CN111146689A - FP (Fabry-Perot) cavity GaN-based laser and manufacturing method thereof - Google Patents
FP (Fabry-Perot) cavity GaN-based laser and manufacturing method thereof Download PDFInfo
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- CN111146689A CN111146689A CN201911394479.0A CN201911394479A CN111146689A CN 111146689 A CN111146689 A CN 111146689A CN 201911394479 A CN201911394479 A CN 201911394479A CN 111146689 A CN111146689 A CN 111146689A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
Abstract
The invention discloses an FP (Fabry-Perot) cavity GaN-based laser and a manufacturing method thereof. The p-type surface of the laser is a flat surface without a ridge structure, the epitaxial structure of the laser comprises a first limiting layer, a first waveguide layer, a quantum well layer, a second waveguide layer, an electronic barrier layer, a second limiting layer and a contact layer which are sequentially arranged in a laminated mode, and the second waveguide layer comprises a light emitting area and high-resistance areas distributed on two sides of the light emitting area. The p-type electrode of the FP-cavity GaN-based laser completely covers the p-type contact layer, so that the p-type ohmic contact area is increased, the current conduction path is increased, the p-type contact resistance and the body resistance are reduced, and the working voltage is further reduced.
Description
Technical Field
The invention relates to a semiconductor laser, in particular to an FP (Fabry-Perot) cavity GaN-based laser and a manufacturing method thereof, belonging to the technical field of semiconductors.
Background
In recent years, blue Lasers (LDs) based on GaN material systems have made significant progress with advances in material quality, fabrication processes, and the like. Lasers with high electro-optic conversion efficiency and long lifetime are needed in many applications such as laser storage, laser display, and fiber coupling. A commonly used laser structure is a ridge structure (as shown in fig. 1), and the confinement of lateral current and optical field is achieved by dry etching and depositing an insulating dielectric film. However, the p-type surface of the structure is an uneven surface with a ridge structure, so that flip-chip packaging is not easy to realize, and the thermal resistance is high. Meanwhile, after etching, the lateral direction has obvious refractive index difference, and the refractive index guiding laser can realize fundamental mode output only when the ridge stripe width is 2 microns generally, so that the ridge waveguide laser cannot easily realize high-power fundamental mode output.
Disclosure of Invention
The invention mainly aims to provide an FP (Fabry-Perot) cavity GaN-based laser and a manufacturing method thereof, and further overcomes the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides an FP (Fabry-Perot) cavity GaN-based laser, and the p-type surface of the laser is a flat surface without a ridge structure.
Furthermore, the epitaxial structure of the laser comprises a first limiting layer, a first waveguide layer, a quantum well layer, a second waveguide layer, an electronic barrier layer, a second limiting layer and a contact layer which are sequentially stacked, wherein the second waveguide layer comprises a light emitting region and high-resistance regions distributed on two sides of the light emitting region.
Furthermore, the high-resistance region is formed by performing ion implantation on regions distributed on two sides of the light emitting region in the second waveguide layer.
Furthermore, the ions used for the ion implantation include, but are not limited to, H ions, He ions, Be ions, B ions, N ions, Ar ions, and Al ions; the ions to be implanted may be one or a combination of two or more types, and may be implanted once or more times.
Further, the surface of the second waveguide layer is a flat surface without a ridge structure, and the surfaces of the electron blocking layer, the second confinement layer and the contact layer, which are sequentially formed on the second waveguide layer, are also flat surfaces without a ridge structure.
Furthermore, the FP-cavity GaN-based laser also comprises a substrate, and the epitaxial structure is formed on the substrate.
The embodiment of the invention also provides an FP (Fabry-Perot) cavity GaN-based laser, which comprises an epitaxial structure and an electrode matched with the epitaxial structure; the epitaxial structure comprises an n-AlGaN limiting layer, an n- (In) GaN waveguide layer, an InGaN/GaN quantum well layer, a p- (In) GaN waveguide layer, a p-AlGaN electronic barrier layer, a p-AlGaN limiting layer and a p- (In) GaN contact layer which are sequentially stacked; the p- (In) GaN waveguide layer comprises a light emitting region and high-resistance regions distributed on two sides of the light emitting region; and the p-type surface of the laser is a flat surface without ridge-type structures.
Further, the high-resistance region is formed by performing ion implantation on regions distributed on both sides of the light emitting region In the p- (In) GaN waveguide layer.
Preferably, the ions used for the ion implantation include, but are not limited to, H ions, He ions, Be ions, B ions, N ions, Ar ions, and Al ions.
Further, the InGaN/GaN quantum well layer includes 1-5, preferably two, pairs of InGaN/GaN quantum wells.
Further, the epitaxial structure is disposed on a substrate.
