CN110071198A - A kind of light-emitting component and preparation method thereof, array substrate - Google Patents
A kind of light-emitting component and preparation method thereof, array substrate Download PDFInfo
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- CN110071198A CN110071198A CN201910307712.0A CN201910307712A CN110071198A CN 110071198 A CN110071198 A CN 110071198A CN 201910307712 A CN201910307712 A CN 201910307712A CN 110071198 A CN110071198 A CN 110071198A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
This application involves a kind of light-emitting component and preparation method thereof, array substrate, the production method of the light-emitting component includes: offer underlay substrate；Production is less than the luminescence unit of pre-set dimension on underlay substrate；Processing of deactivating is carried out to the side of luminescence unit.In this way, to improve the edge current leakage and edge non-radiative recombination phenomenon of the micro- light-emitting diode chip of small size, and then luminous efficiency is improved.
Description
[technical field]
This application involves field of display technology, and in particular to a kind of light-emitting component and preparation method thereof, array substrate.
[background technique]
Micro- LED displays (Micro LED Display) are the display technology of a new generation, and structure is micromation
LED array, that is, LED structure is designed and carries out filming, microminiaturization and array, making its volume is about current mainstream LED
The 1% of size, each pixel can addressing, be operated alone luminous, the distance of pixel is dropped to by the grade of script micro-
Meter level.Micro- LED displays have adopted as heir the characteristic of LED, and there is low-power consumption, high brightness, ultrahigh resolution and color to be saturated
Degree, reaction speed be fast, super power saving, lasts a long time, the advantages that efficiency is higher.
But in micro- LED displays technology, since chip size becomes smaller, and the micro- light-emitting diode of small size
The edge current leakage and edge non-radiative recombination phenomenon of chip will lead to the luminous efficiency of micro- light-emitting diode chip than more significant
It is decreased obviously.
[summary of the invention]
The application's is designed to provide a kind of light-emitting component and preparation method thereof, array substrate, micro- to improve small size
The edge current leakage and edge non-radiative recombination phenomenon of light-emitting diode chip, and then improve luminous efficiency.
To solve the above-mentioned problems, the embodiment of the present application provides a kind of production method of light-emitting component, the light-emitting component
Production method include: offer underlay substrate；Production is less than the luminescence unit of pre-set dimension on underlay substrate；To luminescence unit
Side carry out processing of deactivating.
Wherein, the step of handling of deactivating is carried out to the side of luminescence unit, specifically included: to the side of luminescence unit into
The wet etching of row preset duration.
Wherein, the step of handling of deactivating is carried out to the side of luminescence unit, specifically included: to the side of luminescence unit into
Row annealing, and annealing temperature is not less than preset temperature.
Wherein, the step of handling of deactivating is carried out to the side of luminescence unit, specifically included: on the side of luminescence unit
Cover one layer of passivating film.
Wherein, it the step of production is less than the luminescence unit of pre-set dimension on underlay substrate, specifically includes: in underlay substrate
On, sequentially form n-type gallium nitride layer, quantum well layer and p-type gallium nitride layer；P-type gallium nitride layer, quantum well layer and N-shaped are nitrogenized
Gallium layer performs etching, to form the luminescence unit that at least one is less than pre-set dimension.
Wherein, p-type gallium nitride layer, quantum well layer and n-type gallium nitride layer are performed etching, is less than in advance with forming at least one
If the step of luminescence unit of size, specifically including: by dry etching, removing p-type gallium nitride layer, the Quantum Well of predeterminable area
Layer and n-type gallium nitride layer, to form multiple mesa structures less than pre-set dimension and between two neighboring mesa structure
Cut channel, wherein the width of n-type gallium nitride layer is greater than the width and platform of p-type gallium nitride layer in mesa structure in mesa structure
The width of quantum well layer in the structure of face；After the side to luminescence unit deactivate the step of handling, further includes: in platform
First electrode is made on the p-type gallium nitride layer of face structure, and makes second electrode in the n-type gallium nitride layer of mesa structure；Base
Underlay substrate is cut in cutting channel, forms a plurality of light-emitting elements.
