CN109755367A - A kind of method of roughening of reversed polarity AlGaInP quaternary LED chip - Google Patents
A kind of method of roughening of reversed polarity AlGaInP quaternary LED chip Download PDFInfo
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- CN109755367A CN109755367A CN201711081003.2A CN201711081003A CN109755367A CN 109755367 A CN109755367 A CN 109755367A CN 201711081003 A CN201711081003 A CN 201711081003A CN 109755367 A CN109755367 A CN 109755367A
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Abstract
A kind of method of roughening of reversed polarity AlGaInP quaternary LED chip, includes the following steps: a) to erode GaAs substrate, and erodes the barrier layer GaInP of epitaxial growth；B) one layer of GeAu film is deposited, optical graving obtains Ohm contact electrode figure；C) positive photoresist is removed, the face N Ohmic contact pattern is made；D) protection figure must be roughened by optical graving；E) N-type roughened layer is formed；F) to AlGaInP layers of progress wet process roughening of N-type, positive photoresist is removed, N-type AlGaInP coarse surface is made.Substrate, barrier layer whole erosion removal by the AlGaInP quaternary LED chip for first completing bonding; upper one layer of GeAu film is deposited as N-type Ohm contact electrode on surface again; roughening protection figure is prepared on surface again; surface roughening treatment is carried out by way of ICP etching, wet process roughening being roughened AlGaInP layers of N-type that protect the effect of figure to protect coarsening-free; avoid the unstable problem of reversed polarity AlGaInP quaternary LED chip roughening effect; light extraction efficiency is increased, the quality of chip is improved.
Description
Technical field
The present invention relates to photoelectron technical fields, and in particular to a kind of roughening side of reversed polarity AlGaInP quaternary LED chip
Method.
Background technique
Illumination new light sources of the LED as 21 century, under same brightness, semiconductor lamp power consumption is only the l/ of ordinary incandescent lamp
10, and the service life can extend 100 times.LED component is cold light source, and light efficiency is high, and operating voltage is low, and power consumption is small, small in size, can
Planar package is easy to develop light and thin type product, and the firm in structure and service life is very long, the harmful substances such as not mercurous, lead of light source itself, nothing
Infrared and ultraviolet pollution will not be generated in production and use to extraneous pollution.Therefore, semiconductor lamp have energy-saving and environmental protection,
The features such as service life is long, as transistor substitutes electron tube, semiconductor lamp substitutes traditional incandescent lamp and fluorescent lamp, also will be
Trend of the times.No matter from the angle saved electric energy, reduce greenhouse gas emission, or from the angle to reduce environmental pollution, LED makees
All there is the very high potential of substitution conventional illumination sources for novel illumination light source.
AlGaInP material system is initially the laser diode for being used to manufacture visible light, first by Japanese researchers
It is proposed in middle 1980s.LED the and LD device in that period, it is usually used matched with GaAs substrate
For Ga0.5In0.5P as active light emitting area, emission wavelength is 650 nm, is obtained extensively in quaternary laser pen and DVD, player
Using.Later, researcher's discovery introduced Al component in GaInP can further shorten emission wavelength, but if Al contains
Measure it is excessively high the luminous efficiency that will lead to device is sharply declined because when the Al content in GaInP is more than 0.53, AlGaInP
It will become indirect band-gap semiconductor, so AlGaInP material generally only is used to prepare the LED device of 570 nm or more of emission wavelength
Part.1997, the AlGaInP base LED birth of first multiple quantum wells (MQW) compound Bragg mirror (DBR) structure in the world
Raw, the LED component based on the design of such structure still occupies the very big share of LED low-end market so far.
Reversed polarity AlGaInP quaternary LED chip is widely used in high-power red-light LED field of display screen, antipole at this stage
Property i.e. carry out substrate displacement, the biggish GaAs substrate of extinction is replaced into monocrystalline conduction Si substrate or Sapphire Substrate etc., replace
After by the removal of GaAs substrate etching, erode corrosion barrier layer again and expose heavily doped layer, it is subsequent Au to be deposited on heavily doped layer
Film forms Ohmic contact, and subsequent photoetching prepares Ohmic contact layer pattern again, prepares Ohmic contact pattern at this stage and be all made of chemistry
Etch preparation and Au erosion liquid can play corrosiveness to heavily doped layer and cause n-layer part that can be exposed to air and cause oxygen
Change, eventually leads to n-layer roughening and fluctuate, the influence for how reducing this part is roughened the N-shaped of reversed polarity quaternary LED chip
Effect is more stable to become problem main at this stage.
