CN111725361A - Preparation process of deep ultraviolet LED with submicron vertical structure and deep ultraviolet LED prepared by same - Google Patents
Preparation process of deep ultraviolet LED with submicron vertical structure and deep ultraviolet LED prepared by same Download PDFInfo
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- CN111725361A CN111725361A CN202010381449.2A CN202010381449A CN111725361A CN 111725361 A CN111725361 A CN 111725361A CN 202010381449 A CN202010381449 A CN 202010381449A CN 111725361 A CN111725361 A CN 111725361A
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- 239000000758 substrate Substances 0.000 claims abstract description 96
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 89
- 239000010980 sapphire Substances 0.000 claims abstract description 89
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 77
- 238000005498 polishing Methods 0.000 claims abstract description 54
- 238000000151 deposition Methods 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000000227 grinding Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims description 19
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- 238000004519 manufacturing process Methods 0.000 claims description 10
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- 238000005516 engineering process Methods 0.000 abstract description 6
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- 239000007924 injection Substances 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
The invention discloses a preparation process of a deep ultraviolet LED with a submicron vertical structure, which combines an original wafer and a new silicon substrate together through a metal bonding process, then strips off the sapphire substrate by adopting a grinding and polishing technology, removes a buffer layer and a u-AlGaN layer, thins an n-AlGaN layer, and ensures that the thickness of a device is increased from that of the deviced 0 Thinning tod 1 (d 1 Less than 1 micron) and finally depositing an electrode to realize the deep ultraviolet LED with the submicron vertical structure. The device structure can simultaneously improve the light extraction efficiency and the response rate of the device.
Description
Technical Field
The invention relates to the technical field of optical communication, illumination and display, in particular to a preparation process of a deep ultraviolet LED with a submicron vertical structure and a deep ultraviolet LED prepared by the preparation process.
Background
The deep ultraviolet LED has wide application prospect in the fields of military, civil use and the like, but has the worldwide problem of low luminous efficiency. The ultrathin vertical structure LED can inhibit a waveguide mode in a device, reduce photoelectric loss caused by material defects, reduce the heat effect generated by electron transmission, and improve the injection efficiency and response rate of the device. Currently, deep ultraviolet LED structures are mainly grown on sapphire substrates by epitaxy. According to the existing technical means, the epitaxial layer and the sapphire substrate are difficult to separate by a laser lift-off method, and the deep ultraviolet vertical structure LED is obtained.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the deep ultraviolet LED with the vertical structure aiming at the world problem of low light emitting efficiency of the traditional deep ultraviolet LED, so that the waveguide mode in the device is inhibited, the photoelectric loss caused by material defects is reduced, and the light emitting efficiency and the response speed of the device are improved. Aiming at the problem that a deep ultraviolet LED wafer is difficult to strip a substrate by laser, a wafer bonding, magneto-rheological polishing and thinning technology and a nitride maskless etching technical route are provided, the substrate is stripped, a buffer layer and a u-AlGaN layer are removed, an n-AlGaN layer is thinned, and the deep ultraviolet LED with the submicron vertical structure is developed.
The technical scheme adopted by the invention is as follows: the preparation process of the deep ultraviolet LED with the submicron vertical structure comprises the following steps:
s1, selecting a sapphire deep ultraviolet LED wafer and a new silicon substrate
The sapphire deep ultraviolet LED wafer comprises a sapphire substrate, a buffer layer, a u-AlGaN layer, an n-AlGaN layer, a quantum well layer, P-GaN and a P electrode which are sequentially arranged;
s2. metal bonding
Depositing In on a new silicon substrate, and depositing Ti/Pt/Au metal on the P electrode surface of the sapphire deep ultraviolet LED wafer;
then, carrying out metal bonding on one surface of the sapphire deep ultraviolet LED wafer on which Ti/Pt/Au metal is deposited and one surface of the new silicon substrate on which In metal is deposited;
s3 thinning of sapphire substrate
Thinning the sapphire substrate to 200 +/-10 microns through mechanical grinding and polishing;
and S4, removing the sapphire substrate, the buffer layer and the u-AlGaN layer by adopting a magneto-rheological polishing thinning process, and thinning the n-AlGaN layer.
