CN116551188A - Infrared ultrafast laser beam wafer thinning method and system approximately perpendicular to wafer surface - Google Patents

Infrared ultrafast laser beam wafer thinning method and system approximately perpendicular to wafer surface Download PDF

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Publication number
CN116551188A
CN116551188A CN202210114177.9A CN202210114177A CN116551188A CN 116551188 A CN116551188 A CN 116551188A CN 202210114177 A CN202210114177 A CN 202210114177A CN 116551188 A CN116551188 A CN 116551188A
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wafer
laser
thinning
laser beam
ultrafast laser
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请求不公布姓名
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Beijing Yingke Technology Co ltd
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Beijing Yingke Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides an infrared ultrafast laser beam wafer thinning method and system approximately perpendicular to a wafer surface, wherein the method comprises the following steps: 1) Attaching a film on the functional surface of the wafer and then adsorbing and fixing the functional surface on a vacuum adsorption device; the vacuum adsorption device is horizontally fixed on the movable bearing table; the movable bearing table can move along an X axis, a Y axis and a Z axis and can rotate automatically; 2) Setting an ultrafast laser beam emitted by an infrared ultrafast laser, and acting on the surface of a wafer to be thinned through a laser vibrating mirror thinning scanning head after passing through an optical path system, and 3) realizing thinning of the wafer by scanning the laser beam approximately perpendicular to a thinning surface in a direction approximately parallel to the thinning surface. According to the wafer thinning method, the wafer thinning is realized through the ultrafast laser vaporization material processing surface with high single pulse energy, photons with high consistency are adopted to act on the wafer, the processing is more accurate, and the thinning effect is better.

Description

Infrared ultrafast laser beam wafer thinning method and system approximately perpendicular to wafer surface
Technical Field
The invention relates to the technical field of semiconductor laser processing, in particular to an infrared ultrafast laser beam wafer thinning method and system approximately perpendicular to a wafer surface.
Background
The integrated circuit fabrication process places high demands on the dimensional accuracy, geometric accuracy, surface cleanliness, and surface micro-lattice structure of the wafer. Therefore, instead of using very thin wafers from the beginning in the integrated circuit fabrication process, wafers of a certain thickness are transferred and flowed during the fabrication process, and then the substrate material of a certain thickness is removed from the back side of the wafer, i.e., the wafer thinning process, prior to the integrated circuit packaging. To reduce the thickness of subsequently formed chips. So as to improve the heat dissipation effect of the chip and facilitate the later packaging.
Electronic products are increasingly tending to multifunctional integration and miniaturization, and the requirements on portability are higher. This requires the circuit chip to be continuously developed toward high density, high performance, and thin and small size, which requires the chip package to be continuously reduced in thickness. Taking the memory as an example, the package form is mainly stack package. With the increasing storage capacity, the number of layers of packaging is up to 96 or more, and in order to meet the advanced packaging requirement of the IC, the thickness of each layer of chips in the stack is inevitably required to be thinned under the trend that the overall thickness of the packaging is unchanged or even reduced. In general, more advanced multilayer packages use chips with a thickness of 100 μm or less and even 30 μm or less.
By adopting the traditional grinding process, a layer of protection adhesive tape is covered on the functional surface of the wafer, so that the pollution of the wafer surface caused by impurities generated in the process of grinding the back surface of the wafer is avoided, and the damage of the functional surface of the wafer caused by direct contact of the functional surface of the wafer and grinding equipment is avoided, thereby reducing the quality of chips.
At present, the wafer is thinned by adopting laser, and the method does not need to be contacted with the wafer in the thinning process, so that the thinning speed is higher, and compared with the traditional polishing process, the method has the incomparable advantage. However, in the current laser thinning method, due to reasons of uneven photons, low energy and the like, the thermal influence is large, and the wafer can be thinned only through water jet assistance, so that the polishing effect on the processing surface of the wafer is poor.
Disclosure of Invention
In view of the above, in order to overcome the defects in the prior art, the invention provides an infrared ultrafast laser beam wafer thinning method approximately perpendicular to a wafer surface, which can thin the wafer to 80+/-5 um, wherein the roughness is 3-15nm, and the flatness is +/-2 um.
