CN105449519A - Double-shoulder-ridge GaAs-based laser preparation method and GaAs-based laser prepared therethrough - Google Patents
Double-shoulder-ridge GaAs-based laser preparation method and GaAs-based laser prepared therethrough Download PDFInfo
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- CN105449519A CN105449519A CN201510821058.7A CN201510821058A CN105449519A CN 105449519 A CN105449519 A CN 105449519A CN 201510821058 A CN201510821058 A CN 201510821058A CN 105449519 A CN105449519 A CN 105449519A
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- gaas
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- strip structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a double-shoulder-ridge GaAs-based laser preparation method, and the method comprises the following steps: carrying out exposure, development and corrosion through employing a photoetching mask and preparing a needed pattern structure; carrying out secondary exposure; carrying out secondary development; growing a current blocking layer on an epitaxial wafer after the secondary development; peeling the current blocking layer of a photoresist place at the top of a ridge structure, forming a current injection window, carrying out the evaporation and thinning of a P-plane electrode, carrying out the evaporation, alloying and packaging of an N-plane electrode, and forming a GaAs-based laser. The method saves a part of steps in a conventional technology: removing photoresist after corrosion, growing the current blocking layer, and carrying out the pattern corrosion of the current blocking layer in a nesting mode. The method cannot damage to the epitaxial layer on a substrate, is convenient to operate, simplifies the technological steps, shortens the production cycle, and reduces the consumption of raw materials.
Description
Technical field
The preparation method that the present invention relates to a kind of GaAs-base laser of both shoulders vallum and the GaAs-base laser utilizing the method to prepare, belong to the technical field of semiconductor.
Background technology
Semiconductor laser utilizes semiconductor electronic optical transition to cause stimulated emission of photons and the general name of the optical generator produced and image intensifer.Semiconductor laser is since appearance, and as a kind of novel light source, due to some advantages of itself, such as volume is little, power is high, the life-span is long, easy to use etc., enjoys favor in each field.But the step of preparation process of semiconductor laser is many, and processing line is long, especially photoetching process.Photoetching process utilizes photoresist to pass through exposure, development etc., by the Graphic transitions on mask plate on wafer, makes wafer has the photoetching offset plate figure pattern wanting the device made, then by chemistry or physical method, transferred on wafer by graphic structure.Chemical method is wet etching mainly, exactly epitaxial wafer is placed in liquid chemical corrosion liquid and corrodes, in corrosion process, corrosive liquid by the material contacted with it by chemical reaction progressively etch dissolve away.Dry etching comprises ion beam etching (IonBeamEtchingIBE), reactive ion etching (ReactionlonEtchingRIE) and induction misfortune and closes plasma etching (InductiveCouplePlasmasEtchingICP), the essence of IBE is physical etchings, inert gas--hydrogen is as ion source in use, under utilizing vacuum, ion directly bombards sample surfaces, energetic ion impinges perpendicularly on sample surfaces by energy trasfer to the atom of the material that is etched, away from substrate surface; RIE etching is a kind of technology adopting chemical reaction and physical ion bombardment to remove wafer surface material; ICP etching and sense coupling, the physical action that the chemical reaction utilizing high-density plasma to cause and reacting gas Ions Bombardment produce etches.
The preparation technology of semiconductor laser is more loaded down with trivial details, wherein in order to make the SiO as current barrier layer
2covering the overlie of vallum, is exactly wherein one of sixty-four dollar question.In order to solve this technical barrier, some uses the mode of photoetching alignment to realize, and the lithographic process window of this mode is smaller, and the equipment needed costly.Another mode needs the shrink technology of photoresist.After photoresist above epitaxial wafer obtains the figure consistent with mask by series of process; photoresist is as diaphragm; the material layer of its covering place can be protected not damaged; obtain the figure needed on substrate after; mask lithography glue as the mask peeling off growth current barrier layer, and can also not need photoetching again.But all have photoresist, so can only first kind of way be adopted with the GaAs base laser of both shoulders vallum graphic structure because of on the part of vallum and shoulder.Like this in the preparation process of the GaAs base laser of both shoulders vallum graphic structure, need the graphics process of carrying out repeatedly to wafer, all need through whirl coating, photoetching, development at every turn, corrode and the process such as to remove photoresist.Step in technical process is complicated, produces line duration long, also can increase the abnormal probability occurred in technical process, increase raw-material consumption.The processing method of photoresist and the preparation method of semiconductor device disclosed in Chinese patent literature CN103309151A, just there is the technical problem of above-mentioned existence in the manufacture method of semiconductor laser disclosed in Chinese patent literature CN102299480A, Chinese patent literature CN101154049A provides a kind of method preparing photoetching offset plate figure, the method carries out once large-area exposure by spin coating positive photoresist, and then spin coating photoresist carries out the rear development of figure masking exposure, the method lengthening certain hour development after observing figure clearly obtains photoetching offset plate figure, its needs carry out repeatedly photoetching, development, technics comparing is complicated.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of preparation method of GaAs-base laser of both shoulders vallum.
