CN107069427B - Preparation method of wide-spectrum thyristor laser - Google Patents
Preparation method of wide-spectrum thyristor laser Download PDFInfo
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- CN107069427B CN107069427B CN201710062988.8A CN201710062988A CN107069427B CN 107069427 B CN107069427 B CN 107069427B CN 201710062988 A CN201710062988 A CN 201710062988A CN 107069427 B CN107069427 B CN 107069427B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
Abstract
The invention discloses a preparation method of a wide-spectrum thyristor laser, and relates to the technical field of semiconductor device preparation. The preparation method disclosed by the invention comprises the following steps: and preparing a semiconductor epitaxial layer structure on the substrate, forming a ridge structure on the semiconductor epitaxial layer structure, and preparing an electrode on the ridge structure to obtain the broad spectrum thyristor laser. The preparation of the PNPiN structure wide-spectrum thyristor laser with high output power, high stability and controllability is completed by introducing the upper N-type region by combining the PiN structure of the traditional laser and the PNPN structure of the traditional thyristor. The preparation process is simple and controllable, the cost is low, and the batch production is easy to realize.
Description
Technical Field
The invention relates to the technical field of semiconductor device preparation, in particular to a preparation method of a wide-spectrum thyristor laser.
Background
The wide-spectrum light source has the advantages of wide spectrum, high intensity, high spatial coherence and the like, and is widely applied to the fields of frequency clocks, laser radars, optical communication, ultrashort pulse compression, optical coherent imaging, attosecond pulse generation, optical metering and the like. For example: super-luminescent Diode (SLD), Quantum dot/Quantum rod (Quantum dash) laser, Chirp Quantum Well super-luminescent Diode (Chirp Quantum Well SLD) and other wide-spectrum light sources based on semiconductor technology have the advantages of wide spectrum, low cost and small volume, and the problems of overlarge volume and narrow application range of the traditional wide-spectrum laser are solved.
At present, the problems of too low power, small application range, poor stability and controllability and the like of a semiconductor wide-spectrum light source still exist, and the practical application of the photoelectronic devices is greatly influenced. The thyristor is a semiconductor triode device developed on the basis of the transistor, has the characteristics of high power, unidirectional conduction and controllable conduction time grid, and is mainly used for the aspects of rectification, inversion, voltage regulation, switching and the like in the field of power electronics.
Therefore, the wide-spectrum thyristor laser combines the thyristor structure with the semiconductor wide-spectrum laser, combines the Pin structure of the traditional laser and the PNPN structure of the traditional thyristor, prepares the GaAs-based novel PNPin structure thyristor laser, well combines the advantages of the thyristor device and the wide-spectrum light source by introducing the gate electrode control into the laser, and improves the overall performance of the laser.
Disclosure of Invention
Technical problem to be solved
Aiming at a novel GaAs-based wide-spectrum thyristor laser with a gate electrode, the wide-spectrum thyristor laser has high output power, good stability and controllability, and can be used for outputting wide-spectrum laser pulses, simplifying the manufacturing process, reducing the cost and realizing batch production.
(II) technical scheme
Aiming at the problems, the invention provides a preparation method of a wide-spectrum thyristor laser, which comprises the following steps:
s1, preparing a semiconductor epitaxial layer structure,
s2, forming a ridge structure on the semiconductor epitaxial layer structure, wherein the ridge structure comprises a ridge, a first table board and a second table board, the first table board and the second table board are formed on two sides of the ridge, and the depth of the ridge is equal to the sum of the thicknesses of the i-GaAs spacing layers of the upper P-type region, the upper N-type region and the lower P-type region;
and S3, preparing electrodes on the ridge structure to obtain the wide-spectrum thyristor laser.
