JP2011031359A - Polishing tool, polishing device, and polishing machining method - Google Patents

Polishing tool, polishing device, and polishing machining method Download PDF

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JP2011031359A
JP2011031359A JP2009181892A JP2009181892A JP2011031359A JP 2011031359 A JP2011031359 A JP 2011031359A JP 2009181892 A JP2009181892 A JP 2009181892A JP 2009181892 A JP2009181892 A JP 2009181892A JP 2011031359 A JP2011031359 A JP 2011031359A
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polishing
polished
workpiece
cleaning
peripheral
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Nobuyuki Takada
暢行 高田
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Disco Abrasive Syst Ltd
株式会社ディスコ
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<P>PROBLEM TO BE SOLVED: To provide a polishing tool, a polishing device, and a polishing machining method capable of achieving different kinds of polishing machining without enlarging a device. <P>SOLUTION: A polishing surface of the polishing tool 43 is composed of a center polishing surface formed by a first polishing pad 45, and having size larger than the outer shape of a polished surface of work; and an outer peripheral polishing surface formed by a second polishing pad 46, and surrounding the outer periphery of the center polishing surface. The center polishing surface and the outer peripheral polishing surface form a level difference, and the outer peripheral polishing surface projects out from the center polishing surface. Therefore, the polishing tool 43 has a recessed shape in a cross sectional view which is recessed inside as a whole. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、半導体ウェーハ等のワークを研磨加工する研磨工具、研磨装置および研磨加工方法に関するものである。   The present invention relates to a polishing tool, a polishing apparatus, and a polishing method for polishing a workpiece such as a semiconductor wafer.
半導体ウェーハは、近年の各種電子機器の小型化・薄型化に伴い、より一層の薄化が求められている。このため、半導体ウェーハの厚さが例えば100μm以下と薄くなった場合、チップ化した後の強度の維持が問題になっている。そこで、研削処理を行った後に加工面を研磨加工することで、研削処理による機械的ダメージを除去する技術が用いられており、研削と研磨の両方の加工を行える加工装置も提案されている(例えば特許文献1参照)。   Semiconductor wafers are required to be further thinned with the recent reduction in size and thickness of various electronic devices. For this reason, when the thickness of a semiconductor wafer becomes as thin as 100 μm or less, for example, maintenance of strength after being formed into a chip becomes a problem. Therefore, a technique for removing mechanical damage due to the grinding process by polishing the processed surface after the grinding process has been used, and a processing apparatus capable of performing both grinding and polishing has also been proposed ( For example, see Patent Document 1).
特開2001−252853号公報JP 2001-252853 A
ところで、半導体ウェーハを研磨加工する際、高い研磨品質を達成するため、例えばまず粗研磨を行い、この粗研磨の後に仕上げ研磨を行う等、種類の異なる研磨加工を組み合わせて行う場合がある。しかしながら、このような種類の異なる研磨加工を1つの装置で実現しようとすると、その種類毎に個別の機構を設ける必要があるため、装置が大型化するという問題があった。   By the way, when polishing a semiconductor wafer, in order to achieve high polishing quality, for example, rough polishing is first performed, and final polishing is performed after the rough polishing. However, when such different types of polishing processing are to be realized with one apparatus, it is necessary to provide an individual mechanism for each type.
本発明は、上記に鑑みて為されたものであり、装置の大型化を伴わずに異なる種類の研磨加工を実現可能な研磨工具、研磨装置および研磨加工方法を提供することを目的とする。   The present invention has been made in view of the above, and an object thereof is to provide a polishing tool, a polishing apparatus, and a polishing method that can realize different types of polishing without increasing the size of the apparatus.
上記した課題を解決し、目的を達成するために、本発明にかかる研磨工具は、研磨面を有し、該研磨面によって研磨対象のワークの被研磨面を研磨加工する研磨工具であって、前記研磨面は、前記ワークの被研磨面の外形以上の大きさを有する中央研磨面と、該中央研磨面の外周を囲繞する外周研磨面とで構成され、前記中央研磨面と前記外周研磨面とが段差を形成して前記外周研磨面が前記中央研磨面から突出していることを特徴とする。   In order to solve the above-described problems and achieve the object, a polishing tool according to the present invention has a polishing surface, and is a polishing tool for polishing a surface to be polished of a workpiece to be polished by the polishing surface, The polishing surface includes a central polishing surface having a size equal to or larger than an outer shape of a surface to be polished of the workpiece, and an outer peripheral polishing surface surrounding an outer periphery of the central polishing surface, and the central polishing surface and the outer peripheral polishing surface Forming a step, and the outer peripheral polishing surface protrudes from the central polishing surface.
また、本発明にかかる研磨工具は、上記発明において、前記中央研磨面と前記外周研磨面とが異なる研磨部材で形成されたことを特徴とする。   The polishing tool according to the present invention is characterized in that, in the above invention, the central polishing surface and the outer peripheral polishing surface are formed of different polishing members.
また、本発明にかかる研磨装置は、ワークを保持する保持面を有する保持手段と、研磨面を有し、前記保持手段の保持面に保持された前記ワークの被研磨面を研磨加工する研磨工具および該研磨工具を回転可能に支持するスピンドルを有する研磨手段と、前記研磨工具の研磨面と前記保持手段の保持面とを互いに平行な面内で相対的に移動させる平行移動手段と、前記研磨工具の研磨面と前記保持手段の保持面とを該保持手段の保持面の直交方向に相対的に移動させる直交移動手段と、を備え、前記研磨工具の研磨面は、前記ワークの被研磨面の外形以上の大きさを有する中央研磨面と、該中央研磨面の外周を囲繞する外周研磨面とで構成され、前記中央研磨面と前記外周研磨面とが段差を形成して前記外周研磨面が前記中央研磨面から突出していることを特徴とする。   Further, a polishing apparatus according to the present invention includes a holding unit having a holding surface for holding a workpiece, and a polishing tool having a polishing surface and polishing the surface to be polished of the workpiece held by the holding surface of the holding unit. Polishing means having a spindle that rotatably supports the polishing tool, parallel movement means for relatively moving the polishing surface of the polishing tool and the holding surface of the holding means in a plane parallel to each other, and the polishing Orthogonal movement means for relatively moving a polishing surface of the tool and a holding surface of the holding means in a direction orthogonal to the holding surface of the holding means, and the polishing surface of the polishing tool is a surface to be polished of the workpiece And a peripheral polishing surface surrounding an outer periphery of the central polishing surface, the central polishing surface and the peripheral polishing surface forming a step, and the peripheral polishing surface Protrudes from the central polishing surface And wherein the are.
また、本発明にかかる研磨装置は、上記発明において、少なくとも前記外周研磨面を洗浄する研磨面洗浄手段と、前記ワークの被研磨面を洗浄する被研磨面洗浄手段と、を備えることを特徴とする。   The polishing apparatus according to the present invention is characterized in that, in the above invention, the polishing apparatus includes at least a polishing surface cleaning unit that cleans the outer peripheral polishing surface, and a polishing surface cleaning unit that cleans the polishing surface of the workpiece. To do.
また、本発明にかかる研磨加工方法は、研磨面を有する研磨工具を用い、前記研磨面によって研磨対象のワークの被研磨面を研磨加工する研磨加工方法であって、前記研磨面は、前記ワークの被研磨面の外形以上の大きさを有する中央研磨面と該中央研磨面の外周を囲繞する外周研磨面とで構成され、前記中央研磨面と前記外周研磨面とが段差を形成して前記外周研磨面が前記中央研磨面から突出しており、前記被研磨面を露出させた状態で前記ワークを保持する保持工程と、前記ワークの被研磨面に前記中央研磨面を接触させて前記ワークの被研磨面を研磨加工する第1の研磨工程と、前記ワークの被研磨面に前記外周研磨面を接触させて前記ワークの被研磨面を研磨加工する第2の研磨工程と、を含むことを特徴とする。   The polishing method according to the present invention is a polishing method for polishing a surface to be polished of a workpiece to be polished by the polishing surface using a polishing tool having a polishing surface, wherein the polishing surface is the workpiece A central polishing surface having a size equal to or larger than the outer shape of the surface to be polished and an outer peripheral polishing surface surrounding the outer periphery of the central polishing surface, the central polishing surface and the outer peripheral polishing surface forming a step, An outer peripheral polishing surface protrudes from the central polishing surface, and a holding step of holding the workpiece in a state where the polished surface is exposed; and the central polishing surface is brought into contact with the polished surface of the workpiece. A first polishing step for polishing the surface to be polished, and a second polishing step for polishing the surface to be polished of the workpiece by bringing the outer peripheral polishing surface into contact with the surface to be polished of the workpiece. Features.
また、本発明にかかる研磨加工方法は、上記発明において、前記第1の研磨工程の後、前記第2の研磨工程の前に少なくとも前記外周研磨面および前記ワークの被研磨面を洗浄する洗浄工程を含むことを特徴とする。   Further, the polishing method according to the present invention is the cleaning step of cleaning at least the outer peripheral polishing surface and the surface to be polished of the workpiece after the first polishing step and before the second polishing step in the above invention. It is characterized by including.
本発明によれば、ワークの被研磨面を研磨加工する研磨工具の研磨面を、ワークの被研磨面の外形以上の大きさを有する中央研磨面と、中央研磨面の外周を囲繞する外周研磨面とで構成することができる。そして、中央研磨面と外周研磨面とが段差を形成して外周研磨面が中央研磨面から突出するように研磨工具の研磨面を構成することができる。これによれば、中央研磨面と外周研磨面とを個別に用い、ワークの被研磨面に対して中央研磨面による研磨加工と外周研磨面による研磨加工とが行える。したがって、装置の大型化を伴わずに異なる種類の研磨加工が実現できる。   According to the present invention, the polishing surface of the polishing tool for polishing the surface to be polished of the workpiece is divided into a central polishing surface having a size equal to or larger than the outer shape of the surface to be polished of the workpiece, and outer periphery polishing surrounding the outer periphery of the central polishing surface. It can consist of a surface. The polishing surface of the polishing tool can be configured such that the central polishing surface and the outer peripheral polishing surface form a step so that the outer peripheral polishing surface protrudes from the central polishing surface. According to this, the center polishing surface and the outer periphery polishing surface are used separately, and the polishing process by the center polishing surface and the polishing process by the outer periphery polishing surface can be performed on the surface to be polished of the workpiece. Therefore, different types of polishing can be realized without increasing the size of the apparatus.
