CN107053499B - Method for processing wafer - Google Patents
Method for processing wafer Download PDFInfo
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- CN107053499B CN107053499B CN201610825396.2A CN201610825396A CN107053499B CN 107053499 B CN107053499 B CN 107053499B CN 201610825396 A CN201610825396 A CN 201610825396A CN 107053499 B CN107053499 B CN 107053499B
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- modified layer
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- laser beam
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 103
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 1
- 238000003672 processing method Methods 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000593 degrading effect Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
A method for processing a wafer, wherein a wafer formed by dividing at least a 2 nd planned dividing line out of a 1 st planned dividing line and a 2 nd planned dividing line formed vertically into device chips is divided, the method for processing the wafer comprising a 1 st direction modified layer forming step of forming a 1 st direction modified layer inside the wafer along the 1 st planned dividing line, and a 2 nd direction modified layer forming step of forming a 2 nd direction modified layer inside the wafer along the 2 nd planned dividing line, the 2 nd direction modified layer forming step comprising a T-shaped path processing step of forming a 2 nd direction modified layer inside the 2 nd planned dividing line intersecting the 1 st planned dividing line formed with the 1 st direction modified layer in a T-shaped path, wherein in the T-shaped path processing step, an end of the 2 nd direction modified layer is formed in a reverse step shape from a lower layer to an upper layer toward the 1 st direction modified layer formed previously.
Description
Technical Field
The present invention relates to a method for processing a wafer such as a silicon wafer or a sapphire wafer.
Background
A wafer such as a silicon wafer or a sapphire wafer has a plurality of devices such as ICs, LSIs, and LEDs divided by lines to be divided and formed on a front surface, and the wafer is divided into device chips by a processing apparatus, and the divided device chips are widely used in various electronic devices such as a mobile phone and a personal computer.
For the dicing of the wafer, is a general dicing method using a cutting device called a scriber, and in the dicing method, a wafer is cut by cutting the wafer into pieces at a high speed of about 30000rpm, and the wafer is divided into device chips, and abrasive grains such as diamond-like carbon are solidified with a metal or a resin to have a thickness of about 30 μm.
Further, , a method of dividing a wafer into device chips by using a laser beam has been developed and put into practical use in recent years, and as a method of dividing a wafer into device chips by using a laser beam, the following 1 st and 2 nd processing methods are known.
The processing method 1 is a method in which a converging point of a laser beam having a wavelength (e.g., 1342nm) which is transparent to a wafer is positioned inside the wafer corresponding to a line to be divided, the laser beam is irradiated along the line to be divided to form a modified layer inside the wafer, and then an external force is applied to the wafer by a dividing device to divide the wafer into device chips with the modified layer as a dividing origin (see, for example, japanese patent No. 3408805).
The 2 nd processing method is a method of irradiating a laser beam having a wavelength (for example, 355nm) that is absorptive for a wafer to a region corresponding to a line to be divided to form a processing groove by ablation processing, and then applying an external force to divide the wafer into device chips with the processing groove as a division starting point (for example, refer to japanese patent laid-open No. h 10-305420).
In the above-described method 1, machining chips are not generated, and is widely used because of the advantages of minimization of a dicing line and waterless machining as compared with dicing with a conventionally used cutting tool.
Also, there are the following advantages in the scribing method based on the irradiation of the laser beam: a wafer having a structure in which planned dividing lines (streets) are not continuous, such as a projection wafer, can be processed (see, for example, japanese patent application laid-open No. 2010-123723). In the processing of a wafer in which the planned dividing lines are not continuous, the processing is performed by turning on/off the output of a laser beam in accordance with the setting of the planned dividing lines.
Patent document 1: japanese patent No. 3408805
Patent document 2: japanese laid-open patent publication No. 10-305420
Patent document 3: japanese patent laid-open publication No. 2010-123723
However, the following problem occurs in the vicinity of the intersection where the planned dividing line extending in the 2 nd direction and the planned dividing line extending continuously in the 1 st direction meet each other in a T-shaped path.
