TWI701730B - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
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- TWI701730B TWI701730B TW105125169A TW105125169A TWI701730B TW I701730 B TWI701730 B TW I701730B TW 105125169 A TW105125169 A TW 105125169A TW 105125169 A TW105125169 A TW 105125169A TW I701730 B TWI701730 B TW I701730B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
提供一種當將至少一方的分割預定線被形成 為非連續的晶圓進行雷射加工時,抑制在一方分割預定線的端部在另一方分割預定線形成為T字路而抵碰的交點附近已形成的改質層被照射雷射束,可防止雷射束在改質層的反射或散射,且防止因漏光所造成的元件損傷之晶圓之加工方法。 Provide a method when at least one of the predetermined dividing lines is formed When laser processing is performed on a discontinuous wafer, it is possible to prevent the modified layer formed near the intersection point where the end of one planned dividing line is formed into a T-shaped path on the other side and colliding with the laser beam. A wafer processing method that prevents the reflection or scattering of the laser beam on the modified layer, and prevents component damage caused by light leakage.
將正交形成的第1分割預定線與第2分 割預定線之中至少第2分割預定線被形成為非連續的晶圓分割成各個元件晶片之晶圓之加工方法,其係包含:第1方向改質層形成步驟,其係沿著第1分割預定線,在晶圓的內部形成第1方向改質層;及第2方向改質層形成步驟,其係沿著第2分割預定線,在晶圓的內部形成第2方向改質層。第2方向改質層形成步驟係包含在形成有第1方向改質層的第1分割預定線形成為T字路而相交的第2分割預定線的內部形成第2方向改質層的T字路加工步驟。T字路加工步驟係複數層的第2方向改質層的端部由 下層遍及上層而朝向先形成的第1方向改質層形成為倒階梯狀。 Combine the first planned dividing line formed orthogonally with the second dividing line The method of processing a wafer in which at least the second planned dividing line is formed as a discontinuous wafer divided into individual element wafers among the planned cutting lines includes: a step of forming a first-direction reforming layer along the first The planned dividing line forms the first direction-modifying layer inside the wafer; and the second-direction reforming layer forming step is to form the second direction reforming layer inside the wafer along the second planned dividing line. The step of forming the second direction reforming layer includes forming a T-shaped path of the second direction reforming layer inside the second planned line of division where the first planned division line on which the first direction reforming layer is formed is formed as a T-shaped path and intersects Processing steps. The T-shaped path processing step is the end of the second direction modified layer of the plural layers. The lower layer spreads over the upper layer and is formed in an inverted step shape toward the first direction reforming layer formed earlier.
Description
本發明係關於矽晶圓、藍寶石晶圓等晶圓之加工方法。 The present invention relates to a processing method for silicon wafers, sapphire wafers and other wafers.
IC、LSI、LED等複數元件藉由分割預定線被區劃而形成在表面的矽晶圓、藍寶石晶圓等晶圓係藉由加工裝置被分割成各個元件晶片,經分割的元件晶片係被廣泛利用在行動電話、個人電腦等各種電子機器。 ICs, LSIs, LEDs, and other multiple components are divided by a predetermined dividing line, and the silicon wafers, sapphire wafers, and other wafers formed on the surface are divided into individual component chips by processing equipment. The divided component chips are widely used Used in various electronic devices such as mobile phones and personal computers.
在晶圓的分割係廣泛採用一種使用被稱為切割機的切削裝置的切割方法。在切割方法中,係一邊使將鑽石等研磨粒以金屬或樹脂固定而形成為厚度30μm左右的切削刀,以30000rpm左右的高速進行旋轉,一邊切入至晶圓,藉此切削晶圓,將晶圓分割成各個元件晶片。 A cutting method using a cutting device called a dicing machine is widely used in the wafer division system. In the dicing method, a cutting blade having a thickness of about 30 μm by fixing abrasive grains such as diamonds with metal or resin is rotated at a high speed of about 30,000 rpm while cutting into the wafer. The circle is divided into individual element wafers.
