CN104300048A - Manufacturing method for GaN-based light-emitting diode chip - Google Patents

Manufacturing method for GaN-based light-emitting diode chip Download PDF

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CN104300048A
CN104300048A CN201410594339.9A CN201410594339A CN104300048A CN 104300048 A CN104300048 A CN 104300048A CN 201410594339 A CN201410594339 A CN 201410594339A CN 104300048 A CN104300048 A CN 104300048A
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emitting diode
diode chip
gan
etching
gan base
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CN104300048B (en
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刘岩
马玉玲
彭璐
徐现刚
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Shandong Inspur Huaguang Optoelectronics Co Ltd
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Shandong Inspur Huaguang Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

A manufacturing method for a GaN-based light-emitting diode chip includes the following steps that (1), a mesa structure is formed through dry etching from a p-type GaN layer to an n-type GaN layer of a GaN-based epitaxial wafer, a mesa is manufactured on the n-type GaN layer, and photoresist remaining on the surface is removed; dry etching is ICP etching and includes the two steps that 1, Cl2 and BCl2 are adopted as etching gas for etching the GaN-based epitaxial wafer; 2, O2 is adopted for removing the remaining photoresist; (2), an ITO transparent conducting film grows on the surface of the p-type GaN layer; (3), a p-type electrode and an n-type electrode are manufactured on the ITO transparent conducting film and the mesa of the n-type GaN layer respectively; (4), a passivation layer is manufactured on the surface of the GaN-based light-emitting diode chip. According to the method, the step of removing the photoresist through O2 plasmas is added in ICP etching, the remaining photoresist can be removed thoroughly, cleanness of the surface of the chip is ensured, the technological process is simplified, and the production cycle is shortened.

