CN111725361A - Submicron vertical structure deep ultraviolet LED preparation process and deep ultraviolet LED made by the same - Google Patents

Abstract

The invention discloses a preparation process of a submicron vertical structure deep ultraviolet LED. The preparation process combines an original wafer and a new silicon substrate through a metal bonding process, and then uses a grinding and polishing technology to peel off the sapphire substrate to remove the buffer layer and u ‑AlGaN layer, and thin the n‑AlGaN layer, the thickness of the device is reduced from d ₀ to d ₁ ( d ₁ is less than 1 micron), and finally electrodes are deposited to realize a submicron vertical structure deep ultraviolet LED. The device structure can simultaneously improve the light extraction efficiency and the response rate of the device.

Description

Submicron vertical structure deep ultraviolet LED preparation process and deep ultraviolet LED made by the same

technical field

The invention relates to the technical fields of optical communication, lighting and display, in particular to a preparation process of a submicron vertical structure deep ultraviolet LED and a deep ultraviolet LED made by the same.

Background technique

Deep ultraviolet LEDs have broad application prospects in military, civil and other fields, but there is a worldwide problem of low luminous efficiency. The ultra-thin vertical structure LED can suppress the waveguide mode inside the device, reduce the photoelectric loss caused by material defects, reduce the thermal effect caused by electron transmission, and improve the injection efficiency and response rate of the device. Currently, deep ultraviolet LED structures are mainly grown on sapphire substrates by epitaxy. According to the existing technical means, it is difficult to separate the epitaxial layer and the sapphire substrate by means of laser lift-off to obtain a deep ultraviolet vertical structure LED.

SUMMARY OF THE INVENTION

In order to overcome the above-mentioned deficiencies of the prior art, the present invention provides a world problem of low light extraction efficiency of traditional deep ultraviolet LEDs, and proposes a vertical structure deep ultraviolet LED, which suppresses the waveguide mode in the device, reduces the photoelectric loss caused by material defects, and improves the device. Light extraction efficiency and response rate. Aiming at the difficulty of laser stripping the substrate of deep ultraviolet LED wafers, the technical routes of wafer bonding, magnetorheological polishing thinning technology and nitride maskless etching are proposed to strip the substrate, remove the buffer layer and u- AlGaN layer, and thin n-AlGaN layer, developed a sub-micron vertical structure deep ultraviolet LED.

The technical scheme adopted in the present invention is: the preparation process of submicron vertical structure deep ultraviolet LED includes the following steps:

S1. Select sapphire deep UV LED wafer and new silicon substrate

The sapphire deep ultraviolet LED wafer includes a sapphire substrate, a buffer layer, a u-AlGaN layer, an n-AlGaN layer, a quantum well layer, a p-GaN and a P electrode arranged in sequence;

S2. Metal bonding

Depositing In on the new silicon substrate, and depositing Ti/Pt/Au metal on the P electrode surface of the sapphire deep UV LED wafer;

Then, the side of the sapphire deep ultraviolet LED wafer deposited with Ti/Pt/Au metal and the side of In metal deposited on the new silicon substrate were metal-bonded;

S3. Sapphire substrate thinning

Thinning the sapphire substrate to 200±10 microns by mechanical grinding and polishing;

S4. The sapphire substrate, the buffer layer and the u-AlGaN layer are removed by a magnetorheological polishing thinning process, and the n-AlGaN layer is thinned.

Further, after the preparation process is completed in step S4, step S5 and step S6 are continued:

S5. N electrode deposition

First, deposit a new N electrode on the n-AlGaN layer of the product obtained by the magnetorheological polishing and thinning process;

S6. Grinding and polishing to thin the new silicon substrate and P electrode deposition

First, the new silicon substrate is thinned by grinding and polishing, and then a new P electrode is deposited to obtain a submicron vertical structure deep ultraviolet LED 1.

Further, the difference from step S5 and step S6 is that after step S4 is performed, the preparation process continues to perform step S7 and step S8:

S7. Etching the epitaxial layer

First, the products obtained by the magnetorheological polishing and thinning process are etched on the nitride etching equipment to etch the epitaxial layer, and the epitaxial layer is from n-AlGaN layer, quantum well layer, p-GaN to Ti/Pt/Au metal layer;

S8. Electrode deposition

Subsequently, a new N electrode is deposited on the n-AlGaN layer, and a new P electrode is deposited on the Ti/Pt/Au metal layer, and finally a submicron vertical structure deep ultraviolet LED II is obtained.

