CN107069427A - The preparation method of wide spectrum thyristor laser - Google Patents
The preparation method of wide spectrum thyristor laser Download PDFInfo
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- CN107069427A CN107069427A CN201710062988.8A CN201710062988A CN107069427A CN 107069427 A CN107069427 A CN 107069427A CN 201710062988 A CN201710062988 A CN 201710062988A CN 107069427 A CN107069427 A CN 107069427A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
Abstract
The invention discloses a kind of preparation method of wide spectrum thyristor laser, it is related to technical field of semiconductor device preparation.Preparation method disclosed by the invention includes：Semiconductor epitaxial Rotating fields are prepared on substrate, ridge strip structure is formed on semiconductor epitaxial Rotating fields, electrode is prepared on ridge strip structure and obtains described wide spectrum thyristor laser.Wherein, by combining N-type region in the PiN structures of conventional laser and the PNPN structures of traditional thyristors, introducing, completion possesses high-output power, and has the preparation of the PNPiN structure wide spectrum thyristor lasers of high stability and controllability.Preparation technology is simply controllable, with low cost, it is easy to accomplish batch production.
Description
Technical field
The present invention relates to technical field of semiconductor device preparation, more particularly to a kind of preparation of wide spectrum thyristor laser
Method.
Background technology
Wide spectrum light source has the advantages that wide spectrum, high intensity, high spatial degree of coherence, leads in frequency clock, laser radar, light
The fields such as letter, ultrashort pulse compression, optical coherence imaging, chirped pulse generation and optical metrology are widely used.For example：
Super-radiance light emitting diode (Superluminescent Diode, SLD), quantum dot (Quantum dot)/quantum rod
(Quantum dash) laser, chirp SQW super-radiance light emitting diode (Chirp Quantum Well SLD) etc. are based on
The wide spectrum light source of semiconductor technology, with spectral width, cost be low, small volume advantage, solves the body of traditional wide range laser
Product is excessive, the problem of narrow application range.
At present, semiconductor broad spectrum light source still suffers from that power is too low, and the scope of application is small, and stability and controllability are poor etc.
Problem, very big influence is generated on the practical application of such opto-electronic device.IGCT is that one kind develops on the basis of transistor
The pole device of semiconductor three got up, with high-power, unilateal conduction and the controllable feature of ON time grid, is mainly used in electric power
In terms of rectification, inversion, pressure regulation and switch in electronic applications.
Therefore, thyristor structure is combined together by wide spectrum thyristor laser with semiconductor wide range laser, with reference to
The PiN structures of conventional laser and the PNPN structures of traditional thyristors, the GaAs base novel PNPiN structure thyristors prepared
Laser, by introducing gate electrode control in the laser, combines the excellent of thyristor device and broad spectrum light source well
Point, improves the overall performance of such laser.
The content of the invention
(1) technical problem to be solved
For a kind of wide spectrum thyristor laser of new GaAs base band gate electrodes, to obtain with height output work(
Rate, and have the wide spectrum pulsed laser output of better stability and controllability, and simplify manufacture craft, cost is reduced, realizes and criticizes
Amount production.
(2) technical scheme
In view of the above-mentioned problems, the present invention proposes a kind of preparation method of wide spectrum thyristor laser, including following step
Suddenly：
S1, semiconductor epitaxial Rotating fields are prepared,
S2, on semiconductor epitaxial Rotating fields ridge strip structure is formed,
S3, prepare electrode on ridge strip structure and obtain wide spectrum thyristor laser.
In step sl, semiconductor epitaxial Rotating fields are sequentially prepared from bottom to top：Lower N-type region, i types area, lower p type island region, upper P
Type area, lower N-type region includes successively from bottom to top：N-type GaAs substrates, n-GaAs cushions, n-AlGaAs cap rocks；I types area is under
And on also include successively：I-AlGaAs lower limit layers, i-GaAs lower waveguide layers, the upper ducting layers of i-GaAs, limit on i-AlGaAs
Layer；Lower p type island region includes successively from bottom to top：P-type gate electrode contact layer, i-GaAs walls；Wrap successively from bottom to top upper p type island region
Include：P-AlGaAs cap rocks, p-GaAs contact layers.
Quantum well active district is formed between ducting layer and i-GaAs lower waveguide layers on the i-GaAs in i types area, for producing
Laser.