Further, after the step S4 is completed, the preparation process continues to perform the steps S5 and S6:
s5. N electrode deposition
Depositing a new N electrode on an N-AlGaN layer of a product obtained by a magnetorheological polishing and thinning process;
s6 grinding, polishing and thinning the new silicon substrate and depositing P electrode
And grinding and polishing to thin a new silicon substrate, and depositing a new P electrode to obtain the deep ultraviolet LED I with the submicron vertical structure.
Further, unlike the steps S5 and S6, the preparation process continues to perform the steps S7 and S8 after the step S4 is completed:
s7 etching epitaxial layer
Firstly, etching an epitaxial layer of a product obtained by the magnetorheological polishing and thinning process on nitride etching equipment, wherein the epitaxial layer is from an n-AlGaN layer, a quantum well layer, p-GaN to a Ti/Pt/Au metal layer;
s8, electrode deposition
And then depositing new N electrodes on the N-AlGaN layer, depositing new P electrodes on the Ti/Pt/Au metal layer, and finally obtaining the deep ultraviolet LED II with the submicron vertical structure.
A sub-micron vertical structure deep ultraviolet LED I is made of a sapphire deep ultraviolet LED wafer and a new silicon substrate, wherein:
the sapphire deep ultraviolet LED wafer comprises a sapphire substrate, a buffer layer, a u-AlGaN layer, an n-AlGaN layer, a quantum well layer, P-GaN and a P electrode which are sequentially arranged;
the manufacturing of the deep ultraviolet LED with the submicron vertical structure at least comprises the following steps:
a. metallic bonding
Depositing Ti/Pt/Au metal on the P electrode surface of the sapphire deep ultraviolet LED wafer, and depositing In metal on the new silicon substrate;
then, carrying out metal bonding on one surface of the sapphire deep ultraviolet LED wafer on which Ti/Pt/Au metal is deposited and one surface of the new silicon substrate on which In metal is deposited;
b. thinning the product after metal bonding
b1. Thinning the sapphire substrate;
b2. removing the sapphire substrate, the buffer layer and the u-AlGaN layer, and thinning the n-AlGaN layer;
c. electrode deposition
Depositing a new N electrode on the N-AlGaN layer;
then grinding and polishing are carried out to thin the new silicon substrate;
and finally depositing a new P electrode on a new silicon substrate to obtain the deep ultraviolet LED with the submicron vertical structure.
When the product of the submicron vertical structure deep ultraviolet LED after metal bonding is thinned, step b1 firstly thins the sapphire substrate to 200 +/-10 microns through mechanical grinding and polishing;
and then, removing the sapphire substrate, the buffer layer and the u-AlGaN layer and thinning the n-AlGaN layer by adopting a magneto-rheological polishing and thinning process in the step b.
The other deep ultraviolet LED II with the submicron vertical structure is made of a sapphire deep ultraviolet LED wafer and a new silicon substrate, wherein the sapphire deep ultraviolet LED wafer comprises a sapphire substrate, a buffer layer, a u-AlGaN layer, an n-AlGaN layer, a quantum well layer, P-GaN and a P electrode which are sequentially arranged;
the manufacturing of the deep ultraviolet LED with the submicron vertical structure at least comprises the following steps:
a. metallic bonding
Depositing Ti/Pt/Au metal on the P electrode surface of the sapphire deep ultraviolet LED wafer, and performing metal bonding after In is deposited on the new silicon substrate;
carrying out metal bonding on one surface of the sapphire deep ultraviolet LED wafer on which Ti/Pt/Au metal is deposited and one surface of the new silicon substrate on which In metal is deposited;
b. thinning the product after metal bonding
b1. Thinning the sapphire substrate;
b2. removing the sapphire substrate, the buffer layer and the u-AlGaN layer, and thinning the n-AlGaN layer;
c. etching epitaxial layer
Etching an epitaxial layer of the thinned product on nitride etching equipment, wherein the epitaxial layer is from an n-AlGaN layer, a quantum well layer, p-GaN to a Ti/Pt/Au metal layer;
d. electrode deposition
And then depositing new N electrodes on the N-AlGaN layer and depositing new P electrodes on the Ti/Pt/Au metal layer respectively to obtain the deep ultraviolet LED II with the submicron vertical structure.