(1) When the 2 nd modified layer is formed inside the 2 nd planned dividing line intersecting the 1 st planned dividing line in a T-shaped path, the 1 st modified layer is formed inside the 1 st planned dividing line parallel to the side of the device in advance, and as the converging point of the laser beam approaches the intersection point of the T-shaped path, the portion of the laser beam for processing the 2 nd planned dividing line is irradiated to the already formed 1 st modified layer, and there is a problem that reflection or scattering of the laser beam occurs, light leaks into the device region, and the device is damaged by the leaked light, thereby degrading the quality of the device.
(2) On the other hand, when the modified layer is formed inside the wafer along the 2 nd planned dividing line meeting the 1 st planned dividing line along the T-shaped path before the modified layer is formed in the 1 st planned dividing line parallel to the side of the device, there is no modified layer that blocks the progress of a crack generated in the modified layer formed in the vicinity of the intersection of the T-shaped paths at the intersection of the T-shaped paths, and the crack extends by about 1 to 2mm from the intersection of the T-shaped paths to reach the device, which causes a problem of degrading the quality of the device.
Disclosure of Invention
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a wafer processing method capable of preventing reflection or scattering of a laser beam in a modified layer formed in advance and preventing damage to a device due to leakage light by suppressing irradiation of a laser beam to the modified layer in the vicinity of an intersection where an end of a line to be divided in the direction meets another line to be divided in the direction in a T-shaped path when performing laser processing on a wafer in which at least the line to be divided in the direction is discontinuously formed.
According to the present invention, there is provided a wafer processing method for dividing a wafer into device chips, the wafer having devices formed in respective regions defined by a plurality of 1 st planned dividing lines formed in a 1 st direction and a plurality of 2 nd planned dividing lines formed in a 2 nd direction intersecting the 1 st direction, the wafer processing method being characterized by comprising a 1 st direction modified layer forming step of condensing a laser beam having a wavelength transmitting to the wafer from the back side of the wafer into the inside of the wafer along the 1 st planned dividing line for irradiation, a 2 nd direction modified layer forming step of forming a plurality of layers along the 1 st planned dividing line inside the wafer along the 1 st direction modified layer after the 1 st direction modified layer forming step is performed, the wafer is divided into the first and second layers, the first and second layers are formed in a conical shape along the 1 st direction modified layer forming direction, the second direction modified layer forming step of forming the plurality of layers along the 1 st direction modified layer of the wafer is performed after the 1 st direction modified layer forming step of dividing layers, the first and the second direction modified layer forming step is performed after the 1 st direction of dividing layers forming step of forming the first and the second direction of forming the second modified layers from the first and the first, the first and the second direction of forming step of forming the second modified layers, the first and the second layers, the second layers are formed along the second direction of forming step, the second direction of forming step of forming the second direction of forming the first, the second modified layers, the first and the second modified layers, the second direction of forming step of forming the second modified layers, the second modified layers forming step of forming the wafer is performed, the wafer from the wafer along the wafer, the second modified layers, the wafer is performed, the second modified layers, the wafer, the second modified layers, the wafer is performed when the second modified layers, the second.
According to the method for processing a wafer of the present invention, since the end portion of the 2 nd direction-modified layer formed in this order is formed in the inverse step shape from the lower layer to the upper layer toward the 1 st direction-modified layer formed first, the conical laser beam does not collide with the 1 st direction-modified layer when the 2 nd direction-modified layer is formed, and therefore, leakage light due to scattering or reflection of the laser beam does not occur, and the problem that the leakage light attacks the device and damages the device can be solved. Therefore, an appropriate modified layer can be formed inside the wafer along the lines to divide without degrading the quality of the device.
Drawings
Fig. 1 is a perspective view of a laser processing apparatus suitable for carrying out the wafer processing method of the present invention.
Fig. 2 is a block diagram of a laser beam generating unit.
Fig. 3 is a perspective view of a semiconductor wafer suitable for processing by the wafer processing method of the present invention.