In step S1, the semiconductor epitaxial layer structure is prepared from bottom to top in sequence: lower N type district, i type district, lower P type district, go up N type district and go up P type district, lower N type district includes from bottom to top in proper order: an n-type GaAs substrate, an n-GaAs buffer layer and an n-AlGaAs cover layer; the i-type zone sequentially comprises from bottom to top: the lower limiting layer of i-AlGaAs, the lower waveguide layer of i-GaAs, the upper limiting layer of i-AlGaAs; the lower P-type zone sequentially comprises from bottom to top: a p-type gate electrode contact layer, an i-GaAs spacing layer; go up P type district from bottom to top and include in proper order: p-AlGaAs cap layer, p-GaAs contact layer, upper N-type region including: and an N-AlGaAs graded transition layer, wherein an upper N-type region is positioned between an upper P-type region and a lower P-type region to form a PNPiN basic structure.
And forming a quantum well active region between the i-GaAs upper waveguide layer and the i-GaAs lower waveguide layer in the i-type region for generating laser.
Forming a GaAs tunnel junction between the upper N-type region and the lower P-type region, wherein the GaAs tunnel junction comprises a heavily doped P-type layer and a heavily doped N-type layer formed on the heavily doped P-type layer, and the heavily doped P-type layer is formed on the i-GaAs spacing layer and belongs to the lower P-type region; the heavily doped N-type layer is positioned below the N-AlGaAs gradual transition layer and belongs to an upper N-type region.
In step S2, the surface of the upper P-type region of the semiconductor epitaxial layer structure is etched to form a ridge stripe structure, where the ridge stripe structure includes a ridge stripe and a first mesa and a second mesa formed on both sides of the ridge stripe, and the ridge stripe depth is equal to the sum of the thicknesses of the i-GaAs spacer layers of the upper P-type region, the upper N-type region, and the lower P-type region.
And etching the first mesa and the second mesa at two sides of the ridge to form a first groove and a second groove, wherein the bottoms of the first groove and the second groove are positioned in the i-AlGaAs upper limiting layer of the i-type region.
In step S3, an insulating layer is formed on the surface of the ridge stripe structure where the first trench and the second trench are formed for electrical isolation.
A first electrical implant window is formed on the upper surface of the ridge and a second electrical implant window is formed on the second mesa on the ridge structure with the insulating layer.
And preparing a metal layer on the upper surface of the ridge structure with the double-groove structure and the insulating layer, which forms the first electric injection window and the second electric injection window, by utilizing a sputtering or evaporation process for forming a metal electrode.
And etching the metal layer on the table top between the second electric injection window and the nearest second groove to form an electric isolation groove, wherein the depth of the electric isolation groove is equal to the thickness of the metal layer, and the electric isolation groove is used for forming a metal electrode: a p-type top electrode at the first electrical injection window and a p-type gate electrode at the second electrical injection window.
And forming an n-type back electrode on the back surface of the semiconductor epitaxial layer structure with the ridge structure, namely the lower surface of the n-type GaAs substrate.
(III) advantageous effects
According to the technical scheme, the invention has the following beneficial effects:
1. the preparation method of the wide-spectrum thyristor laser provided by the invention is characterized in that an upper N-type region is introduced by combining a Pin structure of a traditional laser and a PNPN structure of a traditional thyristor to prepare the gate-controlled laser of the PNPin structure, wherein a tunnel junction layer consisting of an ultrathin heavily-doped N-type layer and a heavily-doped p-type layer and a p-type gate electrode are used, so that a three-pole wide-spectrum laser device with high output power, better stability and gate controllability can be obtained.
2. The preparation method of the wide-spectrum thyristor laser is based on the process manufacture of the ridge waveguide laser, so that the preparation process is simple and easy to repeat, and batch production is easy to realize.
3. According to the preparation method of the wide-spectrum thyristor laser, the quantum well material is used as the active region, so that the epitaxial layer structure can be grown by using a Metal Oxide Chemical Vapor Deposition (MOCVD) method, and batch production is easy.