Further, when the product after the metal bonding in the step b is thinned, the original sapphire substrate is thinned to 200 +/-10 microns in the step b1 through mechanical grinding and polishing;
and then b2, removing the sapphire substrate, the buffer layer and the u-AlGaN layer by adopting a magneto-rheological polishing and thinning process, and thinning the n-AlGaN layer.
Compared with the prior art, the invention has the beneficial effects that:
1. the deep ultraviolet LED with the vertical structure can inhibit a waveguide mode in a device, reduce photoelectric loss caused by material defects, and improve the light emitting efficiency and response rate of the device.
2. The method solves the problem that the deep ultraviolet LED wafer is difficult to be a substrate, and provides the technical bottleneck that the deep ultraviolet LED epitaxial layer is difficult to be peeled by laser through wafer bonding, mechanical grinding, polishing and peeling of the sapphire substrate.
3. The magneto-rheological polishing thinning can overcome the problem of uneven thickness caused by a chemical mechanical polishing technology (CMP).
In summary, the invention adopts the technical scheme of wafer bonding and substrate peeling thinning to manufacture the deep ultraviolet LED with the submicron vertical structure. Firstly, combining an original wafer and a new silicon substrate together through a metal bonding process, then stripping the sapphire substrate by adopting a grinding and polishing technology, removing a buffer layer and a u-AlGaN layer, thinning the n-AlGaN layer, thinning the device thickness from d0 to d1 (d1 is less than 1 micron), and finally depositing an electrode to prepare the submicron vertical structure deep ultraviolet LED. The deep ultraviolet LED prepared by the method can simultaneously improve the electric injection efficiency, the light extraction efficiency, the response speed and the heat dissipation performance of the device.
Drawings
FIG. 1 is a process flow of a submicron vertical structure deep ultraviolet LED-30 preparation process;
FIG. 2 is a block diagram of an embodiment of a sub-micron vertical structure deep ultraviolet LED 30;
FIG. 3 is a block diagram of another embodiment of a submicron vertical deep ultraviolet LED 40;
FIG. 4 is a flow chart of another embodiment of a sub-micron vertical deep ultraviolet LED 40;
FIG. 5 is an electron microscope image at 20 microns of the composite wafer structure after metal bonding;
wherein: the manufacturing method comprises the following steps of (1) 10-sapphire deep ultraviolet LED wafer, 11-sapphire substrate, 12-buffer layer, 13-u-AlGaN layer, 14-n-AlGaN layer, 15-quantum well layer, 16-P-GaN and 17-P electrode;
30-submicron vertical structure deep ultraviolet LED I, 40-submicron vertical structure deep ultraviolet LED II, 50-metal bonding layer, 60-new P electrode and 70-new N electrode.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the combination or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, are not to be construed as limiting the present invention. In addition, in the description process of the embodiment of the present invention, the positional relationships of the devices such as "upper", "lower", "front", "rear", "left", "right", and the like in all the drawings are based on fig. 1.