N-type region on being formed on the lower p type island region of semiconductor epitaxial Rotating fields, upper N-type region includes：N-AlGaAs gradual transitions
Layer, upper N-type region is located between upper p type island region and lower p type island region, to form PNPiN basic structures.
GaAs tunnel knots are formed between upper N-type region and lower p type island region, GaAs tunnel knots include heavily-doped p-type layer and formed
In the highly doped n-type layer on heavily-doped p-type layer, heavily-doped p-type layer is formed on i-GaAs walls, belongs to lower p type island region；It is heavily doped
Miscellaneous n-layer is located at n-AlGaAs gradual transitions layer lower section, belongs to N-type region.
In step s 2, the upper p type island region surface of semiconductor epitaxial layer structure is performed etching to form ridge strip structure, vallum
Structure includes vallum and is formed at the first table top and the second table top of vallum both sides, ridge depth and upper p type island region, upper N-type region
And the thickness sum of the p-type gate electrode contact layer of lower p type island region is equal.
The first table top and the second table top of vallum both sides are performed etching to form first groove and second groove, first groove
It is located at the bottom of second groove in the i-AlGaAs upper limiting layers in i types area.
In step s3, a layer insulating is formed on the ridge strip structure surface for forming first groove and second groove, be used for
It is electrically isolated.
On the ridge strip structure with insulating barrier, the first electrical pumping window is formed in the upper surface of vallum, in the second table top
The second electrical pumping window of upper formation.
Forming the ridge strip structure with double ditch structures and insulating barrier of the first electrical pumping window and the second electrical pumping window
Upper surface, prepares metal level, for forming metal electrode using sputtering or evaporation technology.
The metal level of table top between second electrical pumping window and the second groove of arest neighbors is performed etching to form an electricity
Isolating trenches, are electrically isolated the thickness that trench depth is equal to metal level, for forming metal electrode：Positioned at the p-type of the first electrical pumping window
Top electrode and the p-type gate electrode positioned at the second electrical pumping window.
Possessing the semiconductor epitaxial layers structured rear surface of ridge strip structure, i.e. one layer of n-type back of the body of n-type GaAs substrates lower surface formation
Electrode.
(3) beneficial effect
It can be seen from the above technical proposal that the invention has the advantages that：
1st, the preparation method of wide spectrum thyristor laser that the present invention is provided, with reference to conventional laser PiN structures and
N-type region in the PNPN structures of traditional thyristors, introducing, prepares the grid-control laser of PNPiN structures, wherein, by ultra-thin
The tunnel junction layer of highly doped n-type layer and heavily-doped p-type layer composition, and p-type gate electrode, so can obtain with height output work(
Rate, and have better stability and three pole wide spectrum laser devices of grid controllability.
2nd, the preparation method for the wide spectrum thyristor laser that the present invention is provided, due to the technique system of ridge waveguide laser
Based on, manufacture craft is simple, easily repeat, and easily realizes batch production.
3rd, the preparation method for the wide spectrum thyristor laser that the present invention is provided, due to using quantum-well materials as active
Area, so metal oxide chemical vapor deposition (MOCVD) method can be used to carry out epitaxial layer structure growth, it is easy to which batch is raw
Production.
4th, the preparation method for the wide spectrum thyristor laser that the present invention is provided, due to introducing double ditch knots of vallum both sides
Structure, ensure that good lateral light field limitation, realizes fundamental transverse mode lasing.
Brief description of the drawings
Fig. 1 is the preparation method schematic flow sheet of wide spectrum thyristor laser proposed by the present invention.