另一方面,近年來已開發一種使用雷射束,將晶圓分割成各個元件晶片的方法,且已實用化。以使用雷射束,將晶圓分割成各個元件晶片的方法而言,已知有以下說明的第1及第2加工方法。 On the other hand, in recent years, a method of dividing a wafer into individual element wafers using a laser beam has been developed and has been put into practical use. As a method of dividing a wafer into individual element wafers using a laser beam, the first and second processing methods described below are known.
第1加工方法係將對晶圓具透過性的波長 (例如1342nm)的雷射束的聚光點定位在與分割預定線相對應的晶圓的內部,沿著分割預定線照射雷射束,在晶圓內部形成改質層,之後藉由分割裝置,對晶圓賦予外力,將改質層作為分割起點而將晶圓分割成各個元件晶片的方法(參照例如日本專利第3408805號)。 The first processing method is to set the wavelength that is transparent to the wafer The focal point of the laser beam (for example, 1342nm) is positioned inside the wafer corresponding to the planned dividing line, and the laser beam is irradiated along the planned dividing line to form a modified layer inside the wafer, and then the dividing device is used , A method in which external force is applied to the wafer, and the modified layer is used as the starting point for dividing the wafer into individual element wafers (see, for example, Japanese Patent No. 3408805).
第2加工方法係將對晶圓具吸收性的波長(例如355nm)的雷射束照射在與分割預定線相對應的區域,藉由燒蝕加工形成加工溝,之後賦予外力,將加工溝作為分割起點而將晶圓分割成各個元件晶片的方法(參照例如日本特開平10-305420號)。 The second processing method is to irradiate a laser beam with a wavelength (for example, 355nm) that is absorptive to the wafer on the area corresponding to the planned dividing line, form processing grooves by ablation, and then apply external force to make the processing grooves A method of dividing the wafer into individual element wafers by dividing the starting point (see, for example, Japanese Patent Application Laid-Open No. 10-305420).
在上述第1加工方法中,具有既未發生加工屑,且與以往藉由一般使用之切削刀所為之切割相比較,切割線極小化或無水加工等優點,被盛行使用。 In the above-mentioned first machining method, no machining chips are generated, and compared with conventional cutting by a generally used cutter, the cutting line is minimized or waterless machining is advantageous, and it is popularly used.
此外,在藉由雷射束之照射所為之切割方法中,具有可將投射晶圓所代用的分割預定線(切割道(street))呈非連續的構成的晶圓進行加工的優點(參照例如日本特開2010-123723號)。在分割預定線呈非連續的晶圓的加工中,係按照分割預定線的設定,將雷射束的輸出進行ON/OFF來加工。 In addition, in the dicing method by laser beam irradiation, there is an advantage that the predetermined dividing line (street) used for the projection wafer can be processed in a non-continuous configuration (see for example Japan Special Publication No. 2010-123723). In the processing of wafers in which the planned dividing line is discontinuous, the laser beam output is turned on/off according to the setting of the planned dividing line.
〔專利文獻1〕日本專利第3408805號公報 [Patent Document 1] Japanese Patent No. 3408805
〔專利文獻2〕日本特開平10-305420號公報 [Patent Document 2] Japanese Patent Application Laid-Open No. 10-305420
〔專利文獻3〕日本特開2010-123723號公報 [Patent Document 3] JP 2010-123723 A
但是,在以第1方向連續伸長的分割預定線,以第2方向伸長的分割預定線形成為T字路而抵碰的交點附近,係有如下所示之問題。 However, in the vicinity of the intersection point where the planned dividing line extending continuously in the first direction and the planned dividing line extending in the second direction form a T-shaped path and collide, there are the following problems.