Chinese patent document CN101494272 provides a kind of production method of P-GaN layer surface roughening that can make LED,
Successively grow n-GaN layers, quantum well layer, p-GaN layers and undoped GaN layers of roughening on a semiconductor substrate first, so
Afterwards using GaN layer of roughening undoped described in ICP or ion dry etching so that described undoped be roughened GaN layers thick
Change surface shape be transferred to it is p-GaN layer described, to make p-GaN layer surface roughening.But the invention is suitable for P-GaN table
Face roughening, and fully rely on ICP etching roughening and be likely to result in chip electric leakage, decrease in yield.
Chinese patent document CN104078535 provides a kind of reversed polarity AlGaInP base LED side wall method of roughening, first
It is exposed and develops first with mesa Self-aligned piece of the existing photoetching process to reversed polarity AlGaInP base LED,
The mesa Self-aligned piece surrounding forms fixed cycle edge pattern；Reuse the Br containing saturation2Deionized water develop complete
Epitaxial wafer corroded, cleaned after etching according to common process, processing of removing photoresist, thus realize LED side wall be roughened,
Though the method does not use ICP etching apparatus, realized using only conventional lithographic mode, there are extension crystalline substances for chemical attack epitaxial layer
It to uncontrollable factors in the majority such as, corrosion rates, then is not easy to realize in actual production, large-scale production can not be carried out.
" the AlGaInP base LED of GaP roughing in surface and its manufacturer disclosed in Chinese patent literature CN 105428485A
Method " it is directly to immerse epitaxial wafer in coarsening solution, make exposed p-type GaP Window layer roughing in surface, reaches wet etching roughening
The effect of p-type GaP window layer surface；Ito film is deposited as current extending.The method is mainly to carry out to epitaxial layer GaP
Roughening is not easy large-scale production for the more demanding of epitaxial growth and epi-layer surface.
Summary of the invention
To overcome the above deficiencies, the invention provides a kind of manufacturing process simplicity, effective improving extraction efficiency
And the method for roughening of more stable reversed polarity AlGaInP quaternary LED chip.
The present invention overcomes the technical solution used by its technical problem to be:
A kind of method of roughening of reversed polarity AlGaInP quaternary LED chip, includes the following steps:
A) the AlGaInP quaternary LED chip that bonding is completed erodes GaAs substrate, and erodes the barrier layer of epitaxial growth
GaInP；
It b) will be by one layer of GeAu be deposited by electron beam evaporation plating mode in step a) treated AlGaInP quaternary LED chip
Film applies positive photoresist in the GeAu film surface, obtains Ohm contact electrode figure by optical graving；
C) positive photoresist is removed, the face N Ohmic contact pattern is made；
D) positive photoresist is being applied by treated the AlGaInP quaternary LED chip surface step c), must be roughened by optical graving
Protect figure；
E) it is etched by ICP and the heavily doped layer of AlGaInP quaternary LED chip coarsening-free protection zone is removed and etches into N-type
AlGaInP layers, form N-type roughened layer；
F) to AlGaInP layers of progress wet process roughening of N-type, positive photoresist is removed, N-type AlGaInP coarse surface is made.
Preferably, corrosive liquid when GaAs substrate etching is handled in step a) is the mixed liquor of ammonium hydroxide, hydrogen peroxide, water, institute
State ammonium hydroxide in mixed liquor: hydrogen peroxide: the volume ratio of water is 1:2:6.
Preferably, in step a) when the GaInP corrosion treatment of barrier layer, GaInP corrosive liquid is hydrochloric acid: water volume ratio 5:3
Solution.
Preferably, in step a) the GaAs substrate etching time be 20-40 minute, GaInP etching time for 1 point 30 seconds -3 points
Clock.
Preferably, the AlGaInP quaternary LED chip in the step a) be put into after eroding GaAs substrate in pure water into
Row rinses, and is placed into GaInP corrosive liquid after rinsing well and erodes GaInP.
Preferably, in step b) in GeAu film Ge with a thickness of 0.01-0.02 μm, Au with a thickness of 0.4-0.55 μm.
Preferably, coating temperature is 150-250 DEG C in GeAu in step b).
Preferably, in step b) GeAu film surface apply positive photoresist with a thickness of 0.9-1.8 μm, in step d)
AlGaInP quaternary LED chip surface apply positive photoresist with a thickness of 3.5-4.5 μm.