Fig. 2 is partly leading for the wide spectrum thyristor laser of the GaAs base band gate electrodes of specific embodiment one proposed by the present invention
Body epitaxial layer structure；
Fig. 3 is the vallum of the wide spectrum thyristor laser of the GaAs base band gate electrodes of specific embodiment one proposed by the present invention
Structure；
Fig. 4 be the GaAs base band gate electrodes of specific embodiment one proposed by the present invention wide spectrum thyristor laser in ridge
Ridge strip structure covered with photoresist mask on the table top of bar both sides；
Fig. 5 be the GaAs base band gate electrodes of specific embodiment one proposed by the present invention wide spectrum thyristor laser in ridge
Structrural build up pair of ditch structure of bar；
Fig. 6 be the GaAs base band gate electrodes of specific embodiment one proposed by the present invention wide spectrum thyristor laser in tool
The insulating barrier formed on the ridge strip structure of standby double ditch structures；
Fig. 7 be the GaAs base band gate electrodes of specific embodiment one proposed by the present invention wide spectrum thyristor laser in tool
The the first electrical pumping window formed on the vallum of standby insulating barrier；
Fig. 8 be the GaAs base band gate electrodes of specific embodiment one proposed by the present invention wide spectrum thyristor laser in tool
The the second electrical pumping window formed on the ridge strip structure table top of standby first electrical pumping window；
Fig. 9 be the GaAs base band gate electrodes of specific embodiment one proposed by the present invention wide spectrum thyristor laser in tool
The metal level formed on the ridge strip structure of standby electrical pumping window；
Figure 10 be the GaAs base band gate electrodes of specific embodiment one proposed by the present invention wide spectrum thyristor laser in
Possess to be formed on the metal level on the ridge strip structure of electrical pumping window and be electrically isolated ditch, p-type top electrode and p-type gate electrode；
Figure 11 be the GaAs base band gate electrodes of specific embodiment one proposed by the present invention wide spectrum thyristor laser in
It is electrically isolated the n-type back electrode that the back side of the ridge strip structure of ditch, p-type top electrode and p-type gate electrode is formed.
Wherein, 1 is n-type back electrode, and 2 be n-type GaAs substrates, and 3 be n-GaAs cushions, and 4 be n-AlGaAs cap rocks, and 5 are
I-AlGaAs lower limit layers, 6 be i-GaAs lower waveguide layers, and 7 be Quantum well active district, and 8 be ducting layer on i-GaAs, and 9 be i-
AlGaAs upper limiting layers, 10 be p-type gate electrode contact layer, and 11 be i-GaAs walls, and 12 be GaAs tunnel knots, and 13 be n-
AlGaAs gradual transitions layer, 14 be p-AlGaAs cap rocks, and 15 be p-GaAs contact layers, and 16 be p-type top electrode, and 17 be insulating barrier,
18 be metal level, and 19 be p-type gate electrode, and 20 be medium protective layer, and 21 be photoresist layer；
A is the first table top, and B is the second table top, and C is vallum, and D is first groove, and E is second groove, and F is the first electrical pumping
Window, G is the second electrical pumping window, and H is electrically isolated ditch.
Embodiment
The PiN structures and tradition that the wide spectrum thyristor laser of GaAs base band gate electrodes is provided simultaneously with conventional laser are brilliant
The PNPN structures of brake tube, include successively from top to bottom：Upper p type island region, upper N-type region, lower p type island region, lower N-type region, wherein also one i
Type area is located between lower p type island region and lower N-type region, so as to constitute PNPiN structures on the whole.
The PNPiN structures of wide spectrum thyristor laser：Lower N-type region includes successively from bottom to top：N-type GaAs substrates, n-
GaAs cushions, n-AlGaAs cap rocks；I types area also includes successively from bottom to top：Waveguide under i-AlGaAs lower limit layers, i-GaAs
The upper ducting layer of layer, Quantum well active district, i-GaAs, i-AlGaAs upper limiting layers；Lower p type island region includes successively from bottom to top：P-type grid
Contact electrode layer, i-GaAs walls；Upper N-type region includes：N-A1GaAs gradual transitions layer；Wrap successively from bottom to top upper p type island region
Include：P-AlGaAs cap rocks, p-GaAs contact layers, in addition, the n-type back electrode also positioned at n-type GaAs substrate lower surfaces, with
And it is covered in the p-type gate electrode on the insulating barrier on ridge strip structure, the p-type top electrode of vallum upper surface and the second table top.
Wherein, the Quantum well active district in i types area is used for carrier stimulated radiation generation laser；Quantum well active district is included extremely
Few 1 quantum well structure, the lasing for realizing wide spectrum light wave.Quantum well structure includes：Quantum well layer and barrier layer, equivalent
When the composition material of sub- well layer is InGaAs materials, barrier layer composition material is GaAs materials, when the composition material of quantum well layer
During for GaAs materials, barrier layer composition material is AlGaAs materials.The composition material of quantum well layer be InGaAs materials and its
When number is n, barrier layer is located between adjacent quantum well layer, i.e., the number of barrier layer is n-1；When the composition material of quantum well layer
Material is GaAs materials and when its number is n, and quantum well layer is located between adjacent barrier layer, i.e., the number of barrier layer is n+1.
Lower p type island region includes：P-type gate electrode, pulse current triggering and conducting is realized for wide spectrum thyristor laser, reduction
The break over voltage of device, enhances the controllability and stability of device.
