CN102299480A - Manufacturing method for semiconductor laser - Google Patents
Manufacturing method for semiconductor laser Download PDFInfo
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- CN102299480A CN102299480A CN2011101982687A CN201110198268A CN102299480A CN 102299480 A CN102299480 A CN 102299480A CN 2011101982687 A CN2011101982687 A CN 2011101982687A CN 201110198268 A CN201110198268 A CN 201110198268A CN 102299480 A CN102299480 A CN 102299480A
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Abstract
The invention relates to the semiconductor laser technology, in particular to a manufacturing method for a semiconductor laser, which comprises the following steps of: etching a ridge type region (2) on the surface of a laser epitaxial wafer; injecting ions near the front cavity surface and the back cavity surface of the laser through the photoetching technology; then, carrying out fast annealing at 500 to 1200 DEG C in protection atmosphere; subsequently, evaporating a P-type contact electrode (5) above the ridge type region (2) of the laser; thinning a substrate of the laser and then evaporating an N-type contact electrode (8); obtaining a laser bar after the cleavage; respectively evaporating or depositing an antireflection film (6) and a high reflecting film (7) on the front cavity surface and the back cavity surface of the laser bar; and finally carrying out cutting or cleavage on the laser bar to complete the manufacture of the single laser. The method has the advantages that the light absorption at the cavity surface parts can be effectively reduced, the light power density at the cavity surface parts is reduced, and the maximum output power of the laser is effectively enhanced.
Description
Technical field
The present invention relates to semiconductor laser technology, especially a kind of manufacture method of semiconductor laser.
Background technology
Semiconductor laser is owing to make simply, and volume is little, and is in light weight, and the life-span is long, and efficient is high, is used widely in fields such as optical communication, optical pumping, optical storage and laser displaies.And the power output of semiconductor laser is less than normal at present, has limited the application of semiconductor laser, and therefore, industry is devoted to improve the power output of semiconductor laser always.The subject matter that present high power semiconductor lasers faces is the serious heating under big electric current injects and catastrophic optical damage damage (COD) threshold value that how to improve device.
The catastrophic optical damage damage is the generation of overflowing by heat, generally occurs in the chamber face of semiconductor laser.Films on cavity surfaces of semiconductor lasers is separated and is comprehended in chamber face place generation defective.At close face place, chamber, optical power density is higher, defect concentration is bigger, defective will produce surface light absorption and non-radiative compound, and light absorption and non-radiative compound meeting produce heat, and the chamber surface temperature is raise, cause near the localized heat of the material band gap of chamber face to shrink simultaneously, and light absorption and non-radiative compound meeting aggravate along with the rising of temperature, form a positive feedback process, thereby cause the generation of catastrophic optical damage.Therefore the catastrophic optical damage damage threshold power that improves high power semiconductor lasers is link very important in the high power semiconductor lasers production technology.
In order to improve the catastrophic optical damage damage threshold of laser, common in the world way is, at GaAs base and InP base laser chamber face deposition one deck passivation layer, as Ga
2O
3Si, ZnSe etc., and then laser cavity surface carried out plated film, and to the direct plated film of chamber face of GaN base laser, this method is not removed the cleavage laser device and the defective that produces, and the chamber face of laser still has many outstanding keys, the optical power density at laser cavity surface place is very big simultaneously, and the chamber face that can not effectively reduce laser absorbs.
Summary of the invention
In order to overcome the above problems, the present invention adopts at laser cavity surface and introduces ion implanted region, avoided laser cavity surface to contact, adopted plated film to reduce the method for the optical power density at laser cavity surface place simultaneously, increased the power output of laser with the direct of deielectric-coating.
The manufacture method of this semiconductor laser is characterized in that comprising the steps:
(1) goes out the ridge district in laser epitaxial wafer surface etch;
(2) utilize lithographic technique, near the preceding rear facet of laser, inject ion, form ion implanted region by ion implantor;
(3) under 500～1200 ℃, protective atmosphere, carry out short annealing then;
(4) evaporation or deposition one deck separator on the laser epitaxial wafer;
(5) in conjunction with lithographic technique, evaporation P type contact electrode above described ridge district;
(6) adopt the method for etching and evaporation above the ridge district, to form the P type and add thick electrode;
(7) to the substrate thinning of laser epitaxial wafer, evaporation N type contact electrode on described substrate then;
(8) obtain laser bar bar after the cleavage;
(9) at laser bar bar front facet and rear facet difference evaporation or deposition anti-reflection film and high-reflecting film;
(10) at last laser bar bar is cut apart or cleavage, finished the making of single laser.