As shown in fig. 1, the process for preparing the deep ultraviolet LED with the submicron vertical structure comprises the following steps:
s1, selecting a sapphire deep ultraviolet LED wafer 10 and a new silicon substrate 20
The sapphire deep ultraviolet LED wafer 10 comprises a sapphire substrate 11, a buffer layer 12, a u-AlGaN layer 13, an n-AlGaN layer 14, a quantum well layer 15, P-GaN16 and a P electrode 17 which are sequentially arranged;
s2. metal bonding
Depositing In on a new silicon substrate, and depositing Ti/Pt/Au metal on the surface of a P electrode 17 of the sapphire deep ultraviolet LED wafer;
then, carrying out metal bonding on one surface of the sapphire deep ultraviolet LED wafer on which Ti/Pt/Au metal is deposited and one surface of the new silicon substrate on which In metal is deposited to form a metal bonding layer 50, wherein the metal bonding layer can also be called a bonding metal layer, and an electron microscope image of the metal bonding layer is shown In FIG. 3;
s3 thinning of sapphire substrate 11
The sapphire substrate 11 is thinned to 200 ± 10 micrometers (d 0 shown in fig. 1) by mechanical grinding and polishing;
s4, removing the sapphire substrate, the buffer layer and the u-AlGaN layer by adopting a magneto-rheological polishing thinning process, and thinning the n-AlGaN layer to obtain d1 shown in figure 1.
And step S4, when the magnetorheological polishing and thinning process is adopted, the magnetorheological fluid is used for generating a magnetorheological effect to polish. Specifically, the magnetorheological fluid is a suspension consisting of magnetic particles, a base fluid and a stabilizer. The polishing process produces magnetic rheological effect, which is the phenomenon that the magnetic rheological liquid is flowable liquid without magnetic field, and the rheological characteristic is sharply changed under the action of strong magnetic field, showing solid-like property, and recovering the flowing characteristic when the magnetic field is removed.
The magnetorheological polishing technology is characterized in that a magnetorheological polishing liquid generates rheology in a gradient magnetic field, so that a flexible small grinding head with a viscosity-plasticity behavior is formed, and the workpiece has quick relative motion, so that the surface of the workpiece is subjected to a large shearing force, and the surface material of the workpiece is removed. More specifically, the magnetorheological fluid forms a small grinding head with certain hardness in the range of a polishing area under the action of a magnetic field to replace a rigid polishing disk in the polishing process of the granular abrasive.
Under the action of applying an external magnetic field, the magnetorheological fluid becomes hard, the viscosity of the magnetorheological fluid is increased, the shape and the hardness of the small grinding head can be controlled by the magnetic field in real time, and other factors influencing the action effect of a polishing area are fixed and unchanged, so that the stability of the polishing area under a certain magnetic field strength can be ensured by controlling the size and the shape of the polishing area, and the advantages are incomparable to those of the traditional rigid polishing disk. The magnetorheological polishing method has the following characteristics: the polishing solution is suitable for polishing optical parts in any geometric shapes; secondly, the processing speed is high, and the efficiency is high; the processing precision is high, and the roughness of the processed surface can reach the nanometer level; the problem of tool abrasion does not exist; polishing fragments and polishing heat are taken away in time, so that the processing precision is prevented from being influenced; sixthly, a lower surface damage layer is not generated; and no special tool or special mechanism is needed. Therefore, the magneto-rheological polishing technology is used, the sapphire substrate of the sapphire deep ultraviolet LED wafer 10 can be well stripped, the buffer layer and the u-AlGaN layer are removed, the n-AlGaN layer is thinned, and the submicron vertical structure deep ultraviolet LED is further manufactured.
The more preferred embodiment is a manufacturing process, after the step S4 is completed, the steps S5 and S6 are continued:
s5. N electrode deposition
Depositing a new N electrode on an N-AlGaN layer of a product obtained by a magnetorheological polishing and thinning process;
s6 grinding, polishing and thinning the new silicon substrate and depositing P electrode
Grinding and polishing are firstly carried out to thin a new silicon substrate, then a new P electrode is deposited, and the deep ultraviolet LED30 with the submicron vertical structure is obtained, as shown in figures 1 and 2.