Description

A kind of preparation method of GaN base light-emitting diode chip for backlight unit
Technical field
The present invention relates to a kind of preparation method of GaN base light-emitting diode chip for backlight unit, belong to photoelectron technical field.
Background technology
GaN, InN, AlN etc. have III-V race's semi-conducting material of symmetrical hexagonal system structure, it is all direct gap, therefore the material as luminescent device is very suitable for, wherein according to the difference of composition, can obtain the ternary of energy gap from 6.5eV to 0.7eV or quaternary compound semiconductor, corresponding emission wavelength contains the wavelength band of deep UV (ultraviolet light) to far red light.Due to this feature of GaN row semiconductor, GaN row semi-conducting material is widely used on the photoelectric devices such as LED and LD.
In early days because GaN crystal is not mated with the lattice constant of growth substrates, GaN row blue green light LED epitaxial growth quality is differed greatly compared with the red yellow light LED of GaAs series, until by GaN blue green light LED structure growth in (0001) Sapphire Substrate, the dream making the mankind have all-colour LED is achieved.Relative to other substrate such as Si, SiC, Sapphire Substrate has that stability is high, technology maturation, mechanical strength are high, cost performance advantages of higher, therefore uses Sapphire Substrate to remain the main flow of present light-emitting diode industry.
Because Sapphire Substrate is nonconducting, therefore in the preparation of GaN base LED chip, just by LED from surface removal portion of material to heavily doped N-shaped GaN, and p-type and n-type electrode must be prepared respectively in p-type and N-shaped GaN material.The chemical bonding of GaN can be higher, high combination energy and broad-band gap make III group nitride material be chemically inert in essence, at normal temperatures not by the corrosion of the solution such as chemical bronsted lowry acids and bases bronsted lowry, with material such as chemical corrosion method corrosion GaN etc., be that corrosion rate or the anisotropy of corrosion all can not be satisfactory.Therefore in the preparation of GaN base LED chip, just must adopt dry etching technology, the dry etching method of current main flow is ICP (Inductive Coupled Plasma, inductively coupled plasma) etching.
In ICP etching process, the gas passed in ICP etching apparatus chamber under the effect in high-frequency radio frequency source can form plasma, can bombard wafer surface with the effect of physics etching GaN epitaxial layer under the effect of internal electric field, the atomic group simultaneously formed can etch GaN epitaxial layer with chemical action.In ICP etching process, the temperature of wafer surface can raise, the photoresist of wafer surface is changed and cause ICP etch after photoresist be difficult to remove.And photoresist removal occurs the quality problems such as power down pole, difficult bonding wire after follow-up chip thoroughly can not caused to have prepared, generally can increase by a step O after degumming process 2plasma cleaning process, to ensure chip surface noresidue glue, but increases O 2plasma cleaning process can extend manufacture cycle, and increases production cost.
Summary of the invention
For the deficiency that existing ICP lithographic technique exists, the preparation method of the GaN base light-emitting diode chip for backlight unit that the present invention proposes a kind of noresidue glue, technological process simplifies.
The preparation method of GaN base light-emitting diode chip for backlight unit of the present invention, comprises the following steps:
(1) be coated with positive photoresist at the upper surface of the p-type GaN layer of GaN base epitaxial wafer, photoetching carried out to positive photoresist, makes the figure of required mesa structure by lithography; Etch mesa structure along the p-type GaN layer of GaN base epitaxial wafer to n-type GaN layer by dry etching according to the figure of mesa structure, n-type GaN layer prepares table top, removes the photoresist of remained on surface simultaneously; Described dry etching is ICP etching, and etching process comprises two steps, and the first step adopts Cl 2and BCl 2for etching gas, etching GaN base epitaxial loayer is to n-type GaN layer, and second step adopts O 2as etching gas, remove residual photoresist; Through dry etching, not only complete the making of mesa structure figure, and surface clean is clean, directly can carry out next step ITO growth;
(2) at superficial growth one deck ITO (Indium Tin Oxide, the tin indium oxide) nesa coating of p-type GaN layer;
(3) on the table top of ITO nesa coating and n-type GaN layer, p-type electrode and n-type electrode is prepared respectively;
(4) passivation layer is made on the surface at GaN base light-emitting diode chip for backlight unit.
In described step (1) p-type GaN layer upper surface be coated with positive photoresist thickness be 2-6 μm.
In described step (1), the first step of etching process adopts Cl 2/ BCl 2for etching gas, 50-100sccm/5-20sccm, 2-8mTorr, RF Power1 200-500W, RF Power2 100-300W, temperature 0-20 DEG C.
In described step (1), the second step of etching process adopts O 2for etching gas, 20-80sccm, 5-20mTorr, RF1200-800W, RF250-300W, temperature 0-20 DEG C.
The thickness of the ITO nesa coating of described step (2) is 1000-3000 dust.
In described step (4), the passivation layer thickness of the upper surface deposition of GaN base light-emitting diode chip for backlight unit is
In described step (4), passivation layer is silicon oxide film.
The present invention is by increasing by a step O after the GaN etch step in the ICP etching technics of routine 2plasma removes the step of photoresist, eliminates removing photoresist and plasma cleaning step in GaN base light-emitting diode chip for backlight unit preparation process, simplifies technological process, shorten the production cycle.The O increased 2plasma removes the step of photoresist, can remove residual photoresist thoroughly, ensures that chip surface is clean, avoids in subsequent technique quality problems such as occurring power down pole, difficult bonding wire.
