment, the top section of p-type AlGaAsSb upper limiting layer 9 is etched and forms ridged ripple
Lead, but the present invention is not limited thereto.Those skilled in the art should clear enough, the degree of depth of this etching can be p-type
Below AlGaAsSb upper limiting layer 9 upper surface, and more than ducting layer 8 lower surface arbitrarily deep on the AlGaAsSb of undoped
Degree.Generally, the degree of depth of this ridge waveguide is between 0.5 μm-2 μm, and total width is between 4-5 μm.
As shown in Figure 2 be the structure top view of GaSb base single tube two-region structure short-pulse laser.Gain region window and
Uptake zone window is positioned on ridge waveguide, and twoth district optically connect and are being electrically isolating.Gain region window is at forward current
Work under conditions of injection, provide gain for light pulse, and play pulse stretching effect；Uptake zone window is at the bar of reverse biased
Work under part, provide saturable absorption for light pulse, and play pulse compression effect.
In another embodiment of the present invention, the preparation method of a kind of above-mentioned laser instrument is additionally provided, as shown in Figure 3
Flow chart, the method comprises the steps:
S1: take N-type GaSb substrate described in；
S2: on described N-type GaSb substrate, set gradually N-type GaSb bottom breaker, N-type AlGaAsSb lower limit layer,
In undoped AlGaAsSb lower waveguide layer, undoped AlGaAsSb lower barrierlayer, undoped quantum well layer, undoped AlGaAsSb
In barrier layer, undoped AlGaAsSb, in ducting layer, p-type AlGaAsSb upper limiting layer and p-type GaSb, cushion forms epitaxy junction
Structure；
S3: use photoetching technique (or electron beam lithography EBL), buffer-layer surface photoetching the in described p-type GaSb
One mask graph；
S4: using ICP lithographic technique to etch downwards at described first mask graph, the degree of depth arrives in undoped AlGaAsSb
Ducting layer, forms ridged waveguide structure；
S5: photoetching etch the second mask graph on described ridged waveguide structure, forms electric isolution ditch；
S6: use PEVCD (or electron beam evaporation deposition machine, magnetron sputtering) at described second mask graph, be deposited with SiO2
Dielectric insulating film；
S7: photoetching the 3rd mask graph, and corrode the SiO that photoetching is come out2Dielectric insulating film forms gain region window
Mouth and uptake zone window.Inject forward current to gain region, provide gain for light pulse and play pulse stretching effect；To absorption
Reverse biased is injected in district, provides saturable absorption for light pulse and plays pulse compression effect；
S8: the p side electrode of Ti/Au system prepared by deposited by electron beam evaporation coater；
S9: again by photoetching process or electron beam exposure, the second mask layer (cleavage groove figure) is transferred on Au layer
Photoresist on, the Au of isolating trenches that corrosion comes out forms electric isolution groove；
S10: substrate thinning polishes, preparation N face electrode；
S11: use rapid thermal anneal er to carry out Alloying Treatment, finally use ultrasonic gold wire bonder to press on tube core
Solder taul, burn-ons copper wire at potsherd, and device manufactures complete.
Above step have employed photoetching technique will carry out spin coating, front baking, to version, expose, develop and model, finally go
Except photoresist, and epitaxial wafer is processed.Concrete processing method be first to use acetone cotton balls toward outside a direction wiping gently
Prolonging sheet surface, then will be sequentially placed in trichloro ethylene, acetone and ethanol water bath and respectively boil three times, and dry up with nitrogen chamber, hot plate dries
Roasting, to remove steam.
So far, the present embodiment GaSb base single tube two-region structure short-pulse laser and preparation method thereof is introduced complete.Foundation
This describes, and the present invention should have been had and clear recognizes accurately by those skilled in the art.
Additionally, the above-mentioned definition to each element and method be not limited in the various concrete structures mentioned in embodiment or
Person's shape, those of ordinary skill in the art can to its carry out simply known to replacement, such as:
(1) inductively coupled plasma (ICP) can also substitute by reactive ion etching (RIE) method；
(2) plasma activated chemical vapour deposition (PECVD) can replace with CVD.
In sum, the invention provides a kind of GaSb base single tube two-region structure short-pulse laser and preparation method thereof.
The present invention proposes monolithic two-region structure, breaches the optical pumping light path scheme that tradition GaSb short pulse punching uses, uses to gain
District makes injection forward current, provides gain for light pulse and plays pulse stretching effect；Reverse biased is injected, for light in uptake zone
Pulse provides saturable absorption, and plays pulse compression effect.Thus decrease the optical pumping light used by tradition GaSb short pulse punching
Light loss problem in road, it is possible to obtain bigger output.
Above-described two specific embodiments, have carried out entering one to the purpose of the present invention, technical scheme and beneficial effect
Step describes in detail, be it should be understood that the specific embodiment that the foregoing is only the present invention, is not limited to this
Bright, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included in the present invention
Protection domain within.