As shown in fig. 3 and 4, unlike the embodiment in which step S5 and step S6 are continuously performed after step S4 is completed, the preparation process may further continue to perform step S7 and step S8 after step S4 is completed:
s7 etching epitaxial layer
Firstly, etching an epitaxial layer of a product obtained by the magnetorheological polishing and thinning process on nitride etching equipment, wherein the epitaxial layer is from an n-AlGaN layer 14, a quantum well layer 15, p-GaN16 to a Ti/Pt/Au metal layer;
s8, electrode deposition
And then depositing a new N electrode N-electric on the N-AlGaN layer, depositing a new P electrode P-electric on the Ti/Pt/Au metal layer, and finally obtaining the submicron vertical structure deep ultraviolet LED II 40, which is shown by referring to the graphs in FIGS. 3 and 4.
As shown in fig. 2, the sub-micron vertical structure deep ultraviolet LED one 30 is made of a sapphire deep ultraviolet LED wafer 10 and a new silicon substrate 20, wherein:
the sapphire deep ultraviolet LED wafer 10 comprises a sapphire substrate 11, a buffer layer 12, a u-AlGaN layer 13, an n-AlGaN layer 14, a quantum well layer 15, P-GaN16 and a P electrode 17 which are sequentially arranged;
the manufacturing of the deep ultraviolet LED with the submicron vertical structure at least comprises the following steps:
a. metallic bonding
Depositing Ti/Pt/Au metal on the P electrode surface of the sapphire deep ultraviolet LED wafer 10, and depositing In metal on the new silicon substrate;
then, carrying out metal bonding on one surface of the sapphire deep ultraviolet LED wafer 10 on which Ti/Pt/Au metal is deposited and one surface of the new silicon substrate on which In metal is deposited;
b. thinning the product after metal bonding
b1. Thinning the sapphire substrate;
b2. then removing the sapphire substrate 11, the buffer layer 12 and the u-AlGaN layer 13, and thinning the n-AlGaN layer 14;
c. electrode deposition
A new N electrode is deposited on the N-AlGaN layer 14;
then grinding and polishing are carried out to thin the new silicon substrate;
and finally, depositing a new P electrode on the new silicon substrate to obtain the deep ultraviolet LED30 with the submicron vertical structure.
When the product after metal bonding is thinned, the sapphire substrate is thinned to 200 +/-10 microns in step b1 through mechanical grinding and polishing;
and then b2, removing the sapphire substrate, the buffer layer and the u-AlGaN layer by adopting a magneto-rheological polishing and thinning process, and thinning the n-AlGaN layer.
As shown in fig. 3, the second sub-micron vertical structure deep ultraviolet LED 40 is made of a sapphire deep ultraviolet LED wafer 10 and a new silicon substrate 20, wherein the sapphire deep ultraviolet LED wafer 10 includes a sapphire substrate 11, a buffer layer 12, a u-AlGaN layer 13, an n-AlGaN layer 14, a quantum well layer 15, a P-GaN16 and a P electrode 17, which are sequentially arranged;
the manufacturing of the deep ultraviolet LED with the submicron vertical structure at least comprises the following steps:
a. metallic bonding
Depositing Ti/Pt/Au metal on the 10P electrode surface of the sapphire deep ultraviolet LED wafer, and performing metal bonding after In is deposited on the new silicon substrate;
one side of the sapphire deep ultraviolet LED wafer 10 on which Ti/Pt/Au metal is deposited is subjected to metal bonding with one side of the new silicon substrate on which In metal is deposited;
b. thinning the product after metal bonding
b1. Thinning the sapphire substrate;
b2. then removing the sapphire substrate 11, the buffer layer 12 and the u-AlGaN layer 13, and thinning the n-AlGaN layer 14;
c. etching epitaxial layer
Etching an epitaxial layer of the thinned product on nitride etching equipment, wherein the epitaxial layer is from the n-AlGaN layer 14, the quantum well layer 15, the p-GaN16 to a Ti/Pt/Au metal layer;
d. electrode deposition
Then respectively depositing new N electrodes on the N-AlGaN layer, depositing new P electrodes on the Ti/Pt/Au metal layer to prepare a submicron vertical structure deep ultraviolet LED II 40, and obtaining the luminescent wave of the submicron vertical structure deep ultraviolet LED II 40
The length is greater than the device thickness d1 as shown with reference to figures 3 and 4.
