CN219944946U - Silicon carbide substrate laser polishing device - Google Patents

Silicon carbide substrate laser polishing device Download PDF

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Publication number
CN219944946U
CN219944946U CN202321352257.4U CN202321352257U CN219944946U CN 219944946 U CN219944946 U CN 219944946U CN 202321352257 U CN202321352257 U CN 202321352257U CN 219944946 U CN219944946 U CN 219944946U
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mirror
silicon carbide
carbide substrate
laser
disposed
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CN202321352257.4U
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袁刚俊
苏兆鸣
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Tongwei Microelectronics Co ltd
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Tongwei Microelectronics Co ltd
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Abstract

The embodiment of the utility model provides a silicon carbide substrate laser polishing device, and relates to the technical field of polishing equipment. The silicon carbide substrate laser polishing device comprises a laser, an acousto-optic modulator, a light valve, a light beam processing assembly, a galvanometer control system, a lens and a bearing platform; the laser, the acousto-optic modulator, the light valve, the light beam processing assembly, the galvanometer control system and the lens are sequentially arranged along a laser propagation path, the bearing platform is used for bearing the silicon carbide substrate, and the bearing platform can drive the silicon carbide substrate to rotate and move along the X direction, the Y direction and the Z direction, wherein the X direction, the Y direction and the Z direction are mutually perpendicular. The silicon carbide substrate laser polishing device can improve the polishing efficiency and quality of the silicon carbide substrate.

