CN105355727A - Preparation method of GaAs-based light-emitting diode chip - Google Patents
Preparation method of GaAs-based light-emitting diode chip Download PDFInfo
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- CN105355727A CN105355727A CN201510690868.3A CN201510690868A CN105355727A CN 105355727 A CN105355727 A CN 105355727A CN 201510690868 A CN201510690868 A CN 201510690868A CN 105355727 A CN105355727 A CN 105355727A
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- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention relates to a preparation method of a GaAs-based light-emitting diode chip. The preparation method comprises the following steps: (1) evaporating a layer of AuBe film on a P-type epitaxial layer as a conducting film; (2) evaporating a Ti layer and an Al layer on the AuBe film; (3) photoetching an electrode pattern on the surface of the Al layer; (4) corroding the Al layer, the Ti layer and the AuBe film in sequence; (5) manufacturing a P-type electrode; (6) thinning an N surface, photoetching a metal on the N surface, and manufacturing an N electrode; and (7) dividing a chip into an independent light-emitting diode chip. AuBe, Ti and Al are evaporated on the surface of the p-type epitaxial layer, then a positive photoresist is uniform on the surface of the TiAl, and the P electrode pattern is manufactured after one-time corrosion of Al, Ti and AuBe through exposure and development, so that secondary photoetching in the conventional process is omitted, exposure, development and photoresist stripping after corrosion are carried out in one time, the technological process is simplified, the production cycle is shortened, the work efficiency is improved, and the consumption of raw materials is also reduced.
Description
Technical field
The present invention relates to a kind of preparation method of GaAs base light emitting diode chip, belong to photoelectron technical field.
Background technology
LED is first commercial compound semiconductor come into the market, and has had the development course of more than 40 year.LED the earliest adopts the ruddiness GaAsPLED that makes of LPE (rheotaxial growth) technology, but the performance of these LED is relative to lower current.1970, add the method proposition of nitrogen in GaP and GaAsP after, improve the performance of LED and produced the LED component such as the green glow except ruddiness, orange coloured light.Early 1980s, the AlGaAsLED utilizing liquid phase deposition technology to make has good performance.After the nineties in 20th century, because new material and new epitaxy technology are incorporated in the research of red-light LED, the GaAs base AlGaInPLED utilizing MOCVD method (MOCVD) to make substantially improves LED performance that is red and yellow spectrum district.The preparation of GaN base light-emitting diode chip for backlight unit has many methods, " a kind of GaN base light-emitting diode chip for backlight unit utilizing twice scribing to prepare and preparation method thereof ", CN103515495A disclosed " a kind of growing method of GaN base light-emitting diode chip for backlight unit ", CN104022200A disclosed " a kind of GaN base light-emitting diode chip for backlight unit and preparation method thereof " and CN102324450A disclosed " GaN base light-emitting diode chip for backlight unit and preparation method thereof " disclosed in Chinese patent literature CN103137810A.
Photoetching process be the Graphic transitions on mask plate on wafer, make wafer has the photoetching offset plate figure pattern of device wanting to make, in order to transfer on wafer by the graphic structure of device, carry out minute graphic representation process with regard to needing the wafer after to photoetching.Processing method adopts wet etching and dry etching etc. usually.Wet etching is not having part chemical solution that is covered by photoresist and protection to remove in the film deposited before carrying out photoetching, to complete the object above transfer mask pattern to film.
Chinese patent literature CN102468382A disclosed " a kind of preparation method of GaAs substrate AlGaInP light-emitting diode " is the cutting mode by using the back side thoroughly to cut, and can reduce the loss of front surface light-emitting area, increases the light extraction efficiency of light-emitting diode; Do not relate to the method reducing electrode production process.
Chinese patent literature the CN104600168A disclosed preparation method of GaP rough surface " on the GaAs base light emitting diode chip " is the corrosive liquid that all can be caused corrosiveness by configuration to Au, GaP, preparation type-p metal electrode and coarse GaP exiting surface, do not relate to the method reducing electrode production process yet.