To solve the above-mentioned problems, the embodiment of the present application also provides a kind of light-emitting component, the light-emitting components, comprising: lining
Substrate；Less than the luminescence unit of pre-set dimension, luminescence unit is set on underlay substrate, and the side of luminescence unit was through the past
It is activated.
Wherein, light-emitting component further includes passivating film, and passivating film covers side.
Wherein, luminescence unit is mesa structure, and mesa structure includes the successively n-type gallium nitride layer far from underlay substrate, amount
Sub- well layer and p-type gallium nitride layer, and the width of n-type gallium nitride layer is greater than the width of quantum well layer and the width of p-type gallium nitride layer；
Light-emitting component further include: first electrode, first electrode are located on p-type gallium nitride layer；Second electrode, second electrode are located at N-shaped nitrogen
Change on gallium layer.
To solve the above-mentioned problems, the embodiment of the present application also provides a kind of array substrate, which includes above-mentioned
Any one light-emitting component and control circuit electrically connected with light-emitting component.
The beneficial effect of the application is: being different from the prior art, the production method of light-emitting component provided by the present application passes through
Production is less than the luminescence unit of pre-set dimension on underlay substrate, and carries out processing of deactivating to the side of luminescence unit, can
The defect and dangling bonds of side are reduced, and then the edge current leakage of the improvement micro- light-emitting diode chip of small size and edge are non-radiative multiple
Phenomenon is closed, to improve luminous efficiency.
[Detailed description of the invention]
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the flow diagram of the production method of light-emitting component provided by the embodiments of the present application；
Fig. 2 is the flow diagram of S12 in Fig. 1；
Fig. 3 is another flow diagram of the production method of light-emitting component provided by the embodiments of the present application；
Fig. 4 is another flow diagram of the production method of light-emitting component provided by the embodiments of the present application；
Fig. 5 is another flow diagram of the production method of light-emitting component provided by the embodiments of the present application；
Fig. 6 is another flow diagram of the production method of light-emitting component provided by the embodiments of the present application；
Fig. 7 is the structural schematic diagram of light-emitting component provided by the embodiments of the present application；
Fig. 8 is another structural schematic diagram of light-emitting component provided by the embodiments of the present application；
Fig. 9 is another structural schematic diagram of light-emitting component provided by the embodiments of the present application；
Figure 10 is the structural schematic diagram of array substrate provided by the embodiments of the present application.
[specific embodiment]
With reference to the accompanying drawings and examples, the application is described in further detail.It is emphasized that following implement
Example is merely to illustrate the application, but is not defined to scope of the present application.Likewise, following embodiment is only the portion of the application
Point embodiment and not all embodiments, institute obtained by those of ordinary skill in the art without making creative efforts
There are other embodiments, shall fall in the protection scope of this application.
Currently, in micro- LED displays technology, since chip size becomes smaller, and the micro- light-emitting diode of small size
The edge current leakage and edge non-radiative recombination phenomenon of chip will lead to the luminous efficiency of micro- light-emitting diode chip than more significant
It is decreased obviously.In order to solve the above-mentioned technical problem, the application is the technical solution adopted is that provide a kind of production side of light-emitting component
Method improves luminous efficiency to improve the edge current leakage and edge non-radiative recombination phenomenon of the micro- light-emitting diode chip of small size.
Referring to Fig. 1, Fig. 1 is the flow diagram of the production method of light-emitting component provided by the embodiments of the present application, the hair
The production method detailed process of optical element can be such that
S11: underlay substrate is provided.
Wherein, the material of underlay substrate can be sapphire, silicon carbide, silicon, GaAs, zinc oxide etc..
S12: production is less than the luminescence unit of pre-set dimension on underlay substrate.
For example, manufactured size is in 100 microns of luminescence units below on underlay substrate.
In one embodiment, as shown in Fig. 2, S12 can be specifically included:
S121: on underlay substrate, n-type gallium nitride layer, quantum well layer and p-type gallium nitride layer are sequentially formed.