The present invention also provides a kind of GaAs-base laser utilizing said method to prepare.
Technical scheme of the present invention is as follows:
A preparation method for the GaAs-base laser of both shoulders vallum, comprises step as follows:
1) utilize lithography mask version photoetching process that described epitaxial loayer is etched both shoulders structure, and etch ridge strip structure between described both shoulders structure; Photoresist is left respectively in the top of both shoulders structure and ridge strip structure; Described photoetching process comprises the work steps such as exposure, development, corrosion;
2) re-expose: the photoresist at ridge strip structure top is blocked, and the photoresist of described both shoulders structural top is exposed;
3) redevelopment: the photoresist being removed exposed portion by development;
4) epitaxial wafer after redevelopment grows current barrier layer;
5) current barrier layer at stripping photoresist place: peel off the current barrier layer that photoresist position is arranged at ridge strip structure top, forms pulse current injectingt window.
, described step 2 preferred according to the present invention), 3) in, block the photoresist at ridge strip structure top, the graphic width of described mask plate is greater than the top width of described ridge strip structure.The advantage herein designed is, directly shoulder mask lithography glue above can be removed, avoid removal photoresist, growth current barrier layer, the work steps such as photoetching again, corrosion current barrier layer.Can make simultaneously described current barrier layer upwards elongation growth to the top of ridge strip structure, improve the performance of product.
Preferred according to the present invention, in above-mentioned steps 5) after, also need that the work step such as p side electrode evaporation, thinning, N face electrode evaporation, alloy, encapsulation is carried out to epitaxial wafer again and form GaAs-base laser.
Preferred according to the present invention, step 1) in, described photo etched mask is included in spin coating photoresist on epitaxial wafer, and the thickness of its photoresist is
Preferred according to the present invention, step 1) in, described photo etched mask also comprises the solvent utilizing and toast and remove in described photoresist: in baking oven, toast 15-30min or hot plate 90 DEG C-110 DEG C baking 1-4min at 90 DEG C-110 DEG C.
Preferred according to the present invention, step 1) in, after to extension film developing, more described photoresist is toasted: in baking oven, at 90 DEG C-110 DEG C, toast 15-30min or hot plate 90 DEG C-110 DEG C baking 1-4min.
Preferred according to the present invention, step 1) in, be wet etching to described epitaxial loayer corrosion.The proportioning that the corrosive liquid that described wet etching uses is routine, comprises the mixed liquor of analytically pure phosphoric acid, hydrogen peroxide, deionized water, and saturated bromine water; In the mixed liquor of described phosphoric acid, hydrogen peroxide, deionized water, phosphoric acid: hydrogen peroxide: deionized water=1:1:(3 ~ 4) volume ratio.
Preferred according to the present invention, step 1) in, to not corroding by the epitaxial loayer of photoresist protection, corrosion depth is
Preferred according to the present invention, step 3) in, the described redevelopment time is 15s-40s.
Preferred according to the present invention, step 4) in, described current barrier layer is SiO2 or Si
3n
4, thickness is
A kind of GaAs-base laser utilizing said method to prepare, the epitaxial loayer comprising substrate and grow over the substrate, described epitaxial loayer comprises both shoulders structure and ridge strip structure, described ridge strip structure is arranged between described both shoulders structure, the surface of described epitaxial loayer is provided with current barrier layer, the side surface of described ridge strip structure is provided with current barrier layer, the exposed epitaxial loayer in top of described ridge strip structure.
Preferred according to the present invention, the side surface of described ridge strip structure is provided with current barrier layer and extends to the top of described ridge strip structure.
Beneficial effect of the present invention:
For in prior art, the problem that the GaAs-base laser chip online production cycle is longer, step is complicated of both shoulders vallum, preparation method of the present invention eliminates the part steps in common process: a moment removes photoresist after corrosion, and the mode of growth current barrier layer, employing alignment carries out the work steps such as the corrosion of current barrier layer.Method of the present invention can not form damage to the epitaxial loayer above substrate, easy to operate, simplifies processing step, shortens the production cycle, reduce raw-material consumption simultaneously.