A submicron vertical structure deep ultraviolet LED one, made of a sapphire deep ultraviolet LED wafer and a new silicon substrate, wherein:

The sapphire deep ultraviolet LED wafer includes a sapphire substrate, a buffer layer, a u-AlGaN layer, an n-AlGaN layer, a quantum well layer, a p-GaN and a P electrode arranged in sequence;

The fabrication of the submicron vertical structure deep ultraviolet LED at least includes the following steps:

a. Metal bonding

Ti/Pt/Au metal is deposited on the P electrode surface of the sapphire deep UV LED wafer, and In metal is deposited on the new silicon substrate;

Then the side of the sapphire deep UV LED wafer with Ti/Pt/Au metal deposited and the side with In metal deposited on the new silicon substrate were metal bonded;

b. Thinning of metal-bonded products

b1. Thinning treatment first thins the sapphire substrate;

b2. Remove the sapphire substrate, the buffer layer and the u-AlGaN layer, and thin the n-AlGaN layer;

c. Electrode deposition

First deposit a new N electrode on the n-AlGaN layer;

Then perform grinding and polishing to thin the new silicon substrate;

Finally, a new P electrode is deposited on the new silicon substrate to obtain a submicron vertical structure deep ultraviolet LED.

When the metal-bonded product of the sub-micron vertical structure deep ultraviolet LED is subjected to the thinning process, in step b1, the sapphire substrate is firstly thinned to 200±10 microns by mechanical grinding and polishing;

Then, in step b, a magnetorheological polishing thinning process is used to remove the sapphire substrate, the buffer layer and the u-AlGaN layer, and the n-AlGaN layer is thinned.

Another submicron vertical structure deep ultraviolet LED 2 is made of a sapphire deep ultraviolet LED wafer and a new silicon substrate, wherein the sapphire deep ultraviolet LED wafer includes a sapphire substrate, a buffer layer, a u-AlGaN layer, n-AlGaN layer, quantum well layer, p-GaN and P electrodes;

The fabrication of the submicron vertical structure deep ultraviolet LED at least includes the following steps:

a. Metal bonding

Ti/Pt/Au metal is deposited on the P electrode surface of the sapphire deep ultraviolet LED wafer, and metal bonding is performed after the deposition of In on the new silicon substrate;

The Ti/Pt/Au metal side of the sapphire deep UV LED wafer is metal-bonded with the side where the In metal is deposited on the new silicon substrate;

b. Thinning of metal-bonded products

b1. Thinning treatment first thins the sapphire substrate;

b2. Remove the sapphire substrate, the buffer layer and the u-AlGaN layer, and thin the n-AlGaN layer;

c. Etching the epitaxial layer

After the thinning process, the epitaxial layer is etched on the nitride etching equipment, and the epitaxial layer is from n-AlGaN layer, quantum well layer, p-GaN to Ti/Pt/Au metal layer;

d. Electrode deposition

Subsequently, a new N electrode is deposited on the n-AlGaN layer, and a new P electrode is deposited on the Ti/Pt/Au metal layer to obtain a submicron vertical structure deep ultraviolet LED II.

Further, when the metal-bonded product in step b is thinned, the original sapphire substrate is firstly thinned to 200±10 microns by mechanical grinding and polishing in step b1;

Then, in step b2, a magnetorheological polishing thinning process is used to remove the sapphire substrate, the buffer layer and the u-AlGaN layer, and the n-AlGaN layer is thinned.

Compared with the prior art, the beneficial effects of the present invention are:

1. The vertical structure deep UV LED can suppress the waveguide mode in the device, reduce the photoelectric loss caused by material defects, and improve the light extraction efficiency and response rate of the device.

2. Solve the problem that the deep ultraviolet LED wafer is difficult to substrate, and propose that wafer bonding, mechanical grinding and polishing peeling off the sapphire substrate can solve the technical bottleneck that the laser is difficult to peel off the deep ultraviolet LED epitaxial layer.

3. Thinning by magnetorheological polishing can overcome the problem of uneven thickness caused by chemical mechanical polishing (CMP).