(1)若在與元件的一邊呈平行的第1分割預定線的內部先形成有第1改質層的第1分割預定線形成T字路而相交的第2分割預定線的內部形成第2改質層,隨著雷射束的聚光點接近T字路的交點,在已形成的第1改質層被照射將第2分割預定線進行加工的雷射束的一部分,發生雷射束的反射或散射,在元件區域漏光,有因該漏光而對元件造成損傷而使元件品質降低的問題。 (1) If the first planned division line of the first modified layer is formed inside the first planned division line that is parallel to one side of the element, the first planned division line forms a T-shaped path, and the second planned division line that intersects is formed inside the second planned division line. In the modified layer, as the condensing point of the laser beam approaches the intersection of the T-shaped path, the formed first modified layer is irradiated with a part of the laser beam that processes the second planned dividing line to generate a laser beam The reflection or scattering of light leaks in the device area, and there is a problem of damage to the device due to the leakage of light, which reduces the quality of the device.
(2)相反地,在與元件的一邊呈平行的第1分割預定線形成改質層之前,若沿著在第1分割預定線形成T字路而抵碰的第2分割預定線,在晶圓的內部先形成改質層,因遮斷由形成在T字路的交點近傍的改質層所發生的裂痕的進展的改質層不存在於T字路的交點,由T字路的交點,裂痕伸長1~2mm左右而達至元件,有使元件品質降低的問題。 (2) Conversely, before forming the modified layer on the first planned division line parallel to one side of the element, if the second planned division line that forms a T-shaped path on the first planned division line and abuts against it, the crystal The modified layer is formed inside the circle first, because the modified layer that blocks the progress of the cracks formed in the modified layer near the intersection of the T-shaped road does not exist at the intersection of the T-shaped road, and the intersection of the T-shaped road , The crack stretches about 1~2mm to reach the component, which has the problem of reducing the quality of the component.
本發明係鑑於如上所示之情形而完成者,其目的在提供一種當將至少一方的分割預定線被形成為非連續的晶圓進行雷射加工時,抑制在一方分割預定線的端部 在另一方分割預定線形成為T字路而抵碰的交點附近已形成的改質層被照射雷射束,可防止雷射束在改質層的反射或散射,且防止因漏光所造成的元件損傷之晶圓之加工方法。 The present invention was made in view of the situation as shown above, and its object is to provide a method for preventing at least one planned dividing line from being at the end of one planned dividing line when laser processing is performed on a non-continuous wafer. The modified layer formed near the intersection point where the predetermined dividing line is formed as a T-shaped path on the other side is irradiated with the laser beam, which can prevent the reflection or scattering of the laser beam on the modified layer, and prevent the element caused by light leakage The processing method of damaged wafers.
藉由本發明,提供一種晶圓之加工方法,其係在利用以第1方向形成的複數第1分割預定線、及以與該第1方向呈交叉的第2方向形成的複數第2分割預定線被區劃的各區域形成元件,將該第1分割預定線與該第2分割預定線之中至少該第2分割預定線被形成為非連續的晶圓分割成各個元件晶片之晶圓之加工方法,其特徵為:具備有:第1方向改質層形成步驟,其係沿著該第1分割預定線,將對晶圓具透過性的波長的雷射束由晶圓的背面側聚光至晶圓的內部進行照射,在晶圓的內部形成沿著該第1分割預定線的複數層的第1方向改質層;第2方向改質層形成步驟,其係在實施該第1方向改質層形成步驟之後,沿著該第2分割預定線,將對晶圓具透過性的波長的雷射束由晶圓的背面側聚光至晶圓的內部進行照射,在晶圓的內部形成沿著該第2分割預定線的複數層的第2方向改質層;及分割步驟,其係在實施該第1方向改質層形成步驟及該第2方向改質層形成步驟之後,對晶圓賦予外力,將該第1方向改質層及該第2方向改質層作為破斷起點而將晶圓沿著該第1分割預定線及該第2分割預定線進 行破斷而分割成各個元件晶片,該第2方向改質層形成步驟係包含在形成有該第1方向改質層的該第1分割預定線形成為T字路而相交的該第2分割預定線的內部形成第2方向改質層的T字路加工步驟,該T字路加工步驟係當將由晶圓的背面以圓錐形狀聚光在表面近傍的雷射束的聚光點進行定位時,以該圓錐形狀的雷射束的一部分不會超出先形成的該第1方向改質層的方式形成第1改質層,在重疊在該第1改質層形成第2改質層時亦以該圓錐形狀聚光的雷射束的一部分不會超出先形成的該第1方向改質層的方式形成第2改質層,同樣地依序形成的第2方向改質層的端部由下層遍及上層而朝向先形成的第1方向改質層形成為倒階梯狀。 