Wherein, described injection ion is a kind of of aluminium ion, zinc ion, boron ion or oxonium ion.
Described injection energy of ions is 100keV, and it is 4.1 * 10 that ion injects flow
21Cm
-2Owing to adopt the chamber face to inject ion, increased near the energy gap of the active area face of chamber, reduced near the outstanding key the laser cavity surface and reduced the absorption of chamber in the face of light.
Described separator is SiO
2, TiO
2, ZrO
2, AlN, Al
2O
3In a kind of.This separator can play and shelter, the effect of localised protection.
Described protective atmosphere is to be formed by a kind of gas in nitrogen, argon gas, helium or the oxygen.Be the stability of protection laser epitaxial layer under hot environment, need under the scope of specific gas protection, carry out.
Described anti-reflection film is that the single thin film of 1/4 emergent light wavelength is formed by optical thickness.
Described high-reflecting film is alternately overlapped to form eight layers film combinations by two kinds of films; Ground floor optical thickness of thin film described and that rear facet directly links to each other is 1/2 emergent light wavelength, and all the other seven layer film optical thicknesses are 1/4 emergent light wavelength.
The manufacturing materials of described anti-reflection film or high-reflecting film is SiO
2, TiO
2, ZrO
2Or Al
2O
3In at least a.By adjusting anti-reflection film or the high-reflecting film composition material and the film number of plies, can obtain required optical effect.
Beneficial effect of the present invention is: inject the light absorption that ion can reduce face place, chamber at laser cavity surface, owing to adopt the chamber face to inject ion, active area has a thin layer near the face of chamber, be non-uptake zone, the interface of this thin layer and active area forms naturally, is not to form by cleavage, therefore the destruction to laser cavity surface of having avoided cleavage to cause, reduced near the outstanding key of laser cavity surface, and the damage that the ion injection causes can be eliminated by high temperature rapid thermal annealing.Can reduce the optical power density at laser cavity surface place in addition by the film of design, therefore this method temperature rising that can greatly reduce the light absorption at face place, chamber and cause thus, reduce the lasing threshold current density of laser, improve the chamber face catastrophic optical damage damage threshold of semiconductor laser, improve the power output and the reliability of laser.
Description of drawings
Fig. 1 is the implementing procedure figure of technical scheme provided by the invention.
Fig. 2 is the used photolithography plate schematic diagram in the ridge district of etching laser.
Fig. 3 is the semiconductor laser epitaxial wafer that is provided with ion implanted region.
Fig. 4 is a laser bar bar profile.
Fig. 5 is a laser bar bar vertical view.
Fig. 6 is the stereogram of single chip of laser.
Fig. 7 is near the optical power distribution figure the face of chip of laser of the present invention chamber.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer,, and come the present invention is further described with reference to accompanying drawing below in conjunction with instantiation.
Present embodiment adopts 450nm blue light ridge GaN base laser.Laser active area 1 is the InGaN/GaN Multiple Quantum Well, and electric current is injected by ridge district 2.The concrete operations flow chart is referring to Fig. 1, and implementation step comprises:
(1) adopts optical etching technology, make mask with photoresist, adopt photolithography plate as shown in Figure 2, on the laser epitaxial wafer, utilize ion beam etching to go out the ridge district 2 of laser, as shown in Figure 4.Different lasers, ridge district 2 width differences, general range is 1-200 μ m, the width in ridge district 2 is 5 μ m in the present embodiment.
(2) adopt optical etching technology, near the preceding rear facet of laser, make mask with photoresist,, near the preceding rear facet of laser, inject ion from direction perpendicular to laser emitting chamber face by ion implantor, as shown in Figure 3, near the rear facet ion implanted region 3 is arranged all before the laser.Present embodiment adopts the Al ion to inject ion as target, and regulating injection Al energy of ions is 100keV, makes near face active area 1 material in chamber be grown to AlGaN/AlInGaN gradually, and the injection flow of regulating the Al ion is 4.1 * 10
21Cm
-2, making the Al ion inject the degree of depth in face zone, chamber is 0.2 μ m, is evenly distributed, and makes ion implanted region 3 become Al
0.1Ga
0.9N, the quantity that promptly injects the Al atom be original N atom number 10%, finish ion and inject.The injection of Al ion, the energy gap that forms AlGaN has increased 0.28eV, and the energy gap of AlInGaN increases greater than 0.28eV, therefore, chamber face place material is very little to the absorption of outgoing light wave, absorbs hardly, therefore, the catastrophic optical damage damage threshold of laser is greatly enhanced.