Accompanying drawing explanation
Fig. 1 is the GaN base epitaxial wafer schematic diagram with mesa structure that step in the present invention (1) obtains.
Fig. 2 is the obtained GaN base epitaxial wafer schematic diagram with nesa coating of step of the present invention (2).
Fig. 3 is the obtained GaN base epitaxial wafer schematic diagram with metal electrode of step of the present invention (3).
Fig. 4 is the obtained GaN base epitaxial wafer schematic diagram with passivation layer of step (4) in the present invention.
In figure: 1, p-type GaN layer, 2, quantum well layer, 3, n-type GaN layer, 4, nesa coating, 5, metal electrode, 6, passivation layer.
Embodiment
The preparation method of GaN base light-emitting diode chip for backlight unit of the present invention, be applicable to the GaN base light-emitting diode chip for backlight unit of the Sapphire Substrate of formal dress, concrete steps are as follows:
(1) first 2-6 μm (preferably 3 μm) thick positive photoresist is coated with at the upper surface of the p-type GaN layer 1 of GaN base epitaxial wafer, by aligning, exposure, development, baking step, photoetching is carried out to described positive photoresist, make the figure that can etch mesa structure for follow-up ICP by lithography.Use hot plate to toast at 98 DEG C to aim at for 1 minute-2 minutes, then expose 5 seconds-20 seconds under ultraviolet light, then after drying, use Tetramethylammonium hydroxide to develop 10 seconds-30 seconds, use hot plate to toast 1-2 minute at 98 DEG C.
As shown in Figure 1, utilize ICP dry etching method, etch mesa structure along the p-type GaN layer 1 of GaN base epitaxial wafer, quantum well layer 2 to n-type GaN layer 3, remove the photoresist of remained on surface simultaneously.
Concrete ICP etching process is divided into two steps, and the first step adopts Cl 2/ BCl 2for etching gas, 50-100sccm/5-20sccm, 2-8mTorr, RF Power1 200-500W, RF Power2 100-300W, temperature 0-20 DEG C, etching GaN base epitaxial wafer; Preferred 80sccm/10sccm, 6mTorr, RF Power1 300W, RF Power2 200W, temperature 10 DEG C.
Second step adopts O 2for etching gas, 20-80sccm, 5-20mTorr, RF1 200-800W, RF250-300W, temperature 0-20 DEG C, remove residual photoresist; Preferred 50sccm, 15mTorr, RF1 500W, RF2 100W, temperature 10 DEG C.
(2) as shown in Figure 2, at surface deposition one deck ITO nesa coating 4 of p-type GaN layer 1.Concrete steps are: first, utilize electron beam evaporation method at the upper surface of GaN base epitaxial wafer (here at the surface deposition ITO of whole epitaxial wafer, pass behind the ITO outside photoetching, erosion removal p-GaN, final result is at p-type GaN layer surface deposition ITO) deposit the ITO nesa coating of one deck 1000-3000 dust as current extending, secondly, current extending is coated 2 μm of thick positive photoresists, then by aiming at, exposure, development, dry, corrosion step carries out photoetching to described positive photoresist, make by lithography and only retain ITO nesa coating corresponding in p-type GaN layer, wherein use hot plate at 98 DEG C, toast 1-2 minute aligning, then 5-20 second is exposed under ultraviolet light, Tetramethylammonium hydroxide development 10-30 second is used after drying again, hot plate is used to toast 1-2 minute at 98 DEG C, putting into concentration is that the HCl solution of 25-30wt% corrodes 15-30 minute, erode the ITO nesa coating do not protected by positive photoresist, put into the ultrasonic 5-10 minute of acetone, then in ethanol ultrasonic 10 minutes, deionized water rinsing 10 minutes are used after taking out, and then remove the photoresist on GaN base epitaxial wafer surface.
(3) as shown in Figure 3, prepare metal electrode 5, namely on the table top of ITO nesa coating 4 and n-type GaN layer 3, prepare p-type electrode and n-type electrode respectively, obtain GaN base light-emitting diode chip for backlight unit.
Concrete grammar is: on the GaN base epitaxial wafer after step (2) process, coat 3.5 μm of thick negative photoresists, carry out aiming at, expose, develop, photoetching carried out to described negative photoresist after baking step, wherein at 98 DEG C, toast 1-2 minute aligning with hot plate, then 5-20 second is exposed under ultraviolet light, Tetramethylammonium hydroxide development 10-30 second is used after drying again, use hot plate to toast 1-2 minute at 98 DEG C, ITO nesa coating 4 and n-type GaN layer 3 make by lithography p-type electrode and n-type electrode region; Finally utilize electron-beam vapor deposition method to deposit 2 μm of thick Cr metal levels and Au metal level respectively at described p-type electrode zone and n-type electrode region, after peeling off negative photoresist, obtain type-p metal electrode and N-shaped metal electrode.
(4) as shown in Figure 4, prepared by passivation layer 6 to the GaN base light-emitting diode chip for backlight unit obtained by step (3)
PECVD (chemical vapour deposition technique) is used first to deposit one deck at the upper surface of GaN base light-emitting diode chip for backlight unit silicon oxide film as passivation layer 6 (exposing metal electrode 5), then the positive photoresist of 2 μm is coated on the surface of passivation layer 6, use hot plate at 98 DEG C, toast 1-2 minute aligning, then 5-20 second is exposed under ultraviolet light, Tetramethylammonium hydroxide development 10-30 second is used after drying again, use hot plate to toast 1-2 minute at 98 DEG C, put into SiO 2corrode 30-60 second in corrosive liquid, erode not by SiO that photoresist is protected 2film, puts into the ultrasonic 5-10 minute of acetone, then in ethanol ultrasonic 10 minutes, uses deionized water rinsing 10 minutes after taking out, and removes the photoresist on surface, forms the making of passivation layer, obtains GaN base light-emitting diode.