Accompanying drawing explanation
Fig. 1 is the process chart of preparation method of the present invention;
Fig. 2 is in the method for the invention, through step 1) structural representation of sample after process;
Fig. 3 is in the method for the invention, through step 3) structural representation of sample after redevelopment;
Fig. 4 is in the method for the invention, through step 5) overall structure schematic diagram after stripping photoresist place current barrier layer;
In figures 1-4,001, substrate; 002, ridge strip structure; 003, both shoulders structure; 004, photoresist; 005, current barrier layer; 006, portion of epi layer; 007, pulse current injectingt window.
Embodiment
Below in conjunction with specific embodiment and Figure of description, the present invention will be further described, but be not limited thereto.
As Figure 1-4.
Embodiment 1,
A preparation method for the GaAs-base laser of both shoulders vallum, comprises step as follows:
1) utilize lithography mask version photoetching process that described epitaxial loayer is etched both shoulders structure, and etch ridge strip structure 002 between described both shoulders structure 003; Photoresist 004 is left at the top of both shoulders structure 003 and ridge strip structure 002 respectively; Described photoetching process comprises the work steps such as exposure, development, corrosion;
2) re-expose: the photoresist 004 at ridge strip structure 002 top is blocked, and the photoresist at described both shoulders structure 003 top is exposed;
3) redevelopment: the photoresist being removed exposed portion by development;
4) epitaxial wafer after redevelopment grows current barrier layer 005;
5) current barrier layer at stripping photoresist place: peel off the current barrier layer that photoresist position is arranged at ridge strip structure 002 top, forms pulse current injectingt window 007;
Described step 2), 3) in, block the photoresist at ridge strip structure top, the graphic width of described mask plate is greater than the top width of described ridge strip structure.
Described step 1) in, described photo etched mask is included in spin coating photoresist on epitaxial wafer, and the thickness of its photoresist is
Described step 1) in, described photo etched mask also comprises the solvent utilizing and toast and remove in described photoresist: in baking oven, toast 15-30min or hot plate 90 DEG C-110 DEG C baking 1-4min at 90 DEG C-110 DEG C.
Described step 1) in, after to extension film developing, more described photoresist is toasted: in baking oven, at 90 DEG C-110 DEG C, toast 15-30min or hot plate 90 DEG C-110 DEG C baking 1-4min.
Embodiment 2,
The preparation method of the GaAs-base laser of a kind of both shoulders vallum as described in Example 1, its difference is, in above-mentioned steps 5) after, also need that the work step such as p side electrode evaporation, thinning, N face electrode evaporation, alloy, encapsulation is carried out to epitaxial wafer again and form GaAs-base laser.
Embodiment 3,
The preparation method of the GaAs-base laser of a kind of both shoulders vallum as described in Example 1, its difference is, described step 1) in, be wet etching to described epitaxial loayer corrosion.The proportioning that the corrosive liquid that described wet etching uses is routine, comprises the mixed liquor of analytically pure phosphoric acid, hydrogen peroxide, deionized water, and saturated bromine water; In the mixed liquor of described phosphoric acid, hydrogen peroxide, deionized water, phosphoric acid: hydrogen peroxide: deionized water=1:1:(3 ~ 4) volume ratio.
Embodiment 4,
The preparation method of the GaAs-base laser of a kind of both shoulders vallum as described in Example 1, its difference is, step 1) in, to not corroding by the epitaxial loayer of photoresist protection, corrosion depth is
Described step 3) in, the described redevelopment time is 15s-40s.
Described step 4) in, described current barrier layer is SiO2 or Si
3n
4, thickness is
Embodiment 5,
A kind of utilization GaAs-base laser that as described in embodiment 1-4 prepared by method, comprise substrate 001 and the epitaxial loayer of growth on described substrate 001, described epitaxial loayer comprises both shoulders structure 003 and ridge strip structure 002, described ridge strip structure 002 is arranged between described both shoulders structure 003, the surface of described epitaxial loayer is provided with current barrier layer 005, the side surface of described ridge strip structure 002 is provided with current barrier layer, the exposed epitaxial loayer in top of described ridge strip structure 002.
Embodiment 6,
Utilize a GaAs-base laser prepared by method as described in Example 5, its difference is, the side surface of described ridge strip structure 002 is provided with current barrier layer 005 and extends to the top of described ridge strip structure 002.
Claims (10)
1. a preparation method for the GaAs-base laser of both shoulders vallum, is characterized in that, it is as follows that this preparation method comprises step:
1) utilize lithography mask version photoetching process that described epitaxial loayer is etched both shoulders structure, and etch ridge strip structure between described both shoulders structure; Photoresist is left respectively in the top of both shoulders structure and ridge strip structure;
2) re-expose: the photoresist at ridge strip structure top is blocked, and the photoresist of described both shoulders structural top is exposed;
3) redevelopment: the photoresist being removed exposed portion by development;
4) epitaxial wafer after redevelopment grows current barrier layer;
5) current barrier layer at stripping photoresist place: peel off the current barrier layer that photoresist position is arranged at ridge strip structure top, forms pulse current injectingt window.