But this moment, the injection of ion can make that laser sustains damage, and therefore must inject the damage that causes to repair through high-temperature annealing process.Promptly ion inject finish after, under 500～1200 ℃, the condition of nitrogen protection, carry out short annealing, obtain near the face of chamber laser epitaxial wafer for the ion implanted region 3 of AlGaN/AlInGaN.
(3) evaporation or deposition one deck separator 4 on the laser epitaxial wafer then.Adopt SiO in the present embodiment
2Deielectric-coating can also adopt other deielectric-coating to do equal the replacement in different embodiment as separator 4, and this equal replacement all should fall in the protection range of the present invention.
(4) on described separator 4, form the photoresist mask, adopt optical etching technology to remove the separator 4 of 2 tops, laser ridge district, evaporation P type contact electrode 5 above described ridge district 2 then, present embodiment adopts Ni/Au to make, as shown in Figure 4.
(5) at the SiO of remainder
2On the P type contact electrode 5 of separator 4 and 2 tops, ridge district, adopt the P type of the method formation laser of photoetching and evaporation metal electrode to add thick electrode 9, the manufacturing materials that this P type adds thick electrode 9 is Ti/Au.The effect that the P type adds thick electrode 9 is for heat radiation that improves the laser p type island region and the ridge district 2 that protects laser.
(6) employing mask or attenuate machine method are carried out attenuate to the GaN substrate of laser epitaxial wafer, be thinned to 100 μ m, evaporation N type contact electrode 8 on described substrate then, the manufacturing materials of this N type contact electrode 8 is Ti/Al/Ti/Au, cooperates with P type electrode to form ohm and be connected.
(7) cleavage laser device epitaxial wafer obtains the bar bar of laser into strips, and its form is referring to Fig. 5.
(8) at laser bar bar front facet and rear facet evaporation or deposition anti-reflection film respectively, 6 and high-reflecting film 7.Present embodiment adopts at laser bar bar front facet evaporation anti-reflection film 6, and this anti-reflection film 6 is by individual layer SiO
2Film is formed, SiO
2The optical thickness of film is 1/4 λ.The rear facet evaporation high-reflecting film 7 of laser bar bar, this high-reflecting film 7 is by four couples of SiO
2/ TiO
2Film is formed, SiO
2Film and TiO
2Film alternately overlaps on the rear facet, two-layer TiO
2Between the film one deck SiO
2Film.The direct SiO of evaporation on rear facet
2The optical thickness of film is 1/2 λ, and every layer material optical thickness of evaporation is 1/4 λ subsequently.λ is the emergent light wavelength of GaN base laser, and λ is 450nm in the present embodiment, and rear facet has plated behind anti-reflection film 6 and the high-reflecting film 7 as shown in Figure 5 before the laser bar bar.
(9) at last laser bar bar is cut apart or cleavage, finished the making of single laser, this single laser stereochemical structure as shown in Figure 6; The profile of single ridge lasers chip is referring to as Fig. 4.
The optical power distribution of the laser rear facet after the above step process of process as shown in Figure 7, wherein carry out normalization with the luminous power in the air 10, because the method that adopts ion to inject is handled the preceding rear facet of laser, near active area 1 material of rear facet is AlGaN/AlInGaN before making, its energy gap all has increase, removed face place, the chamber defect concentration height that the defective that produces because of the cleavage laser device and outstanding key are brought, the chamber face absorbs problems such as serious.Adopt the plated film design simultaneously, the optical power density at chamber face place (d=0nm) reduces greatly, and therefore, the chamber face absorption of laser is inhibited and becomes very little, and the catastrophic optical damage damage threshold and the power output of laser will improve greatly.