図1は、ワークの表面側の構成例を示す斜視図である。FIG. 1 is a perspective view illustrating a configuration example on the surface side of a workpiece. 図2は、研磨装置の構成例を示す斜視図である。FIG. 2 is a perspective view showing a configuration example of the polishing apparatus. 図3は、研磨装置の一部を拡大して示す斜視図である。FIG. 3 is an enlarged perspective view showing a part of the polishing apparatus. 図4は、研磨工具およびチャックテーブルの構成を説明する側面図である。FIG. 4 is a side view illustrating the configuration of the polishing tool and the chuck table. 図5は、研磨工具の構成を説明する斜視図である。FIG. 5 is a perspective view illustrating the configuration of the polishing tool. 図6は、粗研磨工程を説明する説明図である。FIG. 6 is an explanatory diagram for explaining the rough polishing step. 図7は、研磨面洗浄工程を説明する説明図である。FIG. 7 is an explanatory diagram for explaining the polishing surface cleaning step. 図8は、被研磨面洗浄工程を説明する説明図である。FIG. 8 is an explanatory view for explaining the polished surface cleaning step. 図9は、仕上げ研磨工程を説明する説明図である。FIG. 9 is an explanatory diagram for explaining the finish polishing step.
以下、本発明を実施するための形態である研磨工具、研磨装置および研磨加工方法について図面を参照して説明する。   Hereinafter, a polishing tool, a polishing apparatus, and a polishing method as embodiments for carrying out the present invention will be described with reference to the drawings.
まず、本実施の形態の研磨装置が研磨対象とするワークについて説明する。図1は、研磨装置が研磨対象とするワーク1の表面側の構成例を示す斜視図である。図1に示すように、ワーク1は、略円板形状を有し、例えば表面に複数のデバイス2が格子状に形成されたものである。また、図1に示すワーク1には、結晶方位を示すノッチ3が形成されている。研磨装置は、このワーク1の表面を被保持面として保持した状態で裏面を被研磨面として研磨加工する。なお、図1中には図示していないが、被保持面となるワーク1の表面に、このワーク1の表面を保護するための保護テープを貼着しておくのが望ましい。   First, a workpiece to be polished by the polishing apparatus of the present embodiment will be described. FIG. 1 is a perspective view showing a configuration example of the surface side of a workpiece 1 to be polished by the polishing apparatus. As shown in FIG. 1, the workpiece 1 has a substantially disk shape. For example, a plurality of devices 2 are formed in a lattice shape on the surface. Further, the work 1 shown in FIG. 1 has a notch 3 indicating a crystal orientation. The polishing apparatus polishes the back surface of the workpiece 1 as the surface to be polished while holding the surface of the work 1 as the surface to be held. Although not shown in FIG. 1, it is desirable to attach a protective tape for protecting the surface of the work 1 to the surface of the work 1 serving as a surface to be held.
ここで、ワーク1の具体例としては、特に限定されないが、例えば、シリコンウェーハやGaAs等の半導体ウェーハ、セラミック、ガラス、サファイア(Al23)系の無機材料基板、板状金属や樹脂等の延性材料、さらには、ミクロンオーダーからサブミクロンオーダーの平坦度(TTV:total thickness variation:ワークの被研磨面を基準面として厚み方向に測定した高さの被研磨面全面における最大値と最小値の差)が要求される各種加工材料が挙げられる。 Here, a specific example of the workpiece 1 is not particularly limited, but for example, a silicon wafer, a semiconductor wafer such as GaAs, ceramic, glass, a sapphire (Al 2 O 3 ) -based inorganic material substrate, a plate-like metal, a resin, or the like. Ductility materials, and flatness on the order of microns to submicrons (TTV: total thickness variation: the maximum and minimum values of the entire surface to be polished measured in the thickness direction with the surface to be polished of the workpiece as the reference surface Various processing materials that require a difference between the two.
つぎに、本実施の形態の研磨装置について説明する。図2は、本実施の形態の研磨装置10の構成例を示す斜視図であり、図3は、研磨装置10の一部を拡大して示す斜視図である。また、図4は、研磨装置10を構成する研磨工具43および保持手段としてのチャックテーブル32の構成を説明する側面図であり、研磨工具43の周辺および後述するワーク研磨加工域E2に位置するチャックテーブル32の側面を示している。そして、図5は、研磨工具43の構成を説明する斜視図であり、その研磨面側を上にして示している。   Next, the polishing apparatus of the present embodiment will be described. FIG. 2 is a perspective view showing a configuration example of the polishing apparatus 10 of the present embodiment, and FIG. 3 is an enlarged perspective view showing a part of the polishing apparatus 10. FIG. 4 is a side view for explaining the configuration of the polishing tool 43 constituting the polishing apparatus 10 and the chuck table 32 as a holding means, and the chuck located in the periphery of the polishing tool 43 and in a workpiece polishing processing area E2 described later. The side of the table 32 is shown. FIG. 5 is a perspective view illustrating the configuration of the polishing tool 43, with the polishing surface side facing up.
本実施の形態の研磨装置10は、研磨工具43を用いてワーク1の被研磨面を研磨加工するものであり、図2に示すように、装置ハウジング20を備える。装置ハウジング20は、細長く延在する直方体形状の主部21と、この主部21の後端部(図3において右上端)に設けられ、実質上鉛直上方に延びる直立壁22とを有する。   The polishing apparatus 10 according to the present embodiment polishes the surface to be polished of the workpiece 1 using a polishing tool 43, and includes an apparatus housing 20 as shown in FIG. The apparatus housing 20 has a rectangular parallelepiped main portion 21 that extends elongated and an upright wall 22 that is provided at a rear end portion (upper right end in FIG. 3) of the main portion 21 and extends substantially vertically upward.
主部21の上面には、チャックテーブル機構30が配設されている。チャックテーブル機構30は、支持基台31とこの支持基台31上に配設された円板形状のチャックテーブル32とを具備している。   A chuck table mechanism 30 is disposed on the upper surface of the main portion 21. The chuck table mechanism 30 includes a support base 31 and a disk-shaped chuck table 32 disposed on the support base 31.
支持基台31は、主部21上の矢印A1で示す前後方向(直立壁22の前面に垂直な方向)に延在する平行移動手段としてのテーブル水平移動機構211によって、チャックテーブル32を水平移動自在に支持する。これによって、チャックテーブル32は、図2中に一点鎖線で示すテーブル水平移動機構211上のワーク搬入出域E1と、図2中に二点鎖線で示すように研磨加工ユニット40下方の研磨工具43と対向するテーブル水平移動機構211上の位置であるワーク研磨加工域E2との間で移動される。なお、ここでは、テーブル水平移動機構211によってチャックテーブル32を水平移動させる構成としたが、研磨工具43の研磨面とチャックテーブル32(詳細には、後述する吸引保持部321によって形成される保持面)とが互いに並行な面内で相対的に移動される構成であれば別の構成でもよい。例えば、チャックテーブル32を移動させずに研磨工具43側を水平移動させる構成としてもよいし、チャックテーブル32および研磨工具43の双方を水平面内で逆方向に移動させて研磨工具43の研磨面とチャックテーブル32の保持面とを相対移動させることとしてもよい。   The support base 31 moves the chuck table 32 horizontally by a table horizontal movement mechanism 211 as parallel movement means extending in the front-rear direction (direction perpendicular to the front surface of the upright wall 22) indicated by the arrow A1 on the main portion 21. Support freely. As a result, the chuck table 32 includes a work loading / unloading area E1 on the table horizontal movement mechanism 211 indicated by a one-dot chain line in FIG. 2 and a polishing tool 43 below the polishing unit 40 as indicated by a two-dot chain line in FIG. And the workpiece polishing processing area E2 which is a position on the table horizontal movement mechanism 211 facing each other. Here, the chuck table 32 is horizontally moved by the table horizontal movement mechanism 211, but the polishing surface of the polishing tool 43 and the chuck table 32 (specifically, a holding surface formed by a suction holding portion 321 described later). May be different from each other as long as they are relatively moved in a plane parallel to each other. For example, the polishing tool 43 side may be moved horizontally without moving the chuck table 32, or both the chuck table 32 and the polishing tool 43 may be moved in the opposite directions in the horizontal plane to change the polishing surface of the polishing tool 43. The chuck table 32 may be moved relative to the holding surface.
さらに、支持基台31は、不図示のテーブル回転機構により、支持基台31に対して実質上鉛直に延びる回転中心軸線を中心としてチャックテーブル32を回転自在に支持する。   Further, the support base 31 rotatably supports the chuck table 32 about a rotation center axis extending substantially vertically with respect to the support base 31 by a table rotation mechanism (not shown).
チャックテーブル32は、図4に示すように、上面が保持面を形成する吸引保持部321を備え、ワーク1は、被研磨面(裏面)を上にして被研磨面が露出するように吸引保持部321上に載置される。吸引保持部321は、例えば多孔質セラミッックス等の多孔性材料から構成されており、不図示の吸引機構によって上面に載置されたワーク1(詳細には被保持面であるワーク1の表面)を吸引保持する。   As shown in FIG. 4, the chuck table 32 includes a suction holding portion 321 whose upper surface forms a holding surface, and the workpiece 1 is sucked and held so that the surface to be polished is exposed with the surface to be polished (back surface) facing up. Placed on the part 321. The suction holding unit 321 is made of, for example, a porous material such as porous ceramics, and the workpiece 1 placed on the upper surface by a suction mechanism (not shown) (specifically, the surface of the workpiece 1 that is a held surface). Hold by suction.
