CN112404735B - Ingot peeling method and ingot peeling device - Google Patents
Ingot peeling method and ingot peeling device Download PDFInfo
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- CN112404735B CN112404735B CN202011237230.1A CN202011237230A CN112404735B CN 112404735 B CN112404735 B CN 112404735B CN 202011237230 A CN202011237230 A CN 202011237230A CN 112404735 B CN112404735 B CN 112404735B
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000012530 fluid Substances 0.000 claims abstract description 45
- 239000013078 crystal Substances 0.000 claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000013556 antirust agent Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 21
- 241000781618 Ochna pulchra Species 0.000 description 5
- 239000006249 magnetic particle Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The embodiment of the application provides an ingot stripping method and an ingot stripping device, and belongs to the technical field of semiconductor substrate preparation. The ingot peeling method includes: and focusing the laser beam at a preset depth in the crystal ingot in the magnetorheological fluid, and finishing scanning processing on a preset stripping surface at the preset depth of the crystal ingot through the laser beam so as to form a modified layer at the preset stripping surface. A magnetic field is applied to the magnetorheological fluid such that the magnetorheological fluid moves relative to the ingot to polish and remove the altered layer. The ingot peeling apparatus is used for performing an ingot peeling method. The laser stripping process can realize grinding and polishing, and the processing efficiency can be improved under the condition of effectively improving the quality of the stripped surface.
Description
Technical Field
The application relates to the technical field of semiconductor substrate preparation, in particular to an ingot stripping method and an ingot stripping device.
Background
The wafer, as a core material in the semiconductor technology field, directly determines the manufacturing level of semiconductor devices to a certain extent. The mode of directly obtaining the wafer by cutting the crystal ingot by the diamond tool has the disadvantages of large material loss and serious tool abrasion; the hard and brittle materials are very easy to generate fatal micro-cracks and edge breakage defects, so that the materials are scrapped.
The laser processing technology can solve the above problems well, but the surface quality of the peeled wafer still needs to be improved by subsequent grinding and polishing, so as to obtain the finished wafer. And the dispersed processing procedures not only reduce the processing efficiency, but also are difficult to control the stripping quality.
In the prior art, under some conditions, an auxiliary magnetic field is arranged on a laser processing device, the flowing and heat transfer of a molten pool and the moving direction of plasma in the laser processing process are effectively influenced by the magnetic field, so that the polishing of workpieces with large sizes and complex shapes is realized, and the defects of molten pool splashing, uneven cooling temperature and large polishing area in the polishing process can be overcome. Although the above method can effectively process the surface of the material, it cannot process the interior of the material, and thus the problem of the dispersion of the processing steps cannot be solved.
Disclosure of Invention
The application aims to provide an ingot stripping method and an ingot stripping device, which can realize grinding and polishing in the laser stripping process, and can improve the processing efficiency under the condition of effectively improving the quality of a stripped surface.
The embodiment of the application is realized as follows:
in a first aspect, an embodiment of the present application provides an ingot peeling method, including:
and focusing the laser beam at a preset depth in the crystal ingot in the magnetorheological fluid, and finishing scanning processing on a preset stripping surface at the preset depth of the crystal ingot through the laser beam so as to form a modified layer at the preset stripping surface.
A magnetic field is applied to the magnetorheological fluid such that the magnetorheological fluid moves relative to the ingot to polish and remove the altered layer.
In a second aspect, an embodiment of the present application provides an ingot peeling apparatus for performing the ingot peeling method provided in the first aspect, including: the laser module comprises a containing body, a laser module, a motion platform and a magnetic module.
Has a holding cavity for holding the magnetorheological fluid and the crystal ingot.
The laser assembly is used for emitting laser beams focused at a preset depth in the crystal ingot to the crystal ingot accommodated in the accommodating cavity.
The moving platform is arranged on the accommodating body and/or the laser assembly so that the laser beam can complete scanning processing of a preset stripping surface at a preset depth of the crystal ingot.
The magnetic assembly is used for applying a magnetic field to the magnetorheological fluid contained in the containing cavity.