Fig. 4 is a perspective view showing the 1 st direction modified layer forming step.
Fig. 5 is a schematic cross-sectional view showing the modified layer forming step in the 1 st direction.
Fig. 6 is a schematic plan view showing a T-lane processing step.
Fig. 7 (a), (B), and (C) are cross-sectional views showing a T-shaped path processing step.
Fig. 8 is a perspective view of the partitioning device.
Fig. 9 (a) and (B) are sectional views showing the dividing step.
Description of the reference symbols
11: a semiconductor wafer; 13 a: a 1 st division predetermined line; 13 b: a 2 nd division predetermined line; 15: a device; 17: 1 st direction-modified layer; 19: a 2 nd direction-changing layer; 24: a chuck table; 34: a laser beam irradiation unit; 35: a laser beam generating unit; 38: a condenser (laser head); 40: a shooting unit; 50: and a dividing device.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the drawings, and fig. 1 is a perspective view showing a laser processing apparatus 2 suitable for carrying out a wafer processing method according to an embodiment of the present invention, the laser processing apparatus 2 including pairs of guide rails 6 extending in the Y-axis direction mounted on a stationary base 4.
The Y-axis moving block 8 is moved in the indexing direction, i.e., the Y-axis direction by a Y-axis feed mechanism (Y-axis feed member) 14 including a ball screw 10 and a pulse motor 12, and pairs of guide rails 16 extending in the X-axis direction are fixed to the Y-axis moving block 8.
The X-axis moving block 18 is guided by the guide rail 16 to move in the machining feed direction, i.e., in the X-axis direction, by an X-axis feed mechanism (X-axis feed means) 28 including a ball screw 20 and a pulse motor 22.
A chuck table 24 is mounted on the X-axis moving block 18 via a cylindrical support member 30. A plurality of (4 in the present embodiment) jigs 26 for clamping the ring frame F shown in fig. 4 are arranged on the chuck table 24.
A column 32 is provided upright behind the base 4. A housing 36 of the laser beam irradiation unit 34 is fixed in the column 32. The laser beam irradiation unit 34 includes a laser beam generation unit 35 housed in a case 36, and a condenser (laser head) 38 attached to the front end of the case 36. The condenser 38 is attached to the housing 36 so as to be capable of fine movement in the vertical direction (Z-axis direction).
As shown in fig. 2, the laser beam generating unit 35 includes: a laser oscillator 42 such as a YAG laser oscillator or a YVO4 laser oscillator for oscillating a pulsed laser beam having a wavelength of 1342nm, a repetition frequency setting means 44, a pulse width adjusting means 46, and a power adjusting means 48 for adjusting the power of the pulsed laser beam oscillated from the laser oscillator 42.
A photographing unit 40 is mounted on the front end of the housing 36 of the laser beam irradiation unit 34, and the photographing unit 40 has a microscope and a camera for photographing the wafer 11 held on the chuck table 24. The condenser 38 and the imaging unit 40 are arranged in alignment in the X axis direction.
Referring to fig. 3, a front side perspective view of a semiconductor wafer (hereinafter, may be simply referred to as a wafer) 11 suitable for processing by the wafer processing method of the present invention is shown. A plurality of lines to divide 1 13a formed continuously in the 1 st direction and a plurality of lines to divide 2 13b formed discontinuously in the direction perpendicular to the lines to divide 1 13a are formed on the front surface 11a of the wafer 11, and devices 15 such as an LSI are formed in regions defined by the lines to divide 1a and the lines to divide 2 13 b.
In the method of processing a wafer according to the embodiment of the present invention, the wafer 11 is in the form of a frame unit having a front surface bonded to a dicing tape T having an outer peripheral portion bonded to an annular frame F, and the wafer 11 is placed on the chuck table 24 in the form of the frame unit, sucked and held through the dicing tape T, and the annular frame F is held and fixed by the jig 26.