図2に戻り、装置ハウジング20の直立壁22の前面には、鉛直方向(上下方向)に延びる一対の案内レール221,221が設けられており、研磨手段としての研磨加工ユニット40が昇降移動自在に装着されている。   Returning to FIG. 2, a pair of guide rails 221 and 221 extending in the vertical direction (vertical direction) are provided on the front surface of the upright wall 22 of the apparatus housing 20, and the polishing unit 40 as the polishing means can be moved up and down. It is attached to.
研磨加工ユニット40は、移動基台41とこの移動基台41に装着されたスピンドルユニット42とを具備している。移動基台41の後面には、鉛直方向に沿うように一対の係合部(不図示)が設けられており、この一対の係合部が直立壁22の一対の案内レール221,221と摺動自在に係合して研磨加工ユニット40の昇降移動を可能にしている。この研磨加工ユニット40の昇降移動は、直交移動手段としての加工ユニット送り機構50によって実現される。   The polishing unit 40 includes a moving base 41 and a spindle unit 42 attached to the moving base 41. A rear surface of the movable base 41 is provided with a pair of engaging portions (not shown) along the vertical direction, and the pair of engaging portions slides with the pair of guide rails 221 and 221 of the upright wall 22. The polishing unit 40 can be moved up and down by engaging freely. The up-and-down movement of the polishing processing unit 40 is realized by a processing unit feed mechanism 50 as an orthogonal moving means.
加工ユニット送り機構50は、直立壁22の前側に配設され実質上鉛直に延びる雄ねじロッド51を具備しており、この雄ねじロッド51は、その上端部および下端部が直立壁22に取り付けられた軸受部材52,53によって回転自在に支持されている。上側の軸受部材52には雄ねじロッド51を回転駆動するための駆動源としてのパルスモータ54が配設されており、このパルスモータ54の出力軸が雄ねじロッド51に伝動連結されている。そして、移動基台41の後面には、その幅方向中央部から後方に延びる貫通雌ねじ孔(不図示)が形成されており、この貫通雌ねじ孔に雄ねじロッド51が螺合している。したがって、パルスモータ54が正転すると、案内レール221,221に沿って移動基台41すなわち研磨加工ユニット40が下降(前進)し、パルスモータ54が逆転すると、案内レール221,221に沿って移動基台41すなわち研磨加工ユニット40が上昇(後退)する。なお、ここでは、加工ユニット送り機構50によって研磨加工ユニット40を鉛直方向に昇降移動させる構成としたが、加工ユニット送り機構50(詳細には、この加工ユニット送り機構50において下端部に装着される研磨工具43の研磨面)とチャックテーブル32の保持面とがこのチャックテーブル32の保持面の直交方向に相対的に移動される構成であれば別の構成でもよい。例えば、加工ユニット送り機構50を移動させずにチャックテーブル32側を昇降移動させる構成としてもよいし、加工ユニット送り機構50およびチャックテーブル32の双方を鉛直方向に沿って逆方向に昇降移動させて研磨工具43の研磨面とチャックテーブル32の保持面とを相対移動させることとしてもよい。   The processing unit feed mechanism 50 includes a male screw rod 51 disposed on the front side of the upright wall 22 and extending substantially vertically. The male screw rod 51 has an upper end portion and a lower end portion attached to the upright wall 22. The bearing members 52 and 53 are rotatably supported. The upper bearing member 52 is provided with a pulse motor 54 as a drive source for rotationally driving the male screw rod 51, and an output shaft of the pulse motor 54 is transmission-coupled to the male screw rod 51. A rear female screw hole (not shown) extending rearward from the center in the width direction is formed on the rear surface of the movable base 41, and a male screw rod 51 is screwed into the through female screw hole. Accordingly, when the pulse motor 54 rotates in the forward direction, the moving base 41, that is, the polishing unit 40 moves down (advances) along the guide rails 221 and 221, and when the pulse motor 54 rotates in the reverse direction, it moves along the guide rails 221 and 221. The base 41, that is, the polishing unit 40 is raised (retracted). Here, the polishing unit 40 is moved up and down in the vertical direction by the processing unit feed mechanism 50, but the processing unit feed mechanism 50 (specifically, the processing unit feed mechanism 50 is attached to the lower end portion). Another configuration may be used as long as the polishing surface of the polishing tool 43) and the holding surface of the chuck table 32 are relatively moved in the direction perpendicular to the holding surface of the chuck table 32. For example, the chuck table 32 may be moved up and down without moving the machining unit feed mechanism 50, or both the machining unit feed mechanism 50 and the chuck table 32 may be moved up and down in the reverse direction along the vertical direction. The polishing surface of the polishing tool 43 and the holding surface of the chuck table 32 may be relatively moved.
一方、移動基台41の前面には、前方に突出した支持部413が設けられ、この支持部413にスピンドルユニット42が取り付けられている。スピンドルユニット42は、支持部413に装着されたスピンドルハウジング421と、このスピンドルハウジング421に回転自在に配設されたスピンドルとしての回転スピンドル422と、この回転スピンドル422を回転駆動するための駆動源としてのサーボモータ423とを具備している。回転スピンドル422の下端部はスピンドルハウジング421の下端を越えて下方に突出しており、その下端において平面視円板形状の工具装着部材424が設けられている。この工具装着部材424の下面に、研磨工具43がその研磨面側を下に向けて装着される。この構成により、サーボモータ423の回転によって研磨工具43の研磨面が水平面内で回転する。   On the other hand, a support portion 413 protruding forward is provided on the front surface of the movable base 41, and the spindle unit 42 is attached to the support portion 413. The spindle unit 42 includes a spindle housing 421 mounted on the support portion 413, a rotating spindle 422 as a spindle rotatably disposed on the spindle housing 421, and a drive source for rotationally driving the rotating spindle 422. Servo motor 423. The lower end portion of the rotary spindle 422 protrudes downward beyond the lower end of the spindle housing 421, and a tool mounting member 424 having a disk shape in plan view is provided at the lower end. The polishing tool 43 is mounted on the lower surface of the tool mounting member 424 with the polishing surface side facing down. With this configuration, the polishing surface of the polishing tool 43 is rotated in a horizontal plane by the rotation of the servo motor 423.
研磨工具43は、円板形状のホイール基台431と、このホイール基台431に例えば接着剤等で貼り付けられて研磨面を形成する研磨パッド44とから構成されている。研磨パッド44は、図5に示すように、円板形状の第1の研磨パッド45と、この第1の研磨パッド45の外周部に配設されたリング形状の第2の研磨パッド46とを備え、研磨パッド44は、内側において露出した第1の研磨パッド45の表面(図5中の上面)を中央研磨面とし、外側の第2の研磨パッド46の表面(図5中の上面)を外周研磨面とした研磨工具43の研磨面を形成している。そして、図4に示すように、第1の研磨パッド45によって形成される中央研磨面と第2の研磨パッド46によって形成される外周研磨面とが段差を形成して外周研磨面が中央研磨面から突出しており、研磨工具43は、全体として内側が窪んだ断面視凹型形状を有する。   The polishing tool 43 includes a disk-shaped wheel base 431 and a polishing pad 44 that is attached to the wheel base 431 with, for example, an adhesive to form a polishing surface. As shown in FIG. 5, the polishing pad 44 includes a disk-shaped first polishing pad 45 and a ring-shaped second polishing pad 46 disposed on the outer periphery of the first polishing pad 45. The polishing pad 44 includes the surface of the first polishing pad 45 exposed on the inner side (upper surface in FIG. 5) as a central polishing surface and the surface of the second polishing pad 46 on the outer side (upper surface in FIG. 5). A polishing surface of the polishing tool 43 is formed as an outer peripheral polishing surface. As shown in FIG. 4, the central polishing surface formed by the first polishing pad 45 and the outer peripheral polishing surface formed by the second polishing pad 46 form a step so that the outer peripheral polishing surface is the central polishing surface. The polishing tool 43 has a concave shape in cross-sectional view with the inside recessed.
第1の研磨パッド45は、例えば粗研磨用であり、ポリウレタン発泡体等が用いられる。この第1の研磨パッド45の表面中央には、後述するように研磨加工ユニット40の上端部と連結されるスラリー供給路61を介し、スラリー供給源60と連通するスラリー供給口451が形成されている。そして、第1の研磨パッド45の表面には、その全域に広がるようにスラリー供給口451と連通する溝452が格子状に形成されている。この構成によって、スラリー供給源60から供給された遊離砥粒を含む研磨液(スラリー)がスラリー供給口451に導かれ、溝452に沿って中央研磨面の全域に供給される。一方、第2の研磨パッド46は、例えば仕上げ研磨用であり、スウェード等の研磨布が用いられる。なお、第1の研磨パッド45および第2の研磨パッド46の材質は一例であって、適宜選択できる。   The first polishing pad 45 is for rough polishing, for example, and a polyurethane foam or the like is used. A slurry supply port 451 communicating with the slurry supply source 60 is formed at the center of the surface of the first polishing pad 45 through a slurry supply path 61 connected to the upper end of the polishing unit 40 as will be described later. Yes. Grooves 452 communicating with the slurry supply ports 451 are formed in a lattice pattern on the surface of the first polishing pad 45 so as to spread over the entire area. With this configuration, a polishing liquid (slurry) containing free abrasive grains supplied from the slurry supply source 60 is guided to the slurry supply port 451 and supplied along the groove 452 to the entire area of the central polishing surface. On the other hand, the second polishing pad 46 is, for example, for finish polishing, and a polishing cloth such as suede is used. The material of the first polishing pad 45 and the second polishing pad 46 is an example and can be selected as appropriate.