B, when the product after metal bonding in the step b is thinned, firstly thinning the original sapphire substrate to 200 +/-10 microns in step b1 through mechanical grinding and polishing;
and then in the step b2, removing the sapphire substrate 11, the buffer layer 12 and the u-AlGaN layer 13 by adopting a magneto-rheological polishing and thinning process, and thinning the n-AlGaN layer 14.
The noun explains: in this specification and the accompanying drawings: the p-GaN is the same as the p-type GaN and refers to p-type gallium nitrogen; MQW is quantum well; the n-ALGaN is the same as the n-type ALGaN and refers to n-type AlGaN; the u-ALGaN and the u-type ALGaN are the same in indication, and refer to non-doped aluminum gallium nitrogen; buffer layer is also referred to as buffer layer; emittedlight, reflected light; incident light, P-electrode, P-Elcetrode and P-electrode are P electrodes, N-electrode, N-Elcetrode are N electrodes, Bonding metal and Bonding metal layer (shown in figure 5) are metal Bonding layers, Silicon is a new Silicon substrate, and Sapphire is a Sapphire substrate.
The embodiments of the present invention are disclosed as the preferred embodiments, but not limited thereto, and those skilled in the art can easily understand the spirit of the present invention and make various extensions and changes without departing from the spirit of the present invention.
Claims (7)
1. The preparation process of the deep ultraviolet LED with the submicron vertical structure is characterized by comprising the following steps: the method comprises the following steps:
s1, selecting a sapphire deep ultraviolet LED wafer (10) and a new silicon substrate (20)
The sapphire deep ultraviolet LED wafer (10) comprises a sapphire substrate (11), a buffer layer (12), a u-AlGaN layer (13), an n-AlGaN layer (14), a quantum well layer (15), a P-GaN (16) and a P electrode (17) which are sequentially arranged;
s2. metal bonding
Depositing In on a new silicon substrate, and depositing Ti/Pt/Au metal on the surface of a P electrode (17) of the sapphire deep ultraviolet LED wafer;
then, carrying out metal bonding on one surface of the sapphire deep ultraviolet LED wafer on which Ti/Pt/Au metal is deposited and one surface of the new silicon substrate on which In metal is deposited to form a metal bonding layer (50);
s3 thinning of sapphire substrate (11)
The sapphire substrate (11) is thinned to 200 +/-10 microns through mechanical grinding and polishing;
and S4, removing the sapphire substrate, the buffer layer and the u-AlGaN layer by adopting a magneto-rheological polishing thinning process, and thinning the n-AlGaN layer.
2. The process according to claim 1, characterized in that: after the completion of the step S4, the preparation process continues to step S5 and step S6:
s5. N electrode deposition
Depositing a new N electrode (60) on the N-AlGaN layer of the product obtained by the magnetorheological polishing and thinning process;
s6 grinding, polishing and thinning the new silicon substrate and depositing P electrode
Grinding and polishing are firstly carried out to thin a new silicon substrate, then a new P electrode (70) is deposited, and the deep ultraviolet LED I (30) with the submicron vertical structure is obtained.
3. The process according to claim 1, characterized in that: after the completion of the step S4, the preparation process continues to step S7 and step S8:
s7 etching epitaxial layer
Firstly, etching an epitaxial layer of a product obtained by the magnetorheological polishing and thinning process on nitride etching equipment, wherein the epitaxial layer is from an n-AlGaN layer (14), a quantum well layer (15), a p-GaN (16) to a Ti/Pt/Au metal layer;
s8, electrode deposition
And then depositing new N electrodes on the N-AlGaN layer and depositing new P electrodes on the Ti/Pt/Au metal layer respectively to finally obtain the deep ultraviolet LED II (40) with the submicron vertical structure.