Include one layer of GaAs tunnel knot between upper N-type region and lower p type island region, for providing energy level stretching action so that active area
SQW run-off the straight so that the energy level in SQW divides, so inspire wide spectrum generation laser, simultaneously lead to
Cross using GaAs tunnel knot transition, the break over voltage of device can be reduced, quickly started beneficial to device.Wherein, GaAs tunnel knots
Include successively from top to bottom：Highly doped n-type layer and heavily-doped p-type layer, for reducing the breakdown reverse voltage of tunnel knot with closet
Part is quickly opened, and highly doped n-type layer belongs to N-type region, and heavily-doped p-type layer belongs to described lower p type island region, for meeting tunnel knot
The requirement of " thickness of thin, heavy doping " necessary to tunneling characteristics, making the breakdown reverse voltage of tunnel knot significantly reduces, and is conducive to device
Part is quickly opened.
I-GaAs lower waveguide layers are contacted with described Quantum well active district layer lower surface, the upper ducting layers of i-GaAs and SQW
Ducting layer collectively constitutes large-optical-cavity asymmetric waveguides with i-GaAs lower waveguide layers on active region layer upper surface, wherein i-GaAs
Structure, for ensureing from the laser that gives off of Quantum well active district layer in vertical direction fundamental transverse mode lasing, while the light of laser
Field is pulled down to substrate direction, is reduced light field and overlapping, the reduction internal loss of p-type gate electrode contact layer, is improved power output.And
And, the structure of large-optical-cavity reduces end face catastrophic caused by the high optical power density of laser emitting end and burnt, and improves
The reliability of wide spectrum thyristor laser work.
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment 1, and join
According to accompanying drawing, the present invention is described in further detail.
A kind of wide spectrum IGCT of 1060nm wavelength InGaAs/GaAs base band gate electrodes is proposed in specific embodiment 1
The preparation method of laser, as shown in figure 1, including：
Step S1, semiconductor epitaxial Rotating fields are prepared,
Epitaxial growth PNPiN structures, obtain semiconductor epitaxial Rotating fields on gaas substrates, as shown in Fig. 2 outside semiconductor
Prolong Rotating fields structure includes from bottom to top：Lower N-type region, lower p type island region, i types area, upper N-type region, upper p type island region, as shown in figure 1, lower N
Type area includes successively from bottom to top：N-type GaAs substrates 2, n-GaAs cushions 3, n-AlGaAs cap rocks 4；I types area from bottom to top according to
It is secondary including：The upper ducting layer 8 of i-AlGaAs lower limit layers 5, i-GaAs lower waveguide layers 6, Quantum well active district 7, i-GaAs, i-
AlGaAs upper limiting layers 9；Lower p type island region includes successively from bottom to top：P-type gate electrode contact layer 10, i-GaAs walls 11；Upper N
Type area includes：N-AlGaAs gradual transitions layer 13；Upper p type island region includes successively from bottom to top：P-AlGaAs cap rocks 14, p-GaAs connect
Contact layer 15.Include one layer of GaAs tunnel knot 12 between upper N-type region and lower p type island region, GaAs tunnel knots 12 include successively from top to bottom：
Highly doped n-type layer and heavily-doped p-type layer, highly doped n-type layer belong to N-type region, and heavily-doped p-type layer belongs to described lower p type island region.
Wherein, using metal oxide chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) method formation semiconductor epitaxial layers knot
Structure.