According to the present invention, a method for processing a wafer is provided, which uses a plurality of first planned dividing lines formed in a first direction and a plurality of second planned dividing lines formed in a second direction intersecting the first direction A method of processing a wafer in which at least the second planned division line is formed into a discontinuous wafer divided into individual element wafers among the first planned division line and the second planned division line to form an element , Characterized in that it includes: a step of forming a first directionally modified layer for condensing a laser beam of a wavelength that is transparent to the wafer from the back side of the wafer along the first planned dividing line The inside of the wafer is irradiated, and a plurality of layers of first-direction reforming layers along the first planned dividing line are formed inside the wafer; the second-direction reforming layer forming step is performed after the first direction reforming After the quality layer formation step, along the second planned dividing line, the laser beam with a wavelength that is transparent to the wafer is condensed from the back side of the wafer to the inside of the wafer and irradiated to form the inside of the wafer. The second direction-modified layer of the plurality of layers along the second planned dividing line; and the dividing step, which is performed after the first direction-modified layer forming step and the second direction-modified layer forming step, the crystal The circle imparts an external force, the first direction modified layer and the second direction modified layer are used as the starting point of fracture, and the wafer is moved along the first planned dividing line and the second planned dividing line. The second direction-modified layer forming step includes the second planned division line formed as a T-shaped path and intersected by the first planned division line on which the first-direction reformed layer is formed. The inside of the wire forms a T-shaped path processing step of the second-direction modified layer. This T-shaped path processing step is when positioning the condensing point of the laser beam from the back of the wafer in a conical shape near the surface. The first modified layer is formed so that a part of the cone-shaped laser beam does not exceed the first modified layer formed in the first direction, and when the second modified layer is formed by overlapping the first modified layer The second modified layer is formed in such a way that part of the conical shaped laser beam does not exceed the first-direction modified layer formed earlier. Similarly, the end of the second-direction modified layer formed sequentially is formed from the lower layer The reforming layer is formed in an inverted step shape across the upper layer toward the first direction formed first.
藉由本發明之晶圓之加工方法,依序形成的第2方向改質層的端部由下層遍及上層朝向先形成的第1方向改質層形成為倒階梯形狀,因此在形成第2方向改質層時,不會有圓錐形狀的雷射束與第1方向改質層衝突的情形,因此不會發生因雷射束的散射或反射所造成的漏光,可解決漏光攻擊元件而對元件造成損傷的問題。因此,不會有使元件品質降低的情形,可沿著分割預定線,在晶圓的內部形成適當的改質層。 According to the wafer processing method of the present invention, the ends of the second-direction modifying layer formed sequentially from the lower layer to the upper layer are formed into an inverted stepped shape toward the first-direction modifying layer formed first. In the quality layer, there will be no conflict between the conical laser beam and the first direction modified layer, so there will be no light leakage caused by the scattering or reflection of the laser beam, which can solve the problem of light leakage attacking the component and causing the component The problem of damage. Therefore, the quality of the device will not be degraded, and an appropriate modified layer can be formed inside the wafer along the planned dividing line.