The ingot stripping method and the ingot stripping device provided by the embodiment of the application have the beneficial effects that:
and focusing the laser beam on a preset depth position in the crystal ingot to perform scanning processing of a preset stripping surface, and forming a modified layer on the preset stripping surface. And applying a magnetic field to the magnetorheological fluid to enable the magnetorheological fluid to move relative to the crystal ingot, and grinding and polishing the modified layer by using the magnetic particles in the magnetorheological fluid to remove the modified layer. According to the method, the peeling can be performed by removing the modified layer, the grinding and polishing of the peeled surface can be realized, and the processing efficiency is improved under the condition that the quality of the peeled surface is effectively improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic flow diagram of a prior art ingot stripping process;
FIG. 2 is a view showing a state of peeling of an ingot in a ingot peeling method of the prior art;
fig. 3 is a schematic view of an ingot stripping apparatus implementing an ingot stripping method provided by an embodiment of the present application;
FIG. 4 is a schematic flow chart of a method of ingot stripping provided by an embodiment of the present application;
fig. 5 is a view showing a state of peeling of an ingot in an ingot peeling method provided by an embodiment of the present application.
Icon: 10-ingot; 20-a wafer; 30-magnetorheological fluid; 40-a laser beam; 50-presetting a stripping surface; 60-a region to be processed; 70-a processed area; 80-a magnetorheological region of action; 200-ingot stripping means; 210-a containing body; 211-a housing chamber; 212-a support platform; 220-a laser assembly; 221-a laser; 222-a beam expander; 223-mirror; 224-a focusing mirror; 230-a motion platform; 240-a magnetic assembly; 241-a first magnet; 242-second magnet.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
It should be noted that "and/or" in the present application, such as "scheme a and/or scheme B" means that the three modes of scheme a alone, scheme B alone, scheme a plus scheme B may be used.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it is to be noted that the terms "center", "upper", "lower", "inner", "outer", and the like refer to the orientation or positional relationship shown in the drawings, or the orientation or positional relationship which the product of the application is conventionally placed in use, which are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
Furthermore, the terms "parallel," "vertical," "horizontal," "vertical," and the like do not require that the components be absolutely parallel or vertical, that the components be absolutely horizontal or vertical, and that they be slightly inclined.
Referring to fig. 1 and 2, in the prior art, when a wafer 20 and other wafers are prepared by peeling an ingot 10 using a laser, a laser beam 40 is focused at a predetermined depth in the ingot 10, and a predetermined peeling surface 50 at the predetermined depth of the ingot 10 is scanned by the laser beam 40.
During the machining, in the zone corresponding to the preset stripping surface 50: the region to be scanned by the laser beam 40 is a region to be processed 60; the area where the laser beam 40 is scanned is the processed area 70, and the modified layer is formed at the processed area 70 where the laser scanning is completed. When the regions corresponding to the predetermined peeling surfaces 50 are changed into the processed regions 70, the scanning process of the predetermined peeling surfaces 50 is completed, and the modified layer is formed on the entire predetermined peeling surfaces 50.
In the prior art, after the scanning process of the predetermined peeling surface 50 is completed, the materials connected to both sides of the modified layer are directly separated by applying a force. As shown in fig. 1, the peeled surface of the wafer 20 obtained by peeling has poor flatness, and the wafer 20 needs to be further placed in a polishing device to polish the peeled surface of the wafer 20, so as to improve the peeled surface of the wafer 20 to meet the production and use requirements.
It is understood that the preset peeling surface 50 means one complete cross section of the ingot 10 in the present application, so that peeling of a wafer from the ingot 10 can be achieved after completion of the scanning process of the preset peeling surface 50.
The ingot peeling method and the ingot peeling apparatus 200 according to the embodiment of the present application will be specifically described below.
Referring to fig. 3 to 5, in a first aspect, an embodiment of the present invention provides an ingot peeling method, including: the laser beam 40 is focused at a preset depth in the crystal ingot 10 in the magnetorheological fluid 30, and the scanning processing of the preset stripping surface 50 at the preset depth of the crystal ingot 10 is completed through the laser beam 40, so that a modified layer is formed at the preset stripping surface 50. A magnetic field is applied to the magnetorheological fluid 30 so that the magnetorheological fluid 30 moves relative to the crystal ingot 10 to polish and remove the altered layer.