このように構成される研磨工具43は、第1の研磨パッド45によって形成される中央研磨面が研磨対象とするワーク1の直径以上となる大きさを有している。そして、研磨工具43は、図4に示すように、中央研磨面と外周研磨面とで構成される研磨面側がワーク研磨加工域E2に位置したチャックテーブル32上のワーク1の被研磨面(裏面)と対向するように工具装着部材424に装着される。なお、本構成の研磨工具43は、第1の研磨パッド45から第2の研磨パッド46のみを取り外すことが可能である。したがって、第1の研磨パッド45に対して第2の研磨パッド46の磨耗が激しい場合には、この第2の研磨パッド46のみを取り外して交換が可能である。   The polishing tool 43 configured as described above has a size such that the central polishing surface formed by the first polishing pad 45 is not less than the diameter of the workpiece 1 to be polished. Then, as shown in FIG. 4, the polishing tool 43 has a polished surface (back surface) of the workpiece 1 on the chuck table 32 in which the polishing surface side constituted by the central polishing surface and the outer peripheral polishing surface is positioned in the workpiece polishing processing area E2. ) Is mounted on the tool mounting member 424 so as to oppose. Note that the polishing tool 43 having this configuration can remove only the second polishing pad 46 from the first polishing pad 45. Therefore, when the second polishing pad 46 is heavily worn with respect to the first polishing pad 45, only the second polishing pad 46 can be removed and replaced.
図2に戻り、研磨装置10は、装置内の適所に配設されたスラリー供給源60を備え、スラリー供給路61を介して研磨加工ユニット40の上端部と連結されている。このスラリー供給源60は、スラリーを貯留する。スラリーは、例えば水酸化カリウム(KOH)や水酸化ナトリウム(NaOH)、アンモニア(NH3OH)等のアルカリ薬液水溶液に、酸化ケイ素(SiO2)や酸化セリウム(CeO2)、アルミナ(Al23)等の砥粒を研磨剤として懸濁させたものである。 Returning to FIG. 2, the polishing apparatus 10 includes a slurry supply source 60 disposed at an appropriate position in the apparatus, and is connected to the upper end portion of the polishing unit 40 via a slurry supply path 61. The slurry supply source 60 stores slurry. For example, the slurry may be an alkaline chemical solution such as potassium hydroxide (KOH), sodium hydroxide (NaOH), ammonia (NH 3 OH), silicon oxide (SiO 2 ), cerium oxide (CeO 2 ), alumina (Al 2 O). 3 ) Abrasive grains such as those suspended as an abrasive.
また、装置ハウジング20の主部21上において、テーブル水平移動機構211のワーク研磨加工域E2の近傍位置に薬液供給機構70と研磨面洗浄手段としての外周研磨面洗浄機構81とが隣接配置されている。   Further, on the main portion 21 of the apparatus housing 20, a chemical solution supply mechanism 70 and an outer peripheral polishing surface cleaning mechanism 81 as a polishing surface cleaning means are disposed adjacent to each other in the vicinity of the workpiece polishing processing area E 2 of the table horizontal movement mechanism 211. Yes.
薬液供給機構70は、図3に示すように、薬液供給ノズル71の他、薬液供給源や薬液供給源からの薬液を薬液供給ノズル71に導くパイプ等を含む。薬液としては、例えば水酸化カリウム(KOH)や水酸化ナトリウム(NaOH)、アンモニア(NH3OH)等のアルカリ薬液水溶液、界面活性剤等が用いられる。この薬液供給機構70は、図4に示すように、薬液供給ノズル71からの薬液を後述する仕上げ研磨位置に位置した研磨工具43の外周研磨面に向けて供給可能な構成となっている。 As shown in FIG. 3, the chemical liquid supply mechanism 70 includes a chemical liquid supply nozzle 71, a pipe that guides the chemical liquid from the chemical liquid supply source and the chemical liquid supply source to the chemical liquid supply nozzle 71, and the like. As the chemical solution, for example, an alkaline chemical solution aqueous solution such as potassium hydroxide (KOH), sodium hydroxide (NaOH), ammonia (NH 3 OH), a surfactant, or the like is used. As shown in FIG. 4, the chemical solution supply mechanism 70 is configured to be able to supply the chemical solution from the chemical solution supply nozzle 71 toward the outer peripheral polishing surface of the polishing tool 43 located at a finish polishing position described later.
外周研磨面洗浄機構81は、図3に示すように、外周研磨面洗浄ノズル811の他、洗浄液供給源やエアー供給源、洗浄液供給源からの洗浄液およびエアー供給源からのエアーを各々外周研磨面洗浄ノズル811に導くパイプ等を含む。外周研磨面洗浄ノズル811は、例えば液体と気体とを混合し気液混合ミストとして噴射する二流体洗浄ノズルで構成され、純水等の洗浄液をミスト状にして噴射する。なお、この外周研磨面洗浄機構81は、薬液供給機構70と同様の要領で、外周研磨面洗浄ノズル811からの洗浄液を後述する研磨面洗浄位置に位置した研磨工具43の外周研磨面に向けて供給可能な構成となっている。   As shown in FIG. 3, the outer peripheral polishing surface cleaning mechanism 81 supplies the cleaning liquid supply source, the air supply source, the cleaning liquid from the cleaning liquid supply source, and the air from the air supply source in addition to the outer peripheral polishing surface cleaning nozzle 811, respectively. A pipe leading to the cleaning nozzle 811 is included. The outer peripheral polished surface cleaning nozzle 811 is constituted by, for example, a two-fluid cleaning nozzle that mixes a liquid and a gas and injects it as a gas-liquid mixed mist, and injects a cleaning liquid such as pure water in the form of a mist. The outer peripheral polishing surface cleaning mechanism 81 is directed in the same manner as the chemical solution supply mechanism 70 toward the outer peripheral polishing surface of the polishing tool 43 positioned at the polishing surface cleaning position described later with the cleaning liquid from the outer peripheral polishing surface cleaning nozzle 811. It can be supplied.
さらに、主部21上には、図2に示すように、テーブル水平移動機構211を挟んで薬液供給機構70および外周研磨面洗浄機構81の反対側に、中央研磨面洗浄機構82と被研磨面洗浄手段としての被研磨面洗浄機構83とが隣接配置されている。   Further, on the main portion 21, as shown in FIG. 2, a central polishing surface cleaning mechanism 82 and a surface to be polished are disposed on the opposite side of the chemical solution supply mechanism 70 and the outer peripheral polishing surface cleaning mechanism 81 with the table horizontal movement mechanism 211 interposed therebetween. A polished surface cleaning mechanism 83 as a cleaning means is adjacently disposed.
中央研磨面洗浄機構82は、図3に示すように、鉛直方向への昇降および自身の基端部を通過する鉛直線を中心軸とする回転を自在に行う支軸821と、この支軸821の上端に一端が連結された洗浄アーム822と、この洗浄アーム822の他端側に噴射口が上を向くようにして設けられた例えば二流体洗浄ノズルで構成される中央研磨面洗浄ノズル823とを備え、この他に、洗浄液供給源やエアー供給源、洗浄液供給源からの洗浄液およびエアー供給源からのエアーを各々中央研磨面洗浄ノズル823に導くパイプ等を含む。この中央研磨面洗浄機構82は、中央研磨面の洗浄時において支軸821の回転によって洗浄アーム822が回動し、研磨面洗浄位置に位置した研磨工具43の中央研磨面の下方に中央研磨面洗浄ノズル823が移動するようになっており、これによって、中央研磨面洗浄ノズル823からの洗浄液を研磨面洗浄位置の研磨工具43の中央研磨面に向けて供給可能な構成となっている。なお、洗浄アーム822は、中央研磨面の洗浄時を除いてチャックテーブル32の水平移動および研磨加工ユニット40の昇降移動と干渉しない位置に位置付けられる。   As shown in FIG. 3, the central polishing surface cleaning mechanism 82 includes a support shaft 821 that freely moves up and down in the vertical direction and rotates around a vertical line passing through its base end as a center axis, and the support shaft 821. A cleaning arm 822 having one end connected to the upper end of the cleaning arm, and a central polishing surface cleaning nozzle 823 constituted by, for example, a two-fluid cleaning nozzle provided on the other end side of the cleaning arm 822 with an injection port facing upward. In addition, a cleaning liquid supply source, an air supply source, a cleaning liquid from the cleaning liquid supply source, and a pipe that guides air from the air supply source to the central polishing surface cleaning nozzle 823, respectively. In the central polishing surface cleaning mechanism 82, the cleaning arm 822 is rotated by the rotation of the support shaft 821 during the cleaning of the central polishing surface, and the central polishing surface is below the central polishing surface of the polishing tool 43 located at the polishing surface cleaning position. The cleaning nozzle 823 moves so that the cleaning liquid from the central polishing surface cleaning nozzle 823 can be supplied toward the central polishing surface of the polishing tool 43 at the polishing surface cleaning position. The cleaning arm 822 is positioned at a position where it does not interfere with the horizontal movement of the chuck table 32 and the vertical movement of the polishing unit 40 except when the central polishing surface is cleaned.
