CN110676357A - Ultra-thin structure deep ultraviolet LED and preparation method thereof - Google Patents
Ultra-thin structure deep ultraviolet LED and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 18
- 239000010980 sapphire Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 9
- 238000000227 grinding Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000007517 polishing process Methods 0.000 claims abstract description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 16
- 238000000034 method Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011265 semifinished product Substances 0.000 claims description 4
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000005286 illumination Methods 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 33
- 229910002601 GaN Inorganic materials 0.000 description 31
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000000504 luminescence detection Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract
The invention discloses an ultra-thin structure deep ultraviolet LED and a preparation method thereof, wherein the ultra-thin structure deep ultraviolet LED is a deep ultraviolet LED with the total thickness of less than 600nm, and is prepared by sequentially arranging an n-type AlGaN layer, a quantum well layer, a p-type electron barrier layer and a p-type GaN layer from top to bottom. The preparation method of the ultra-thin structure deep ultraviolet LED comprises the following steps: firstly, defining a device by photoetching, exposing a doped n-type AlGaN layer by etching, and secondly, growing SiO2The LED structure is formed by bonding an LED device and a new substrate together through flip-chip bonding, then the sapphire substrate is removed through a laser stripping or grinding polishing process, the AlN buffer layer and the undoped AlGaN layer are further thinned and removed, the doped n-type AlGaN layer is thinned, the total thickness of the residual thinned doped n-type AlGaN layer, the quantum well layer, the p-type electronic barrier layer and the p-type GaN layer is smaller than 600nm, and the ultra-thin structure deep ultraviolet LED is formed. The ultra-thin deep ultraviolet LED can inhibit the waveguide mode in the device and improve the electro-optic conversion of the deviceThe efficiency is improved, the response speed of the device is improved, and the device can be used as a light-emitting device, a detection device and the like in the fields of rate illumination, display and optical communication according to different application requirements.
Description
Technical Field
The invention relates to the technical field of ultrathin structure deep ultraviolet LEDs and preparation thereof, in particular to an ultrathin structure deep ultraviolet LED and a preparation method thereof.
Background
Ultraviolet LEDs based on AlGaN (aluminum gallium nitride) materials are the main trends of the current nitride technology development and the third generation material technology development, and have wide application prospects. Ultraviolet LEDs are used in a wide range of applications, such as air and water purification, disinfection, ultraviolet medicine, high density optical storage systems, full color displays, and solid state white light illumination. Semiconductor ultraviolet light sources have attracted extensive attention in the semiconductor photovoltaic industry as a further major industry behind semiconductor lighting.
However, unlike blue LEDs, currently, ultraviolet LEDs are in the development stage of technology, and some problems that are difficult to break through exist, such as that AlGaN-based ultraviolet LEDs have relatively low internal quantum efficiency and emission power, and complex structures.
Therefore, how to improve the internal quantum efficiency and the emission power of the AlGaN-based ultraviolet LED becomes a problem to be solved urgently.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the ultra-thin structure deep ultraviolet LED which can inhibit a waveguide mode in a device, improve the electro-optic conversion efficiency of the device, improve the response speed of the device, and can be used as a light-emitting device, a detection device and the like in the fields of rate illumination, display and optical communication according to different application requirements, and the preparation method thereof.
The technical scheme adopted by the invention is as follows: the deep ultraviolet LED with the ultrathin structure is a deep ultraviolet LED with the total thickness of less than 600nm, which is prepared by sequentially arranging an n-type AlGaN doped layer, a quantum well layer, a p-type electron barrier layer, a p-type GaN layer and a new substrate from top to bottom.