In a second aspect, an embodiment of the present application provides an ingot peeling apparatus 200 (shown in fig. 3) for performing the ingot peeling method provided by the embodiment of the first aspect, wherein the ingot peeling apparatus 200 includes a housing body 210, a laser assembly 220, a moving platform 230, and a magnet assembly 240. The accommodation body 210 has an accommodation cavity 211 for accommodating the magnetorheological fluid 30 and the crystal ingot 10. Laser assembly 220 is used to emit laser beam 40 focused at a predetermined depth within ingot 10 to ingot 10 received in receiving chamber 211. A motion stage 230 is provided to the receiving body 210 and/or the laser assembly 220 to enable the laser beam 40 to perform a scanning process of the predetermined peeling surface 50 at a predetermined depth of the ingot 10. The magnetic assembly 240 is used for applying a magnetic field to the magnetorheological fluid 30 contained in the containing cavity 211.
As shown in fig. 4 and 5, in the processing process of the embodiment of the present application, in the area corresponding to the preset peeling surface 50: the region to be scanned by the laser beam 40 is a region to be processed 60; the area where the laser beam 40 is scanned is the processed area 70, and a modified layer is formed at the processed area 70 where the laser beam is scanned; the region where the magnetorheological fluid 30 performs polishing and removing effects on the modified layer is a magnetorheological acting region 80.
In the embodiment of the present application, the scanning process of the preset peeling surface 50 is performed by focusing the laser beam 40 at a preset depth in the ingot 10, and the modified layer is formed at the preset peeling surface 50. By applying a magnetic field to the magnetorheological fluid 30, the magnetorheological fluid 30 moves relative to the crystal ingot 10, and the modified layer is polished by the magnetic particles in the magnetorheological fluid 30 to remove the modified layer. In the embodiment of the present application, the liquid level of the magnetorheological fluid 30 is not lower than the upper surface of the modified layer, so as to ensure that the magnetorheological fluid 30 can act on the modified layer. According to the method, the peeling can be performed by removing the modified layer, the grinding and polishing of the peeled surface can be realized, and the processing efficiency is improved under the condition that the quality of the peeled surface is effectively improved.
Optionally, the material of the ingot 10 is silicon carbide, gallium nitride, silicon or sapphire. The semiconductor substrate made of the material has wide application, and the modified layer formed by laser scanning can be effectively polished and removed by the magnetorheological fluid 30, so that the stripping speed is high, and the surface quality obtained by stripping is good.
Optionally, the magnetorheological fluid 30 includes a nano-scale diamond, a submicron-scale carbonyl iron powder, a dispersant and an antirust agent. The combination of the nano-scale diamond and the submicron carbonyl iron powder has proper grinding performance and grinding granularity, and can ensure that the modified layer can be better ground, polished and removed. The rust inhibitor enables the magnetic particles in the magnetorheological fluid 30 to have better stability, and the dispersant enables the magnetic particles in the magnetorheological fluid 30 to better disperse and flow, so that the magnetic particles in the magnetorheological fluid 30 can better move relative to the crystal ingot 10 under the action of a magnetic field to polish and remove the modified layer.
Continuing to refer to fig. 3, in ingot peeling apparatus 200, laser assembly 220 is disposed above accommodating body 210, and laser beam 40 emitted from laser assembly 220 is emitted in a vertical direction toward ingot 10 accommodated in accommodating chamber 211.
Further, the laser module 220 includes a laser 221, a beam expander 222, a mirror 223, and a focusing mirror 224. The laser 221, the beam expander 222 and the reflector 223 are sequentially arranged at intervals along the horizontal direction, and the beam expander 222 and the reflector 223 are arranged on the laser emitting side of the laser 221; the reflecting mirror 223 and the focusing mirror 224 are sequentially disposed at intervals in the vertical direction, and the focusing mirror 224 is disposed below the reflecting mirror 223.