また、被研磨面洗浄機構83も同様に、鉛直方向への昇降および自身の基端部を通過する鉛直線を中心軸とする回転を自在に行う支軸831と、この支軸831の上端に一端が連結された洗浄アーム832と、この洗浄アーム832の他端側に噴射口が下を向くようにして設けられた例えば二流体洗浄ノズルで構成される被研磨面洗浄ノズル833とを備え、この他に、洗浄液供給源やエアー供給源、洗浄液供給源からの洗浄液およびエアー供給源からのエアーを各々被研磨面洗浄ノズル833に導くパイプ等を含む。この被研磨面洗浄機構83は、被研磨面の洗浄時において支軸831の回転によって洗浄アーム832が回動し、ワーク搬入出域E1とワーク研磨加工域E2との間の後述する被研磨面洗浄位置に位置したチャックテーブル32の上方に被研磨面洗浄ノズル833が移動するようになっており、これによって、被研磨面洗浄ノズル833からの洗浄液を被研磨面洗浄位置のチャックテーブル32上に供給可能な構成となっている。なお、洗浄アーム832は、被研磨面の洗浄時を除いてチャックテーブル32の水平移動と干渉しない位置に位置付けられる。   Similarly, the polished surface cleaning mechanism 83 also has a support shaft 831 that can freely move up and down in the vertical direction and rotate about a vertical line passing through its base end portion as a center axis, and an upper end of the support shaft 831. A cleaning arm 832 having one end connected thereto, and a polished surface cleaning nozzle 833 configured by, for example, a two-fluid cleaning nozzle provided on the other end side of the cleaning arm 832 so that an injection port faces downward, In addition, a cleaning liquid supply source, an air supply source, a cleaning liquid from the cleaning liquid supply source, and a pipe that guides air from the air supply source to the polished surface cleaning nozzle 833, respectively. In the polished surface cleaning mechanism 83, the cleaning arm 832 is rotated by the rotation of the support shaft 831 during the cleaning of the polished surface, and the polished surface described later between the workpiece loading / unloading area E1 and the workpiece polishing processing area E2 is rotated. The polished surface cleaning nozzle 833 is moved above the chuck table 32 located at the cleaning position, whereby the cleaning liquid from the polished surface cleaning nozzle 833 is transferred onto the chuck table 32 at the polished surface cleaning position. It can be supplied. The cleaning arm 832 is positioned at a position where it does not interfere with the horizontal movement of the chuck table 32 except when the surface to be polished is cleaned.
また、研磨装置10は、図2に示すように、搬入手段91と、搬出手段92と、カセット101,102と、搬出入手段110と、位置決め手段120と、洗浄手段130と、制御手段140とを備えている。   As shown in FIG. 2, the polishing apparatus 10 includes a carry-in means 91, a carry-out means 92, cassettes 101 and 102, a carry-in / out means 110, a positioning means 120, a cleaning means 130, and a control means 140. It has.
搬入手段91は、鉛直方向への昇降および自身の基端部を通過する鉛直線を中心軸とする回転を自在に行う搬送アーム911を備え、この搬送アーム911に、ワーク1を吸着保持する吸着パッド912が取り付けられて構成されている。この搬入手段91は、位置決め手段120で位置決めされた研磨加工前のワーク1の被研磨面を吸着保持してワーク搬入出域E1に位置するチャックテーブル32上に搬入する。一方、搬出手段92は、鉛直方向への昇降および自身の基端部を通過する鉛直線を中心軸とする回転を自在に行う搬送アーム921を備え、この搬送アーム921に、ワーク1を吸着保持する吸着パッド922が取り付けられて構成されている。この搬出手段92は、搬入搬出位置に位置するチャックテーブル32上の研磨加工後のワーク1を吸着保持し、洗浄手段130に搬出する。   The carrying-in means 91 includes a transfer arm 911 that freely moves up and down in the vertical direction and rotates around a vertical line passing through its base end as a central axis, and holds the work 1 on the transfer arm 911 by suction. A pad 912 is attached and configured. The carry-in means 91 sucks and holds the surface to be polished of the workpiece 1 before the polishing process positioned by the positioning means 120 and carries it onto the chuck table 32 located in the work carry-in / out area E1. On the other hand, the carry-out means 92 includes a transfer arm 921 that freely moves up and down in the vertical direction and rotates around the vertical line passing through its base end as a central axis, and holds the workpiece 1 on the transfer arm 921 by suction. A suction pad 922 is attached and configured. The unloading means 92 sucks and holds the polished workpiece 1 on the chuck table 32 located at the loading / unloading position, and unloads it to the cleaning means 130.
カセット101,102は、複数のスロットを有するワーク1用の収容器である。一方のカセット101は、研磨加工前のワーク1を収容し、他方のカセット102は、研磨加工後のワーク1を収容する。   The cassettes 101 and 102 are containers for the work 1 having a plurality of slots. One cassette 101 accommodates the workpiece 1 before polishing, and the other cassette 102 accommodates the workpiece 1 after polishing.
搬出入手段110は、例えばU字型ハンドを備えるロボットアーム111を具備しており、このロボットアーム111によってワーク1の被研磨面を吸着保持して搬送する。具体的には、搬出入手段110は、研磨加工前のワーク1をカセット101から位置決め手段120へ搬出するとともに、研磨加工後のワーク1を洗浄手段130からカセット102へ搬入する。   The carry-in / out means 110 includes a robot arm 111 having, for example, a U-shaped hand. The robot arm 111 conveys the surface to be polished of the workpiece 1 by suction. Specifically, the carry-in / out means 110 carries the workpiece 1 before the polishing process from the cassette 101 to the positioning means 120 and carries the workpiece 1 after the polishing process into the cassette 102 from the cleaning means 130.
位置決め手段120は、カセット101から取り出されたワーク1を仮置きし、その中心位置の位置決めを行うためのテーブルである。洗浄手段130は、研磨加工後(詳細には仕上げ研磨後)のワーク1を洗浄し、ワーク1の表面に付着している研磨屑等のコンタミネーションを除去する。   The positioning means 120 is a table for temporarily placing the work 1 taken out from the cassette 101 and positioning the center position thereof. The cleaning means 130 cleans the workpiece 1 after polishing (specifically after finish polishing), and removes contamination such as polishing debris adhering to the surface of the workpiece 1.
制御手段140は、研磨装置10の動作に必要な各種データを保持するメモリを内蔵したマイクロコンピュータ等で構成され、研磨装置10を構成する各部の動作を制御して研磨装置10を統括的に制御する。具体的には、研磨装置10は、本実施の形態の研磨加工方法を実現するため、チャックテーブル32上で裏面である被研磨面を上にしてワーク1を吸引保持するワーク保持工程と、このようにチャックテーブル32上に保持されたワーク1の被研磨面の粗研磨を第1の研磨工程として行う粗研磨工程と、この粗研磨工程の後、ワーク1の被研磨面の仕上げ研磨を第2の研磨工程として行う仕上げ研磨工程とを制御する。また、本実施の形態では、制御手段140は、粗研磨工程と仕上げ研磨工程との間に洗浄工程を制御するようになっている。具体的には、制御手段140は、洗浄工程として、研磨工具43の研磨面を洗浄する研磨面洗浄工程およびワーク1の被研磨面を洗浄する被研磨面洗浄工程を制御する。   The control means 140 is composed of a microcomputer or the like with a built-in memory for holding various data necessary for the operation of the polishing apparatus 10, and controls the polishing apparatus 10 by controlling the operation of each part constituting the polishing apparatus 10. To do. Specifically, in order to realize the polishing method of the present embodiment, the polishing apparatus 10 includes a workpiece holding step for sucking and holding the workpiece 1 with the surface to be polished on the chuck table 32 facing upward, Thus, a rough polishing step in which rough polishing of the surface to be polished of the workpiece 1 held on the chuck table 32 is performed as a first polishing step, and after this rough polishing step, final polishing of the surface to be polished of the workpiece 1 is performed. The final polishing step performed as the second polishing step is controlled. In the present embodiment, the control unit 140 controls the cleaning process between the rough polishing process and the final polishing process. Specifically, the control means 140 controls a polishing surface cleaning process for cleaning the polishing surface of the polishing tool 43 and a polishing surface cleaning process for cleaning the polishing surface of the workpiece 1 as the cleaning process.
つぎに、研磨装置10が行うワーク保持工程、粗研磨工程、研磨面洗浄工程、被研磨面洗浄工程および仕上げ研磨工程について説明する。図6は、粗研磨工程を説明する説明図であり、図7は、研磨面洗浄工程を説明する説明図であり、図8は、被研磨面洗浄工程を説明する説明図であり、図9は、仕上げ研磨工程を説明する説明図である。なお、図6および図9では、下段において研磨工具43およびチャックテーブル32の側面を示し、上段において下段に示す研磨パッド44とチャックテーブル32上のワーク1との位置関係を示している。   Next, a work holding process, a rough polishing process, a polished surface cleaning process, a polished surface cleaning process, and a final polishing process performed by the polishing apparatus 10 will be described. 6 is an explanatory view for explaining the rough polishing step, FIG. 7 is an explanatory view for explaining the polishing surface cleaning step, and FIG. 8 is an explanatory view for explaining the polishing surface cleaning step. These are explanatory drawings explaining the finish polishing process. 6 and 9, the side surfaces of the polishing tool 43 and the chuck table 32 are shown in the lower stage, and the positional relationship between the polishing pad 44 shown in the lower stage and the workpiece 1 on the chuck table 32 is shown in the upper stage.
まず、研磨装置10は、ワーク保持工程を行う。ここで、ワーク保持工程に先立ち、チャックテーブル32がワーク搬入出域E1に移動し、搬入手段91が、チャックテーブル32上に被研磨面を上にしてワーク1を搬入する。そして、ワーク保持工程では、制御手段140がチャックテーブル機構30の吸引機構(不図示)を駆動し、チャックテーブル32上にワーク2の被保持面を吸引保持させる。   First, the polishing apparatus 10 performs a work holding process. Here, prior to the workpiece holding step, the chuck table 32 moves to the workpiece loading / unloading area E1, and the loading means 91 loads the workpiece 1 onto the chuck table 32 with the surface to be polished facing up. In the workpiece holding step, the control unit 140 drives a suction mechanism (not shown) of the chuck table mechanism 30 to suck and hold the held surface of the workpiece 2 on the chuck table 32.