Claims (11)
1. a GaSb base single tube two-region structure short-pulse laser, comprising: substrate, epitaxial structure, ridged waveguide structure and
Two-region structure；
Described epitaxial structure is positioned on described substrate, includes the most successively: under N-type GaSb bottom breaker, N-type AlGaAsSb
Limiting layer, undoped AlGaAsSb lower waveguide layer, undoped AlGaAsSb lower barrierlayer, undoped Quantum well active district, non-mix
Buffer in ducting layer, p-type AlGaAsSb upper limiting layer and p-type GaSb in barrier layer, undoped AlGaAsSb on miscellaneous AlGaAsSb
Layer；
Described ridged waveguide structure, is etched downwards by cushion in described p-type GaSb and to be formed；
Described two-region structure is positioned on described ridged waveguide structure, forms gain region by etching on described ridged waveguide structure
Window and uptake zone window.
A kind of GaSb base single tube two-region the most according to claim 1 structure short-pulse laser, it is characterised in that described lining
The material at the end is N-type gallium antimony.
A kind of GaSb base single tube two-region the most according to claim 1 structure short-pulse laser, it is characterised in that described N
Type AlGaAsSb lower limit layer is the aluminum gallium arsenide antimony material of n-type doping, and component ratio is AlxGa1-xAsSb, x scope is 0 to 1.
A kind of GaSb base single tube two-region the most according to claim 1 structure short-pulse laser, it is characterised in that described non-
Doping AlGaAsSb lower waveguide layer is undoped aluminum gallium arsenide antimony material, and component ratio is AlyGa1-yAsSb, y scope is 0 to 1.
A kind of GaSb base single tube two-region the most according to claim 1 structure short-pulse laser, it is characterised in that described non-
Doped quantum well active area is aluminum gallium arsenide antimony material and the indium gallium arsenic antimony material of undoped.
A kind of GaSb base single tube two-region the most according to claim 1 structure short-pulse laser, it is characterised in that described non-
On doping AlGaAsSb, ducting layer is the aluminum gallium arsenide antimony material of p-type doping, and component ratio is AlzGal-zAsSb, z range is 0 to arrive
1。
A kind of GaSb base single tube two-region the most according to claim 1 structure short-pulse laser, it is characterised in that described P
Type AlGaAsSb upper limiting layer is the aluminum gallium arsenide antimony material of p-type doping, and its component ratio is AluGal-uAsSb, u scope is 0 to arrive
1。
A kind of GaSb base single tube two-region the most according to claim 1 structure short-pulse laser, it is characterised in that described P
In type GaSb, cushion is the gallium antimony material of p-type doping.
A kind of GaSb base single tube two-region the most according to claim 1 structure short-pulse laser, it is characterised in that described double
Plot structure is arranged on described ridged waveguide structure, forms gain region window and uptake zone window, and gain region length of window is more than
Uptake zone window.
A kind of GaSb base single tube two-region the most according to claim 9 structure short-pulse laser, it is characterised in that described
Gain region window injects forward current, and described uptake zone window injects reverse biased.
11. 1 kinds for preparing according to the GaSb base single tube two-region structure short pulse impulse described in any one in claim 1-11
The method of light device, comprises the steps:
S1: take N-type GaSb substrate described in；
S2: set gradually N-type GaSb bottom breaker, N-type AlGaAsSb lower limit layer, undoped on described N-type GaSb substrate
Potential barrier in AlGaAsSb lower waveguide layer, undoped AlGaAsSb lower barrierlayer, undoped quantum well layer, undoped AlGaAsSb
In layer, undoped AlGaAsSb, in ducting layer, p-type AlGaAsSb upper limiting layer and p-type GaSb, cushion forms epitaxial structure；
S3: buffer-layer surface photoetching the first etching mask figure in described p-type GaSb；
S4: etch downwards at described first mask graph, the degree of depth arrives ducting layer in undoped AlGaAsSb, forms ridge waveguide
Structure；
S5: photoetching etch the second mask graph on described ridged waveguide structure, forms electric isolution ditch；
S6: grow SiO on described second mask graph2Dielectric insulating film；
S7: at described SiO2Dielectric insulating film photoetching also etches the 3rd mask graph, forms gain region window and uptake zone window；
S8: prepare p side electrode on described 3rd mask graph surface；
S9: photoetching etch the 4th mask graph on described p side electrode, forms cleavage groove；
S10: prepare N face electrode in described substrate N face；
S11: the above step carries out Alloying Treatment, finally pressure welding lead-in wire on tube core, burn-on copper wire at potsherd.
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| CN111200235A (en) * | 2020-01-10 | 2020-05-26 | 松山湖材料实验室 | Preparation method and device of on-chip integrated AlGaN pulse laser |
| CN112086856A (en) * | 2020-10-13 | 2020-12-15 | 江苏华兴激光科技有限公司 | Semiconductor ultrashort pulse laser and preparation method thereof |
| CN115021080A (en) * | 2022-06-21 | 2022-09-06 | 北京大学 | Preparation method of GaN-based laser non-absorption cavity surface structure |
| WO2022193886A1 (en) * | 2021-03-16 | 2022-09-22 | 华为技术有限公司 | Optical modulation and amplification apparatus, optical module, optical network unit and optical communication system |
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Application publication date: 20170104 |