Preferably, in step f) the step of AlGaInP layers of progress wet process roughening of N-type are as follows:
F1 the hydrochloric acid and pure water that the phosphoric acid for the use of mass concentration being) 96%, mass concentration are 36.5% according to volume ratio be 1:3:5 or
The proportional arrangement coarsening solution of 2:5:10；
F2) AlGaInP quaternary LED chip is put into AlGaInP layers of the N-type of exposing coarsening-free protection zone in coarsening solution into
Row roughening, and be removed remaining heavily doped layer particle by the effect of phosphoric acid, then remove positive photoresist and obtain N-type
AlGaInP coarse surface.
Preferably, in step f) wet process be roughened temperature be 28-36 DEG C, the time be 1 point 30 seconds -2 points 30 seconds.
The beneficial effects of the present invention are: passing through the substrate for the AlGaInP quaternary LED chip for first completing bonding, barrier layer
Whole erosion removals, then upper one layer of GeAu film is deposited as N-type Ohm contact electrode on surface, then prepare roughening protection on surface
Figure, AlGaInP layer of N-type for protect coarsening-free by the effect of roughening protection figure are etched by ICP, the sides that wet process is roughened
Formula carries out surface roughening treatment, avoids the unstable problem of reversed polarity AlGaInP quaternary LED chip roughening effect, increases
Light extraction efficiency improves the quality of chip.It can be by N-type by the coarsening solution of conventional ICP etching and configuration phosphoric acid, hydrochloric acid
AlGaInP, which is roughened, can also remove the heavily doped layer residual particles in heavily doped layer, easy to operate and can obtain more stable thick
Change surface, is suitble to large-scale production.
Detailed description of the invention
Fig. 1 is the cross-sectional view of tetra- element chip of reversed polarity LED made of the present invention；
Fig. 2 is the cross-sectional view of tetra- element chip of reversed polarity LED made of step a) of the present invention；
Fig. 3 is the cross-sectional view of tetra- element chip of reversed polarity LED made of step b) of the present invention；
Fig. 4 is the cross-sectional view of tetra- element chip of reversed polarity LED made of step c) of the present invention；
In figure, 1. substrates, 4. heavily doped layers of 2. bonded layers, epitaxial layer 3.N type AlGaInP layer roughening protection figure of 5.GeAu film 6.
7. heavily doped layers of residual particles of shape.
Specific embodiment
1 to attached drawing 4, the present invention will be further described with reference to the accompanying drawing.
A kind of method of roughening of reversed polarity AlGaInP quaternary LED chip, includes the following steps:
A) the AlGaInP quaternary LED chip with substrate 1 and bonded layer, epitaxial layer 2 that bonding is completed erodes GaAs substrate,
And the barrier layer GaInP of epitaxial growth is eroded, as shown in Fig. 2.
It b) will be by being deposited one layer by electron beam evaporation plating mode in step a) treated AlGaInP quaternary LED chip
GeAu film 5 applies positive photoresist in the GeAu film surface, obtains Ohm contact electrode figure by optical graving.Such as 3 institute of attached drawing
Show.
C) positive photoresist is removed, the face N Ohmic contact pattern is made.
D) positive photoresist is being applied by treated the AlGaInP quaternary LED chip surface step c), is being obtained by optical graving
Roughening protection figure 6.
E) it is etched by ICP and the heavily doped layer 4 of AlGaInP quaternary LED chip coarsening-free protection zone is removed and etched into
N-type AlGaInP layer 3 forms N-type roughened layer, as shown in Fig. 4.
F) wet process roughening is carried out to N-type AlGaInP layer 3, removes positive photoresist, N-type AlGaInP coarse surface is made,
As shown in Fig. 1,.
Substrate, barrier layer whole erosion removal by the AlGaInP quaternary LED chip for first completing bonding, then in table
Upper one layer of GeAu film is deposited as N-type Ohm contact electrode in face, then prepares roughening protection figure on surface, passes through roughening protection figure
The effect of shape 6 carries out the N-type AlGaInP layer 3 that coarsening-free is protected at roughing in surface by way of ICP etching, wet process roughening
Reason avoids the unstable problem of reversed polarity AlGaInP quaternary LED chip roughening effect, increases light extraction efficiency, improve core
The quality of piece.N-type AlGaInP can be roughened by the coarsening solution of conventional ICP etching and configuration phosphoric acid, hydrochloric acid
Heavily doped layer residual particles 7 in heavily doped layer 4 can be removed, it is easy to operate and more stable coarse surface can be obtained, it is suitble to scale
Metaplasia produces.