Present embodiment adopts 450nm blue light ridge GaN base laser.Laser active area 1 is the InGaN/GaN Multiple Quantum Well, and electric current is injected by ridge district 2.The concrete operations flow chart is referring to Fig. 1, and implementation step comprises:
(1) adopts optical etching technology, make mask with photoresist, adopt photolithography plate as shown in Figure 2, on the laser epitaxial wafer, utilize ion beam etching to go out the ridge district 2 of laser, as shown in Figure 4.Different lasers, ridge district 2 width differences, general range is 1-200 μ m, the width in ridge district 2 is 5 μ m in the present embodiment.
(2) adopt optical etching technology, near the preceding rear facet of laser, make mask with photoresist,, near the preceding rear facet of laser, inject ion from direction perpendicular to laser emitting chamber face by ion implantor, as shown in Figure 3, near the rear facet ion implanted region 3 is arranged all before the laser.Present embodiment adopts the B ion to inject ion as target, regulates injection B energy of ions and is about 100keV, and the injection flow of regulating the B ion is 4.1 * 10
21Cm
-2, make the B ion in face zone, chamber, inject the degree of depth and be about 0.2 μ m, be evenly distributed, the energy gap of active area materials is increased, and therefore, chamber face place material is very little to the absorption of outgoing light wave, absorb hardly, therefore, the catastrophic optical damage damage threshold of laser is greatly enhanced.
But this moment, the injection of ion can make that laser sustains damage, and therefore must inject the damage that causes to repair through high-temperature annealing process.Promptly ion inject finish after, under 500～1200 ℃, the condition of helium protection, carry out short annealing, obtain having near the face of chamber the laser epitaxial wafer of ion implanted region 3.
(3) evaporation or deposition one deck separator 4 on the laser epitaxial wafer then.Adopt TiO in the present embodiment
2Deielectric-coating is as separator 4.
(4) on described separator 4, form the photoresist mask, adopt optical etching technology to remove the separator 4 of 2 tops, laser ridge district, evaporation P type contact electrode 5 above described ridge district 2 then, present embodiment adopts Ni/Au to make, as shown in Figure 4.
(5) at the TiO of remainder
2On the P type contact electrode 5 of separator 4 and 2 tops, ridge district, adopt the P type of the method formation laser of photoetching and evaporation metal electrode to add thick electrode 9, the manufacturing materials that this P type adds thick electrode 9 is Ti/Au.The effect that the P type adds thick electrode 9 is for heat radiation that improves the laser p type island region and the ridge district 2 that protects laser.
(6) employing mask or attenuate machine method are carried out attenuate to the GaN substrate of laser epitaxial wafer, be thinned to 100 μ m, evaporation N type contact electrode 8 on described substrate then, the manufacturing materials of this N type contact electrode 8 is Ti/Al/Ti/Au, cooperates with P type electrode to form ohm and be connected.
(7) cleavage laser device epitaxial wafer obtains the bar bar of laser into strips, and its form is referring to Fig. 5.
(8) at laser bar bar front facet and rear facet evaporation or deposition anti-reflection film respectively, 6 and high-reflecting film 7.Present embodiment adopts at laser bar bar front facet evaporation anti-reflection film 6, and this anti-reflection film 6 is by Al
2O
3Film is formed, Al
2O
3The optical thickness of film is 1/4 λ.The rear facet evaporation high-reflecting film 7 of laser bar bar, this high-reflecting film 7 is by four couples of Al
2O
3/ ZrO
2Film is formed, Al
2O
3Film and ZrO
2Film alternately overlaps on the rear facet, two-layer ZrO
2Between the film one deck Al
2O
3Film.The direct Al of evaporation on rear facet
2O
3The optical thickness of film is 1/2 λ, and every layer material optical thickness of evaporation is 1/4 λ subsequently.λ is the emergent light wavelength of GaN base laser, and λ is 450nm in the present embodiment, and rear facet has plated behind anti-reflection film 6 and the high-reflecting film 7 as shown in Figure 5 before the laser bar bar.
(9) at last laser bar bar is cut apart or cleavage, finished the making of single laser, this single laser stereochemical structure as shown in Figure 6; The profile of single ridge lasers chip is referring to as Fig. 4.
Present embodiment adopts 450nm blue light ridge GaN base laser.Laser active area 1 is the InGaN/GaN Multiple Quantum Well, and electric current is injected by ridge district 2.The concrete operations flow chart is referring to Fig. 1, and implementation step comprises:
(1) adopts optical etching technology, make mask with photoresist, adopt photolithography plate as shown in Figure 2, on the laser epitaxial wafer, utilize ion beam etching to go out the ridge district 2 of laser, as shown in Figure 4.Different lasers, ridge district 2 width differences, general range is 1-200 μ m, the width in ridge district 2 is 5 μ m in the present embodiment.