4. According to the preparation method of the wide-spectrum thyristor laser, due to the introduction of the double-groove structure on the two sides of the ridge, good lateral light field limitation can be guaranteed, and fundamental transverse mode lasing can be achieved.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a broad-spectrum thyristor laser according to the present invention.
FIG. 2 is a semiconductor epitaxial layer structure of a broad spectrum thyristor laser with GaAs base band gate electrode according to an embodiment of the present invention;
FIG. 3 is a ridge structure of a broad spectrum thyristor laser with GaAs baseband gate electrodes according to an embodiment of the present invention;
FIG. 4 shows a ridge structure of a wide-spectrum thyristor laser with GaAs base band gate electrodes, where the mesas on both sides of the ridge are covered with photoresist masks according to an embodiment of the present invention;
FIG. 5 shows a double trench structure formed on a ridge structure in a broad spectrum thyristor laser with GaAs base band gate electrodes according to an embodiment of the present invention;
FIG. 6 shows an insulating layer formed on a ridge structure having a double-trench structure in a broad-spectrum thyristor laser having a GaAs baseband gate electrode according to an embodiment of the present invention;
FIG. 7 is a first electrical injection window formed on a ridge with an insulating layer in a broad spectrum thyristor laser with GaAs baseband gate electrodes according to an embodiment of the present invention;
FIG. 8 is a second electrical injection window formed on a ridge structure mesa with a first electrical injection window in a broad spectrum thyristor laser of a GaAs baseband gate electrode according to an embodiment of the present invention;
FIG. 9 is a metal layer formed on a ridge structure with an electrical injection window in a broad spectrum thyristor laser with GaAs baseband gate electrodes according to an embodiment of the present invention;
FIG. 10 shows an embodiment of the present invention, a wide-spectrum thyristor laser with GaAs base band gate electrodes, in which an electrical isolation trench, a p-type top electrode, and a p-type gate electrode are formed on a metal layer on a ridge structure with an electrical injection window;
fig. 11 shows an n-type back electrode formed on the back of a ridge structure electrically isolating a trench, a p-type top electrode and a p-type gate electrode in a broad spectrum thyristor laser with GaAs base band gate electrodes according to an embodiment of the present invention.
Wherein, 1 is an n-type back electrode, 2 is an n-type GaAs substrate, 3 is an n-GaAs buffer layer, 4 is an n-AlGaAs cap layer, 5 is an i-AlGaAs lower limiting layer, 6 is an i-GaAs lower waveguide layer, 7 is a quantum well active region, 8 is an i-GaAs upper waveguide layer, 9 is an i-AlGaAs upper limiting layer, 10 is a p-type gate electrode contact layer, 11 is an i-GaAs spacer layer, 12 is a GaAs tunnel junction, 13 is an n-AlGaAs gradual transition layer, 14 is a p-AlGaAs cap layer, 15 is a p-GaAs contact layer, 16 is a p-type top electrode, 17 is an insulating layer, 18 is a metal layer, 19 is a p-type gate electrode, 20 is a dielectric protective layer, and 21 is a photoresist layer;
a is a first mesa, B is a second mesa, C is a ridge, D is a first trench, E is a second trench, F is a first electrical injection window, G is a second electrical injection window, and H is an electrical isolation trench.
Detailed Description
The wide spectrum thyristor laser of GaAs baseband gate electrode possesses the PiN structure of traditional laser instrument and the PNPN structure of traditional thyristor simultaneously, and top-down includes in proper order: the PNPiN structure comprises an upper P type area, an upper N type area, a lower P type area, a lower N type area and an i type area, wherein the i type area is positioned between the lower P type area and the lower N type area, so that the PNPiN structure is integrally formed.