2:雷射加工裝置 2: Laser processing device
4:靜止基台 4: Stationary abutment
6:導軌 6: Rail
8:Y軸移動區塊 8: Y axis moving block
10:滾珠螺桿 10: Ball screw
11:半導體晶圓 11: Semiconductor wafer
11a:表面 11a: surface
11b:背面 11b: back
12:脈衝馬達 12: Pulse motor
13a:第1分割預定線 13a: The first planned dividing line
13b:第2分割預定線 13b: 2nd planned dividing line
14:Y軸進給機構(Y軸進給手段) 14: Y-axis feed mechanism (Y-axis feed means)
15:元件 15: Components
16:導軌 16: rail
17:第1方向改質層 17: Modified layer in the first direction
18:X軸移動區塊 18: X axis moving block
19:第2方向改質層 19: 2nd direction modified layer
20:滾珠螺桿 20: Ball screw
21:元件晶片 21: Component chip
22:脈衝馬達 22: Pulse motor
24:吸盤台 24: Suction table
26:夾具 26: Fixture
28:X軸進給機構(X軸進給手段) 28: X-axis feed mechanism (X-axis feed means)
30:圓筒狀支持構件 30: Cylindrical support member
32:長柱 32: long column
34:雷射束照射單元 34: Laser beam irradiation unit
35:雷射束發生單元 35: Laser beam generating unit
36:外殼 36: Shell
38:聚光器(雷射頭) 38: Condenser (laser head)
40:攝像單元 40: camera unit
42:雷射振盪器 42: Laser oscillator
44:重複頻率設定手段 44: Repetition frequency setting means
46:脈衝寬度調整手段 46: Pulse width adjustment means
48:功率調整手段 48: Power adjustment means
50:分割裝置 50: Split device
52:框架保持手段 52: Frame Keeping Means
54:帶擴張手段 54: With expansion means
56:框架保持構件 56: Frame holding member
56a:載置面 56a: Mounting surface
58:夾具 58: Fixture
60:擴張鼓輪 60: expansion drum
62:蓋 62: cover
64:支持凸緣 64: Support flange
66:驅動手段 66: Drive
68:空氣汽缸 68: Air cylinder
70:活塞桿 70: Piston rod
F:環狀框架 F: ring frame
LB:雷射束 LB: Laser beam
T:切割帶 T: Cutting tape
X1:方向 X1: direction
圖1係適於實施本發明之晶圓之加工方法之雷射加工裝置的斜視圖。 Fig. 1 is a perspective view of a laser processing device suitable for implementing the wafer processing method of the present invention.
圖2係雷射束發生單元的區塊圖。 Figure 2 is a block diagram of the laser beam generating unit.
圖3係適於以本發明之晶圓之加工方法予以加工之半導體晶圓的斜視圖。 Fig. 3 is a perspective view of a semiconductor wafer suitable for processing by the wafer processing method of the present invention.
圖4係顯示第1方向改質層形成步驟的斜視圖。 Fig. 4 is a perspective view showing a step of forming a first direction reforming layer.
圖5係顯示第1方向改質層形成步驟的模式剖面圖。 Fig. 5 is a schematic cross-sectional view showing a step of forming a first direction reforming layer.
圖6係顯示T字路加工步驟的模式平面圖。 Figure 6 is a schematic plan view showing the processing steps of the T-shaped road.
圖7係顯示T字路加工步驟的剖面圖。 Figure 7 is a cross-sectional view showing the processing steps of the T-shaped path.
圖8係分割裝置的斜視圖。 Fig. 8 is a perspective view of the dividing device.
圖9係顯示分割步驟的剖面圖。 Fig. 9 is a sectional view showing the division step.