For example, using the method for metal-organic chemical vapor deposition equipment (MOCVD), first epitaxial growth on a sapphire substrate
Gallium nitride transition zone is obtained, then successively epitaxial growth obtains n-type gallium nitride layer, quantum well layer and p on gallium nitride transition zone
Type gallium nitride layer.
Wherein, quantum well layer may include that the InGaN well layer of alternating growth and GaN barrier layer, alternate cycle can control
7-15.
S122: performing etching p-type gallium nitride layer, quantum well layer and n-type gallium nitride layer, is less than in advance with forming at least one
If the luminescence unit of size.
For example, being nitrogenized along the direction of p-type gallium nitride layer to n-type gallium nitride layer to p-type gallium nitride layer, quantum well layer and N-shaped
Gallium layer carries out photoetching, dry etching and cleaning and removes photoresist, to obtain luminescence unit of at least one size less than 100 μm, wherein
The width of n-type gallium nitride layer is equal to or more than the width of p-type gallium nitride layer in luminescence unit in luminescence unit.
In a specific embodiment, S122 can be specifically included:
By the method for dry etching, remove p-type gallium nitride layer, quantum well layer and the n-type gallium nitride layer of predeterminable area, with
Form multiple mesa structures less than pre-set dimension and the cutting channel between two neighboring mesa structure, wherein table top
The width of n-type gallium nitride layer is greater than in mesa structure quantum well layer in the width and mesa structure of p-type gallium nitride layer in structure
Width, so that the regional area for the n-type gallium nitride layer being located at below p-type gallium nitride layer is exposed, in order to light-emitting component
Follow-up process, such as production electrode etc..
S13: processing of deactivating is carried out to the side of luminescence unit.
Specifically, above-mentioned p-type gallium nitride layer, quantum well layer and n-type gallium nitride layer are being separated at least one less than pre-
If during the luminescence unit of size, the side of luminescence unit can generate dangling bonds and defect.
In the present embodiment, light-emitting component can be Micro LED chip, and the size of corresponding luminescence unit is usually less than
50μm.Compared with the LED chip of stock size (1-10mm), the size of Micro LED chip becomes smaller, and the edge effect of chip is convex
It is aobvious.Therefore, luminescence unit is due to edge current leakage and non-radiative recombination phenomenon meeting caused by its side existing defects and dangling bonds
Than more significant, and then the electrology characteristic and luminous efficiency of the Micro LED chip seriously affected.
In the present embodiment, in order to improve the edge effect of Micro LED chip, pass through the side to luminescence unit and carry out
It deactivates processing, to reduce the defect and dangling bonds of side, and then improves the luminous efficiency of Micro LED chip.
In one embodiment, as shown in figure 3, S13 can be specifically included:
S131: the wet etching of preset duration is carried out to the side of luminescence unit.
Wherein, acid etching solutions and the potassium hydroxide such as hydrofluoric acid (HF), nitric acid (HNO3) can be used in corrosive liquid
(KOH), the alkaline corrosions liquid such as sodium hydroxide (NaOH).
Specifically, when luminescence unit is put into the wet etching for carrying out preset duration in corrosive liquid, should guarantee
The defect and dangling bonds on luminescence unit side are reduced, guaranteeing again will not p-type gallium nitride in overly corrosive luminescence unit
Layer, quantum well layer and n-type gallium nitride layer.It is therefore desirable to select the corrosive liquid and control corrosion rate for the corrosion strength for having certain
Duration, for example, the potassium hydroxide aqueous solution for the use of mass fraction being 30%, etching time 1 second.
In another embodiment, as shown in figure 4, S13 can be specifically included:
S132: making annealing treatment the side of luminescence unit, and annealing temperature is not less than preset temperature.
For example, annealing temperature can be 500 DEG C, the time is 3~5 minutes.
Specifically, the material being located on luminescence unit side is heated above to the temperature of critical point, so that luminescence unit
Material on side recrystallizes, in this way, can be realized the roughening of crystal grain on luminescence unit side, in turn when high annealing
The defect and dangling bonds on side can be reduced.
In yet another embodiment, as shown in figure 5, S13 can be specifically included:
S133: one layer of passivating film is covered on the side of luminescence unit.