(2) adopt optical etching technology, near the preceding rear facet of laser, make mask with photoresist,, near the preceding rear facet of laser, inject ion from direction perpendicular to laser emitting chamber face by ion implantor, as shown in Figure 3, near the rear facet ion implanted region 3 is arranged all before the laser.Present embodiment adopts the Zn ion to inject ion as target, regulates injection Zn energy of ions and is about 100keV, and the injection flow of regulating the Zn ion is 4.1 * 10
21Cm
-2, make the Zn ion in face zone, chamber, inject the degree of depth and be about 0.2 μ m, be evenly distributed, the energy gap of active area materials is increased, and therefore, chamber face place material is very little to the absorption of outgoing light wave, absorb hardly, therefore, the catastrophic optical damage damage threshold of laser is greatly enhanced.
But this moment, the injection of ion can make that laser sustains damage, and therefore must inject the damage that causes to repair through high-temperature annealing process.Promptly ion inject finish after, under 500～1200 ℃, the condition of argon shield, carry out short annealing, obtain having near the face of chamber the laser epitaxial wafer of ion implanted region 3.
(3) evaporation or deposition one deck separator 4 on the laser epitaxial wafer then.Adopt ZrO in the present embodiment
2Deielectric-coating is as separator 4.
(4) on described separator 4, form the photoresist mask, adopt optical etching technology to remove the separator 4 of 2 tops, laser ridge district, evaporation P type contact electrode 5 above described ridge district 2 then, present embodiment adopts Ni/Au to make, as shown in Figure 4.
(5) at the ZrO of remainder
2On the P type contact electrode 5 of separator 4 and 2 tops, ridge district, adopt the P type of the method formation laser of photoetching and evaporation metal electrode to add thick electrode 9, the manufacturing materials that this P type adds thick electrode 9 is Ti/Au.The effect that the P type adds thick electrode 9 is for heat radiation that improves the laser p type island region and the ridge district 2 that protects laser.
(6) employing mask or attenuate machine method are carried out attenuate to the GaN substrate of laser epitaxial wafer, be thinned to 100 μ m, evaporation N type contact electrode 8 on described substrate then, the manufacturing materials of this N type contact electrode 8 is Ti/Al/Ti/Au, cooperates with P type electrode to form ohm and be connected.
(7) cleavage laser device epitaxial wafer obtains the bar bar of laser into strips, and its form is referring to Fig. 5.
(8) at laser bar bar front facet and rear facet evaporation or deposition anti-reflection film respectively, 6 and high-reflecting film 7.Present embodiment adopts at laser bar bar front facet evaporation anti-reflection film 6, and this anti-reflection film 6 is by Al
2O
3Film is formed, Al
2O
3The optical thickness of film is 1/4 λ.The rear facet evaporation high-reflecting film 7 of laser bar bar, this high-reflecting film 7 is by four couples of Al
2O
3/ ZrO
2Film is formed, Al
2O
3Film and ZrO
2Film alternately overlaps on the rear facet, two-layer ZrO
2Between the film one deck Al
2O
3Film.The direct Al of evaporation on rear facet
2O
3The optical thickness of film is 1/2 λ, and every layer material optical thickness of evaporation is 1/4 λ subsequently.λ is the emergent light wavelength of GaN base laser, and λ is 450nm in the present embodiment, and rear facet has plated behind anti-reflection film 6 and the high-reflecting film 7 as shown in Figure 5 before the laser bar bar.
(9) at last laser bar bar is cut apart or cleavage, finished the making of single laser, this single laser stereochemical structure as shown in Figure 6; The profile of single ridge lasers chip is referring to as Fig. 4.
Embodiment 4
Present embodiment adopts 450nm blue light ridge GaN base laser.Laser active area 1 is the InGaN/GaN Multiple Quantum Well, and electric current is injected by ridge district 2.The concrete operations flow chart is referring to Fig. 1, and implementation step comprises:
(1) adopts optical etching technology, make mask with photoresist, adopt photolithography plate as shown in Figure 2, on the laser epitaxial wafer, utilize ion beam etching to go out the ridge district 2 of laser, as shown in Figure 4.Different lasers, ridge district 2 width differences, general range is 1-200 μ m, the width in ridge district 2 is 5 μ m in the present embodiment.