Although not particularly shown, in the wafer processing method of the present invention, alignment is first performed, the wafer 11 sucked and held by the chuck table 24 is positioned directly below the imaging unit 40 of the laser processing apparatus 2, and the imaging unit 40 images the wafer 11 so that the 1 st line to be divided 13a and the condenser 38 are aligned in the X axis direction.
Next, after the chuck table 24 is rotated by 90 °, the same alignment is performed also on the 2 nd planned dividing line 13b elongated in the direction perpendicular to the 1 st planned dividing line 13a, and the aligned data is stored in the RAM of the controller of the laser processing apparatus 2.
Since the imaging unit 40 of the laser processing apparatus 2 generally includes an infrared camera, the 1 st and 2 nd lines to divide 13a and 13b formed on the front surface 11a can be detected by the infrared camera through the wafer 11 from the back surface 11b side of the wafer 11.
After the alignment, the 1 st direction modified layer forming step is performed to form the 1 st direction modified layer 17 inside the wafer 11 along the 1 st line to divide 13 a. In the 1 st direction modified layer forming step, as shown in fig. 4 and 5, the condenser 38 positions a converging point of a laser beam having a wavelength (e.g., 1342nm) that is transparent to the wafer inside the wafer 11, the 1 st line to be divided 13a is irradiated from the back surface 11b side of the wafer 11, and the chuck table 24 is fed in the direction of arrow X1 in fig. 5, whereby the 1 st direction modified layer 17 along the 1 st line to be divided 13a is formed inside the wafer 11.
Preferably, the condenser 38 is moved upward stepwise to form a plurality of 1 st direction-modified layers 17, for example, 5 1 st direction-modified layers 17, along the 1 st line 13a, in the wafer 11.
The modified layer 17 is a region having a density, a refractive index, a mechanical strength, or other physical properties different from those of the surrounding region, and is formed as a molten re-solidified layer. The processing conditions in the 1 st direction modified layer forming step are set as follows, for example.
Light source: LD actuates Q-switch Nd: YVO4 pulse laser
Wavelength: 1342nm
Repetition frequency: 50kHz
Average output: 0.5W
Diameter of the light-condensing spot: phi 3 mu m
Processing feed speed: 200mm/s
After the 1 st direction modified layer forming step is performed, the 2 nd direction modified layer forming step is performed, in which a 2 nd planned dividing line 13b meeting the 1 st planned dividing line 13a along an end in the extending direction (extending direction) in a T-line is irradiated with a laser beam having a wavelength (e.g., 1342nm) that is transparent to the wafer 11, while the 2 nd direction modified layer 19 along the 2 nd planned dividing line 13b is formed inside the wafer 11.
In the 2 nd direction modified layer forming step, after the chuck table 24 is rotated by 90 °, the 2 nd direction modified layers 19 of a plurality of layers along the 2 nd line to divide 13b are formed inside the wafer 11.
The 2 nd direction modified layer forming step includes a T-line processing step of forming the 2 nd direction modified layer 19 inside the 2 nd line 13b intersecting the 1 st line 13a in which the 1 st direction modified layer 17 is formed in a T-line.
First, as shown in fig. 7 (a), in the T-line processing step, when the converging point of the laser beam LB converging in a conical shape is positioned in the vicinity of the front surface 11a from the back surface 11b of the wafer 11, the 1 st modified layer 19 elongated in the 2 nd direction is formed so that the portion of the conical laser beam LB does not exceed the 1 st direction modified layer 17 formed previously, that is, the irradiation of the laser beam LB is stopped at the position shown in fig. 7 (a), and fig. 6 shows a schematic plan view of fig. 7 (a).
Next, when the 2 nd modified layer 19 is formed so as to overlap the 1 st modified layer 19, the 2 nd modified layer 19 is formed so that the portion of the laser beam LB condensed in a conical shape does not exceed the 1 st direction modified layer 17 formed earlier as shown in fig. 7 (B) at step .