PNPiN structure of broad spectrum thyristor laser: the lower N-type region sequentially comprises from bottom to top: an n-type GaAs substrate, an n-GaAs buffer layer and an n-AlGaAs cover layer; the i-type zone sequentially comprises from bottom to top: the quantum well structure comprises an i-AlGaAs lower limiting layer, an i-GaAs lower waveguide layer, a quantum well active region, an i-GaAs upper waveguide layer and an i-AlGaAs upper limiting layer; the lower P-type zone sequentially comprises from bottom to top: a p-type gate electrode contact layer, an i-GaAs spacing layer; the upper N-type region includes: an n-AlGaAs graded transition layer; go up P type district from bottom to top and include in proper order: the p-AlGaAs cover layer, the p-GaAs contact layer, the n-type back electrode positioned on the lower surface of the n-type GaAs substrate, the insulating layer covering the ridge structure, the p-type top electrode on the upper surface of the ridge and the p-type gate electrode on the second table surface.
The quantum well active region of the i-type region is used for generating laser by carrier stimulated radiation; the quantum well active region comprises at least 1 quantum well structure for realizing the lasing of wide spectrum light waves. The quantum well structure includes: the quantum well layer and the barrier layer, when the component material of the quantum well layer is InGaAs material, the component material of the barrier layer is GaAs material, when the component material of the quantum well layer is GaAs material, the component material of the barrier layer is AlGaAs material. When the quantum well layers are made of InGaAs materials and the number of the quantum well layers is n, the barrier layers are located between the adjacent quantum well layers, namely the number of the barrier layers is n-1; when the composition material of the quantum well layer is a GaAs material and the number thereof is n, the quantum well layer is located between adjacent barrier layers, that is, the number of barrier layers is n + 1.
The lower P-type region includes: the p-type gate electrode is used for triggering and conducting pulse current of the broad spectrum thyristor laser, reduces the breakover voltage of the device and enhances the controllability and stability of the device.
A GaAs tunnel junction is arranged between the upper N-type region and the lower P-type region and used for providing an energy level stretching effect to enable the quantum well of the active region to incline, so that the energy level in the quantum well is split, laser generated by a broad spectrum is further excited, and meanwhile transition is realized by applying the GaAs tunnel junction, so that the transition voltage of the device can be reduced, and the device can be started quickly. Wherein, GaAs tunnel junction includes from top to bottom in proper order: the heavily doped N-type layer and the heavily doped P-type layer are used for reducing the reverse breakdown voltage of the tunnel junction so as to enable the device to be quickly started, the heavily doped N-type layer belongs to the upper N-type region, and the heavily doped P-type layer belongs to the lower P-type region and is used for meeting the requirements of 'thickness thinness and heavy doping' required by the tunneling characteristic of the tunnel junction, so that the reverse breakdown voltage of the tunnel junction is remarkably reduced, and the device is favorably and quickly started.
The i-GaAs lower waveguide layer is in contact with the lower surface of the quantum well active region layer, the i-GaAs upper waveguide layer is in contact with the upper surface of the quantum well active region layer, and the i-GaAs upper waveguide layer and the i-GaAs lower waveguide layer jointly form a large optical cavity asymmetric waveguide structure which is used for ensuring that laser radiated from the quantum well active region layer is radiated in a fundamental transverse mode in the vertical direction and pulling down an optical field of the laser towards the substrate direction, so that the overlapping of the optical field and the p-type gate electrode contact layer is reduced, the internal loss is reduced, and the output power is improved. In addition, the structure of the large optical cavity reduces the end face catastrophic burnout caused by high optical power density at the laser emitting end face, and improves the working reliability of the wide-spectrum thyristor laser.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings in conjunction with the specific embodiment 1.