The laser 221 is used to emit the horizontal laser beam 40 toward the beam expander 222. The beam expander 222 expands the laser beam 40 emitted from the laser 221 and emits the expanded laser beam to the reflector 223 in a horizontal direction. The reflector 223 is used for reflecting the laser expanded by the beam expander 222 and then emitting the laser to the focusing mirror 224 along the vertical direction, so that the space can be effectively saved. The focusing mirror 224 is used for focusing the laser beam 40 reflected by the reflecting mirror 223 and then emitting the laser beam to the preset depth of the crystal ingot 10, so that a better laser scanning effect is ensured.
Suitably, in the ingot peeling method, a horizontal radial plane in ingot 10 is selected as the predetermined peeling plane 50 of ingot 10 so that the predetermined peeling plane 50 is perpendicular to the laser beam 40 emitted from ingot 10, and the relative movement of the laser beam 40 and ingot 10 in the horizontal plane is easily controlled to complete the scanning process of the entire predetermined peeling plane 50.
Optionally, a support platform 212 is provided at the bottom of the receiving cavity 211 for securing the ingot 10 to the upper surface of the support platform 212.
In some exemplary embodiments, when the thickness of the wafer peeled by the ingot peeling method is a target thickness, the preset depth is made to exceed the target thickness by 50 μm to 150 μm, for example, but not limited to, any one or a range between any two of 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, and 150 μm. It has been found that laser scanning of the laser beam 40 causes the material in the predetermined peeling plane 50 and a thickness range above and below the predetermined peeling plane to form a modified layer. If the preset depth is smaller, the wafer to be stripped is easy to crack during laser scanning; if the predetermined depth is large, a product having a thick thickness is easily obtained, and a large amount of raw material is wasted from the ingot 10.
Alternatively, the thickness of the wafer stripped by the ingot stripping method is 200 μm to 600 μm, such as but not limited to any one or a range between 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm and 600 μm. The product with the thickness can better meet the use requirement and is beneficial to wide application.
Illustratively, the pulse width of the laser beam 40 is 200fs to 10ns, such as, but not limited to, a range between any one or any two of 200fs, 500fs, 1ps, 5ps, 10ps, 200ps, 500ps, 1ns, 3ns, 4ns, 5ns, 6ns, 8ns, and 10ns, so as to avoid excessive heat generation while ensuring a good scanning effect.
The wavelength of laser beam 40 is in the range of 355nm to 1064nm, such as, but not limited to, any one of 355nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, and 1064nm, or any two thereof, such that laser beam 40 is better able to transmit through ingot 10 to focus at a predetermined depth within ingot 10.
The power of the laser beam 40 is 1W to 10W, for example, but not limited to, any one of 1W, 2W, 3W, 4W, 5W, 6W, 7W, 8W, 9W, and 10W or a range between any two.
Illustratively, the scanning speed of laser beam 40 with respect to ingot 10 is in a range of from 50mm/s to 500mm/s, such as, but not limited to, any one or a range between any two of 50mm/s, 100mm/s, 150mm/s, 200mm/s, 250mm/s, 300mm/s, 350mm/s, 400mm/s, 450mm/s, and 500 mm/s.
It is understood that, in the examples of the application, in some embodiments, the scanning process of the preset peeling surface 50 by the laser beam 40 may be completed first, so that the modified layer is formed at the whole preset peeling surface 50; and applying a magnetic field to the magnetorheological fluid 30 to enable the magnetorheological fluid 30 to polish and remove the modified layer formed on the whole preset stripping surface 50. In other embodiments, when the laser beam 40 performs the local scanning processing on the predetermined peeling surface 50, the magnetorheological fluid 30 may be applied with a magnetic field to polish and remove the modified layer of the processed region 70.
In some possible embodiments, the step of performing scanning processing of the predetermined peeling surface 50 at the predetermined depth of the ingot 10 by the laser beam 40 includes: the laser beam 40 is relatively moved from the edge of the ingot 10 to the inside. The mode enables the modified layer to be generated from the edge of the crystal ingot 10 to the inside, and the magnetorheological fluid 30 is conveniently adopted to process the modified layer in time after laser scanning of partial region is completed.