Similarly, the 3 rd modified layer 19, the 4 th modified layer 19, and the 5 th modified layer 19 are formed in this order, and the 2 nd modified layer 19 is formed such that the end of the 2 nd modified layer 19 is in a reverse step shape from the lower layer to the upper layer toward the 1 st modified layer 17 formed earlier.
Here, since the numerical aperture of the condenser lens provided in the condenser 38 is usually set to a large value, the laser beam LB is condensed in a conical shape as shown in fig. 7 (a) and 7 (B).
After the 1 st direction modified layer forming step and the 2 nd direction modified layer forming step are performed, a dividing step is performed in which an external force is applied to the wafer 11 to break the wafer 11 along the 1 st planned dividing line 13a and the 2 nd planned dividing line 13b with the 1 st direction modified layer 17 and the 2 nd direction modified layer 19 as breaking points, thereby dividing the wafer into device chips.
This dividing step is performed using, for example, a dividing device (expanding device) 50 shown in fig. 8. The dividing apparatus 50 shown in fig. 8 includes: a frame holding member 52 that holds the ring frame F; and a tape expanding member 54 that expands the dicing tape T fitted on the ring-shaped frame F held on the frame holding member 52.
The frame holding member 52 is composed of an annular frame holding member 56 and a plurality of clamps 58 as fixing members disposed on the outer periphery of the frame holding member 56. The upper surface of the frame holding member 56 forms a mounting surface 56a on which the ring frame F is mounted, and the ring frame F is mounted on the mounting surface 56 a.
The annular frame F placed on the placement surface 56a is fixed to the frame holding member 52 by the jig 58. The frame holding member 52 configured in this way is supported by the belt expanding member 54 so as to be movable in the vertical direction.
The belt expanding member 54 has an expanding drum 60 disposed inside the annular frame holding member 56. The upper end of the expansion drum 60 is closed by a cover 62. The expanding drum 60 has an inner diameter smaller than the inner diameter of the ring frame F and larger than the outer diameter of the wafer 11 bonded to the dicing tape T attached to the ring frame F.
The expanding drum 60 has a support flange 64 formed integrally with at the lower end thereof, the tape expanding member 54 further has a driving member 66 for moving the annular frame holding member 56 in the vertical direction, the driving member 66 is constituted by a plurality of air cylinders 68 disposed on the support flange 64, and the piston rod 70 is coupled to the lower surface of the frame holding member 56.
The driving means 66 constituted by a plurality of air cylinders 68 moves the annular frame holding member 56 in the vertical direction between a reference position where the placement surface 56a is approximately the same height as of the front surface of the cap 62, which is the upper end of the expanding drum 60, and an expanded position which is lower than the upper end of the expanding drum 60 by a predetermined amount.
The dividing step of the wafer 11 by using the dividing apparatus 50 configured as described above will be described with reference to fig. 9 (a), in which the ring-shaped frame F supporting the wafer 11 via the dicing tape T is placed on the placement surface 56a of the frame holding member 56 and fixed to the frame holding member 56 by the jig 58, as shown in fig. 9 (a), the frame holding member 56 is positioned at a reference position where the placement surface 56a is approximately degrees from the upper end of the expansion drum 60.
Next, the air cylinder 68 is driven to lower the frame holding member 56 to the expanded position shown in fig. 9 (B). Thus, the ring frame F fixed to the mounting surface 56a of the frame holding member 56 is lowered, and the dicing tape T attached to the ring frame F abuts against the upper end edge of the expanding drum 60 and expands mainly in the radial direction.
As a result, a tensile force is radially applied to the wafer 11 bonded to the dicing tape T, and when the tensile force is radially applied to the wafer 11 in this way, the 1 st direction-modified layer 17 formed along the 1 st line to divide 13a and the 2 nd direction-modified layer 19 formed along the 2 nd line to divide 13b become the dividing starting points, and the wafer 11 is broken along the 1 st line to divide 13a and the 2 nd line to divide 13b into device chips 21.