Preferably, the substrate comprises a GaN free standing substrate.
Further, the electrodes comprise a p electrode and an n electrode which are matched with two ends of the epitaxial structure respectively, and the p electrode completely covers the p- (In) GaN contact layer.
The embodiment of the invention also provides a manufacturing method of the FP cavity GaN-based laser, which comprises the following steps:
sequentially manufacturing a first laminated limiting layer, a first waveguide layer, a quantum well layer and a second waveguide layer on a substrate;
setting a mask in a local area of the second waveguide layer, and then processing the second waveguide layer in an ion implantation mode to enable a light emitting area and a high resistance area to be formed in an area covered by the mask and an area uncovered by the mask in the second waveguide layer respectively;
forming an electron blocking layer, a second limiting layer and a contact layer on the second waveguide layer in sequence to obtain an epitaxial structure;
manufacturing a p electrode and an n electrode which are matched with the epitaxial structure; preferably, the mask is a photoresist mask.
Compared with the prior art, the p-type surface of the FP-cavity GaN-based laser provided by the embodiment of the invention is a flat surface without a ridge structure, the light emitting region and the p-type contact layers above the two sides of the light emitting region can form good p-type ohmic contact with the p-type electrode, so that compared with a ridge waveguide laser, the p-type ohmic contact area is increased, and a current conduction path is increased in the p-type electron blocking layer and the p-type limiting layer, so that the p-type contact resistance and the body resistance are reduced, and the working voltage is further reduced; the p-type surface of the FP-cavity GaN-based laser provided by the embodiment of the invention is a flat surface without a ridge structure, is suitable for flip-chip packaging, and can reduce thermal resistance and improve power conversion efficiency; in addition, the FP-cavity GaN-based laser provided by the embodiment of the invention is a gain guide type laser, has no obvious refractive index difference in the lateral direction, and can realize high-power fundamental mode output when a light emitting region is wide.
Drawings
FIG. 1 is a schematic diagram of a ridge waveguide laser in the prior art;
FIG. 2 is a schematic diagram of a FP-cavity GaN-based laser according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of the epitaxial structure formed in step 1) of the method for fabricating an FP-cavity GaN-based laser according to an exemplary embodiment of the present invention;
FIG. 4 is a schematic cross-sectional structure diagram of a FP-cavity GaN-based laser manufacturing method according to an exemplary embodiment of the invention, in which a mask is set in step 2) and ion implantation is performed;
FIG. 5 is a schematic cross-sectional view of an epitaxial structure after stripping a mask in step 3) of a method for fabricating an FP-cavity GaN-based laser according to an exemplary embodiment of the invention;
FIG. 6 is a schematic cross-sectional view of the epitaxial structure formed in step 4) of the method for fabricating an FP-cavity GaN-based laser according to an exemplary embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of a P electrode deposited in step 5) of a method for fabricating an FP-cavity GaN-based laser according to an exemplary embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of an FP-cavity GaN-based laser fabricated according to an exemplary embodiment of the present invention after an n-electrode is deposited in step 6);
fig. 9 is a distribution diagram of high-resistance region implanted ions of a FP cavity GaN-based laser according to an exemplary embodiment of the present invention.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
Interpretation of terms:
ion implantation: when an ion beam is emitted to a solid material in vacuum, the ion beam is collided by the solid material and the speed of the ion beam is slowly reduced, and the ion beam finally stays in the solid material.
FP Cavity GaN base laser: the epitaxial structure of the GaN-based laser prepared by the method grows along the direction of the C surface of GaN, an FP cavity refers to mutually parallel resonant cavity surfaces which are cleaved along the m surface of the GaN, low-reflectivity and high-reflectivity dielectric films are respectively plated on the front cavity surface and the rear cavity surface, laser oscillates back and forth in the resonant cavity for multiple times, and then when the gain is larger than the loss, the laser is emitted from the front cavity surface.
The p-type surface of the ion implantation laser provided by the embodiment of the invention is a flat surface without a ridge structure, and the light emitting region and the p-type contact layers above the two sides of the light emitting region can form good p-type ohmic contact with the p-type electrode; meanwhile, the p-type surface is a flat surface without a ridge structure, is suitable for flip-chip packaging, can reduce thermal resistance and improve power conversion efficiency; in addition, the ion implantation laser is a gain guide laser, has no obvious refractive index difference in the lateral direction, and can realize high-power fundamental mode output when a light emitting region is wide.
When ion implantation is performed, appropriate implantation energy and implantation dose can be determined according to the thickness of the laser structure and implanted ions, and the implantation energy determines the implantation depth: the injection is too deep, the damage to the device is too large, the optical absorption is more, and the slope efficiency of the laser is influenced; the injection is too shallow, the electrical limitation is insufficient, the current expansion is easy to occur, the threshold current is influenced, the injection dosage determines the ion number under a certain depth, and the resistance of the high-resistance region is influenced.