Present stage, in the process of preparation GaAs base light emitting diode chip, many times needs to carry out repeatedly Tiny figure process continuously to wafer, often processes once, all need to remove photoresist, and then again make new photoetching offset plate figure, make processing time long, step is various.
Summary of the invention
For the problem that time is longer, step is more that existing GaAs base light emitting diode chip technology of preparing exists, the present invention proposes a kind of process simplification, and operating efficiency improves, and again reduces the preparation method of the GaAs base light emitting diode chip of raw materials consumption simultaneously.
The preparation method of GaAs base light emitting diode chip of the present invention, comprises the following steps:
(1) on the P type epitaxial loayer of GaAs based LED epitaxial slice evaporation layer of Au Be film as conducting film; Carrying out high temperature alloy to AuBe film after evaporation completes makes it form good ohmic contact;
(2) evaporation Ti layer on AuBe film, evaporating Al layer on Ti layer;
(3) coat positive photoresist on Al layer surface, photoetching is carried out to positive photoresist, makes electrode pattern by lithography;
(4) Al layer, Ti layer and AuBe film is corroded successively;
(5) remove photoresist, produce P-type electrode;
(6) N face is thinning, evaporation N face metal, makes N electrode;
(7) chip separation is become independent LED core.
In described step (1), the thickness of AuBe film is
.
High temperature alloy temperature in described step (1) is 200-550 DEG C.
In described step (2), the thickness of Ti layer is
, the thickness of Al layer is
.
In described step (3), the thickness of photoresist is 1.1 μm-3.5 μm.
In described step (3) to the detailed process that positive photoresist carries out photoetching be:
At 100 DEG C, 15-20 minute is toasted with baking oven, then 5-20 second is exposed under ultraviolet light, re-use Tetramethylammonium hydroxide development 30-60 second, use baking oven to toast 5-15 minute at 100 DEG C, AuBe conducting film 3, Ti layer 4 and Al layer 5 make p-type electrode zone by lithography.
In described step (4), the corrosion process of Al layer is: the phosphoric acid of working concentration >=85% is heated to the 50-85 DEG C of corrosion to Al layer 5.
In described step (4), the corrosion process of Ti layer is: use ammonium fluoride etchant to corrode Ti layer at normal temperatures.
In described step (4), the corrosion process of AuBe film is: the iodine of content >=99%, the KI of content >=99% are become mixed liquor with pure water according to the proportional arrangement of mass ratio 0.8 ~ 1:3 ~ 4:15 ~ 18, the organic surface active agent accounting for its volume 0.1% ~ 0.5% is added again in mixed liquor, be made into corrosive liquid, with under above-mentioned corrosive liquid normal temperature to AuBe erosion.
Adopt acetone and ethanol to remove photoresist at 40-50 DEG C respectively in described step (5).
The thickness of described step (6) N face metal is
.
The present invention is by surperficial evaporation AuBe, Ti and the Al in p-type epitaxial layer, then at the even positive photoresist in TiAl surface, by exposing and developing, once corrode Al, Ti and AuBe and make P electrode figure, eliminate the secondary photoetching in common process, remove photoresist after directly once carrying out exposing, develop and corrode, simplify technological process, shorten the production cycle, increase work efficiency, again reduce raw-material consumption simultaneously.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of step in the present invention (3) evaporation AuBe, Ti, Al on epitaxial loayer.
Fig. 2 is the chip structure cutaway view that step of the present invention (5) obtains.
Fig. 3 is the structural representation of the GaAs base light emitting diode chip that the present invention obtains.
In figure, 1, GaAs base substrate; 2, epitaxial loayer; 3, AuBe conducting film; 4, Ti layer; 5, Al layer; 6, N-type Au.
Embodiment
The preparation method of GaAs base light emitting diode chip of the present invention, concrete steps are as follows:
(1) on GaAs base substrate 1, prepare epitaxial loayer 2 according to existing technique, form epitaxial wafer.First as shown in Figure 1, at the p-type epitaxial layer surface evaporation thickness of epitaxial loayer 2 be
auBe conducting film 3, after evaporation completes by high temperature alloy formed good ohmic contact.On AuBe conducting film 3, evaporation thickness is
ti layer 4, on Ti layer 4, evaporation thickness is
al layer 5 (the evaporation temperature of Ti layer 4, Al layer 5 is normal temperature).