In the above-described embodiment, the semiconductor wafer 11 was described as the wafer to be processed by the processing method of the present invention, but the wafer to be processed by the present invention is not limited thereto, and the processing method of the present invention can be similarly applied to other wafers such as an optical device wafer having sapphire as a substrate.
Claims (1)
- A method of processing kinds of wafers, in which a wafer is divided into device chips, the wafer having devices formed in respective regions defined by a plurality of 1 st planned dividing lines formed in a 1 st direction and a plurality of 2 nd planned dividing lines formed in a 2 nd direction intersecting with the 1 st direction, and at least the 2 nd planned dividing line of the 1 st planned dividing line and the 2 nd planned dividing line being formed in a discontinuous manner, the method comprising the steps of:a 1 st direction modified layer forming step of condensing and irradiating a laser beam having a wavelength that is transparent to the wafer from a back surface side of the wafer along the 1 st planned dividing line into the wafer, and forming a 1 st direction modified layer in a plurality of layers along the 1 st planned dividing line in the wafer;a 2 nd direction modified layer forming step of irradiating the wafer with a laser beam having a wavelength which is transparent to the wafer by condensing the laser beam from the back surface side of the wafer along the 2 nd planned dividing line after the 1 st direction modified layer forming step is performed, and forming a plurality of 2 nd direction modified layers along the 2 nd planned dividing line in the wafer; anda dividing step of applying an external force to the wafer after the 1 st direction modified layer forming step and the 2 nd direction modified layer forming step are performed, and dividing the wafer into device chips by breaking the wafer along the 1 st planned dividing line and the 2 nd planned dividing line with the 1 st direction modified layer and the 2 nd direction modified layer as breaking starting points,it is characterized in that the preparation method is characterized in that,the 2 nd direction modified layer forming step includes a T-line processing step of: forming a 2 nd direction-modifying layer inside a 2 nd predetermined dividing line intersecting the 1 st predetermined dividing line in which the 1 st direction-modifying layer is formed in a T-shape,in the T-shaped via processing step, when the converging point of the laser beam converged into a conical shape is positioned in the vicinity of the front surface from the back surface of the wafer, the 1 st modified layer is formed so that the portion of the conical laser beam does not exceed the 1 st direction modified layer formed first, and when the 2 nd modified layer is formed so as to overlap with the 1 st modified layer, the 2 nd modified layer is also formed so that the portion of the laser beam converged into a conical shape does not exceed the 1 st direction modified layer formed first, and the end portion of the 2 nd direction modified layer formed sequentially in the same manner is formed in an inverse step shape toward the 1 st direction modified layer formed first from the lower layer to the upper layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015183403A JP6504977B2 (en) | 2015-09-16 | 2015-09-16 | Wafer processing method |
| JP2015-183403 | 2015-09-16 |
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| Publication Number | Publication Date |
|---|---|
| CN107053499A CN107053499A (en) | 2017-08-18 |
| CN107053499B true CN107053499B (en) | 2020-01-31 |
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| JP (1) | JP6504977B2 (en) |
| CN (1) | CN107053499B (en) |
| TW (1) | TWI701730B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI612621B (en) * | 2017-01-25 | 2018-01-21 | 矽品精密工業股份有限公司 | Electronic element and the manufacture thereof |
| JP6896344B2 (en) * | 2017-09-22 | 2021-06-30 | 株式会社ディスコ | Chip manufacturing method |
| JP7013092B2 (en) * | 2018-04-12 | 2022-01-31 | 株式会社ディスコ | How to make chips |
| JP7118804B2 (en) * | 2018-08-17 | 2022-08-16 | キオクシア株式会社 | Semiconductor device manufacturing method |
| TW202107553A (en) * | 2019-07-18 | 2021-02-16 | 日商東京威力科創股份有限公司 | Processing device and processing method |
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| JP6504977B2 (en) | 2019-04-24 |
| JP2017059684A (en) | 2017-03-23 |
| TW201721729A (en) | 2017-06-16 |
| TWI701730B (en) | 2020-08-11 |
| CN107053499A (en) | 2017-08-18 |
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