Description

Silicon carbide substrate laser polishing device
Technical Field
The utility model relates to the technical field of polishing equipment, in particular to a silicon carbide substrate laser polishing device.
Background
The semiconductor industry is the heart of modern electronic industry, and at present, more than 90% of semiconductor devices and circuits, especially very large scale integrated circuits (English name: ultra Large Scale Integrated circuits, ULSI for short), are manufactured on high-purity high-quality monocrystalline polished wafers and epitaxial wafers. Therefore, it is important to obtain a wafer with extremely small surface micro defects and high flatness in the wafer manufacturing process.
In the conventional wafer polishing apparatuses, polishing flannelette is often used to polish the surface of a wafer.
The existing wafer polishing method has at least the following defects:
1. in the polishing process, grinding polishing liquid or water needs to be injected, polishing flannelette needs to be controlled to rotate, the polishing flannelette is a consumable material and needs to be replaced regularly, so that the overall cost is high;
2. the polishing velvet on the polishing velvet cloth is thicker, the density of the injected grinding polishing liquid or water is higher, so that the polishing velvet, the grinding polishing liquid or the water is difficult to penetrate into a damaged layer left in the slicing/grinding step, the polishing effect which can be finally achieved is limited, and the product quality and the yield are difficult to improve.
Disclosure of Invention
The utility model aims to provide a silicon carbide substrate laser polishing device which can improve the polishing efficiency and quality of a silicon carbide substrate.
Embodiments of the present utility model are implemented as follows:
the embodiment of the utility model provides a silicon carbide substrate laser polishing device, which comprises a laser, an acousto-optic modulator, a light valve, a light beam processing assembly, a galvanometer control system, a lens and a bearing platform;
the laser, the acousto-optic modulator, the light valve, the light beam processing assembly, the galvanometer control system and the lens are sequentially arranged along a laser propagation path, the bearing platform is used for bearing the silicon carbide substrate, and the bearing platform can drive the silicon carbide substrate to rotate and move along the X direction, the Y direction and the Z direction, wherein the X direction, the Y direction and the Z direction are mutually perpendicular.
The silicon carbide substrate laser polishing device provided by the embodiment of the utility model has the beneficial effects that:
1. the laser polishing principle adopted by the embodiment does not need to inject grinding polishing liquid or water or moving or frequently-replaced consumable materials, so that the cost is low;
2. the laser polishing adopted in the embodiment belongs to non-contact type, no physical pressure is applied to the substrate in the whole process, and materials attached to the surface and subsurface of the substrate in a weak chemical bond form are physically removed by laser, so that the chemical bond bonding of the remained materials is stronger, the quality is higher, and the higher device yield and the yield are facilitated;
3. the laser polishing has high polishing efficiency, and the bearing platform can drive the silicon carbide substrate to rotate and move along the X direction, the Y direction and the Z direction, so that the whole surface of the substrate can be rapidly polished, and the polishing efficiency of the substrate is improved.
In an alternative embodiment, the bearing platform comprises a supporting flat plate, a driving motor, a telescopic shaft and a driving base which are sequentially connected, the supporting flat plate is used for bearing the silicon carbide substrate, the driving motor is used for driving the supporting flat plate to rotate, the telescopic shaft is used for driving the supporting flat plate and the driving motor to move along the Z direction, and the driving base is used for driving the telescopic shaft, the supporting flat plate and the driving motor to move along the X direction and the Y direction.
Therefore, the bearing platform is simple and reliable in structural form, and can also drive the substrate to rotate and move along the X direction, the Y direction and the Z direction.
In an alternative embodiment, the support plate is arranged vertically and the drive motor is arranged horizontally.
In an alternative embodiment, the load-bearing platform further comprises an adhesive layer disposed on a surface of the support plate, and the silicon carbide substrate is adhered to the adhesive layer.
In an alternative embodiment, the beam processing assembly includes a beam expander, a first mirror, and a second mirror disposed in sequence along a propagation path of the laser light, the first mirror and the second mirror being configured to change a propagation direction of the laser light.
In an alternative embodiment, the first mirror and the second mirror are symmetrically arranged about a midline of the first mirror, and the incident light ray of the first mirror, the reflected light ray of the second mirror, and the midline of the first mirror and the second mirror are all horizontally arranged.
Therefore, the vertical placing and polishing of the substrate are realized, and the silicon carbide substrate laser polishing device has the advantages of simple structural form and small occupied space.