To sum up, the present invention adopts the technical solutions of wafer bonding and substrate stripping and thinning to manufacture a submicron vertical structure deep ultraviolet LED. First, the original wafer and the new silicon substrate are bonded together by a metal bonding process, and then the sapphire substrate is peeled off by grinding and polishing technology, the buffer layer and the u-AlGaN layer are removed, and the n-AlGaN layer is thinned. The thickness of the device is from d0 is thinned to d1 (d1 is less than 1 micron), and finally electrodes are deposited to form a submicron vertical structure deep ultraviolet LED. The deep ultraviolet LED thus prepared can simultaneously improve the electrical injection efficiency, light extraction efficiency, response speed and heat dissipation performance of the device.

Description of drawings

Fig. 1 is the manufacturing process flow of submicron vertical structure deep ultraviolet LED-30;

2 is a structural diagram of an embodiment of a submicron vertical structure deep ultraviolet LED-30;

FIG. 3 is a structural diagram of another embodiment of a submicron vertical structure deep ultraviolet LED 240;

FIG. 4 is a manufacturing process flow of another embodiment of a submicron vertical structure deep ultraviolet LED 240;

Fig. 5 is the electron microscope image of the composite wafer structure after metal bonding at 20 microns;

Among them: 10-sapphire deep UV LED wafer, 11-sapphire substrate, 12-buffer layer, 13-u-AlGaN layer, 14-n-AlGaN layer, 15-quantum well layer, 16- p-GaN, 17- P electrode;

30-submicron vertical structure deep ultraviolet LED one, 40-submicron vertical structure deep ultraviolet LED two, 50-metal bonding layer, 60-new P electrode, 70-new N electrode.

Detailed ways

The following describes in detail the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, only used to explain the present invention, and should not be construed as a limitation of the present invention.

In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", etc. is based on the attached The orientation or positional relationship shown in the figures is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the indicated combination or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a reference to the present invention. Invention limitations. In addition, during the description of the embodiments of the present invention, the positional relationships of components such as "up", "down", "front", "rear", "left", and "right" in all figures are based on FIG. 1 .

As shown in Figure 1, the preparation process of submicron vertical structure deep ultraviolet LED includes the following steps:

S1. Select sapphire deep ultraviolet LED wafer 10 and new silicon substrate 20

The sapphire deep ultraviolet LED wafer 10 includes a sapphire substrate 11, a buffer layer 12, a u-AlGaN layer 13, an n-AlGaN layer 14, a quantum well layer 15, a p-GaN 16 and a P electrode 17 arranged in sequence;

S2. Metal bonding

In is deposited on the new silicon substrate, and Ti/Pt/Au metal is deposited on the P electrode 17 surface of the sapphire deep UV LED wafer;

Then, the side where Ti/Pt/Au metal is deposited on the sapphire deep ultraviolet LED wafer and the side where In metal is deposited on the new silicon substrate are metal-bonded to form a metal bonding layer 50, which can also be called a metal bonding layer. Bonding metal layer, its electron microscope image is shown in Figure 3;

S3. Thinning of the sapphire substrate 11

Thin the sapphire substrate 11 to 200±10 μm by mechanical grinding and polishing (d0 shown in FIG. 1 );

S4. The sapphire substrate, the buffer layer and the u-AlGaN layer are removed by a magnetorheological polishing thinning process, and the n-AlGaN layer is thinned to obtain d1 shown in FIG. 1 .

When the magnetorheological polishing and thinning process is adopted in step S4, the magnetorheological fluid is used to generate a magnetorheological effect for polishing. Specifically, the magnetorheological fluid consists of a suspension of magnetic particles, a base fluid and a stabilizer. The magnetorheological effect is generated during polishing. The magnetorheological effect is that the magnetorheological fluid is a flowable liquid when no magnetic field is applied, but under the action of a strong magnetic field, its rheological properties undergo a sharp change, which is similar to a solid. The phenomenon of restoring its flow characteristics when the magnetic field is removed.

Magneto-rheological polishing technology uses the rapid relative motion between the flexible "small grinding head" with viscoplastic behavior and the workpiece formed by the rheological rheology of the magnetorheological polishing liquid in the gradient magnetic field, so that the surface of the workpiece is greatly affected. Large shear force, so that the workpiece surface material is removed. More specifically, under the action of a magnetic field, a "small grinding head" with a certain hardness is formed in the polishing area by the magnetorheological fluid to replace the rigid polishing disc in the process of granular abrasive polishing.