The invention provides an infrared ultrafast laser beam wafer thinning method approximately perpendicular to a wafer surface, which comprises the following steps:
1) Attaching a film on the functional surface of the wafer and then adsorbing and fixing the functional surface on a vacuum adsorption device; the vacuum adsorption device is horizontally fixed on the movable bearing table; the movable bearing table can move along an X axis, a Y axis and a Z axis and can rotate automatically;
2) An ultrafast laser beam emitted by an infrared ultrafast laser is arranged, the ultrafast laser beam is acted on the surface of a wafer to be thinned through a laser galvanometer thinning scanning head after passing through an optical path system,
3) The ultrafast laser realizes the thinning of the wafer by scanning the laser beam approximately perpendicular to the thinning surface in the direction approximately parallel to the thinning surface.
The approximately vertical means that the included angle between the laser beam and the wafer surface is in the range of 90 degrees plus or minus 45 degrees; the approximate parallelism is that the included angle between the scanning direction and the wafer surface is in the range of 0 DEG plus or minus 45 deg.
Further, the laser is an infrared ultrafast laser capable of emitting high-energy monopulses at a high repetition frequency, wherein the high repetition frequency is 300KHz-500KHz, the high-energy monopulses are 10uJ-20uJ, and the energy difference between the monopulses is less than or equal to +/-5%; the locked emission frequency is a certain value between 300KHz and 500 KHz.
Further, the ultrafast laser emitted by the laser device is amplified in beam size through a shaping optical path, input to a galvanometer through a beam transmission optical path, and focused on the surface of a wafer on a movable bearing table through a laser galvanometer thinning scanning head after passing through a field lens; under the control of the software and hardware controller, setting laser emission parameters, controlling the rotation and translation of the wafer and the scanning of the laser beam, and finishing the laser thinning of the wafer.
Further, the rotating speed of the vibrating mirror is 100-10000 revolutions per second.
Further, the method also comprises the step 4) of automatically measuring the thickness of the wafer in real time and adjusting the scanning speed of the vibrating mirror in real time according to the thickness data of the wafer so that the wafer reaches the required thickness.
Further, the laser is an all-solid-state picosecond laser, the laser wavelength is 1064+/-5 nm, and the single pulse width is 1-15ps.
Further, the window light spot of the laser is 1-3mm, and the divergence angle is 0.5-1.5mrad.
Further, the shaping light path is a beam expanding light path with the magnification of 1-8 times, and the transmission distance of the beam transmission light path is 10-1000mm.
Further, the field lens is an F-theta field lens or a telecentric field lens, and the focal length is 30-300mm.
The invention also provides a system for realizing the ultrafast laser beam wafer thinning method, which comprises an operation table, a laser optical system and a controller,
the movable bearing table is arranged on the operating table, can move along an X axis, a Y axis and a Z axis and can rotate automatically; the movable bearing table is provided with a vacuum adsorption device for adsorbing the wafer;
the laser optical system comprises a laser bearing box, a light guide mechanism and a laser galvanometer thinning scanning head;
the laser in the laser bearing box is connected with a computer controller provided with laser thinning scanning system software through a data line, the computer controller inputs the controlled laser power, scanning speed and repetition frequency signals to the laser, and receives pulse synchronous signals of the laser, and meanwhile controls the laser scanning beam and the movable bearing table to move to finish ultrafast laser beam wafer thinning.
The invention has the beneficial effects that:
1. the invention realizes the thinning of the wafer by the horizontal scanning of the locking frequency high-energy single-pulse ultrafast laser beam approximately vertical to the wafer surface. The laser resolution is higher, the consistency is good, and compared with the traditional laser finishing method, the processing precision is greatly improved. The wafer can be thinned to 80+/-5 um, the roughness is 3-15nm, and the flatness is +/-2 um.
2. The method realizes the thinning of the wafer by the ultrafast laser vaporization material processing surface with high single pulse energy instead of the heat-to-melting action, so that the phenomena of almost no heat affected zone occurrence, almost no slag hanging, no crack, no edge breakage and the like of the processing surface are avoided. Cooling water is not needed in the processing process.
3. The high-energy monopulse output by the repairing method provided by the invention is unique in appearance in a time domain, the specific position point of the thinned surface of the wafer is very accurate during processing, no drift occurs in space, and the processing quality is very good.
4. The laser wafer thinning method has the advantages of quick processing time, almost no leakage point or leakage mark, and accurate time sequence matching.
5. Under the irradiation of the ultrafast laser equipment with high single pulse energy consistency, the consistency of the optical processing process is good, the optical quality of the thinned wafer surface is high, the wafer surface is clear and bright, vortex-shaped knife marks can not appear, the material is hardly darkened, and the characteristic parameters of the material are hardly changed.