In an alternative embodiment, the support plate is disposed horizontally and the drive motor is disposed vertically.
In an alternative embodiment, the beam processing assembly includes a beam expander, a first mirror, a second mirror, and a third mirror disposed in sequence along a propagation path of the laser light, the first mirror, the second mirror, and the third mirror being configured to change a propagation direction of the laser light.
In an alternative embodiment, the first mirror and the second mirror are symmetrically arranged about a central line of the first mirror and the second mirror, the third mirror is parallel to the second mirror, the incident light ray of the first mirror, the reflected light ray of the second mirror, and the central lines of the first mirror and the second mirror are all horizontally arranged, and the reflected light ray of the third mirror is vertically arranged.
Therefore, the mode of horizontally placing and polishing the substrate is realized, and the silicon carbide substrate laser polishing device has simple structural form and small occupied space.
In an alternative embodiment, the laser emits laser light having a wavelength of 355nm to 1064nm, a pulse width of less than 10ps, a pulse capability of greater than 1 μJ, and a frequency of greater than 10kHz.
Thus, the laser emitted by the laser has enough energy to polish the substrate, and the polishing efficiency is high.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a silicon carbide substrate laser polishing apparatus according to a first embodiment of the present utility model;
fig. 2 is a schematic structural diagram of a silicon carbide substrate laser polishing apparatus according to a second embodiment of the present utility model.
Icon: a 100-silicon carbide substrate laser polishing device; 1-a laser; 2-an acousto-optic modulator; 3-a light valve; 4-beam expander; 5-a first mirror; 6-a second mirror; 7-a third mirror; 8-a galvanometer control system; 9-lens; 10-a support plate; 11-a drive motor; 12-a telescopic shaft; 13-a drive base; 200-substrate.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present utility model, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present utility model and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present utility model, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
First embodiment
Referring to fig. 1, the present embodiment provides a silicon carbide substrate laser polishing apparatus 100, where the silicon carbide substrate laser polishing apparatus 100 includes a laser 1, an acousto-optic modulator 2, a light valve 3, a beam processing component, a galvanometer control system 8, a lens 9 and a carrier platform. Wherein the beam processing assembly comprises a first mirror 5 and a second mirror 6 arranged in sequence along the propagation path of the laser light.
Specifically, a laser 1, an acousto-optic modulator 2, a light valve 3, a first reflecting mirror 5, a second reflecting mirror 6, a galvanometer control system 8, a lens 9 and a bearing platform are sequentially arranged along a laser propagation path.
The bearing platform comprises a supporting flat plate 10, a driving motor 11, a telescopic shaft 12 and a driving base 13 which are sequentially connected, the supporting flat plate 10 is used for bearing a silicon carbide substrate 200, the supporting flat plate 10 is vertically arranged in fig. 1, the bearing platform further comprises an adhesive layer, the adhesive layer is arranged on the surface of the supporting flat plate 10, and the silicon carbide substrate 200 is adhered to the adhesive layer in order to enable the substrate 200 to be stably connected to the supporting flat plate 10.
The driving motor 11 is horizontally arranged. The driving motor 11 is used for driving the supporting plate 10 and the substrate 200 to rotate, so that when the laser emitted by the lens 9 irradiates on one position on the substrate 200, the driving motor 11 drives the supporting plate 10 and the substrate 200 to rotate, and polishing can be realized on one position on the surface of the substrate 200.
The telescopic shaft 12 is vertically arranged, and the telescopic shaft 12 is used for driving the support plate 10 and the driving motor 11 to move along the Z direction, wherein the Z direction refers to the vertical direction. The telescopic shaft 12 can be a telescopic cylinder.
The driving base 13 is used to drive the telescopic shaft 12, the support plate 10, and the driving motor 11 to move in the X-direction and the Y-direction. The X direction and the Y direction are parallel to the horizontal plane, which is equivalent to that the driving base 13 can drive the driving telescopic shaft 12, the supporting flat plate 10, the driving motor 11 and the substrate 200 to move along the transverse direction and the vertical direction in the horizontal plane. The specific driving structure of the driving base 13 may be that a first screw rod assembly extending along the X direction is provided, a second screw rod assembly extending along the Y direction is provided on the first screw rod assembly, and the telescopic shaft 12 is mounted on the second screw rod assembly, that is, the first screw rod assembly may drive the second screw rod assembly and the telescopic shaft 12 to move along the X direction, and the second screw rod assembly may drive the telescopic shaft 12 to move along the Y direction. In this way, the bearing platform has a simple and reliable structure, and can also drive the substrate 200 to rotate and move along the X direction, the Y direction and the Z direction.