Under the action of an external magnetic field, the magnetorheological fluid becomes hard and its viscosity increases, and the shape and hardness of the "small grinding head" can be controlled by the magnetic field in real time, while other factors affecting the effect of the polishing area are fixed. In this way, the size and shape of the polishing area can be controlled, and the stability of the polishing area can be ensured under a certain magnetic field strength. These advantages are unmatched by traditional rigid polishing discs. The characteristics of the magnetorheological polishing method are as follows: ① It is suitable for polishing optical parts of any geometric shape; ② The processing speed is fast and the efficiency is high; ③ The processing precision is high, and the surface roughness can reach nanometer level; ④ There is no problem of tool wear; ⑤ Polishing debris and polishing heat are taken away in time to avoid affecting the processing accuracy; ⑥ No damage layer on the lower surface is produced; ⑦ No special tools and special mechanisms are required. Therefore, using the magnetorheological polishing technology, the sapphire substrate of the sapphire deep ultraviolet LED wafer 10 can be well peeled off, the buffer layer and the u-AlGaN layer can be removed, and the n-AlGaN layer can be thinned to obtain a sub-micron vertical structure. Deep UV LED.

A more preferred embodiment is that the preparation process continues to execute steps S5 and S6 after step S4 is performed:

S5. N electrode deposition

First, deposit a new N electrode on the n-AlGaN layer of the product obtained by the magnetorheological polishing and thinning process;

S6. Grinding and polishing to thin the new silicon substrate and P electrode deposition

First, the new silicon substrate is thinned by grinding and polishing, and then a new P electrode is deposited to obtain a submicron vertical structure deep ultraviolet LED-30, as shown in Figure 1 and Figure 2.

As shown in FIG. 3 and FIG. 4 , different from the embodiment in which steps S5 and S6 are continued to be performed after step S4 is completed, the preparation process may continue to be performed after step S4 is completed. Step S8:

S7. Etching the epitaxial layer

First, the product obtained by the magnetorheological polishing and thinning process is etched on the nitride etching equipment to etch the epitaxial layer. The epitaxial layer is from the n-AlGaN layer 14, the quantum well layer 15, the p-GaN 16 to the Ti/Pt/Au metal layer. ;

S8. Electrode deposition

Then, a new N-electrode n-Electrod is deposited on the n-AlGaN layer, and a new P-electrode p-Electrod is deposited on the Ti/Pt/Au metal layer. Finally, a sub-micron vertical structure deep ultraviolet LED II 40 is obtained. 4 as shown in Fig.

As shown in FIG. 2, the submicron vertical structure deep ultraviolet LED-30 is made of a sapphire deep ultraviolet LED wafer 10 and a new silicon substrate 20, wherein:

The sapphire deep ultraviolet LED wafer 10 includes a sapphire substrate 11, a buffer layer 12, a u-AlGaN layer 13, an n-AlGaN layer 14, a quantum well layer 15, a p-GaN 16 and a P electrode 17 arranged in sequence;

The fabrication of the submicron vertical structure deep ultraviolet LED at least includes the following steps:

a. Metal bonding

Ti/Pt/Au metal is deposited on the P electrode surface of the sapphire deep ultraviolet LED wafer 10, and In metal is deposited on the new silicon substrate;

Subsequently, the side of the sapphire deep ultraviolet LED wafer 10 deposited with Ti/Pt/Au metal and the side of the new silicon substrate deposited with In metal are metal bonded;

b. Thinning of metal-bonded products

b1. Thinning treatment first thins the sapphire substrate;

b2. Removing the sapphire substrate 11, the buffer layer 12 and the u-AlGaN layer 13, and thinning the n-AlGaN layer 14;

c. Electrode deposition

First deposit a new N electrode on the n-AlGaN layer 14;

Then perform grinding and polishing to thin the new silicon substrate;

Finally, a new P electrode is deposited on a new silicon substrate to obtain a submicron vertical structure deep ultraviolet LED30.

When the metal-bonded product is thinned, step b1 first thins the sapphire substrate to 200±10 microns by mechanical grinding and polishing;

Then, in step b2, a magnetorheological polishing thinning process is used to remove the sapphire substrate, the buffer layer and the u-AlGaN layer, and the n-AlGaN layer is thinned.