Embodiment 1:
It is further preferred that corrosive liquid when GaAs substrate etching is handled in step a) is the mixed liquor of ammonium hydroxide, hydrogen peroxide, water,
Ammonium hydroxide in the mixed liquor: hydrogen peroxide: the volume ratio of water is 1:2:6.
Embodiment 2:
It is further preferred that GaInP corrosive liquid is hydrochloric acid: water volume ratio 5 in step a) when barrier layer GaInP corrosion treatment:
3 solution.
Embodiment 3:
It is further preferred that in step a) the GaAs substrate etching time be 20-40 minute, GaInP etching time for 1 point 30 seconds -3
Minute.
Embodiment 4:
It is further preferred that the AlGaInP quaternary LED chip in the step a) is put into pure water after eroding GaAs substrate
It is rinsed, is placed into after rinsing well in GaInP corrosive liquid and erode GaInP.
Embodiment 5:
It is further preferred that in step b) in GeAu film Ge with a thickness of 0.01-0.02 μm, Au with a thickness of 0.4-0.55 μm.
Coating temperature is 150-250 DEG C in GeAu in step b).
Embodiment 6:
It is further preferred that in step b) GeAu film surface apply positive photoresist with a thickness of 0.9-1.8 μm, in step d)
AlGaInP quaternary LED chip surface apply positive photoresist with a thickness of 3.5-4.5 μm.
Embodiment 7:
It is further preferred that in step f) the step of N-type AlGaInP layers of progress wet process roughening are as follows:
F1 the hydrochloric acid and pure water that the phosphoric acid for the use of mass concentration being) 96%, mass concentration are 36.5% according to volume ratio be 1:3:5 or
The proportional arrangement coarsening solution of 2:5:10；
F2) AlGaInP quaternary LED chip is put into AlGaInP layers of the N-type of exposing coarsening-free protection zone in coarsening solution into
Row roughening, and be removed remaining heavily doped layer particle by the effect of phosphoric acid, then remove positive photoresist and obtain N-type
AlGaInP coarse surface.
Embodiment 8:
It is further preferred that in step f) wet process be roughened temperature be 28-36 DEG C, the time be 1 point 30 seconds -2 points 30 seconds.
Claims (10)
1. a kind of method of roughening of reversed polarity AlGaInP quaternary LED chip, which comprises the steps of:
A) the AlGaInP quaternary LED chip that bonding is completed erodes GaAs substrate, and erodes the barrier layer of epitaxial growth
GaInP；
It b) will be by one layer of GeAu be deposited by electron beam evaporation plating mode in step a) treated AlGaInP quaternary LED chip
Film applies positive photoresist in the GeAu film surface, obtains Ohm contact electrode figure by optical graving；
C) positive photoresist is removed, the face N Ohmic contact pattern is made；
D) positive photoresist is being applied by treated the AlGaInP quaternary LED chip surface step c), must be roughened by optical graving
Protect figure；
E) it is etched by ICP and the heavily doped layer of AlGaInP quaternary LED chip coarsening-free protection zone is removed and etches into N-type
AlGaInP layers, form N-type roughened layer；
F) to AlGaInP layers of progress wet process roughening of N-type, positive photoresist is removed, N-type AlGaInP coarse surface is made.
2. the method for roughening of reversed polarity AlGaInP quaternary LED chip according to claim 1, it is characterised in that: step a)
The corrosive liquid when processing of middle GaAs substrate etching is the mixed liquor of ammonium hydroxide, hydrogen peroxide, water, ammonium hydroxide in the mixed liquor: hydrogen peroxide:
The volume ratio of water is 1:2:6.
3. the method for roughening of reversed polarity AlGaInP quaternary LED chip according to claim 1, it is characterised in that: step a)
When middle barrier layer GaInP corrosion treatment, GaInP corrosive liquid is hydrochloric acid: water volume ratio is the solution of 5:3.
4. the method for roughening of reversed polarity AlGaInP quaternary LED chip according to claim 1, it is characterised in that: step a)
The middle GaAs substrate etching time be 20-40 minute, GaInP etching time for 1 point -3 minutes 30 seconds.
5. the method for roughening of reversed polarity AlGaInP quaternary LED chip as claimed in any of claims 1 to 4, special
Sign is: the AlGaInP quaternary LED chip in the step a) is put into pure water after eroding GaAs substrate to be rinsed,
It is placed into after rinsing well in GaInP corrosive liquid and erodes GaInP.