Wherein, the material of passivating film can be silicon nitride, silica, the inorganic material such as aluminum oxide.For example, sending out
One layer of silicon nitride film is deposited on the side of light unit.
Specifically, one layer of passivating film is covered on the side of luminescence unit, can repair the defect on luminescence unit side,
And the chemical bond in passivating film can be in conjunction with the dangling bonds on luminescence unit side, in this way, to reduce the defect on side
And dangling bonds.
It is worth noting that, above-mentioned S131, S132 and S133 not only can individually be implemented, implementation can also be combined, to subtract
Defect and dangling bonds on few luminescence unit side, and then the edge current leakage of improvement Micro LED chip and edge are non-radiative multiple
Phenomenon is closed, luminous efficiency is improved.Also, using two or three of scheme in S131, S132 and S133 as when combination implementation pairs
The improvement of Micro LED chip edge effect, when individually implementing than scheme any in S131, S132 and S133 pair
The improvement of Micro LED chip edge effect is more preferably.
Further, when implementing two or three of scheme in S131, S132 and S133 as combination, S131, S132
It is first S131 S133 after S132 again with the execution of S133 sequence, more efficiently to reduce the defect on luminescence unit side and outstanding
Dead key, and then improve the edge current leakage and edge non-radiative recombination phenomenon of Micro LED chip, improve luminous efficiency.For example,
S13 can specifically include the S131 and S132 successively executed, the S131 and S133 that perhaps successively execute or successively execute
S132 and S133, or S131, S132 and S133 for successively executing.
In a specific embodiment, as shown in fig. 6, S12 includes above-mentioned S121 and S122, and S122 specifically: pass through
The method of dry etching removes p-type gallium nitride layer, quantum well layer and the n-type gallium nitride layer of predeterminable area, to form multiple be less than
The mesa structure of pre-set dimension and the cutting channel between two neighboring mesa structure, wherein N-shaped nitrogenizes in mesa structure
The width of gallium layer is greater than the width of quantum well layer in the width and mesa structure of p-type gallium nitride layer in mesa structure, and S13 includes upper
S131, S132 and S133 are stated, and after S13, can also include:
S14: first electrode is made on the p-type gallium nitride layer of mesa structure, and in the n-type gallium nitride layer of mesa structure
Make second electrode.
For example, using the method for electron beam evaporation, deposited on the p-type gallium nitride layer of mesa structure chromium or aluminum metal layer with
First electrode is formed, and deposits nickel or silver metal layer in the n-type gallium nitride layer of mesa structure to form second electrode.
S15: underlay substrate is cut based on cutting channel, forms a plurality of light-emitting elements.
For example, first can carry out reduction processing before being cut to underlay substrate to underlay substrate, be then based on and be located at
Cutting channel between two neighboring mesa structure is cut by laser the underlay substrate after being thinned, to obtain as shown in Figure 9
Light-emitting component.
It is different from the prior art, the production method of light-emitting component provided in this embodiment, by being made on underlay substrate
Carry out processing of deactivating less than the luminescence unit of pre-set dimension, and to the side of luminescence unit, can reduce side defect and
Dangling bonds, and then improve the edge current leakage and edge non-radiative recombination phenomenon of the micro- light-emitting diode chip of small size, to improve hair
Light efficiency.
Referring to Fig. 7, Fig. 7 is the structural schematic diagram of light-emitting component provided by the embodiments of the present application.As shown in fig. 7, the hair
Optical element 70 includes underlay substrate 71 and the luminescence unit 72 less than pre-set dimension, wherein luminescence unit 72 is set to substrate
On substrate 71, and the side 72A of luminescence unit 72 is by processing of deactivating.
In the present embodiment, light-emitting component 70 can be Micro LED chip, and the size of corresponding luminescence unit 72 is usual
Less than 50 μm.Compared with the LED chip of stock size (1-10mm), the size of Micro LED chip becomes smaller, the edge effect of chip
It should highlight.Therefore, luminescence unit 72 is due to edge current leakage caused by its side 72A existing defects and dangling bonds and non-radiative multiple
Closing phenomenon can be than more significant, the luminous efficiency of the Micro LED chip seriously affected.