As shown in FIG. 3 , the submicron vertical structure deep ultraviolet LED 2 40 is made of a sapphire deep ultraviolet LED wafer 10 and a new silicon substrate 20, wherein the sapphire deep ultraviolet LED wafer 10 includes a sapphire substrate 11, buffer layer 12, u-AlGaN layer 13, n-AlGaN layer 14, quantum well layer 15, p-GaN 16 and P electrode 17;

The fabrication of the submicron vertical structure deep ultraviolet LED at least includes the following steps:

a. Metal bonding

Ti/Pt/Au metal is deposited on the 10P electrode surface of the sapphire deep ultraviolet LED wafer, and metal bonding is performed after depositing In on the new silicon substrate;

The sapphire deep ultraviolet LED wafer has 10 deposited Ti/Pt/Au metal side and the new silicon substrate deposited In metal side for metal bonding;

b. Thinning of metal-bonded products

b1. Thinning treatment first thins the sapphire substrate;

b2. Removing the sapphire substrate 11, the buffer layer 12 and the u-AlGaN layer 13, and thinning the n-AlGaN layer 14;

c. Etching the epitaxial layer

After the thinning process, the epitaxial layer is etched on the nitride etching equipment, and the epitaxial layer is from the n-AlGaN layer 14, the quantum well layer 15, the p-GaN 16 to the Ti/Pt/Au metal layer;

d. Electrode deposition

长大于器件 厚度d1，参照图3和4图所示。 Subsequently, a new N electrode was deposited on the n-AlGaN layer, and a new P electrode was deposited on the Ti/Pt/Au metal layer to obtain a submicron vertical structure deep ultraviolet LED 240, and the obtained submicron vertical structure deep ultraviolet LED Two 40's luminous waves

The length is greater than the device thickness d1, as shown in FIGS. 3 and 4 .

When the metal-bonded product in step b is thinned, the original sapphire substrate is firstly thinned to 200±10 microns by mechanical grinding and polishing in step b1;

Then, in step b2, a magnetorheological polishing thinning process is used to remove the sapphire substrate 11, the buffer layer 12 and the u-AlGaN layer 13, and the n-AlGaN layer 14 is thinned.

Explanation of terms: In this specification and the accompanying drawings: p-GaN and p-type GaN are the same, both refer to p-type gallium nitride; MQW is a quantum well; n-ALGaN and n-type ALGaN indicate the same, both refer to n-type aluminum gallium nitride; u-ALGaN and u-type ALGaN indicate the same, both refer to undoped aluminum gallium nitride; buffer layer also refers to the buffer layer; Emitted light, reflected light; Incident light, incident light, p-elcetrode, p-Elcetrode and p-electrode For the P electrode, n-elcetrode, n-Elcetrode for the N electrode, Bonding metal, bonding metal layer (shown in Figure 5) for the metal bonding layer, Silicon is a new silicon substrate, Sapphire is a sapphire substrate.

The embodiment of the present invention announces the preferred embodiment, but is not limited to this, those of ordinary skill in the art can easily understand the spirit of the present invention according to the above-mentioned embodiment, and make different extensions and changes, However, as long as they do not depart from the spirit of the present invention, they are all within the protection scope of the present invention.

Claims (7)