Preferably, the n-GaAs cushions 3 formed on n-type GaAs substrates 2 are made up of n-type doping GaAs materials, thick
Degree is 400nm；N-AlGaAs cap rocks 4 are by n-type Al0.47GaAs materials are constituted, and thickness is 1800nm；：Limited under i-AlGaAs
Layer 5 is by i types Al0.26GaAs materials are constituted, and thickness is 100nm；The thickness of i-GaAs lower waveguide layers 6 is 650nm；SQW is active
Area 7 includes 2 In0.3GaAs/GaAs quantum well structures；The upper thickness of ducting layer 8 of i-GaAs is 350nm；I-AlGaAs upper limiting layers
9 be by i-Al0.26GaAs materials are constituted, and thickness is 400nm；The thickness of p-type gate electrode contact layer 10 is 150nm；I-GaAs intervals
11 thickness of layer are 35nm；N-AlGaAs gradual transitions layer 13 is by N-type Al0.26~0.47GaAs materials are constituted.Wherein, GaAs tunnels
Knot 12 includes successively from bottom to top：GaAs layers of the heavily doped N-type that thickness is 10nm is GaAs layers of 8nm heavily doped P-types, two with thickness
GaAs layers of doping concentration are 1 × 1019cm-3。
Step S2, on semiconductor epitaxial Rotating fields ridge strip structure is formed,
Step S201, adopt in semiconductor epitaxial Rotating fields upper surface as shown in Figure 1, the i.e. upper surface of p-GaAs contact layers 15
Medium protective layer 20 is deposited with plasma enhanced chemical vapor deposition method (PECVD), medium protective layer uses SiO2、SiNx、
ZrO2Or TiO2, deposition thickness is 450nm~500nm.Using designed ridge reticle, using standard photolithography process, enter
Row first time photoetching, in vallum pattern transfer to photoresist；Using photoresist as mask, large area etch media protective layer and
Semiconductor epitaxial Rotating fields form ridge strip structure to the upper surface of p-type gate electrode contact layer 10, and cleaning of removing photoresist retains media protection
Layer, the obtained ridged device architecture for possessing ridge strip structure is as shown in figure 3, shown ridge strip structure includes：Vallum C and formation
The first table top A and the second table top B in vallum C both sides.Photoetching determines that the method for vallum figure includes the photoetching work using standard
Skill carries out whirl coating, exposes, development, post bake, in the pattern transfer in reticle to photoresist；Large area etching is using sensing coupling
Plasma dry etching method (ICP) is closed, including：With photoresist dry etching, photoresist protection vallum C are carried out as mask
On medium protective layer 20, the medium protective layer 20 of unglazed photoresist protection zone is etched away, and forms the hard mask figure of dielectric material
Shape；Proceed dry etching with medium protective layer 20 for hard shelter, control etching carves saturating i-GaAs walls 11, stops at p
On type gate electrode contact layer 10, reduce the depth for entering p-type gate electrode contact layer 10 as far as possible.
Preferably, on semiconductor epitaxial Rotating fields P faces, one layer is deposited with plasma enhanced chemical vapor deposition method
450nm SiO2As medium protective layer 20, using wide 3 μm of ridge reticle of designed bar, using standard lithographic work
Skill, carries out first time photoetching, in the vallum pattern transfer in reticle to photoresist, using photoresist as mask, using sense
Answer Coupled Plasma Method dry etching SiO2Medium protective layer 20, forms SiO2Hard mask, continues outside dry etching semiconductor
Prolong Rotating fields material, control etching has just cut through i-GaAs walls 11, stopped on p-type gate electrode contact layer 10, forms 3 μm
Wide vallum C, cleaning of removing photoresist retains the SiO on vallum2Medium protective layer 20；
Step S202, one layer of photoresist is got rid of again, using designed reticle, entered using the reversion photoetching process of standard
The secondary photoetching of row, exposes the window of double ditch etchings, and forming photoresist layer 21 on the first table top A and the second table top B is used as mask
The second table top B is protected, using medium protective layer 20 as mask protection vallum C, double ditch masking graphics are constituted, as shown in Figure 4.It is secondary
The domain that photoetching is used is simple marking shape window, and the second table top B photoresist is retained after reversion photoetching, outside the second table top B
The all developed dissolving of photoresist including vallum C is removed, the second table top B photoresist layer 21 and vallum C medium protective layer 20
Collectively form double ditch masking graphics；
Preferably, the marking shape window reticle width used is 20 μm.
P-type gate electrode without the mask protection of photoresist layer 21 on step S203, etching the first table top A and the second table top B
Contact layer 10, depth forms double ditch structures of vallum C both sides up in i-AlGaAs upper limiting layers 9：First groove D and second
Groove E, as shown in Figure 5.
Preferably, etching is used in inductively coupled plasma (ICP) dry etching method, the etching process, it is impossible to
Through i-AlGaAs limiting layers 9.
Step S3, prepare electrode on ridge strip structure and obtain wide spectrum thyristor laser.
Step S301：After removing photoresist, wet etching falls remaining media protective layer 20, a redeposited layer insulating 17 after cleaning
For being electrically isolated, as shown in Figure 6.Wherein, wet etching uses buffered hydrofluoric acid solution corrosive medium protective layer 20, the insulation of deposition
The material for preparing of layer 17 is SiO2、SiNx、ZrO2Or TiO2。
Preferably, the buffered hydrofluoric acid solution volume ratio that wet etching is used is HF: NH4F∶H2O=3: 6: 10, deposit SiO2
It is used as insulating barrier 17, thickness 350nm.