In specific embodiment 1, a method for manufacturing a wide-spectrum thyristor laser with a 1060nm wavelength InGaAs/GaAs baseband gate electrode is provided, as shown in fig. 1, and includes:
step S1, preparing a semiconductor epitaxial layer structure,
epitaxially growing a PNPiN structure on a GaAs substrate to obtain a semiconductor epitaxial layer structure, as shown in fig. 2, the semiconductor epitaxial layer structure includes, from bottom to top: a lower N-type region, a lower P-type region, an i-type region, an upper N-type region, and an upper P-type region, as shown in FIG. 1, the lower N-type region sequentially includes from bottom to top: an n-type GaAs substrate 2, an n-GaAs buffer layer 3, and an n-AlGaAs cap layer 4; the i-type zone sequentially comprises from bottom to top: the device comprises an i-AlGaAs lower limiting layer 5, an i-GaAs lower waveguide layer 6, a quantum well active region 7, an i-GaAs upper waveguide layer 8 and an i-AlGaAs upper limiting layer 9; the lower P-type zone sequentially comprises from bottom to top: a p-type gate electrode contact layer 10, an i-GaAs spacer layer 11; the upper N-type region includes: an n-AlGaAs graded transition layer 13; go up P type district from bottom to top and include in proper order: p-AlGaAs cap layer 14, p-GaAs contact layer 15. Go up and include one deck GaAs tunnel junction 12 between N type district and the lower P type district, GaAs tunnel junction 12 includes from top to bottom in proper order: the heavily doped N-type layer belongs to the upper N-type region, and the heavily doped P-type layer belongs to the lower P-type region. Wherein, a semiconductor epitaxial layer structure is formed by adopting a Metal Oxide Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) method.
Preferably, the n-GaAs buffer layer 3 formed on the n-GaAs substrate 2 is made of an n-type doped GaAs material, and has a thickness of 400 nm; the n-AlGaAs cap layer 4 is made of n-type Al0.47GaAs material, the thickness is 1800 nm; : the lower limiting layer 5 of i-AlGaAs is made of i-type Al0.26GaAs material with a thickness of 100 nm; the thickness of the i-GaAs lower waveguide layer 6 is 650 nm; the quantum well active region 7 comprises 2 In0.3GaAs/GaAs quantum well structures; the thickness of the i-GaAs upper waveguide layer 8 is 350 nm; the upper confinement layer 9 of i-AlGaAs is made of i-Al0.26GaAs material with thickness of 400 nm; the p-type gate electrode contact layer 10 is 150nm thick; the i-GaAs spacer layer 11 has a thickness of 35 nm; the N-AlGaAs graded transition layer 13 is made of N-type Al0.26～0.47GaAs material. Wherein, GaAs tunnel junction 12 includes from bottom to top in proper order: a heavily doped N-type GaAs layer with a thickness of 10nm and a heavily doped P-type GaAs layer with a thickness of 8nm, wherein the doping concentrations of the two GaAs layers are both 1 × 1019cm-3。
Step S2, forming a ridge structure on the semiconductor epitaxial layer structure,
step S201, depositing a dielectric protection layer 20 on the upper surface of the semiconductor epitaxial layer structure shown in FIG. 1, namely the upper surface of the p-GaAs contact layer 15 by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, wherein the dielectric protection layer is made of SiO2、SiNx、ZrO2Or TiO2The deposition thickness is 450 nm-500 nm. Carrying out first photoetching by using a designed ridge stripe photoetching plate and adopting a standard photoetching process to transfer a ridge stripe pattern onto the photoresist; with the photoresist as the mask, large tracts of land etching medium protective layer and semiconductor epitaxial layer structure to P type grid electrode contact layer 10 upper surface form the ridge structure, and the washing of removing the glue remains the medium protective layer, and the ridge device structure that possesses the ridge structure that obtains is shown in fig. 3, and shown ridge structure includes: the ridge C and the first mesa A and the second mesa B formed on two sides of the ridge C. The method for determining the ridge stripe pattern by photoetching comprises the steps of photoresist throwing, exposing, developing and hardening by adopting a standard photoetching process, and transferring the pattern on a photoetching plate onto the photoresist; the large-area etching adopts an inductively coupled plasma dry etching method (ICP), which comprises the following steps: performing dry etching by using the photoresist as a mask, wherein the photoresist protects the dielectric protection layer 20 on the ridge C, and the dielectric protection layer 20 in the region without the photoresist is etched away to form a dielectric material hard mask pattern; and (4) continuing dry etching by using the dielectric protection layer 20 as a hard mask, controlling the etching to etch through the i-GaAs spacing layer 11, stopping on the p-type gate electrode contact layer 10, and reducing the depth of the i-GaAs spacing layer entering the p-type gate electrode contact layer 10 as much as possible.