1. submicron vertical structure deep ultraviolet LED preparation technology, is characterized in that: comprise the steps: S1. Select sapphire deep UV LED wafer (10) and new silicon substrate (20) The sapphire deep ultraviolet LED wafer (10) includes a sapphire substrate (11), a buffer layer (12), a u-AlGaN layer (13), an n-AlGaN layer (14), a quantum well layer (15), a p - GaN (16) and P-electrode (17); S2. Metal bonding Depositing In on the new silicon substrate, and depositing Ti/Pt/Au metal on the P electrode (17) surface of the sapphire deep UV LED wafer; Subsequently, the side deposited with Ti/Pt/Au metal on the sapphire deep ultraviolet LED wafer and the side deposited with In metal on the new silicon substrate are metal-bonded to form a metal bonding layer (50); S3. Sapphire substrate (11) thinning Thinning the sapphire substrate (11) to 200±10 microns by mechanical grinding and polishing; S4. The sapphire substrate, the buffer layer and the u-AlGaN layer are removed by a magnetorheological polishing thinning process, and the n-AlGaN layer is thinned. 2. The preparation process according to claim 1, wherein the preparation process continues to perform steps S5 and S6 after step S4 is performed: S5. N electrode deposition First, deposit a new N electrode (60) on the n-AlGaN layer of the product obtained by the magnetorheological polishing and thinning process; S6. Grinding and polishing to thin the new silicon substrate and P electrode deposition First, a new silicon substrate is thinned by grinding and polishing, and then a new P electrode (70) is deposited to obtain a submicron vertical structure deep ultraviolet LED one (30). 3. The preparation process according to claim 1, wherein the preparation process continues to perform steps S7 and S8 after step S4 is performed: S7. Etching the epitaxial layer First, the products obtained by the magnetorheological polishing and thinning process are etched on the nitride etching equipment to etch the epitaxial layer. Ti/Pt/Au metal layer; S8. Electrode deposition Subsequently, a new N electrode was deposited on the n-AlGaN layer, and a new P electrode was deposited on the Ti/Pt/Au metal layer, and finally a submicron vertical structure deep ultraviolet LED II was obtained (40). 4. A submicron vertical structure deep ultraviolet LED one (30), characterized in that: it is made of a sapphire deep ultraviolet LED wafer (10) and a new silicon substrate (20), wherein: The sapphire deep ultraviolet LED wafer (10) includes a sapphire substrate (11), a buffer layer (12), a u-AlGaN layer (13), an n-AlGaN layer (14), a quantum well layer (15), a p - GaN (16) and P-electrode (17); The fabrication of the submicron vertical structure deep ultraviolet LED at least includes the following steps: a. Metal bonding Ti/Pt/Au metal is deposited on the P electrode surface of the sapphire deep ultraviolet LED wafer (10), and In metal is deposited on the new silicon substrate; Then the side of the sapphire deep ultraviolet LED wafer (10) deposited with Ti/Pt/Au metal and the side of the new silicon substrate deposited with In metal are metal-bonded; b. Thinning of metal-bonded products b1. Thinning treatment first thins the sapphire substrate; b2. Removing the sapphire substrate (11), the buffer layer (12) and the u-AlGaN layer (13), and thinning the n-AlGaN layer (14); c. Electrode deposition First deposit a new N electrode on the n-AlGaN layer (14); Then perform grinding and polishing to thin the new silicon substrate; Finally, a new P electrode is deposited on a new silicon substrate to obtain a submicron vertical structure deep ultraviolet LED (30). 5 . The submicron vertical structure deep ultraviolet LED according to claim 4 , wherein when the metal-bonded product is thinned, the sapphire substrate is firstly thinned to 200 ± 200 ± 1 in step b1 by mechanical grinding and polishing. 6 . 10 microns; Then, in step b2, a magnetorheological polishing thinning process is used to remove the sapphire substrate, the buffer layer and the u-AlGaN layer, and the n-AlGaN layer is thinned. 6. The second submicron vertical structure deep ultraviolet LED (40) is characterized in that: it is made of a sapphire deep ultraviolet LED wafer (10) and a new silicon substrate (20), wherein the sapphire deep ultraviolet LED wafer (10) comprises Sapphire substrate (11), buffer layer (12), u-AlGaN layer (13), n-AlGaN layer (14), quantum well layer (15), p-GaN (16) and P electrode (17) arranged in sequence ); The fabrication of the submicron vertical structure deep ultraviolet LED at least includes the following steps: a. Metal bonding Ti/Pt/Au metal is deposited on the P electrode surface of sapphire deep ultraviolet LED wafer (10), and metal bonding is performed after depositing In on the new silicon substrate; The sapphire deep ultraviolet LED wafer (10) is metal-bonded with the side where the Ti/Pt/Au metal is deposited and the side where the In metal is deposited on the new silicon substrate; b. Thinning of metal-bonded products b1. Thinning treatment first thins the sapphire substrate; b2. Removing the sapphire substrate (11), the buffer layer (12) and the u-AlGaN layer (13), and thinning the n-AlGaN layer (14); c. Etching the epitaxial layer After the thinning process, the epitaxial layer is etched on the nitride etching equipment, and the epitaxial layer is from n-AlGaN layer (14), quantum well layer (15), p-GaN (16) to Ti/Pt/Au metal Floor; d. Electrode deposition Subsequently, a new N electrode was deposited on the n-AlGaN layer, and a new P electrode was deposited on the Ti/Pt/Au metal layer to obtain a submicron vertical structure deep ultraviolet LED II (40). 7. The submicron vertical structure deep ultraviolet LED two according to claim 6, wherein: when the metal-bonded product in step b is thinned, the original sapphire substrate is first thinned by mechanical grinding and polishing in step b1. to 200±10 microns; Then, in step b2, a magnetorheological polishing thinning process is used to remove the sapphire substrate (11), the buffer layer (12) and the u-AlGaN layer (13), and the n-AlGaN layer (14) is thinned.

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