Claims (7)

1. a preparation method for GaN base light-emitting diode chip for backlight unit, is characterized in that, comprises the following steps:
(1) be coated with positive photoresist at the upper surface of the p-type GaN layer of GaN base epitaxial wafer, photoetching carried out to positive photoresist, makes the figure of required mesa structure by lithography; Etch mesa structure along the p-type GaN layer of GaN base epitaxial wafer to n-type GaN layer by dry etching according to the figure of mesa structure, n-type GaN layer prepares table top, removes the photoresist of remained on surface simultaneously; Described dry etching is ICP etching, and etching process comprises two steps, and the first step adopts Cl 2and BCl 2for etching gas, etching GaN base epitaxial loayer is to n-type GaN layer, and second step adopts O 2as etching gas, remove residual photoresist; Through dry etching, not only complete the making of mesa structure figure, and surface clean is clean, directly can carry out next step ITO growth;
(2) at superficial growth one deck ITO (Indium Tin Oxide, the tin indium oxide) nesa coating of p-type GaN layer;
(3) on the table top of ITO nesa coating and n-type GaN layer, p-type electrode and n-type electrode is prepared respectively;
(4) passivation layer is made on the surface at GaN base light-emitting diode chip for backlight unit.
2. the preparation method of GaN base light-emitting diode chip for backlight unit according to claim 1, is characterized in that, in described step (1) p-type GaN layer upper surface be coated with positive photoresist thickness be 2-6 μm.
3. the preparation method of GaN base light-emitting diode chip for backlight unit according to claim 1, is characterized in that, in described step (1), the first step of etching process adopts Cl 2/ BCl 2for etching gas, 50-100sccm/5-20sccm, 2-8mTorr, RF Power1 200-500W, RF Power2 100-300W, temperature 0-20 DEG C.
4. the preparation method of GaN base light-emitting diode chip for backlight unit according to claim 1, is characterized in that, in described step (1), the second step of etching process adopts O 2for etching gas, 20-80sccm, 5-20mTorr, RF1 200-800W, RF250-300W, temperature 0-20 DEG C.
5. the preparation method of GaN base light-emitting diode chip for backlight unit according to claim 1, is characterized in that, the thickness of the ITO nesa coating of described step (2) is 1000-3000 dust.
6. the preparation method of GaN base light-emitting diode chip for backlight unit according to claim 1, is characterized in that, in described step (4), the passivation layer thickness of the upper surface deposition of GaN base light-emitting diode chip for backlight unit is
7. the preparation method of GaN base light-emitting diode chip for backlight unit according to claim 1, is characterized in that, in described step (4), passivation layer is silicon oxide film.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105140354A (en) * 2015-08-13 2015-12-09 山东浪潮华光光电子股份有限公司 Preparation method of GaN-based light-emitting diode chip
CN105719955A (en) * 2016-02-16 2016-06-29 山东浪潮华光光电子股份有限公司 Preparation method of GaN-based light-emitting diode chip
CN108281457A (en) * 2018-01-30 2018-07-13 澳洋集团有限公司 LED matrix array of display and preparation method thereof
CN108807607A (en) * 2017-04-27 2018-11-13 合肥彩虹蓝光科技有限公司 A kind of manufacturing method of specular removal high voltage LED chip

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CN103426981A (en) * 2012-05-22 2013-12-04 无锡华润华晶微电子有限公司 Manufacturing method for GaN semiconductor LED chip
CN103633205A (en) * 2013-12-19 2014-03-12 聚灿光电科技(苏州)有限公司 Production method of LED (light emitting diode) chip
CN104022200A (en) * 2013-02-28 2014-09-03 山东浪潮华光光电子股份有限公司 GaN-based light emitting diode chip and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100167434A1 (en) * 2008-12-26 2010-07-01 Lextar Electronics Corp. Method for fabricating light emitting diode chip
CN102412348A (en) * 2010-09-17 2012-04-11 乐金显示有限公司 Method for manufacturing semiconductor light-emitting device
CN103426981A (en) * 2012-05-22 2013-12-04 无锡华润华晶微电子有限公司 Manufacturing method for GaN semiconductor LED chip
CN104022200A (en) * 2013-02-28 2014-09-03 山东浪潮华光光电子股份有限公司 GaN-based light emitting diode chip and preparation method thereof
CN103633205A (en) * 2013-12-19 2014-03-12 聚灿光电科技(苏州)有限公司 Production method of LED (light emitting diode) chip

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105140354A (en) * 2015-08-13 2015-12-09 山东浪潮华光光电子股份有限公司 Preparation method of GaN-based light-emitting diode chip
CN105719955A (en) * 2016-02-16 2016-06-29 山东浪潮华光光电子股份有限公司 Preparation method of GaN-based light-emitting diode chip
CN105719955B (en) * 2016-02-16 2018-09-25 山东浪潮华光光电子股份有限公司 A kind of preparation method of GaN base light emitting chip
CN108807607A (en) * 2017-04-27 2018-11-13 合肥彩虹蓝光科技有限公司 A kind of manufacturing method of specular removal high voltage LED chip
CN108281457A (en) * 2018-01-30 2018-07-13 澳洋集团有限公司 LED matrix array of display and preparation method thereof

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