(2) adopt optical etching technology, near the preceding rear facet of laser, make mask with photoresist,, near the preceding rear facet of laser, inject ion from direction perpendicular to laser emitting chamber face by ion implantor, as shown in Figure 3, near the rear facet ion implanted region 3 is arranged all before the laser.Present embodiment adopts oxonium ion to inject ion as target, regulates the energy that injects oxonium ion and is about 100keV, and the injection flow of regulating oxonium ion is 4.1 * 10
21Cm
-2, make oxonium ion in face zone, chamber, inject the degree of depth and be about 0.2 μ m, be evenly distributed, the energy gap of active area materials is increased, and therefore, chamber face place material is very little to the absorption of outgoing light wave, absorb hardly, therefore, the catastrophic optical damage damage threshold of laser is greatly enhanced.
But this moment, the injection of ion can make that laser sustains damage, and therefore must inject the damage that causes to repair through high-temperature annealing process.Promptly ion inject finish after, under 500～1200 ℃, the condition of oxygen protection, carry out short annealing, obtain having near the face of chamber the laser epitaxial wafer of ion implanted region 3.
(3) evaporation or deposition one deck separator 4 on the laser epitaxial wafer then.Adopt the AlN deielectric-coating as separator 4 in the present embodiment.
(4) on described separator 4, form the photoresist mask, adopt optical etching technology to remove the separator 4 of 2 tops, laser ridge district, evaporation P type contact electrode 5 above described ridge district 2 then, present embodiment adopts Ni/Au to make, as shown in Figure 4.
(5) on the P type contact electrode 5 above the AlN of remainder separator 4 and the ridge district 2, adopt the P type of the method formation laser of photoetching and evaporation metal electrode to add thick electrode 9, the manufacturing materials that this P type adds thick electrode 9 is Ti/Au.The effect that the P type adds thick electrode 9 is for heat radiation that improves the laser p type island region and the ridge district 2 that protects laser.
(6) employing mask or attenuate machine method are carried out attenuate to the GaN substrate of laser epitaxial wafer, be thinned to 100 μ m, evaporation N type contact electrode 8 on described substrate then, the manufacturing materials of this N type contact electrode 8 is Ti/Al/Ti/Au, cooperates with P type electrode to form ohm and be connected.
(7) cleavage laser device epitaxial wafer obtains the bar bar of laser into strips, and its form is referring to Fig. 5.
(8) at laser bar bar front facet and rear facet evaporation or deposition anti-reflection film respectively, 6 and high-reflecting film 7.Present embodiment adopts at laser bar bar front facet evaporation anti-reflection film 6, and this anti-reflection film 6 is by individual layer SiO
2Film is formed, SiO
2The optical thickness of film is 1/4 λ.The rear facet evaporation high-reflecting film 7 of laser bar bar, this high-reflecting film 7 is by four couples of SiO
2/ TiO
2Film is formed, SiO
2Film and TiO
2Film alternately overlaps on the rear facet, two-layer TiO
2Between the film one deck SiO
2Film.The direct SiO of evaporation on rear facet
2The optical thickness of film is 1/2 λ, and every layer material optical thickness of evaporation is 1/4 λ subsequently.λ is the emergent light wavelength of GaN base laser, and λ is 450nm in the present embodiment, and rear facet has plated behind anti-reflection film 6 and the high-reflecting film 7 as shown in Figure 5 before the laser bar bar.
(9) at last laser bar bar is cut apart or cleavage, finished the making of single laser, this single laser stereochemical structure as shown in Figure 6; The profile of single ridge lasers chip is referring to as Fig. 4.
Present embodiment adopts 450nm blue light ridge GaN base laser.Laser active area 1 is the InGaN/GaN Multiple Quantum Well, and electric current is injected by ridge district 2.The concrete operations flow chart is referring to Fig. 1, and implementation step comprises:
(1) adopts optical etching technology, make mask with photoresist, adopt photolithography plate as shown in Figure 2, on the laser epitaxial wafer, utilize ion beam etching to go out the ridge district 2 of laser, as shown in Figure 4.Different lasers, ridge district 2 width differences, general range is 1-200 μ m, the width in ridge district 2 is 5 μ m in the present embodiment.