このワーク保持工程の後、制御手段140は、テーブル水平移動機構211を駆動してチャックテーブル32をワーク搬入出域E1からワーク研磨加工域E2へと水平移動させる。詳細には、図6に示すように、チャックテーブル32上のワーク1の被研磨面全域が研磨工具43の中央研磨面とオーバーラップする位置までチャックテーブル32を移動させる。   After this work holding step, the control means 140 drives the table horizontal movement mechanism 211 to horizontally move the chuck table 32 from the work carry-in / out area E1 to the work polishing area E2. Specifically, as shown in FIG. 6, the chuck table 32 is moved to a position where the entire polished surface of the workpiece 1 on the chuck table 32 overlaps the central polishing surface of the polishing tool 43.
つぎに、研磨装置10は、粗研磨工程を行う。具体的には、制御手段140は、サーボモータ423を駆動し、回転スピンドル422を回転駆動させて研磨工具43の研磨面を水平面内で回転させるとともに、加工ユニット送り機構50のパルスモータ54を駆動し、研磨加工ユニット40を下降移動させる。この研磨加工ユニット40の下降移動によって研磨工具43(詳細には第1の研磨パッド45によって形成される中央研磨面)が予めワーク1の厚み等をもとに設定される粗研磨位置に移動し、この粗研磨位置において、ワーク1の被研磨面の全域が中央研磨面を形成する第1の研磨パッド45と接触する。また、制御手段140は、これらの制御と並行して不図示のテーブル回転機構を駆動し、チャックテーブル32を回転駆動させてワーク1の被研磨面を水平面内で回転させる。さらに、制御手段140は、スラリー供給源60を駆動し、スラリー供給口451から格子状の溝452を介して中央研磨面とワーク1の被研磨面との間にスラリーを供給する。   Next, the polishing apparatus 10 performs a rough polishing process. Specifically, the control unit 140 drives the servo motor 423, rotates the rotary spindle 422 to rotate the polishing surface of the polishing tool 43 in a horizontal plane, and drives the pulse motor 54 of the processing unit feed mechanism 50. Then, the polishing unit 40 is moved downward. As the polishing unit 40 moves downward, the polishing tool 43 (specifically, the central polishing surface formed by the first polishing pad 45) moves to a rough polishing position set in advance based on the thickness of the workpiece 1 and the like. In this rough polishing position, the entire surface to be polished of the workpiece 1 comes into contact with the first polishing pad 45 forming the central polishing surface. Further, the control means 140 drives a table rotation mechanism (not shown) in parallel with these controls, and rotates the chuck table 32 to rotate the surface to be polished of the workpiece 1 in a horizontal plane. Further, the control unit 140 drives the slurry supply source 60 to supply the slurry from the slurry supply port 451 between the central polishing surface and the surface to be polished of the workpiece 1 through the lattice-like grooves 452.
この研磨工程では、以上のように各部が動作することで、中央研磨面とワーク1の被研磨面とを相対的に回転させながらワーク1の被研磨面全域に中央研磨面を押し付け、スラリー供給源60から中央研磨面全域に供給されるスラリーによってワーク1の被研磨面全域をCMP(Chemical Mechanical Polishing:化学的機械的研磨)加工して粗研磨する。   In this polishing step, each part operates as described above, and the central polishing surface is pressed over the entire surface to be polished of the workpiece 1 while the central polishing surface and the surface to be polished of the workpiece 1 are relatively rotated to supply slurry. The entire surface to be polished of the workpiece 1 is subjected to rough polishing by CMP (Chemical Mechanical Polishing) processing using slurry supplied from the source 60 to the entire central polishing surface.
以上の粗研磨工程を終えたならば、研磨装置10は、洗浄工程として、研磨面洗浄工程および被研磨面洗浄工程を行う。まず、制御手段140は、加工ユニット送り機構50のパルスモータ54を駆動し、研磨加工ユニット40を上昇移動させる。そして、この研磨加工ユニット40の上昇移動によって、研磨工具43の研磨面を予め設定される研磨面洗浄位置に移動させる。   When the above rough polishing process is completed, the polishing apparatus 10 performs a polishing surface cleaning process and a polished surface cleaning process as the cleaning process. First, the control unit 140 drives the pulse motor 54 of the processing unit feeding mechanism 50 to move the polishing processing unit 40 upward. The polishing surface of the polishing tool 43 is moved to a preset polishing surface cleaning position by the upward movement of the polishing processing unit 40.
その後、研磨面洗浄工程として、制御手段140は、回転スピンドル422の回転によって研磨工具43の研磨面を水平面内で回転させた状態で、外周研磨面洗浄機構81および中央研磨面洗浄機構82を駆動する。そして、制御手段140は、図7に示すように、外周研磨面洗浄ノズル811から外周研磨面に向けて洗浄液を噴射するとともに、支軸821を回転させることによって洗浄アーム822を回動させながら中央研磨面洗浄ノズル823から中央研磨面に向けて洗浄液を噴射する。   Thereafter, as a polishing surface cleaning step, the control unit 140 drives the outer peripheral polishing surface cleaning mechanism 81 and the central polishing surface cleaning mechanism 82 in a state where the polishing surface of the polishing tool 43 is rotated in a horizontal plane by the rotation of the rotary spindle 422. To do. Then, as shown in FIG. 7, the control means 140 ejects the cleaning liquid from the outer peripheral polishing surface cleaning nozzle 811 toward the outer peripheral polishing surface, and rotates the cleaning arm 822 by rotating the support shaft 821 while rotating the cleaning arm 822. A cleaning liquid is sprayed from the polishing surface cleaning nozzle 823 toward the central polishing surface.
この研磨面洗浄工程では、以上のように各部が動作することで、研磨面洗浄位置に位置して回転する研磨工具43の研磨面に対し、外周研磨面(第2の研磨パッド46の表面)および中央研磨面(第1の研磨パッド45の表面)の各々に洗浄液を供給する。これによって、中央研磨面に付着したスラリーや研磨屑、あるいは粗研磨時の飛散等によって外周研磨面に付着したスラリー等のコンタミネーションが除去される。   In this polishing surface cleaning process, the outer peripheral polishing surface (the surface of the second polishing pad 46) with respect to the polishing surface of the polishing tool 43 rotating at the polishing surface cleaning position by operating each part as described above. The cleaning liquid is supplied to each of the central polishing surface (the surface of the first polishing pad 45). As a result, contamination such as slurry and polishing dust adhering to the central polishing surface or slurry adhering to the outer peripheral polishing surface due to scattering during rough polishing or the like is removed.
また、被研磨面洗浄工程として、制御手段140は、テーブル水平移動機構211を駆動し、チャックテーブル32をワーク研磨加工域E2からワーク搬入出域E1側へと水平移動させ、ワーク搬入出域E1とワーク研磨加工域E2との間の位置として予め設定される被研磨面洗浄位置にチャックテーブル32を移動させる。ここで、被研磨面洗浄位置は、チャックテーブル32上のワーク1の被研磨面の全域が研磨工具43の研磨面の全域とオーバーラップしない位置として設定される。そして、制御手段140は、これと並行して不図示のテーブル回転機構を駆動し、チャックテーブル32を回転駆動させてワーク1の被研磨面を水平面内で回転させるとともに、被研磨面洗浄機構83を駆動し、図8に示すように、支軸831を回転させることによって洗浄アーム832を回動させながらワーク1の被研磨面洗浄ノズル833から被研磨面に洗浄液を噴射する。   Further, as the surface to be polished cleaning step, the control means 140 drives the table horizontal movement mechanism 211 to move the chuck table 32 horizontally from the workpiece polishing processing area E2 to the workpiece loading / unloading area E1 side, thereby moving the workpiece loading / unloading area E1. The chuck table 32 is moved to a polishing surface cleaning position that is preset as a position between the workpiece polishing area E2 and the workpiece polishing area E2. Here, the polishing surface cleaning position is set as a position where the entire surface of the workpiece 1 on the chuck table 32 does not overlap the entire polishing surface of the polishing tool 43. In parallel with this, the control means 140 drives a table rotation mechanism (not shown), rotates the chuck table 32 to rotate the surface to be polished of the workpiece 1 in the horizontal plane, and also cleans the surface to be polished cleaning mechanism 83. As shown in FIG. 8, the cleaning liquid is sprayed from the polishing surface cleaning nozzle 833 of the workpiece 1 onto the surface to be polished while rotating the cleaning arm 832 by rotating the support shaft 831.
この被研磨面洗浄工程では、以上のように各部が動作することで、ワーク研磨加工域E2から被研磨面洗浄位置へと移動してくるチャックテーブル32上のワーク1の被研磨面に向けて洗浄液を供給する。これによって、ワーク1の被研磨面に付着したスラリーや研磨屑等のコンタミネーションが除去される。   In this polishing surface cleaning process, each part operates as described above, so that it moves toward the polishing surface of the workpiece 1 on the chuck table 32 moving from the workpiece polishing area E2 to the polishing surface cleaning position. Supply cleaning solution. Thereby, contamination such as slurry and polishing debris adhering to the surface to be polished of the workpiece 1 is removed.
以上の洗浄工程の後、制御手段140は、テーブル水平移動機構211を駆動してチャックテーブル32を被研磨面洗浄位置からワーク研磨加工域E2へと水平移動させる。詳細には、図9に示すように、研磨工具43の外周研磨面の鉛直下方にワーク1の被研磨面の中心Woが位置するようにチャックテーブル32を移動させる。   After the above cleaning process, the control means 140 drives the table horizontal movement mechanism 211 to move the chuck table 32 horizontally from the polishing surface cleaning position to the workpiece polishing area E2. Specifically, as shown in FIG. 9, the chuck table 32 is moved so that the center Wo of the surface to be polished of the workpiece 1 is positioned vertically below the outer peripheral polishing surface of the polishing tool 43.