In order to achieve that the laser energy emitted from the lens 9 is horizontally emitted to the surface of the substrate 200, in this embodiment, the beam processing assembly includes a beam expander 4, a first mirror 5, and a second mirror 6 sequentially disposed along the propagation path of the laser, and the first mirror 5 and the second mirror 6 are used to change the propagation direction of the laser. Specifically, the first reflecting mirror 5 and the second reflecting mirror 6 are symmetrically arranged about the center line of both, and the incident light of the first reflecting mirror 5, the reflected light of the second reflecting mirror 6, and the center lines of the first reflecting mirror 5 and the second reflecting mirror 6 are all horizontally arranged. Thus, the substrate 200 is vertically placed and polished, and the silicon carbide substrate laser polishing device 100 has a simple structure and occupies a small space.
The combined action of the first reflecting mirror 5 and the second reflecting mirror 6 makes the laser emitted by the laser 1 complete 180-degree turning, and avoids the arrangement of all components in the silicon carbide substrate laser polishing device 100 along a straight line, so that the occupied area of the device can be reduced.
The working principle of the silicon carbide substrate laser polishing device 100 provided in this embodiment is as follows:
firstly, laser emitted by a laser 1 sequentially passes through an acousto-optic modulator 2, a light valve 3, a beam expander 4, a first reflecting mirror 5, a second reflecting mirror 6, a galvanometer control system 8 and a lens 9, and irradiates the surface of a substrate 200; wherein, the wavelength of the laser emitted by the laser 1 is 355 nm-1064 nm, the pulse width is less than 10ps, the pulse capacity is more than 1 mu J, and the frequency is more than 10kHz. Thus, the laser light emitted from the laser 1 has sufficient energy to polish the substrate 200, and the polishing efficiency is high.
Then, according to a preset program, the bearing platform is controlled to drive the silicon carbide substrate 200 to rotate and move along the X direction, the Y direction and the Z direction, so that the polishing treatment of the whole surface of the substrate 200 is realized.
The silicon carbide substrate laser polishing device 100 provided in this embodiment has the following advantages:
1. the laser polishing principle adopted by the embodiment does not need to inject grinding polishing liquid or water or moving or frequently-replaced consumable materials, so that the cost is low;
2. the laser polishing adopted in this embodiment belongs to non-contact type, no physical pressure is applied to the substrate 200 in the whole process, and the materials attached to the surface and subsurface of the substrate 200 in the form of weak chemical bonds are physically removed by laser, so that the chemical bonds of the materials left are stronger, the quality is higher, and the higher device yield and the yield are facilitated;
3. the laser polishing has high polishing efficiency, and the bearing platform can drive the silicon carbide substrate 200 to rotate and move along the X direction, the Y direction and the Z direction, so that the whole surface of the substrate 200 can be rapidly polished, and the polishing efficiency of the substrate 200 is improved.
Second embodiment
Referring to fig. 2, the present embodiment provides a silicon carbide substrate laser polishing apparatus 100, which has a similar structure to the silicon carbide substrate laser polishing apparatus 100 provided in the first embodiment, and is different in that the present embodiment can implement the horizontal placement of the substrate 200 and complete the laser polishing.
Specifically, the bearing platform comprises a supporting flat plate 10, a driving motor 11, a telescopic shaft 12 and a driving base 13 which are sequentially connected, the supporting flat plate 10 is horizontally arranged in fig. 2, the substrate 200 can be stably placed on the supporting flat plate 10, and a complex structure for fixing the substrate 200 is not required. Correspondingly, the driving motor 11 and the telescopic shaft 12 are vertically arranged.
To achieve that the laser light emitted from the lens 9 can be directed vertically onto the surface of the substrate 200, in this embodiment, the beam processing assembly includes a beam expander 4, a first mirror 5, a second mirror 6, and a third mirror 7 sequentially disposed along the propagation path of the laser light, and the first mirror 5, the second mirror 6, and the third mirror 7 are used to change the propagation direction of the laser light.
Specifically, the first reflecting mirror 5 and the second reflecting mirror 6 are symmetrically arranged about the center line of the two, the third reflecting mirror 7 is parallel to the second reflecting mirror 6, the incident light of the first reflecting mirror 5, the reflected light of the second reflecting mirror 6, and the center line of the first reflecting mirror 5 and the second reflecting mirror 6 are all horizontally arranged, and the reflected light of the third reflecting mirror 7 is vertically arranged. Thus, the substrate 200 is horizontally placed and polished, and the silicon carbide substrate laser polishing device 100 has a simple structure and occupies a small space.
The above is only a preferred embodiment of the present utility model, and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.