(2) adopt optical etching technology, near the preceding rear facet of laser, make mask with photoresist,, near the preceding rear facet of laser, inject ion from direction perpendicular to laser emitting chamber face by ion implantor, as shown in Figure 3, near the rear facet ion implanted region 3 is arranged all before the laser.Present embodiment adopts the Zn ion to inject ion as target, regulates injection Zn energy of ions and is about 100keV, and the injection flow of regulating the Zn ion is 4.1 * 10
21Cm
-2, make the Zn ion in face zone, chamber, inject the degree of depth and be about 0.2 μ m, be evenly distributed, the energy gap of active area materials is increased, and therefore, chamber face place material is very little to the absorption of outgoing light wave, absorb hardly, therefore, the catastrophic optical damage damage threshold of laser is greatly enhanced.
But this moment, the injection of ion can make that laser sustains damage, and therefore must inject the damage that causes to repair through high-temperature annealing process.Promptly ion inject finish after, under 500～1200 ℃, the condition of nitrogen protection, carry out short annealing, obtain having near the face of chamber the laser epitaxial wafer of ion implanted region 3.
(3) evaporation or deposition one deck separator 4 on the laser epitaxial wafer then.Adopt Al in the present embodiment
2O
3Deielectric-coating is as separator 4.
(4) on described separator 4, form the photoresist mask, adopt optical etching technology to remove the separator 4 of 2 tops, laser ridge district, evaporation P type contact electrode 5 above described ridge district 2 then, present embodiment adopts Ni/Au to make, as shown in Figure 4.
(5) at the Al of remainder
2O
3On the P type contact electrode 5 of separator 4 and 2 tops, ridge district, adopt the P type of the method formation laser of photoetching and evaporation metal electrode to add thick electrode 9, the manufacturing materials that this P type adds thick electrode 9 is Ti/Au.The effect that the P type adds thick electrode 9 is for heat radiation that improves the laser p type island region and the ridge district 2 that protects laser.
(6) employing mask or attenuate machine method are carried out attenuate to the GaN substrate of laser epitaxial wafer, be thinned to 100 μ m, evaporation N type contact electrode 8 on described substrate then, the manufacturing materials of this N type contact electrode 8 is Ti/Al/Ti/Au, cooperates with P type electrode to form ohm and be connected.
(7) cleavage laser device epitaxial wafer obtains the bar bar of laser into strips, and its form is referring to Fig. 5.
(8) at laser bar bar front facet and rear facet evaporation or deposition anti-reflection film respectively, 6 and high-reflecting film 7.Present embodiment adopts at laser bar bar front facet evaporation anti-reflection film 6, and this anti-reflection film 6 is by individual layer SiO
2Film is formed, SiO
2The optical thickness of film is 1/4 λ.The rear facet evaporation high-reflecting film 7 of laser bar bar, this high-reflecting film 7 is by four couples of SiO
2/ TiO
2Film is formed, SiO
2Film and TiO
2Film alternately overlaps on the rear facet, two-layer TiO
2Between the film one deck SiO
2Film.The direct SiO of evaporation on rear facet
2The optical thickness of film is 1/2 λ, and every layer material optical thickness of evaporation is 1/4 λ subsequently.λ is the emergent light wavelength of GaN base laser, and λ is 450nm in the present embodiment, and rear facet has plated behind anti-reflection film 6 and the high-reflecting film 7 as shown in Figure 5 before the laser bar bar.
(9) at last laser bar bar is cut apart or cleavage, finished the making of single laser, this single laser stereochemical structure as shown in Figure 6; The profile of single ridge lasers chip is referring to as Fig. 4.
The optical power distribution of the laser rear facet after the above step process of process as shown in Figure 7, wherein carry out normalization with the luminous power in the air 10, because the method that adopts ion to inject is handled the preceding rear facet of laser, near the active area 1 material energy gap increase rear facet before making, removed face place, the chamber defect concentration height that the defective that produces because of the cleavage laser device and outstanding key are brought, the chamber face absorbs problems such as serious.Adopt the plated film design simultaneously, the optical power density at chamber face place (d=0nm) reduces greatly, and therefore, the chamber face absorption of laser is inhibited and becomes very little, and the catastrophic optical damage damage threshold and the power output of laser will improve greatly.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.For example, the manufacturing materials of anti-reflection film 6 or high-reflecting film 7 can also be Ta
2O
5, HfO
2, Si, MgF
2Or a kind of among the ZnS.