Preferably, a layer of 450nm SiO is deposited on the P surface of the semiconductor epitaxial layer structure by plasma enhanced chemical vapor deposition2As the dielectric protective layer 20, a designed ridge stripe-shaped photomask with a stripe width of 3 μm is used, a standard photolithography process is adopted to perform a first photolithography, a ridge stripe pattern on the photomask is transferred onto the photoresist, the photoresist is used as a mask, and an inductively coupled plasma method is adopted to perform dry etching on SiO2Dielectric protective layer 20 of SiO2Hard mask, continuously dry etching the semiconductor epitaxial layer structure material, and controlling the etchingThe i-GaAs spacing layer 11 is just etched through, the P-type grid electrode contact layer 10 is stopped, a ridge C with the width of 3 mu m is formed, photoresist is removed, cleaning is carried out, and SiO on the ridge is reserved2A dielectric protective layer 20;
step S202, throwing a layer of photoresist again, performing secondary photolithography by using a designed photolithography mask and a standard reverse photolithography process to expose a window for double-trench etching, forming a photoresist layer 21 on the first mesa a and the second mesa B as a mask to protect the second mesa B, and forming a double-trench mask pattern by using the dielectric protection layer 20 as a mask to protect the ridge C, as shown in fig. 4. The layout adopted by the secondary photoetching is a simple strip-shaped window, the photoresist of the second table top B is reserved after the reverse photoetching, the photoresist comprising the ridge stripe C outside the second table top B is removed by developing and dissolving, and the photoresist layer 21 of the second table top B and the dielectric protection layer 20 of the ridge stripe C form a double-groove masking pattern together;
preferably, a stripe window reticle width of 20 μm is used.
Step S203, etching the P-type gate electrode contact layer 10 without the mask protection of the photoresist layer 21 on the first mesa A and the second mesa B, wherein the depth can reach the i-AlGaAs upper limiting layer 9, and forming a double-groove structure at two sides of the ridge C: a first trench D and a second trench E as shown in fig. 5.
Preferably, the etching is performed by an Inductively Coupled Plasma (ICP) dry etching method, during which the i-AlGaAs confinement layer 9 cannot be penetrated.
And step S3, preparing electrodes on the ridge structure to obtain the wide-spectrum thyristor laser.
Step S301: after photoresist stripping, the remaining dielectric protection layer 20 is wet etched away, and after cleaning, an insulating layer 17 is re-deposited for electrical isolation, as shown in fig. 6. Wherein, the wet etching adopts hydrofluoric acid buffer solution to etch the medium protective layer 20, and the preparation material of the deposited insulating layer 17 is SiO2、SiNx、ZrO2Or TiO2。
Preferably, the wet etching adopts hydrofluoric acid buffer solution with the volume ratio of HF to NH4F∶H2O3: 6: 10, deposition of SiO2As the insulating layer 17, the thickness was 350 nm.
Step S302, performing reverse photolithography by using the reticle designed in step S202, and controlling exposure and development time by using a self-aligned process, so that only the photoresist above the ridge C is dissolved and removed by the developer, and wet etching the insulating layer 17 without photoresist protection to form a first electrical injection window F on the upper surface of the ridge C, as shown in fig. 7. After photoresist removing and cleaning, spin coating again, using the designed gate electrode window plate, and adopting a standard photolithography process to manufacture a mask, and wet etching the insulating layer 17 without photoresist protection to form a second electrical injection window G on the second mesa B, as shown in fig. 8.