4. A sub-micron vertical structure deep ultraviolet LED one (30), characterized by: is made of a sapphire deep ultraviolet LED wafer (10) and a new silicon substrate (20), wherein:
the sapphire deep ultraviolet LED wafer (10) comprises a sapphire substrate (11), a buffer layer (12), a u-AlGaN layer (13), an n-AlGaN layer (14), a quantum well layer (15), a P-GaN (16) and a P electrode (17) which are sequentially arranged;
the manufacturing of the deep ultraviolet LED with the submicron vertical structure at least comprises the following steps:
a. metallic bonding
Ti/Pt/Au metal is deposited on the P electrode surface of the sapphire deep ultraviolet LED wafer (10), and In metal is deposited on the new silicon substrate;
then, carrying out metal bonding on one surface of the sapphire deep ultraviolet LED wafer (10) on which Ti/Pt/Au metal is deposited and one surface of the new silicon substrate on which In metal is deposited;
b. thinning the product after metal bonding
b1. Thinning the sapphire substrate;
b2. then removing the sapphire substrate (11), the buffer layer (12) and the u-AlGaN layer (13), and thinning the n-AlGaN layer (14);
c. electrode deposition
Depositing a new N electrode on the N-AlGaN layer (14);
then grinding and polishing are carried out to thin the new silicon substrate;
and finally, depositing a new P electrode on the new silicon substrate to obtain the deep ultraviolet LED (30) with the submicron vertical structure.
5. The submicron vertical structure deep ultraviolet LED one in accordance with claim 4, wherein: when the product after metal bonding is thinned, the sapphire substrate is thinned to 200 +/-10 microns in step b1 through mechanical grinding and polishing;
and then b2, removing the sapphire substrate, the buffer layer and the u-AlGaN layer by adopting a magneto-rheological polishing and thinning process, and thinning the n-AlGaN layer.
6. The deep ultraviolet LED II (40) with the submicron vertical structure is characterized in that: the LED chip is manufactured by a sapphire deep ultraviolet LED wafer (10) and a new silicon substrate (20), wherein the sapphire deep ultraviolet LED wafer (10) comprises a sapphire substrate (11), a buffer layer (12), a u-AlGaN layer (13), an n-AlGaN layer (14), a quantum well layer (15), a P-GaN (16) and a P electrode (17) which are sequentially arranged;
the manufacturing of the deep ultraviolet LED with the submicron vertical structure at least comprises the following steps:
a. metallic bonding
Depositing Ti/Pt/Au metal on the P electrode surface of the sapphire deep ultraviolet LED wafer (10), and performing metal bonding after In is deposited on a new silicon substrate;
one side of the sapphire deep ultraviolet LED wafer (10) on which Ti/Pt/Au metal is deposited is subjected to metal bonding with one side of the new silicon substrate on which In metal is deposited;
b. thinning the product after metal bonding
b1. Thinning the sapphire substrate;
b2. then removing the sapphire substrate (11), the buffer layer (12) and the u-AlGaN layer (13), and thinning the n-AlGaN layer (14);
c. etching epitaxial layer
Etching an epitaxial layer of the thinned product on nitride etching equipment, wherein the epitaxial layer is from an n-AlGaN layer (14), a quantum well layer (15) and p-GaN (16) to a Ti/Pt/Au metal layer;
d. electrode deposition
And then depositing new N electrodes on the N-AlGaN layer and depositing new P electrodes on the Ti/Pt/Au metal layer respectively to prepare the deep ultraviolet LED II (40) with the submicron vertical structure.
7. The submicron vertical structure deep ultraviolet LED two as set forth in claim 6, characterized in that: b, when the product after metal bonding in the step b is thinned, firstly thinning the original sapphire substrate to 200 +/-10 microns in step b1 through mechanical grinding and polishing;
and then step b2, removing the sapphire substrate (11), the buffer layer (12) and the u-AlGaN layer (13) by adopting a magneto-rheological polishing and thinning process, and thinning the n-AlGaN layer (14).
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