つぎに、研磨装置10は、仕上げ研磨工程を行う。具体的には、制御手段140は、サーボモータ423を駆動して回転スピンドル422を回転駆動させて研磨工具43の研磨面を水平面内で回転させるとともに、加工ユニット送り機構50のパルスモータ54を駆動し、研磨加工ユニット40を下降移動させる。この研磨加工ユニット40の下降移動によって研磨工具43(詳細には第2の研磨パッド46によって形成される外周研磨面)が予めワーク1の厚み等をもとに設定される仕上げ研磨位置に移動し、この仕上げ研磨位置において、ワーク1の被研磨面の中心Woを含む領域が外周研磨面を形成する第2の研磨パッド46と接触する。また、制御手段140は、これらの制御と並行して不図示のテーブル回転機構を駆動し、チャックテーブル32を回転駆動させてワーク1の被研磨面を水平面内で回転させる。さらに、制御手段140は、薬液供給機構70を駆動し、図9に示すように、薬液供給ノズル71から外周研磨面に薬液を供給する。   Next, the polishing apparatus 10 performs a finish polishing process. Specifically, the control unit 140 drives the servo motor 423 to drive the rotary spindle 422 to rotate the polishing surface of the polishing tool 43 in a horizontal plane, and drives the pulse motor 54 of the machining unit feed mechanism 50. Then, the polishing unit 40 is moved downward. By the downward movement of the polishing unit 40, the polishing tool 43 (specifically, the outer peripheral polishing surface formed by the second polishing pad 46) moves to a final polishing position set in advance based on the thickness of the workpiece 1 and the like. In this final polishing position, the region including the center Wo of the surface to be polished of the workpiece 1 comes into contact with the second polishing pad 46 forming the outer peripheral polishing surface. Further, the control means 140 drives a table rotation mechanism (not shown) in parallel with these controls, and rotates the chuck table 32 to rotate the surface to be polished of the workpiece 1 in a horizontal plane. Furthermore, the control means 140 drives the chemical solution supply mechanism 70 to supply the chemical solution from the chemical solution supply nozzle 71 to the outer peripheral polished surface as shown in FIG.
この仕上げ研磨では、以上のように各部が動作することで、ワーク1の被研磨面に外周研磨面を部分的に押し付け、薬液供給ノズル71から外周研磨面に供給される薬液によってワーク1の被研磨面をCMP加工する。そして、このCMP加工を外周研磨面とワーク1の被研磨面とを相対的に回転させながら行うことで、被研磨面の全域をCMP加工して仕上げ研磨する。   In this final polishing, each part operates as described above, so that the outer peripheral polishing surface is partially pressed against the surface to be polished of the work 1 and the workpiece 1 is covered by the chemical liquid supplied from the chemical liquid supply nozzle 71 to the outer peripheral polishing surface. The polished surface is processed by CMP. Then, the CMP process is performed while rotating the outer peripheral polishing surface and the surface to be polished of the workpiece 1 relatively, whereby the entire surface of the surface to be polished is subjected to CMP processing and finish polishing.
なお、ここでは、研磨工具43の外周研磨面の鉛直下方にワーク1の被研磨面の中心Woが位置するようにチャックテーブル32を移動させ、この位置で外周研磨面とワーク1の被研磨面とを接触させてこれらを相対的に回転させることにより、被研磨面の全域を仕上げ研磨することとした。これに対し、チャックテーブル32上のワーク1の被研磨面の一部(例えば、ワーク1の被研磨面の研磨工具43下方への侵入側の端部部分)が研磨工具43の外周研磨面とオーバーラップする位置を初期位置として外周研磨面とワーク1の被研磨面とを接触させてCMP加工を開始し、その後チャックテーブル32を水平移動させて研磨工具43の下方に進入させながらCMP加工を行い、被研磨面の全域を仕上げ研磨するようにしてもよい。   Here, the chuck table 32 is moved so that the center Wo of the surface to be polished of the workpiece 1 is positioned vertically below the outer peripheral polishing surface of the polishing tool 43, and at this position, the outer peripheral polishing surface and the surface to be polished of the workpiece 1 are polished. The entire surface of the surface to be polished was subjected to final polishing by rotating them relative to each other. On the other hand, a part of the surface to be polished of the workpiece 1 on the chuck table 32 (for example, the end portion of the surface to be polished of the workpiece 1 on the entry side below the polishing tool 43) is the outer peripheral polishing surface of the polishing tool 43. With the overlapping position as the initial position, the outer peripheral polishing surface and the polished surface of the work 1 are brought into contact with each other to start CMP processing, and then the chuck table 32 is moved horizontally to enter the lower portion of the polishing tool 43 while performing CMP processing. It is possible to finish and polish the entire surface to be polished.
なお、仕上げ研磨を終えたならば、制御手段140の制御のもと、チャックテーブル32がワーク搬入出域E1に移動し、搬出手段92の吸着パッド922により吸着保持されて洗浄手段130に搬出される。洗浄手段130に搬出されたワーク1は、洗浄手段130にて被研磨面が洗浄された後、搬出入手段110のロボットアーム111によって把持されてカセット102に搬出され、カセット102内に収容される。また、上記の研磨加工後のワーク1の搬出の後、チャックテーブル32上には、搬入手段91によって次のワーク1が搬入保持される。   When finishing polishing is finished, the chuck table 32 moves to the work carry-in / out area E1 under the control of the control means 140, is sucked and held by the suction pad 922 of the carry-out means 92, and is carried out to the cleaning means 130. The After the surface to be polished is cleaned by the cleaning unit 130, the workpiece 1 transported to the cleaning unit 130 is gripped by the robot arm 111 of the loading / unloading unit 110, transported to the cassette 102, and stored in the cassette 102. . Further, after unloading the workpiece 1 after the above-described polishing, the next workpiece 1 is loaded and held on the chuck table 32 by the loading means 91.
以上説明したように、本実施の形態によれば、研磨工具43の研磨面を、ワーク1の被研磨面の外形以上の大きさを有する第1の研磨パッド45で形成された中央研磨面と、中央研磨面の外周を囲繞する第2の研磨パッド46で形成された外周研磨面とで構成することができる。そして、中央研磨面と外周研磨面とが段差を形成して外周研磨面が中央研磨面から突出するように研磨工具43の研磨面を構成することができる。これによれば、中央研磨面と外周研磨面とを個別に用い、ワークの被研磨面に対し、第1の研磨パッド45による粗研磨と第2の研磨パッド46による仕上げ研磨とを行うことができる。具体的には、ワーク1の被研磨面の全域が中央研磨面とオーバーラップする態様でワーク1の被研磨面に中央研磨面を接触させて被研磨面の全域をCMP加工して粗研磨することができる。そして、ワーク1の被研磨面の中心Woを含む領域が外周研磨面とオーバーラップする態様でワーク1の被研磨面に外周研磨面を部分的に接触させながら、これらを相対的に回転させることによって被研磨面の全域をCMP加工して仕上げ研磨することができる。ここで、このように中央研磨面によって粗研磨を行い、その後外周研磨面によって仕上げ研磨を行うことにより、仕上げ研磨後の被研磨面のヘイズを示す値(10nm以下、数nm〜数十nmの周期の極めて微細な凹凸を示す値)の改善が実現でき、高い研磨品質が達成できる。したがって、本実施の形態によれば、装置の大型化を伴わずに異なる種類の研磨(本実施の形態では粗研磨と仕上げ研磨)の実現が可能となる。これによれば、コストの増大を防止できるとともに、装置構成の複雑化を防止できる。   As described above, according to the present embodiment, the polishing surface of the polishing tool 43 is a central polishing surface formed by the first polishing pad 45 having a size equal to or larger than the outer shape of the surface to be polished of the workpiece 1. The outer peripheral polishing surface formed by the second polishing pad 46 surrounding the outer periphery of the central polishing surface can be used. The polishing surface of the polishing tool 43 can be configured such that the central polishing surface and the outer peripheral polishing surface form a step so that the outer peripheral polishing surface protrudes from the central polishing surface. According to this, the central polishing surface and the outer peripheral polishing surface are separately used, and the rough polishing by the first polishing pad 45 and the final polishing by the second polishing pad 46 can be performed on the surface to be polished of the workpiece. it can. Specifically, the entire polishing surface of the workpiece 1 is overlapped with the central polishing surface, the central polishing surface is brought into contact with the polishing surface of the workpiece 1, and the entire polishing surface is subjected to rough polishing by CMP. be able to. Then, the region including the center Wo of the surface to be polished of the work 1 is relatively rotated while the outer peripheral polishing surface is partially in contact with the surface to be polished of the workpiece 1 in such a manner that the region including the outer peripheral polishing surface overlaps. Thus, the entire surface of the surface to be polished can be finish-polished by CMP. Here, rough polishing is performed by the central polishing surface in this way, and then final polishing is performed by the outer peripheral polishing surface, thereby indicating a haze value of the polished surface after final polishing (10 nm or less, several nm to several tens of nm). Improvement of the value indicating extremely fine irregularities of the cycle) can be realized, and high polishing quality can be achieved. Therefore, according to this embodiment, it is possible to realize different types of polishing (rough polishing and finish polishing in this embodiment) without increasing the size of the apparatus. According to this, an increase in cost can be prevented, and complication of the apparatus configuration can be prevented.