(2) coat positive photoresist on the surface of Al layer 5, photoresist thickness is 1.1 μm-3.5 μm.Carry out photoetching to positive photoresist, make electrode pattern by lithography, detailed process is:
At 100 DEG C, 15-20 minute is toasted with baking oven, then 5-20 second is exposed under ultraviolet light, re-use Tetramethylammonium hydroxide development 30-60 second, use baking oven to toast 5-15 minute at 100 DEG C, AuBe conducting film 3, Ti layer 4 and Al layer 5 make p-type electrode zone by lithography.
(3) phosphoric acid of working concentration >=85% is heated to the 50-85 DEG C of corrosion to Al layer 5, uses ammonium fluoride etchant (wherein ammonium fluoride content 19%-20%, fluohydric acid content 4%-4.5%) to corrode Ti layer 4 at normal temperatures.
(4) corrosion of AuBe conducting film 3: the iodine of content >=99%, the KI of content >=99% are become mixed liquor with pure water according to the proportional arrangement of mass ratio 0.8 ~ 1:3 ~ 4:15 ~ 18, the organic surface active agent accounting for its volume 0.1% ~ 0.5% is added again in mixed liquor, be made into corrosive liquid, with under above-mentioned corrosive liquid normal temperature, AuBe conducting film 3 corroded.
(5) adopt acetone and ethanol to remove photoresist 40-50 DEG C of cleaning respectively, as shown in Figure 2, produce P-type electrode.
(6) thinning by N face, make the thickness of epitaxial wafer be 120-220 μm.Evaporation N face metal (Au) 6 makes N electrode, and the thickness in N face metal (Au) 6 is
.
(7) use diamant routinely cutting mode be made into tube core, obtain the GaAs base light emitting diode chip shown in Fig. 3.
Claims (10)
1. a preparation method for GaAs base light emitting diode chip, is characterized in that, comprises the following steps:
(1) on the P type epitaxial loayer of GaAs based LED epitaxial slice evaporation layer of Au Be film as conducting film; Carrying out high temperature alloy to AuBe film after evaporation completes makes it form good ohmic contact;
(2) evaporation Ti layer on AuBe film, evaporating Al layer on Ti layer;
(3) coat positive photoresist on Al layer surface, photoetching is carried out to positive photoresist, makes electrode pattern by lithography;
(4) Al layer, Ti layer and AuBe film is corroded successively;
(5) remove photoresist, produce P-type electrode;
(6) N face is thinning, evaporation N face metal, makes N electrode;
(7) chip separation is become independent LED core.
2. the preparation method of GaAs base light emitting diode chip according to claim 1, is characterized in that, in described step (1), the thickness of AuBe film is
3. the preparation method of GaAs base light emitting diode chip according to claim 1, is characterized in that, the high temperature alloy temperature in described step (1) is 200-550 DEG C.
4. the preparation method of GaAs base light emitting diode chip according to claim 1, is characterized in that, in described step (2), the thickness of Ti layer is
the thickness of Al layer is
5. the preparation method of GaAs base light emitting diode chip according to claim 1, is characterized in that, in described step (3), the thickness of photoresist is 1.1 μm-3.5 μm.
6. the preparation method of GaAs base light emitting diode chip according to claim 1, is characterized in that, in described step (3) to the detailed process that positive photoresist carries out photoetching is:
At 100 DEG C, 15-20 minute is toasted with baking oven, then 5-20 second is exposed under ultraviolet light, re-use Tetramethylammonium hydroxide development 30-60 second, use baking oven to toast 5-15 minute at 100 DEG C, AuBe conducting film 3, Ti layer 4 and Al layer 5 make p-type electrode zone by lithography.
7. the preparation method of GaAs base light emitting diode chip according to claim 1, is characterized in that, in described step (4), the corrosion process of Al layer is: the phosphoric acid of working concentration >=85% is heated to the 50-85 DEG C of corrosion to Al layer 5.