以下參照圖示,詳加說明本發明之實施形態。若參照圖1,顯示適於實施本發明之實施形態之晶圓之加工方法之雷射加工裝置2的斜視圖。雷射加工裝置2係包含有被裝載在靜止基台4上之朝Y軸方向伸長的一對導軌6。
The embodiments of the present invention will be described in detail below with reference to the drawings. Referring to FIG. 1, a perspective view of a
Y軸移動區塊8係藉由由滾珠螺桿10及脈衝馬達12所構成的Y軸進給機構(Y軸進給手段)14,以分度進給方向,亦即Y軸方向移動。在Y軸移動區塊8上係固定有朝X軸方向伸長的一對導軌16。
The Y-
X軸移動區塊18係藉由由滾珠螺桿20及脈衝
馬達22所構成的X軸進給機構(X軸進給手段)28,被導引至導軌16而以加工進給方向,亦即X軸方向移動。
The
在X軸移動區塊18上係透過圓筒狀支持構件30裝載有吸盤台24。在吸盤台24係配設有夾著圖4所示之環狀框架F的複數(本實施形態中為4個)夾具26。
A suction table 24 is mounted on the
在靜止基台4的後方係立設有長柱32。在長柱32係固定有雷射束照射單元34的外殼36。雷射束照射單元34係包含有:被收容在外殼36中的雷射束發生單元35、及被安裝在外殼36的前端的聚光器(雷射頭)38。聚光器38係可朝上下方向(Z軸方向)微動地被安裝在外殼36。
A
雷射束發生單元35係如圖2所示,包含有:將波長1342nm的脈衝雷射進行振盪的YAG雷射振盪器或YVO4雷射振盪器等雷射振盪器42、重複頻率設定手段44、脈衝寬度調整手段46、及調整由雷射振盪器42被振盪的脈衝雷射束的功率的功率調整手段48。
The laser
在雷射束照射單元34的外殼36的前端係裝設有攝像單元40,該攝像單元40具備有:對被保持在吸盤台24的半導體晶圓11進行攝像的顯微鏡、及攝影機。聚光器38及攝像單元40係朝X軸方向整列來作配設。
An
若參照圖3,顯示出適於藉由本發明之晶圓之加工方法予以加工的半導體晶圓(以下有僅簡稱為晶圓的情形)11的表面側斜視圖。在半導體晶圓11的表面11a係形成有:以第1方向形成為連續的複數第1分割預定線
13a;及以與第1分割預定線13a呈正交的方向形成為非連續的複數第2分割預定線13b,在以第1分割預定線13a與第2分割預定線13b予以區劃的區域形成有LSI等元件15。
Referring to FIG. 3, a surface side perspective view of a semiconductor wafer (hereinafter referred to simply as a wafer) 11 suitable for processing by the wafer processing method of the present invention is shown. The
實施本發明實施形態之晶圓之加工方法時,半導體晶圓11係形成為其表面被貼著在外周部被貼著在環狀框架F的黏著帶亦即切割帶T的框架單元的形態,在該框架單元的形態下,半導體晶圓11係被載置在吸盤台24上,透過切割帶T被吸引保持,且環狀框架F係藉由夾具26被夾持而固定。
When the wafer processing method of the embodiment of the present invention is implemented, the
雖未特別圖示,在本發明之晶圓之加工方法中,首先將被吸引保持在吸盤台24的半導體晶圓11定位在雷射加工裝置2的攝像單元40的正下方,藉由攝像單元40對半導體晶圓11進行攝像,實施使第1分割預定線13a與聚光器38以X軸方向整列的對準。
Although not shown in particular, in the wafer processing method of the present invention, the
接著,關於將吸盤台24旋轉90°之後,以與第1分割預定線13a呈正交的方向進行伸長的第2分割預定線13b,亦實施同樣的對準,將對準的資料儲存在雷射加工裝置2的控制器的RAM。
Next, the second
雷射加工裝置2的攝像單元40通常具備有紅外線攝影機,因此藉由該紅外線攝影機,可由半導體晶圓11的背面11b側透過半導體晶圓11來檢測形成在表面11a的第1及第2分割預定線13a、13b。
The
實施對準後,實施沿著第1分割預定線13a,
在半導體晶圓11的內部形成第1方向改質層17的第1方向改質層形成步驟。在該第1方向改質層形成步驟中,如圖4及圖5所示,將對晶圓具透過性的波長(例如1342nm)的雷射束的聚光點,藉由聚光器38定位在半導體晶圓11的內部,由半導體晶圓11的背面11b側照射至第1分割預定線13a,將吸盤台24以圖5以箭號X1方向進行加工進給,藉此在半導體晶圓11的內部形成沿著第1分割預定線13a的第1方向改質層17。