A preparation method of an ultra-thin structure deep ultraviolet LED comprises the steps of selecting a sapphire substrate 1, an AlN buffer layer 2, a non-doped u-type AlGaN layer 3, a doped n-type AlGaN layer 4, a quantum well layer 5, a p-type electronic barrier layer 6 and a p-type GaN layer 7 from bottom to top of an original wafer, and manufacturing the ultra-thin structure deep ultraviolet LED according to the following steps:
a. etching an original wafer by using a photoetching definition device, etching from a p-type GaN layer to a sapphire substrate direction, and finally etching the original wafer to expose a part of a doped n-type AlGaN layer;
b. growing SiO2 passivation layers on two sides of the top of the exposed doped n-type AlGaN layer and two sides of the top of the un-etched original wafer far away from the sapphire substrate;
c. depositing electrodes among the SiO2 passivation layers of the semi-finished product prepared in the step b, and forming an LED structure wafer;
d. bonding the LED structure wafer obtained in the step c and the new substrate together through flip-chip bonding to obtain a double-substrate LED wafer;
e. removing the sapphire substrate of the original wafer in the double-substrate LED wafer obtained in the step d through a laser stripping or grinding polishing process, and reserving a new bonded substrate;
f. and further removing the AlN buffer layer 2 and the undoped u-type AlGaN layer 3, thinning the doped n-type AlGaN layer, and forming the ultrathin deep ultraviolet LED by using the LED structure with the total thickness of the residual doped n-type AlGaN layer 4, the p-type electron blocking layer 6 and the p-type GaN layer 7 being less than 600 nm.
Further, the number of n doped n-type AlGaN layer 4 is 1 to 3 layers.
Further, when the original wafer is etched in the step a, the length of the doped n-type AlGaN layer to be exposed is one third to one half of the diameter of the original wafer, so as to deposit an n electrode.
Further, when the LED crystal wafer obtained in step c is flip-chip bonded to a new substrate in step d, the electrodeposition region of the LED crystal wafer obtained in step c is bonded to the new substrate through a metal bonding layer, where the new substrate is a silicon substrate or a silicon carbide substrate, and is usually a silicon substrate.
Compared with the prior art, the invention has the beneficial effects that: the ultra-thin structure deep ultraviolet LED is a deep ultraviolet LED with the total thickness of less than 600nm, and is formed by a doped n-type AlGaN layer, a p-type electron blocking layer, a p-type GaN layer and a sapphire substrate which are sequentially arranged from top to bottom. Therefore, more exciting light of the ultra-thin structure deep ultraviolet LED escapes from the device, and the electro-optic conversion efficiency of the ultra-thin structure deep ultraviolet LED is improved. Meanwhile, after the thickness of the ultra-thin structure deep ultraviolet LED is reduced, the resistance of the ultra-thin structure deep ultraviolet LED is correspondingly reduced, and the resistance-capacitance (RC) constant is reduced, so that the response speed of the device is improved. Moreover, after the thickness of the ultra-thin structure deep ultraviolet LED is reduced, the resistance of the ultra-thin structure deep ultraviolet LED is correspondingly reduced, the generated heat effect is also reduced, and the performance of the ultra-thin structure deep ultraviolet LED is further improved.
The invention discloses a preparation method of an ultrathin structure deep ultraviolet LED, which comprises the following steps: firstly, defining a device by photoetching, exposing a doped n-type AlGaN layer by etching, and secondly, growing SiO2And a passivation layer and a deposited electrode form an LED structure, the LED device and the new substrate are bonded together through flip-chip bonding, then the sapphire substrate is removed through a laser stripping or grinding and polishing process, the AlN buffer layer and the undoped u-type AlGaN layer are further thinned and removed, the doped n-type AlGaN layer is thinned, the total thickness of the residual doped n-type AlGaN layer, the p-type electron blocking layer and the p-type GaN layer is less than 600nm, and the ultra-thin structure deep ultraviolet LED is formed.
In conclusion, the ultra-thin deep ultraviolet LED can inhibit a waveguide mode in a device, the resistance is correspondingly reduced, the generated heat effect is also reduced, the electro-optic conversion efficiency of the device is improved, the response speed of the device is improved, and the ultra-thin deep ultraviolet LED can be used as a light emitting device, a detection device and the like in the fields of rate illumination, display and optical communication according to different application requirements.
Drawings
FIG. 1 is a diagram of a ultra-thin deep ultraviolet LED structure;
FIG. 2 is a flow chart of ultra-thin deep ultraviolet LED fabrication;
FIG. 3 is a diagram of a raw wafer;
FIG. 4 is a schematic structural diagram of a sub-wavelength ideal vertical structure LED device;
wherein: the solar cell comprises a 1-sapphire substrate, a 2-AlN buffer layer, a 3-undoped u-type AlGaN layer, a 4-doped n-type AlGaN layer, a 5-quantum well layer, a 6-p-type electron barrier layer, a 7-p-type GaN layer and an 8-new substrate.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
As shown in figure 1, the ultra-thin structure deep ultraviolet LED is a deep ultraviolet LED with the total thickness of less than 600nm, and is formed by sequentially arranging an n-type AlGaN layer 4, a quantum well layer 5, a p-type electron barrier layer 6, a p-type GaN layer 7 and a new substrate 8 from top to bottom. The new substrate 8 is a silicon substrate, a silicon carbide substrate, or a Ni/Sn substrate (nickel-tin substrate), and is referred to as a common new substrate, but not specifically as a new substrate 8. The preferred embodiment is that the number of n doped n-type AlGaN layer 4 is 1-3, which can ensure its better performance.