Step S302, using the designed reticles of step S202 reversion photoetching is carried out, using self-registered technology, control exposes
Light and developing time so that the photoresist above only vallum C, which is dissolved by the developing, to be removed, it is exhausted that photoresist that wet etching is unglazed is protected
Edge layer 17, forms the first electrical pumping window F of vallum C upper surfaces, as shown in Figure 7.Remove photoresist after cleaning, again whirl coating, using setting
The gate electrode window version counted, mask, the insulating barrier 17 of photoresist that wet etching is unglazed protection, shape are made using standard photolithography process
Into the second electrical pumping window G on the second table top B, as shown in Figure 8.
Preferably, wet etching uses buffered hydrofluoric acid solution etching insulating layer 17, the hydrofluoric acid buffering that wet etching is used
Liquid volume ratio is HF: NH4F∶H2O=3: 6: 10.
Step 303, to after cleaning epitaxial layer structure upper surface (P faces) sputtering or evapontte ie meti yer 18, such as Fig. 9 institutes
Show；Then, the photoetching of electrode version is utilized on the metal level of table top between the second electrical pumping window and the second groove of arest neighbors simultaneously
Corrosion, which is formed, is electrically isolated ditch H, while the p-type gate electrode 19 on the table top B of p-type top electrode 16 and second of vallum C upper surfaces is formed,
As shown in Figure 10.Wherein, sputter or evaporate the metal level 18 formed and prepare material for Ti/Au or An/Zn, corrosion uses iodine solution
And buffered hydrofluoric acid solution.
Preferably, 50nm Ti and 400nm Au are sputtered successively in epitaxial layer structure upper surface (P faces), Ti/Au gold is formed
Belong to layer 18；Electrode version photoetching isolating trenches figure is recycled, successively using volume ratio I2∶KI∶H2O=1: 4: 10 iodine solution corrosion
Au layers, volume ratio is used for HF: NH4F∶H2O=3: 6: 10 buffered hydrofluoric acid solution corrodes Ti layer, the second electrical pumping window with
Electrode version photoetching is utilized between the second groove of arest neighbors on the metal level of table top and corrodes to form electric isolution ditch H, is formed simultaneously
P-type gate electrode 19 on the table top B of p-type top electrode 16 and second of vallum C upper surfaces.
Step 304, the N-type GaAs substrate lower surfaces for being thinned, polishing semiconductor epitaxial layers structured rear surface, directly in its following table
Face evaporation electrode formation n-type back electrode 1, finally carries out Alloying Treatment, ultimately forms the GaAs base band gate electrodes of PNPiN structures
Wide spectrum thyristor laser, the print cleavable of preparation is singulated dies, as shown in figure 11.
Preferably, the material for the n-type back electrode 1 that evaporation is formed can be Au, Ge, Ni/Au；Alloying Treatment condition is：
Under nitrogen and hydrogen shield, alloy 50s is to form n-type back electrode 1 at 450 DEG C.
Preferably, in the etching process of semiconductor epitaxial layer structure, laser reflection can be used on etching position
The methods such as rate measurement are monitored on-line, to monitor ICP etching process in real time, and the stop position of etching is judged in time.For example
It is monitored using laser reflectivity measuring apparatus, as etch period increases, the reflectivity of the semiconductor epitaxial layers monitored
Generation change in oscillation, reflectance curve peak valley number is corresponding with material thickness, so as to realize the monitoring and control to etching position.
The wide spectrum IGCT of the 1060nm wavelength InGaAs/GaAs base band gate electrodes prepared by the above method swashs
Light device can be using cleavage as the singulated dies of wide 300 μm 300 μm -2000 μm of chamber length.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention
Within the scope of.
Claims (12)
1. a kind of preparation method of wide spectrum thyristor laser, including：
S1, semiconductor epitaxial Rotating fields are prepared,
S2, on semiconductor epitaxial Rotating fields ridge strip structure is formed,
S3, prepare on ridge strip structure electrode and obtain described wide spectrum thyristor laser.