After the alignment is performed, it is performed along the first
較佳為將聚光器38朝上方階梯性移動,在半導體晶圓11的內部形成沿著第1分割預定線13a的複數層的第1方向改質層17,例如5層的第1方向改質層17。
Preferably, the
第1方向改質層17係指形成為密度、折射率、機械強度或其他物理特性與周圍不同的狀態的區域,形成為熔融再固化層。該第1方向改質層形成步驟中的加工條件係設定為例如以下所示。
The first direction-modified
光源:LD激發Q開關Nd:YVO4脈衝雷射 Light source: LD excited Q switch Nd: YVO4 pulse laser
波長:1342nm Wavelength: 1342nm
重複頻率:50kHz Repetition frequency: 50kHz
平均輸出:0.5W Average output: 0.5W
聚光點徑:φ3μm Spot diameter: φ3μm
加工進給速度:200mm/s Processing feed speed: 200mm/s
在實施第1方向改質層形成步驟之後,實施
第2方向改質層形成步驟,其係延在方向(伸長方向)的端部沿著在第1分割預定線13a成為T字路而抵碰的第2分割預定線13b,將對半導體晶圓11具透過性的波長(例如1342nm)的雷射束聚光在半導體晶圓11的內部進行照射,在半導體晶圓11的內部形成沿著第2分割預定線13b的第2方向改質層19。
After performing the first direction reforming layer forming step, perform
The second direction-modified layer forming step is to extend the end portion in the direction (elongation direction) along the second
在該第2方向改質層形成步驟中,在將吸盤台24旋轉90°之後,在半導體晶圓11的內部形成沿著第2分割預定線13b的複數層的第2方向改質層19。
In this second direction reforming layer forming step, after rotating the chuck table 24 by 90°, a plurality of second
第2方向改質層形成步驟係包含有T字路加工步驟,其係在形成有第1方向改質層17的第1分割預定線13a形成為T字路而相交的第2分割預定線13b的內部形成第2方向改質層19。
The second direction-modified layer forming step includes a T-shaped road processing step, which is formed as a T-shaped road on the first
參照圖7,說明該T字路加工步驟。首先,如圖7(A)所示,在T字路加工步驟中,將由半導體晶圓11的背面11b以圓錐形狀聚光在表面11a近傍的雷射束LB的聚光點進行定位時,以圓錐形狀的雷射束LB的一部分不會超出先形成的第1方向改質層17的方式形成以第2方向伸長的第1的第2方向改質層19。亦即,在圖7(A)所示之位置停止雷射束LB的照射。圖6係顯示圖7(A)的概略平面圖。
Referring to Fig. 7, the T-shaped path processing steps will be described. First, as shown in FIG. 7(A), in the T-shaped path processing step, the condensing point of the laser beam LB, which is condensed from the
接著,重疊在第1的第2方向改質層19形成第2的第2方向改質層19時,亦如圖7(B)所示,以圓錐形狀聚光的雷射束LB的一部分不會超出先形成的第1
方向改質層17的方式形成第2的第2方向改質層19。
Next, when the second second
同樣地,依序形成第3的第2方向改質層19、第4的第2方向改質層19、及第5的第2方向改質層19,以第2方向改質層19的端部由下層遍及上層而朝向先形成的第1方向改質層17成為倒階梯狀的方式形成第2方向改質層19。
In the same way, a third, second-directional modified
在此,被內置在聚光器38的聚光透鏡的開口數一般被設定為較大的值,因此雷射束LB係如圖7(A)、圖7(B)所示被聚光成圓錐形狀。
Here, the number of apertures of the condenser lens built into the