2. the preparation method of the GaAs-base laser of a kind of both shoulders vallum according to claim 1, it is characterized in that, described step 2), 3) in, block the photoresist at ridge strip structure top, the graphic width of described mask plate is greater than the top width of described ridge strip structure.
3. the preparation method of the GaAs-base laser of a kind of both shoulders vallum according to claim 1, it is characterized in that, in above-mentioned steps 5) after, also need that the work step such as p side electrode evaporation, thinning, N face electrode evaporation, alloy, encapsulation is carried out to epitaxial wafer again and form GaAs-base laser.
4. the preparation method of the GaAs-base laser of a kind of both shoulders vallum according to claim 1, is characterized in that, step 1) in, described photo etched mask is included in spin coating photoresist on epitaxial wafer, and the thickness of its photoresist is
5. the preparation method of the GaAs-base laser of a kind of both shoulders vallum according to claim 1, it is characterized in that, step 1) in, described photo etched mask also comprises the solvent utilizing and toast and remove in described photoresist: in baking oven, toast 15-30min or hot plate 90 DEG C-110 DEG C baking 1-4min at 90 DEG C-110 DEG C; After to extension film developing, more described photoresist is toasted: in baking oven, at 90 DEG C-110 DEG C, toast 15-30min or hot plate 90 DEG C-110 DEG C baking 1-4min.
6. the preparation method of the GaAs-base laser of a kind of both shoulders vallum according to claim 1, is characterized in that, step 1) in, be wet etching to described epitaxial loayer corrosion; To not corroding by the epitaxial loayer of photoresist protection, corrosion depth is
7. the preparation method of the GaAs-base laser of a kind of both shoulders vallum according to claim 1, is characterized in that, step 3) in, the described redevelopment time is 15s-40s.
8. the preparation method of the GaAs-base laser of a kind of both shoulders vallum according to claim 1, is characterized in that, step 4) in, described current barrier layer is SiO2 or Si
3n
4, thickness is
9. one kind utilizes the GaAs-base laser that as described in claim 1-8 any one prepared by method, it is characterized in that, the epitaxial loayer that this laser comprises substrate and grows over the substrate, described epitaxial loayer comprises both shoulders structure and ridge strip structure, described ridge strip structure is arranged between described both shoulders structure, the surface of described epitaxial loayer is provided with current barrier layer, the side surface of described ridge strip structure is provided with current barrier layer, the exposed epitaxial loayer in top of described ridge strip structure.
10. GaAs-base laser as claimed in claim 9, is characterized in that, the side surface of described ridge strip structure is provided with current barrier layer and extends to the top of described ridge strip structure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108631153A (en) * | 2017-03-22 | 2018-10-09 | 山东华光光电子股份有限公司 | A kind of total reflection light waveguide semiconductor chip of laser and preparation method thereof |
| CN112436381A (en) * | 2020-11-26 | 2021-03-02 | 湖北光安伦芯片有限公司 | High-speed DFB laser chip and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6040590A (en) * | 1996-12-12 | 2000-03-21 | California Institute Of Technology | Semiconductor device with electrostatic control |
| CN1356749A (en) * | 2000-11-30 | 2002-07-03 | 株式会社东芝 | Semiconductor laser and methods for manufacturing and installing it |
| CN102299480A (en) * | 2011-07-15 | 2011-12-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method for semiconductor laser |
-
2015
- 2015-11-23 CN CN201510821058.7A patent/CN105449519A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6040590A (en) * | 1996-12-12 | 2000-03-21 | California Institute Of Technology | Semiconductor device with electrostatic control |
| CN1356749A (en) * | 2000-11-30 | 2002-07-03 | 株式会社东芝 | Semiconductor laser and methods for manufacturing and installing it |
| CN102299480A (en) * | 2011-07-15 | 2011-12-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method for semiconductor laser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108631153A (en) * | 2017-03-22 | 2018-10-09 | 山东华光光电子股份有限公司 | A kind of total reflection light waveguide semiconductor chip of laser and preparation method thereof |
| CN112436381A (en) * | 2020-11-26 | 2021-03-02 | 湖北光安伦芯片有限公司 | High-speed DFB laser chip and manufacturing method thereof |
| CN112436381B (en) * | 2020-11-26 | 2022-07-08 | 湖北光安伦芯片有限公司 | High-speed DFB laser chip and manufacturing method thereof |
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Application publication date: 20160330 |