Claims (10)

1. The silicon carbide substrate laser polishing device is characterized by comprising a laser (1), an acousto-optic modulator (2), a light valve (3), a light beam processing assembly, a galvanometer control system (8), a lens (9) and a bearing platform;
the laser device comprises a laser device (1), an acousto-optic modulator (2), a light valve (3), a light beam processing assembly, a galvanometer control system (8) and a lens (9) which are sequentially arranged along a laser propagation path, wherein a bearing platform is used for bearing a silicon carbide substrate (200), and can drive the silicon carbide substrate (200) to rotate and move along an X direction, a Y direction and a Z direction, wherein the X direction, the Y direction and the Z direction are mutually perpendicular.
2. The silicon carbide substrate laser polishing device according to claim 1, wherein the carrying platform comprises a supporting flat plate (10), a driving motor (11), a telescopic shaft (12) and a driving base (13) which are sequentially connected, the supporting flat plate (10) is used for carrying the silicon carbide substrate (200), the driving motor (11) is used for driving the supporting flat plate (10) to rotate, the telescopic shaft (12) is used for driving the supporting flat plate (10) and the driving motor (11) to move along the Z direction, and the driving base (13) is used for driving the telescopic shaft (12), the supporting flat plate (10) and the driving motor (11) to move along the X direction and the Y direction.
3. The silicon carbide substrate laser polishing apparatus as set forth in claim 2, wherein the support plate (10) is disposed vertically and the driving motor (11) is disposed horizontally.
4. A silicon carbide substrate laser polishing apparatus according to claim 3, wherein the carrier stage further comprises an adhesive layer provided on a surface of the support plate (10), the silicon carbide substrate (200) being adhered to the adhesive layer.
5. A silicon carbide substrate laser polishing apparatus according to claim 3, wherein the beam processing assembly comprises a beam expander (4), a first mirror (5) and a second mirror (6) disposed in this order along a propagation path of the laser light, the first mirror (5) and the second mirror (6) being for changing a propagation direction of the laser light.
6. The silicon carbide substrate laser polishing apparatus as set forth in claim 5, wherein the first mirror (5) and the second mirror (6) are disposed symmetrically about a center line of both, and an incident light ray of the first mirror (5), a reflected light ray of the second mirror (6), and center lines of the first mirror (5) and the second mirror (6) are disposed horizontally.
7. The silicon carbide substrate laser polishing apparatus as set forth in claim 2, wherein the support plate (10) is disposed horizontally and the driving motor (11) is disposed vertically.
8. The silicon carbide substrate laser polishing apparatus according to claim 7, wherein the beam processing assembly comprises a beam expander (4), a first mirror (5), a second mirror (6), and a third mirror (7) disposed in this order along a propagation path of the laser light, the first mirror (5), the second mirror (6), and the third mirror (7) being configured to change a propagation direction of the laser light.
9. The silicon carbide substrate laser polishing apparatus according to claim 8, wherein the first mirror (5) and the second mirror (6) are symmetrically disposed about a center line of both, the third mirror (7) is parallel to the second mirror (6), an incident light ray of the first mirror (5), a reflected light ray of the second mirror (6), center lines of the first mirror (5) and the second mirror (6) are all disposed horizontally, and a reflected light ray of the third mirror (7) is disposed vertically.
10. The silicon carbide substrate laser polishing apparatus as claimed in claim 1, wherein the laser (1) emits laser light having a wavelength of 355nm to 1064nm, a pulse width of less than 10ps, a pulse capability of more than 1 μj, and a frequency of more than 10kHz.
CN202321352257.4U 2023-05-30 2023-05-30 Silicon carbide substrate laser polishing device Active CN219944946U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202321352257.4U CN219944946U (en) 2023-05-30 2023-05-30 Silicon carbide substrate laser polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202321352257.4U CN219944946U (en) 2023-05-30 2023-05-30 Silicon carbide substrate laser polishing device

Publications (1)

Publication Number Publication Date
CN219944946U true CN219944946U (en) 2023-11-03

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Application Number Title Priority Date Filing Date
CN202321352257.4U Active CN219944946U (en) 2023-05-30 2023-05-30 Silicon carbide substrate laser polishing device

Country Status (1)

Country Link
CN (1) CN219944946U (en)

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