Preferably, the wet etching uses a hydrofluoric acid buffer solution to etch the insulating layer 17, and the volume ratio of the hydrofluoric acid buffer solution used in the wet etching is HF: NH4F∶H2O＝3∶6∶10。
Step 303, sputtering or evaporating the metal layer 18 on the upper surface (P surface) of the epitaxial layer structure after cleaning, as shown in fig. 9; then, an electrical isolation trench H is formed on the metal layer of the mesa between the second electrical injection window and the nearest neighboring second trench by photolithography and etching using an electrode plate, and a P-type top electrode 16 on the upper surface of the ridge C and a P-type gate electrode 19 on the second mesa B are simultaneously formed, as shown in fig. 10. Wherein, the preparation material of the metal layer 18 formed by sputtering or evaporation is Ti/Au or An/Zn, and iodine solution and hydrofluoric acid buffer solution are adopted for corrosion.
Preferably, 50nm Ti and 400nm Au are sequentially sputtered on the upper surface (P surface) of the epitaxial layer structure to form a Ti/Au metal layer 18; then, the electrode plate is utilized to photoetch the isolation trench pattern, and the volume ratio I is adopted in sequence2∶KI∶H2Etching Au layer with iodine solution of O1: 4: 10 by HF: NH4F∶H2And etching the Ti layer by using hydrofluoric acid buffer solution with O being 3: 6: 10, photoetching and etching by using an electrode plate on the metal layer of the table top between the second electric injection window and the nearest second groove to form an electric isolation groove H, and simultaneously forming a P-type top electrode 16 on the upper surface of the ridge C and a P-type gate electrode 19 on the second table top B.
Step 304, thinning and polishing the lower surface of the N-type GaAs substrate on the back of the semiconductor epitaxial layer structure, directly evaporating an electrode on the lower surface to form an N-type back electrode 1, finally performing alloying treatment, and finally forming the wide-spectrum thyristor laser of the GaAs base band gate electrode of the PNPiN structure, wherein the prepared sample wafer can be treated as a single tube core as shown in FIG. 11.
Preferably, the material of the n-type back electrode 1 formed by evaporation can be Au, Ge, Ni/Au; the alloying treatment conditions are as follows: under the protection of nitrogen and hydrogen, alloy 50s at 450 ℃ to form the n-type back electrode 1.
Preferably, in the etching process of the semiconductor epitaxial layer structure, the etching position can be monitored online by adopting methods such as laser reflectivity measurement and the like, so that the etching process of ICP (inductively coupled plasma) is monitored in real time, and the etching stop position is judged in time. For example, a laser reflectivity measuring device is used for monitoring, the monitored reflectivity of the semiconductor epitaxial layer is subjected to oscillation change along with the increase of etching time, and the peak-valley number of the reflectivity curve corresponds to the thickness of the material, so that the monitoring and the control of the etching position are realized.
The wide-spectrum thyristor laser with the 1060nm wavelength InGaAs/GaAs baseband gate electrode prepared by the method can be cleaved into a single tube core with the width of 300 mu m and the cavity length of 300 mu m-2000 mu m.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for preparing a wide-spectrum thyristor laser comprises the following steps:
s1, preparing a semiconductor epitaxial layer structure,
s2, forming a ridge structure on the semiconductor epitaxial layer structure, wherein the ridge structure comprises a ridge, a first mesa and a second mesa, the first mesa and the second mesa are formed on two sides of the ridge, the depth of the ridge is equal to the sum of the thicknesses of the i-GaAs spacing layers of the upper P-type region, the upper N-type region and the lower P-type region,
s3, preparing electrodes on the ridge structure to obtain the wide-spectrum thyristor laser;
in step S1, the semiconductor epitaxial layer structure is prepared from bottom to top in sequence: lower N type district, i type district, lower P type district, go up N type district and go up P type district, lower N type district include from bottom to top in proper order: an n-type GaAs substrate, an n-GaAs buffer layer and an n-AlGaAs cover layer; the i-type zone sequentially comprises from bottom to top: the lower limiting layer of i-AlGaAs, the lower waveguide layer of i-GaAs, the upper limiting layer of i-AlGaAs; the lower P-type area sequentially comprises from bottom to top: a p-type gate electrode contact layer, an i-GaAs spacing layer; the upper P-type area sequentially comprises from bottom to top: p-AlGaAs cap layer, p-GaAs contact layer; the upper N-type region comprises: and the N-AlGaAs graded transition layer is positioned between the upper P type region and the lower P type region to form a PNPiN basic structure.