In the present embodiment, in order to improve the edge effect of Micro LED chip, pass through the side to luminescence unit 72
72A carries out processing of deactivating, and to reduce the defect and dangling bonds of side 72A, and then improves the luminous effect of Micro LED chip
Rate.
Specifically, the side 72A of luminescence unit 72 deactivate the method for processing, comprising: to luminescence unit 72
The wet etching of side 72A progress preset duration；The high temperature anneal is carried out to the side 72A of luminescence unit 72；And it is sending out
One layer of passivating film etc. is covered on the side 72A of light unit 72.Wherein, the specific implementation of the method for above-mentioned various processing of deactivating can
With referring to the embodiment of front, details are not described herein.
In one embodiment, with continued reference to Fig. 7, luminescence unit 72 is mesa structure, and mesa structure 72 includes successively remote
N-type gallium nitride layer 721, quantum well layer 722 and p-type gallium nitride layer 723 from underlay substrate 71, and the width of n-type gallium nitride layer 721
Degree is greater than the width of quantum well layer 722 and the width of p-type gallium nitride layer 723, in this way, to be located at 723 lower section of p-type gallium nitride layer
The regional area of n-type gallium nitride layer 721 be exposed, in order to follow-up process of light-emitting component 70, such as production electrode etc..
Wherein, the material of underlay substrate 71 can be sapphire, silicon carbide, silicon, GaAs, zinc oxide etc..Quantum well layer 722 can wrap
The InGaN well layer and GaN barrier layer of alternating growth are included, alternate cycle can control at 7~15.
Further, referring to Fig. 8, light-emitting component 70 can also include first electrode 73 and second electrode 74, wherein the
One electrode 73 is located on p-type gallium nitride layer 723, and second electrode 74 is located in n-type gallium nitride layer 721.Wherein, first electrode 73 can
Think chromium or aluminum metal layer, second electrode 74 can be nickel or silver metal layer.
In a specific embodiment, referring to Fig. 9, light-emitting component 70 further includes passivating film 75, passivating film 75 covers side
Face 72A.Wherein, the material of passivating film 75 can be silicon nitride, silica, the inorganic material such as aluminum oxide.
Specifically, it is formed before passivating film 75 on the side 72A of luminescence unit 72, it can be to the side of luminescence unit 72
72A carries out wet etching or the high temperature anneal, alternatively, first carrying out wet etching to the side 72A of luminescence unit 72, then right
The side 72A of luminescence unit 72 carries out the high temperature anneal, in this way, more efficiently to reduce on the 72A of luminescence unit side
Defect and dangling bonds, and then improve the edge current leakage and edge non-radiative recombination phenomenon of Micro LED chip, improve the effect that shines
Rate.
It is different from the prior art, light-emitting component provided in this embodiment, is less than default ruler by making on underlay substrate
Very little luminescence unit, and processing of deactivating is carried out to the side of luminescence unit, the defect and dangling bonds of side can be reduced, in turn
Improve the edge current leakage and edge non-radiative recombination phenomenon of the micro- light-emitting diode chip of small size, to improve luminous efficiency
Referring to Fig. 10, Figure 10 is the structural schematic diagram of array substrate provided by the embodiments of the present application.As shown in Figure 10, should
Array substrate 90 includes light-emitting component 91 and the control circuit being electrically connected with light-emitting component 91.
Specifically, light-emitting component 91 includes underlay substrate and the luminescence unit less than pre-set dimension, wherein is shone single
Member is set on underlay substrate, and the side of luminescence unit is by processing of deactivating.
It is different from the prior art, array substrate provided in this embodiment, is less than default ruler by making on underlay substrate
Very little luminescence unit, and processing of deactivating is carried out to the side of luminescence unit, the defect and dangling bonds of side can be reduced, in turn
Improve the edge current leakage and edge non-radiative recombination phenomenon of the micro- light-emitting diode chip of small size, to improve luminous efficiency.