2. the preparation method of wide spectrum thyristor laser according to claim 1, it is characterised in that described step S1
In, semiconductor epitaxial Rotating fields are sequentially prepared from bottom to top：Lower N-type region, i types area, lower p type island region, upper p type island region, described lower N-type
Area includes successively from bottom to top：N-type GaAs substrates, n-GaAs cushions, n-AlGaAs cap rocks；Described i types area is from bottom to top
Also include successively：I-AlGaAs lower limit layers, i-GaAs lower waveguide layers, the upper ducting layers of i-GaAs, i-AlGaAs upper limiting layers；Institute
The lower p type island region stated includes successively from bottom to top：P-type gate electrode contact layer, i-GaAs walls；Described upper p type island region from lower and
On include successively：P-AlGaAs cap rocks, p-GaAs contact layers.
3. the preparation method of wide spectrum thyristor laser according to claim 2, it is characterised in that in described i types
Quantum well active district is formed between ducting layer and i-GaAs lower waveguide layers on the i-GaAs in area, for producing laser.
4. the preparation method of wide spectrum thyristor laser according to claim 2, it is characterised in that in semiconductor epitaxial
Upper N-type region is formed on the lower p type island region of Rotating fields, described upper N-type region includes：N-AlGaAs gradual transitions layer, described upper N-type
Area is located between upper p type island region and lower p type island region, to form PNPiN basic structures.
5. the preparation method of wide spectrum thyristor laser according to claim 4, it is characterised in that in described upper N
GaAs tunnel knots are formed between type area and lower p type island region, described GaAs tunnel knots include heavily-doped p-type layer and are formed at heavy doping
Highly doped n-type layer in p-type layer, the heavily-doped p-type layer is formed on the i-GaAs walls, belongs to described lower p-type
Area；The highly doped n-type layer is located at n-AlGaAs gradual transitions layer lower section, belongs to N-type region.
6. the preparation method of wide spectrum thyristor laser according to claim 1, it is characterised in that in described step
In S2, the upper p type island region surface of the semiconductor epitaxial Rotating fields is performed etching to form ridge strip structure, described ridge strip structure
Including vallum and it is formed at the first table top and the second table top of vallum both sides, described ridge depth and upper p type island region, upper N-type
The thickness sum of the p-type gate electrode contact layer of area and lower p type island region is equal.
7. the preparation method of wide spectrum thyristor laser according to claim 6, it is characterised in that to vallum both sides
First table top and the second table top perform etching to form first groove and second groove, described first groove and the bottom of second groove
Portion is located in the i-AlGaAs upper limiting layers in the i types area.
8. the preparation method of wide spectrum thyristor laser according to claim 7, it is characterised in that in described step
In S3, a layer insulating is formed on the ridge strip structure surface for forming first groove and second groove, for being electrically isolated.
9. the preparation method of wide spectrum thyristor laser according to claim 8, it is characterised in that with insulating barrier
Ridge strip structure on, vallum upper surface formed the first electrical pumping window, the second electrical pumping window is formed on the second table top.
10. the preparation method of wide spectrum thyristor laser according to claim 9, it is characterised in that forming first
The ridge strip structure upper surface with double ditch structures and insulating barrier of electrical pumping window and the second electrical pumping window, utilizes sputtering or steaming
Hair technique prepares metal level, for forming metal electrode.
11. the preparation method of wide spectrum thyristor laser according to claim 10, it is characterised in that noted to the second electricity
The metal level for entering table top between window and the second groove of arest neighbors performs etching to form an electric isolution ditch, the electric isolution ditch
Depth is equal to the thickness of metal level, for forming metal electrode：Positioned at the p-type top electrode of the first electrical pumping window and positioned at second
The p-type gate electrode of electrical pumping window.
12. the preparation method of wide spectrum thyristor laser according to claim 11, it is characterised in that in described tool
The semiconductor epitaxial layers structured rear surface of standby ridge strip structure, i.e. one layer of n-type back electrode of n-type GaAs substrates lower surface formation.
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Cited By (2)
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| CN111095701A (en) * | 2017-11-22 | 2020-05-01 | 富士施乐株式会社 | Light emitting member, print head, image forming apparatus, and light irradiation apparatus |
| RU2726382C1 (en) * | 2019-12-26 | 2020-07-13 | Акционерное общество "НИИ "Полюс" им. М.Ф. Стельмаха" (АО "НИИ "Полюс" им. М.Ф. Стельмаха") | Thyristor laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| RU209746U1 (en) * | 2021-11-19 | 2022-03-22 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" (НовГУ) | Magnetoelectric thyristor |
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