As shown in detail in fig. 2, in the method for manufacturing the ultra-thin structure deep ultraviolet LED, a sapphire substrate 1, an AlN buffer layer 2, a non-doped u-type AlGaN layer 3, a doped n-type AlGaN layer 4, a quantum well layer 5, a p-type electron blocking layer 6 and a p-type GaN layer 7 are selected from an original wafer from bottom to top, the structure of the original wafer is shown in fig. 3, and the ultra-thin structure deep ultraviolet LED is manufactured according to the following steps:
a. etching an original wafer by using a photoetching definition device, etching from a p-type GaN layer to a sapphire substrate direction, and finally etching the original wafer to expose a part of a doped n-type AlGaN layer;
b. growing SiO2 passivation layers on two sides of the top of the exposed doped n-type AlGaN layer and two sides of the top of the un-etched original wafer far away from the sapphire substrate;
c. depositing electrodes such as electrodes in fig. 2 between the SiO2 passivation layers of the semi-finished product prepared in the step b, and forming an LED structure wafer;
d. bonding the LED structure wafer obtained in the step c and the new substrate together through flip-chip bonding to obtain a double-substrate LED wafer;
e. removing the sapphire substrate of the original wafer in the double-substrate LED wafer obtained in the step d through a laser stripping or grinding polishing process, and reserving a new bonded substrate;
f. and further removing the AlN buffer layer 2 and the undoped u-type AlGaN layer 3, thinning the doped n-type AlGaN layer, and forming the ultrathin deep ultraviolet LED by using the LED structure with the total thickness of the residual doped n-type AlGaN layer 4, the p-type electron blocking layer 6 and the p-type GaN layer 7 being less than 600 nm.
Comprehensively, the ultra-thin structure deep ultraviolet LED selects an original wafer to comprise a sapphire substrate, an AlN buffer layer, a non-doped u-type AlGaN layer, a doped n-type AlGaN layer, a quantum well layer, a p-type electronic barrier layer and a p-type GaN layer from bottom to top. Firstly, defining a device by photoetching, exposing a doped n-type AlGaN layer by etching, and secondly, growing SiO2The LED structure is formed by depositing electrodes on a passivation layer, bonding an LED device and a new substrate together through flip-chip bonding, then removing the sapphire substrate through a laser stripping or grinding and polishing process, further thinning and removing an AlN buffer layer and a non-doped u-type AlGaN layer, thinning and doping an n-type AlGaN layer, and forming the ultra-thin structure deep ultraviolet LED, wherein the total thickness of the residual doped n-type AlGaN layer, a quantum well layer, a p-type electronic barrier layer and a p-type GaN layer is less than 600 nm. The ultra-thin deep ultraviolet LED can inhibit a waveguide mode in a device, improves the electro-optic conversion efficiency of the device, improves the response speed of the device, and can be used in the fields of rate illumination, display and optical communication as a light emitting device, a detection device and the like according to different application requirements.
In the above embodiment, the number of n doped with the n-type AlGaN layer 4 is 1 to 3, which has better usability.
In the above embodiment, when the original wafer etching is performed in step a, the length of the doped n-type AlGaN layer to be exposed is etched to be one third to one half of the diameter of the original wafer, so as to better deposit the n electrode between the SiO2 passivation layer of the semi-finished product obtained in step b, and provide sufficient electron deposition space for the n electrode.
In the above embodiment, when the LED crystal wafer obtained in step c is flip-chip bonded to a new substrate in step d, the electrodeposited region of the LED crystal wafer obtained in step c is bonded to the new substrate through a metal bonding layer (metal in fig. 2), where the new substrate is a silicon substrate or a silicon carbide substrate, and is usually a silicon substrate. The electrode (electrode deposition) adopted by us at present is Ni/Au, and the substrate metal is Ni/Sn, and is used for realizing metal bonding between wafers.