6. The laser wafer thinning method has higher efficiency and lower cost.
Description of the drawings:
FIG. 1 is a schematic diagram of the working principle of the infrared ultrafast laser beam wafer thinning method approximately perpendicular to the wafer surface according to the present invention;
FIG. 2 is a schematic diagram of an infrared ultrafast laser beam wafer thinning system approximately perpendicular to the wafer surface according to the present invention;
FIG. 3 is a schematic illustration of the present invention for polishing a wafer from the side with an infrared ultrafast laser beam approximately perpendicular to the wafer face;
FIG. 4 is a schematic diagram of the invention for thinning an infrared ultrafast laser galvanometer scanning laser beam applied to a wafer surface approximately perpendicular to the wafer surface;
wherein: 1. an infrared ultrafast laser; 2. an optical path; 2-1, shaping the light path; 2-2, a beam transmission light path; 3. vibrating mirror; 4. a field lens; 5. a wafer; 6. a vacuum adsorption device; 7. the laser comprises a controller, a reflector, a 9, an operating table, a 10, a movable bearing table, a 11, a laser bearing box and an electrical control cabinet, a 12, a light guide mechanism, a 13, an optical isolator, a 14, a laser vibrating mirror thinning scanning head, a 15, a CCD vision system, a 16, a wafer thickness measuring device, a 17, a turntable, a 18, a lifting mechanism and a 19, wherein the laser vibrating mirror scans a laser beam.
Detailed Description
The invention provides a method and system for wafer thinning of an infrared ultrafast laser beam approximately perpendicular to a wafer surface, which is further explained below with reference to the drawings and the specific embodiments, but the invention is not limited to the following embodiments.
The invention provides an infrared ultrafast laser beam wafer thinning method approximately perpendicular to a wafer surface, which comprises the following steps:
1) The functional surface of the wafer 5 is stuck with a film and then is adsorbed and fixed on a vacuum adsorption device 6; the vacuum adsorption device 6 is horizontally fixed on the movable bearing table 10; the movable bearing table 10 can move along an X axis, a Y axis and a Z axis and can rotate automatically;
2) An ultrafast laser beam emitted by the infrared ultrafast laser 1 is arranged, the ultrafast laser beam is acted on the surface of the wafer 5 to be thinned through the laser galvanometer thinning scanning head 14 after passing through the optical path 2 system,
3) The ultrafast laser achieves thinning of the wafer 5 with a scanning of the laser beam 19 approximately perpendicular to the thinning surface in a direction approximately parallel to the thinning surface.
The approximately vertical means that the included angle between the laser beam and the wafer surface is in the range of 90 degrees plus or minus 45 degrees; the approximate parallelism is that the included angle between the scanning direction and the wafer surface is in the range of 0 DEG plus or minus 45 deg.
Further, the laser 1 is an infrared ultrafast laser capable of emitting high-energy single pulses at a high repetition frequency, wherein the high repetition frequency is 300KHz-500KHz, the high-energy single pulse energy is 10uJ-20uJ, and the energy difference between the single pulses is less than or equal to +/-5%; the locked emission frequency is a certain value between 300KHz and 500 KHz.
Further, the ultrafast laser emitted by the laser 1 is amplified in beam size through the shaping optical path 2-1, is input to the galvanometer 3 through the beam transmission optical path 2-2, and is focused on the surface of the wafer 5 on the movable bearing table 10 through the laser galvanometer thinning scanning head 14 after passing through the field lens 4; under the control of the software and hardware controller 7, laser emission parameters are set, rotation and translation of the wafer 5 and scanning of the laser beam 19 are controlled, and laser thinning of the wafer is completed.
Further, the rotating speed of the vibrating mirror 3 is 100-10000 revolutions per second.
Further, the method also comprises the step 4) of automatically measuring the thickness of the wafer in real time and adjusting the scanning speed of the vibrating mirror in real time according to the thickness data of the wafer so that the wafer reaches the required thickness.
Further, the laser is an all-solid-state picosecond laser, the laser wavelength is 1064+/-5 nm, and the single pulse width is 1-15ps.
Further, the window light spot of the laser 1 is 1-3mm, and the divergence angle is 0.5-1.5mrad.
Further, the shaping optical path 2-1 is a beam expanding optical path with the magnification of 1-8 times, and the transmission distance of the beam transmission optical path 2-2 is 10-1000mm.
Further, the field lens 4 is an F-theta field lens or a telecentric field lens, and the focal length is 30-300mm.