Claims (8)
1. the manufacture method of a semiconductor laser is characterized in that comprising the steps:
Step 1 goes out ridge district (2) in laser epitaxial wafer surface etch;
Step 2 is utilized lithographic technique, injects ion by ion implantor near the preceding rear facet of laser, forms ion implanted region (3);
Step 3 is carried out short annealing then under 500～1200 ℃, protective atmosphere;
Step 4, evaporation or deposition one deck separator (4) on the laser epitaxial wafer;
Step 5 is in conjunction with lithographic technique, at top, described ridge district (2) evaporation P type contact electrode (5);
Step 6 adopts the method for etching and evaporation to add thick electrode (9) in ridge district (2) top formation P type;
Step 7, to the substrate thinning of laser epitaxial wafer, evaporation N type contact electrode (8) on described substrate then;
Step 8 obtains laser bar bar after the cleavage;
Step 9 is at laser bar bar front facet and rear facet difference evaporation or deposition anti-reflection film (6) and high-reflecting film (7);
Step 10 is cut apart laser bar bar or cleavage at last, finishes the making of single laser.
2. the manufacture method of semiconductor laser according to claim 1 is characterized in that: injecting ion in the described ion implanted region (3) is a kind of of aluminium ion, zinc ion, boron ion or oxonium ion.
3. the manufacture method of semiconductor laser according to claim 1, it is characterized in that: described injection energy of ions is 100keV, it is 4.1 * 10 that ion injects flow
21Cm
-2
4. the manufacture method of semiconductor laser according to claim 1, it is characterized in that: described separator (4) is SiO
2, TiO
2, ZrO
2, AlN or Al
2O
3In a kind of.
5. the manufacture method of semiconductor laser according to claim 1, it is characterized in that: described protective atmosphere is to be formed by a kind of gas in nitrogen, argon gas, helium or the oxygen.
6. the manufacture method of semiconductor laser according to claim 1 is characterized in that: described anti-reflection film (6) is that the single thin film of 1/4 emergent light wavelength is formed by optical thickness.
7. the manufacture method of semiconductor laser according to claim 1, it is characterized in that: described high-reflecting film (7) is alternately overlapped to form eight layers film combinations by two kinds of films; Ground floor optical thickness of thin film described and that rear facet directly links to each other is 1/2 emergent light wavelength, and all the other seven layer film optical thicknesses are 1/4 emergent light wavelength.
8. the manufacture method of semiconductor laser according to claim 1, it is characterized in that: the manufacturing materials of described anti-reflection film (6) or high-reflecting film (7) is SiO
2, TiO
2, ZrO
2, Al
2O
3In at least a.
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| CN105449519A (en) * | 2015-11-23 | 2016-03-30 | 山东华光光电子有限公司 | Double-shoulder-ridge GaAs-based laser preparation method and GaAs-based laser prepared therethrough |
| CN107732650A (en) * | 2017-11-08 | 2018-02-23 | 山西飞虹微纳米光电科技有限公司 | Gallium arsenide laser bar bar and preparation method thereof |
| CN108039645A (en) * | 2017-11-28 | 2018-05-15 | 中国科学院半导体研究所 | The method for improving laser life-span and luminous efficiency |
| CN108832483A (en) * | 2018-06-27 | 2018-11-16 | 潍坊华光光电子有限公司 | A kind of preparation method of ridged semiconductor laser diode |
| CN110021877A (en) * | 2018-01-10 | 2019-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of ridge waveguide semiconductor laser device and preparation method thereof |
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| WO2021098828A1 (en) * | 2019-11-21 | 2021-05-27 | 深圳市中光工业技术研究院 | Laser chip manufacturing method, and laser |
| WO2022194453A1 (en) * | 2021-03-15 | 2022-09-22 | Ams-Osram International Gmbh | Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip |
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| WO2021098828A1 (en) * | 2019-11-21 | 2021-05-27 | 深圳市中光工业技术研究院 | Laser chip manufacturing method, and laser |
| CN112342514A (en) * | 2020-10-19 | 2021-02-09 | 武汉光迅科技股份有限公司 | Semiconductor laser cavity surface coating method and semiconductor laser |
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