That is to say, in the ultra-thin structure deep ultraviolet LED manufactured by the above method, the total thickness of the selected AlN buffer layer, the undoped u-type AlGaN layer, the doped n-type AlGaN layer, the quantum well layer, the p-type electron blocking layer, and the p-type GaN layer in the original wafer is about 5 micrometers, which is far greater than the light emission wavelength of the ultra-thin deep ultraviolet LED, after the technical route, the thickness of the ultra-thin deep ultraviolet LED only includes the thinned doped n-type AlGaN layer, the quantum well layer, the p-type electron blocking layer, and the p-type GaN layer, and the thickness of the ultra-thin deep ultraviolet LED is less than 600 nm.
The ultra-thin structure deep ultraviolet LED prepared by the method is similar to the sub-wavelength ideal vertical structure LED, and the sub-wavelength ideal vertical structure LED is shown in figure 4, whereind 0 For the original thickness of the epitaxial layers of the LED device,d 1 the thickness of the LED with a vertical structure is shown, lambda is the light-emitting central wavelength of the LED device,V turn-onthe voltage at which the device is turned on,Vthe device is pre-charged.
As seen from FIG. 4, the sub-wavelength ideal vertical structure LED has a silver layer Ag, a metal Bonding layer Bonding metal, a Silicon layer Silicon, and a Cr/Pt/Au layer as an electron deposition layer sequentially bonded to the bottom of p-GaN of a bonded wafer including p-GaN, MQW, n-GaN, u-GaN, and buffer layer, and the overall thickness of the bonded wafer isd 0 At this timed 0 Is far greater thanλ，After the thinning treatment in the step (a), removing the buffer layer and the u-GaN, thinning the n-GaN layer, and keeping the thickness of the p-GaN layer, the MQW layer and the n-GaN layer to be the samed 1， It is composed ofλIs greater thand 1 (ii) a Then, performing electron deposition on the electrode to obtain a film with a thickness ofd 1 When V is the sub-wavelength ideal vertical structure LED>V turn-on The LED device with the ideal sub-wavelength vertical structure has the phenomenon of coexistence of luminescence detection when the device is in a starting luminescence working mode, namely the device can detect external Incident light (Incident) while emitting light, and has the characteristic of duplex transceiving. And the reflected light emittedlight can be reflected from one side of the electrodeposited layer Electrode. The number of the optical waveguide modes is greatly reduced due to the reduction of the thickness of the device, so that the waveguide modes in the ultra-thin deep ultraviolet LED are inhibited, and the ultra-thin structure is improvedThe photoelectric conversion efficiency of the deep ultraviolet LED is improved, and the response speed of the ultrathin deep ultraviolet LED device is improved.
Noun interpretation, in this description and in fig. 4: the p-GaN is the same as the p-type GaN and refers to p-type gallium nitrogen; MQW is quantum well; the n-GaN is the same as the n-type GaN and refers to n-type gallium nitrogen; u-GaN is the same as u-GaN in indication, and refers to u-GaN; buffer layer is also referred to as buffer layer; emittedlight, reflected light; incident light.
The embodiments of the present invention are disclosed as the preferred embodiments, but not limited thereto, and those skilled in the art can easily understand the spirit of the present invention and make various extensions and changes without departing from the spirit of the present invention.
Claims (8)
1. The utility model provides an ultra-thin structure deep ultraviolet LED which characterized in that: the deep ultraviolet LED with the total thickness less than 600nm is made of a doped n-type AlGaN layer (4), a quantum well layer (5), a p-type electron barrier layer (6), a p-type GaN layer (7) and a new substrate (8) which are arranged from top to bottom in sequence.
2. The ultra-thin structured deep ultraviolet LED of claim 1, wherein: the new substrate (8) is a silicon substrate or a silicon carbide substrate or a nickel-tin substrate.
3. The ultra-thin structured deep ultraviolet LED according to claim 1 or 2, characterized in that: the number of n doped with the n-type AlGaN layer (4) is 1-3.