在實施第1方向改質層形成步驟及第2方向改質層形成步驟之後,實施分割步驟,其係對半導體晶圓11賦予外力,且以第1方向改質層17及第2方向改質層19為破斷起點,將半導體晶圓11沿著第1分割預定線13a及第2分割預定線13b進行破斷,且分割成各個元件晶片。
After performing the first direction-modified layer forming step and the second direction-modified layer forming step, a dividing step is performed, which applies external force to the
該分割步驟係使用例如圖8所示之分割裝置(伸展裝置)50來實施。圖8所示之分割裝置50係具備有:保持環狀框架F的框架保持手段52;及將被裝設在保持於框架保持手段52的環狀框架F的切割帶T進行擴張的帶擴張手段54。
This dividing step is performed using the dividing device (stretching device) 50 shown in FIG. 8, for example. The dividing
框架保持手段52係由環狀的框架保持構件56、及被配設在框架保持構件56的外周之作為固定手段的複數夾具58所構成。框架保持構件56的上面係形成有載置環狀框架F的載置面56a,環狀框架F被載置在該載
置面56a上。
The frame holding means 52 is composed of a ring-shaped
接著,被載置在載置面56a上的環狀框架F係藉由夾具58被固定在框架保持手段52。如上所示所構成的框架保持手段52係藉由帶擴張手段54,可朝上下方向移動地予以支持。
Next, the ring-shaped frame F placed on the placing
帶擴張手段54係具備有被配設在環狀框架保持構件56的內側的擴張鼓輪60。擴張鼓輪60的上端係以蓋62予以閉鎖。該擴張鼓輪60係具有小於環狀框架F的內徑且大於被貼著在裝設於環狀框架F的切割帶T的半導體晶圓11的外徑的內徑。
The belt expansion means 54 is provided with an
擴張鼓輪60係具有一體形成在其下端的支持凸緣64。帶擴張手段54係另外具備有:將環狀框架保持構件56以上下方向移動的驅動手段66。該驅動手段66係由被配設在支持凸緣64上的複數空氣汽缸68所構成,其活塞桿70係與框架保持構件56的下面相連結。
The
由複數空氣汽缸68所構成的驅動手段66係將環狀的框架保持構件56,在其載置面56a成為與擴張鼓輪60的上端亦即蓋62的表面為大致相同高度的基準位置、與比擴張鼓輪60的上端為預定量下方的擴張位置之間,以上下方向移動。
The driving means 66 composed of a plurality of
參照圖9,說明使用構成如上的分割裝置50所實施的半導體晶圓11的分割步驟。如圖9(A)所示,將透過切割帶T支持有半導體晶圓11的環狀框架F載置於框架保持構件56的載置面56a上,藉由夾具58而固定
在框架保持構件56。此時,框架保持構件56係被定位在其載置面56a成為與擴張鼓輪60的上端為大致相同高度的基準位置。
9, a description will be given of the dividing step of the
接著,驅動空氣汽缸68而將框架保持構件56下降至圖9(B)所示之擴張位置。藉此,由於將被固定在框架保持構件56的載置面56a上的環狀框架F下降,因此被裝設在環狀框架F的切割帶T係抵接於擴張鼓輪60的上端緣而主要以半徑方向被擴張。
Next, the
結果,對被貼著在切割帶T的半導體晶圓11係以放射狀作用拉伸力。如上所示若在半導體晶圓11以放射狀作用拉伸力,沿著第1分割預定線13a所形成的第1方向改質層17及沿著第2分割預定線13b所形成的第2方向改質層19成為分割起點,半導體晶圓11沿著第1分割預定線13a及第2分割預定線13b被破斷,且被分割為各個元件晶片21。
As a result, a tensile force is applied radially to the
在上述實施形態中,說明半導體晶圓11作為成為本發明之加工方法之加工對象的晶圓,但是成為本發明之加工對象的晶圓並非為限定於此者,在將藍寶石作為基板的光元件晶圓等其他晶圓,本發明之加工方法亦可同樣地適用。
In the above embodiment, the
11‧‧‧半導體晶圓 11‧‧‧Semiconductor Wafer
11b‧‧‧背面 11b‧‧‧Back
17‧‧‧第1方向改質層 17‧‧‧The first direction modified layer
19‧‧‧第2方向改質層 19‧‧‧The second direction modified layer
LB‧‧‧雷射束 LB‧‧‧Laser beam
T‧‧‧切割帶 T‧‧‧cutting tape
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