The invention provides a system for realizing the infrared ultrafast laser beam wafer thinning method, which comprises an operating platform 9, a laser optical system and a controller 7,
the movable bearing table 10 is arranged on the operation table 9, the movable bearing table 10 can move along an X axis, a Y axis and a Z axis, a turntable 17 is arranged on the movable bearing table 10, and the turntable 17 can rotate; the turntable 17 is provided with a vacuum adsorption device 6 for adsorbing the wafer 5;
the laser optical system comprises a laser bearing box 11, a light guide mechanism 12 and a laser galvanometer thinning scanning head 14; the laser carrying box is connected with a computer controller 7 provided with laser thinning scanning system software through a data line by the laser 1 in the electrical control cabinet 11, the computer controller 7 inputs the controlled laser power, scanning speed and repetition frequency signals to the laser 1 and receives pulse synchronous signals of the laser, and simultaneously controls the laser scanning beam 21 and the movable carrying table 10 to move to finish ultrafast laser beam wafer thinning.
As one embodiment of the present invention, the transmission distance of the beam transmission path 2-2 is 100-1000mm; preferably 100-800mm; more preferably 500-800mm.
As another embodiment of the present invention, the shaping optical path 2-1 is a beam expanding optical path with a magnification of 1-8 times; preferably, the shaping light path is a beam expanding light path with the magnification of 2-6 times; more preferably, the shaping optical path is a beam expanding optical path with a magnification of 5 times.
As a further embodiment of the invention, the rotation speed of the vibrating mirror is 100-10000 revolutions per second; preferably, the rotation speed of the vibrating mirror is 400-5000 rpm; more preferably, the rotational speed of the vibrating mirror is 500-1000 rpm.
As a further embodiment of the invention, the field lens is an F-theta field lens or a telecentric field lens 4, and the focal length is 30-300mm; preferably, the field lens is an F-theta field lens or a telecentric field lens, and the focal length is 100-300mm; more preferably, the field lens is an F-theta field lens or a telecentric field lens, and the focal length is 150-250mm.
Example 1
As shown in fig. 2, the console 9 is provided with a movable carrying table 10. A lifting mechanism 18 is arranged below the movable bearing platform 10; the movable bearing platform 10 is provided with a turntable 17, the turntable 17 can rotate, the turntable 17 is provided with a vacuum adsorption device 6, and the vacuum adsorption device 6 is used for adsorbing and fixing the wafer 5.
The laser 1 is an infrared ultrafast laser capable of emitting high-energy monopulses at high repetition frequencies and high in monopulse energy consistency, the locking emission frequency is 400KHz, the high-energy monopulse energy is 20uJ, and the energy difference between monopulses is less than or equal to +/-5%.
The rotation speed of the vibrating mirror 3 is 2000 rpm.
The wafer thickness measuring device 16 automatically measures the thickness of the wafer 5 in real time and adjusts the scanning speed of the vibrating mirror 3 in real time according to the wafer thickness data so that the wafer reaches the required thickness.
The laser 1 is an all-solid-state picosecond laser, the laser wavelength is 1064+/-5 nm, and the single pulse width is 10ps.
The window spot of the laser 1 was 3mm and the divergence angle was 1.0mrad.
The shaping light path 2-1 is a beam expanding light path with the magnification of 6 times, and the transmission distance of the beam transmission light path 2-2 is 500mm.
The field lens 4 is a telecentric field lens, and the focal length is 200mm.
The ultrafast laser emitted by the laser 1 is amplified in beam size through a shaping optical path 2-1, is input to the galvanometer 3 through a beam transmission optical path 2-2, is focused on the surface of the wafer 5 on the movable bearing table 10 through a laser galvanometer thinning scanning head 14 after passing through the field lens 4; under the control of the software and hardware controller 7, laser emission parameters are set, rotation, lifting and scanning of the wafer 5 and the laser beam 19 are controlled, and laser thinning of the wafer is completed.
Wherein a mirror 8 is used in the transmission path 2-2 to redirect the beam, and an optical isolator 13 prevents the laser light from returning.
The laser bearing box and the electrical control cabinet 11 are provided with a CCD vision system 15 and a wafer thickness measuring device 16 on one side close to the wafer, and can move along the height direction of the laser bearing box and the electrical control cabinet 11 for positioning the wafer and detecting the thickness of the wafer in real time.
An infrared ultrafast laser galvanometer scanning laser beam approximately perpendicular to the wafer surface acts on the wafer surface to perform the thinning process, as shown in fig. 4.
The infrared ultrafast laser beam of the present invention, approximately perpendicular to the wafer face, can also polish the wafer from the side as shown in fig. 3.