4. A preparation method of an ultrathin structure deep ultraviolet LED is characterized by comprising the following steps: the method comprises the following steps of selecting a sapphire substrate (1), an AlN buffer layer (2), a non-doped u-type AlGaN layer (3), a doped n-type AlGaN layer (4), a quantum well layer (5), a p-type electronic barrier layer (6) and a p-type GaN layer (7) of which the original wafer structure is from bottom to top, and manufacturing the ultra-thin structure deep ultraviolet LED according to the following steps:
etching an original wafer by using a photoetching definition device, etching from a p-type GaN layer to a sapphire substrate direction, and finally etching the original wafer to expose a part of a doped n-type AlGaN layer;
growing SiO on two sides of the top of the exposed doped n-type AlGaN layer and two sides of the top of the un-etched original wafer far away from the sapphire substrate2A passivation layer;
step b, preparing the semi-finished product SiO2Depositing electrodes between the passivation layers and forming an LED structure wafer;
bonding the LED structure wafer obtained in the step c and a new substrate (8) together through flip-chip bonding to obtain a double-substrate LED wafer;
removing the sapphire substrate of the original wafer in the double-substrate LED wafer obtained in the step d through a laser stripping or grinding polishing process, and reserving a new bonded substrate;
and further removing the AlN buffer layer (2) and the undoped u-type AlGaN layer (3), thinning the doped n-type AlGaN layer, and forming the ultra-thin structure deep ultraviolet LED by using the LED structure with the total thickness of the residual doped n-type AlGaN layer (4), the p-type electron blocking layer (6) and the p-type GaN layer (7) being less than 600 nm.
5. The method for preparing the ultra-thin structure deep ultraviolet LED according to claim 4, wherein the method comprises the following steps: the number of n doped with the n-type AlGaN layer (4) is 1-3.
6. The method for preparing the ultra-thin structure deep ultraviolet LED according to claim 4, wherein the method comprises the following steps: and a, etching the doped n-type AlGaN layer to be exposed when the original wafer is etched in the step a.
7. The method for preparing the ultra-thin structure deep ultraviolet LED according to any one of claims 4 to 6, wherein the method comprises the following steps: and d, when the LED obtained in the step c is in flip-chip bonding with the new substrate, bonding the electro-deposition area of the LED crystal wafer obtained in the step c with the new substrate through the metal bonding layer.
8. The method for preparing the ultra-thin structure deep ultraviolet LED according to claim 7, wherein the method comprises the following steps: the new substrate (8) is a silicon substrate or a silicon carbide substrate or a nickel-tin substrate.
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| PCT/CN2019/103628 WO2021035676A1 (en) | 2019-08-28 | 2019-08-30 | Ultra-thin structure deep ultraviolet led and manufacturing method therefor |
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Cited By (3)
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| CN111725361A (en) * | 2020-05-08 | 2020-09-29 | 南京亮芯信息科技有限公司 | Preparation process of deep ultraviolet LED with submicron vertical structure and deep ultraviolet LED prepared by same |
| CN114420800A (en) * | 2021-12-08 | 2022-04-29 | 广州大学 | Deep ultraviolet LED and preparation method thereof |
| CN114551617A (en) * | 2022-01-13 | 2022-05-27 | 华南理工大学 | Single-row carrier photodetector and preparation method thereof |
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| CN103681996A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | UV (Ultraviolet) LED and preparation method thereof |
| US20170179335A1 (en) * | 2014-04-15 | 2017-06-22 | Sensor Electronic Technology, Inc. | Semiconductor Heterostructure with Stress Management |
| CN105679910A (en) * | 2016-01-18 | 2016-06-15 | 华中科技大学 | Deep ultraviolet light emitting diode chip with high luminous efficiency and preparation method thereof |
| CN109841714A (en) * | 2019-01-09 | 2019-06-04 | 南京邮电大学 | Vertical structure near ultraviolet light emitting diode and preparation method thereof |
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| CN111725361A (en) * | 2020-05-08 | 2020-09-29 | 南京亮芯信息科技有限公司 | Preparation process of deep ultraviolet LED with submicron vertical structure and deep ultraviolet LED prepared by same |
| CN114420800A (en) * | 2021-12-08 | 2022-04-29 | 广州大学 | Deep ultraviolet LED and preparation method thereof |
| CN114551617A (en) * | 2022-01-13 | 2022-05-27 | 华南理工大学 | Single-row carrier photodetector and preparation method thereof |
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