Alternatively, in the step of performing the scanning process of the preset peeling surface 50 at the preset depth of the ingot 10 by the laser beam 40, the magnetic field is moved in the modified layer generating direction. In the embodiment of the present application, the generation direction of the modified layer refers to a mode in which the processed region 70 is directed to the unprocessed region.
As an example, the preset peeling surface 50 is scanned a plurality of times with the laser beam 40. In each scanning process, laser beam 40 moves in a first predetermined direction (the Y direction as shown in fig. 3) from one side of ingot 10 in the Y direction to the other side. In the plurality of scans, laser beam 40 moves in a second predetermined direction (the X direction as shown in fig. 3) from one side of ingot 10 in the X direction to the other side. The first preset direction and the second preset direction are both perpendicular to each other and are both parallel to the preset stripping surface 50. Alternatively, the magnetic field is moved in a moving direction (i.e., a second preset direction) of the plurality of scans. As shown in fig. 5, in the plurality of scans, when the laser beam moves from the left side to the right side of the ingot in the second preset direction, the magnetic field moves from the left side to the right side of the ingot in the second preset direction. It will be appreciated that in a plurality of scans, as the laser beam moves in a second predetermined direction from the right side to the left side of the ingot, the magnetic field likewise moves in the second predetermined direction from the right side to the left side of the ingot.
Further, in the ingot stripping device 200 of the present application, the magnet assembly 240 includes first and second magnets 241 and 242 having opposite magnetic properties, the first and second magnets 241 and 242 being adapted to be disposed on both sides of the ingot 10, for example, on both sides of the ingot in a first predetermined direction. In the above arrangement, the magnetic field has an acting magnetic induction line corresponding to the modified layer and parallel to the predetermined stripping surface 50, and the acting magnetic induction line extends along the first predetermined direction.
Suitably, in the ingot peeling method, the step of applying a magnetic field to the magnetorheological fluid 30 includes: first and second magnets 241 and 242 having opposite magnetic properties are provided on both sides of the ingot 10 such that the ingot is in a magnetic field formed between the first and second magnets 241 and 242 and a line of magnetic induction passing through the modified layer is straight parallel to the preset peeling surface 50.
The magnetic field formed through the ingot 10 by the first magnet 241 and the second magnet 242 is conveniently provided while the magnetic field movement is conveniently controlled by controlling the movement of the first magnet 241 and the second magnet 242. It is to be understood that in the embodiment of the present application, the arrangement form of the magnetic assembly 240 is not limited, and it is also advantageous that it can be arranged as a magnetic field generator.
Illustratively, ingot 10 is placed on motion stage 230, and ingot 10 is moved by motion stage 230 to cause relative motion between ingot 10 and laser beam 40. The relative movement of the crystal ingot 10 and the laser beam 40 is realized by adopting a mode that the movement platform 230 drives the crystal ingot 10 to move, and the operation is convenient and the controllability is good.
As one example, the motion stage 230 is configured to be movable in the X-direction, the Y-direction, and the Z-direction. Movement in the Z direction facilitates adjustment of the relative height of ingot 10 and facilitates control of the depth to which laser beam 40 is focused within ingot 10. The movement in the X and Y directions facilitates controlled movement of ingot 10 relative to laser beam 40 to perform scanning of predetermined cleave plane 50.
It is understood that in the ingot stripping method of the embodiment of the present application, the laser beam 40 may also be moved, for example, by disposing the laser assembly 220 to the accommodating body 210, to achieve control of the depth of focus and control of the scanning process. In the ingot peeling apparatus 200 of the present application, the motion stage 230 is exemplarily disposed at the bottom of the receiving body 210, and the motion stage 230 may also be disposed inside, for example, using the motion stage 230 as the support stage 212.
The features and properties of the present application are described in further detail below with reference to examples.
Example 1
An ingot peeling apparatus 200, as shown in fig. 3, comprises: the laser module comprises a housing body 210, a laser assembly 220, a motion platform 230 and a magnetic assembly 240. Wherein:
the accommodating body 210 has an accommodating cavity 211 for accommodating the magnetorheological fluid 30 and the ingot 10, and a support platform 212 for fixing the ingot 10 on the upper surface is arranged at the bottom in the accommodating cavity 211.