Referring to fig. 1, an epitaxial structure of an FP cavity GaN-based laser according to an embodiment of the present invention includes, from bottom to top, a GaN self-supporting substrate, an n-AlGaN confinement layer, an n- (In) GaN waveguide layer, 2 pairs of InGaN/GaN quantum wells, a p- (In) GaN waveguide layer, a p-AlGaN electron blocking layer, a p-AlGaN confinement layer, and a p- (In) GaN contact layer.
Specifically, as shown In fig. 9, the p- (In) GaN waveguide layer includes a light emitting region and high-resistance regions distributed on two sides of the light emitting region, and the high-resistance regions and the light emitting region are integrally disposed, where the high-resistance regions are formed by ion implantation In regions on two sides of the light emitting region In the second waveguide layer, and the depth of the peak concentration of the ions implanted In the high-resistance regions of the second waveguide layer is set In the middle of the p- (In) GaN waveguide layer.
Specifically, the current conduction path in the second waveguide layer is funnel-shaped.
Specifically, in an exemplary embodiment of the present invention, a method for manufacturing a FP cavity GaN-based laser includes:
1) as shown In fig. 3, an n-AlGaN limiting layer, an n- (In) GaN waveguide layer, 2 pairs of InGaN/GaN quantum wells and a p- (In) GaN waveguide layer are sequentially stacked and formed on a GaN self-supporting substrate by MOCVD epitaxy;
2) as shown In fig. 4, the temperature is reduced to room temperature, a mask (ion implantation blocking layer) is arranged on a selected area on the surface of the p- (In) GaN waveguide layer, a ridge pattern is photoetched, then low-energy ion implantation is carried out on the p- (In) GaN waveguide layer, so that the p- (In) GaN waveguide layer which is not covered by the mask forms a high-resistance area due to the implanted ions, and the p- (In) GaN waveguide layer which is covered by the mask forms a light emitting area; the mask comprises photoresist, the photoresist comprises AZ6112, AZ5214, AZ6130, AZ4620 and the like, the selection of the photoresist needs to be matched with the depth of implanted ions, and the quantum well region under the p- (In) GaN waveguide layer covered by the ion-implanted photoresist is prevented from damaging a light emitting region; the implanted ions include but are not limited to H ions, He ions, Be ions, B ions, N ions, Ar ions and Al ions, proper implantation energy is selected according to different energy required by different ions implanted into the same depth of a GaN-based material system, and meanwhile, the depth of the peak concentration of the implanted ions is arranged In the middle of a p- (In) GaN waveguide layer according to the different thicknesses of all epitaxial layers of a laser, so that the good current limiting effect can Be ensured, and the quantum well can Be prevented from being seriously damaged;
3) as shown in fig. 5, the mask is removed by a stripping process, and the epitaxial wafer surface is ensured to be clean and free of photoresist residue by atomic microscope observation, and the growth of the laser epitaxial structure is continued;
4) as shown In fig. 6, a p-AlGaN electron blocking layer, a p-AlGaN limiting layer and a p- (In) GaN contact layer are sequentially formed on the p- (In) GaN waveguide layer by MOCVD epitaxy, thereby completing the formation of an epitaxial structure;
5) as shown In fig. 7, cooling to room temperature, and depositing a p-type electrode on the p- (In) GaN contact layer;
6) as shown in fig. 8, the back GaN substrate is thinned, ground, polished, and cleaned, and then an n-type electrode is deposited on the back side of the GaN substrate.
In a typical embodiment of the invention, an ion injection region (namely, the high-resistance region) of the FP-cavity GaN-based laser is mainly below a p- (In) GaN waveguide layer, and after injection, the high-resistance regions are formed at two sides of a light emitting region, so that a carrier is well electrically controlled, but lattice damage is not generated on an upper p-AlGaN electron blocking layer, a p-AlGaN limiting layer and a p- (In) GaN contact layer; meanwhile, the p-type surface is a flat surface without a ridge structure, so that flip packaging is easy, thermal resistance can be reduced, and power conversion efficiency is improved.
In addition, ions injected into the FP-cavity GaN-based laser in a typical embodiment of the invention can realize good electrical limitation on two sides of a light emitting region, no etching damage is introduced compared with a ridge structure, no obvious current expansion effect is caused on two sides of the light emitting region, the threshold current density can be reduced, and the width of the light emitting region is basically consistent with that of the designed light emitting region.