また、スラリーを使用する粗研磨の後に、外周研磨面(第2の研磨パッド46の表面)および中央研磨面(第1の研磨パッド45の表面)の各々に洗浄液を供給して洗浄を行い、中央研磨面および外周研磨面に付着したスラリー等を除去することができる。また、ワーク1の被研磨面に洗浄液を供給して洗浄を行い、ワーク1の被研磨面に付着したスラリー等を除去することができる。これによれば、仕上げ研磨の際に外周研磨面および中央研磨面やワーク1の被研磨面にスラリー等のパーティクルが残留しないため、仕上げ研磨時におけるスクラッチの発生を防止でき、研磨品質をさらに向上させることが可能となる。   Further, after the rough polishing using the slurry, cleaning is performed by supplying a cleaning liquid to each of the outer peripheral polishing surface (the surface of the second polishing pad 46) and the central polishing surface (the surface of the first polishing pad 45), Slurries and the like attached to the central polishing surface and the outer peripheral polishing surface can be removed. Further, cleaning can be performed by supplying a cleaning liquid to the surface to be polished of the work 1 to remove slurry or the like adhering to the surface to be polished of the work 1. According to this, since particles such as slurry do not remain on the outer peripheral polishing surface, the central polishing surface and the polished surface of the work 1 during the final polishing, it is possible to prevent the occurrence of scratches during the final polishing and further improve the polishing quality. It becomes possible to make it.
なお、上記した実施の形態では、研磨面洗浄工程として外周研磨面および中央研磨面の双方を洗浄する構成について説明したが、外周研磨面のみを洗浄する構成としてもよい。この場合には、中央研磨面洗浄機構82は不要であるのでこれを除いて研磨装置10を構成してもよい。   In the above-described embodiment, the configuration in which both the outer peripheral polishing surface and the central polishing surface are cleaned as the polishing surface cleaning step has been described. However, only the outer peripheral polishing surface may be cleaned. In this case, since the central polishing surface cleaning mechanism 82 is unnecessary, the polishing apparatus 10 may be configured by removing this.
また、上記した実施の形態では、中央研磨面によってワーク1の被研磨面の粗研磨を行い、外周研磨面によってワーク1の被研磨面の仕上げ研磨を行う構成としたが、中央研磨面および外周研磨面を用いた研磨の種類は一例であって、適宜選択できる。そして、例えば、選択した研磨の種類に応じた材質の研磨部材で中央研磨面および外周研磨面のそれぞれを形成することによって、ワーク1の被研磨面に対して異なる研磨が実現できる。   In the above-described embodiment, the surface to be polished of the workpiece 1 is roughly polished by the central polishing surface, and the final polishing of the surface to be polished of the workpiece 1 is performed by the peripheral polishing surface. The type of polishing using the polishing surface is an example and can be selected as appropriate. For example, by forming each of the central polishing surface and the outer peripheral polishing surface with a polishing member made of a material corresponding to the selected type of polishing, different polishing can be realized on the surface to be polished of the workpiece 1.
以上のように、本発明の研磨工具、研磨装置および研磨加工方法は、装置の大型化を伴わずに異なる種類の研磨加工を実現するのに適している。   As described above, the polishing tool, the polishing apparatus, and the polishing method of the present invention are suitable for realizing different types of polishing without increasing the size of the apparatus.
1 ワーク
10 研磨装置
20 装置ハウジング
211 テーブル水平移動機構
30 チャックテーブル機構
32 チャックテーブル
40 研磨加工ユニット
42 スピンドルユニット
422 回転スピンドル
423 サーボモータ
43 研磨工具
44 研磨パッド
45 第1の研磨パッド
46 第2の研磨パッド
50 加工ユニット送り機構
54 パルスモータ
60 スラリー供給源
61 スラリー供給路
70 薬液供給機構
81 外周研磨面洗浄機構
82 中央研磨面洗浄機構
83 被研磨面洗浄機構
91 搬入手段
92 搬出手段
101,102 カセット
110 搬出入手段
120 位置決め手段
130 洗浄手段
140 制御手段
E1 ワーク搬入出域
E2 ワーク研磨加工域
DESCRIPTION OF SYMBOLS 1 Work 10 Polishing apparatus 20 Apparatus housing 211 Table horizontal movement mechanism 30 Chuck table mechanism 32 Chuck table 40 Polishing processing unit 42 Spindle unit 422 Rotating spindle 423 Servo motor 43 Polishing tool 44 Polishing pad 45 First polishing pad 46 Second polishing Pad 50 Processing unit feed mechanism 54 Pulse motor 60 Slurry supply source 61 Slurry supply path 70 Chemical solution supply mechanism 81 Outer peripheral polishing surface cleaning mechanism 82 Central polishing surface cleaning mechanism 83 Polished surface cleaning mechanism 91 Carrying means 92 Unloading means 101, 102 Cassette 110 Loading / unloading means 120 Positioning means 130 Cleaning means 140 Control means E1 Workpiece loading / unloading area E2 Work polishing area

Claims (6)

  1. 研磨面を有し、該研磨面によって研磨対象のワークの被研磨面を研磨加工する研磨工具であって、
    前記研磨面は、前記ワークの被研磨面の外形以上の大きさを有する中央研磨面と、該中央研磨面の外周を囲繞する外周研磨面とで構成され、前記中央研磨面と前記外周研磨面とが段差を形成して前記外周研磨面が前記中央研磨面から突出していることを特徴とする研磨工具。
    A polishing tool having a polishing surface and polishing the surface to be polished of a workpiece to be polished by the polishing surface,
    The polishing surface includes a central polishing surface having a size equal to or larger than an outer shape of a surface to be polished of the workpiece, and an outer peripheral polishing surface surrounding an outer periphery of the central polishing surface, and the central polishing surface and the outer peripheral polishing surface Forming a step and the outer peripheral polishing surface protrudes from the central polishing surface.
  2. 前記中央研磨面と前記外周研磨面とが異なる研磨部材で形成されたことを特徴とする請求項1に記載の研磨工具。   The polishing tool according to claim 1, wherein the central polishing surface and the outer peripheral polishing surface are formed of different polishing members.
  3. ワークを保持する保持面を有する保持手段と、
    研磨面を有し、前記保持手段の保持面に保持された前記ワークの被研磨面を研磨加工する研磨工具および該研磨工具を回転可能に支持するスピンドルを有する研磨手段と、
    前記研磨工具の研磨面と前記保持手段の保持面とを互いに平行な面内で相対的に移動させる平行移動手段と、
    前記研磨工具の研磨面と前記保持手段の保持面とを該保持手段の保持面の直交方向に相対的に移動させる直交移動手段と、
    を備え、
    前記研磨工具の研磨面は、前記ワークの被研磨面の外形以上の大きさを有する中央研磨面と、該中央研磨面の外周を囲繞する外周研磨面とで構成され、前記中央研磨面と前記外周研磨面とが段差を形成して前記外周研磨面が前記中央研磨面から突出していることを特徴とする研磨装置。
    Holding means having a holding surface for holding the workpiece;
    A polishing tool having a polishing surface, a polishing tool for polishing the surface to be polished of the workpiece held by the holding surface of the holding means, and a polishing means having a spindle for rotatably supporting the polishing tool;
    Parallel moving means for relatively moving the polishing surface of the polishing tool and the holding surface of the holding means in a plane parallel to each other;
    Orthogonal moving means for relatively moving the polishing surface of the polishing tool and the holding surface of the holding means in the orthogonal direction of the holding surface of the holding means;
    With
    The polishing surface of the polishing tool is composed of a central polishing surface having a size equal to or larger than the outer shape of the surface to be polished of the workpiece, and an outer peripheral polishing surface surrounding an outer periphery of the central polishing surface, the central polishing surface and the A polishing apparatus, wherein a step is formed with an outer peripheral polishing surface, and the outer peripheral polishing surface protrudes from the central polishing surface.
  4. 少なくとも前記外周研磨面を洗浄する研磨面洗浄手段と、
    前記ワークの被研磨面を洗浄する被研磨面洗浄手段と、
    を備えることを特徴とする請求項3に記載の研磨装置。
    Polishing surface cleaning means for cleaning at least the outer peripheral polishing surface;
    A polished surface cleaning means for cleaning the polished surface of the workpiece;
    The polishing apparatus according to claim 3, further comprising:
  5. 研磨面を有する研磨工具を用い、前記研磨面によって研磨対象のワークの被研磨面を研磨加工する研磨加工方法であって、
    前記研磨面は、前記ワークの被研磨面の外形以上の大きさを有する中央研磨面と該中央研磨面の外周を囲繞する外周研磨面とで構成され、前記中央研磨面と前記外周研磨面とが段差を形成して前記外周研磨面が前記中央研磨面から突出しており、
    前記被研磨面を露出させた状態で前記ワークを保持する保持工程と、
    前記ワークの被研磨面に前記中央研磨面を接触させて前記ワークの被研磨面を研磨加工する第1の研磨工程と、
    前記ワークの被研磨面に前記外周研磨面を接触させて前記ワークの被研磨面を研磨加工する第2の研磨工程と、
    を含むことを特徴とする研磨加工方法。
    A polishing method using a polishing tool having a polishing surface, and polishing the surface to be polished of a workpiece to be polished by the polishing surface,
    The polishing surface is composed of a central polishing surface having a size equal to or larger than the outer shape of the surface to be polished of the workpiece and an outer peripheral polishing surface surrounding an outer periphery of the central polishing surface, and the central polishing surface, the outer peripheral polishing surface, Forming a step and the outer peripheral polishing surface protrudes from the central polishing surface,
    A holding step of holding the workpiece with the polished surface exposed;
    A first polishing step of polishing the surface to be polished of the workpiece by bringing the central polishing surface into contact with the surface to be polished of the workpiece;
    A second polishing step in which the outer peripheral polishing surface is brought into contact with the polished surface of the workpiece to polish the polished surface of the workpiece;
    A polishing method comprising the steps of:
  6. 前記第1の研磨工程の後、前記第2の研磨工程の前に少なくとも前記外周研磨面および前記ワークの被研磨面を洗浄する洗浄工程を含むことを特徴とする請求項5に記載の研磨加工方法。   6. The polishing process according to claim 5, further comprising a cleaning step of cleaning at least the outer peripheral polishing surface and the surface to be polished of the workpiece after the first polishing step and before the second polishing step. Method.
JP2009181892A 2009-08-04 2009-08-04 Polishing tool, polishing device, and polishing machining method Pending JP2011031359A (en)

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