The laser assembly 220 is disposed above the accommodating body 210, and includes a laser 221, a beam expander 222, a reflector 223, and a focusing mirror 224. The laser 221, the beam expander 222 and the reflector 223 are sequentially arranged at intervals along the horizontal direction; a beam expander 222 and a mirror 223 are disposed on the laser emitting side of the laser 221, both above the support platform 212.
The moving platform 230 is disposed at the bottom of the accommodating body 210 and configured to be movable in X, Y and Z directions.
The magnet assembly 240 includes first and second magnets 241 and 242 having opposite magnetic properties, the first and second magnets 241 and 242 being adapted to be disposed on both sides of the ingot 10 in the X direction.
Example 2
An ingot peeling method, which is performed by using the ingot peeling device 200 provided in embodiment 1, includes:
the silicon carbide crystal ingot 10 to be stripped is placed on the upper surface of the supporting platform 212, and the magnetorheological fluid 30 is filled in the accommodating cavity 211.
The relative height of the ingot 10 is adjusted by moving the moving platform 230 in the Z direction according to the thickness of 350 μm of the silicon carbide wafer 20 to be peeled off to focus the laser beam 40 at a predetermined depth of 450 μm inside the silicon carbide ingot 10. The laser beam 40 has a pulse width of 4ns, a wavelength of 1064nm, and a power of 3W.
First and second magnets 241 and 242 having opposite magnetic properties are provided at both sides of the ingot 10 such that a magnetic field is formed between the first and second magnets 241 and 242. At this time, the magnetorheological fluid 30 will impact the modified layer of the processed region 70 under the action of the magnetic poles. Three regions, namely, a region to be processed 60, a processed region 70 and a magnetorheological region 80 are formed in the interior of the silicon carbide ingot 10.
As the laser lift-off process proceeds, the region to be processed 60 is continuously reduced in size. The processed area 70 is enlarged firstly, and then the size of the processed area 70 is kept stable along with the magneto-rheological action during scanning and processing; as the scanning process is completed, continued magnetorheological action causes the processed region 70 to gradually decrease. When the magnetorheological fluid 30 completely removes the modified layer formed in the silicon carbide crystal ingot 10, the silicon carbide wafer 20 peeled from the silicon carbide crystal ingot 10 can be obtained.
Example 3
An ingot peeling method is carried out by using the ingot peeling device 200 provided in example 1, which is different from example 2 in that:
The pulse width of the laser beam 40 is 10ps, the wavelength is 1030nm, and the power is 2W; the scanning speed was 400 mm/s.
Example 4
An ingot peeling method is carried out by using the ingot peeling device 200 provided in example 1, which is different from example 2 in that:
the ingot 10 to be peeled is a sapphire ingot 10.
The pulse width of the laser beam 40 is 290ps, the wavelength is 1030nm, and the power is 4W; the scanning speed was 350 mm/s.
Example 5
An ingot peeling method is carried out by using the ingot peeling device 200 provided in example 1, which is different from example 2 in that:
the pulse width of the laser beam 40 is 8ns, the wavelength is 532nm, and the power is 7W; the scanning speed was 70 mm/s.
Example 6
An ingot peeling method is carried out by using the ingot peeling device 200 provided in example 1, which is different from example 2 in that:
the pulse width of the laser beam 40 is 4ns, the wavelength is 800nm, and the power is 5W; the scanning speed was 230 mm/s.
Comparative example 1
An ingot peeling method is different from embodiment 2 in that peeling of the ingot 10 is performed in the accommodation chamber 211 in which the magnetorheological fluid 30 is not charged.
Test examples
The quality of the peeled surface of the wafer 20 peeled in the examples and the comparative examples was examined, and it was found that the difference in surface profile of the wafer 20 in examples 1 to 6 was less than 30 μm, and the surface quality was high; the wafer 20 of comparative example 1 had a surface profile difference of less than 100 μm and a poor surface quality. The surface quality of the wafer 20 of the example is significantly higher than that of the comparative example 1.