The above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, one skilled in the art may make modifications and equivalents to the specific embodiments of the present invention, and any modifications and equivalents thereof without departing from the spirit and scope of the present invention are within the scope of the claims of the present invention.

Claims (10)

1. A method of infrared ultrafast laser beam wafer thinning approximately perpendicular to a wafer surface, the method comprising the steps of:
1) Attaching a film on the functional surface of the wafer and then adsorbing and fixing the functional surface on a vacuum adsorption device; the vacuum adsorption device is horizontally fixed on the movable bearing table; the movable bearing table can move along an X axis, a Y axis and a Z axis and can rotate automatically;
2) An ultrafast laser beam emitted by an infrared ultrafast laser is arranged, the ultrafast laser beam is acted on the surface of a wafer to be thinned through a laser galvanometer thinning scanning head after passing through an optical path system,
3) The ultrafast laser realizes the thinning of the wafer by scanning the laser beam approximately perpendicular to the thinning surface in the direction approximately parallel to the thinning surface.
2. The method for thinning an infrared ultrafast laser beam wafer according to claim 1, wherein the laser is an infrared ultrafast laser capable of emitting high-energy single pulses at a high repetition frequency and high in single pulse energy consistency, the high repetition frequency is 300KHz-500KHz, the high-energy single pulse energy is 10uJ-20uJ, and the energy difference between single pulses is less than or equal to +/-5%; the locked emission frequency is a certain value between 300KHz and 500 KHz.
3. The method for thinning the wafer by the infrared ultrafast laser beam according to claim 1, wherein the ultrafast laser emitted by the laser is focused on the surface of the wafer on the movable bearing table by the laser vibrating mirror thinning scanning head after being amplified in beam size by a shaping optical path, input to the vibrating mirror by a beam transmission optical path and then passes through the field lens; under the control of the software and hardware controller, setting laser emission parameters, controlling the rotation and translation of the wafer and the scanning of the laser beam, and finishing the laser thinning of the wafer.
4. The method for thinning an infrared ultrafast laser beam wafer according to claim 1, wherein the rotation speed of the vibrating mirror is 100-10000 rotations per second.
5. The method of claim 4, further comprising the step of 4) automatically measuring the thickness of the wafer in real time and adjusting the scanning speed of the galvanometer in real time according to the thickness data of the wafer to achieve the desired thickness of the wafer.
6. The method for thinning the wafer by the infrared ultrafast laser beam according to claim 2, wherein the laser is an all-solid-state picosecond laser, the laser wavelength is 1064+/-5 nm, and the single pulse width is 1-15ps.
7. The method for thinning the wafer by the infrared ultrafast laser beam according to claim 1, wherein the window light spot of the laser is 1-3mm, and the divergence angle is 0.5-1.5mrad.
8. The method for thinning an infrared ultrafast laser beam wafer according to claim 3, wherein the shaping optical path is an expanded beam optical path with a magnification of 1-8 times, and a transmission distance of the beam transmission optical path is 10-1000mm.
9. The method for thinning an infrared ultrafast laser beam wafer according to claim 1, wherein the field lens is an F- θ field lens or a telecentric field lens, and the focal length is 30-300mm.
10. A system for implementing the method for thinning an infrared ultrafast laser beam wafer according to claim 1, wherein the system comprises a console, a laser optical system and a controller,
the movable bearing table is arranged on the operating table, can move along an X axis, a Y axis and a Z axis and can rotate automatically; the movable bearing table is provided with a vacuum adsorption device for adsorbing the wafer;
the laser optical system comprises a laser bearing box, a light guide mechanism and a laser galvanometer thinning scanning head;
the laser in the laser bearing box is connected with a computer controller provided with laser thinning scanning system software through a data line, the computer controller inputs the controlled laser power, scanning speed and repetition frequency signals to the laser, and receives pulse synchronous signals of the laser, and meanwhile controls the laser scanning beam and the movable bearing table to move to finish ultrafast laser beam wafer thinning.
CN202210114177.9A 2022-01-30 2022-01-30 Infrared ultrafast laser beam wafer thinning method and system approximately perpendicular to wafer surface Pending CN116551188A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117182688A (en) * 2023-11-06 2023-12-08 江苏京创先进电子科技有限公司 Thinning method, system and thinning machine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117182688A (en) * 2023-11-06 2023-12-08 江苏京创先进电子科技有限公司 Thinning method, system and thinning machine
CN117182688B (en) * 2023-11-06 2024-03-12 江苏京创先进电子科技有限公司 Thinning method, system and thinning machine

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