2. The method of claim 1, wherein a quantum well active region is formed between the i-GaAs upper and lower waveguide layers of the i-type region for lasing.
3. The method of claim 1, wherein a GaAs tunnel junction is formed between the upper N-type region and the lower P-type region, the GaAs tunnel junction comprising a heavily doped P-type layer formed on the i-GaAs spacer layer and a heavily doped N-type layer formed on the heavily doped P-type layer, the heavily doped P-type layer being formed on the i-GaAs spacer layer and belonging to the lower P-type region; the heavily doped N-type layer is positioned below the N-AlGaAs gradual transition layer and belongs to an upper N-type region.
4. The method of claim 1, wherein in step S2, the surface of the upper P-type region of the epitaxial layer structure is etched to form a ridge structure.
5. The method of claim 4, wherein the first and second mesas on either side of the ridge are etched to form first and second trenches, the bottoms of the first and second trenches being located in the upper i-AlGaAs confining layer of the i-type region.
6. The method of claim 5, wherein in step S3, an insulating layer is formed on the surface of the ridge stripe structure for electrical isolation.
7. The method of claim 6, wherein a first electrical injection window is formed on an upper surface of the ridge and a second electrical injection window is formed on the second mesa on the ridge structure having the insulating layer.
8. The method of claim 7, wherein a metal layer is formed on the upper surface of the ridge stripe structure having the double trench structure and the insulating layer, which forms the first and second electrical injection windows, by a sputtering or evaporation process to form a metal electrode.
9. The method of claim 8, wherein the metal layer of the mesa between the second electrical injection window and the nearest neighbor second trench is etched to form an electrical isolation trench having a depth equal to a thickness of the metal layer for forming a metal electrode: a p-type top electrode at the first electrical injection window and a p-type gate electrode at the second electrical injection window.
10. The method of claim 9, wherein an n-type back electrode is formed on a back surface of the semiconductor epitaxial layer structure having the ridge structure, i.e., on a lower surface of the n-type GaAs substrate.
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| RU2726382C1 (en) * | 2019-12-26 | 2020-07-13 | Акционерное общество "НИИ "Полюс" им. М.Ф. Стельмаха" (АО "НИИ "Полюс" им. М.Ф. Стельмаха") | Thyristor laser |
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| CN103647217A (en) * | 2013-12-19 | 2014-03-19 | 中国科学院半导体研究所 | PiNiN structure thyristor laser |
| CN104051961A (en) * | 2014-06-26 | 2014-09-17 | 南京青辰光电科技有限公司 | Thyristor laser of PNiN structure |
| CN106356716A (en) * | 2016-11-04 | 2017-01-25 | 中国科学院半导体研究所 | GaAs-based broadband spectrum thyristor laser device with gate electrode |
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| CN103647217A (en) * | 2013-12-19 | 2014-03-19 | 中国科学院半导体研究所 | PiNiN structure thyristor laser |
| CN104051961A (en) * | 2014-06-26 | 2014-09-17 | 南京青辰光电科技有限公司 | Thyristor laser of PNiN structure |
| CN106356716A (en) * | 2016-11-04 | 2017-01-25 | 中国科学院半导体研究所 | GaAs-based broadband spectrum thyristor laser device with gate electrode |
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| RU209746U1 (en) * | 2021-11-19 | 2022-03-22 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" (НовГУ) | Magnetoelectric thyristor |
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