The embodiments described above are some, but not all embodiments of the present application. The detailed description of the embodiments of the present application is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Claims (10)
1. An ingot peeling method, comprising:
focusing a laser beam at a preset depth in an ingot in the magnetorheological fluid, and finishing scanning processing on a preset stripping surface at the preset depth of the ingot by the laser beam so as to form a modified layer at the preset stripping surface; and
applying a magnetic field to the magnetorheological fluid such that the magnetorheological fluid moves relative to the ingot to polish and remove the altered layer.
2. An ingot stripping method as set forth in claim 1, wherein the step of performing scanning processing of a predetermined stripping surface at the predetermined depth of the ingot by the laser beam comprises: the laser beam is relatively moved from the edge of the ingot to the inside.
3. An ingot stripping method as set forth in claim 2 wherein the laser beam scans the predetermined stripping surface a plurality of times, each scan moving from one side edge to the other side edge of the ingot in a first predetermined direction, and a plurality of scans moving from one side edge to the other side edge of the ingot in a second predetermined direction, the first and second predetermined directions being perpendicular to each other and parallel to the predetermined stripping surface.
4. An ingot stripping method as set forth in claim 3, wherein in the step of performing scanning processing of a predetermined stripping surface at the predetermined depth of the ingot by the laser beam, the magnetic field is moved in the second predetermined direction.
5. An ingot stripping method as set forth in claim 4 wherein the magnetic field has lines of action magnetic induction corresponding to the reformed layer and parallel to the predetermined stripping surface, the lines of action magnetic induction extending in the first predetermined direction.
6. An ingot peeling method as set forth in any one of claims 1 to 5, wherein the step of applying a magnetic field to the magnetorheological fluid comprises: providing first and second magnets of opposite magnetic polarity on opposite sides of the ingot such that the magnetic field is formed between the first and second magnets.
7. An ingot peeling method as set forth in claim 1, wherein when the thickness of the wafer peeled by the ingot peeling method is a target thickness, the predetermined depth is made to exceed the target thickness by 50 μm to 150 μm.
8. An ingot stripping method as set forth in claim 1 or 7 wherein the laser beam has a pulse width of 200fs to 10ns, a wavelength of 355nm to 1064nm and a power of 1W to 10W;
and/or the scanning speed of the laser beam relative to the crystal ingot is 50 mm/s-500 mm/s.
9. An ingot stripping method as set forth in claim 1 wherein the material of the ingot is silicon carbide, gallium nitride, silicon or sapphire;
and/or the magnetorheological fluid comprises nano-scale diamond, submicron-scale carbonyl iron powder, a dispersing agent and an antirust agent.
10. An ingot peeling apparatus for performing an ingot peeling method as set forth in any one of claims 1 to 9, characterized by comprising:
the accommodating body is provided with an accommodating cavity for accommodating the magnetorheological fluid and the crystal ingot;
the laser assembly is used for emitting the laser beam focused at the preset depth in the crystal ingot to the crystal ingot accommodated in the accommodating cavity;
the moving platform is arranged on the accommodating body and/or the laser assembly so that the laser beam can complete scanning processing on the preset stripping surface at the preset depth of the crystal ingot; and
and the magnetic assembly is used for applying the magnetic field to the magnetorheological fluid contained in the containing cavity.
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| CN113774494B (en) * | 2021-11-15 | 2022-03-29 | 浙江大学杭州国际科创中心 | Stripping method and stripping device for semi-insulating silicon carbide single crystal wafer |
| US11827997B2 (en) * | 2021-11-15 | 2023-11-28 | Zju-hangzhou Global Scientific And Technological Innovation Center | Stripping method and stripping device for silicon carbide single crystal wafers |
| CN114703455B (en) * | 2022-02-21 | 2023-11-28 | 松山湖材料实验室 | Method and device for preparing combined film |
| CN114523220A (en) * | 2022-04-19 | 2022-05-24 | 浙江大学杭州国际科创中心 | Silicon carbide wafer stripping method and stripping device |
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