In addition, the ion injection type laser is a gain guide type laser, no obvious refractive index difference exists on two sides of a light emitting area, the gain of the light emitting area of the gain guide type laser is increased along with the increase of injection current, a fundamental mode and a high-order mode exist simultaneously, but the mode gain and the mode loss of the gain guide type laser are different due to the difference of limiting factors, so that the lasing conditions are different, the optical field distribution of the fundamental mode mainly exists right below the light emitting area, the fundamental mode gain is large, the loss is small, and the lasing is easier; the center of the light field of the high-order mode is far away from the center of the light emitting area, so that the high-order mode has small gain and large loss, and can be excited when the gain is larger than the loss, so that the high-order mode is not easy to appear, and the ion implantation gain guided laser is easy to prepare a high-power wide light emitting area fundamental mode laser.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (12)
1. A GaN-based laser with FP (Fabry-Perot) cavity is characterized in that: the p-type surface of the laser is a flat surface without ridge-type structures.
2. The FP cavity GaN-based laser of claim 1, wherein: the epitaxial structure of the laser comprises a first limiting layer, a first waveguide layer, a quantum well layer, a second waveguide layer, an electronic barrier layer, a second limiting layer and a contact layer which are sequentially arranged in a laminated mode, wherein the second waveguide layer comprises a light emitting region and high-resistance regions distributed on two sides of the light emitting region.
3. The FP cavity GaN-based laser of claim 2, wherein: the high-resistance region is formed by performing ion implantation on regions distributed on two sides of the light emitting region in the second waveguide layer.
4. The FP cavity GaN-based laser of claim 3, wherein: the ions adopted by the ion implantation comprise H ions, He ions, Be ions, B ions, N ions, Ar ions and Al ions.
5. The FP cavity GaN-based laser of claim 2, wherein: the surface of the second waveguide layer is a flat surface without a ridge structure, and the surfaces of the electron blocking layer, the second limiting layer and the contact layer which are sequentially formed on the second waveguide layer are also flat surfaces without a ridge structure.
6. The FP cavity GaN-based laser according to claim 2, further comprising a substrate on which the epitaxial structure is formed.
7. An FP (Fabry-Perot) cavity GaN-based laser comprises an epitaxial structure and an electrode matched with the epitaxial structure; the method is characterized in that: the epitaxial structure comprises an n-AlGaN limiting layer, an n- (In) GaN waveguide layer, an InGaN/GaN quantum well layer, a p- (In) GaN waveguide layer, a p-AlGaN electronic barrier layer, a p-AlGaN limiting layer and a p- (In) GaN contact layer which are sequentially stacked; the p- (In) GaN waveguide layer comprises a light emitting region and high-resistance regions distributed on two sides of the light emitting region; and the p-type surface of the laser is a flat surface without ridge-type structures.
8. The FP cavity GaN-based laser of claim 7, wherein: the high-resistance region is formed by performing ion implantation on regions distributed at two sides of the light emitting region In the p- (In) GaN waveguide layer; preferably, the ions used for ion implantation include H ions, He ions, Be ions, B ions, N ions, Ar ions, and Al ions.
9. The FP cavity GaN-based laser of claim 7, wherein: the InGaN/GaN quantum well layer includes 1-5 pairs of InGaN/GaN quantum wells.
10. The FP cavity GaN-based laser of claim 7, wherein: the epitaxial structure is disposed on a substrate, preferably the substrate comprises a GaN free-standing substrate.
11. The FP cavity GaN-based laser of claim 7, wherein: the electrodes comprise a p electrode and an n electrode which are respectively matched with two ends of the epitaxial structure, and the p electrode completely covers the p- (In) GaN contact layer.
12. The method for fabricating the FP cavity GaN-based laser as claimed in any of claims 1 to 6, comprising:
sequentially manufacturing a first laminated limiting layer, a first waveguide layer, a quantum well layer and a second waveguide layer on a substrate;
setting a mask in a local area of the second waveguide layer, and then processing the second waveguide layer in an ion implantation mode to enable a light emitting area and a high resistance area to be formed in an area covered by the mask and an area uncovered by the mask in the second waveguide layer respectively;
forming an electron blocking layer, a second limiting layer and a contact layer on the second waveguide layer in sequence to obtain an epitaxial structure;
manufacturing a p electrode and an n electrode which are matched with the epitaxial structure; preferably, the mask is a photoresist mask.
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| CN112787217A (en) * | 2021-02-05 | 2021-05-11 | 中国工程物理研究院应用电子学研究所 | Wavelength-locked high-efficiency semiconductor laser and preparation method thereof |
| CN113013728A (en) * | 2021-02-26 | 2021-06-22 | 武汉仟目激光有限公司 | Vertical cavity surface emitting laser and ion implantation method |
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| CN113013728A (en) * | 2021-02-26 | 2021-06-22 | 武汉仟目激光有限公司 | Vertical cavity surface emitting laser and ion implantation method |
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