8. the preparation method of GaAs base light emitting diode chip according to claim 1, is characterized in that, in described step (4), the corrosion process of Ti layer is: use ammonium fluoride etchant to corrode Ti layer at normal temperatures.
9. the preparation method of GaAs base light emitting diode chip according to claim 1, it is characterized in that, in described step (4), the corrosion process of AuBe film is: the iodine of content >=99%, the KI of content >=99% are become mixed liquor with pure water according to the proportional arrangement of mass ratio 0.8 ~ 1:3 ~ 4:15 ~ 18, the organic surface active agent accounting for its volume 0.1% ~ 0.5% is added again in mixed liquor, be made into corrosive liquid, with under above-mentioned corrosive liquid normal temperature to AuBe erosion.
10. the preparation method of GaAs base light emitting diode chip according to claim 1, is characterized in that, is to adopt acetone and ethanol to remove photoresist at 40-50 DEG C respectively in described step (5).
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| CN201510690868.3A CN105355727A (en) | 2015-10-22 | 2015-10-22 | Preparation method of GaAs-based light-emitting diode chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698262A (en) * | 2017-10-24 | 2019-04-30 | 山东浪潮华光光电子股份有限公司 | A kind of electrode preparation method of LED chip |
| CN109994576A (en) * | 2018-01-02 | 2019-07-09 | 山东浪潮华光光电子股份有限公司 | A kind of GaAs base LED die production method |
| CN111987201A (en) * | 2019-05-22 | 2020-11-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light emitting diode chip |
| CN113328013A (en) * | 2020-02-28 | 2021-08-31 | 山东浪潮华光光电子股份有限公司 | Preparation method of high-brightness infrared light emitting diode core and diode core |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208508A (en) * | 2010-03-30 | 2011-10-05 | 厦门乾照光电股份有限公司 | Light emitting diode structure and manufacturing method thereof |
| CN103681277A (en) * | 2012-09-20 | 2014-03-26 | 无锡华润上华半导体有限公司 | Wet etching method in multilayer metal patterning process |
| CN103985805A (en) * | 2014-05-28 | 2014-08-13 | 马鞍山太时芯光科技有限公司 | P thick aluminum electrode of LED chip, etchant for manufacturing thick aluminum electrode and thick aluminum electrode manufacturing method |
| CN104064649A (en) * | 2013-03-20 | 2014-09-24 | 江苏扬景光电有限公司 | Light-emitting diode electrode structure and manufacturing method thereof |
-
2015
- 2015-10-22 CN CN201510690868.3A patent/CN105355727A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208508A (en) * | 2010-03-30 | 2011-10-05 | 厦门乾照光电股份有限公司 | Light emitting diode structure and manufacturing method thereof |
| CN103681277A (en) * | 2012-09-20 | 2014-03-26 | 无锡华润上华半导体有限公司 | Wet etching method in multilayer metal patterning process |
| CN104064649A (en) * | 2013-03-20 | 2014-09-24 | 江苏扬景光电有限公司 | Light-emitting diode electrode structure and manufacturing method thereof |
| CN103985805A (en) * | 2014-05-28 | 2014-08-13 | 马鞍山太时芯光科技有限公司 | P thick aluminum electrode of LED chip, etchant for manufacturing thick aluminum electrode and thick aluminum electrode manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698262A (en) * | 2017-10-24 | 2019-04-30 | 山东浪潮华光光电子股份有限公司 | A kind of electrode preparation method of LED chip |
| CN109994576A (en) * | 2018-01-02 | 2019-07-09 | 山东浪潮华光光电子股份有限公司 | A kind of GaAs base LED die production method |
| CN111987201A (en) * | 2019-05-22 | 2020-11-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light emitting diode chip |
| CN113328013A (en) * | 2020-02-28 | 2021-08-31 | 山东浪潮华光光电子股份有限公司 | Preparation method of high-brightness infrared light emitting diode core and diode core |
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Application publication date: 20160224 |