6. the method for roughening of reversed polarity AlGaInP quaternary LED chip according to claim 1, it is characterised in that: step b)
In middle GeAu film Ge with a thickness of 0.01-0.02 μm, Au with a thickness of 0.4-0.55 μm.
7. the method for roughening of reversed polarity AlGaInP quaternary LED chip according to claim 1, it is characterised in that: step b)
Coating temperature is 150-250 DEG C in middle GeAu.
8. the method for roughening of reversed polarity AlGaInP quaternary LED chip according to claim 1, it is characterised in that: step b)
Middle GeAu film surface apply positive photoresist with a thickness of 0.9-1.8 μm, AlGaInP quaternary LED chip surface applies just in step d)
Property photoresist with a thickness of 3.5-4.5 μm.
9. the method for roughening of reversed polarity AlGaInP quaternary LED chip according to claim 1, it is characterised in that: step f)
The step of middle N-type AlGaInP layers of progress wet process roughening are as follows:
F1 the hydrochloric acid and pure water that the phosphoric acid for the use of mass concentration being) 96%, mass concentration are 36.5% according to volume ratio be 1:3:5 or
The proportional arrangement coarsening solution of 2:5:10；
F2) AlGaInP quaternary LED chip is put into AlGaInP layers of the N-type of exposing coarsening-free protection zone in coarsening solution into
Row roughening, and be removed remaining heavily doped layer particle by the effect of phosphoric acid, then remove positive photoresist and obtain N-type
AlGaInP coarse surface.
10. the method for roughening of reversed polarity AlGaInP quaternary LED chip according to claim 9, it is characterised in that: step
F) in wet process be roughened temperature be 28-36 DEG C, the time be 1 point 30 seconds -2 points 30 seconds.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
| CN111162155A (en) * | 2020-01-03 | 2020-05-15 | 深圳市奥伦德元器件有限公司 | Power improving method for infrared LED chip made of gallium-aluminum-arsenic material |
| CN117438515A (en) * | 2023-12-21 | 2024-01-23 | 江西乾照半导体科技有限公司 | LED chip roughening method and LED chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060186424A1 (en) * | 2005-02-10 | 2006-08-24 | Akira Fujimoto | White LED and manufacturing method therefor |
| CN103966605A (en) * | 2014-05-30 | 2014-08-06 | 马鞍山太时芯光科技有限公司 | Etching liquid, etching method and surface roughening method for GaP layer of LED chip |
| CN104979444A (en) * | 2014-04-14 | 2015-10-14 | 厦门乾照光电股份有限公司 | Four-element system light emitting diode with electrode protection area, and manufacturing method |
| US9230818B2 (en) * | 2006-02-02 | 2016-01-05 | Trustees Of Boston University | Planarization of GaN by photoresist technique using an inductively coupled plasma |
| CN206003793U (en) * | 2016-08-24 | 2017-03-08 | 扬州乾照光电有限公司 | A kind of copper base high brightness AlGaInP light emitting diode |
-
2017
- 2017-11-07 CN CN201711081003.2A patent/CN109755367B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060186424A1 (en) * | 2005-02-10 | 2006-08-24 | Akira Fujimoto | White LED and manufacturing method therefor |
| US9230818B2 (en) * | 2006-02-02 | 2016-01-05 | Trustees Of Boston University | Planarization of GaN by photoresist technique using an inductively coupled plasma |
| CN104979444A (en) * | 2014-04-14 | 2015-10-14 | 厦门乾照光电股份有限公司 | Four-element system light emitting diode with electrode protection area, and manufacturing method |
| CN103966605A (en) * | 2014-05-30 | 2014-08-06 | 马鞍山太时芯光科技有限公司 | Etching liquid, etching method and surface roughening method for GaP layer of LED chip |
| CN206003793U (en) * | 2016-08-24 | 2017-03-08 | 扬州乾照光电有限公司 | A kind of copper base high brightness AlGaInP light emitting diode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
| CN111162155A (en) * | 2020-01-03 | 2020-05-15 | 深圳市奥伦德元器件有限公司 | Power improving method for infrared LED chip made of gallium-aluminum-arsenic material |
| CN117438515A (en) * | 2023-12-21 | 2024-01-23 | 江西乾照半导体科技有限公司 | LED chip roughening method and LED chip |
| CN117438515B (en) * | 2023-12-21 | 2024-03-29 | 江西乾照半导体科技有限公司 | LED chip roughening method and LED chip |
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