The foregoing is merely the preferred embodiments of the application, not to limit the application, all essences in the application
Made any modifications, equivalent replacements, and improvements etc., should be included within the scope of protection of this application within mind and principle.
Claims (10)
1. a kind of production method of light-emitting component characterized by comprising
Underlay substrate is provided；
Production is less than the luminescence unit of pre-set dimension on the underlay substrate；
Processing of deactivating is carried out to the side of the luminescence unit.
2. manufacturing method according to claim 1, which is characterized in that carry out place of deactivating to the side of the luminescence unit
The step of reason, specifically includes:
The wet etching of preset duration is carried out to the side of the luminescence unit.
3. manufacturing method according to claim 1, which is characterized in that carry out place of deactivating to the side of the luminescence unit
The step of reason, specifically includes:
The side of the luminescence unit is made annealing treatment, and annealing temperature is not less than preset temperature.
4. manufacturing method according to claim 1, which is characterized in that carry out place of deactivating to the side of the luminescence unit
The step of reason, specifically includes:
One layer of passivating film is covered on the side of the luminescence unit.
5. manufacturing method according to claim 1, which is characterized in that production is less than pre-set dimension on the underlay substrate
Luminescence unit the step of, specifically include:
On the underlay substrate, n-type gallium nitride layer, quantum well layer and p-type gallium nitride layer are sequentially formed；
The p-type gallium nitride layer, the quantum well layer and the n-type gallium nitride layer are performed etching, it is small to form at least one
In the luminescence unit of pre-set dimension.
6. production method according to claim 5, which is characterized in that the p-type gallium nitride layer, the quantum well layer and
The n-type gallium nitride layer performs etching, with formed at least one be less than pre-set dimension luminescence unit the step of, specifically include:
By dry etching, remove the p-type gallium nitride layer, the quantum well layer and the n-type gallium nitride layer of predeterminable area,
To form multiple mesa structures less than pre-set dimension and the cutting channel between the two neighboring mesa structure,
In, the width of n-type gallium nitride layer described in the mesa structure is greater than the width of p-type gallium nitride layer described in the mesa structure
With the width of quantum well layer described in the mesa structure；
After the side to the luminescence unit deactivate the step of handling, further includes:
First electrode is made on the p-type gallium nitride layer of the mesa structure, and in the N-shaped nitrogen of the mesa structure
Change and makes second electrode on gallium layer；
The underlay substrate is cut based on the cutting channel, forms a plurality of light-emitting elements.
7. a kind of light-emitting component characterized by comprising
Underlay substrate；
Less than the luminescence unit of pre-set dimension, the luminescence unit is set on the underlay substrate, and the luminescence unit
Side is by processing of deactivating.
8. light-emitting component according to claim 7, which is characterized in that the light-emitting component further includes passivating film, described blunt
Change film and covers the side.
9. light-emitting component according to claim 7, which is characterized in that the luminescence unit is mesa structure, the table top
Structure includes n-type gallium nitride layer, quantum well layer and the p-type gallium nitride layer successively far from the underlay substrate, and the N-shaped nitrogenizes
The width of gallium layer is greater than the width of the quantum well layer and the width of the p-type gallium nitride layer；
The light-emitting component further include:
First electrode, the first electrode are located on the p-type gallium nitride layer；
Second electrode, the second electrode are located in the n-type gallium nitride layer.
10. a kind of array substrate, which is characterized in that including the described in any item light-emitting components of claim 7-9 and with it is described
The control circuit of light-emitting component electrical connection.
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| CN201910307712.0A CN110071198B (en) | 2019-04-17 | 2019-04-17 | Light-emitting element, manufacturing method thereof and array substrate |
| PCT/CN2019/087753 WO2020211145A1 (en) | 2019-04-17 | 2019-05-21 | Light-emitting element and manufacturing method thereof, and array substrate |
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| CN111446335A (en) * | 2020-03-24 | 2020-07-24 | 京东方科技集团股份有限公司 | Light emitting diode and preparation method thereof |
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Also Published As
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| CN110071198B (en) | 2021-06-01 |
| WO2020211145A1 (en) | 2020-10-22 |
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